CN116261390A - Oxide-based flexible micro-nano device and preparation method thereof - Google Patents
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Abstract
The invention discloses an oxide-based flexible micro-nano device, which comprises a substrate layer, a buffer layer and a film layer which are sequentially arranged from bottom to top, wherein the substrate layer is made of monocrystalline mica, and the buffer layer is made of SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 One of the materials of the film layer is selected from SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 The invention also provides a preparation method of the oxide-based flexible micro-nano device, compared with the prior art, the inventionThe oxide-based flexible micro-nano device uses mica as a flexible substrate, can directly epitaxially grow various single crystal oxides in a large area at high temperature, the film and the mica are tightly combined by Van der Waals force, gaps do not exist at the interface, the defects of bubbles, gaps and the like generated in flexible preparation are avoided, the structure stability and the impact resistance are good, and in addition, the flexible bending strain is continuously adjustable.
Description
Technical Field
The invention belongs to the technical field of magnetic materials and components, and particularly relates to an oxide-based flexible micro-nano device and a preparation method thereof.
Background
With the continuous rapid development of the big data age, the traditional electronic device faces the problems of physical limit of size, rapid increase of power consumption, poor compatibility of human body and the like in the size shrinking process, and the increasing development demands are difficult to meet. The flexible spintronics device combines the characteristics of high density, low power consumption, high sensitivity and the like of the spintronics device, greatly expands the application scene of the electronic device through a flexible technology, and is hopeful to become one of solutions meeting the future development demands.
Current flexible spintronics devices are mainly prepared directly on organic flexible substrates such as PI, PEN, etc., or on Si/SiO 2 And processing and preparing the substrate with equal rigidity, thinning and softening the substrate and the like. However, since the organic substrate is not resistant to high temperature by the method, the flexible spintronics material system is limited to a metal system with weak response to bending strain, such as CoFeB, pt and the like, and the properties of the flexible film are still to be optimized. The latter has the defects of complex process, high cost and the like. Therefore, development of flexible spintronics devices is urgently needed to develop material systems, develop functional materials with excellent performance, and develop more advanced flexible processes.
The oxide not only has certain temperature and chemical stability naturally, but also presents rich functional characteristics such as ferroelectricity, ferromagnetism, thermoelectricity, spin orbit coupling and the like due to multi-degree-of-freedom coupling such as charge, spin, crystal lattice, orbit, topology and the like, and is an ideal material system for researching flexible spintronics. Currently, there are two main methods for the flexibility of oxide films: one is a sacrificial layer-based lift-off transfer method that obtains a self-supporting target film by dissolving a sacrificial layer and then transfers it to a target flexible substrate. The method can prepare films with different crystal orientations and realize larger tensile stress application. However, due to substrate size limitations and process considerations, it is difficult to truly achieve large area fabrication, and to meet surface flatness requirements without bubbles, gaps, cracks, etc., limiting its research and application. The other Van der Waals epitaxy method based on the mica substrate can directly grow a monocrystal film at high temperature, and compared with the former, the film and the mica are combined by Van der Waals force, so that the interface combination quality is high, the peeling and transferring process is reduced, the generation of transferring defects such as bubbles and gaps is avoided, and the structure stability and the impact resistance are good. In addition, the mica substrate has no size limitation, does not need lattice matching, can prepare various oxides in a large area, and is widely welcomed.
However, mica is brittle and the ductility of oxide is poor, so that cracks are easy to generate in micro-nano processing and flexible bending processes. Therefore, the method is mostly used for regulating and controlling the non-transport property (such as magnetic moment) of the oxide, and the flexible oxide magnetoelectric transport property based on the method has little research, not to mention the micro-nano spin electronic device.
Therefore, micro-nano processing and the non-destructive modification of flexible bending are critical for the fabrication of defect-free and structurally stable flexible oxide spintronics devices. In addition, the micro-nano structure can also avoid the problem of serious deviation of a magnetic field and the direction of the thin film at each place caused by large surface bending of the thin film. The method provides a new material system and a preparation process for the flexible spintronics research, provides additional bending freedom for the oxide spintronics research, and has important significance for the development of spintronics and the application of low-power-consumption flexible spintronics devices.
