CN116256076B - Temperature sensing element, light emitting device and temperature sensing device - Google Patents
Temperature sensing element, light emitting device and temperature sensing device Download PDFInfo
- Publication number
- CN116256076B CN116256076B CN202310530823.4A CN202310530823A CN116256076B CN 116256076 B CN116256076 B CN 116256076B CN 202310530823 A CN202310530823 A CN 202310530823A CN 116256076 B CN116256076 B CN 116256076B
- Authority
- CN
- China
- Prior art keywords
- temperature sensing
- transistor
- temperature
- sensing element
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
- H05B47/10—Controlling the light source
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses a temperature sensing element, a light emitting device and a temperature sensing device. The temperature sensing element includes: the temperature sensing unit is used for sensing temperature information; the potential buffer unit is connected with the temperature sensing unit and is used for resetting the potential of the first node; the induction signal output end is connected with the first node and is used for outputting a voltage signal; the voltage adjusting unit is connected between the temperature sensing unit and the potential buffering unit and is used for adjusting the amplitude range of the voltage signal output by the sensing signal output end. The technical scheme provided by the application solves the problem that the temperature sensor based on the transistor has lower sensitivity to temperature detection.
Description
Technical Field
The present application relates to the field of sensors, and more particularly, to a temperature sensing element, a light emitting device, and a temperature sensing device.
Background
With the development of display technology, the requirements of the sensor are increasing. Since the transistor-based temperature sensor has advantages of small device size and easy realization of large area integration, it is widely used. The conventional transistor temperature sensor generally adopts a plurality of transistors connected in series, and outputs the output as the gate input of the transistor of the next stage to amplify the current change caused by the temperature difference step by step. The existing transistor-based temperature sensor has the problems of unstable output voltage and lower sensitivity.
Disclosure of Invention
The application provides a temperature sensing element, a light emitting device and a temperature sensing device, which are used for solving the problem that a transistor-based temperature sensor has low sensitivity to temperature detection.
In order to realize the technical problems, the application adopts the following technical scheme:
an embodiment of the present application provides a temperature sensing element including:
the temperature sensing unit is used for sensing temperature information;
the potential buffer unit is connected with the temperature sensing unit and is used for resetting the potential of the first node;
the induction signal output end is connected with the first node and is used for outputting a voltage signal;
the voltage adjusting unit is connected between the temperature sensing unit and the potential buffering unit and is used for adjusting the amplitude range of the voltage signal output by the sensing signal output end.
Optionally, the first end of the temperature sensing unit is used for being connected with a first power signal, the second end of the temperature sensing unit and the first end of the potential buffer unit are connected to a first node, the second end of the potential buffer unit is used for being connected with a second voltage signal, and the control end of the potential buffer unit is used for being connected with a reset signal;
the first end of the voltage adjusting unit is used for being connected with a driving clock signal, and the second end of the voltage adjusting unit is connected with the first node.
Optionally, the temperature sensing unit includes at least two first transistors, the at least two first transistors are connected in series, and a gate and a source of the same first transistor are connected.
Optionally, the potential buffer unit includes:
the first electrode of the second transistor is connected with the first node, the second electrode of the second transistor is used for being connected with a second voltage signal, and the control end of the second transistor is used for being connected with a reset signal;
wherein the off-state current of the second transistor is less than the off-state current of the first transistor.
Optionally, the voltage adjustment unit includes:
a third transistor having a first electrode for accessing a driving clock signal, the second electrode of the third transistor and a control terminal of the third transistor being connected to the first node;
a storage capacitor connected between the second pole of the third transistor and the control terminal of the third transistor;
the third transistor is used for being turned on or off according to the potential of the first node so as to write a driving clock signal into the storage capacitor.
Optionally, the temperature sensing element further comprises:
the voltage stabilizing unit is connected between the first node and the sensing signal output end and used for stabilizing a voltage signal output by the sensing signal output end.
According to another aspect of the present application, there is provided a light emitting device including:
a substrate;
a drive circuit disposed on one side of the substrate and at least one temperature sensing element of any of the first aspects;
at least one light-emitting element arranged on one side of the temperature sensing element away from the substrate, wherein the light-emitting element emits light according to a driving signal of the driving circuit;
the temperature sensing element is used for detecting temperature information of the light emitting element.
Optionally, the temperature sensing elements are arranged in one-to-one correspondence with the light emitting elements.
Optionally, the light emitting device further includes:
the control module is connected with the temperature sensing element and is used for generating a first control instruction according to a voltage signal output by the temperature sensing element;
the switching circuit is connected with the control module and is used for being turned on or turned off according to a first control instruction so as to adjust the on state of the light-emitting element;
preferably, the control module is connected with the driving circuit, and is used for generating a second control instruction according to the voltage signal output by the temperature sensing element, wherein the second control instruction is used for adjusting the driving voltage of the driving circuit so as to adjust the working state of the light emitting element;
preferably, the temperature sensing element shares the drive clock signal and the second voltage signal with the control module.
