CN116248067A - Tuning method of bulk acoustic wave resonator - Google Patents

Tuning method of bulk acoustic wave resonator Download PDF

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Publication number
CN116248067A
CN116248067A CN202310229595.7A CN202310229595A CN116248067A CN 116248067 A CN116248067 A CN 116248067A CN 202310229595 A CN202310229595 A CN 202310229595A CN 116248067 A CN116248067 A CN 116248067A
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Prior art keywords
acoustic wave
bulk acoustic
piezoelectric film
wave resonator
polar
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Inventor
赵佳
母志强
俞文杰
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H2009/02165—Tuning
    • H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention provides a tuning method of a bulk acoustic wave resonator, which comprises the following steps: the piezoelectric film comprises n layers of polar piezoelectric films, and the polarities of any two adjacent layers of polar piezoelectric films are opposite, wherein n is more than or equal to 2; the number of layers of the polar piezoelectric film of different polarities is changed by fixing the total thickness of the piezoelectric film. The more the number of layers of the polar piezoelectric film is, the higher-order resonant mode can be excited, and the larger the resonant frequency is; the tuning method of the bulk acoustic wave resonator utilizes layering to prepare a piezoelectric film with opposite polarities, improves the resonant frequency of the resonator under the condition of not reducing the total thickness of the piezoelectric film or introducing a transition electrode, excites a higher-order resonant mode, simplifies the process, reduces the requirements on the process and equipment, and improves the working frequency of the filter.

Description

Tuning method of bulk acoustic wave resonator
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to a tuning method of a bulk acoustic wave resonator.
Background
With the development of wireless communication technology, electronic technology has advanced toward 5G and toward smaller, lighter, and thinner technologies. Piezoelectric Radio Frequency (RF) microelectromechanical systems (MEMS) resonators have been used as front-ends for RF systems to achieve frequency selection and interference rejection functions, with the principle of operation being to utilize piezoelectric films to achieve conversion of mechanical and electrical energy.
Currently, wireless data transmission requires that the radio frequency filter has an operating frequency of 5GHz or higher, and filters used in 5G communication are mainly bulk acoustic wave filters (Bulk Acoustic Wave, BAW) and surface acoustic wave filters (Surface Acoustic Wave, SAW). The BAW device has extremely high Q value (over 4000), the range of the working frequency band is 100 MHz-20 GHz, and the BAW device has the advantages of high working frequency, low insertion loss, high frequency selection characteristic, high power capacity, strong antistatic capability and the like, and is an optimal solution for the radio frequency front end in the future.
Since the resonance frequency of the conventional single-layer bulk acoustic wave resonator is positively correlated with the ratio of the longitudinal acoustic velocity to the film thickness, this means that the thickness of the filter piezoelectric film applied at the higher frequency band of 5G will be smaller, and the requirements on the film crystal quality and the process accuracy are higher. Some other solutions exist that involve using a stack of ferroelectric materials and tuning the polarity of the material with the application of a bias voltage, but this approach requires the growth of transition electrodes between the different layers of ferroelectric material for the application of a bias voltage, and either the degradation of crystal quality or the introduction of transition electrodes results in a degradation of the power handling capability, electromechanical coupling coefficient and Q-value of the thin film resonator.
It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art, and is not to be construed as merely illustrative of the background art section of the present application.
In view of the foregoing, it is desirable to provide a tuning method for a bulk acoustic wave resonator that increases the frequency of the resonator to solve the problems of reduced power handling capability, electromechanical coupling coefficient, and Q value of the thin film resonator in the prior art.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a tuning method of a bulk acoustic wave resonator, which increases the frequency of the resonator, so as to solve the problems of the prior art that the power handling capability, the electromechanical coupling coefficient and the Q value of the thin film resonator are reduced.
To achieve the above and other related objects, the present invention provides a tuning method of a bulk acoustic wave resonator, the bulk acoustic wave resonator including a piezoelectric film, and a first electrode and a second electrode disposed on upper and lower surfaces of the piezoelectric film, the tuning method of the bulk acoustic wave resonator including:
the piezoelectric film comprises n layers of polar piezoelectric films, and the polarities of any two adjacent layers of polar piezoelectric films are opposite, wherein n is more than or equal to 2;
the number of layers of the polar piezoelectric film of different polarities is changed by fixing the total thickness of the piezoelectric film.