Disclosure of Invention
The invention aims to provide a preparation method of an oxide-based flexible micro-nano device, which has the advantages of simplicity, easiness in implementation, flat surface, stable structure, large-area preparation, continuous bending and the like.
In order to achieve the above purpose, the invention adopts the following technical scheme: an oxide-based flexible micro-nano device comprises a substrate layer, a buffer layer and a film layer which are sequentially arranged from bottom to top, wherein the substrate layer is made of monocrystalline mica, and the buffer layer is made of SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 One of the materials of the film layer is selected from SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 One of them.
In the oxide-based flexible micro-nano device, the chemical formula of the fluorine crystal mica (mica) substrate is KMg 3 (AlSi 3 O 10 )F 2 The two-dimensional layered structure is combined between layers by Van der Waals force, can resist high temperature, has the thickness smaller than a certain degree, can realize flexible bending, and can avoid the defects of bubbles, gaps and the like of a transfer film by directly epitaxially growing an oxide film through a mica substrate.
Preferably, the material of the buffer layer is SrTiO 3 The buffer layer has a (111) crystal orientation, and the thin film layer is made of SrRuO 3 And the thin film layer has a (111) crystal orientation.
The invention selects SrTiO with perovskite structure 3 (STO) as a buffer layer, which is stable in dielectric properties and lattice-matched to most perovskite oxides (lattice constant
) Meanwhile, the STO can epitaxially grow on the surface of the mica, and simultaneously provides a flat (111) surface, thereby being beneficial to the high-quality growth of the monocrystalline film, and in addition, in the micro-nano processing process of the film, the direct etching of the mica is avoided, and the effect is realizedThe unstable factors influencing the electrical transport property test in the bending process are reduced, so that the material becomes a preferred buffer material.
Preferably, the thickness of the substrate layer is less than or equal to 50 mu m, the thickness of the buffer layer is 10-100nm, and the thickness of the film layer is less than or equal to 1 mu m. The STO buffer layer is not too thin, and the too thin layer is easy to cause the problems of uneven appearance, poor crystallization quality, small etching allowance and the like of the target film. The thinner the mica thickness is, the better the flexibility is, can place on the mould of bigger camber, but less than about 5 mu m adopt this method to peel off the thinning in the laboratory mechanically very easily to lead to mica cracked, in addition the stress that exerts on the film is proportional with mica thickness and camber, so thicker mica, also be favorable to stress to exert, but more than 50 mu m basically do not possess considerable flexible bending deformation.
Preferably, the growth temperature of the buffer layer is 300-900 ℃, and the growth temperature of the film layer is 300-900 ℃.
The invention also aims to provide a preparation method of the oxide-based flexible micro-nano device, which specifically comprises the following steps:
s1, depositing a buffer layer on a substrate layer by adopting a pulse laser deposition method;
s2, depositing a film layer on the buffer layer prepared in the step S1 by adopting a pulse laser deposition method;
s3, carrying out micro-nano processing on the film layer prepared in the step S2 to obtain a test pattern on the film layer;
s4, stripping and thinning the substrate layer in the step S3 to obtain an oxide-based flexible micro-nano device blank;
s5, performing heat release on the oxide-based flexible micro-nano device blank obtained in the step S4 to obtain an oxide-based flexible micro-nano device semi-finished product;
and S6, packaging the upper surface and the lower surface of the semi-finished product of the oxide-based flexible micro-nano device prepared in the step S5 to obtain the oxide-based flexible micro-nano device.
In the preparation process, the buffer layer provides fault tolerance for the depth of argon etching, the problems of incomplete etching of the SRO film, micro cracks of the mica substrate and the like are avoided, electrode patterns are carefully designed, and electrode wiring positions are arranged on two sides of the mica edge, so that subsequent packaging and wiring procedures are conveniently carried out in a laboratory.
Preferably, in the step S1 or the step S2, the pulsed laser deposition method is selected from one of a pulsed laser deposition method, a magnetron sputtering method, a molecular beam epitaxy method, and a physical vapor deposition method.
