CN116253284A - Wafer-level packaged thermal MEMS flow sensor chip and manufacturing method thereof - Google Patents

Wafer-level packaged thermal MEMS flow sensor chip and manufacturing method thereof Download PDF

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Publication number
CN116253284A
CN116253284A CN202211658717.6A CN202211658717A CN116253284A CN 116253284 A CN116253284 A CN 116253284A CN 202211658717 A CN202211658717 A CN 202211658717A CN 116253284 A CN116253284 A CN 116253284A
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China
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wafer
chip
flow sensor
silicon
sensor chip
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CN202211658717.6A
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Chinese (zh)
Inventor
刘智辉
李子旭
李玉玲
于海超
刘志远
顾博
陈冬卅
吴双宇
姜晓龙
柳微微
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CETC 49 Research Institute
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CETC 49 Research Institute
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Priority to CN202211658717.6A priority Critical patent/CN116253284A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Volume Flow (AREA)

Abstract

A wafer-level packaged thermal MEMS flow sensor chip and a manufacturing method thereof relate to the technical field of sensors. The invention aims to solve the problems of poor replaceability and poor measurement precision of the traditional thermal MEMS flow sensor. The wafer-level packaged thermal MEMS flow sensor chip is provided with a channel component on the surface of the chip through a wafer-level bonding process, and an airflow channel is formed between the channel component and the resistor of the chip. And the air flow channel is manufactured by adopting an MEMS (micro-electromechanical systems) process, and is integrally mounted on the chip by adopting an advanced MEMS wafer-level bonding process, so that the section processing error and the mounting error of the air flow channel are reduced from millimeter level to micrometer level.

