CN116232275A - Bulk acoustic wave resonator structure - Google Patents
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- CN116232275A CN116232275A CN202310229607.6A CN202310229607A CN116232275A CN 116232275 A CN116232275 A CN 116232275A CN 202310229607 A CN202310229607 A CN 202310229607A CN 116232275 A CN116232275 A CN 116232275A
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- 239000000463 material Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000001914 filtration Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 20
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a bulk acoustic wave resonator structure, which comprises a substrate, a first electrode, a piezoelectric film laminated structure and a second electrode; an acoustic mirror is arranged between the substrate and the first electrode; the piezoelectric film laminated structure is positioned between the first electrode and the second electrode; the piezoelectric film laminated structure is formed by alternately laminating a plurality of first piezoelectric films and second piezoelectric films, and the polarities of the first piezoelectric films and the second piezoelectric films are opposite. According to the invention, the resonance frequency of the bulk acoustic wave filter is improved under the condition that the thickness of the piezoelectric film is not required to be thinned by arranging a plurality of layers of piezoelectric films with opposite polarities; meanwhile, polarity inversion is realized by using a piezoelectric film laminated structure, dependence on the thickness of piezoelectric materials is reduced, no additional growth electrode is needed, acoustic wave loss is reduced, and quality factors are improved; in addition, the single crystal material is matched as the piezoelectric film material, so that the crystal quality of the piezoelectric film is further improved, and the filtering performance of the device is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and particularly relates to a bulk acoustic wave resonator structure.
Background
Currently, wireless data transmission requires a radio frequency filter to have an operating frequency of 5GHz or higher for application to 5G communication. Filters capable of satisfying 5G communication are mainly BAW (bulk acoustic wave) and SAW (Surface AcousticWave, surface acoustic wave filter).
The BAW device has extremely high Q value (quality factor) which can reach more than 4000, the working frequency range of the BAW device is from 100MHz to 20GHz, and the BAW device has the advantages of high working frequency, low insertion loss, high frequency selection characteristic, high power capacity, strong antistatic capability and the like, and is an optimal solution for the radio frequency front end in the future.
However, in the conventional single-layer piezoelectric thin-film resonator, since the resonant frequency of the bulk acoustic wave resonator is inversely related to the thickness of the thin film, the thickness of the piezoelectric thin film of the filter applied in the higher frequency band of 5G communication needs to be smaller, the quality requirement on the thin film crystal is higher, and meanwhile, the power processing capability, the electromechanical coupling coefficient and the Q value of the thin film BAW resonator are reduced due to the reduction of the thickness of the piezoelectric thin film, so that other regulation means are urgently needed to be searched for to improve the frequency of the resonator.
It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art, and is not to be construed as merely illustrative of the background art section of the present application.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a bulk acoustic wave resonator structure, which is used for solving the problems of high process requirement and reduced performance when the bulk acoustic wave filter in the prior art increases the resonant frequency.
To achieve the above object, the present invention provides a bulk acoustic wave resonator structure including: a substrate, a first electrode, a piezoelectric thin film laminated structure, and a second electrode;
the first electrode is positioned on the substrate, and an acoustic mirror is arranged between the substrate and the first electrode and is used for reflecting sound waves to generate resonance; the piezoelectric film laminated structure is positioned on the first electrode, and the second electrode is positioned on the piezoelectric film laminated structure;
the piezoelectric film laminated structure is formed by alternately laminating a plurality of first piezoelectric films and second piezoelectric films, and the polarities of the first piezoelectric films and the second piezoelectric films are opposite.
Optionally, the acoustic mirror is an air cavity or a bragg reflection stack disposed on the surface of the substrate.
Optionally, the air cavity is a cavity formed by the groove on the surface of the substrate and the first electrode; or the surface of the substrate is provided with a supporting layer, the supporting layer is patterned to form a hollow part, and the air cavity is a cavity formed by the substrate, the patterned hollow part of the supporting layer and the first electrode.
Optionally, the material of the first piezoelectric film or/and the material of the second piezoelectric film is AlN or Al x Ga (1-x) N、Sc y Al (1-y) N、LiNbO 3 、PZT、PbTiO 3 Or one or more of ZnO, wherein x and y are each a number of 0 or more and 1 or less.
Optionally, the material of the first piezoelectric film or/and the material of the second piezoelectric film is monocrystalline AlN or Sc y Al (1-y) N。
Optionally, the thickness of the piezoelectric film laminated structure is 0.1-4 micrometers, the thickness of each layer of the first piezoelectric film is greater than or equal to 0.05 micrometers, and the thickness of each layer of the second piezoelectric film is greater than or equal to 0.05 micrometers.
Optionally, the material of the first electrode and/or the second electrode is one or any combination of more than one of Au, ag, ru, W, mo, ir, al, pt, nb or Hf.
Optionally, the thickness of the first electrode is 0.1-0.3 microns.
Optionally, the thickness of the second electrode is 0.1-0.3 microns.
Optionally, the material of the substrate is one or more than one of silicon, silicon carbide, germanium, silicon dioxide, silicon nitride or sapphire.
As described above, the bulk acoustic wave resonator structure of the present invention has the following beneficial effects:
according to the invention, the resonance frequency of the bulk acoustic wave filter is improved under the condition that the thickness of the piezoelectric film is not required to be thinned by arranging a plurality of layers of piezoelectric films with opposite polarities;
according to the invention, the polarity inversion is realized by using the piezoelectric film laminated structure, so that the requirement on piezoelectric materials is reduced, no additional growth electrode is needed, the acoustic wave loss is reduced, and the quality factor is improved;
the invention is matched with monocrystalline material as piezoelectric film material, further improves the crystal quality of the piezoelectric film and the filter performance of the device.
Drawings
Fig. 1 is a schematic view showing a bulk acoustic wave resonator structure according to the present invention.
Fig. 2 shows a schematic diagram of a bulk acoustic wave resonator structure in the prior art.
Fig. 3 is a schematic diagram showing a vibration mode of a bulk acoustic wave resonator structure according to the prior art.
Fig. 4 is a schematic diagram showing a vibration mode of a bulk acoustic wave resonator structure according to the present invention.
Description of element reference numerals
110. A substrate; 111. an air chamber; 120. a first electrode; 130. a piezoelectric layer; 141. a first piezoelectric film; 142. a second piezoelectric film; 150. a first polarity direction; 151. unidirectional stress; 160. a second polarity direction; 161. compressive stress; 162. tensile stress; 190. and a second electrode.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the schematic drawings showing the structure of the apparatus are not partially enlarged to general scale, and the schematic drawings are merely examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1, the present invention provides a bulk acoustic wave resonator structure including: a substrate 110, a first electrode 120, a piezoelectric thin film laminated structure, and a second electrode 190; the first electrode 120 is located on the substrate 110, and an acoustic mirror is disposed between the substrate 110 and the first electrode 120, and is used for reflecting sound waves to generate resonance; the piezoelectric thin film laminated structure is located on the first electrode 120, and the second electrode 190 is located on the piezoelectric thin film laminated structure; the piezoelectric film laminated structure is formed by alternately laminating a plurality of first piezoelectric films 141 and second piezoelectric films 142, and the polarities of the first piezoelectric films 141 and the second piezoelectric films 142 are opposite.
As shown in fig. 2, the conventional bulk acoustic wave resonator structure is made of a single piezoelectric layer 130, and since the polarity is in a single direction, such as the first polarity direction 150 shown in fig. 3, is subjected to unidirectional stress 151, the resulting resonance is a first-order asymmetric resonance mode, and the resonance frequency is mainly determined by the thickness of the piezoelectric film. In the prior art, in order to achieve higher-order resonance by polarity inversion to increase the resonance frequency, electrodes are generally grown between the piezoelectric layers 130 by using ferroelectric materials, and the polarities of the materials are regulated and changed by using a bias method, so that the electrodes between the piezoelectric layers 130 increase the acoustic wave loss of the resonator and reduce the quality factor of the resonator.
According to the invention, by arranging the multilayer piezoelectric film laminated structure with opposite polarities, the piezoelectric response of the adjacent piezoelectric film layers to the electric signals has a 180-degree phase difference, the adjacent piezoelectric film layers are respectively subjected to compressive stress 161 and tensile stress 162 by utilizing the inverse piezoelectric effect, so that the polarity directions of the adjacent piezoelectric film layers are reversed, as shown in a second polarity direction 160 in fig. 4, a first-order asymmetric resonance mode is restrained, a higher-order resonance mode with higher resonance frequency is excited, and the resonance frequency of the bulk acoustic wave filter is improved under the condition that the thickness of the piezoelectric film is not required to be thinned; meanwhile, the piezoelectric film material does not need to be ferroelectric material or grow electrodes between the piezoelectric films, so that the processing technology is simplified, the selection range of the device material is expanded, the industrialized application of the device is facilitated, the acoustic wave loss of the bulk acoustic wave resonator is reduced, the quality factor is improved, and the working performance of the resonator is further improved.
In one embodiment, the acoustic mirror is an air cavity 111 or a Bragg reflection stack or other equivalent form disposed on the surface of the substrate 110.
In one embodiment, the air cavity 111 is a cavity formed by a groove on the surface of the substrate 110 and the first electrode 120; or a supporting layer is disposed on the surface of the substrate 110, the supporting layer is patterned to form a hollow portion, and the air cavity 111 is a cavity formed by the substrate 110, the patterned hollow portion of the supporting layer and the first electrode 120.
Specifically, when the acoustic mirror is the air chamber 111, the air chamber 111 serves as an acoustic wave reflecting layer. Wherein the air cavity 111 disposed between the first electrode 120 and the substrate 110 is to utilize acoustic impedance of air approaching 0, so that sound waves are totally reflected back into a sandwich structure formed by the second electrode 190, the piezoelectric thin film laminated structure and the first electrode 120 at the interface of the first electrode 120 and air to form standing waves, thereby generating resonance; when the acoustic mirror is a bragg reflection stack, the bragg reflection stack includes a low acoustic impedance layer and a high acoustic impedance layer alternately stacked a plurality of times, similar to the principle of action of the air chamber 111.
In particular, a plurality of said bulk acoustic wave resonator structures are connected in series and/or in parallel to constitute a filter.
In one embodiment, the material of the first piezoelectric film 141 and/or the material of the second piezoelectric film 142 is AlN, al x Ga (1-x) N、Sc y Al (1-y) N、LiNbO 3 、PZT、PbTiO 3 Or one or more of ZnO, wherein x and y are each a number of 0 or more and 1 or less.
In one embodiment, the material of the first piezoelectric film 141 and/or the material of the second piezoelectric film 142 is single crystal AlN or Sc y Al (1-y) N。
The invention can improve the crystal quality of the piezoelectric film by using the monocrystalline material, thereby further improving the resonance performance of the resonator.
In one embodiment, the piezoelectric thin film stack is 0.1-4 microns thick.
In one embodiment, the thickness of each of the first piezoelectric films 141 is 0.05 μm or more, and the thickness of each of the second piezoelectric films 142 is 0.05 μm or more.
The invention realizes high-frequency resonance frequency by laminating the piezoelectric films with opposite polarities, so that the thickness requirement on the piezoelectric films is not required to be too high, and the high-frequency resonance can be realized under the condition of adapting to the precision of the existing preparation process.
In one embodiment, the material of the first electrode 120 and/or the second electrode 190 is one or any combination of more than one of Au, ag, ru, W, mo, ir, al, pt, nb or Hf.
In one embodiment, the first electrode 120 has a thickness of 0.1-0.3 microns and the second electrode 190 has a thickness of 0.1-0.3 microns.
Specifically, the dimensions of the first electrode 120 and the second electrode 190 are adjusted according to the impedance matching and process accuracy of the device.
In one embodiment, the substrate 110 is made of one or more of silicon, silicon carbide, germanium, silicon dioxide, silicon nitride, or sapphire.
In summary, according to the bulk acoustic wave resonator structure, the resonance frequency of the bulk acoustic wave filter can be improved by arranging a plurality of layers of piezoelectric films with opposite polarities under the condition that the thickness of the piezoelectric films is not required to be thinned; meanwhile, the polarity inversion is realized by using the piezoelectric film laminated structure, so that the requirement on piezoelectric materials is reduced, no additional growth electrode is needed, the acoustic wave loss is reduced, and the quality factor is improved; in addition, the single crystal material is matched as the piezoelectric film material, so that the crystal quality of the piezoelectric film is further improved, and the filtering performance of the device is improved.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. A bulk acoustic wave resonator structure, characterized in that the bulk acoustic wave resonator structure comprises: a substrate, a first electrode, a piezoelectric thin film laminated structure, and a second electrode;
the first electrode is positioned on the substrate, and an acoustic mirror is arranged between the substrate and the first electrode and is used for reflecting sound waves to generate resonance; the piezoelectric film laminated structure is positioned on the first electrode, and the second electrode is positioned on the piezoelectric film laminated structure;
the piezoelectric film laminated structure is formed by alternately laminating a plurality of first piezoelectric films and second piezoelectric films, and the polarities of the first piezoelectric films and the second piezoelectric films are opposite.
2. The bulk acoustic wave resonator structure of claim 1, wherein the acoustic mirror is an air cavity or a bragg reflection stack disposed on the substrate surface.
3. The bulk acoustic wave resonator structure of claim 2, wherein the air cavity is a cavity formed by a recess of the substrate surface and the first electrode; or the surface of the substrate is provided with a supporting layer, the supporting layer is patterned to form a hollow part, and the air cavity is a cavity formed by the substrate, the patterned hollow part of the supporting layer and the first electrode.
4. A bulk acoustic wave resonator structure according to any of claims 2 or 3, characterized in that the material of the first piezoelectric film or/and the material of the second piezoelectric film is AlN, al x Ga (1-x) N、Sc y Al (1-y) N、LiNbO 3 、PZT、PbTiO 3 Or one or more of ZnO, wherein x and y are each a number of 0 or more and 1 or less.
5. A bulk acoustic wave resonator structure according to any of claims 2 or 3, characterized in that the material of the first piezoelectric film or/and the material of the second piezoelectric film is monocrystalline AlN or Sc y Al (1-y) N。
6. A bulk acoustic wave resonator structure according to any of claims 2 or 3, characterized in that the thickness of the piezoelectric thin film stack structure is 0.1-4 micrometers, the thickness of each layer of the first piezoelectric thin film is 0.05 micrometers or more, and the thickness of each layer of the second piezoelectric thin film is 0.05 micrometers or more.
7. A bulk acoustic wave resonator structure according to any of claims 2 or 3, characterized in that the material of the first electrode and/or the second electrode is any combination of one or more of Au, ag, ru, W, mo, ir, al, pt, nb or Hf.
8. A bulk acoustic wave resonator structure according to any of claims 2 or 3, characterized in that the thickness of the first electrode is 0.1-0.3 micrometer.
9. A bulk acoustic wave resonator structure according to any of claims 2 or 3, characterized in that the thickness of the second electrode is 0.1-0.3 micrometer.
10. A bulk acoustic wave resonator structure according to any of claims 2 or 3, characterized in that the material of the substrate is any combination of one or more of silicon, silicon carbide, germanium, silicon dioxide, silicon nitride or sapphire.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310229607.6A CN116232275A (en) | 2023-03-10 | 2023-03-10 | Bulk acoustic wave resonator structure |
| PCT/CN2023/094376 WO2024187579A1 (en) | 2023-03-10 | 2023-05-15 | Bulk acoustic wave resonator and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310229607.6A CN116232275A (en) | 2023-03-10 | 2023-03-10 | Bulk acoustic wave resonator structure |
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| Publication Number | Publication Date |
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| CN116232275A true CN116232275A (en) | 2023-06-06 |
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| CN202310229607.6A Pending CN116232275A (en) | 2023-03-10 | 2023-03-10 | Bulk acoustic wave resonator structure |
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