Preferably, specific parameters of pulsed laser deposition are as follows: the temperature of the substrate is 800-900 ℃, and the energy density of the pulse laser is 1.2-1.4J/cm 2 The pulse laser frequency is 3-5Hz, firstly, a plurality of pulses are grown under the low oxygen pressure of 0.01mbar, and when the buffer layer is grown in 3D, the buffer layer is grown in two dimensions under the high oxygen pressure of 0.15 mbar.
Preferably, in the step S2, specific parameters of the pulsed laser deposition are as follows: the substrate temperature is 650-750deg.C, oxygen gas pressure is 0.15mbar, and pulse laser energy density is 1.2-1.4J/cm 2 The pulse laser frequency is 1-3Hz.
Preferably, in the step S4, the specific steps of peeling and thinning are as follows: and (3) using a low-viscosity heat release adhesive tape to paste and fix the upper surface of the film layer, and stripping and thinning the side, far away from the film layer, of the substrate layer by adopting a surgical knife cutting method or an adhesive tape thinning method. The micro-nano processing is arranged before the thinning process, and the micro-nano processing of the thin and brittle sample has difficulty, so that the sample can be further processed by sticking PI double faced adhesive tape on the Si sheet for further reducing the difficulty.
Preferably, in the step S5, the heat release temperature is 90 to 120 ℃.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, the oxide-based flexible micro-nano device uses mica as a flexible substrate, various oxides can be directly epitaxially grown at high temperature in a large area, a film and the mica are tightly combined with each other by Van der Waals force, gaps are not formed at interfaces, defects such as bubbles and gaps generated in flexible preparation are avoided, the structure stability and the impact resistance are good, and in addition, the flexible bending strain is continuously adjustable;
2. the oxide-based flexible micro-nano device uses the oxide as a buffer layer, can provide a (111) surface with ordered crystal lattice and flat surface, is beneficial to high-quality growth of a monocrystalline film, and in addition, in the micro-nano processing process of the film, the mica is prevented from being directly etched, and unstable factors such as cracks affecting the electrical transport performance test in the bending process are effectively reduced;
3. the double-sided packaging can balance possible stress influence of the single-sided adhesive tape on sample bending, and effectively isolate the sample from contact with air to protect the sample.
4. The flexible support, thinning, releasing, packaging and other processes used by the invention have the advantages of simplicity, rapidness, economy, environmental protection and the like.
Drawings
FIG. 1 shows SrTiO in example 1 of the present invention 3 Reflective high-energy electron diffraction patterns and final surface morphology during layer growth;
FIG. 2 is a view of SrRuO in example 1 of the present invention 3 A reflective high-energy electron diffraction pattern and a surface morphology of the thin film layer;
FIG. 3 is SrTiO in example 1 of the present invention 3 Layer and SrRuO 3 X-ray diffraction pattern of the thin film layer;
FIG. 4 is a flow chart of the preparation of an oxide-based flexible micro-nano device according to example 1 of the present invention;
FIG. 5 is a schematic diagram of an oxide-based flexible micro-nano device according to example 1 of the present invention;
FIG. 6 is SrRuO in example 1 of the present invention 3 The anomalous hall effect of the thin film layer varies with bending strain.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In addition, for numerical ranges in this disclosure, it is understood that each intermediate value between the upper and lower limits of the ranges is also specifically disclosed. Every smaller range between any stated value or stated range, and any other stated value or intermediate value within the stated range, is also encompassed within the invention. The upper and lower limits of these smaller ranges may independently be included or excluded in the range.
It will be apparent to those skilled in the art that various modifications and variations can be made in the specific embodiments of the invention described herein without departing from the scope or spirit of the invention. Other embodiments will be apparent to those skilled in the art from consideration of the specification of the present invention. The specification and examples are exemplary only.
The embodiment of the invention provides an oxide-based flexible micro-nano device, which comprises a substrate layer, a buffer layer and a film layer which are sequentially arranged from bottom to top, wherein the substrate layer is made of monocrystalline mica, and the buffer layer is made of SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 One of the materials of the film layer is selected from SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 One of them.