Optionally, the light emitting device further includes:
the calibration module is connected with the temperature sensing element and is used for calibrating the voltage signal output by the temperature sensing element;
the light-emitting module is connected with the control module and is used for responding to the third control instruction and displaying the voltage signal output by the temperature sensing element.
According to still another aspect of the present application, there is provided a temperature sensing device including: the temperature sensing element of any of the first aspects.
The temperature sensing element provided by the embodiment of the application is provided with the temperature sensing unit, the potential buffer unit, the voltage adjusting unit and the sensing signal output end. In the reset stage, the potential of the first node is reset through the potential buffer unit, and in the temperature detection stage, temperature information is detected through the temperature sensing unit. And the amplitude range of the voltage signal output by the sensing signal output end is regulated in the potential maintaining stage through the potential buffer unit. By the arrangement, the potential change range of the sensing signal output end of the temperature sensing element is increased, so that the temperature accuracy sensed by the temperature sensing element can be enlarged. The temperature accuracy of the temperature sensing element can be set according to the requirement, and the temperature sensing sensitivity of the temperature sensing element is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following description will briefly explain the drawings needed in the description of the embodiments of the present application, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the contents of the embodiments of the present application and these drawings without inventive effort for those skilled in the art.
FIG. 1 is a schematic diagram of a temperature sensor according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a timing waveform of a temperature sensor according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a 4T temperature sensor according to an embodiment of the present application;
FIG. 4 is a schematic structural diagram of a 4T1C temperature sensor according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a 5T1C temperature sensor according to an embodiment of the present application;
FIG. 6 is a timing waveform diagram of a 5T1C temperature sensor according to an embodiment of the present application;
FIG. 7 is a schematic diagram showing detection sensitivity of different temperature sensing elements according to an embodiment of the present application;
fig. 8 is a schematic structural view of a first light emitting device according to an embodiment of the present application;
fig. 9 is a schematic structural view of a second light emitting device according to an embodiment of the present application;
fig. 10 is a schematic structural view of a third light emitting device according to an embodiment of the present application;
fig. 11 is a schematic structural view of a fourth light emitting device according to an embodiment of the present application;
fig. 12 is a schematic structural view of a fifth light emitting device according to an embodiment of the present application;
fig. 13 is a schematic structural diagram of a temperature sensing device according to an embodiment of the present application.
Detailed Description
The application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present application are shown in the drawings.
Fig. 1 is a schematic structural diagram of a temperature sensing element according to an embodiment of the present application. Referring to fig. 1, a temperature sensing element 100 provided in an embodiment of the present application includes: a temperature sensing unit 1 for sensing temperature information; the potential buffer unit 2 is connected with the temperature sensing unit 1 and is used for resetting the potential of the first node N1; the sensing signal output end Vout is connected with the first node N1 and is used for outputting a voltage signal; the voltage adjusting unit 3, the voltage adjusting unit 3 is connected between the temperature sensing unit 1 and the potential buffer unit 2, and the voltage adjusting unit 3 is used for adjusting the amplitude range of the voltage signal output by the sensing signal output end Vout.
Specifically, the potential buffer unit 2, the temperature sensing unit 1 and the sensing signal output terminal Vout are connected to the first node N1. The potential buffer unit 2 may include a transistor, and in the reset phase t1, the potential buffer unit 2 may pull down the potential of the sensing signal output terminal Vout through the transistor M2 thereof, so that the sensing signal output terminal Vout is at a lower potential to reset the potential of the sensing signal output terminal Vout.
Temperature sensing unit 1, temperature sensing unit 1 may include a transistor. In the temperature detection stage t2, when the ambient temperature changes, the temperature sensing unit 1 may cause the potential of the sensing signal output terminal Vout to change along with the change of the ambient temperature, so as to implement sensing of temperature information.
And the voltage adjusting unit 3, wherein the voltage adjusting unit 3 is connected between the temperature sensing unit 1 and the potential buffering unit 2. The voltage adjusting unit 3 includes a transistor. In the potential keeping stage t3, the voltage adjusting unit 3 is turned on according to the voltage signal of the first node N1 to raise or lower the potential of the first node N1, so as to implement adjustment of the voltage signal output by the sensing signal output terminal Vout, thereby enabling the amplitude range of the output voltage signal of the temperature sensing element 100 to be adjustable. By the arrangement, the magnitude of the potential of the sensing signal output end Vout of the temperature sensing element can be increased, so that the temperature change of the environment can be accurately reflected, and the temperature accuracy of sensing of the temperature sensing element 100 can be improved.
