CN116288263A - Gas processing furnace and film forming method for wafer - Google Patents

Gas processing furnace and film forming method for wafer Download PDF

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Publication number
CN116288263A
CN116288263A CN202111563936.1A CN202111563936A CN116288263A CN 116288263 A CN116288263 A CN 116288263A CN 202111563936 A CN202111563936 A CN 202111563936A CN 116288263 A CN116288263 A CN 116288263A
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gas
area
treatment furnace
vertical direction
gas treatment
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檀忠毅
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present disclosure provides a gas processing furnace and a film forming method for a wafer. The gas treatment furnace comprises a furnace body, a wafer boat, a first lateral spray head and a plurality of vertical spray heads. Wherein, the furnace body is provided with a cavity. The wafer boat is arranged in the cavity along the vertical direction and is provided with a first area and a second area from top to bottom. The first lateral spray heads face the wafer boat and correspond to the first area. The plurality of vertical spray heads face the top of the chamber and are distributed in the chamber at intervals along the vertical direction. The gas treatment furnace in the embodiment of the disclosure can enable the film formation of the wafer to be uniform, and improves the stability of the semiconductor device.

Description

Gas processing furnace and film forming method for wafer
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to a gas processing furnace and a film forming method for a wafer.
Background
In the process of manufacturing a semiconductor, a film is formed on a wafer surface, for example, a polycrystalline silicon germanium film is formed on the wafer surface, by using a diffusion furnace apparatus, so as to provide a substrate for the next process. In the conventional film forming process, a plurality of wafers are generally placed in a wafer boat in a furnace, and a reaction gas is supplied into the furnace equipment to form a desired film on the wafer surface.
However, in the related art, the thickness of the wafer and the thickness of the wafer are not uniform in the same reaction process, which causes a difference in the thickness dimension of the wafer, thereby affecting the subsequent processes, and also causes a difference in performance between the formed semiconductor devices, reducing the yield of the semiconductor devices.
The above information disclosed in the background section is only for enhancement of understanding of the background of the disclosure and thus it may include information that does not form a related art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
The embodiment of the disclosure provides a gas treatment furnace, which is used for forming a film on a wafer, so that the film on the wafer can be uniform, and the stability of a semiconductor device is improved.
The embodiment of the disclosure also provides a film forming method for wafers, which can uniformly form films of a plurality of wafers by using the gas treatment furnace and improve the yield of semiconductor devices.
According to one aspect of the present disclosure, a gas treatment furnace is provided that includes a furnace body, a wafer boat, a first side shower head, and a plurality of vertical shower heads. Wherein, the furnace body is provided with a cavity. The wafer boat is arranged in the cavity along the vertical direction, and the wafer boat is provided with a first area and a second area from top to bottom. The first lateral spray heads face the wafer boat and correspond to the first area. The vertical spray heads face the top of the chamber and are distributed in the chamber at intervals along the vertical direction.
According to an exemplary embodiment of the present disclosure, the first side shower head has a plurality of gas injection holes that are spaced apart in the vertical direction.
According to an exemplary embodiment of the present disclosure, the plurality of gas injection holes are distributed in the vertical direction corresponding to the first region.
According to an exemplary embodiment of the disclosure, the first side shower nozzles are plural and are distributed at intervals in the vertical direction, and the plural first side shower nozzles are circumferentially arranged on the outer side of the wafer boat.
According to an exemplary embodiment of the present disclosure, each of the first side shower nozzles has 2to 6 gas injection holes.
According to an exemplary embodiment of the present disclosure, the number of gas injection holes of each of the first side shower nozzles is the same, and the plurality of gas injection holes are uniformly distributed in the vertical direction.
According to an exemplary embodiment of the present disclosure, a ratio of a dimension of the second region in the vertical direction to a dimension of the first region in the vertical direction is 1: (2-8).
According to an exemplary embodiment of the present disclosure, the first region includes a plurality of first sub-regions, each of which has a dimension in the vertical direction equal to a dimension of the second region in the vertical direction; the first side spray heads are in one-to-one correspondence with the first subareas.
According to an exemplary embodiment of the present disclosure, the plurality of vertical shower nozzles are uniformly distributed in the vertical direction and are circumferentially disposed at an outer side of the wafer boat.
According to an exemplary embodiment of the present disclosure, the gas treatment furnace further includes a second lateral shower and a third lateral shower disposed below the second region and facing the inside of the chamber in a horizontal direction.
According to an exemplary embodiment of the present disclosure, the gas treatment furnace further comprises a pumping device in communication with the top of the chamber to pump gas out of the chamber.
