CN116259633A - 阵列基板和显示面板 - Google Patents
阵列基板和显示面板 Download PDFInfo
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1685—Operation of cells; Circuit arrangements affecting the entire cell
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
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- G02F1/16753—Structures for supporting or mounting cells, e.g. frames or bezels
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
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- G02F1/16755—Substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
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- G02F1/16756—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
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- G02F1/1676—Electrodes
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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Abstract
本申请提供了一种阵列基板和显示面板。阵列基板包括衬底以及依次形成于衬底一侧的薄膜晶体管、第一绝缘层、平坦层、金属导电层和透明电极层;第一绝缘层和平坦层覆盖薄膜晶体管;金属导电层形成金属反射层;第一绝缘层具有覆盖薄膜晶体管的沟道区的暴露部;平坦层上设置通孔,以至少部分裸露暴露部;通孔内设置有与薄膜晶体管的栅极电连接的导电层,导电层包括金属遮光层和/或透明导电层,且覆盖暴露部。通过将沟道区上方的平坦层进行挖孔处理,避免平坦层对沟道区进行遮挡,以对薄膜晶体管的性能产生影响,进而避免拖尾现象;同时,在沟道区上方设置与栅极电连接的导电层,以形成双栅极结构,进而提升薄膜晶体管的性能。
Description
技术领域
本申请涉及显示技术领域,特别是涉及一种阵列基板和显示面板。
背景技术
电子纸显示技术(E-paper)是一种“微胶囊电泳显示”(ElectrophoresisDisplay,EPD)技术,其显示效果接近自然纸张效果,免于阅读疲劳。电子纸应用广泛,含消费类、工业类、智能家居、智慧医疗等。
电子纸作为电子阅读器时,容易出现“拖尾”现象,即在画面切换刷新过程中出现明显的切换痕迹,其主要为寄生电容和TFT(薄膜晶体管)漏电流造成。而为了减小寄生电容,业界均采用比较厚的有机材料来做电容介质,但在阵列基板制程中,TFT正上方的有机材料会引起TFT漏电流明显增加,导致明显的拖尾;另一方面,TFT在开态电流不够大的情况下,需增加TFT的宽度来保证足够的开态电流,但会影响TFT背板的平面空间,使存储电容减小或牺牲电子显示器的分辨率。
发明内容
本申请主要解决的技术问题是提供一种阵列基板和显示面板,解决现有技术中在画面切换刷新过程中出现明显的切换痕迹的问题。
为了解决上述技术问题,本申请提供的第一个技术方案为:提供一种阵列基板,其中,所述阵列基板包括:
衬底以及依次形成于所述衬底一侧的薄膜晶体管、第一绝缘层、平坦层、金属导电层和透明电极层;所述第一绝缘层和所述平坦层均覆盖所述薄膜晶体管;所述金属导电层形成金属反射层;所述透明电极层形成像素电极;
其中,所述第一绝缘层具有覆盖所述薄膜晶体管的沟道区的暴露部;所述平坦层上设置有通孔,以至少部分裸露所述暴露部;所述通孔内设置有与所述薄膜晶体管的栅极电连接的导电层,所述导电层包括金属遮光层和/或透明导电层,且覆盖所述暴露部。
其中,在垂直于所述衬底的方向上,所述薄膜晶体管的有源层均未与所述薄膜晶体管的源极和漏极重叠的部分定义为沟道区;所述暴露部位于所述源极和所述漏极之间,且完全覆盖所述沟道区。