The temperature sensing element provided in this embodiment is provided with a temperature sensing unit 1, a potential buffer unit 2, a voltage adjusting unit 3 and a sensing signal output terminal Vout. In the reset phase t1, the potential of the first node N1 is reset by the potential buffer unit 2, and in the temperature detection phase t2, temperature information is sensed by the temperature sensing unit 1. And adjusts the amplitude range of the voltage signal output by the sensing signal output terminal Vout through the voltage adjusting unit 3. By this arrangement, the magnitude of the potential of the sensing signal output terminal Vout of the temperature sensing element is increased, so that the accuracy of the temperature sensed by the temperature sensing element 100 can be improved. The temperature sensing precision of the temperature sensing element can be set according to the requirement, and the temperature sensing precision of the temperature sensing element is improved.
Fig. 2 is a schematic timing waveform diagram of a temperature sensor according to an embodiment of the present application. With reference to fig. 1 and fig. 2, optionally, on the basis of the above embodiment, a first end of the temperature sensing unit 1 is used for accessing the first power signal Vin, a second end of the temperature sensing unit 1 and a first end of the potential buffering unit 2 are connected to the first node N1, a second end of the potential buffering unit 2 is used for accessing the second voltage signal Vgl, and a control end of the potential buffering unit 2 is used for accessing the reset signal Voff; the first terminal of the voltage adjusting unit 3 is used for accessing the driving clock signal CK, and the second terminal of the voltage adjusting unit 3 is connected with the first node N1.
Specifically, the second voltage signal Vgl may be a low level signal. The potential buffer unit 2 is turned on according to a reset signal Voff connected to a control terminal thereof to write a second voltage signal Vgl into the first node N1, thereby resetting the potential of the first node N1. By the arrangement, the sensing signal output end Vout is at a lower potential, and the temperature sensing precision of the temperature sensing element is further improved.
The first power signal Vin may be a pulse signal. The effective signal of the first power signal Vin corresponds to the temperature detection phase t2. The first power signal Vin is used as an input signal of the temperature sensing unit 1, and in the temperature detection stage t2, when the ambient temperature changes, the temperature sensing signal output by the temperature sensing unit 1 can be changed along with the change of the ambient temperature, and the electric potential output to the first node N1 changes, so that the temperature sensing unit 1 detects the temperature.
The driving clock signal CK may be a pulse signal. The voltage adjusting unit 3 transmits the driving clock signal CK to the second terminal of the voltage adjusting unit 3 according to the potential conduction of the first node N1, and the voltage of the first node N1 connected to the power adjusting unit is increased because the potential of the driving clock signal CK can be adjusted as required. This arrangement increases the temperature accuracy sensing sensitivity of the temperature sensing element 100.
Fig. 3 is a schematic structural diagram of a 4T temperature sensing element according to an embodiment of the present application. On the basis of the above embodiment, referring to fig. 3, optionally, the temperature sensing unit 1 includes at least two first transistors M1, at least two first transistors M1 are connected in series, and the gate and source of the same first transistor M1 are connected.
Specifically, the temperature sensing unit 1 includes at least two first transistors M1, M1-1 and M1-2, respectively, wherein the drain electrode of the M1-1 is connected with the source electrode of the M1-2.
The gate and source of the same first transistor M1 are connected. The temperature sensing unit 1 is connected with a first power signal Vin, and the potential buffering unit 2 is connected with a second voltage signal Vgl. In the temperature detection phase t2, the first power signal Vin is higher than the second voltage signal Vgl, which may be a high level signal, and the second voltage signal Vgl may be a low level signal. The gate and the source of each first transistor M1 are connected, and the voltage between the gate and the source of the first transistor M1 is 0, so that the first transistor M1 can be in an off state, so that the potential of the sensing signal output terminal Vout is kept valid, and the normal operation of the temperature sensing element 100 can be maintained.
When the first transistor M1 is in the off state, the off-state current of the first transistor M1 changes with a change in temperature, and when the temperature changes to a certain value, the amount of change in the off-state current value of the first transistor M1 will reach saturation. The specific method can be as follows: the temperature rises, and the off-state current of the first transistor M1 becomes large; the temperature decreases and the off-state current of the first transistor M1 becomes smaller. At least two first transistors M1 are disposed in the temperature sensing unit 1, and the temperature change value that makes the off-state current change amounts of all the first transistors M1 reach the saturation state needs to be larger, so that the temperature accuracy sensed by the temperature sensing element 100 can be increased by disposing at least two first transistors M1.
For example, with continued reference to fig. 2, during the temperature detection phase t2, the temperature sensing unit 1 is connected to a high level signal, the potential buffering unit 2 is connected to a low level signal, and the potential buffering unit 2 may have an effect of pulling down the potential of the sensing signal output terminal Vout. In the temperature detection stage t2, the potential of the sensing signal output terminal Vout outputs a first power signal Vin, for example, a high level signal, so that the voltage adjusting unit 3 conducts according to the high level signal of the first node N1 and transmits the driving clock signal CK to the first node N1. In the potential holding stage t3, since the potential of the driving clock signal CK is at a high level, the voltage of the first node N1 to which the power supply adjustment unit is connected is increased to a high level signal of the driving clock signal CK, further increasing the sensing sensitivity of the temperature sensing element 100.