According to an exemplary embodiment of the present disclosure, the gas treatment furnace further includes: the pressure sensors are arranged in the first area and the second area of the wafer boat and are used for sensing the air pressure of the first area and the second area; a flow regulator configured to regulate a flow rate of gas into the furnace body; and the controller is respectively and electrically connected with the pressure sensors and the flow regulator, and is configured to receive signals of the pressure sensors and control the flow regulator to regulate the gas flow.
According to another aspect of the present disclosure, there is provided a film forming method of a wafer, including: providing the gas treatment furnace according to any one of the embodiments, and placing a plurality of wafers in the first region and the second region of the wafer boat; heating the furnace body to a preset temperature; spraying a first reaction gas to the wafer by using a first side shower head; and jetting the second reaction gas along the vertical direction by utilizing a plurality of vertical nozzles, wherein the flow rate of the second reaction gas gradually decreases from top to bottom.
According to an exemplary embodiment of the present disclosure, the first reaction gas is BCl 3 And He, the BCl 3 The content of (2) is 6-10%.
According to an exemplary embodiment of the present disclosure, the second reaction gas is GeH 4 With SiH 4 Is a mixed gas of GeH 4 With SiH 4 The volume ratio of (2) to (5).
According to an exemplary embodiment of the present disclosure, the gas treatment furnace further includes: the second lateral spray head and the third lateral spray head are arranged below the second area of the wafer boat and face the inside of the gas treatment furnace along the horizontal direction; the method further comprises the steps of: injecting the first reaction gas into the gas treatment furnace by using the second lateral nozzle; and spraying the second reaction gas into the gas treatment furnace by using the third lateral spray head.
According to an exemplary embodiment of the present disclosure, the flow rate of the first reaction gas sprayed from each of the first and second lateral spray heads is 6 to 10sccm; the flow rate of the second reaction gas sprayed out of each vertical spray head and each third lateral spray head is 60-120 sccm, and the flow rate of the second reaction gas is sequentially reduced from top to bottom.
According to an exemplary embodiment of the present disclosure, the method further comprises: detecting air pressure of the first area and the second area of the wafer boat; and if the air pressure of the first area is different from the air pressure of the second area, regulating and controlling the flow of the first reaction gas and/or the second reaction gas so that the air pressure of the first area is the same as the air pressure of the second area.
According to an exemplary embodiment of the present disclosure, the method further comprises: and exhausting air from the top end of the furnace body to ensure that the air pressure of the wafer boat is 0.2-0.5 Torr.
According to an exemplary embodiment of the present disclosure, the preset temperature is 300 to 500 ℃.
According to the technical scheme, the novel intelligent control system has at least one of the following advantages and positive effects:
according to the gas treatment furnace, the first side nozzle corresponds to the first area of the wafer boat, so that the first reaction gas is sprayed to the wafer located in the first area, and the second reaction gas is sprayed through the plurality of vertical nozzles, so that the constant gas pressure in the chamber can be ensured, the wafer film can be uniformly formed, and the stability of the semiconductor device is improved.
Drawings
The above and other features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 is a schematic view of a structure of a gas treatment furnace according to an exemplary embodiment of the present disclosure;
FIG. 2 is a schematic perspective view of a gas treatment furnace according to an exemplary embodiment of the present disclosure;
FIG. 3 is another angular perspective schematic view of a gas treatment furnace according to an exemplary embodiment of the present disclosure;
FIG. 4 is another angular perspective schematic view of a gas treatment furnace according to an exemplary embodiment of the present disclosure;
FIG. 5 is a functional block diagram of a control architecture in a gas treatment furnace according to an exemplary embodiment of the present disclosure;
fig. 6 is a flow chart of a film forming method of a wafer according to an exemplary embodiment of the present disclosure;
fig. 7 is a graph of thickness test results for a plurality of wafers positioned in a wafer boat according to an exemplary embodiment of the present disclosure.
Reference numerals illustrate:
1. a furnace body; 2. a wafer boat; a1, a first area; a2, a second area; a. a first sub-region; 3. a first lateral spray head; 31. a gas injection hole; 4. a vertical shower nozzle; 5. a second lateral spray head; 6. a third lateral spray head; 7. an air extracting device; 8. a pressure sensor; 9. a flow regulator; 10. a controller; C. a chamber; x, horizontal direction; y vertical direction.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus detailed descriptions thereof will be omitted.
