CN116243555A - Method for setting position of photomask detection mark and photomask with detection mark - Google Patents

Abstract

The present disclosure relates to a method for setting a position of a mask inspection mark and a mask with an inspection mark, the method for setting a position of a mask inspection mark includes: providing a plurality of photomasks; dividing a pattern area and a non-pattern area on the photomask; selecting a region, which is overlapped with the non-pattern region of one photomask and the non-pattern region of the other photomask, as a mark region, and setting a detection mark in the mark region. According to the method, the chip area is divided into the pattern areas for transmitting light according to the photomask layer, the detection marks are arranged in other areas outside the pattern areas, the detection marks can be close to the pattern areas without increasing the area of the chip area, and the number of bare chips is not lost; meanwhile, the detection marks are arranged in the overlapping areas of the non-pattern areas, so that the purpose of detecting the relative positions of different photomasks can be achieved, and the detection effectiveness is further improved.

Description

Method for setting position of photomask detection mark and photomask with detection mark

Technical Field

The disclosure relates to the technical field of semiconductors, and in particular relates to a method for setting a position of a photomask detection mark and a photomask with the detection mark.

Background

At present, in the process of photomask manufacturing, pattern position deviation can be generated, and the marks for detecting the position of the photomask are all placed on the cutting tracks, are far away from the main pattern of the chip area, and cannot represent the position deviation of the main pattern of the chip area while representing the relative positions between the photomasks.

Disclosure of Invention

The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the scope of the claims.

In order to overcome the problems in the related art, the present disclosure provides a method for setting a position of a mask inspection mark and a mask with the inspection mark.

The embodiment of the disclosure provides a method for setting a position of a photomask detection mark, which comprises the following steps:

providing a plurality of photomasks; dividing a chip area and a cutting channel on the photomask, and dividing a pattern area and a non-pattern area on the chip area of the photomask; selecting a region of the non-pattern region of one photomask and the non-pattern region of the other photomask as a mark region, and setting detection marks in the mark region.

According to some embodiments of the disclosure, the dividing the chip region of the mask into a pattern region and a non-pattern region includes: and dividing a plurality of pattern areas in the chip area, wherein the chip area outside the pattern areas forms the non-pattern area.

According to some embodiments of the disclosure, selecting a region where the non-pattern region of one of the photomasks overlaps with the non-pattern region of another one of the photomasks as a mark region, and setting a detection mark in the mark region includes: and grouping different photomasks according to the distance between the pattern area and the center of the photomasks, and setting detection marks at the same positions on the outer photomasks in the same group.

According to some embodiments of the disclosure, selecting the area overlapping the non-pattern area of one of the masks as the mark area includes: when the edges of different photomasks are flush in the vertical direction, the overlapping areas of the projections of the non-patterned areas on different photomasks define the location, profile and size of the marking areas.

According to some embodiments of the disclosure, the detection mark has at least two contour boundaries in a first direction and a second direction, the first direction is perpendicular to the second direction, and the number of boundaries of the detection mark in the first direction and the second direction is an even number.

According to some embodiments of the disclosure, a maximum distance between two adjacent detection marks in the first direction and/or the second direction is less than or equal to a maximum measurement window of a corresponding detection machine.

According to some embodiments of the present disclosure, the pattern size of the inspection mark is smaller than the minimum resolution of the corresponding wafer exposure machine and/or the pattern size of the inspection mark is larger than the minimum process size of the photomask.

In a second aspect of embodiments of the present disclosure, there is provided a photomask having a detection mark, the photomask having a detection mark comprising: the photomask comprises a photomask body and detection marks arranged on the photomask body, wherein the photomask body comprises a pattern area and a non-pattern area, the pattern area is multiple, the non-pattern area is provided with a marking area, each photomask body is provided with the marking area with the same position, outline and size, and the detection marks are located in the marking area.

According to some embodiments of the disclosure, the detection signature is distributed along the outline of the pattern area.

According to some embodiments of the present disclosure, the hue of the marked region coincides with the hue of the non-patterned region in which it corresponds.