Description

Wafer-level packaged thermal MEMS flow sensor chip and manufacturing method thereof
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a package of an MEMS flow sensor.
Background
Microelectromechanical Systems (MEMS) technology is a research hotspot in China at present, and a thermal MEMS flow sensor comprises a sensitive chip (hereinafter referred to as a chip), a chip mounting board and an air flow channel fixed on the chip mounting board.
The chip generally comprises a chip frame, and heating resistors and temperature measuring resistors which are suspended on the upper surface of the center of the chip frame, wherein the two temperature measuring resistors are distributed on two sides of the heating resistors. The heating resistors and the two temperature measuring resistors are distributed in parallel, and the distribution direction is perpendicular to the air flow direction. The chip manufactured by the MEMS technology has the characteristics of mature processing technology, good compatibility with the semiconductor technology, easy batch manufacturing, good performance consistency, high measurement precision and the like.
The air flow channel of the existing thermal MEMS flow sensor is usually formed by adopting an injection molding process, and is fixed on the chip mounting plate through an adhesive. The method is limited by processing errors, injection molding process deviations, fixed installation deviations of a die, and the existing airflow channels have the defects of poor dimensional consistency, large thermal deformation and the like, so that the problems of poor sensor replacement, poor measurement precision and the like caused by different sectional areas of the airflow channels of different sensors are solved, and the requirements of the fields of aerospace, precise instruments, chemical engineering research and the like on the high-precision airflow sensor are not met.
Disclosure of Invention
The invention aims to solve the problems of poor replaceability and poor measurement precision of the traditional thermal MEMS flow sensor, and provides a wafer-level packaged thermal MEMS flow sensor chip and a manufacturing method thereof.
The wafer-level packaged thermal MEMS flow sensor chip is provided with a channel member 6 on the surface of the chip through a wafer-level bonding process, and an airflow channel is formed between the channel member 6 and the resistor of the chip.
Further, the section of the airflow channel is rectangular, circular arc or streamline.
Further, the material of the channel member 6 is a silicon wafer or a glass wafer.
Further, the chip includes: the silicon nitride chip comprises a monocrystalline silicon wafer 1, a silicon oxide layer 2, a silicon nitride layer 3, a resistor 4 and an electrode 5, wherein the silicon oxide layer 2 covers the upper side and the lower side of the monocrystalline silicon wafer 1, the silicon nitride layer 3 covers the surface of the silicon oxide layer 2, the monocrystalline silicon wafer 1, the silicon oxide layer 2 and the silicon nitride layer 3 form a chip frame, a release through hole is formed in the bottom of the chip frame, the resistor 4 is arranged on the silicon nitride layer 3 at the top of the chip frame, and the electrode 5 is used for leading out an electric signal of the resistor 4.
Further, the monocrystalline silicon piece 1 is a monocrystalline silicon piece with double-side polishing, the thickness of the silicon oxide layer 2 is 10000nm, and the thickness of the silicon nitride layer 3 is 200nm.
Further, the material of the resistor 4 is titanium or platinum, and the thickness of the resistor 4 is 500nm.
Further, the material of the electrode 5 is gold, and the thickness of the electrode 5 is 100nm.
The manufacturing method of the wafer-level packaged thermal MEMS flow sensor chip comprises the steps of processing even airflow channels on a silicon wafer or a glass wafer material through photoetching, etching or corrosion technology, and bonding channel components 6 on the surface of the chip through a wafer-level bonding technology, so that the resistance of the chip is located in the airflow channels.
Further, the preparation method of the chip comprises the following steps:
preparing a silicon oxide layer 2 on two sides of a monocrystalline silicon piece 1 by a thermal oxidation mode, and then preparing a silicon nitride layer 3 on the surface of the silicon oxide layer 2 by a low-pressure chemical vapor deposition method;
depositing a titanium/platinum film on the silicon nitride layer 3 on the upper surface in a magnetron sputtering mode, and manufacturing the titanium/platinum film into a heating/temperature measuring resistor through photoetching or etching technology;
depositing a gold film on the titanium/platinum film by means of thermal evaporation, and preparing an electrode 5 by photoetching or etching;
the release region and the bonding region, and the silicon oxide layer 2 and the silicon nitride layer 3 on the back side of the silicon wafer are removed by photolithography or etching process.
The invention provides a wafer-level packaged high-precision MEMS flow sensor chip, which adopts an MEMS technology to manufacture an airflow channel, and adopts an advanced MEMS wafer-level bonding technology to integrally mount the airflow channel on the chip, so that the processing error and the mounting error of the section of the airflow channel are reduced from millimeter level to micrometer level. The wafer-level manufacturing method provided by the invention is suitable for batch manufacturing, and solves the problems of poor replaceability, poor measurement accuracy and the like of the traditional thermal MEMS flow sensor.
Based on the current mainstream 6-inch wafer, under the condition that the chip area is 4mm multiplied by 4mm, 1000 sensor chips can be manufactured at the same time by Shan Zhangjing circles, 1000 airflow channels can be installed at the same time, and the machining error and the installation error can be below 10 micrometers.
Drawings
FIG. 1 is a block diagram of a wafer level high precision MEMS flow sensor chip;
fig. 2 is a process flow diagram of a wafer level high precision MEMS flow sensor chip.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
The first embodiment is as follows: referring to fig. 1, a thermal MEMS flow sensor chip of a wafer level package according to the present embodiment is specifically described, and a channel member 6 is provided on a surface of the chip by a wafer level bonding process, and an air flow channel is formed between the channel member 6 and a resistor of the chip. The section of the air flow channel is rectangular, circular arc-shaped or streamline-shaped. The material of the channel member 6 is a silicon wafer or a glass wafer.
The chip comprises: a monocrystalline silicon piece 1, a silicon oxide layer 2, a silicon nitride layer 3, a resistor 4 and an electrode 5. The silicon oxide layer 2 covers the upper side and the lower side of the monocrystalline silicon piece 1, the silicon nitride layer 3 covers the surface of the silicon oxide layer 2, the monocrystalline silicon piece 1, the silicon oxide layer 2 and the silicon nitride layer 3 form a chip frame, a release through hole is formed in the bottom of the chip frame, the resistor 4 is arranged on the silicon nitride layer 3 at the top of the chip frame, and the electrode 5 is used for leading out an electric signal of the resistor 4. The monocrystalline silicon wafer 1 is a monocrystalline silicon wafer with double-sided polishing, the thickness of the silicon oxide layer 2 is 10000nm, and the thickness of the silicon nitride layer 3 is 200nm. The material of the resistor 4 is titanium or platinum, and the thickness of the resistor 4 is 500nm. The material of the electrode 5 is gold, and the thickness of the electrode 5 is 100nm.
The present embodiment may be arranged in an array as a measurement unit to improve measurement accuracy or to improve redundancy.
The second embodiment is as follows: referring to fig. 2, a method for manufacturing a wafer-level packaged thermal MEMS flow sensor chip according to the present embodiment will be described in detail,
(a) Selecting a double-sided polished monocrystalline silicon wafer 1, cleaning the monocrystalline silicon wafer 1, preparing a silicon oxide layer 2 on two sides of the monocrystalline silicon wafer 1 in sequence in a thermal oxidation mode, and preparing a silicon nitride layer 3 on the surface of the silicon oxide layer 2 by a low-pressure chemical vapor deposition method; the thickness of the silicon oxide layer 2 is 10000nm, and the thickness of the silicon nitride layer 3 is 200nm.
(b) Depositing a titanium/platinum film with the thickness of 500nm on the silicon nitride layer 3 on the upper surface in a magnetron sputtering mode, and manufacturing the titanium/platinum film into a heating/temperature measuring resistor through photoetching or etching technology; and then a gold film with the thickness of 100nm is deposited on the titanium/platinum film by a thermal evaporation mode, and the electrode 5 is prepared by photoetching or etching technology.
(c) Removing the release area and the bonding area, and the silicon oxide layer 2 and the silicon nitride layer 3 on the back surface of the silicon wafer through photoetching or etching process; and the release of the heating/temperature measuring resistor is completed through double-sided alignment photoetching and etching processes.
(d) The even gas flow channels are fabricated on the silicon wafer or glass wafer material by photolithography, etching, or etching processes.
(e) The channel member 6 is bonded on the surface of the chip by a wafer-level bonding technology, so that the resistor of the chip is positioned in the airflow channel, and the assembly of the airflow channel and the heating/temperature measuring resistor is realized.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features described herein may be combined in ways other than as described in the original claims. It is also to be understood that features described in connection with separate embodiments may be used in other described embodiments.