其中,所述通孔为缩口结构,在朝向所述衬底的方向上,所述通孔的横截面积逐渐减小;所述通孔具有相对设置的第一孔口和第二孔口,所述第一孔口的横截面积大于所述第二孔口的横截面积;所述第一孔口在所述暴露部上的正投影位于所述暴露部内。
其中,所述导电层位于所述通孔的第二孔口,且覆盖所述第二孔口。
其中,所述薄膜晶体管为底栅结构。
其中,所述金属反射层设置于所述平坦层远离所述衬底的一侧表面,且所述像素电极覆盖所述金属反射层。
其中,所述导电层与所述像素电极绝缘设置,且与所述金属反射层绝缘设置。
其中,所述导电层包括所述金属遮光层,所述金属遮光层形成于所述金属导电层,且与所述栅极电连接;
或,所述导电层包括所述透明导电层,所述透明导电层形成于所述透明电极层,且与所述栅极电连接;
或,所述导电层包括所述金属遮光层和所述透明导电层,所述透明导电层设置于所述金属遮光层远离所述衬底的一侧,且覆盖所述金属遮光层。
其中,还包括第二绝缘层,所述第二绝缘层设置于所述通孔内且覆盖所述导电层。
为了解决上述技术问题,本申请提供的第二个技术方案为:提供一种显示面板,其中,所述显示面板包括上述的阵列基板。
本申请的有益效果:区别于现有技术,本申请提供了一种阵列基板和显示面板,阵列基板包括衬底以及依次形成于衬底一侧的薄膜晶体管、第一绝缘层、平坦层、金属导电层和透明电极层;第一绝缘层和平坦层均覆盖薄膜晶体管;金属导电层形成金属反射层;透明电极层形成像素电极;其中,第一绝缘层具有覆盖薄膜晶体管的沟道区的暴露部;平坦层上设置有通孔,以至少部分裸露暴露部;通孔内设置有与薄膜晶体管的栅极电连接的导电层,导电层包括金属遮光层和/或透明导电层,且覆盖暴露部。通过将沟道区上方的平坦层进行挖孔处理,避免平坦层对沟道区进行遮挡,以对薄膜晶体管的性能产生影响,进而避免拖尾现象;同时,在沟道区上方设置与栅极电连接的导电层,以形成双栅极结构,进而提升薄膜晶体管的性能。
附图说明
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出任何创造性劳动的前提下,还可以根据这些附图获得其它的附图。
图1是本申请提供的阵列基板第一实施例的结构示意图;
图2是本申请提供的阵列基板第二实施例的结构示意图;
图3是本申请提供的阵列基板第三实施例的结构示意图;
图4是本申请提供的阵列基板第四实施例的结构示意图;
图5是本申请提供的阵列基板第五实施例的结构示意图;
图6是本申请提供的阵列基板第六实施例的结构示意图。
附图标号说明:
阵列基板-100、衬底-10、薄膜晶体管-20、有源层-21、沟道区-210、欧姆接触层-22、第一绝缘层-30、暴露部-31、平坦层-40、通孔-41、第一孔口-411、第二孔口-412、金属导电层-50、金属反射层-51、透明电极层-60、像素电极-61、导电层-70、金属遮光层-71、透明导电层-72、第二绝缘层-80、第一金属层-101、栅极-23、栅极绝缘层-102、第二金属层-103、源极-24、漏极-25。
具体实施方式
下面结合说明书附图,对本申请实施例的方案进行详细说明。
以下描述中,为了说明而不是为了限定,提出了诸如特定系统结构、接口、技术之类的具体细节,以便透彻理解本申请。
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
本申请中的术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。此外,术语“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元,而是可选地还包括没有列出的步骤或单元,或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。
在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。
请参阅图1,图1是本申请提供的阵列基板第一实施例的结构示意图。
本申请提供一种阵列基板100,阵列基板100包括衬底10以及依次形成于衬底10一侧的薄膜晶体管20、第一绝缘层30、平坦层40、金属导电层50和透明电极层60。第一绝缘层30和平坦层40均覆盖薄膜晶体管20和衬底10。
第一绝缘层30可以为氮化硅、二氧化硅等无机绝缘材料,此处不作限制,根据实际需求进行选择。
平坦层40的厚度大于第一绝缘层30的厚度。平坦层40可以为PFA(Polymer Filmon Array,有机高分子膜)等有机绝缘材料,此处不作限制,根据实际需求进行选择。
金属导电层50形成金属反射层51,用于反射照射至金属反射层51的外界环境光。金属反射层51设置于平坦层40远离衬底10的一侧表面。