With continued reference to fig. 3, an alternative embodiment, based on the above example, the potential buffer unit 2, which is optional, includes: and a first electrode of the second transistor M2 is connected with the first node N1, a second electrode of the second transistor M2 is used for being connected with a second voltage signal Vgl, and a control end of the second transistor M2 is used for being connected with a reset signal Voff.
Specifically, the drain of the first transistor M1-2 is connected to the source or drain of the second transistor M2. The sensing signal output terminal Vout and the first node N1 are located between the first transistor M1-2 and the second transistor M2. In the reset phase t1, the potential buffer unit 2 may pull down the potential of the sensing signal output terminal Vout through the second transistor M2, so that the sensing signal output terminal Vout is at a lower potential.
The off-state current of the first transistor M1 may be changed along with the change of the environmental temperature, and the first transistor M1 may cause the potential change of the sensing signal output terminal Vout when the environmental temperature changes, so that the potential change of the sensing signal output terminal Vout may reflect the environmental temperature change condition, and the temperature sensing element 100 may perform the function of temperature sensing.
Illustratively, during operation of the temperature sensing element 100, both the first transistor M1 and the second transistor M2 are in an off state. The turned-off first transistor M1 is used to sense a temperature change.
The sensing signal output terminal Vout is located between the second transistor M2 and the first transistor M1. Therefore, the potential buffer unit 2 may pull the potential of the sensing signal output terminal Vout down through the second transistor M2, so that the sensing signal output terminal Vout is at a lower potential. The off-state current of the first transistor M1 changes with the change of the environmental temperature, and the amplitude of the off-state current of the second transistor M2 with the change of the temperature may be smaller than the amplitude of the off-state current of the first transistor M1 with the change of the temperature. The temperature sensing unit 1 may sense a temperature change condition of the environment where the temperature sensing element 100 is located through the first transistor M1, and the first transistor M1 may cause a potential change of the sensing signal output terminal Vout when the ambient temperature changes. Therefore, the change in the potential of the sensing signal output terminal Vout can reflect the temperature change of the environment, and the temperature sensing element 100 thus functions as temperature sensing. Because the sensing signal output end Vout is at a lower potential, the potential change space of the sensing signal output end Vout is larger, and the temperature sensing precision of the temperature sensing element is higher.
Fig. 4 is a schematic structural diagram of a temperature sensing element of 4T1C according to an embodiment of the present application. On the basis of the above-described embodiment, in conjunction with fig. 3 and 4, the voltage adjustment unit 3 may optionally include: and a third transistor M3, a first pole of the third transistor M3 is used for accessing the driving clock signal CK, and a second pole of the third transistor M3 and a control terminal of the third transistor M3 are connected to the first node N1.
Specifically, in the temperature detection stage t2, when the sensing signal output terminal Vout outputs a low level signal, the third transistor M3 is turned off. When the sensing signal output terminal Vout outputs a high level signal, the third transistor M3 is turned on, and the driving clock signal CK is output to the first node N1 through the turned-on third transistor M3.
In the potential holding stage t3, when the sensing signal output end Vout outputs a high level signal, the third transistor M3 is turned on, the potential of the driving clock signal CK is a high level signal, the high level signal of the driving clock signal CK is transmitted to the first node N1, and the amplitude of the potential of the sensing signal output end Vout is increased due to the larger amplitude of the driving clock signal CK, so that the temperature of the temperature sensing element is increased.
As can be seen from fig. 2 and 3, when the third transistor M3 is turned on according to the high level signal of the first node N1, the driving clock signal CK outputs a voltage to the first node N1 through the turned-on third transistor M3. Since no storage capacitor is supplied, a voltage drop phenomenon occurs, and the potential of the sensing signal output terminal Vout decreases with time, which affects the sensitivity of temperature sensing of the temperature detecting element.
Alternatively, with continued reference to fig. 4, the voltage adjustment unit 3 may include a storage capacitor C. The storage capacitor C is connected between the second pole of the third transistor M3 and the control end of the third transistor M3; the third transistor M3 is turned on or off according to the potential of the first node N1 to write the driving clock signal CK into the storage capacitor C.
Specifically, the gate and the drain of the third transistor M3 are connected to a storage capacitor C. In the temperature detection stage t2, when the third transistor M3 is turned on according to the high level signal of the first node N1, the driving clock signal CK is a low level signal, and the first node N1 charges the storage capacitor C.