In a preferred embodiment of the present invention, the material of the buffer layer is SrTiO 3 The buffer layer has (111) crystal orientation, and the thin film layer is made of SrRuO 3 And the thin film layer has a (111) crystal orientation. The invention selects SrTiO with perovskite structure 3 (STO) as a buffer layer, which is stable in dielectric properties and lattice-matched to most perovskite oxides (lattice constant
) Meanwhile, STO can epitaxially grow on the surface of mica, and a flat (111) surface is provided, so that the high-quality growth of a monocrystalline film is facilitated, in addition, in the micro-nano processing process of the film, the mica is prevented from being directly etched, and unstable factors affecting the electrical transport performance test in the bending process are effectively reduced, so that the mica is a preferable buffer material.
Preferably, the thickness of the buffer layer is 5-100nm, and the thickness of the substrate layer is less than or equal to 50 μm. The STO buffer layer is not too thin, and the too thin layer is easy to cause the problems of uneven appearance, poor crystallization quality, small etching allowance and the like of the target film. The thinner the mica thickness is, the better the flexibility is, can place on the mould of bigger camber, but less than about 5 mu m adopt this method to peel off the thinning in the laboratory mechanically very easily to lead to mica cracked, in addition the stress that exerts on the film is proportional with mica thickness and camber, so thicker mica, also be favorable to stress to exert, but more than 50 mu m basically do not possess considerable flexible bending deformation.
In a specific embodiment, the growth temperature of the buffer layer is 300-900 ℃ and the growth temperature of the thin film layer is 300-900 ℃.
The embodiment of the invention also provides a preparation method of the oxide-based flexible micro-nano device, which comprises the following steps:
s1, depositing a buffer layer on a substrate layer by adopting a physical vapor deposition method, wherein the physical vapor deposition method is selected from one of a pulse laser deposition method, a magnetron sputtering method and a molecular beam epitaxy method, and when the pulse laser deposition method is selected, specific parameters are as follows: the temperature of the substrate is 800-900 ℃, and the energy density of the pulse laser is 1.2-1.4J/cm 2 The pulse laser frequency is 3-5Hz, firstly, a plurality of pulses are grown under the low oxygen pressure of 0.01mbar, and when the buffer layer is grown in 3D, the buffer layer is grown in two dimensions under the high oxygen pressure of 0.15 mbar;
s2, depositing a film layer on the buffer layer prepared in the step S1 by adopting a physical vapor deposition method, wherein the physical vapor deposition method is selected from one of a pulse laser deposition method, a magnetron sputtering method and a molecular beam epitaxy method, and when the pulse laser deposition method is selected, specific parameters are as follows: the substrate temperature is 650-750deg.C, oxygen gas pressure is 0.15mbar, and pulse laser energy density is 1.2-1.4J/cm 2 The pulse laser frequency is 1-3Hz;
s3, carrying out micro-nano processing on the film layer prepared in the step S2 to obtain a test pattern on the film layer;
s4, sticking and fixing the upper surface of the film layer by using a low-viscosity heat release adhesive tape, and stripping and thinning one side of the substrate layer far away from the film layer by adopting a scalpel cutting method or an adhesive tape thinning method to obtain an oxide-based flexible micro-nano device blank;
s5, performing heat release on the oxide-based flexible micro-nano device blank obtained in the step S4 at the temperature of 90-120 ℃ to obtain an oxide-based flexible micro-nano device semi-finished product;
and S6, packaging the upper surface and the lower surface of the semi-finished product of the oxide-based flexible micro-nano device prepared in the step S5 to obtain the oxide-based flexible micro-nano device.
The technical effects of the present invention will be described below with reference to specific examples.