透明电极层60形成像素电极61,像素电极61覆盖金属反射层51,以保护金属反射层51免受电泳液的侵蚀。透明电极层60的材料为氧化铟锡(Indium Tin Oxide,ITO),也可以为其他透明导电材料,此处不作限制,根据实际需求进行选择。
薄膜晶体管20为底栅结构。具体地,阵列基板100还包括依次层叠设置的第一金属层101、栅极绝缘层102、第二金属层103。其中,第一金属层101设置于衬底10的一侧表面,第二金属层103设置于第一绝缘层30靠近衬底10的一侧,且第一绝缘层30覆盖第二金属层103。
第一金属层101形成扫描线(图未示)、基板公共电极走线(图未示)和薄膜晶体管20的栅极23。
第二金属层103形成数据线(图未示)、薄膜晶体管20的源极24和漏极25。
薄膜晶体管20还包括有源层21。有源层21设置于栅极绝缘层102与第二金属层103之间,且对应栅极23设置。有源层21远离衬底10的一侧设置有两个间隔设置的欧姆接触层22。一个欧姆接触层22对应源极24设置且位于源极24与有源层21之间,另一个欧姆接触层22对应漏极25设置且位于漏极25与有源层21之间。
薄膜晶体管20作为显示面板中的开关器件,薄膜晶体管20的栅极23连接显示面板的扫描线,经由扫描线连接至栅极扫描电路(图未示)。薄膜晶体管20的源极24连接数据线,经由数据线连接至驱动芯片(图未示)或柔性线路板(图未示)。薄膜晶体管20的漏极25连接至像素电极61,通过数据线加载电压至像素电极61,基板公共电极走线连接至公共电极(图未示),使得像素电极61与公共电极之间形成电场,以驱动电泳液中的电泳粒子运动。
进一步地,第一绝缘层30具有覆盖薄膜晶体管20的沟道区210的暴露部31。平坦层40上设置有通孔41,以至少部分裸露暴露部31。
具体地,在垂直于衬底10的方向上,薄膜晶体管20的有源层21均未与薄膜晶体管20的源极24和漏极25重叠的部分定义为沟道区210。暴露部31位于源极24和漏极25之间,且完全覆盖沟道区210。即,在平行于衬底10的方向上,暴露部31分别与源极24和漏极25错位设置。其次,暴露部31覆盖沟道区210,且暴露部31的横截面积大于或等于沟道区210的横截面积。暴露部31与源极24或漏极25重叠设置,使得平坦层40未完全遮光源极24和漏极25,平坦层40的横截面积减小,不能更好的保护源极24和漏极25;其次,由于金属反射层51设置于平坦层40远离衬底10的一侧表面,金属反射层51的面积也会跟着减小,会减小照射至阵列基板100的外界环境光的利用率。
在本实施例中,暴露部31覆盖沟道区210,且暴露部31的横截面积大于沟道区210的横截面积,便于后续通孔41的设置,以避免平坦层40对沟道区210进行遮挡,进而对薄膜晶体管20的性能产生影响。
通孔41在暴露部31上的正投影位于暴露部31内。也就是说,通孔41在平行于衬底10的方向上的最大横截面积小于或等于暴露部31的横截面积。该设计方式,保证沟道区210上方的平坦层40在不影响薄膜晶体管20的性能的情况下,使得金属反射层51的面积尽可能的大,能更多的反射外界环境光,提升外界环境光的利用率,有效提升显示面板的显示效果。
通孔41具有沿垂直于衬底10的方向上相对设置的第一孔口411和第二孔口412。定义第一孔口411位于通孔41远离衬底10的一端,第二孔口412位于通孔41靠近衬底10的一端。通孔41可以为矩形孔、圆柱孔或锥孔,也可以为其他不规则结构,此处不作限制,根据实际需求进行选择。
第一孔口411的横截面积等于第二孔口412的横截面积时,通孔41为直通孔,在朝向衬底10的方向上,通孔41的横截面积不变。第一孔口411的横截面积大于第二孔口412的横截面积时,通孔41为缩口结构,在朝向衬底10的方向上,通孔41的横截面积逐渐减小。
在本实施例中,通孔41为缩口结构,便于制备通孔41,且便于后续导电层70的制备。第一孔口411的横截面积大于第二孔口412的横截面积。第一孔口411在暴露部31上的正投影位于暴露部31内。
更近一步地,通孔41内设置有与薄膜晶体管20的栅极23电连接的导电层70。导电层70与像素电极61绝缘设置,且与金属反射层51绝缘设置。导电层70可以与栅极23通过过孔引线连接,也可以采用其他方式电连接,此处不作限制,根据实际需求进行选择。