Claims (9)

1. The wafer-level packaged thermal MEMS flow sensor chip is characterized in that a channel component (6) is arranged on the surface of the chip through a wafer-level bonding process, and an airflow channel is formed between the channel component (6) and the resistor of the chip.
2. The wafer level packaged thermal MEMS flow sensor chip of claim 1, wherein the airflow channel is rectangular, circular arc or streamline in cross-section.
3. Wafer-level packaged thermal MEMS flow sensor chip according to claim 1 or 2, characterized in that the material of the channel member (6) is a silicon wafer or a glass wafer.
4. A wafer level packaged thermal MEMS flow sensor chip according to claim 3, wherein the chip comprises: a monocrystalline silicon piece (1), a silicon oxide layer (2), a silicon nitride layer (3), a resistor (4) and an electrode (5),
the silicon oxide layer (2) covers the upper side and the lower side of the monocrystalline silicon piece (1), the silicon nitride layer (3) covers the surface of the silicon oxide layer (2), the monocrystalline silicon piece (1), the silicon oxide layer (2) and the silicon nitride layer (3) form a chip frame, a release through hole is formed in the bottom of the chip frame, the resistor (4) is arranged on the silicon nitride layer (3) at the top of the chip frame, and the electrode (5) is used for leading out an electric signal of the resistor (4).
5. The wafer level packaged thermal MEMS flow sensor chip of claim 4, wherein the monocrystalline silicon piece (1) is a double-sided polished monocrystalline silicon piece, the silicon oxide layer (2) has a thickness of 10000nm, and the silicon nitride layer (3) has a thickness of 200nm.
6. The wafer level packaged thermal MEMS flow sensor chip of claim 4, wherein the material of the resistor (4) is titanium or platinum, and the thickness of the resistor (4) is 500nm.
7. The wafer level packaged thermal MEMS flow sensor chip of claim 4, wherein the material of the electrode (5) is gold and the thickness of the electrode (5) is 100nm.
8. The manufacturing method of the wafer-level packaged thermal MEMS flow sensor chip is characterized in that an even airflow channel is processed on a silicon wafer or a glass wafer material through photoetching, etching or corrosion technology,
the channel member (6) is bonded to the chip surface by wafer level bonding techniques such that the resistance of the chip is located in the air flow channel.
9. The method for fabricating a wafer level packaged thermal MEMS flow sensor chip of claim 8, wherein the method for fabricating the chip comprises:
preparing a silicon oxide layer (2) on two sides of a monocrystalline silicon piece (1) by a thermal oxidation mode, and then preparing a silicon nitride layer (3) on the surface of the silicon oxide layer (2) by a low-pressure chemical vapor deposition method;
depositing a titanium/platinum film on the silicon nitride layer (3) on the upper surface in a magnetron sputtering mode, and manufacturing the titanium/platinum film into a heating/temperature measuring resistor through photoetching or etching technology;
depositing a gold film on the titanium/platinum film by means of thermal evaporation, and preparing an electrode (5) by means of photoetching or etching;
the release area and the bonding area, and the silicon oxide layer (2) and the silicon nitride layer (3) on the back surface of the silicon wafer are removed through photoetching or etching technology.
CN202211658717.6A 2022-12-22 2022-12-22 Wafer-level packaged thermal MEMS flow sensor chip and manufacturing method thereof Pending CN116253284A (en)

Priority Applications (1)

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CN202211658717.6A CN116253284A (en) 2022-12-22 2022-12-22 Wafer-level packaged thermal MEMS flow sensor chip and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211658717.6A CN116253284A (en) 2022-12-22 2022-12-22 Wafer-level packaged thermal MEMS flow sensor chip and manufacturing method thereof

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CN116253284A true CN116253284A (en) 2023-06-13

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