The technical scheme provided by the embodiment of the disclosure can comprise the following beneficial effects: the chip area is respectively marked out into a pattern area for transmitting light according to the photomask layer, detection marks are arranged in other areas outside the pattern area, the detection marks can be close to the pattern area without increasing the area of the chip area, and the number of bare chips is not lost; meanwhile, the detection marks are arranged in the overlapping areas of the non-pattern areas, so that the purpose of detecting the relative positions of different photomasks can be achieved, and the detection effectiveness is further improved.

According to some embodiments of the present disclosure, the color tone of the marking zone corresponds to the ambient color tone of the corresponding wafer exposure machine.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.

Fig. 1 is a flowchart illustrating a method for setting a mask inspection mark position according to an exemplary embodiment.

Fig. 2 is a schematic diagram showing a scribe line position in a method for setting a mask inspection mark position according to an exemplary embodiment.

Fig. 3 is a schematic diagram showing a layout of a detection mark in a mask detection mark position setting method according to an exemplary embodiment.

Fig. 4 is a schematic diagram of a photomask having different pattern areas in a photomask inspection mark position setting method according to an exemplary embodiment.

Fig. 5 is a schematic diagram illustrating a method for setting positions of detecting marks of a photomask according to an exemplary embodiment, in which the marks are formed after the photomasks having different pattern areas are overlapped.

Fig. 6 is a schematic diagram showing the inside of a detection mark setting mark region in a mask detection mark position setting method according to an exemplary embodiment.

Fig. 7 is a schematic diagram showing positions of marking areas in a mask inspection marking position setting method according to an exemplary embodiment.

Fig. 8 is a schematic diagram showing a comparison between a maximum distance between two adjacent inspection marks in a first direction and/or a second direction and a maximum measurement window of an inspection machine in a method for setting positions of inspection marks of a photomask according to an exemplary embodiment.

Fig. 9 is a schematic diagram showing identification zones consistent with non-pattern zone hues, according to an example embodiment.

Fig. 10 is a schematic diagram showing the tone coincidence of the identification region and the non-pattern region according to another exemplary embodiment.

Fig. 11 is a schematic diagram showing the tone coincidence of the identification region and the non-pattern region according to another exemplary embodiment.

FIG. 12 is a schematic diagram showing identification zones not being in accordance with a non-patterned zone hue according to an example embodiment.

FIG. 13 is a diagram illustrating the uniformity of placement locations of inspection marks among reticles, according to an exemplary embodiment.

Reference numerals

1. A mask body; 11. cutting the channel; 12. a non-pattern region; 13. a pattern region; 2. a marking area; 3. detecting the identification; 4. detecting a maximum measurement window of the machine; 5. and a grinding zone.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure. It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be arbitrarily combined with each other.

As described in the background art, in the current photomask manufacturing process, pattern position deviation is generated, and the marks for detecting the positions of the photomasks are all placed on the dicing streets, are far away from the main patterns of the chip area, and cannot represent the position deviation of the main patterns of the chip area while representing the relative positions between photomasks.

According to the method for setting the position of the photomask detection mark and the photomask with the detection mark, the chip area is divided into pattern areas for transmitting light according to the photomask layer, the detection mark is arranged in other areas outside the pattern areas, the area of the chip area is not required to be increased, the detection mark can be close to the pattern areas, and the number of bare chips is not lost; meanwhile, the detection marks are arranged in the overlapping areas of the non-pattern areas, so that the purpose of detecting the relative positions of different photomasks can be achieved, and the detection effectiveness is further improved.