Optionally, the single-layer thickness of the polar piezoelectric film is not less than 50nm; the total thickness of the piezoelectric film ranges from 100nm to 4000nm.
Alternatively, the thickness of the polar piezoelectric films of different polarities is the same.
Alternatively, the thickness of the polar piezoelectric films of different polarities is different.
Alternatively, the thickness ratio of the different layers is changed by fixing the number of layers of the polar piezoelectric film.
Optionally, the polar piezoelectric film is made of AlN or Al x Ga (1-x) N、Sc x Al (1-x) N、LiNbO 3 、PZT、PbTiO 3 And ZnO, wherein x and y are equal to or greater than 0 and equal to or less than 1.
Alternatively, the materials of the polar piezoelectric thin films of different polarities are the same.
Alternatively, the materials of the polar piezoelectric films of different polarities are different.
Optionally, the material of the first electrode is any one or a combination of two or more of Au, ag, ru, W, mo, ir, al, pt, nb and Hf, and the thickness of the material of the first electrode ranges from 100nm to 300nm.
Optionally, the material of the second electrode is any one or a combination of two or more of Au, ag, ru, W, mo, ir, al, pt, nb and Hf; the thickness of the material of the second electrode ranges from 100nm to 300nm.
As described above, the tuning method of the bulk acoustic wave resonator of the present invention has the following advantageous effects:
the invention provides a tuning method of a bulk acoustic wave resonator, which comprises a piezoelectric film, a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on the upper surface and the lower surface of the piezoelectric film; the tuning method of the bulk acoustic wave resonator utilizes layering to prepare the polar piezoelectric film with opposite polarity, improves the resonant frequency of the resonator under the condition of not reducing the total thickness of the piezoelectric film or introducing a transition electrode, excites a higher-order resonant mode, simplifies the process, reduces the requirements on the process and equipment, and improves the working frequency of the filter.
Drawings
Fig. 1 shows a schematic structure of a bulk acoustic wave resonator according to the present invention.
Fig. 2 shows a graph of COMSOL simulation results for a bulk acoustic wave resonator of the present invention.
FIG. 3 is a schematic diagram showing the structure of the experimental group I of the present invention.
FIG. 4 is a graph showing the results of COMSOL simulation for experimental group one of the present invention.
Fig. 5 shows a schematic structural diagram of a second experimental group of the present invention.
FIG. 6 is a graph showing the results of COMSOL simulation for experimental group two of the present invention.
Fig. 7 shows a schematic structural diagram of the experimental group three of the present invention.
FIG. 8 is a graph showing the results of COMSOL simulation for experimental group three of the present invention.
Description of element reference numerals
11 first electrode
Figure BDA0004119779940000031
22. 25, 28 second polarity piezoelectric film
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one structure or feature's relationship to another structure or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
Please refer to fig. 1 to 8. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
In the traditional single-layer piezoelectric thin-film resonator, as the resonance frequency of the bulk acoustic wave resonator is positively related to the ratio of the longitudinal sound velocity to the thickness of the thin film, the thickness of the piezoelectric thin film of the filter applied in the higher frequency range of 5G is smaller, the requirement on the quality of the thin film crystal is higher, and meanwhile, the power processing capacity, the electromechanical coupling coefficient and the Q value of the thin film BAW resonator are reduced, and other regulation means are required to be searched for to improve the frequency of the resonator; in addition, the related polarity inversion operation is mostly based on the ferroelectricity of materials, electrodes need to be grown between piezoelectric film layers, and the polarity of the materials is regulated and changed by using a bias method, so that the process is too complex and the cost is relatively high.
Based on the above findings and through research and analysis, the inventor provides a tuning method of a bulk acoustic wave resonator, so as to improve the resonance frequency of the resonator under the condition of not reducing the total thickness of a piezoelectric film or introducing a transition electrode, and solve the problems of the prior art that the power processing capacity, the electromechanical coupling coefficient and the Q value of the film resonator are reduced.