In the following description of various exemplary embodiments of the present disclosure, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration various exemplary structures in which aspects of the disclosure may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be used, and structural and functional modifications may be made without departing from the scope of the present disclosure. Moreover, although the terms "over," "between," "within," and the like may be used in this specification to describe various exemplary features and elements of the disclosure, these terms are used herein for convenience only, e.g., in accordance with the directions of examples in the drawings. Nothing in this specification should be construed as requiring a particular three-dimensional orientation of structures to fall within the scope of this disclosure. Furthermore, the terms "first," "second," and the like in the claims are used merely as labels, and are not intended to limit the numerals of their objects.
The flow diagrams depicted in the figures are exemplary only, and do not necessarily include all of the elements and operations/steps, nor must they be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the order of actual execution may be changed according to actual situations.
In addition, in the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless specifically defined otherwise. "above" and "below" are terms of art that indicate orientation, and are merely for clarity of description and are not limiting.
According to an aspect of the present disclosure, a gas treatment furnace is provided. As shown in fig. 1 to 5, wherein fig. 1 is a schematic view of the structure of a gas treatment furnace according to an embodiment of the present disclosure, which generally shows the structural arrangement of a furnace body 1 and the flow direction of gas in the furnace body 1; fig. 2 is a schematic perspective view of a gas treatment furnace according to an embodiment of the present disclosure, mainly illustrating a distribution of first lateral nozzles 3; FIG. 3 is a schematic view of another perspective view of a gas treatment furnace according to an embodiment of the present disclosure, mainly illustrating the distribution of vertical shower heads 4; fig. 4 shows a schematic perspective view of another embodiment of the gas treatment furnace, mainly illustrating another distribution of the first lateral showerhead and the vertical showerhead. Fig. 5 shows a functional block diagram of a control structure inside the gas treatment furnace. As shown in fig. 1, a gas treatment furnace of an embodiment of the present disclosure includes: furnace body 1, wafer boat 2, first side shower nozzle 3 and a plurality of vertical shower nozzles 4. Wherein the furnace body 1 has a chamber C. The wafer boat 2 is disposed in the chamber C along the vertical direction Y, and the wafer boat 2 has a first area A1 and a second area A2 from top to bottom. The first lateral shower head 3 faces the boat 2 and corresponds to the first area A1. The plurality of vertical shower heads 4 are directed toward the top of the chamber C and are spaced apart in the vertical direction Y in the chamber C.
According to the gas treatment furnace disclosed by the embodiment of the disclosure, the first side nozzle 3 corresponds to the first area A1 of the wafer boat 2 so as to spray the first reaction gas to the wafer positioned in the first area A1, and the plurality of vertical nozzles spray the second reaction gas, so that the constant gas pressure in the chamber C can be ensured, the film formation of the wafer is uniform, and the stability of the semiconductor device is improved.
The gas treatment furnace of the embodiments of the present disclosure will be described in detail below.
It should be noted that, the "vertical direction Y" in the embodiment of the disclosure refers to the height direction of the furnace body 1, and may also be understood as the extending direction of the wafer boat 2, that is, the direction in which a plurality of wafers are sequentially placed in the wafer boat 2. Thus, the "horizontal direction X" in the embodiments of the present disclosure is a direction perpendicular to the vertical direction Y. In the embodiment of the disclosure, the top end of the furnace body 1 is from top to bottom, as shown in fig. 1, the second area A2 of the wafer boat 2 is located below the first area A1. In addition, the "inner" and "outer" mentioned in the embodiments of the present disclosure are with respect to the central axis of the furnace body 1, which is an imaginary line extending in the vertical direction Y and passing through the center of the furnace body 1, and the closer to the central axis, the more inward, and the farther from the central axis, the more outward. As shown in fig. 1, the boat 2 is located in the furnace body 1, and the first lateral shower head 3 is located outside the boat 2. Of course, the above technical terms are used for expressing the orientation, and are intended to more clearly illustrate the relative positional relationship of the different components, and are not intended to be limiting.
As shown in fig. 1 and 2, the first side shower head 3 has a plurality of gas injection holes 31, and the plurality of gas injection holes 31 are spaced apart in the vertical direction Y. The first lateral nozzle 3 can be connected with an air inlet at the bottom of the furnace body 1 through a pipeline so as to be communicated with an external air source. In some embodiments, the first side nozzle 3 may be a part of a pipeline, and the gas injection holes 31 are opened on the pipeline. Further, a nozzle may be installed at the gas ejection hole 31, so long as the gas can be ejected toward the wafer boat 2, and the present invention is not limited thereto.