In an exemplary embodiment of the disclosure, a method for setting a position of a mask inspection mark and a mask with an inspection mark are provided, as shown in fig. 1, fig. 1 is a flowchart illustrating a method for setting a position of a mask inspection mark according to an exemplary embodiment; FIG. 2 is a schematic diagram illustrating scribe line positions in a method for setting a reticle inspection mark position according to an exemplary embodiment; FIG. 3 is a schematic diagram of a layout of inspection marks in a method for setting positions of inspection marks of a photomask according to an exemplary embodiment; FIG. 4 is a schematic diagram of a photomask having different pattern areas in a photomask inspection mark position setting method according to an exemplary embodiment; FIG. 5 is a schematic diagram of a method for setting positions of marks for detecting masks, in which masks having different pattern areas are overlapped to form a mark area according to an exemplary embodiment; FIG. 6 is a schematic diagram of the interior of a detection mark setting mark region in a reticle detection mark position setting method according to an exemplary embodiment; FIG. 7 is a schematic diagram showing the position of a marker region in a reticle inspection marker position setting method according to an example embodiment; fig. 8 is a schematic diagram showing a comparison between a maximum distance between two adjacent inspection marks in a first direction and/or a second direction and a maximum measurement window of an inspection machine in a method for setting positions of inspection marks of a photomask according to an exemplary embodiment. FIG. 9 is a schematic diagram showing identification zones consistent with non-pattern zone hues in accordance with an exemplary embodiment; FIG. 10 is a schematic diagram showing identification zones consistent with non-pattern zone hues according to another exemplary embodiment; FIG. 11 is a schematic diagram showing identification zones consistent with non-pattern zone hues according to another exemplary embodiment; FIG. 12 is a schematic diagram showing identification zones not being in accordance with a non-patterned zone hue according to an example embodiment; FIG. 13 is a diagram illustrating the uniformity of placement locations of inspection marks among reticles, according to an exemplary embodiment. The following is explained in connection with fig. 1 to 13.

The description of the embodiments is provided to facilitate understanding of the embodiments by those skilled in the art, and is not intended to limit the scope of the embodiments.

Referring to fig. 1, an exemplary embodiment of the present disclosure provides a method for setting a position of a mask inspection mark, where the method includes:

s100, providing a plurality of photomasks.

Illustratively, referring to fig. 2 and 3, multiple reticles are generated and used in the fabrication of a chip, each reticle used to fabricate a chip being identified as a separate single reticle layer.

S200, dividing a chip area and a cutting channel on the photomask, and dividing a pattern area and a non-pattern area on the chip area.

For example, referring to fig. 2 and 3, the mask has a circuit pattern for manufacturing a chip, the region of the mask on which the circuit pattern is arranged is a pattern region 13, and the solid portion of the mask around the pattern region 13 is a non-pattern region 12.

S300, selecting a region of the non-pattern region of one photomask and the non-pattern region of the other photomask as a mark region, and setting detection marks in the mark region.

Illustratively, referring to fig. 2 and 3, by overlapping the non-pattern areas 12 of the single-layer mask layers, the non-pattern areas 12 common to the single-layer mask layers are selected as the marking areas 2 for fixing the detection marks 3, and the positions, sizes, and contours of the marking areas 2 on each single-layer mask layer are the same, i.e., the positions of the detection marks 3 with respect to the center of the single-layer mask layer are the same, and are located within the non-pattern areas 12 near the pattern areas 13.

In this embodiment, besides the position detection of the pattern region 13 on the single mask layer, the relative position between the different single mask layers is also detected. In order to ensure the effectiveness of the position detection of the photomask, the detection marks 3 on each single photomask layer are required to be fixed at the same position, and the circuit patterns on the photomasks for manufacturing the same chip are different, namely, the shapes, the sizes and the layouts of the pattern areas 13 are different, so that the detection marks 3 are difficult to be both closer to the pattern areas 13 and used for marking the positions of the pattern areas 13, and the detection of the relative positions of different single photomask layers can be guided.

The chip area is divided into the pattern areas 13 for light transmission according to the photomask layer, the detection marks 3 are arranged in other areas outside the pattern areas 13, the detection marks 3 can be close to the pattern areas 13 without increasing the area of the chip area, and the number of bare chips is not lost; meanwhile, the detection marks 3 are arranged in the overlapping area of the non-pattern areas 12, so that the purpose of detecting the relative positions of different photomasks can be achieved, and the detection effectiveness is further improved. Finally, the detection mark 3 can be close to the pattern area 13, is used for identifying the position of the pattern area 13 more clearly, can provide an indication effect in the process of detecting the relative position relationship between different photomasks, and improves the accuracy degree of the detection result and the stability in the detection process.