In the potential holding stage t3, the potential of the driving clock signal CK is a high level signal. Due to the storage capacitor C, the potential of the driving clock signal CK is a high level signal, and the storage capacitor C is continuously charged. Since the first power signal Vin is a low level signal, the first transistor M1 and the second transistor M2 are turned off. The storage capacitor C discharges to the gate of the third transistor M3, so that the voltage of the first node N1 to which the voltage adjusting unit 3 is connected increases to a high level signal of the driving clock signal CK, further increasing the temperature accuracy sensed by the temperature sensing element 100. Because of the storage capacitor C, the voltage of the sensing signal output end Vout is stable, and the voltage drop phenomenon is avoided, so that the temperature sensing precision is improved, the voltage change is obvious at the same temperature, and the temperature detection sensitivity of the temperature sensing element is higher.
Fig. 5 is a schematic structural diagram of a 5T1C temperature sensor according to an embodiment of the present application. Fig. 6 is a timing waveform diagram of a 5T1C temperature sensor according to an embodiment of the present application. Referring to fig. 5 and 6, optionally, the temperature sensing element 100 may further include: the voltage stabilizing unit 4, the voltage stabilizing unit 4 is connected between the first node N1 and the sensing signal output terminal Vout, and the voltage stabilizing unit 4 is used for stabilizing the voltage signal output by the sensing signal output terminal Vout.
Specifically, the voltage stabilizing unit 4 is connected to the sensing signal output terminal Vout. The output control unit may include a fourth transistor M4. The drain of the fourth transistor M4 is connected to the sensing signal output terminal Vout. The gate of the fourth transistor M4 is connected to the first node N1, the fourth transistor M4 is turned on, and the voltage drop generated by the leakage current can be reduced by the arrangement of the fourth transistor M4, so that the voltage signal output by the sensing signal output terminal Vout is more stable. Therefore, the voltage signal output by the sensing signal output terminal Vout is more stable, so that the distortion of the voltage signal output by the sensing signal output terminal Vout due to the leakage current is avoided, and the temperature sensing accuracy of the temperature sensing element 100 is further improved.
Fig. 7 is a schematic diagram of detection sensitivity of a different temperature sensor according to an embodiment of the present application. Referring to fig. 7, fig. 7 illustrates output voltage standard values of the temperature sensing element of 4T, the temperature sensing element of 4T1C, and the temperature sensing element of 5T1C as a temperature change curve. Wherein T is the number of transistors and C is the number of storage capacitors. Referring to fig. 7, the voltage variation range of the temperature sensing element of 4T is the smallest in the unit temperature interval, and its capability of temperature separation is weak and detection sensitivity is low. In a unit temperature interval, the voltage change range of the temperature sensing element of the 4T1C is larger due to the storage capacitor C, the temperature sensing element has obviously enhanced temperature separation capability, and the detection sensitivity is higher. In the unit temperature interval, the temperature sensing element of 5T1C is provided with the storage capacitor C and the voltage stabilizing unit 4, so that the voltage variation range of the temperature sensing element of 5T1C is the largest, the temperature distinguishing capability is the strongest, and the detection sensitivity is the highest.
In addition, the temperature sensor of 5T1C can detect a temperature difference within 5 ℃ per unit time. Illustratively, the temperature sensing element 100 of 5T1C can correspond to different voltage values for the temperature of 48 ℃, 49 ℃, 50 ℃, 51 ℃, 52 ℃ within a unit time, so that the temperature value of 48 ℃, 49 ℃, 50 ℃, 51 ℃, 52 ℃ is correspondingly detected according to the voltage values corresponding to the different temperatures, and the sensitivity of the temperature sensing element 100 to temperature detection is further improved.
Fig. 8 is a schematic structural diagram of a first light emitting device according to an embodiment of the present application. On the basis of the above-described embodiments, referring to fig. 8, the light emitting device 200 provided in this embodiment includes: a substrate 101; a driving circuit 102 disposed on one side of the substrate 101 and at least one temperature sensing element 100 provided in any of the above embodiments; at least one light emitting element 103 provided on a side of the temperature sensing element 100 away from the substrate 101, the light emitting element 103 emitting light according to a driving signal of the driving circuit 102; the temperature sensing element 100 is used to detect temperature information of the light emitting element 103.
In particular, the temperature sensing element 100 may be integrated in the light emitting device 200, and the temperature sensing element 100 may be used to sense the temperature of the light emitting device 200. The temperature sensing element 100 can detect temperature information of the light emitting element 103, and thus sense temperature variation of the display device in operation, and can adjust current of the light emitting element 103 based on the temperature variation of the temperature information of the light emitting element 103, thereby improving the operation state and light emitting effect of the light emitting device 200. The light emitting device 200 may be used for illumination, and the present application is not limited in any way.
In an alternative embodiment, with continued reference to fig. 8, the light emitting device 200 may further include an insulating layer 110, an anode 111, and an encapsulation layer 112 sequentially disposed between the driving circuit 102 and the light emitting element 103, and the light emitting element 103 includes an organic functional layer and a cathode.
Fig. 9 is a schematic structural diagram of a second light emitting device according to an embodiment of the present application. On the basis of the above-described embodiment, referring to fig. 9, alternatively, the temperature sensing elements 100 are arranged in one-to-one correspondence with the light emitting elements 103.