Example 1
The present embodiment provides a bulk acoustic wave resonator including:
a piezoelectric film, a first electrode 11 and a second electrode 12 positioned on the upper and lower surfaces of the piezoelectric film;
the piezoelectric film comprises n layers of polar piezoelectric films, and the polarities of any two adjacent layers of polar piezoelectric films are opposite, wherein n is more than or equal to 2.
The bulk acoustic wave resonator comprises a piezoelectric film, a first electrode 11 and a second electrode 12 which are positioned on the upper surface and the lower surface of the piezoelectric film, wherein the piezoelectric film further comprises n layers of polar piezoelectric films, and the higher the number of layers of the polar piezoelectric films is, the higher the resonant mode can be excited, and the higher the resonant frequency is.
As an example, the polar piezoelectric film is made of AlN or Al x Ga (1-x) N、Sc x Al (1-x) N、LiNbO 3 、PZT、PbTiO 3 And ZnO, wherein x and y are equal to or greater than 0 and equal to or less than 1; the single-layer thickness of the polar piezoelectric film is not less than 50nm, for example, 50nm, 100nm, 200nm, 300nm, 400nm, 500nm; the total thickness of the piezoelectric thin film is in the range of 100nm to 4000nm, and may be, for example, 100nm, 500nm, 1000nm, 1500nm, 2000nm, 2500nm, 3000nm, 3500nm, 4000nm.
As shown in fig. 1, in this embodiment, n is 2, that is, the piezoelectric film sequentially includes a first polar piezoelectric film 21 and a second polar piezoelectric film 22, the polarities of the first polar piezoelectric film 21 and the second polar piezoelectric film 22 are opposite, and the materials of the first polar piezoelectric film 21 and the second polar piezoelectric film 22 are both AlN and monocrystalline AlN with opposite polarities, so that the crystal quality of the piezoelectric film can be improved, and the resonance performance of the resonator can be further improved. In this embodiment, the thickness of the single layer of the polar piezoelectric film is 500nm, that is, the thicknesses of the first polar piezoelectric film 21 and the second polar piezoelectric film 22 are 500nm, and the total thickness of the piezoelectric films is 1000nm.
Here, the number n of the polar piezoelectric films may be any number when the total thickness of the piezoelectric films is satisfied, and the materials of each layer of the polar piezoelectric films may be stacked in a regular cycle, or may be stacked in any material, so long as the polarity of any two adjacent layers is guaranteed to be opposite.
As an example, the material of the first electrode 11 may be any one or a combination of two or more of Au, ag, ru, W, mo, ir, al, pt, nb and Hf, and the thickness of the material of the first electrode 11 may range from 100nm to 300nm, for example, from 100nm, 200nm, or 300nm. In this embodiment, mo is preferably used as the material of the first electrode 11, and the thickness is 200nm.
The shape of the first electrode 11 includes, but is not limited to, a regular or irregular shape such as a circle, an ellipse, a square, a polygon, a duck egg shape, etc., and specifically, the shape and the size of the first electrode 11 may be set according to actual needs, which is not limited herein.
As an example, the material of the second electrode 12 may be any one or a combination of two or more of Au, ag, ru, W, mo, ir, al, pt, nb and Hf, and the thickness of the material of the second electrode 12 may be in the range of 100nm to 300nm, for example, 100nm, 200nm, or 300nm. In this embodiment, the material of the second electrode 12 is Mo, and the thickness is 200nm, which is the same as that of the first electrode 11. The second electrode 12 forms a resonator core area with the piezoelectric film and the first electrode 11.
The shape of the second electrode 12 includes, but is not limited to, a regular or irregular shape such as a circle, an ellipse, a square, a polygon, a duck egg shape, etc., and specifically, the shape and the size of the second electrode 12 may be matched according to the actual first electrode 11, which is not limited herein.
Example two
The present embodiment provides a tuning method of a bulk acoustic wave resonator, configured to tune a frequency of the bulk acoustic wave resonator in the first embodiment, where the tuning method of the bulk acoustic wave resonator includes: the number of layers of the polar piezoelectric film of different polarities is changed by fixing the total thickness of the piezoelectric film.
The total thickness of the piezoelectric film is fixed, the number of layers of the polar piezoelectric films with different polarities is changed, and the amplitude of resonance peaks with different orders can be changed. The tuning method of the bulk acoustic wave resonator utilizes layering to prepare the polar piezoelectric film with opposite polarity, improves the resonant frequency of the resonator under the condition of not reducing the total thickness of the piezoelectric film or introducing a transition electrode, excites a higher-order resonant mode, simplifies the process, reduces the requirements on the process and equipment, and improves the working frequency of the filter.
As an example, the thickness of the polar piezoelectric thin films of different polarities is the same, and the materials of the polar piezoelectric thin films of different polarities are the same.
In the first embodiment, the total thickness of the piezoelectric film of the bulk acoustic wave resonator is 1000nm, the thicknesses of the single layers of the first polar piezoelectric film 21 and the second polar piezoelectric film 22 are 500nm, the materials are also AlN with opposite polarities, the thicknesses of the first electrode 11 and the second electrode 12 are 200nm, and the materials are also Mo.
Fig. 2 shows the simulation result of the COMSOL of fig. 1, which shows that the strongest resonance peak of the comparison group is near 6GHz, that is, the working frequency band of the bulk acoustic wave resonator of the comparison group may be near 6 GHz.
Fig. 3 and 4 show the structure of the bulk acoustic wave resonator of the experimental group one and the COMSOL simulation result thereof, wherein the total thickness of the piezoelectric film and the first electrode 11 and the second electrode 12 are the same as those of the comparative group, and the difference is that the piezoelectric film only comprises the first polar piezoelectric film 23 made of AlN. As can be seen from fig. 4, the strongest resonance peak of the first experimental group is around 3GHz, that is, the operating frequency band of the bulk acoustic wave resonator of the comparative group may be around 3 GHz.
Fig. 5 and 6 are results of a bulk acoustic wave resonator structure and a COMSOL simulation thereof in the experimental group two, wherein the total thickness of the piezoelectric thin films and the first electrode 11 and the second electrode 12 are the same as those in the comparative group, and the difference is that the piezoelectric thin films comprise three layers of piezoelectric thin films with the same thickness, wherein the single layers of piezoelectric thin films with the same thickness are approximately 333nm, the materials are AlN, the three layers of piezoelectric thin films are respectively stacked with the first polar piezoelectric thin film 24, the second polar piezoelectric thin film 25 and the first polar piezoelectric thin film 26, and the first polar piezoelectric thin film 24 and the second polar piezoelectric thin film 25 are opposite in polarity, and the second polar piezoelectric thin film 25 and the first polar piezoelectric thin film 26 are opposite in polarity. As can be seen from fig. 6, the strongest resonance peak of the second experimental group is around 18GHz, that is, the operating frequency band of the bulk acoustic wave resonator of the second experimental group may be around 18 GHz.
The strongest resonance peaks of the COMSOL simulation results of the comparison group, the first experimental group and the second experimental group can be known, the working frequency band of the bulk acoustic wave resonator of the first experimental group can be near 3GHz, the working frequency band of the bulk acoustic wave resonator of the comparison group can be near 6GHz, and the working frequency band of the bulk acoustic wave resonator of the second experimental group can be near 18 GHz. The more the number of layers of the polar piezoelectric film of the bulk acoustic wave resonator is, the higher-order resonant mode can be excited, and the larger the resonant frequency is.
As an example, the thickness of the polar piezoelectric thin films of different polarities is different, and the thickness ratio of the different layers is changed by fixing the number of layers of the polar piezoelectric thin films, and the materials of the polar piezoelectric thin films of different polarities are different.
Fig. 7 and 8 show the structure of the bulk acoustic wave resonator of the experimental group III and the results of its COMSOL simulation, wherein the total thickness of the piezoelectric film and the first electrode 11 and the second electrode 12 are the same as those of the comparative group, and the difference is that the piezoelectric film comprises two layers of piezoelectric films with different polarities, respectively 700nm thick, a first polar piezoelectric film 27 made of AlN, 300nm thick, and Sc 0.7 Al 0.3 N second polarity piezoelectric film 28. As can be seen from fig. 8, the strongest resonance peak of the third experimental group is around 6GHz, that is, the operating frequency band of the bulk acoustic wave resonator of the comparative group may be around 6 GHz.
