CN116252111A - Precise machining method of semiconductor wafer sucker - Google Patents
Precise machining method of semiconductor wafer sucker Download PDFInfo
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- CN116252111A CN116252111A CN202310543235.4A CN202310543235A CN116252111A CN 116252111 A CN116252111 A CN 116252111A CN 202310543235 A CN202310543235 A CN 202310543235A CN 116252111 A CN116252111 A CN 116252111A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a precision machining method of a semiconductor wafer sucker, which comprises the following steps: s1: cutting refined materials; s2: tempering; s3: CNC machining; s4: coarsely grinding the thickness; s5: finely grinding the thickness for the first time; s6: carrying out natural-color hard oxidation; s7: secondary fine grinding thickness; s8: cleaning and packaging. Aiming at the problem that the common milling and grinding process of the high-precision wafer sucker part cannot ensure the flatness requirement, after tempering at a specified temperature to eliminate the internal stress of the material, the opposite surfaces are finely milled, roughly ground and ground, the surface hardness of the wafer sucker part is improved through hard anodic oxidation, and then the excessive oxide layer is removed through grinding for the first time, so that the flatness precision requirement and the parallelism requirement of the wafer sucker part are ensured; after finish milling, the opposite surfaces of the front and back surfaces are repeatedly ground so as to ensure the surface roughness requirement of the part; tempering is firstly carried out to eliminate internal stress of the material, milling and grinding are then carried out, and then surface treatment is carried out, so that the external dimension requirement of the material is ensured by the grinding process.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a precise machining method of a semiconductor wafer chuck.
Background
The semiconductor has wide application in the fields of electronic products, 5G communication, aerospace, medical instruments, artificial intelligence, new energy and the like. The importance of semiconductors is enormous, both from a technological and an economic point of view. Most electronic products today, such as computers, smart phones or tablet computers, have a core unit that is very closely related to semiconductors. The invention relates to an aluminum alloy wafer sucker which is a core part for high-precision semiconductor equipment and is used for bearing a semiconductor wafer, and the aluminum alloy wafer sucker has high requirements on flatness and parallelism and surface roughness. The precision machining of the high-precision sucker metal parts is always a difficult problem in the field of machining, and along with the discovery of new materials and the continuous practical perfection of the machining process, the precise cutting and grinding machining thought of the high-precision sucker metal parts is clearer.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a precise processing method of a semiconductor wafer sucker, which has the advantage of high processing accuracy.
In order to achieve the above purpose, the present invention provides the following technical solutions: a precise processing method of a semiconductor wafer chuck comprises the following steps:
s1: cutting the large-size plate into blank materials by cutting the fine materials;
s2: tempering, namely eliminating material stress generated during cutting;
s3: CNC processing is carried out on the thickness of a workpiece, milling an outer circle to form a disc structure, drilling a bottom hole, milling an air groove on the front surface of the disc, vertically drilling an air passage from the outer circumference of the disc to the circle center, vertically drilling at least one non-penetrating guide hole on the disc at each air groove position, conducting the other end of each guide hole with the air passage, and carrying out preliminary processing on blank materials to obtain a rough blank
S4: grinding the thickness of the rough blank for three times, and controlling the planeness of the surface of the rough blank;
s5: fine grinding thickness for the first time, carrying out fine grinding on the thickness of the rough blank for three times, and improving grinding precision by reducing single grinding feeding amount;
s6: forming a protective layer on the surface of the rough blank by the hard oxidation of the natural color;
s7: the secondary fine grinding thickness is divided into three grinding steps, the feeding amount of single grinding is further reduced, and the parallelism and thickness of the rough blank are controlled in the grinding process;
s8: cleaning and packaging.
Preferably, the material and the size of the fine material in the step S1 are required to meet the requirements, and the fine material has no adverse conditions such as bruise, scratch, bruise, deformation, bending, rust and the like.
Preferably, the specific contents of tempering in S2 are: tempering is carried out for 10 hours, the furnace heat is 260 ℃, natural cooling is carried out, and single piece is put during tempering, so that tempering uniformity is ensured.