Specifically, the arrangement can make each temperature sensing element 100 detect the temperature of one light emitting element 103 correspondingly, so that the temperature state of each light emitting element 103 can be monitored in real time, the working state of each light emitting element 103 can be judged according to the temperature of each light emitting element 103, the working state of each light emitting element 103 of the light emitting device 200 can be regulated in time according to the temperature information of each light emitting element 103, and the light emitting effect and the service life of the light emitting device 200 can be improved.
Fig. 9 illustrates an example of 3×3 light emitting elements 103, and the light emitting elements 103 are connected to the driving voltages VDD11, VDD12, … … and VDD33 and to the power source terminal VSS, which is not limited in any way.
Fig. 10 is a schematic structural diagram of a third light emitting device according to an embodiment of the present application. On the basis of the above embodiment, referring to fig. 10, the light emitting device 200 may optionally further include: the control module 104 is connected with the temperature sensing element 100, and the control module 104 is used for generating a first control instruction according to a voltage signal output by the temperature sensing element 100; the switching circuit 107, the switching circuit 107 is connected to the control module 104, and the switching circuit 107 is configured to be turned on or off according to a first control instruction, so as to adjust the on state of the light emitting element 103.
Specifically, the control module 104 may be a driving chip built in the light emitting device 200, or a peripheral controller, which is not limited herein. By setting the switching circuit 107 to be turned on or off according to the first control instruction, the on state of the light emitting element 103 is adjusted according to the temperature information. Illustratively, the control module 104 generates the first control instruction when the temperature of the light emitting element 103 is too high. The switching circuit 107 is turned off according to the first control instruction, thereby protecting the light emitting device 200 from over-temperature. Illustratively, when the temperature of the light emitting element 103 decreases, the switching circuit 107 is turned on according to the first control instruction, thereby not only protecting the light emitting device 200 from over-temperature, but also adjusting the light emitting luminance of the light emitting device 200.
Fig. 11 is a schematic structural diagram of a fourth light emitting device according to an embodiment of the present application. On the basis of the above embodiment, referring to fig. 9 to 11, optionally, the control module 104 is connected to the driving circuit 102, and the control module 104 is configured to generate a second control instruction according to the voltage signal output by the temperature sensing element 100, where the second control instruction is used to adjust the driving voltage of the driving circuit 102 to adjust the working state of the light emitting element 103.
Specifically, the temperature sensing element 100 may detect the temperature of the light emitting element 103 in real time. The control module 104 is connected to the driving circuit 102, and the control module 104 generates a second control command according to the voltage signal output by the temperature sensor 100. The control module 104 adjusts the driving voltage VDD of the driving circuit 102 according to the second control instruction to adjust the light emitting brightness of the light emitting element 103, thereby improving the lifetime of the light emitting device 200.
Fig. 12 is a schematic structural view of a fifth light emitting device according to an embodiment of the present application. On the basis of the above-described embodiment, referring to fig. 12, alternatively, the temperature sensing element 100 shares the driving clock signal CK and the second voltage signal Vgl with the control module 104.
Specifically, the temperature sensing element 100 may share the control module 104 of the light emitting device 200, for example, the clock signal EN Scan of the driving chip as the driving clock signal CK, and the low level signal VGL of the control module 104 as the second voltage signal VGL. By such arrangement, it is unnecessary to provide a separate driving clock signal CK, simplifying the peripheral circuit of the temperature sensing element 100, making the temperature sensing element 100 easier to apply, and reducing the use cost and the occupied area of the temperature sensing element 100.
Note that fig. 12 exemplarily illustrates a case where the Gate Scan signal Gate of the control module 104 is used as the first power signal Vin, and the reset voltage signal STV of the control module 104 is used as the reset signal Voff, which is not limited herein.
With continued reference to fig. 12, based on the above embodiment, the light emitting device 200 may further include: the calibration module 105 is connected with the temperature sensing element 100, and the calibration module 105 is used for calibrating an output signal of the temperature sensing element 100; and the light emitting module 106 is connected with the control module 104, and the light emitting module 106 is used for responding to the third control instruction and displaying the voltage signal output by the temperature sensing element 100.
Specifically, the calibration module 105 is connected to the temperature sensing element 100, and the calibration module 105 calibrates the output signal of the temperature sensing element 100, so as to further improve the temperature measurement accuracy of the temperature sensing element 100.
Fig. 13 is a schematic structural diagram of a temperature sensing device according to an embodiment of the present application. On the basis of the above embodiment, referring to fig. 13, optionally, a temperature sensing device 300 provided in this embodiment includes: the temperature sensing element 100 according to any of the above embodiments has the beneficial effects of the temperature sensing element 100 according to any of the above embodiments, and will not be described herein.