具体地,导电层70位于通孔41的第二孔口412,且覆盖第二孔口412。平坦层40具有一定高度,使得第一孔口411和第二孔口412具有高度差。导电层70位于通孔41的第二孔口412,且导电层70的厚度小于平坦层40的厚度的一半,以及第一孔口411靠近像素电极61和金属反射层51设置,使得导电层70可以分别与像素电极61和金属反射层51绝缘设置,结构设计简单。此处对平坦层40的高度不作限制,根据实际需求进行选择。应当可以理解,导电层70的横截面积也可以小于第二孔口412的面积,即,导电层70也可以不完全覆盖第二孔口412。
第二孔口412在有源层21上的正投影与沟道区210至少部分重叠,以保证导电层70在垂直于衬底10的方向上可以与沟道区210至少部分重叠。
导电层70与栅极23电连接,使得薄膜晶体管20可以由底栅结构变为双栅结构,通过双栅结构能够提高薄膜晶体管20的稳定性,提高薄膜晶体管20的电子迁移率,获得更高的开态电流。同时,在保证相同的开态电流时,能减小薄膜晶体管20的宽度,进而增大存储电容以及提升显示面板的分辨率。
更进一步地,导电层70包括金属遮光层71和/或透明导电层72(如图2所示),且覆盖暴露部31。
在一实施例中,导电层70包括金属遮光层71,金属遮光层71与栅极23连接,以形成双栅结构。金属遮光层71覆盖沟道区210,避免沟道区210受光照影响薄膜晶体管20的性能。金属遮光层71的材料可以与金属导电层50的材料相同,也可以不相同,此处不作限制,根据实际需求进行选择。
在另一实施例中,导电层70包括透明导电层72,透明导电层72与栅极23连接,以形成双栅结构。透明导电层72的材料可以与透明电极层60的材料相同,也可以不同,此处不作限制,根据实际需求进行选择。
在又一实施例中,导电层70包括金属遮光层71和透明导电层72。透明导电层72设置于金属遮光层71远离衬底10的一侧,且覆盖金属遮光层71,以保护金属遮光层71。金属遮光层71与栅极23连接,金属遮光层71与透明导电层72接触设置,使得金属遮光层71和透明导电层72共同形成双栅结构的另一个栅极23。
应当可以理解,在其他实施例中,透明导电层72也可以不完全覆盖金属遮光层71。导电层70包括金属遮光层71和透明导电层72时,可以透明导电层72与栅极23连接,也可以金属遮光层71和透明导电层72分别与栅极23连接。
在一实施例中,阵列基板100还包括第二绝缘层80,第二绝缘层80设置于通孔41内且覆盖导电层70,以对导电层70进行绝缘保护。第二绝缘层80的材料与平坦层40的材料不相同,第二绝缘层80为无机绝缘层。第二绝缘层80的厚度小于平坦层40的厚度,且第二绝缘层80远离衬底10一侧表面的高度小于第一孔口411的高度,以保护薄膜晶体管20的性能不受影响。第二绝缘层80的材料可以与第一绝缘层30的材料相同,也可以不同,此处不作限制,根据实际需求进行选择。
在本实施例中,导电层70包括金属遮光层71,金属遮光层71形成于金属导电层50,且与栅极23连接。金属遮光层71完全覆盖第二孔口412,且金属遮光层71在有源层21上的正投影位于沟道区210内。金属遮光层71与金属反射层51通过同一金属导电层50图案化形成,可以简化制备工艺;其次,金属遮光层71还可以起到遮光作用,以保护薄膜晶体管20的沟道区210免受光照影响。
请参阅图1和图2,图2是本申请提供的阵列基板第二实施例的结构示意图。
本申请提供的阵列基板100第二实施例与本申请提供的阵列基板100第一实施例的结构基本相同,不同之处在于:导电层70包括透明导电层72。
在本实施例中,导电层70包括透明导电层72,透明导电层72形成于透明电极层60,且与栅极23连接。透明导电层72完全覆盖第二孔口412,且透明导电层72在有源层21上的正投影位于沟道区210内。透明导电层72与像素电极61通过同一透明电极层60图案化形成,可以简化制备工艺。
请参阅图1和图3,图3是本申请提供的阵列基板第三实施例的结构示意图。
本申请提供的阵列基板100第三实施例与本申请提供的阵列基板100第一实施例的结构基本相同,不同之处在于:导电层70包括金属遮光层71和透明导电层72。
在本实施例中,导电层70包括金属遮光层71和透明导电层72,金属遮光层71形成于金属导电层50,透明导电层72形成于透明电极层60,该设计方式,可以简化制备工艺。
请参阅图1和图4,图4是本申请提供的阵列基板第四实施例的结构示意图。
本申请提供的阵列基板100第四实施例与本申请提供的阵列基板100第一实施例的结构基本相同,不同之处在于:阵列基板100还包括第二绝缘层80。
在本实施例中,导电层70包括金属遮光层71,金属遮光层71形成于金属导电层50。第二绝缘层80设置于通孔41内,且位于金属遮光层71远离衬底10的一侧。第二绝缘层80覆盖金属遮光层71,以对金属遮光层71进行绝缘和保护。第二绝缘层80的材料与第一绝缘层30的材料相同,且第二绝缘层80的厚度与第一绝缘层30的厚度相同。
请参阅图1至图6,图5是本申请提供的阵列基板第五实施例的结构示意图,图6是本申请提供的阵列基板第六实施例的结构示意图。
在其他实施例中,导电层70可以包括透明导电层72,透明导电层72形成于透明电极层60,且与栅极23连接。第二绝缘层80设置于通孔41内,且位于透明导电层72远离衬底10的一侧,并覆盖透明导电层72,以对透明导电层72进行保护。又或者,导电层70包括金属遮光层71和透明导电层72。透明导电层72设置于金属遮光层71远离衬底10的一侧,且覆盖金属遮光层71,以保护金属遮光层71。金属遮光层71与栅极23连接,金属遮光层71与透明导电层72接触设置。金属遮光层71形成于金属导电层50,透明导电层72形成于透明电极层60。第二绝缘层80设置于通孔41内,且位于透明导电层72远离衬底10的一侧,并覆盖透明导电层72,以对导电层70进行绝缘和保护。
本申请提供了一种阵列基板100,阵列基板100包括衬底10以及依次形成于衬底10一侧的薄膜晶体管20、第一绝缘层30、平坦层40、金属导电层50和透明电极层60;第一绝缘层30和平坦层40均覆盖薄膜晶体管20;金属导电层50形成金属反射层51;透明电极层60形成像素电极61;其中,第一绝缘层30具有覆盖薄膜晶体管20的沟道区210的暴露部31;平坦层40上设置有通孔41,以至少部分裸露暴露部31;通孔41内设置有与薄膜晶体管20的栅极23电连接的导电层70,导电层70包括金属遮光层71和/或透明导电层72,且覆盖暴露部31。通过将沟道区210上方的平坦层40进行挖孔处理,避免平坦层40对沟道区210进行遮挡,以对薄膜晶体管20的性能产生影响,进而避免拖尾现象;同时,在沟道区210上方设置与栅极23连接的导电层70,以形成双栅极23结构,进而提升薄膜晶体管20的性能。
本申请还提供一种显示面板,显示面板应用于电泳显示装置。显示面板包括上述的阵列基板100。显示面板可以是电子纸(E-paper)。
以上仅为本申请的实施方式,并非因此限制本申请的专利保护范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。
Claims (10)
1.一种阵列基板,所述阵列基板包括:
衬底以及依次形成于所述衬底一侧的薄膜晶体管、第一绝缘层、平坦层、金属导电层和透明电极层;所述第一绝缘层和所述平坦层均覆盖所述薄膜晶体管;所述金属导电层形成金属反射层;所述透明电极层形成像素电极;
其特征在于,所述第一绝缘层具有覆盖所述薄膜晶体管的沟道区的暴露部;所述平坦层上设置有通孔,以至少部分裸露所述暴露部;所述通孔内设置有与所述薄膜晶体管的栅极电连接的导电层,所述导电层包括金属遮光层和/或透明导电层,且覆盖所述暴露部。
2.根据权利要求1所述的阵列基板,其特征在于,在垂直于所述衬底的方向上,所述薄膜晶体管的有源层均未与所述薄膜晶体管的源极和漏极重叠的部分定义为沟道区;所述暴露部位于所述源极和所述漏极之间,且完全覆盖所述沟道区。
3.根据权利要求2所述的阵列基板,其特征在于,所述通孔为缩口结构,在朝向所述衬底的方向上,所述通孔的横截面积逐渐减小;所述通孔具有相对设置的第一孔口和第二孔口,所述第一孔口的横截面积大于所述第二孔口的横截面积;所述第一孔口在所述暴露部上的正投影位于所述暴露部内。
4.根据权利要求3所述的阵列基板,其特征在于,所述导电层位于所述通孔的第二孔口,且覆盖所述第二孔口。
5.根据权利要求1所述的阵列基板,其特征在于,所述薄膜晶体管为底栅结构。
6.根据权利要求5所述的阵列基板,其特征在于,所述金属反射层设置于所述平坦层远离所述衬底的一侧表面,且所述像素电极覆盖所述金属反射层。
7.根据权利要求6所述的阵列基板,其特征在于,所述导电层与所述像素电极绝缘设置,且与所述金属反射层绝缘设置。
8.根据权利要求6所述的阵列基板,其特征在于,所述导电层包括所述金属遮光层,所述金属遮光层形成于所述金属导电层,且与所述栅极电连接;
或,所述导电层包括所述透明导电层,所述透明导电层形成于所述透明电极层,且与所述栅极电连接;
或,所述导电层包括所述金属遮光层和所述透明导电层,所述透明导电层设置于所述金属遮光层远离所述衬底的一侧,且覆盖所述金属遮光层。
9.根据权利要求1所述的阵列基板,其特征在于,还包括第二绝缘层,所述第二绝缘层设置于所述通孔内且覆盖所述导电层。
10.一种显示面板,其特征在于,所述显示面板包括权利要求1至9中任一项所述的阵列基板。
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