Preferably, the specific contents of CNC processing in S3 are: the processing thickness is 14mm to 12.4mm, and the flatness is ensured to be 0.05mm; milling an outer circle to phi 168mm plus or minus 0.1mm, drilling a bottom hole, and processing two fine holes until the upper deviation is phi 10.08mm, wherein the peripheral chamfer C of the outer circle of the front side and the back side is 0.3mm-C0.5mm; the reverse side is processed and positioned by a positioning hole, the depth of a milling air groove is 0.6MM, and 0.05MM is needed to be added for the subsequent surface treatment oxidation, so that the milling air groove is milled to the corresponding size, a guide hole is drilled, and the drilling hole is needed to penetrate through to an air passage.
Preferably, the specific content of the rough grinding in S4 is: the symmetrical grinding thickness is 12.40mm to 12.35mm, the flatness is 0.005mm when three-dimensional measurement is performed, the accurate grinding thickness is 12.30mm, and the final thickness flatness is not more than 0.005mm.
Preferably, the specific content of the first grinding thickness in S5 is: firstly grinding the workpiece with the thickness of 12.30mm to 12.20mm, detecting the flatness by 0.005mm, then grinding the workpiece with the thickness of 12.20mm to 12.10mm, detecting the flatness by 0.005mm, and then grinding the workpiece with the thickness of 12.10mm to 12.00mm, wherein the workpiece with the flatness by 0.005mm cannot be scratched in any process.
Preferably, the specific content of the natural color hard oxidation in S6 is: the hardness of the natural-color hard oxide is between 90 and 100um, the hardness is up to 210HB, and the plugged holes of M5 tooth holes and phi 10 fine holes cannot be scratched.
Preferably, the thickness in the step S7 is specifically that the grinding thickness is 12.05mm, the detection flatness is 0.005mm, and the surface of the workpiece cannot be scratched; grinding thickness is 12.05mm to 12.00mm, detecting flatness is 0.005mm, parallelism is 0.01mm, thickness is 12mm plus or minus 0.02mm, surface roughness Ra0.8 is achieved, and no scratch can be formed on the surface of a workpiece.
Preferably, the specific content of the cleaning and packaging in S8 is: quality personnel carry out full inspection according to the dimension of the drawing and the requirement, and package and shipment are carried out according to the package requirement.
Compared with the prior art, the invention has the following beneficial effects:
aiming at the problem that the common milling and grinding processing technology of the high-precision wafer sucker part cannot ensure the flatness requirement, after the internal stress of the material is eliminated by tempering at a specified temperature, the opposite surfaces are finely milled, roughly ground and ground, the surface hardness of the wafer sucker part is improved by hard anodic oxidation, and then the excessive oxide layer is removed by grinding for the second time, so that the flatness precision requirement and the parallelism requirement of the wafer sucker part are ensured; after finish milling, the opposite surfaces of the front and back surfaces are repeatedly ground so as to ensure the surface roughness requirement of the part; tempering is firstly carried out to eliminate internal stress of the material, milling and grinding are then carried out, and then surface treatment is carried out, so that the overall processing technology of grinding is carried out, and the requirement on the external dimension of the material is ensured.
Drawings
FIG. 1 is a flow chart of the method of the present invention;
FIG. 2 is a schematic view of the back of a chuck made by the method of the present invention;
FIG. 3 is a schematic front and back view of a method of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present invention provides a technical solution: a precise processing method of a semiconductor wafer chuck comprises the following steps:
s1: cutting the large-size plate into blank materials by cutting the fine materials;
s2: tempering, namely eliminating material stress generated during cutting;
s3: CNC machining, namely machining the thickness of a workpiece, milling an outer circle to form a disc structure, drilling a bottom hole 10, milling an air groove A on the front surface of the disc, vertically drilling an air passage B from the outer circumference of the disc to the circle center, vertically drilling at least one non-penetrating guide hole 40 in each air groove A, conducting the other end of each guide hole 40 with the air passage 50, and primarily machining a blank material to obtain a rough blank;
s4: grinding the thickness of the rough blank for three times, and controlling the planeness of the surface of the rough blank;
s5: fine grinding thickness for the first time, carrying out fine grinding on the thickness of the rough blank for three times, and improving grinding precision by reducing single grinding feeding amount;
s6: forming a protective layer on the surface of the rough blank by the hard oxidation of the natural color;
s7: the secondary fine grinding thickness is divided into three grinding steps, the feeding amount of single grinding is further reduced, and the parallelism and thickness of the rough blank are controlled in the grinding process;
s8: cleaning and packaging.