It should be noted that, when the temperature sensing device 300 is disposed on a flexible substrate, the flexible temperature sensing device may be implemented and may be used for a flexible wearable product. The circuit of the temperature sensing element 100 is realized by a transistor, so that large-area integration can be realized, and a temperature sensing device with a larger area and higher resolution can be obtained.
In addition, the temperature sensing device 300 provided in this embodiment may be used to detect the temperature of the skin surface.
Note that the above is only a preferred embodiment of the present application and the technical principle applied. It will be understood by those skilled in the art that the present application is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the application. Therefore, while the application has been described in connection with the above embodiments, the application is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the application, which is set forth in the following claims.
Claims (12)
1. A temperature sensing element, comprising:
the temperature sensing unit is used for sensing temperature information;
the potential buffer unit is connected with the temperature sensing unit and is used for resetting the potential of the first node;
the induction signal output end is connected with the first node and is used for outputting a voltage signal;
the voltage adjusting unit is connected between the temperature sensing unit and the potential buffer unit and is used for adjusting the amplitude range of the voltage signal output by the sensing signal output end;
the first end of the voltage adjusting unit is used for being connected with a driving clock signal, and the second end of the voltage adjusting unit is connected with the first node;
the voltage adjusting unit comprises a third transistor, a first pole of the third transistor is used for being connected with the driving clock signal, and a second pole of the third transistor and a control end of the third transistor are connected with the first node; the third transistor is used for being turned on or turned off according to the potential of the first node.
2. A temperature sensing element according to claim 1, wherein,
the first end of the temperature sensing unit is used for being connected with a first power supply signal, the second end of the temperature sensing unit and the first end of the potential buffering unit are connected to a first node, the second end of the potential buffering unit is used for being connected with a second voltage signal, and the control end of the potential buffering unit is used for being connected with a reset signal;
the temperature sensing unit comprises at least two first transistors, wherein at least two first transistors are connected in series, and the grid electrode and the source electrode of the same first transistor are connected.
3. The temperature sensing element according to claim 2, wherein the potential buffer unit includes:
and the first electrode of the second transistor is connected with the first node, the second electrode of the second transistor is used for being connected with the second voltage signal, and the control end of the second transistor is used for being connected with the reset signal.
4. The temperature sensing element of claim 2, wherein the voltage adjustment unit comprises:
a storage capacitor connected between the second pole of the third transistor and the control terminal of the third transistor;
the third transistor is used for being turned on or off according to the potential of the first node so as to write the driving clock signal into the storage capacitor.
5. The temperature sensing element of claim 2, further comprising:
the voltage stabilizing unit is connected between the first node and the sensing signal output end and is used for stabilizing the voltage signal output by the sensing signal output end.
6. A light emitting device, comprising:
a substrate;
a drive circuit provided on one side of the substrate and at least one temperature sensing element according to any one of claims 1 to 5;
at least one light-emitting element arranged on one side of the temperature sensing element away from the substrate, wherein the light-emitting element emits light according to a driving signal of the driving circuit;
the temperature sensing element is used for detecting temperature information of the light emitting element.
7. A light-emitting apparatus according to claim 6, wherein,
the temperature sensing elements are arranged in one-to-one correspondence with the light emitting elements.
8. The light-emitting device according to claim 6, further comprising:
the control module is connected with the temperature sensing element and is used for generating a first control instruction according to a voltage signal output by the temperature sensing element;
the switch circuit is connected with the control module and is used for being turned on or off according to the first control instruction so as to adjust the on state of the light-emitting element.
9. A light-emitting apparatus as recited in claim 8, wherein,
the control module is connected with the driving circuit and is used for generating a second control instruction according to the voltage signal output by the temperature sensing element, wherein the second control instruction is used for adjusting the driving voltage of the driving circuit so as to adjust the working state of the light emitting element.
10. A light-emitting apparatus as recited in claim 8, wherein,
the temperature sensing element shares a drive clock signal and a second voltage signal with the control module.
11. The light-emitting device according to claim 8, further comprising:
the calibration module is connected with the temperature sensing element and is used for calibrating a voltage signal output by the temperature sensing element;
the light-emitting module is connected with the control module and is used for responding to a third control instruction and displaying a voltage signal output by the temperature sensing element.
