CN116256889A - MEMS scanning mirror and preparation method thereof - Google Patents
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- CN116256889A CN116256889A CN202111504484.XA CN202111504484A CN116256889A CN 116256889 A CN116256889 A CN 116256889A CN 202111504484 A CN202111504484 A CN 202111504484A CN 116256889 A CN116256889 A CN 116256889A
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
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Abstract
The embodiment of the disclosure relates to the technical field of micro-electromechanical systems, and provides a micro-electromechanical system MEMS scanning mirror and a preparation method thereof, wherein the method comprises the following steps: a mirror; a drive module, comprising: the device comprises a fixed beam with fixed position, a rotating beam capable of rotating around a shaft and a connecting piece; the fixed beam is provided with first comb teeth; the rotating beam is provided with second comb teeth; the first comb teeth are formed on the first film layer, and the second comb teeth are formed on the second film layer; the first comb teeth and the second comb teeth can drive the rotating beam to swing under the action of a driving signal; the connecting piece is connected with the mirror and the rotating beam; the swinging rotating beam can drive the mirror to rotate through the connecting piece. In the embodiment of the disclosure, on one hand, film layers with different thicknesses can be adopted for processing according to the height requirements of the comb teeth, so that the dimensional consistency of the film layers is improved; on the other hand, the etching barrier layer can be arranged in the preparation process, so that the speed and time for etching silicon do not need to be accurately controlled, the preparation efficiency of the chip is improved, and the method is suitable for large-scale mass production.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to a micro-electromechanical system MEMS scanning mirror and a preparation method thereof.
Background
Microelectromechanical system (MEMS, micro-Electro-Mechanical System) scanning mirrors are optical devices that integrate Micro-mirror and MEMS drivers together based on MEMS technology. The micro-light reflecting mirror can realize translational movement or pivoting of the micro-light reflecting mirror in one-dimensional or two-dimensional directions under the action of the MEMS driver.
In the related art, the production process of the MEMS scanning mirror is complex and the processing efficiency is low, so that it is difficult to realize mass production. Moreover, the MEMS produced has poor dimensional uniformity.
Disclosure of Invention
The embodiment of the invention provides a micro-electromechanical system (MEMS) scanning mirror and a preparation method thereof.
A first aspect of an embodiment of the present disclosure provides a microelectromechanical system MEMS scanning mirror, comprising:
a mirror;
a drive module, comprising: the device comprises a fixed beam with fixed position, a rotating beam capable of rotating around a shaft and a connecting piece;
the fixed beam is provided with first comb teeth; the rotating beam is provided with second comb teeth; the first comb teeth are formed on the first film layer, and the second comb teeth are formed on the second film layer; the first comb teeth and the second comb teeth can drive the rotating beam to swing under the action of a driving signal;
the connecting piece connects the mirror and the rotating beam; the swinging rotating beam can drive the reflecting mirror to rotate through the connecting piece; the connecting piece comprises a connecting rod and a hinge connected with the connecting rod; the mirror, the link and/or the hinge each comprise an upper portion and a lower portion; the upper part is formed on the second film layer; the lower portion is formed in the first film layer.
In one embodiment, the first film layer and the second film layer are the same material and/or thickness.
In one embodiment, the drive module includes a plurality of stacked membrane layers; the plurality of stacked film layers includes: the first film layer, the second film layer and the bonding layer arranged between the first film layer and the second film layer.
In one embodiment, the upper portion of the mirror is a mirror surface, the mirror surface being molded to the second film layer; and/or the lower part of the mirror is provided with a mirror surface reinforcing rib, and the mirror surface reinforcing rib is formed on the first film layer and the bonding layer; and/or the connecting rod and/or the hinge are/is formed on the first film layer, the second film layer and the bonding layer.
A second aspect of an embodiment of the present disclosure provides a method for manufacturing a MEMS scanning mirror, including:
etching first comb teeth, the lower part of a connecting rod, the lower part of a hinge and/or mirror reinforcing ribs on a first film layer of a first wafer, wherein the first wafer comprises the first film layer and a first etching blocking layer adjacent to one surface of the first film layer;
bonding a second wafer and the first wafer on the other surface of the first film layer, wherein the second wafer comprises a second film layer, a second etching barrier layer adjacent to one surface of the second film layer and a bonding layer adjacent to the other surface of the second film layer;
and etching second comb teeth, the upper parts of the connecting rods, the upper parts of the hinges and/or the mirror surface on the second film layer of the second wafer.
In one embodiment, the method further comprises:
after bonding the second wafer to the first wafer on the other surface of the first film layer, the method further includes:
annealing at a first predetermined temperature;
stopping annealing after a preset time period, and cooling to a second preset temperature according to a preset cooling speed.