In an exemplary embodiment of the present disclosure, referring to fig. 2 and 3, step S200 of dividing a pattern area and a non-pattern area in a chip area specifically includes:

the chip area is divided into a plurality of pattern areas, and the chip area outside the pattern areas forms a non-pattern area.

Illustratively, referring to fig. 2 and 3, the chip region is used to accommodate and define a circuit pattern on a single mask layer, the scribe line 11 surrounds the periphery of the chip region, the mask dicing process occurs in the scribe line 11, and the non-pattern region 12 is further defined as the chip region between the scribe line 11 and the pattern region 13.

In this embodiment, by excluding the scribe line 11 from the non-pattern region 12, the area of the non-pattern region 12 is further reduced, and other regions of the single-layer mask layer except the pattern region 13 are defined, so that the detection mark 3 can be placed in a region of the chip region where no circuit pattern is provided, and the detection mark 3 can be close to the pattern region 13 without increasing the area of the chip region, without losing the number of dies; meanwhile, the chip area of each single photomask layer is the area covered by the pattern area 13, so that the detection mark 3 can be arranged in the overlapping area of the non-pattern areas 12, the purpose of detecting the relative positions of different photomasks can be achieved, and the detection effectiveness is further improved. Finally, the detection mark 3 can be close to the pattern area 13, is used for identifying the position of the pattern area 13 more clearly, can provide an indication effect in the process of detecting the relative position relationship between different photomasks, and improves the accuracy degree of the detection result and the stability in the detection process.

In an exemplary embodiment of the present disclosure, referring to fig. 4, step S300, selecting a region where a non-pattern region of one photomask overlaps with a non-pattern region of another photomask as a mark region, and setting a detection mark in the mark region specifically includes:

different photomasks are grouped according to the distance between the pattern area and the center of the photomasks, and detection marks are arranged at the same positions on the outer photomasks in the same group.

By way of example, with continued reference to fig. 4, a single-layer reticle is shown in fig. 4 with four pattern regions 13 that are each different, and with only pattern regions 13 and non-pattern regions 12 remaining in the chip region. Referring to fig. 4 and 5, according to the distance between the pattern area 13 and the center of the single-layer photomask layer, the two single-layer photomask layers on the left side, which are farther from the center of the single-layer photomask layer by the pattern area 13 shown in fig. 4, are selected to be grouped together, and after the two single-layer photomask layers are overlapped, the mark areas 2 (shown in the upper part of fig. 5) which are positioned on the single-layer photomask layers with different pattern areas 13 are obtained, then, as shown in the upper part of fig. 6, detection marks 3 are fixed on the mark areas 2, wherein the number, layout and outline of the detection marks 3 can be adjusted according to working conditions, and only the consistency of the detection marks 3 on all the single-layer photomask layers in the group is ensured.

In this embodiment, the detection mark 3 can be located on the single-layer photomask layers with different layouts of the two pattern areas 13 at the same time, so that the detection mark 3 can be close to the pattern areas 13 without increasing the area of the chip area, the position of the pattern areas 13 can be used for more clearly marking, the positions of the detection mark 3 on different single-layer photomasks can be kept consistent, the detection mark 3 can provide indication function in the process of detecting the relative position relationship between different photomasks, and the accuracy of the detection result and the stability in the detection process are improved.

In other embodiments, referring to fig. 4, according to the distance between the pattern area 13 and the center of the single-layer photomask layer, the two single-layer photomask layers on the right side, which are closer to the center of the single-layer photomask layer, of the pattern area 13 shown in fig. 4 are selected to be grouped together, and after the two single-layer photomask layers are overlapped, a mark area 2 (shown in the lower part of fig. 5) with a position existing on the different single-layer photomask layers of the two pattern areas 13 is obtained, and then, as shown in the lower part of fig. 6, a detection mark 3 is fixed on the mark area 2, wherein the number, layout and contour of the detection marks 3 can be adjusted according to working conditions, and only the consistency of the detection marks 3 on all the single-layer photomask layers in the group is required to be ensured.

In this embodiment, the detection mark 3 can be located on the single-layer photomask layers with different layouts of the two pattern areas 13 at the same time, so that the detection mark 3 can be close to the pattern areas 13 without increasing the area of the chip area, the position of the pattern areas 13 can be used for more clearly marking, the positions of the detection mark 3 on different single-layer photomasks can be kept consistent, the detection mark 3 can provide indication function in the process of detecting the relative position relationship between different photomasks, and the accuracy of the detection result and the stability in the detection process are improved.

In an exemplary embodiment of the present disclosure, referring to fig. 6, step S300, selecting, as a mark area, a region where a non-pattern area of one mask layer overlaps with a non-pattern area of another mask layer specifically includes:

the overlapping areas of the projections of the non-patterned areas on the different masks define the position, profile and size of the marking area when the edges of the different masks are level in the vertical direction.

For example, referring to fig. 6 and 7, by overlapping different single-layer photo-mask layers, it is possible to obtain a non-pattern region 12 shared by the different single-layer photo-mask layers, select the defined non-pattern region 12 as a mark region 2, and set a detection mark 3 in the mark region 2, so that the detection mark 3 has a function of indicating not only the position of the pattern region 13 on the single-layer photo-mask layer but also the relative positional relationship between the different single-layer photo-mask layers.

It should be understood that the above-mentioned grouping of different single-layer mask layers by the distance between the pattern areas 13 and the center of the single-layer mask layer is only one specific embodiment, and other groupings are possible in other embodiments, for example, according to the area, shape, etc. of the patterns in the pattern areas 13.

It should be understood that, along with the increase in the number of single-layer mask layers in the group, the area of the non-pattern region 12 eventually defined for the marking region 2 may be reduced, so that different single-layer mask layers that can be divided into the same group according to the distance between the pattern region 13 and the center of the single-layer mask layer may be further grouped, so as to ensure the area of the marking region 2 for setting the detection mark 3, reduce the setting difficulty of the detection mark 3, ensure the distance between the detection mark 3 and the edge of the pattern region 13 (and between adjacent detection marks 3), and improve the accuracy of the detection result and the stability in the detection process.

In an exemplary embodiment of the present disclosure, referring to fig. 7, the detection marks 3 are distributed along the contour edge of the pattern area 13.

Illustratively, referring to fig. 7, the non-pattern region 12 after the overlap selection forms the mark region 2, and since the non-pattern region 12 is a region surrounding the pattern region 13 in the chip region, the mark region 2 for defining the setting position of the detection mark 3 is located at the periphery of the pattern region 13. The detection marks 3 may be plural, for example, three. For the case where the circuit pattern in the pattern area 13 is approximately elongated, three detection marks 3 are spaced apart along the length direction of the circuit pattern in the pattern area 13, and the three detection marks 3 outline the circuit pattern in the pattern area 13. In the case of a frame layout of the circuit patterns in the pattern area 13, the detection marks 3 are distributed inside the area surrounded by the circuit patterns in the pattern area 13, and extend from one side contour to the other side of the inside of the circuit patterns in the pattern area 13, and also define the circuit contours in the pattern area 13. For the case that the area of the circuit pattern in the pattern area 13 is large and is distributed in a sheet shape, the detection marks 3 are distributed on two sides of the circuit pattern in the pattern area 13 and are flush with the edge of the circuit pattern in the pattern area 13, so that the positions of the circuit pattern in the pattern area 13 are defined by the two rows of detection marks 3.

In this embodiment, the detection mark 3 fixed in the mark region 2 can make the detection mark 3 be close to the pattern region 13 without increasing the area of the chip region, and is used for more clearly marking the position of the pattern region 13, and the detection mark 3 is distributed along the contour edge of the pattern region 13 in cooperation with the position of the pattern region 13, so that the position of the pattern region 13 can be more clearly and accurately indicated, and the accuracy of the detection result and the stability in the detection process are improved.

In an exemplary embodiment of the present disclosure, referring to fig. 8, the non-pattern region 12 includes at least the polishing region 5 or the open region or the auxiliary exposure region.

For example, referring to fig. 8, the areas of the chip area except the pattern area 13 are all non-pattern areas 12, where the non-pattern areas 12 include a polishing area 5, an open area (not shown), and an auxiliary exposure area (not shown), and the detection mark 3 may be disposed in any one of the polishing area 5, the open area (not shown), and the auxiliary exposure area (not shown), or in a plurality of the foregoing areas.

In an exemplary embodiment of the present disclosure, referring to fig. 7 and 8, the detection mark 3 has at least two contour boundaries in both a first direction and a second direction, and the first direction is perpendicular to the second direction.

For example, referring to fig. 7 and 8, the length direction of the single-layer photomask layer is the first direction, the width direction of the single-layer photomask layer is the second direction, the outline boundary of the detection mark 3 is the outline edge line of the detection mark 3, at least two outline edge lines are displayed on the detection mark 3 in the length direction and the width direction of the single-layer photomask layer, for example, the shape of the detection mark 3 is square, so that two outline edges parallel to each other are displayed on the detection mark 3 in the length direction and the width direction of the single-layer photomask layer.

In this embodiment, when the existing machine for detecting the position of the photomask uses optical signals and the detection mark 3 has two boundaries in the X/Y direction, the machine for detecting the position of the photomask can collect two optical signals, so as to obtain accurate position information, and improve the accuracy of the detection result and the stability in the detection process.

In an exemplary embodiment of the present disclosure, referring to fig. 7 and 8, the number of boundaries of the detection mark 3 in the first direction and the second direction is an even number.

Illustratively, referring to fig. 7 and 8, the detection mark 3 is rectangular in shape.

In this embodiment, when the existing machine for detecting the position of the photomask has two boundaries in the X/Y direction by using optical signals, the machine for detecting the position of the photomask can collect two optical signals, and the error caused by measuring or detecting the outline of the mark can be reduced by using the optical signals of the double numbers brought by the double numbers of boundaries, thereby improving the accuracy of the detection result and the stability in the detection process.

It should be understood that the shape of the detection mark 3 is merely a specific embodiment, and in other embodiments, the shape of the detection mark 3 may be a hexagon, an octagon, or other shapes, and the embodiments of the present disclosure are not limited to the specific shape and the number of contour edges of the detection mark 3, and other embodiments under the technical idea that the number of boundaries of the detection mark 3 in the first direction and the second direction is an even number also belong to the concepts of the technical solutions defined in the present application.

In an exemplary embodiment of the present disclosure, referring to fig. 8, a maximum distance between two adjacent detection marks 3 in the first direction and/or the second direction is less than or equal to a maximum measurement window 4 of a corresponding detection machine.

For example, referring to fig. 8, the maximum distances of two adjacent detection marks 3 in the first direction and the second direction are smaller than (or equal to) the maximum measurement window 4 of the corresponding detection machine.

In this embodiment, the maximum measurement window 4 of the detection machine is used for corresponding to the detection marks 3 and obtaining optical signals, when the maximum distances of two adjacent detection marks 3 in the first direction and the second direction are smaller than (or equal to) the maximum measurement window 4 of the corresponding detection machine, the two boundaries of the two detection marks 3 can be simultaneously obtained by the detection machine, that is, the detection machine can simultaneously obtain the optical signals of two different detection marks 3 for defining the position of the pattern area 13, so as to obtain the position information of the pattern area 13, thereby improving the accuracy degree of the detection result and the stability in the detection process.

In an exemplary embodiment of the present disclosure, referring to fig. 8, the pattern size of the inspection mark 3 is smaller than the minimum resolution of the corresponding wafer exposure machine.

Illustratively, the detecting mark 3 has a long strip-shaped outline, and the pattern size of the detecting mark 3 is the width of the detecting mark 3.

In this embodiment, the detection mark 3 is smaller than the minimum resolution of the corresponding wafer exposure machine, so that the detection mark 3 is prevented from being displayed on the wafer, the possibility of affecting or even causing defects on the wafer in the subsequent process of the wafer is reduced, and meanwhile, the accuracy of the detection result and the stability in the detection process are improved.

In an exemplary embodiment of the present disclosure, referring to fig. 8, the pattern size of the inspection mark 3 is larger than the minimum process size of the mask.

Illustratively, the detecting mark 3 has a long strip-shaped outline, and the pattern size of the detecting mark 3 is the width of the detecting mark 3.