In some embodiments, as shown in FIG. 1, the plurality of gas injection holes 31 are distributed in the vertical direction Y corresponding to the first area A1. That is, the first side shower head 3 may extend in the vertical direction Y corresponding to the first area A1 of the wafer boat 2, such that the gas injection holes 31 located at the top end of the first side shower head 3 correspond to the top end of the first area A1 of the wafer boat 2, the gas injection holes 31 located at the bottom end of the first side shower head 3 correspond to the bottom end of the first area A1 of the wafer boat 2, and the plurality of gas injection holes 31 are arranged at intervals from top to bottom, so that the plurality of gas injection holes 31 can completely correspond to the first area A1 of the wafer boat 2 in the vertical direction Y. When the wafers positioned on the wafer boat 2 are coated, the gas sprayed from the plurality of gas spraying holes 31 can completely cover the first area A1, so that the gas can be completely deposited on the wafers after reaction, and the uniform coating of the wafers is realized.
In some embodiments, as shown in fig. 1 to 2, the first side shower heads 3 have a plurality of first side shower heads 3, which are spaced apart in the vertical direction Y, and the plurality of first side shower heads 3 are circumferentially disposed outside the wafer boat 2. In some embodiments, the number of the first lateral spray heads 3 may be 1 to 10, for example, 2, 3, 4, 5, 6, 7 or 8, which is not particularly limited herein. So configured, the plurality of gas injection holes 31 can be distributed not only at intervals in the vertical direction Y but also around the wafer boat 2, i.e., the plurality of first side shower heads are not aligned in the vertical direction, so that the reaction gas can be supplied in multiple directions. In addition, the flow and the pressure of each first lateral spray head can be independently regulated and controlled, so that the flow of the reaction gas and the air pressure in the chamber C can be more accurately controlled, and the film formation of the wafer is more uniform.
In some embodiments, as shown in FIG. 1, each first side shower head 3 has 2-6 gas injection holes 31. Specifically, the number of the gas ejection holes 31 may be 3, 4 or 5, and may be selected according to the size of the wafer boat 2, which is not particularly limited herein.
In some embodiments, as shown in fig. 1 and 2, the number of gas injection holes 31 of each first side shower head 3 is the same, and the plurality of gas injection holes 31 are uniformly distributed in the vertical direction Y, i.e., the plurality of gas injection holes 31 are equally spaced in the vertical direction, and the centers of the plurality of gas injection holes are aligned in the vertical direction. In this way, the gas ejected from the plurality of gas ejection holes 31 is more uniform, which is advantageous for uniformity of film formation.
In some embodiments, as shown in fig. 1, a ratio of a dimension of the second region A2 of the boat 2 in the vertical direction Y to a dimension of the first region A1 in the vertical direction Y is 1: (2-8). The ratio may be 1:3,1:4,1:5,1:6 or 1:7, without particular limitation. In practice, the boat 2 may be an integral body, and may be divided into a first area A1 and a second area A2 according to the ratio requirement, so as to arrange the positions of the first lateral shower heads 3. There may be a plurality of boats 2, as shown in fig. 1, there may be five boats 2 arranged in the vertical direction Y, the lowest boat 2 may be regarded as the second area A2, and the four boats 2 from top to bottom may be regarded as the first area A1. The position of the wafer boat can be flexibly adjusted by arranging a plurality of wafer boats.
In some embodiments, as shown in fig. 1, the first area A1 may include a plurality of first sub-areas a, each of which has a size in the vertical direction Y equal to a size in the vertical direction Y of the second area A2. Wherein, a plurality of first side shower nozzles 3 are corresponding to a plurality of first subareas a one by one. Therefore, not only is the regulation and control of the gas simpler and more convenient, the film formation is more uniform, but also the structure of the gas treatment furnace is simpler, and the manufacturing is convenient.
As shown in fig. 1, in an embodiment, the number of the first side-direction nozzles 3 is 4, each first side-direction nozzle 3 may have 5 gas nozzles 31, where the gas nozzles 31 are uniformly distributed in the vertical direction Y, and the ratio of the size of the second area A2 of the wafer boat 2 in the vertical direction Y to the size of the first area A1 in the vertical direction Y is 1:4, as shown in fig. 7, and the test result shows that the uniformity of film formation of the wafer in this embodiment is significantly improved compared with the related art.
In some embodiments, as shown in fig. 1 and 3, the plurality of vertical shower heads 4 are uniformly distributed in the vertical direction Y and circumferentially provided on the outside of the wafer boat 2, i.e., the centers of the plurality of vertical shower heads 4 are not aligned in the vertical direction. The vertical nozzle 4 may be connected to another air inlet at the bottom of the furnace body 1 through a pipe to communicate with an external air source. Of course, the vertical nozzle 4 may also be part of this line. The top end of the vertical showerhead 4 opens toward the top of the chamber C for injecting a different reaction gas from the first side showerhead 3. Further, a nozzle may be attached to the distal end opening, and the gas may be ejected upward, without being limited thereto.