The quality of the processed raw materials directly influences the quality of the processed finished product, and if the quality does not reach the standard, the processed raw materials are extremely easy to damage the workpiece due to the action of processing stress in the processing process, so that waste materials are generated and the processing efficiency is influenced.
As shown in fig. 2 and 3, the specific contents of tempering in S2 are: firstly tempering for 10 hours, heating to 260 ℃ and naturally cooling, placing single pieces during tempering, ensuring uniform tempering, eliminating stress generated in workpiece processing for stabilizing tissues, improving mechanical properties of the workpieces, ensuring that the workpieces can be better adapted to working procedures in subsequent processing, ensuring that the single pieces are placed without blocking among the workpieces, and ensuring tempering effect of the workpieces during tempering.
The specific content of CNC processing in the step S3 is as follows: the processing thickness is 14mm to 12.4mm, and the flatness is ensured to be 0.05mm; milling the outer circle to phi 168mm plus or minus 0.1mm, drilling a bottom hole 10, machining two fine holes 20 until the upper deviation is phi 10.08mm, and chamfering the peripheries of the front and back outer circles by C0.3mm-C0.5mm, wherein the bottom hole 10 is the bottom hole phi 4.2mm in size; the back surface is processed by using a positioning hole 30, the positioning hole phi 10MM, a pressing plate is adopted for fixing in the processing process, the pressure injury is prevented, the depth of a milling air groove A is 0.6MM, and 0.05MM is needed to be added for the subsequent surface treatment oxidation amount, so that the milling air groove A is used for drilling a guide hole 40 to the corresponding size, the guide hole phi 5.5 MM/phi 9MM, the depth of the guide hole is 7MM, phi 1.5MM, the guide hole 40 is required to penetrate into an air passage B, and the precision of a processed workpiece can be ensured by adopting a fine processing and gradually increasing processing mode, and the product quality is improved.
The specific content of the rough grinding in the step S4 is as follows: the symmetrical grinding thickness is 12.40mm to 12.35mm, the flatness is 0.005mm in three-dimensional measurement, the accurate grinding thickness is 12.30mm, the flatness of the final thickness is not more than 0.005mm, the possibility of error generation can be reduced through repeated grinding, the stability of the flatness of the final thickness is further guaranteed, and the accuracy of machining is guaranteed.
The specific content of the first grinding thickness in S5 is: firstly grinding the workpiece with the thickness of 12.30mm to 12.20mm, detecting the flatness by 0.005mm, then grinding the workpiece with the thickness of 12.20mm to 12.10mm, detecting the flatness by 0.005mm, and then grinding the workpiece with the thickness of 12.10mm to 12.00mm, wherein the surface of the workpiece cannot be scratched in any process, and the specific content of the secondary grinding thickness in the step S7 is that the grinding thickness is 12.05mm, the detecting flatness is 0.005mm, and the surface of the workpiece cannot be scratched in any way; grinding thickness is 12.05mm to 12.00mm, detecting flatness is 0.005mm, parallelism is 0.01mm, thickness is 12mm plus or minus 0.02mm, surface roughness Ra0.8 is achieved, the surface of a workpiece cannot be scratched, grinding is repeated for a plurality of times and a small amount, accuracy of machining the workpiece can be improved, errors of size caused by excessive grinding are prevented, the surface of the workpiece needs to be guaranteed to be intact in the machining process, no defect can occur, and quality of a finished workpiece can be affected.
The specific content of the natural color hard oxidation in the S6 is as follows: the hardness of the natural-color hard oxidation is between 90um and 100um, the hardness is up to 210HB, the M5 tooth hole is blocked, the phi 10 fine hole is blocked, the scratch cannot be caused, the hard oxidation is an effective protection means for metal, the protection performance of a workpiece is improved, and the service life of the workpiece is prolonged.