In one embodiment, after bonding the second wafer to the first wafer on the other surface of the first film layer, the method further comprises:
removing the substrate layer and/or the second etching barrier layer on the second wafer by utilizing a wet etching process;
and/or the number of the groups of groups,
removing SiO between the first comb teeth and/or the second comb teeth by adopting a wet etching process 2 。
In one embodiment, the first wafer includes a substrate layer; the method further comprises the steps of:
etching a partial region of the substrate layer;
bonding a support sheet to the substrate layer;
surface treatment is carried out on the bonding pad and/or the mirror surface area;
and removing the supporting sheet after finishing the surface treatment.
In one embodiment, the surface treatment of the pad and/or the mirror region includes:
sputtering and/or evaporating metal on the area corresponding to the surface bonding pad on the second film layer, wherein the metal comprises Ti and/or Al;
and/or the number of the groups of groups,
annealing the surface pad at a third predetermined temperature of the vacuum environment to form an ohmic contact;
and/or the number of the groups of groups,
and sputtering and/or evaporating metal on the mirror surface area of the upper surface of the second film layer after annealing, wherein the metal comprises Ti and/or Al.
A third aspect of the disclosed embodiments provides a lidar comprising any of the MEMS scanning mirrors of the disclosed embodiments.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the beneficial effects that:
in the embodiment of the disclosure, the fixed beam is provided with first comb teeth; the rotating beam is provided with second comb teeth; the first comb teeth are formed on the first film layer, and the second comb teeth are formed on the second film layer. In this way, in the MEMS scanning mirror, since the first comb teeth and the second comb teeth are formed on different film layers, compared with the first comb teeth and the second comb teeth which are formed on the same film layer, on one hand, the processing can be performed by adopting film layers with different thicknesses according to the height requirements of the comb teeth, so that the dimensional consistency of the comb teeth is improved; on the other hand, an etching barrier layer can be arranged on the surface of the film layer in the preparation process, so that the speed and time for etching silicon do not need to be accurately controlled, the preparation efficiency of the chip is improved, and the method is suitable for large-scale mass production.
The connecting piece connects the mirror and the rotating beam; the swinging rotating beam can drive the mirror to rotate through the connecting piece; the connecting piece comprises a connecting rod and a hinge connected with the connecting rod; the mirror, the link and/or the hinge each comprise an upper portion and a lower portion; the upper part is formed on the second film layer; the lower portion is formed in the first film layer. Here, since the connecting member includes the link and the hinge connected with the link, the hinge can raise the swing amplitude of the connecting member, compared with the case where the connecting member includes only the link, thereby driving the free movement of the mirror, and making the movement of the mirror more sensitive.
Drawings
FIG. 1 is a schematic diagram of a MEMS scanning mirror according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a film structure of a MEMS scanning mirror according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a film structure of a MEMS scanning mirror according to an embodiment of the present invention.
Fig. 4 is a schematic flow chart of a method for manufacturing a MEMS scanning mirror according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of a film layer structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 8 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 9 is a schematic diagram of a film layer structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 10 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
FIG. 11 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 12 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 13 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 14 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
Fig. 15 is a schematic diagram of a film structure in a MEMS scanning mirror manufacturing process according to an embodiment of the present invention.
FIG. 16 is a schematic diagram of a film structure during the fabrication of a MEMS scanning mirror according to an embodiment of the present invention.
FIG. 17 is a schematic flow chart of a method for fabricating a MEMS scanning mirror according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
For a better understanding of the disclosed embodiments, MEMS are described below by way of some embodiments:
in some embodiments, the MEMS scanning mirror is driven in a manner that includes electrostatic, piezoelectric, electromagnetic, and thermoelectric driving. The MEMS scanning mirror driven by static electricity has the advantages of small volume, low power consumption, high reliability, quasi-static operation and the like, and is widely applied to the fields of head-mounted display equipment, laser radar, augmented reality and the like. However, the driving force is smaller in electrostatic driving compared with other driving modes, so that the deflection angle of most MEMS scanning mirrors is smaller or only can work in a resonance state, which limits the applicable scenes of the scanning mirrors.
In one embodiment, a frameless electrostatic MEMS scanning mirror is provided that has a mirror surface that rotates in a direction perpendicular to the drive axis, unlike most electrostatic MEMS scanning mirrors, which are connected by a linkage and flexible hinge. The connecting rod and the flexible hinge form a lever-like structure, and the rotating angle of the mirror surface can be increased by increasing the length of the connecting rod. In the driving structure, the electrostatic comb teeth are designed into high comb teeth and low comb teeth, so that the mirror surface can still deflect even under direct current driving, and the quasi-static work of the scanning mirror is realized. The advantages of large rotation angle and quasi-static operation greatly improve the applicable scene of the scanning mirror. However, the MEMS scanning mirror chip has a problem of serious productivity shortage. The reason is that the film layer structure design of the scanning mirror chip designs the structures such as the high comb teeth, the low comb teeth, the connecting rod, the flexible hinge, the mirror surface and the like of the scanning mirror on the same silicon layer, so that the etching rate and the etching time of silicon and silicon oxide are required to be accurately controlled in the chip preparation process, the chip preparation process is complex, the processing efficiency is low, and the large-scale mass production is difficult.
In one embodiment, the height of the comb teeth is controlled by mechanical thinning and/or dry etching, and the two processes have certain intra-chip and inter-chip non-uniformity, which results in inconsistent comb tooth heights of different chips, and the consistency of key characteristics of the scanning mirror, such as parameters of resonant frequency, rotation angle, and the like, is poor, so that the chips need to be individually corrected, which results in great difficulty and long period of development of a back-end user.
In order to illustrate the technical scheme of the invention, the following description is made by specific examples.
As shown in fig. 1 and 2, embodiments of the present disclosure provide a microelectromechanical system MEMS scanning mirror, comprising:
a mirror 107;
a drive module, comprising: fixed beams (113, 115, and 117), pivotable beams 109, and connectors (which may include 105 and 122);
the fixed beams (113, 115 and 117) are provided with first comb teeth 112; the rotating beam 109 is provided with second comb teeth 111; the first comb teeth 112 are formed on the first film layer (e.g. B of fig. 2), and the second comb teeth 111 are formed on the second film layer (e.g. a of fig. 2); the first comb teeth 112 and the second comb teeth 111 can drive the rotation beam 109 to swing under the action of a driving signal;
the connection connects the mirror 107 and the rotating beam 109; the swinging rotating beam 109 can drive the mirror 107 to rotate through the connecting piece; the connecting piece comprises connecting rods (105 and 122) and hinges (106 and 108) connected with the connecting rods; the mirror 107, the links (105 and 122) and/or the hinges (106 and 108) each comprise an upper portion and a lower portion; the upper part is formed on the second film layer B; the lower part is formed on the first film layer A.
In one embodiment, the first film B on which the first teeth 112 are formed and the second film a on which the second teeth 111 are formed are not the same film.
In one scene embodiment, the MEMS scanning mirror may be applied in a lidar. The lidar may detect the position, speed, etc. characteristic quantities of the target object based on the MEMS scanning mirror and by emitting a laser beam. Illustratively, the lidar is composed of a transmitting system, a receiving system, a scanning system, etc., to which the MEMS scanning mirror may be applied.
In one embodiment, the MEMS scanning mirror may be an electrostatic MEMS scanning mirror, please refer again to fig. 1, which is a top view of an electrostatic MEMS scanning mirror, which in the present disclosure may be referred to as a MEMS scanning mirror chip. The MEMS scanning mirror chip may include drive modules (101, 102, 103, and 104), mirrors 107, and connections. It should be noted that one or more of the driving module, the reflecting mirror, and the connecting piece may be etched based on a film layer, which is not limited herein. Here, the film layer may be a Si device layer.
In some embodiments, the connector may also be an assembly including links (105 and 122) and flexible hinges (106 and 108), without limitation.
In one embodiment, the drive module may include comb teeth, a rotating beam 109, a rotating shaft 110, a fixed anchor 119, fixed beams (113, 115, and 117), and metal pads (114, 116, 118, 120, and 121). Wherein the comb teeth include the first comb teeth 112 and the second comb teeth 111; it should be noted that the first comb teeth 112 and the second comb teeth 111 may be formed in pairs. The first comb teeth 112 and the second comb teeth 111 may be spatially parallel staggered. In the embodiment of the present disclosure, the number, shape, and/or positional relationship of the first comb teeth 112 and the second comb teeth 111 are not limited.
In one embodiment, the comb teeth formed on the rotating beam 109 are second comb teeth 111, which may also be referred to as moving teeth. The comb teeth formed on the fixing beams (113, 115 and 117) are first comb teeth 112, which may also be called fixed teeth. Wherein the rotating beam 109 and the fixed beams (113, 115, and 117) may be disposed in parallel.
In one embodiment, by applying voltages to the metal pads (114, 116, 118, and 121), respectively (the metal pad 120 may be grounded), the second comb teeth 111 are attracted by the first comb teeth 112 to rotate, so as to drive the rotation beam 109 to swing around the rotation axis 110, and the swing of the rotation axis 109 drives the connecting rod 105 and the flexible hinges (106 and 108) to rotate, so as to drive the mirror surface of the mirror 107 to rotate.
In one embodiment, the mirror 107 may be connected to a plurality of the drive modules, for example, 4 drive modules as shown in FIG. 1.
In one embodiment, a plurality of the driving modules may have the same structure. The setting positions of the plurality of the driving modules may be different. Illustratively, the drive modules are disposed in pairs in different dimensions of the mirror 107, e.g., the drive modules are disposed in both the x and y dimensions of the mirror 107.
In one embodiment, the MEMS scanning mirror is a two-dimensional scanning mirror, wherein the drive modules 101 and 102 are a set that can drive the mirror 107 to rotate in a first dimension; the driving module 103 and the driving module 104 are a group, and can drive the mirror 107 to rotate in the second dimension.
In the embodiment of the disclosure, the fixed beam is provided with first comb teeth; the rotating beam is provided with second comb teeth; the first comb teeth are formed on the first film layer, and the second comb teeth are formed on the second film layer. In this way, in the MEMS scanning mirror, since the first comb teeth and the second comb teeth are formed on different film layers, compared with the first comb teeth and the second comb teeth which are formed on the same film layer, on one hand, the processing can be performed by adopting film layers with different thicknesses according to the height requirements of the comb teeth, so that the dimensional consistency of the comb teeth is improved; on the other hand, an etching barrier layer can be arranged on the surface of the film layer in the preparation process, so that the speed and time for etching silicon do not need to be accurately controlled, the preparation efficiency of the chip is improved, and the method is suitable for large-scale mass production.
The connecting piece connects the mirror and the rotating beam; the swinging rotating beam can drive the mirror to rotate through the connecting piece; the connecting piece comprises a connecting rod and a hinge connected with the connecting rod; the mirror, the link and/or the hinge each comprise an upper portion and a lower portion; the upper part is formed on the second film layer; the lower portion is formed in the first film layer. Here, since the connecting member includes the link and the hinge connected with the link, the hinge can raise the swing amplitude of the connecting member, compared with the case where the connecting member includes only the link, thereby driving the free movement of the mirror, and making the movement of the mirror more sensitive.
In one embodiment, referring to fig. 2, the first film layer B and the second film layer a are the same in material and/or thickness.
In one embodiment, the drive module includes a plurality of stacked membrane layers; the plurality of stacked film layers includes: the first film layer B, the second film layer A and the bonding layer arranged between the first film layer B and the second film layer A. Here, the bonding layer may be SiO 2 And a bonding layer. The bonding layer may be a film layer obtained after bonding the first film layer B and the second film layer a.
In one embodiment, the upper portion of the mirror 107 is a mirror surface, and the mirror surface is formed on the second film layer a; and/or, the lower part of the mirror 107 is a mirror surface stiffener, and the mirror surface stiffener is formed on the first film layer B and the bonding layer. Wherein the mirror stiffener may be for supporting the mirror 107.
In one embodiment, the links 105 and/or the hinges (106 and 108) are molded to the first film layer B, the second film layer a, and the bonding layer.
In one embodiment, the connector is co-processed based on the first film layer B, the second film layer a, and the bonding layer. Here, the connection member may be processed based on a predetermined etching process.
In one embodiment, FIG. 2 is a schematic cross-sectional film layer diagram (taken along the A-A direction in FIG. 1) of a multi-film electrostatic MEMS scanning mirror based On Silicon On Insulator (SOI) substrate. In the direction of the arrow in fig. 2, the first Si device layer 201 and the SiO layer are sequentially formed 2 Bonding interlayer (may also be referred to as bonding layer) 202, second Si device layer 203, siO 2 An insulating layer 204 and a substrate Si layer 205. Wherein the first film layer B may be the first Si device layer 201, and the second film layer a may be the second Si device layer 203. The bonding layer may be SiO 2 Bonding intermediate layer 202.
In one embodiment, the first and second Si device layers 201, 203 are the same material. Illustratively, all are N-type doped low resistance silicon.
In one embodiment, the thickness of the first and second Si device layers 201, 203 is the same. The thickness is illustratively 30 μm.
Illustratively, the SiO 2 The bonding interlayer 202 has a thickness of 1 μm.
Illustratively, the substrate Si layer 205 has a thickness of 450 μm.
In one embodiment, the electrostatic comb teeth are divided into high teeth 206 (i.e., the second comb teeth 111) and low teeth 207 (i.e., the first comb teeth 112), the high teeth 206 are formed on the first Si device layer 201, and the height of the high teeth 206 is consistent with the thickness of the first Si device layer 201; low teeth are formed in the second Si device layer 203, the height of which is consistent with the thickness of the second Si device layer 203.
In one embodiment, the mirror surface 208 of the MEMS scanning mirror is formed on the first Si device layer 201, and the mirror stiffener 212 is formed by bonding the intermediate layer 202 and the second Si device layer 203 together. Here, the mirror 208 may be the mirror 107.
In one embodiment, the link 213 and the flexible hinge 214 are formed by the first Si device layer 201, the second Si device layer 203, and the bonding interlayer 203.
In one embodiment, metal pads 210 are formed on the upper surface of the first Si device layer 201, and metal pads 211 are formed on the upper surface of the second Si device layer 202, respectively, to serve as access points for driving signals. Wherein the drive signal may be an electrical signal.
In one embodiment, the metal pad 210 may be made of Ti and/or Al, and may, for example, form an ohmic contact with Si of the device layer. In one embodiment, the upper surface of the mirror 208 is also coated with Ti and/or Al for enhancing the reflectivity of the mirror.
In one embodiment, the second Si device layer 203, the SiO 2 The insulating layer 204 and the substrate Si layer 205 are from the same piece of SOI wafer, and the first Si device layer 201 is from another piece of SOI wafer. Here, the SOI wafer may correspond to one film layer.
For a better understanding of the membrane structure shown in fig. 2, the membrane structure of the MEMS scanning mirror in the related art will be described below by way of one embodiment:
referring to fig. 3, a cross-sectional mask layer schematic of a MEMS scanning mirror product in accordance with the related art is shown. It should be noted that the exemplary structure shown in fig. 3 is not limiting to the present disclosure, and may be used for illustrative purposes for understanding.
In FIG. 3, si device layers 301, siO are sequentially formed from top to bottom along the arrow direction 2 An insulating layer 302 and a Si substrate layer 303. It can be seen that the MThe EMS scan mirror has only one layer of silicon as the Si device layer. The functional components of the scan mirror, including the high teeth 304, low teeth 305, links 309, and flexible hinges 320, are all formed on the same Si device layer 301. The heights (e.g., 21 μm) of the high teeth 304 and the low teeth 305 are not uniform with the thickness (e.g., 40 μm) of the device layer, and thus, the Si device layer 301 needs to be etched from both the upper and lower directions, respectively, during the preparation of the comb teeth. Because the silicon oxide layer is not arranged in the middle of the Si device layer as an etching barrier layer, the etching speed and the etching time are required to be precisely controlled in the process of etching and preparing high teeth and low teeth, and even the etching program is required to be repeatedly modified, so that the preparation efficiency of the chip is lower. In addition, the thickness of the device layer 301 is achieved by thinning the silicon wafer from about a first thickness (e.g., 500 μm) to a second thickness (e.g., 40 μm) using mechanical thinning and Chemical Mechanical Polishing (CMP) processes, which consume a significant amount of time, further reducing the manufacturing efficiency of the chip. In addition, the mechanical thinning silicon and the dry etching silicon process have certain in-chip/inter-chip non-uniformity, so that the heights of comb teeth (304 and 305) of different chips are different, the thicknesses of the connecting rod 309, the flexible hinge 320 and the mirror surface 306 are different, the rotation angle and the resonance frequency of the scanning mirror are further different, and the qualification rate of the scanning mirror is reduced. The two problems make the electrostatic scanning mirror chip difficult to prepare in large scale, and the price is high, so that the electrostatic scanning mirror chip is limited to be widely applied to the fields of laser radars and the like. To this end, the present disclosure proposes a MEMS scanning mirror as shown in fig. 2.
As shown in fig. 4, an embodiment of the present disclosure provides a method for manufacturing a MEMS scanning mirror, including:
step 41, etching first comb teeth, the lower part of a connecting rod, the lower part of a hinge and/or mirror surface reinforcing ribs on a first film layer of a first wafer, wherein the first wafer comprises the first film layer and a first etching blocking layer adjacent to one surface of the first film layer;
step 42, bonding a second wafer and the first wafer on the other surface of the first film layer, wherein the second wafer comprises a second film layer, a second etching barrier layer adjacent to one surface of the second film layer and a bonding layer adjacent to the other surface of the second film layer;
and step 43, etching second comb teeth, the upper parts of the connecting rods, the upper parts of the hinges and/or the mirror surface on the second film layer of the second wafer.
In one embodiment, the wafer may be an SOI wafer. Here, the first wafer may be a first SOI wafer; the first film layer may be a Si device layer 401; the etching barrier layer can be SiO 2 An intermediate layer 402; the second wafer may be a second piece of SOI wafer; the second film layer may be a Si device layer 405; the bonding layer may be SiO 2 Layer 407; the first comb teeth 112 may be low teeth or lower teeth 404; the second comb teeth 112 may be high teeth or upper teeth 409.
Referring to fig. 5, a first SOI wafer used in the fabrication process is illustrated. The first SOI wafer may be 6 inches or 8 inches in diameter, for example.
In one embodiment, the first piece of SOI wafer may include a Si device layer 401, siO 2 An intermediate layer 402 and a Si substrate 403. The Si device layer 401 may be, for example, 30 μm thick and may be an N-type low resistance single crystal silicon layer. Illustratively SiO 2 The thickness of the intermediate layer 402 may be 2 μm. Illustratively, the Si substrate 403 may be high-resistance monocrystalline silicon, which may be 450 μm thick.
In one embodiment, the method further comprises:
and etching a mirror surface reinforcing rib of the MEMS scanning mirror on the first film layer B of the first wafer.
In one embodiment, referring to fig. 6, the low teeth 404 (corresponding to the first comb teeth 112 described above) and mirror stiffener 418 structures are etched in the Si device layer of the first SOI wafer by a reactive ion deep etching (DRIE) process, and the resulting structures also include links 419 and the lower half (half height) of the flexible hinge 330. In one embodiment, the DRIE etches Si and SiO 2 The ratio of the rates of (2) is about 100:1, thus, siO 2 The intermediate layer 402 may act as the first etch stop layer, allowing a period of over-etching during the DRIE etch, thus reducing etch rate and time control requirements, andthe height of the structures such as the low teeth 404 is determined by the thickness of the Si device layer 401, is not affected by the DRIE process, and has high structural consistency.
In one embodiment, referring to fig. 7, a second SOI wafer is used in the fabrication process, the second SOI wafer having the same characteristics as the first SOI wafer. In one embodiment, to increase bonding power, a layer of SiO is deposited on the surface of the Si device layer 401 of the wafer SOI 2 (407) corresponding to the bonding layer. Illustratively, the SiO 2 The layer thickness may be 1 μm.
In one embodiment, after bonding the second wafer to the first wafer on the other surface of the first film layer, the method further comprises:
step a, annealing at a first preset temperature;
and b, stopping annealing after the preset time, and cooling to a second preset temperature according to a preset cooling speed.
Illustratively, the first predetermined temperature may be 1100 ℃ ± 100.
Illustratively, the predetermined time period may be 4h 2.
The second predetermined temperature may be, for example, 25 ℃ ± 5.
In one embodiment, please refer to FIG. 8, in terms of SiO 2 Layer 407 serves as a bonding intermediate layer to bond the two SOI wafers together. In one embodiment, the pre-bonding process is hydrophilic bonding, and after pre-bonding, the wafer is annealed in a high temperature furnace at 1100 ℃ for 4 hours and slowly cooled to room temperature to complete the wafer high strength bonding.
In one embodiment, after bonding the second wafer to the first wafer on the other surface of the first film layer, the method further comprises: and removing the substrate layer and/or the etching barrier layer on the second wafer by utilizing a wet etching process.
In one embodiment, referring to FIG. 9, the substrate layer 408 and SiO of the second SOI wafer are removed by a wet etching process 2 Layer 406 retains only Si device layer 405.
In one embodiment, referring to FIG. 10, a DRIE process is utilized at device layer 405 (corresponding to the second comb teeth 111), mirror 420 structure, and upper half of the connecting rod 419, flexible hinge 420. Here, siO 2 Layer 407 acts as an etch stop layer, has low requirements on the control accuracy of the etching process, and has good uniformity of the etched structure size.
In one embodiment, please refer to fig. 11, drie etches the Si substrate layer 403 until SiO 2 The insulating layer 402 prepares a hollowed-out area on the back of the chip. SiO (SiO) 2 Insulating layer 402 also acts as an etch stop during etching.
In one embodiment, a wet etching process is used to remove SiO between the first and/or second comb teeth 2 。
In one embodiment, referring to FIG. 12, wet etching is used to remove SiO between comb teeth and like structures 2 Realizing the release of the comb teeth.
In one embodiment, the present disclosure may be sequentially executed according to fig. 6, 8, 9, 10, 11, and 12, or may be executed according to other sequences capable of embodying the technical concept of the present disclosure, which is not limited herein.
In one embodiment, the first wafer includes a substrate layer; the method further comprises the steps of:
step a, etching a partial region of the substrate layer;
step b, bonding a supporting sheet on the substrate layer;
c, carrying out surface treatment on the bonding pad and/or the mirror surface area;
and d, removing the supporting sheet after finishing the surface treatment.
Wherein the surface treatment comprises a coating treatment.
In one embodiment, the surface treatment of the pad and/or the mirror region includes:
sequentially sputtering and/or evaporating metal in a region corresponding to the surface bonding pad on the second film layer, wherein the metal comprises Ti and/or Al;
and/or the number of the groups of groups,
annealing the surface pad at a third predetermined temperature in a vacuum environment to form an ohmic contact;
and/or the number of the groups of groups,
and sputtering and/or evaporating metal on the mirror surface area of the upper surface of the second film layer after annealing, wherein the metal comprises Ti and/or Al.
The third predetermined temperature may be 450 ℃ ± 100, for example.
In one embodiment, referring to fig. 13, since most of the wafer area is hollowed out, a glass 411 needs to be temporarily bonded on the lower surface of the substrate layer 403 as a supporting sheet before coating to enhance the strength and operability of the chip.
In one embodiment, referring to fig. 14, 10nm Ti (412, 415), 200nm Al (413, 414) are sputtered/evaporated sequentially on the device layer 405 in the region corresponding to the surface pad, and annealed at 400 ℃ in a vacuum environment to form an ohmic contact.
In one embodiment, referring to FIG. 15, after annealing, a reflective film is formed by sequentially sputtering/evaporating 10nm Ti (416), 200nm Al (417) on the mirror surface area of the Si device layer 405. The reason why the two-step coating process is separated as in fig. 14 and 15 is that the annealing process increases the roughness of the metal film and reduces the reflectivity.
In one embodiment, please refer to fig. 16, which illustrates a schematic view of the fabrication method with the support sheet removed, thus completing the fabrication of the entire MEMS scanning mirror.
For a better understanding of the disclosed embodiments, an exemplary embodiment is described below:
example 1:
the embodiments of the present disclosure use at least 2 SOI wafers, a first SOI wafer and a second SOI wafer, respectively. The first SOI wafer (corresponding to the second film layer in the present disclosure) has a diameter of 6 inches or 8 inches, the Si device layer is 30 μm, and the Si device layer is an N-type low-resistance single crystal silicon layer. SiO (SiO) 2 The thickness of the intermediate layer is 2 μm, the substrate layer is high-resistance monocrystalline silicon, and the thickness is 450 μm. The second piece of SOI wafer (corresponding to the first film layer in the present disclosure) may be identical to the first piece of SOI wafer, and the Si device of the second piece of SOI waferA layer of SiO is laminated on the surface of the layer 2 。
Referring to fig. 17, an embodiment of the disclosure provides a method for manufacturing a MEMS scanning mirror, including:
and 171, etching a low-tooth (corresponding to the first comb teeth) and mirror surface reinforcing rib structure on the Si device layer (corresponding to the first film layer) of the first SOI wafer through a reactive ion deep etching process, wherein the formed structure also comprises a connecting rod and the lower half part (half height) of the flexible hinge.
Step 172 by SiO 2 The layer serves as an intermediate layer bonding the first and second SOI wafers together. The pre-bonding process is hydrophilic bonding, annealing is carried out in a high-temperature furnace at 1100 ℃ for 4 hours after the pre-bonding, and the temperature is slowly reduced to room temperature, thus finishing the high-strength bonding of the wafer.
Step 173, removing the substrate layer and SiO of the second SOI wafer by wet etching process 2 And a layer, which only retains the Si device layer.
Step 174, etching upper teeth, mirror, and upper half of the tie bars and flexible hinges on the Si device layer of the second SOI wafer using a DRIE process.
Step 175, DRIE etching the Si substrate layer until SiO 2 And the insulating layer is used for preparing a hollowed-out area on the back of the chip. SiO (SiO) 2 The insulating layer also acts as an etch stop during etching.
Step 176, adopting wet etching to remove SiO between comb teeth and other structures 2 Realizing the release of the comb teeth. Thus, the preparation of the mechanical structure of the rotating mirror chip is completed.
Step 177, a piece of glass is temporarily bonded on the lower surface of the substrate layer before coating as a supporting sheet.
And 178, sequentially sputtering or evaporating 10nm Ti and 200nm Al on the corresponding area of the surface bonding pad on the Si device layer, and annealing at 400 ℃ in a vacuum environment to form ohmic contact. And sputtering or evaporating 10nm Ti and 200nm Al on the mirror surface area on the upper surface of the Si device layer in sequence after annealing to form a reflecting film.
And 179, removing the supporting sheet to finish the preparation of the whole MEMS rotary mirror.
It should be noted that, the specific structures of the foregoing embodiments may be illustrated by any drawings and descriptions shown in the present disclosure, and are not limited herein.
In one embodiment, the presently disclosed embodiments also provide a lidar comprising a MEMS scanning mirror as described in any of the present disclosure.
It will be understood by those skilled in the art that the sequence number of each step in the above embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present invention.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (10)
1. A microelectromechanical system MEMS scanning mirror, comprising:
a mirror;
a drive module, comprising: the device comprises a fixed beam with fixed position, a rotating beam capable of rotating around a shaft and a connecting piece;
the fixed beam is provided with first comb teeth; the rotating beam is provided with second comb teeth; the first comb teeth are formed on the first film layer, and the second comb teeth are formed on the second film layer; the first comb teeth and the second comb teeth can drive the rotating beam to swing under the action of a driving signal;
the connecting piece connects the mirror and the rotating beam; the swinging rotating beam can drive the mirror to rotate through the connecting piece; the connecting piece comprises a connecting rod and a hinge connected with the connecting rod; the mirror, the link and/or the hinge each comprise an upper portion and a lower portion; the upper part is formed on the second film layer; the lower portion is formed in the first film layer.
2. The MEMS scanning mirror of claim 1, wherein the first membrane layer and the second membrane layer are the same material and/or thickness.
3. The MEMS scanning mirror of claim 1, wherein the drive module comprises a plurality of laminated membrane layers; the plurality of stacked film layers includes: the first film layer, the second film layer and the bonding layer arranged between the first film layer and the second film layer.
4. The MEMS scanning mirror according to claim 3, wherein an upper portion of the mirror is a mirror surface, the mirror surface being formed in the second film layer; and/or the lower part of the mirror is provided with a mirror surface reinforcing rib, and the mirror surface reinforcing rib is formed on the first film layer and the bonding layer; and/or the connecting rod and/or the hinge are/is formed on the first film layer, the second film layer and the bonding layer.
5. A method of manufacturing a MEMS scanning mirror, comprising:
etching first comb teeth, the lower part of a connecting rod, the lower part of a hinge and/or mirror reinforcing ribs on a first film layer of a first wafer, wherein the first wafer comprises the first film layer and a first etching blocking layer adjacent to one surface of the first film layer;
bonding a second wafer and the first wafer on the other surface of the first film layer, wherein the second wafer comprises a second film layer, a second etching barrier layer adjacent to one surface of the second film layer and a bonding layer adjacent to the other surface of the second film layer;
and etching second comb teeth, the upper parts of the connecting rods, the upper parts of the hinges and/or the mirror surface on the second film layer of the second wafer.
6. The method of manufacturing according to claim 5, further comprising, after bonding the second wafer and the first wafer on the other surface of the first film layer:
annealing at a first predetermined temperature;
stopping annealing after a preset time period, and cooling to a second preset temperature according to a preset cooling speed.
7. The method of manufacturing according to claim 5, further comprising, after bonding the second wafer and the first wafer on the other surface of the first film layer:
removing the substrate layer and/or the second etching barrier layer on the second wafer by utilizing a wet etching process;
and/or the number of the groups of groups,
removing SiO between the first comb teeth and/or the second comb teeth by adopting a wet etching process 2 。
8. The method of manufacturing of claim 5, wherein the first wafer comprises a substrate layer; the method further comprises the steps of:
etching a partial region of the substrate layer;
bonding a support sheet to the substrate layer;
surface treatment is carried out on the bonding pad and/or the mirror surface area;
and removing the supporting sheet after finishing the surface treatment.
9. The method of manufacturing according to claim 8, wherein the surface treatment of the pad and/or the mirror region comprises:
sputtering and/or evaporating metal on the area corresponding to the surface bonding pad on the second film layer, wherein the metal comprises Ti and/or Al;
and/or the number of the groups of groups,
annealing the surface pad at a third predetermined temperature of the vacuum environment to form an ohmic contact;
and/or the number of the groups of groups,
and sputtering and/or evaporating metal on the mirror surface area of the upper surface of the second film layer after annealing, wherein the metal comprises Ti and/or Al.
10. A lidar comprising a MEMS scanning mirror as claimed in any of claims 1 to 4.
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| CN202111504484.XA CN116256889A (en) | 2021-12-10 | 2021-12-10 | MEMS scanning mirror and preparation method thereof |
| PCT/CN2022/137822 WO2023104177A1 (en) | 2021-12-10 | 2022-12-09 | Micro-electro-mechanical system (mems) scanning mirror and preparation method therefor |
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| CN202111504484.XA CN116256889A (en) | 2021-12-10 | 2021-12-10 | MEMS scanning mirror and preparation method thereof |
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| US6827866B1 (en) * | 2000-05-24 | 2004-12-07 | Active Optical Networks, Inc. | Deep-well lithography process for forming micro-electro-mechanical structures |
| CN104016297B (en) * | 2014-06-20 | 2016-04-27 | 上海工程技术大学 | A kind of 3-DOF silicon-based nano level locating platform and preparation method thereof |
| US10437046B1 (en) * | 2014-10-28 | 2019-10-08 | AG Microsystems, INC. | Micro electro mechanical system and layered hinge for use in MEMS micromirror having first and second serpentine shapes |
| CN113460956B (en) * | 2020-03-30 | 2024-05-24 | 绍兴中芯集成电路制造股份有限公司 | MEMS device and method of forming the same |
| CN111552072B (en) * | 2020-04-28 | 2022-07-12 | 安徽中科米微电子技术有限公司 | Large-size MEMS vertical comb micro-mirror and preparation method thereof |
| CN113671689B (en) * | 2020-05-13 | 2024-06-18 | 安徽中科米微电子技术有限公司 | MEMS rotating mirror structure with large mirror surface |
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