Example 1
As shown in FIG. 5, the oxide-based flexible micro-nano device comprises a substrate layer, a buffer layer and a film layer which are sequentially arranged from bottom to top, wherein the substrate layer is made of monocrystalline mica, the buffer layer has a (111) crystal orientation, and the material of the buffer layer is SrTiO 3 The film layer has a (111) crystal orientation and is made of SrRuO 3 The thickness of the buffer layer is 15nm, and the thickness of the substrate layer is 10 mu m; as shown in fig. 4, the preparation method of the oxide-based flexible micro-nano device according to the embodiment of the invention comprises the following steps:
s1, preparing a STO buffer layer on a mica substrate by adopting a pulse laser deposition system, wherein the substrate temperature is 850 ℃, and the pulse laser energy density is 1.3J/cm 2 The pulse laser frequency is 4Hz, firstly, a plurality of pulses are grown under the low oxygen pressure of 0.01mbar, STO presents 3D growth (figure 1 a), but nucleation sites are provided for the subsequent growth of STO single crystals, then STO is grown in two dimensions under the high oxygen pressure of 0.15mbar (figure 1 b), and the obtained STO buffer layer has better flatness (figure 1 c) and crystallization quality (figure 3);
s2 preparation of SrRuO with a thickness of 20nm on the above STO buffer layer 3 (SRO) (111) monocrystalline film, the substrate temperature in the step of depositing the SRO film was 700 ℃, the oxygen gas pressure was 0.15mbar, and the energy density of the pulsed laser was 1.3J/cm 2 The pulse laser frequency was 2Hz, and the film had good surface morphology (fig. 2) and crystalline quality (fig. 3, SRO diffraction peak substantially coincident with STO due to lattice matching);
s3, carrying out micro-nano processing on the prepared single crystal SRO film with the [111] crystal orientation, and enabling the film to present a hall bar test pattern through the steps of ultraviolet exposure, argon ion etching, alignment, electron beam evaporation of a long Ti (10 nm) +Au (50 nm) electrode and the like, wherein a buffer layer provides a fault tolerance for the depth of the argon etching, and the problems of incomplete etching of the SRO film, microcracks of a mica substrate and the like are avoided. The electrode patterns are carefully designed, the electrode wiring positions are arranged on two sides of the mica edge, so that subsequent packaging and wiring procedures are convenient to carry out in a laboratory, in addition, micro-nano processing is arranged before a thinning process, the micro-nano processing of a thin and fragile sample is difficult, and in order to further reduce the difficulty, the sample can be further processed by sticking PI double faced adhesive tape on a Si sheet; s4, sticking and fixing the SRO side of the SRO/STO/mica sample by using a low-viscosity heat release adhesive tape, and peeling and thinning the back surface of the mica substrate by using mechanical means such as an adhesive tape or a surgical knife until the total thickness of the residual mica/film is about 10 mu m;
s5, placing the heat release adhesive tape and the SRO film to a proper heat release temperature of 120 ℃ for release, and taking down the film;
s6, packaging the two sides of the film by using a single-sided PI adhesive tape, wherein one side with the electrode is enabled to adopt a narrow adhesive tape to package a middle hall bar part and only expose the electrode wiring, and after packaging, the platinum wire and the conductive silver adhesive wiring are enabled to be used freely, so that the oxide-based flexible micro-nano device (figure 5) is obtained.
After the packaging, the sample can be freely bent, in the case, the sample is adhered to a die with different curvature radiuses by using double-sided adhesive tape for flexible transportation characterization, the abnormal Hall effect of the flexible SRO single crystal film under different bending is tested by using a low-temperature strong magnetic field system, so that the device can be stably transported and tested, the abnormal Hall effect of the device is obviously regulated (figure 6), and the size deviation of the component in the normal direction of each point on a hall bar is small due to the small size of the oxide-based flexible micro-nano device, for an applied parallel magnetic field along the out-of-plane, for example, the length is 150 mu m, the curvature radius is even larger than 2mm, the maximum direction of the magnetic field offset normal is 2.15 degrees, the magnetic field component is 99.93%, and more accurate measurement can be ensured.
Example 2
And the actual onesEmbodiment 1 differs only in that the material of the buffer layer in this embodiment is SrTiO 3 The material of the film layer is SrIrO 3 Other components are the same as those in embodiment 1, and will not be described here again.
Example 3
The difference from example 1 is only that the material of the buffer layer in this example is BaTiO 3 The material of the film layer is SrIrO 3 Other components are the same as those in embodiment 1, and will not be described here again.
Example 4
The difference from example 1 is that the material of the buffer layer in this example is SrCoO 3 The film layer is made of SrRuO 3 Other components are the same as those in embodiment 1, and will not be described here again.