In some embodiments, the number of the plurality of vertical spray heads 4 may be 1 to 10, for example, 2, 3, 4, 5, 6, 7 or 8, which are not particularly limited herein. The number of vertical showerheads 4 may be selected according to the amount of flow of the gas required, and the number of vertical showerheads 4 may be the same as the number of first lateral showerheads 3. In addition, the top ends of the plurality of vertical nozzles 4 have the same height difference in the vertical direction Y, that is, the gas outlets of the plurality of vertical nozzles 4 have the same pitch in the vertical direction Y, which is advantageous for uniform distribution of the gas in the whole chamber C. In some embodiments, as shown in fig. 3, the vertical nozzle 4 is part of an in-line plenum that is located at the top of the plenum. The plurality of air supply pipes sequentially have the same height difference, so that the top openings of the vertical spray heads 4 are distributed at equal intervals in the vertical direction.
In the embodiments of the present disclosure, the first reactive gas ejected from the first lateral showerhead 3 can react with the second reactive gas ejected from the vertical showerhead 4to form a film forming material attached to the surface of the wafer. Because the first reaction gas and the second reaction gas can be diffused and mixed in the chamber C after being sprayed out, and the reaction gas tends to diffuse to the lower part of the chamber C, the reaction gas can diffuse downwards to the second area A2 of the wafer boat 2, so in some embodiments of the present application, the flow of the second reaction gas sprayed by the vertical nozzle 4 can be sequentially reduced from top to bottom, so that the gas diffusion inside the chamber C is more uniform, the gas pressure in each area of the wafer boat 2 is kept the same, and the gas is deposited to the surface of the wafer after being reacted, so that the film forming thickness of the wafer in different areas is more uniform.
In other embodiments, the vertical showerhead 4 may also have lateral openings to enable the vertical showerhead to also eject the second reactant gas toward the wafer boat.
In some embodiments, as shown in fig. 1 and 2, the first lateral shower head 3 and the vertical shower head 4 may be disposed opposite to each other, and all are disposed around the outside of the wafer boat 2. In other embodiments, the first lateral spray heads 3 and the vertical spray heads 4 may be disposed adjacently, or the first lateral spray heads 3 and the vertical spray heads 4 may be disposed at intervals, which is not limited herein.
In some embodiments, as shown in fig. 1, the gas processing furnace further includes a second lateral shower 5 and a third lateral shower 6, both disposed below the second area A2 of the wafer boat 2 and facing the inside of the chamber C in the horizontal direction X. The second lateral nozzle 5 is the same as the reaction gas sprayed from the first lateral nozzle 3, and the third lateral nozzle 6 is the same as the reaction gas sprayed from the vertical nozzle 4. When the reaction gas sprayed from the first lateral spray head 3 and the vertical spray head 4 is insufficient to diffuse to the bottom of the second area A2, or the diffusion speed is slow, the second lateral spray head 5 and the third lateral spray head 6 can be opened to supplement the corresponding reaction gas, so that the reaction gas in the chamber C can be uniformly distributed, and the air pressure in the chamber C can be ensured to be constant.
In some embodiments, the second lateral showerhead 5 may be located on the same side of the boat 2 as the first lateral showerhead 3, or the second lateral showerhead may be spaced apart from the first lateral showerhead 3 in a direction surrounding the boat 2. In some embodiments, the number of the second lateral spraying heads 5 may be 1 or more, such as 2 or 3, and since the second lateral spraying heads 5 are located below the second area A2 and the reaction gas tends to flow downward, the flow rate of the reaction gas sprayed by the second lateral spraying heads 5 is as small as possible compared with the flow rate of the reaction gas sprayed by the first lateral spraying heads 3, so as to ensure that the gas pressure of each area in the strong chamber is the same.
In some embodiments, as shown in fig. 2 and 3, the gas treatment furnace further comprises a gas extraction device 7 in communication with the top of the chamber C to extract gas out of the chamber C. The evacuation device 7 can evacuate the remaining gas of the reaction out of the chamber C of the furnace body 1, and maintain the gas pressure in the chamber C constant. In addition, the air extractor 7 provides upward suction force for the air in the chamber, so that the air at the bottom of the chamber is promoted to be diffused upwards, and the air pressure in the whole chamber is kept constant. In some embodiments, the pressure in the chamber C (i.e., the pressure in each region of the wafer boat 2) is maintained at 0.2Torr to 0.5Torr, such as 0.2Torr, 0.3Torr, 0.4Torr or 0.5Torr, which are not particularly limited herein, and those skilled in the art can choose according to practical requirements.
In some embodiments, as shown in fig. 5, the gas treatment furnace may further include a plurality of pressure sensors 8, a flow regulator 9, and a controller 10. The pressure sensors 8 are disposed in the first area A1 and the second area A2 of the wafer boat 2, and are configured to sense the air pressures in the first area A1 and the second area A2. In some embodiments, the plurality of pressure sensors 8 may be arranged at regular intervals on the outside of the boat 2 in the vertical direction Y to sense the air pressure value at which the boat 2 is located on the whole. When the first area A1 of the wafer boat 2 has a plurality of first sub-areas a, one or more pressure sensors 8 may be provided at each of the first sub-areas a, and one or more pressure sensors 8 may be provided at the second area A2, which is not particularly limited herein, as long as the pressure sensors 8 can sense the air pressure value at the position of the wafer boat 2. Each pressure sensor 8 may convert the sensed air pressure value into an electrical signal for output to the controller 10.
The flow regulator 9 is configured to regulate the flow rate of the gas into the furnace body 1. In some embodiments, the flow regulator 9 may have a plurality of flow regulators, which are respectively disposed on each of the first lateral shower nozzle 3, the second lateral shower nozzle 5, the vertical shower nozzle 4 and the third lateral shower nozzle 6, and when the pressure sensor 8 senses that the air pressure value at a certain place changes, the controller 10 controls the flow regulator 9 disposed on the shower nozzle to change the flow of the air of the shower nozzle, so as to ensure that the air pressure of the wafer boat 2 is constant and ensure that the film forming of the wafer is uniform. The flow regulator 9 may be a flow valve, and the flow regulator 9 may be electrically connected to the controller 10, may receive an electrical signal from the controller 10, and may perform flow regulation according to the electrical signal. In an embodiment, when the pressure value below the second area A2 of the boat 2 is reduced, the controller 10 may control the flow regulator 9 at the second lateral showerhead 5to open or increase the flow, so that the air pressure therein is increased.
The controller 10 may be further electrically connected to the evacuation device 7 for controlling the value of the air pressure in the whole chamber C. During film formation, the pressure in the chamber C needs to be maintained at 0.2to 0.5Torr, and when the flow rate of each showerhead increases to raise the total pressure in the chamber C, the controller 10 may control the air extractor 7 to raise the air extraction amount, and otherwise, to lower the air extraction amount.
In summary, in the gas processing furnace according to the embodiment of the disclosure, the first side shower nozzle 3 is used to spray the first reaction gas to the wafer in the first area A1 corresponding to the first area A1 of the wafer boat 2, and the plurality of vertical shower nozzles are used to spray the second reaction gas, so that the gas pressure in the chamber C can be ensured to be constant, the wafer film can be uniformly formed, and the stability of the semiconductor device can be improved.
According to another aspect of the present disclosure, as shown in fig. 6, there is provided a film forming method of a wafer, including:
step S200: a gas processing furnace is provided and a plurality of wafers are placed in the first area A1 and the second area A2 of the wafer boat 2. Wherein, this gas treatment stove is the gas treatment stove of arbitrary embodiment above.
Step S400: the furnace body 1 is heated to a preset temperature.
Step S600: the first reactive gas is injected toward the wafer by the first side shower head 3.
Step S800: the second reaction gas is sprayed in the vertical direction Y by the plurality of vertical spray heads 4, and the flow rate of the second reaction gas gradually decreases from top to bottom.
The above steps are not shown in the order, and may be performed simultaneously as in step S600 and step S800, or may be performed after step S600, or may be performed after step S800, and the order may be selected according to the reaction principle of the two reaction gases, and is not particularly limited herein.
In some embodiments, the first reactant gas is BCl 3 Mixed gas with He, BCl 3 The content of (2) is 6-10%. Wherein BCl 3 He may act as a catalyst and He as an inert gas may act as a diluent, the two gases having been mixed in the pipeline before the first reactive gas is ejected to the showerhead 3. BCl (binary coded decimal) 3 The content of (2) is 6%, 7%, 8% or 9%, and is not particularly limited herein.
In some embodiments, the second reactant gas is GeH 4 With SiH 4 GeH 4 With SiH 4 The volume ratio of (2) to (5), which may be 3 or 4, is not particularly limited herein. After the first reaction gas and the second reaction gas are mixed, siGe is deposited on the surface of the wafer to form a film.
The gas treatment furnace in the above embodiment further includes a second lateral shower head 5 and a third lateral shower head 6 provided below the second area A2 of the wafer boat 2 and directed toward the inside of the gas treatment furnace in the horizontal direction X. The method of the embodiment of the disclosure further comprises the following steps: injecting a first reaction gas into the gas treatment furnace by using a second lateral nozzle 5; the second reaction gas is injected into the gas treatment furnace by the third side shower head 6.
In some embodiments, the flow rate of the first reaction gas sprayed from each of the first lateral spray head 3 and the second lateral spray head 5 is 6 to 10sccm, specifically, the flow rate of the first reaction gas may be 6sccm, 7sccm, 8sccm or 9sccm, which is not particularly limited herein. The flow rate of the first reactive gas injected from each of the first lateral showerhead 3 may be different, but the flow rate may be adjusted by the flow rate adjuster 9 when it is necessary to adjust the flow rate of the first reactive gas injected from one of the first lateral showerhead 3 or the second lateral showerhead 5 higher.
In some embodiments, the flow rate of the second reaction gas sprayed from each of the vertical spraying head 4 and the third lateral spraying head 6 is 60-120 sccm, specifically, the flow rate of the second reaction gas may be 70sccm, 80sccm, 90sccm, 100sccm or 110sccm, which is not limited herein. And the flow rate of the second reaction gas is sequentially reduced from top to bottom. Because the density of the first reaction gas is high, the first reaction gas tends to be lowered after being sprayed into the chamber C of the furnace body 1, and in order to ensure the uniformity of the gas in the whole chamber C, the flow rate of the second reaction gas is sequentially reduced from top to bottom. After the air pressure detection, if the air pressure below the chamber C is smaller than the air pressure above, the second reaction gas can be sprayed by the third lateral spray head 6 for adjustment, so that the air pressure is further ensured to be constant, and the film formation uniformity of the wafer is ensured.
In some embodiments, the method may further comprise: detecting the air pressure of a first area A1 and a second area A2 of the wafer boat 2; if the gas pressures of the first region A1 and the second region A2 are different, the flow rate of the first reaction gas and/or the second reaction gas is regulated so that the gas pressures of the first region A1 and the second region A2 are the same. The gas pressure may be sensed by the pressure sensor 8 in the above embodiment, and the flow rate of the first reactive gas and/or the second reactive gas may be regulated by the flow regulator 9 in the above embodiment after transmitting a signal via the controller 10.
In some embodiments, the method may further comprise: the top of the furnace body 1 is pumped to make the pressure of the wafer boat 2 be 0.2-0.5 Torr. The air can be pumped by the air pumping device 7 in the above embodiment, and the description is omitted here.
In some embodiments, the preset temperature in step S400 may be 300 to 500 ℃, specifically, 300 ℃, 350 ℃, 400 ℃, or 450 ℃, which is not particularly limited herein. The temperature rise process is slow temperature rise. In some embodiments, the time for injecting the first and second reaction gases into the furnace body is 20 to 40 minutes, specifically, may be 25 minutes, 30 minutes, or 35 minutes, and is not particularly limited herein.
In order to more clearly show the uniformity of film formation on the wafer surface by using the gas processing furnace and the film forming method according to the embodiments of the present disclosure, please refer to fig. 7 again, which shows the film thickness distribution after film formation on the wafer and the film thickness distribution after film formation on the wafer in the related art of the present disclosure. Wherein the abscissa indicates the thickness of the film and the ordinate indicates the position of the wafer in the vertical direction. As is apparent from fig. 7, the thicknesses of films of a plurality of wafers formed using the gas treatment furnace and the film forming method according to the embodiment of the present disclosure are significantly more uniform than those of wafers in the related art, and particularly, the uniformity of film thickness of wafers located at the bottom of the view axis is significantly improved than those of the related art.
In summary, according to the film forming method of the wafer in the embodiment of the disclosure, the first reactive gas is laterally sprayed to the first area A1 of the wafer, and the second reactive gas with the flow reduced from top to bottom is sprayed in the vertical direction Y, so that the constant air pressure in the chamber C where the wafer is located is ensured, and the uniformity of film forming of the wafer is improved.
It is to be understood that the disclosure is not limited in its application to the details of construction and the arrangement of components set forth in the disclosure. The disclosure is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications are within the scope of the present disclosure. It should be understood that the present disclosure disclosed and defined herein extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute various alternative aspects of the present disclosure. The embodiments described herein explain the best modes known for practicing the disclosure and will enable others skilled in the art to utilize the disclosure.

Claims (20)

1. A gas treatment furnace, comprising:
the furnace body is provided with a cavity;
the wafer boat is arranged in the cavity along the vertical direction and is provided with a first area and a second area from top to bottom;
the first lateral spray head faces the wafer boat and corresponds to the first area;
the vertical spray heads face the top of the chamber and are distributed in the chamber at intervals along the vertical direction.
2. The gas treatment furnace of claim 1, wherein the first side shower has a plurality of gas injection holes that are spaced apart in the vertical direction.
3. The gas treatment furnace according to claim 2, wherein the plurality of gas injection holes are distributed in the vertical direction corresponding to the first region.
4. The gas treatment furnace according to claim 2, wherein the first side shower heads are provided in plurality and are spaced apart from each other in the vertical direction, and the plurality of first side shower heads are circumferentially provided on the outside of the wafer boat.
5. The gas treatment furnace of claim 2, wherein each of the first side shower heads has 2to 6 gas injection holes.
6. The gas treatment furnace of claim 5, wherein the number of gas injection holes of each of the first side shower is the same, and a plurality of the gas injection holes are uniformly distributed in the vertical direction.
7. The gas treatment furnace according to claim 2, wherein the ratio of the dimension of the second region in the vertical direction to the dimension of the first region in the vertical direction is 1: (2-8).
8. The gas treatment furnace according to claim 2, wherein the first zone comprises a plurality of first sub-zones, each of the first sub-zones having a dimension in the vertical direction equal to a dimension of the second zone in the vertical direction; the first side spray heads are in one-to-one correspondence with the first subareas.
9. The gas treatment furnace according to claim 1, wherein the plurality of vertical shower heads are uniformly distributed in the vertical direction and are circumferentially provided on the outside of the boat.
10. The gas treatment furnace according to claim 1, further comprising:
the second lateral spray head and the third lateral spray head are arranged below the second area and face the inside of the cavity along the horizontal direction.
11. The gas treatment furnace according to claim 1, further comprising: and the air extracting device is communicated with the top of the cavity so as to extract air out of the cavity.
12. The gas treatment furnace according to claim 1, further comprising:
the pressure sensors are arranged in the first area and the second area of the wafer boat and are used for sensing the air pressure of the first area and the second area;
a flow regulator configured to regulate a flow rate of gas into the furnace body;
and the controller is respectively and electrically connected with the pressure sensors and the flow regulator, and is configured to receive signals of the pressure sensors and control the flow regulator to regulate the gas flow.
13. A film forming method for a wafer, comprising:
providing a gas treatment furnace according to any one of claims 1 to 12, and placing a plurality of wafers in a first region and a second region of a wafer boat;
heating the furnace body to a preset temperature;
spraying a first reaction gas to the wafer by using a first side shower head;
and jetting the second reaction gas along the vertical direction by utilizing a plurality of vertical nozzles, wherein the flow rate of the second reaction gas gradually decreases from top to bottom.
14. The method of claim 13, wherein the first reactant gas is BCl 3 And He, the BCl 3 The content of (2) is 6-10%.
15. The method of claim 13, wherein the second reactant gas is GeH 4 With SiH 4 Is a mixed gas of GeH 4 With SiH 4 The volume ratio of (2) to (5).
16. The method of claim 13, wherein the gas treatment furnace further comprises: the second lateral spray head and the third lateral spray head are arranged below the second area of the wafer boat and face the inside of the gas treatment furnace along the horizontal direction; the method further comprises the steps of:
injecting the first reaction gas into the gas treatment furnace by using the second lateral nozzle;
and spraying the second reaction gas into the gas treatment furnace by using the third lateral spray head.
17. The method of claim 16, wherein the flow rate of the first reactant gas ejected from each of the first and second lateral ejection heads is 6-10 sccm;
the flow rate of the second reaction gas sprayed out of each vertical spray head and each third lateral spray head is 60-120 sccm, and the flow rate of the second reaction gas is sequentially reduced from top to bottom.
18. The method as recited in claim 13, further comprising:
detecting air pressure of the first area and the second area of the wafer boat;
and if the air pressure of the first area is different from the air pressure of the second area, regulating and controlling the flow of the first reaction gas and/or the second reaction gas so that the air pressure of the first area is the same as the air pressure of the second area.
19. The method as recited in claim 13, further comprising: and exhausting air from the top end of the furnace body to ensure that the air pressure of the wafer boat is 0.2-0.5 Torr.
20. The method of claim 13, wherein the predetermined temperature is 300-500 ℃.
CN202111563936.1A 2021-12-20 2021-12-20 Gas processing furnace and film forming method for wafer Pending CN116288263A (en)

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