The specific content of the cleaning and packaging in the step S8 is as follows: quality personnel carry out full inspection according to the dimension of the drawing and the requirement, and package and shipment are carried out according to the package requirement.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A precision machining method of a semiconductor wafer chuck is characterized by comprising the following steps of: the precise processing steps of the semiconductor wafer sucker are as follows:
s1: cutting the large-size plate into blank materials by cutting the fine materials;
s2: tempering, namely eliminating material stress generated during cutting;
s3: CNC machining is carried out, the thickness of a workpiece is machined, an outer circle is milled to form a disc structure, a bottom hole is drilled, air grooves are milled on the front surface of the disc, an air passage is vertically drilled from the outer circumference of the disc to the circle center, at least one non-penetrating guide hole is vertically drilled in each air groove position in the disc, the other end of each guide hole is communicated with the air passage, and a blank material is subjected to preliminary machining to obtain a rough blank;
s4: grinding the thickness of the rough blank for three times, and controlling the planeness of the surface of the rough blank;
s5: fine grinding thickness for the first time, carrying out fine grinding on the thickness of the rough blank for three times, and improving grinding precision by reducing single grinding feeding amount;
s6: forming a protective layer on the surface of the rough blank by the hard oxidation of the natural color;
s7: the secondary fine grinding thickness is divided into three grinding steps, the feeding amount of single grinding is further reduced, and the parallelism and thickness of the rough blank are controlled in the grinding process;
s8: cleaning and packaging.
2. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the material and the size of the fine material in the step S1 are required to meet the requirements, and the problems of bruise, scratch, bruise, deformation, bending and corrosion are avoided.
3. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the specific content of tempering in the step S2 is as follows: tempering is carried out for 10 hours, the furnace heat is 260 ℃, natural cooling is carried out, and single piece is put during tempering, so that tempering uniformity is ensured.
4. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the specific content of CNC processing in the step S3 is as follows: the processing thickness is 14mm to 12.4mm, and the flatness is ensured to be 0.05mm; milling an outer circle, drilling a bottom hole, machining two fine holes, and chamfering the peripheries of the front and back outer circles; and (3) machining a positioning hole for positioning the back surface, milling an air groove, drilling a guide hole, and penetrating the guide hole to the air passage.
5. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the specific content of the rough grinding in the step S4 is as follows: the symmetrical grinding thickness is 12.40mm to 12.35mm, the flatness is 0.005mm when three-dimensional measurement is performed, the accurate grinding thickness is 12.30mm, and the final thickness flatness is not more than 0.005mm.
6. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the specific content of the first grinding thickness in the step S5 is as follows: firstly grinding the workpiece with the thickness of 12.30mm to 12.20mm, detecting the flatness by 0.005mm, then grinding the workpiece with the thickness of 12.20mm to 12.10mm, detecting the flatness by 0.005mm, and then grinding the workpiece with the thickness of 12.10mm to 12.00mm, wherein the workpiece with the flatness by 0.005mm cannot be scratched in any process.
7. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the specific content of the natural color hard oxidation in the S6 is as follows: the hardness of the natural-color hard oxide is between 90 and 100um, the hardness is up to 210HB, and the plugged holes of M5 tooth holes and phi 10 fine holes cannot be scratched.
8. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the specific content of the secondary grinding thickness in the step S7 is that the grinding thickness is 12.05mm, the detection flatness is 0.005mm, and the surface of the workpiece cannot be scratched; grinding thickness is 12.05mm to 12.00mm, detecting flatness is 0.005mm, parallelism is 0.01mm, thickness is 12mm plus or minus 0.02mm, surface roughness Ra0.8 is achieved, and no scratch can be formed on the surface of a workpiece.
9. The method for precisely processing the semiconductor wafer chuck according to claim 1, wherein: the cleaning and packaging in the step S8 comprises the following specific contents: quality personnel carry out full inspection according to the dimension of the drawing and the requirement, and package and shipment are carried out according to the package requirement.
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| CN202310543235.4A CN116252111A (en) | 2023-05-15 | 2023-05-15 | Precise machining method of semiconductor wafer sucker |
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