Compared with the prior art, the oxide-based flexible micro-nano device provided by the invention uses the oxide as the buffer layer, can provide a (111) surface with ordered crystal lattice and flat surface, is beneficial to high-quality growth of a single crystal film, and in addition, in the micro-nano processing process of the film, the direct etching of mica is avoided, and unstable factors such as cracks affecting the electrical transport performance test in the bending process are effectively reduced.
Although the present disclosure is disclosed above, the scope of the present disclosure is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the disclosure, and these changes and modifications will fall within the scope of the invention.
Claims (10)
1. The oxide-based flexible micro-nano device is characterized by comprising a substrate layer, a buffer layer and a film layer which are sequentially arranged from bottom to top, wherein the substrate layer is made of monocrystalline mica, and the buffer layer is made of SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 One of the materials of the film layer is selected from SrTiO 3 、SrRuO 3 、SrIrO 3 、SrCoO 3 、BaTiO 3 、MgO、HfO 2 、Al 2 O 3 One of them.
2. The oxide-based flexible micro-nano device according to claim 1, wherein the material of the buffer layer is SrTiO 3 The buffer layer has a (111) crystal orientation, and the thin film layer is made of SrRuO 3 And the thin film layer has a (111) crystal orientation.
3. The oxide-based flexible micro-nano device according to claim 1 or 2, wherein the thickness of the substrate layer is less than or equal to 50 μm, the thickness of the buffer layer is 10-100nm, and the thickness of the thin film layer is less than or equal to 1 μm.
4. The oxide-based flexible micro-nano device according to claim 1 or 2, wherein the growth temperature of the buffer layer is 300-900 ℃, and the growth temperature of the thin film layer is 300-900 ℃.
5. A method for preparing the oxide-based flexible micro-nano device according to any one of claims 1-4, wherein the preparation method specifically comprises the following steps:
s1, depositing a buffer layer on a substrate layer by adopting a pulse laser deposition method;
s2, depositing a film layer on the buffer layer prepared in the step S1 by adopting a pulse laser deposition method;
s3, carrying out micro-nano processing on the film layer prepared in the step S2 to obtain a test pattern on the film layer;
s4, stripping and thinning the substrate layer in the step S3 to obtain an oxide-based flexible micro-nano device blank;
s5, performing heat release on the oxide-based flexible micro-nano device blank obtained in the step S4 to obtain an oxide-based flexible micro-nano device semi-finished product;
and S6, packaging the upper surface and the lower surface of the semi-finished product of the oxide-based flexible micro-nano device prepared in the step S5 to obtain the oxide-based flexible micro-nano device.
6. The method for manufacturing an oxide-based flexible micro-nano device according to claim 5, wherein in the step S1 or the step S2, the pulsed laser deposition method is selected from one of a pulsed laser deposition method, a magnetron sputtering method, a molecular beam epitaxy method, and a physical vapor deposition method.
7. The method for preparing an oxide-based flexible micro-nano device according to claim 6, wherein specific parameters of the pulsed laser deposition are as follows: the temperature of the substrate is 800-900 ℃, and the energy density of the pulse laser is 1.2-1.4J/cm 2 The pulse laser frequency is 3-5Hz, firstly, a plurality of pulses are grown under the low oxygen pressure of 0.01mbar, and when the buffer layer is grown in 3D, the buffer layer is grown in two dimensions under the high oxygen pressure of 0.15 mbar.
8. The method for preparing an oxide-based flexible micro-nano device according to claim 5, wherein in the step S2, specific parameters of the pulsed laser deposition are as follows: the substrate temperature is 650-750deg.C, oxygen gas pressure is 0.15mbar, and pulse laser energy density is 1.2-1.4J/cm 2 The pulse laser frequency is 1-3Hz.
9. The method for manufacturing an oxide-based flexible micro-nano device according to claim 5, wherein in the step S4, the specific steps of peeling and thinning are as follows: and (3) using a low-viscosity heat release adhesive tape to paste and fix the upper surface of the film layer, and stripping and thinning the side, far away from the film layer, of the substrate layer by adopting a surgical knife cutting method or an adhesive tape thinning method.
10. The method of manufacturing an oxide-based flexible micro-nano device according to claim 5, wherein the heat release temperature is 90-120 ℃ in step S5.
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