As can be seen from the COMSOL simulation results of the comparison group and the experimental group III, the working frequency band of the bulk acoustic wave resonator of the comparison group can be near 6GHz, and the working frequency band of the bulk acoustic wave resonator of the experimental group III can also be near 6 GHz.
When the thicknesses of the polar piezoelectric films of the bulk acoustic wave resonator are different and the materials are different, the higher the number of layers of the polar piezoelectric films of the bulk acoustic wave resonator is not affected, the higher the order resonance mode can be excited, and the higher the resonance frequency is.
Here, the thicknesses of the different polar piezoelectric films are related to the piezoelectric coefficients of the polar piezoelectric film materials, the number of layers of the polar piezoelectric films can be fixed, the frequency of the corresponding bulk acoustic wave resonator can be finely tuned by properly adjusting the thickness ratio and the materials of the polar piezoelectric films, and the specific thickness ratio and the materials can be set according to actual needs without limitation.
In summary, the present invention provides a tuning method of a bulk acoustic wave resonator, where the tuning method of the bulk acoustic wave resonator includes: the piezoelectric film comprises n layers of polar piezoelectric films, and the polarities of any two adjacent layers of polar piezoelectric films are opposite, wherein n is more than or equal to 2; the number of layers of the polar piezoelectric film of different polarities is changed by fixing the total thickness of the piezoelectric film. The more the number of layers of the polar piezoelectric film is, the more a higher-order resonance mode can be excited, and the larger the resonance frequency is; the tuning method of the bulk acoustic wave resonator utilizes layering to prepare the polar piezoelectric film with opposite polarity, improves the resonant frequency of the resonator under the condition of not reducing the total thickness of the piezoelectric film or introducing a transition electrode, excites a higher-order resonant mode, simplifies the process, reduces the requirements on the process and equipment, and improves the working frequency of the filter.
Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. A tuning method of a bulk acoustic wave resonator, the bulk acoustic wave resonator comprising a piezoelectric film, and a first electrode and a second electrode positioned on upper and lower surfaces of the piezoelectric film, characterized in that the tuning method of the bulk acoustic wave resonator comprises:
the piezoelectric film comprises n layers of polar piezoelectric films, and the polarities of any two adjacent layers of polar piezoelectric films are opposite, wherein n is more than or equal to 2;
the number of layers of the polar piezoelectric film of different polarities is changed by fixing the total thickness of the piezoelectric film.
2. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the single-layer thickness of the polar piezoelectric film is not less than 50nm; the total thickness of the piezoelectric film ranges from 100nm to 4000nm.
3. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the thickness of the polar piezoelectric films of different polarities is the same.
4. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the thickness of the polar piezoelectric films of different polarities is different.
5. The method of tuning a bulk acoustic wave resonator as set forth in claim 4, wherein: the thickness ratio of different layers is changed by fixing the layer number of the polar piezoelectric film.
6. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the polar piezoelectric film is made of AlN and Al x Ga (1-x) N、Sc x Al (1-x) N、LiNbO 3 、PZT、PbTiO 3 And ZnO, wherein x and y are equal to or greater than 0 and equal to or less than 1.
7. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the materials of the polar piezoelectric films with different polarities are the same.
8. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the materials of the polar piezoelectric films with different polarities are different.
9. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the material of the first electrode is any one or the combination of two or more of Au, ag, ru, W, mo, ir, al, pt, nb and Hf, and the thickness of the material of the first electrode ranges from 100nm to 300nm.
10. A method of tuning a bulk acoustic wave resonator as claimed in claim 1, characterized in that: the material of the second electrode is any one or the combination of two or more of Au, ag, ru, W, mo, ir, al, pt, nb and Hf; the thickness of the material of the second electrode ranges from 100nm to 300nm.
CN202310229595.7A 2023-03-10 2023-03-10 Tuning method of bulk acoustic wave resonator Pending CN116248067A (en)

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