12. A temperature sensing device, comprising: a temperature sensing element as claimed in any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310530823.4A CN116256076B (en) | 2023-05-12 | 2023-05-12 | Temperature sensing element, light emitting device and temperature sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310530823.4A CN116256076B (en) | 2023-05-12 | 2023-05-12 | Temperature sensing element, light emitting device and temperature sensing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116256076A CN116256076A (en) | 2023-06-13 |
| CN116256076B true CN116256076B (en) | 2023-09-05 |
Family
ID=86686474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310530823.4A Active CN116256076B (en) | 2023-05-12 | 2023-05-12 | Temperature sensing element, light emitting device and temperature sensing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116256076B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104361869A (en) * | 2014-10-31 | 2015-02-18 | 京东方科技集团股份有限公司 | Shifting register unit circuit, shifting register, driving method and display device |
| TW201535975A (en) * | 2014-03-10 | 2015-09-16 | Chunghwa Picture Tubes Ltd | Gate driving circuit |
| WO2016161901A1 (en) * | 2015-04-09 | 2016-10-13 | 北京大学深圳研究生院 | Shift register adaptable to negative threshold voltage and unit thereof |
| CN111477172A (en) * | 2020-05-07 | 2020-07-31 | Tcl华星光电技术有限公司 | Pixel driving circuit and display device |
| CN112216249A (en) * | 2020-10-20 | 2021-01-12 | 京东方科技集团股份有限公司 | Gate drive circuit and display device |
| CN112509515A (en) * | 2020-12-24 | 2021-03-16 | 厦门天马微电子有限公司 | Pixel circuit, display panel, display device and ambient light detection method |
| CN215865538U (en) * | 2021-07-19 | 2022-02-18 | 武汉京东方光电科技有限公司 | Temperature sensing element and related equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105469759B (en) * | 2015-12-15 | 2018-10-19 | 深圳市华星光电技术有限公司 | A kind of shift register |
-
2023
- 2023-05-12 CN CN202310530823.4A patent/CN116256076B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201535975A (en) * | 2014-03-10 | 2015-09-16 | Chunghwa Picture Tubes Ltd | Gate driving circuit |
| CN104361869A (en) * | 2014-10-31 | 2015-02-18 | 京东方科技集团股份有限公司 | Shifting register unit circuit, shifting register, driving method and display device |
| WO2016161901A1 (en) * | 2015-04-09 | 2016-10-13 | 北京大学深圳研究生院 | Shift register adaptable to negative threshold voltage and unit thereof |
| CN111477172A (en) * | 2020-05-07 | 2020-07-31 | Tcl华星光电技术有限公司 | Pixel driving circuit and display device |
| CN112216249A (en) * | 2020-10-20 | 2021-01-12 | 京东方科技集团股份有限公司 | Gate drive circuit and display device |
| CN112509515A (en) * | 2020-12-24 | 2021-03-16 | 厦门天马微电子有限公司 | Pixel circuit, display panel, display device and ambient light detection method |
| CN215865538U (en) * | 2021-07-19 | 2022-02-18 | 武汉京东方光电科技有限公司 | Temperature sensing element and related equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116256076A (en) | 2023-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI576742B (en) | Touch sensor integrated display device and method for driving the same | |
| CN104091563B (en) | Image element circuit and driving method, organic electroluminescence display panel and display device | |
| EP2887344B1 (en) | Touch control display driving circuit, driving method thereof and display device | |
| CN108766360B (en) | Display panel driving method and display device | |
| CN102968954B (en) | Organic light emitting diode display device for sensing pixel current and method for sensing pixel current thereof | |
| US9626035B2 (en) | OLED pixel circuit, driving method thereof and display panel | |
| TWI556213B (en) | pixel compensation device and display having current compensation mechanism | |
| US9535531B2 (en) | Active matrix organic light emitting diode pixel unit circuit, display panel and electronic product | |
| JP2020118973A (en) | Electronic device having display that compensates for threshold voltage of oxide transistor | |
| US9645662B2 (en) | Pixel circuit, display panel and display apparatus | |
| KR101022118B1 (en) | light sensor circuit and driving method thereof and Touch Screen Panel having the same | |
| US8704812B2 (en) | Light sensing circuit having a controlled light sensing period or a controlled current output period according to ambient temperature, method of controlling the same, and touch panel comprising the light sensing circuit | |
| CN108615491B (en) | Aging detection circuit, aging compensation module and display panel | |
| CN108962146B (en) | External compensation circuit, compensation method and display device | |
| KR100825411B1 (en) | Ambient light sensor circuit and flat panel device having it | |
| US20210325987A1 (en) | Pixel circuit and drive method thereof, and touch display apparatus | |
| CN107092388B (en) | Touch display device and driving method thereof | |
| CN110969989B (en) | Driving method and control driving method for pixel circuit | |
| JP2008165172A (en) | Ambient light sensing circuit and flat panel display having ambient light sensing circuit | |
| CN106384739A (en) | Organic light emitting display panel, driving method thereof and organic light emitting display device | |
| WO2020034140A1 (en) | A method for driving a pixel circuit with feedback compensation, a circuit for driving a light-emitting device, and a display apparatus | |
| KR102070109B1 (en) | Touch-controlled pixel-drive circuits and methods thereof, touch-controlled display devices | |
| KR20150017076A (en) | Light sensing circuit, light sensing panel and display apparatus having the light sensing panel | |
| CN114446207B (en) | Pixel circuit detection method, display panel, driving method of display panel and display device | |
| KR20200025938A (en) | Controller, organic light emitting display device, and driving method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |