CN116275026A - Preparation method of aluminum silicon carbide material based on plasma deposition - Google Patents
Preparation method of aluminum silicon carbide material based on plasma deposition Download PDFInfo
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- CN116275026A CN116275026A CN202111548376.2A CN202111548376A CN116275026A CN 116275026 A CN116275026 A CN 116275026A CN 202111548376 A CN202111548376 A CN 202111548376A CN 116275026 A CN116275026 A CN 116275026A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 72
- 239000000463 material Substances 0.000 title claims abstract description 51
- 230000008021 deposition Effects 0.000 title claims abstract description 50
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000002245 particle Substances 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 238000005507 spraying Methods 0.000 claims abstract description 19
- 238000001513 hot isostatic pressing Methods 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims description 74
- 238000000151 deposition Methods 0.000 claims description 54
- 229910000838 Al alloy Inorganic materials 0.000 claims description 40
- 239000007921 spray Substances 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 235000019580 granularity Nutrition 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000003607 modifier Substances 0.000 claims description 18
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 9
- 239000011812 mixed powder Substances 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 8
- 238000000498 ball milling Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000004321 preservation Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 235000021355 Stearic acid Nutrition 0.000 claims description 5
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 5
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 5
- 239000008117 stearic acid Substances 0.000 claims description 5
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 claims description 4
- 239000012188 paraffin wax Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 description 12
- 239000002131 composite material Substances 0.000 description 10
- 238000012805 post-processing Methods 0.000 description 7
- 238000009718 spray deposition Methods 0.000 description 7
- 238000007751 thermal spraying Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000001540 jet deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002258 plasma jet deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000713 high-energy ball milling Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Coating By Spraying Or Casting (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention discloses a preparation method of an aluminum silicon carbide material based on plasma deposition, which comprises the following steps: 1) Particle size grading; 2) Primary coating; 3) Coating by hot spraying; 4) Plasma deposition 5) hot isostatic pressing of the rough blank to finally obtain the aluminum silicon carbide. The invention discloses a preparation method of an aluminum silicon carbide material based on plasma deposition, which is used for obtaining the aluminum silicon carbide material with high silicon carbide volume fraction, lower porosity, high thermal conductivity and adjustable thermal expansion coefficient.
Description
Technical Field
The invention discloses a preparation method of an aluminum silicon carbide material based on plasma deposition, which relates to the technical field of preparation of aluminum silicon carbide materials.
Background
The aluminum silicon carbide material is an inorganic nonmetallic particle reinforced metal base material which is compounded by taking aluminum alloy as a matrix and taking silicon carbide in a certain form, proportion and distribution state as a reinforcement according to design requirements. The material has excellent mechanical and thermal physical properties such as light weight, high specific strength, high heat conductivity, adjustable thermal expansion coefficient and the like, and is widely applied to the fields of electronic packaging, precise instruments, automobile parts, aerospace and the like.
There are many methods for preparing aluminum silicon carbide materials, and stirring casting, powder metallurgy, infiltration casting and jet deposition are common. The spray deposition method is a forming process for preparing metal composite material under the action of inert gas by combining molten metal atomization and deposition process, and the process comprises the steps of melting base metal, atomizing the liquid metal, adding particles, mixing metal atomized flows, depositing, solidifying and the like. The jet deposition method utilizes the characteristic of quick solidification, the temperature required by production is relatively low, the contact time between particles is very short, crystal grains can be obviously thinned, macrosegregation is avoided, interface reaction is reduced, oxidation degree is reduced, the volume fraction and the size of the reinforcement can not be limited, and the comprehensive performance of the product is greatly improved.
Although the jet deposition method has shorter process and simpler technology, the equipment has higher cost, the utilization rate of the powder raw materials is lower, generally only 20-30 percent, and the prepared composite material has larger porosity and generally needs to be further processed and densified by combining hot isostatic pressing or extrusion.
Disclosure of Invention
In view of the above, the invention discloses a preparation method of an aluminum silicon carbide material based on plasma deposition, so as to obtain the aluminum silicon carbide material with high volume fraction, lower porosity, high thermal conductivity and high bending strength.
The technical scheme provided by the invention is that the preparation method of the aluminum silicon carbide material based on plasma deposition comprises the following steps:
1) Particle grading: silicon carbide powder and aluminum alloy powder with different granularities are respectively selected; obtaining spare silicon carbide powder and aluminum alloy powder;
2) Mixing the silicon carbide powder and the aluminum alloy powder which are prepared in the step 1) to obtain mixed powder, and primarily coating the mixed powder by adding a modifier through mechanical means;
3) Carrying out thermal spray coating on the powder subjected to primary coating to obtain aluminum alloy coated silicon carbide powder;
4) Plasma depositing the aluminum alloy coated silicon carbide powder to obtain a rough blank of an aluminum silicon carbide material;
5) And (5) hot isostatic pressing the rough blank to finally obtain the aluminum silicon carbide.
In the step 1), two or more silicon carbide powder with different particle sizes are selected, wherein small particles in the silicon carbide powder with different particle sizes: medium particles: the mass ratio of the large particles is as follows: 3/3/4-2/3/5; the granularity of the silicon carbide powder is 0.1-500 mu m; the granularity of the aluminum alloy powder is 0.1-100 mu m.
The aluminum alloy powder is one of high-purity aluminum powder, 6061 aluminum alloy powder and 7050 aluminum alloy powder.
The silicon carbide in the mixed powder in the step 2) accounts for 40-50% by volume.
The mechanical means in the step 2) is a high-energy ball mill which is a zirconia grinding ball, and the mass ratio of the material to the ball is 1/2; the revolution of the high-energy ball mill is 2000-3000rpm, and the ball milling time is 2-5h.
The mass percent of the modifier added in the step 2) is less than or equal to 3 percent.
The modifier is one of stearic acid, paraffin and resin.
The step 3) specifically comprises the following steps:
a. adding the primarily coated powder into a stirrer, and then adding water as a solvent, wherein the mass ratio of the water to the material is 1/1-1/2;
b. adding a binder into the solution, wherein the addition mass percent of the binder is less than or equal to 3%; adding the binder, and stirring for 0.5-2h; wherein the binder is one of PVA and resin;
c. and (3) carrying out thermal spray coating treatment on the stirred slurry, wherein the nozzle size phi is 0.5-2mm, the spray temperature is 150-190 ℃, and the spray pressure is 0.05-0.1Mpa, and finally obtaining the aluminum alloy coated silicon carbide powder.
The parameter settings related to the plasma deposition in the step 4) include the following steps:
the diameter of the nozzle outlet is 6-12mm; the distance between the spray gun and the matrix is 5-15cm, and the argon flow is 1000-2000L/min; the arcing current is 500-800A; the hydrogen flow is controlled by voltage, and the voltage is 60-80V; the powder feeding speed of the spray gun in the powder feeder is 5-50g/min; the deposition times of the manipulator are 5-30 times/time.
The conditions for hot isostatic pressing in step 5) are: the protective gas is nitrogen, the pressure is 10-20MPa, the temperature is 800-1000 ℃, and the heat preservation time is 1-5h.
According to the preparation method of the aluminum silicon carbide material based on plasma deposition, provided by the invention, silicon carbide and aluminum alloy powder with different types and different particle sizes are used for reasonable particle grading, and the mechanical coating and thermal spray coating modes are combined to prepare single and uniform coating type powder suitable for plasma spray deposition, so that the preparation method is favorable for plasma deposition and product performance improvement.
The high-performance aluminum silicon carbide composite material prepared by the method has the silicon carbide volume fraction of 40-50% and the density of 3+/-0.1 g/cm 3 The thermal conductivity can reach more than 200W/(m.k), and the thermal expansion coefficient (6.5-12.5) is 10 -6 The range of/k is adjustable, the size meets the product requirement, and the method has good application prospect.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure of the invention as claimed.
Detailed Description
Exemplary embodiments will be described in detail herein. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of systems consistent with aspects of the invention as detailed in the accompanying claims.
In order to solve the problems of low utilization rate of the aluminum silicon carbide material, large porosity of the composite material and the like in the prior art, the embodiment provides a preparation method of the aluminum silicon carbide material based on plasma deposition, and silicon carbide and aluminum alloy powder with different granularities are selected according to requirements to carry out reasonable grain composition; carrying out high-energy ball milling on the powder, and uniformly distributing the modifier on the outer surface of the powder particles by utilizing mechanical forces such as extrusion, impact, shearing, friction and the like to enable various components to mutually infiltrate and diffuse so as to form primary coating; then adding proper dispersing agent and binder, mixing and ball milling to prepare slurry, and carrying out thermal spraying treatment on the slurry to finish final coating of powder, and generating uniform mixed powder meeting the deposition condition through reaction; the utilization rate of the powder is improved by controlling the parameters of the plasma deposition process, and a rough blank of the aluminum silicon carbide material is precipitated; the rough blank is subjected to hot isostatic pressing. Finally, the silicon carbide material with high volume fraction, lower porosity, high thermal conductivity and high bending strength is prepared.
The technological process of preparing aluminium silicon carbide material with plasma deposition includes mainly powder selection, mechanical coating, hot spray coating, plasma deposition, hot isostatic pressing and post-processing.
The specific implementation steps are as follows:
1) Particle grading: silicon carbide powder and aluminum alloy powder with different granularities are respectively selected; obtaining spare silicon carbide powder and aluminum alloy powder;
according to the requirements of the volume fraction, density, heat conductivity and thermal expansion coefficient of the silicon carbide of the target product, in the range of 0.1-500um, selecting two or more silicon carbide powder with different granularities for standby, wherein the grain composition is as follows: the mass ratio of small particles/medium particles/large particles is 3/3/4 to 2/3/5, and the sizes of different grade particles are usually different by more than 10 times; selecting different kinds of aluminum alloy powder with granularity of 0.1-100um, such as high-purity aluminum powder, 6061 aluminum alloy powder and 7050 aluminum alloy powder;
2) Mixing the standby silicon carbide powder and the aluminum alloy powder which are selected in the step 1) to obtain mixed powder, and primarily coating the mixed powder by adding a modifier through mechanical means;
adding the selected powder into a high-energy ball mill, wherein the silicon carbide accounts for 40-50% of the total volume; adding modifying agents such as stearic acid, paraffin, resin and the like into the additive, wherein the mass ratio of the modifying agents is not more than 3%; then using zirconia grinding balls, wherein the mass ratio of the materials to the balls is 1/2; the revolution of the high-energy ball mill is 2000-3000rpm, and the ball milling time is 2-5h;
3) Carrying out thermal spray coating on the powder subjected to primary coating to obtain aluminum alloy coated silicon carbide powder;
adding the primarily coated powder into a stirrer, and then adding water as a solvent, wherein the mass ratio of the water to the material is 1/1-1/2; the adhesive is added with modifiers such as PVA, resin and the like, and the mass ratio of the modifier is not more than 3%; stirring for 0.5-2h; and (3) carrying out thermal spraying coating treatment on the stirred slurry, wherein the nozzle size phi is 0.5-2mm, the spraying temperature is 150-190 ℃, the spraying pressure is 0.05-0.1Mpa, and the aluminum alloy coated silicon carbide powder with uniform granularity and good fluidity is obtained.
4) Plasma depositing the aluminum alloy coated silicon carbide powder to obtain a rough blank of an aluminum silicon carbide material;
adjusting a spray gun nozzle according to the performance requirements of the volume fraction, density, thermal conductivity and thermal expansion coefficient of silicon carbide, wherein the diameter of an outlet of the spray gun nozzle is 6-12mm; the distance between the spray gun and the matrix is adjusted to be 5-15cm, and the main power supply of the spray deposition equipment is used; turning on main switches of hydrogen, argon and nitrogen, and turning on a switch of a water cooling device; the power supply is sequentially pressed down on the deposition control cabinet to start and work for preparation, whether the argon flow is 1000-2000L/min is manually adjusted, and after the arcing is successful, the current on the deposition control cabinet is adjusted to 500-800A; the hydrogen flow is controlled by voltage, and the voltage is regulated to 60-80V; starting a powder feeder, and feeding the coated powder into a spray gun at a powder feeding speed of 5-50g/min; starting the manipulator, and depositing for 5-30 times/time; and after the deposition is finished, the mechanical arm, the powder feeder, the gas, the electric control device and the water cooling device switch are sequentially closed to finish the deposition.
The spray deposition is carried out by using a single fluid mode, so that the mutual interference of double fluid deposition is avoided, the performance of the material is ensured, and the energy consumption and the production period are reduced.
Under lower pressure, the single fluid powder feeding plasma jet deposition is used to raise the utilization rate of powder to 40-50%, so that the crystal grains of the product are obviously thinned, macrosegregation is avoided, interface reaction is reduced, and the product performance is improved
5) And (5) hot isostatic pressing the rough blank to finally obtain the aluminum silicon carbide.
And placing the rough blank of the aluminum silicon carbide material in kiln furniture, and performing hot isostatic pressing treatment on the rough blank. Nitrogen which does not react with silicon carbide and aluminum alloy is selected as protective gas, the pressure is 10-20MPa, the temperature is 800-1000 ℃, and the heat preservation time is 1-5h. And cooling to obtain the aluminum silicon carbide composite material, and carrying out post-processing on the aluminum silicon carbide composite material according to the requirement of the product size to prepare an aluminum silicon carbide product.
In the embodiment, silicon carbide and aluminum alloy powder with different types and different particle sizes are used for reasonable particle grading, and the mechanical coating and the thermal spraying coating are combined to prepare single and uniform coating type powder suitable for plasma jet deposition, so that the performance of plasma deposition and the performance of products are improved.
Example 1
1) Powder selection: selecting three silicon carbide powder with different particle sizes of 0.1um,1um and 10um for standby, wherein the mass ratio of small particles/medium particles/large particles with particle size is 3/3/4 for standby;
and selecting 6061 aluminum alloy powder with the granularity of 0.1um and 5um for standby.
2) Mechanical cladding:
according to the density of the product being more than 3g/cm 3 Adding the powder into a high-energy ball mill, wherein the volume ratio of silicon carbide is 50%;
adding stearic acid as a modifier, wherein the mass ratio of the stearic acid to the modifier is 1%;
using zirconia grinding balls, wherein the mass ratio of the materials to the balls is 1/2;
the revolution of the high-energy ball mill is 3000rpm, and the ball milling time is 5 hours;
3) And (3) hot spray coating:
adding the powder into a stirrer, and adding water as a solvent, wherein the mass ratio of the water to the material is 1/2;
the adhesive is added with modifiers such as resin and the like, and the mass ratio is 1%; stirring for 2h;
and (3) carrying out thermal spraying coating treatment on the stirred slurry, wherein the nozzle size phi is 0.5mm, the spraying temperature is 190 ℃, and the spraying pressure is 0.1Mpa, so that the aluminum alloy coated silicon carbide powder with uniform granularity and good fluidity is obtained.
4) Plasma deposition:
adjusting a spray gun nozzle according to the product requirement, wherein the diameter of the nozzle outlet is 6mm;
the distance between the spray gun and the matrix is adjusted to be 5cm, and the main power supply of the spray deposition equipment is used; turning on main switches of hydrogen, argon and nitrogen, and turning on a switch of a water cooling device;
the power supply is sequentially pressed down on the deposition control cabinet to start and work for preparation, the argon flow is manually adjusted to 1000L/min, and after the arcing is successful, the current is adjusted to 500A on the deposition control cabinet; the hydrogen flow is controlled by voltage, and the voltage is regulated to 60V;
starting a powder feeder, and feeding the coated powder into a spray gun at a powder feeding speed of 5g/min;
starting the manipulator, and depositing for 5 times/times
And after the deposition is finished, sequentially closing the switch of the manipulator, the powder feeder, the gas, the electric control device and the water cooling device to finish the deposition and obtain a rough blank of the aluminum silicon carbide material.
5) Hot isostatic pressing and post-processing
And placing the rough blank of the silicon carbide material in kiln furniture, and performing hot isostatic pressing treatment on the rough blank.
Nitrogen which does not react with silicon carbide and aluminum alloy is selected as protective gas, the pressure is 10MPa, the temperature is 80 ℃, and the heat preservation time is 1h.
And cooling to obtain the aluminum silicon carbide composite material, and carrying out later processing on the aluminum silicon carbide composite material according to the requirement of the product size to prepare an aluminum silicon carbide product with the thickness of 200mm and 200 mm.
Example 2
1) Powder selection:
three silicon carbide powder with different particle sizes of 1um,10um and 150um are selected for standby, and the mass ratio of small particles/medium particles/large particles with particle size is 2/3/5 for standby;
(2) 7050 aluminum alloy powder with granularity of 0.1um and 1um is selected for standby.
2) Mechanical cladding:
according to the thermal expansion coefficient of the product being more than 10 x 10 -6 According to performance requirements of the temperature/DEG C, adding the powder into a high-energy ball mill, wherein the volume ratio of silicon carbide is 45%;
the additive is added with paraffin as a modifier, and the mass ratio is 2%;
using zirconia grinding balls, wherein the mass ratio of the materials to the balls is 1/2;
the revolution of the high-energy ball mill is 2500rpm, and the ball milling time is 3 hours;
3) And (3) hot spray coating:
adding the powder into a stirrer, and adding water as a solvent, wherein the mass ratio of the water to the material is 2/3;
PVA is added as a modifier, and the mass percentage of the PVA is 2%; stirring for 1h;
and (3) carrying out thermal spraying coating treatment on the stirred slurry, wherein the nozzle size phi is 1mm, the spraying temperature is 190 ℃, the spraying pressure is 0.1Mpa, and the aluminum alloy coated silicon carbide powder with uniform granularity and good fluidity is obtained.
4) Plasma deposition:
adjusting a spray gun nozzle according to the product requirement, wherein the diameter of the nozzle outlet is 9mm;
the distance between the spray gun and the matrix is adjusted to be 10cm, and the main power supply of the spray deposition equipment is used; turning on main switches of hydrogen, argon and nitrogen, and turning on a switch of a water cooling device;
the power supply is sequentially pressed down on the deposition control cabinet to start and work for preparation, the argon flow is manually adjusted to 1500L/min, and after the arcing is successful, the current is adjusted to 700A on the deposition control cabinet; the hydrogen flow is controlled by voltage, and the voltage is regulated to 70V;
starting a powder feeder, and feeding the coated powder into a spray gun at a powder feeding speed of 30g/min;
starting the manipulator, and depositing 15 times/times
And after the deposition is finished, sequentially closing the switch of the manipulator, the powder feeder, the gas, the electric control device and the water cooling device to finish the deposition and obtain a rough blank of the aluminum silicon carbide material.
5) Hot isostatic pressing and post-processing
And placing the obtained rough blank of the aluminum silicon carbide material into kiln furniture, and performing hot isostatic pressing treatment on the rough blank.
Nitrogen which does not react with silicon carbide and aluminum alloy is selected as protective gas, the pressure is 15MPa, the temperature is 900 ℃, and the heat preservation time is 3 hours.
Cooling to obtain aluminum silicon carbide composite material, and post-processing according to the product size requirement to prepare 100mm aluminum silicon carbide product
Example 3
1) Powder selection:
selecting silicon carbide powder with the granularity of 50um and 500um and two different granularities for standby, wherein the granularity grading is 7/3 for standby;
7050 aluminum alloy powder with granularity of 50um and 100m is selected for standby.
2) Mechanical cladding:
adding the powder into a high-energy ball mill according to the performance requirement that the thermal conductivity of the product is more than 200W/(m.k) (25 ℃), wherein the volume ratio of silicon carbide is 40%;
adding resin as a modifier, wherein the mass ratio of the resin is 3%;
using zirconia grinding balls, wherein the mass ratio of the materials to the balls is 1/2;
the revolution of the high-energy ball mill is 2000rpm, and the ball milling time is 2 hours;
3) And (3) hot spray coating:
adding the powder into a stirrer, and adding water as a solvent, wherein the mass ratio of the water to the material is 1/1;
adding modifier such as resin and the like, wherein the mass ratio of the modifier is 0.5%; stirring time is 0.5h;
and (3) carrying out thermal spraying coating treatment on the stirred slurry, wherein the nozzle size phi is 2mm, the spraying temperature is 150 ℃, the spraying pressure is 0.05Mpa, and the aluminum alloy coated silicon carbide powder with uniform granularity and good fluidity is obtained.
4) Plasma deposition:
adjusting a spray gun nozzle according to the product requirement, wherein the diameter of the nozzle outlet is 12mm;
the distance between the spray gun and the matrix is adjusted to 15cm, and the main power supply of the spray deposition equipment is used; turning on main switches of hydrogen, argon and nitrogen, and turning on a switch of a water cooling device;
the power supply is sequentially pressed down on the deposition control cabinet to start and work for preparation, the argon flow is manually adjusted to 2000L/min, and after the arcing is successful, the current is adjusted to 800A on the deposition control cabinet; the hydrogen flow is controlled by voltage, and the voltage is regulated to 80V;
starting a powder feeder, and feeding the coated powder into a spray gun at a powder feeding speed of 50g/min;
starting the manipulator, and depositing for 30 times/time;
and after the deposition is finished, the mechanical arm, the powder feeder, the gas, the electric control device and the water cooling device switch are sequentially closed to finish the deposition.
5) Hot isostatic pressing and post-processing
And placing the silicon carbide preform and the aluminum alloy profile into kiln furniture, and performing hot isostatic pressing treatment on the rough blank.
Nitrogen which does not react with silicon carbide and aluminum alloy is selected as protective gas, the pressure is 20MPa, the temperature is 1000 ℃, and the heat preservation time is 5 hours.
And cooling to obtain the aluminum silicon carbide composite material, and carrying out later processing on the aluminum silicon carbide composite material according to the requirement of the product size to prepare an aluminum silicon carbide product with the thickness of 100mm and 50 mm.
Comparative example 1
Adopts the technical steps in the prior art: comprising the following steps: powder selection and mixing, plasma deposition, hot isostatic pressing, post-processing and the like; the results obtained are compared with the data results of this embodiment as follows:
| this embodiment | Other deposition processes | |
| Powder utilization rate | 40-50％ | 20-30％ |
| Silicon carbide volume fraction% | 40-50％ | 30-40％ |
| Density% | 3±0.1 | 2.5±0.3 |
| Thermal conductivity W/(m.k) (25 ℃ C.) | >200 | 180±10 |
| Coefficient of thermal expansion 10 -6 /℃ | 6-12.5 | 7-9 |
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that the invention is not limited to the precise construction that has been described above, and that various modifications and changes may be effected therein without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. The preparation method of the aluminum silicon carbide material based on plasma deposition is characterized by comprising the following steps of:
1) Particle grading: silicon carbide powder and aluminum alloy powder with different granularities are respectively selected; obtaining spare silicon carbide powder and aluminum alloy powder;
2) Mixing the silicon carbide powder and the aluminum alloy powder which are prepared in the step 1) to obtain mixed powder, and primarily coating the mixed powder by adding a modifier through mechanical means;
3) Carrying out thermal spray coating on the powder subjected to primary coating to obtain aluminum alloy coated silicon carbide powder;
4) Plasma depositing the aluminum alloy coated silicon carbide powder to obtain a rough blank of an aluminum silicon carbide material;
5) And (5) hot isostatic pressing the rough blank to finally obtain the aluminum silicon carbide.
2. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 1, wherein two or more silicon carbide powder with different particle sizes are selected in the step 1), and small particles in the silicon carbide powder with different particle sizes: medium particles: the mass ratio of the large particles is as follows: 3/3/4-2/3/5; the granularity of the silicon carbide powder is 0.1-500 mu m; the granularity of the aluminum alloy powder is 0.1-100 mu m.
3. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 2, wherein the aluminum alloy powder is one of high-purity aluminum powder, 6061 aluminum alloy powder and 7050 aluminum alloy powder.
4. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 1, wherein the silicon carbide in the mixed powder in step 2) accounts for 40-50% by volume.
5. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 1, wherein the mechanical means in the step 2) is a high-energy ball mill, the high-energy ball mill is a zirconia grinding ball, and the mass ratio of the material to the ball is 1/2; the revolution of the high-energy ball mill is 2000-3000rpm, and the ball milling time is 2-5h.
6. The method for preparing an aluminum silicon carbide material based on plasma deposition according to claim 1, wherein the modifier in the step 2) is added in an amount of 3% by mass or less.
7. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 6, wherein the modifier is one of stearic acid, paraffin wax and resin.
8. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 1, wherein the step 3) specifically comprises:
a. adding the primarily coated powder into a stirrer, and then adding water as a solvent, wherein the mass ratio of the water to the material is 1/1-1/2;
b. adding a binder into the solution, wherein the addition mass percent of the binder is less than or equal to 3%; adding the binder, and stirring for 0.5-2h; wherein the binder is one of PVA and resin;
c. and (3) carrying out thermal spray coating treatment on the stirred slurry, wherein the nozzle size phi is 0.5-2mm, the spray temperature is 150-190 ℃, and the spray pressure is 0.05-0.1Mpa, and finally obtaining the aluminum alloy coated silicon carbide powder.
9. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 1, wherein the setting of the parameters related to the plasma deposition in step 4) comprises the following steps:
the diameter of the nozzle outlet is 6-12mm; the distance between the spray gun and the matrix is 5-15cm, and the argon flow is 1000-2000L/min; the arcing current is 500-800A; the hydrogen flow is controlled by voltage, and the voltage is 60-80V; the powder feeding speed of the spray gun in the powder feeder is 5-50g/min; the deposition times of the manipulator are 5-30 times/time.
10. The method for preparing aluminum silicon carbide material based on plasma deposition according to claim 1, wherein the conditions of the hot isostatic pressing in step 5) are: the protective gas is nitrogen, the pressure is 10-20MPa, the temperature is 800-1000 ℃, and the heat preservation time is 1-5h.
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| CN117049545A (en) * | 2023-10-10 | 2023-11-14 | 北京航空航天大学 | Silicon carbide pretreatment method and application thereof in preparation of aluminum-based composite material |
| CN117049545B (en) * | 2023-10-10 | 2024-02-06 | 北京航空航天大学 | Silicon carbide pretreatment method and application thereof in preparation of aluminum-based composite material |
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