In this embodiment, the detection mark 3 is larger than the minimum size of the photomask manufacturing process, so that the detection mark 3 can be ensured to be displayed on the photomask, the detection mark 3 is used for indicating the position of the pattern area on the photomask, that is, the purpose of representing the position accuracy of the pattern on the photomask can be achieved when the detection mark 3 is displayed on the photomask, and meanwhile, the accuracy of the detection result and the stability in the detection process are improved.

In summary, the minimum dimension of the mask process < the pattern dimension of the inspection mark 3 < the minimum resolution of the wafer exposure machine corresponds to the minimum dimension of the inspection mark 3, so that the inspection mark 3 can be stably displayed on the mask to indicate the position accuracy of the pattern on the mask, and the possibility that the wafer is affected by the subsequent process after the inspection mark 3 is displayed on the wafer or even defective is reduced.

In a second aspect of the disclosed embodiments, there is provided a photomask having a detection mark 3, referring to fig. 7, the photomask having the detection mark 3 comprising: the photomask body 1 and the detection mark 3 arranged on the photomask body 1, the photomask body 1 comprises a pattern area 13 and a plurality of non-pattern areas 12, the non-pattern areas 12 are provided with marking areas 2, each photomask body 1 is provided with marking areas 2 with the same position, outline and size, and the detection mark 3 is positioned in the marking area 2.

For example, referring to fig. 7, there are two pattern areas 13, and the two pattern areas 13 are spaced apart on the mask body 1, the non-pattern area 12 surrounds the periphery of the two pattern areas 13, the mark area 2 is located in the surrounding area of the non-pattern area 12, and the mark area 2 is located at the contour edge of the pattern area 13.

In this embodiment, the detection mark 3 is arranged in the non-pattern area 12 where no circuit pattern is arranged, so that the detection mark 3 can be close to the pattern area 13 without increasing the areas of the original pattern area 13 and the pattern area 13, and the number of bare chips is not lost; meanwhile, the detection marks 3 are arranged in the overlapping area of the non-pattern areas 12, namely, the central positions of the detection marks 3 on different photomask main bodies 1 relative to the photomask main bodies 1 are the same, so that the purpose of detecting the relative positions of different photomasks can be achieved, and the detection effectiveness is further improved. Finally, the detection mark 3 can be close to the pattern area 13, is used for identifying the position of the pattern area 13 more clearly, can provide an indication effect in the process of detecting the relative position relationship between different photomasks, and improves the accuracy degree of the detection result and the stability in the detection process.

In an exemplary embodiment of the present disclosure, referring to fig. 7, the detection marks 3 are distributed along the outline of the pattern area 13.

Illustratively, referring to fig. 7, the non-pattern area 12 after the overlap selection forms the mark area 2, and since the non-pattern area 12 is an area surrounding the pattern area 13, the mark area 2 for defining the setting position of the detection mark 3 is located at the periphery of the pattern area 13. The detection marks 3 may be plural, for example, three. For the case where the circuit pattern in the pattern area 13 is approximately elongated, three detection marks 3 are spaced apart along the length direction of the circuit pattern in the pattern area 13, and the three detection marks 3 outline the circuit pattern in the pattern area 13. In the case of a frame layout of the circuit patterns in the pattern area 13, the detection marks 3 are distributed inside the area surrounded by the circuit patterns in the pattern area 13, and extend from one side contour to the other side of the inside of the circuit patterns in the pattern area 13, and also define the circuit contours in the pattern area 13. For the case that the area of the circuit pattern in the pattern area 13 is large and is distributed in a sheet shape, the detection marks 3 are distributed on two sides of the circuit pattern in the pattern area 13 and are flush with the edge of the circuit pattern in the pattern area 13, so that the positions of the circuit pattern in the pattern area 13 are defined by the two rows of detection marks 3.

In this embodiment, the detection mark 3 fixed in the mark region 2 can make the detection mark 3 be close to the pattern region 13 without increasing the areas of the pattern region 13 and the non-pattern region 12, the positions of the pattern region 13 are used for clearer marking while the number of bare chips is not lost, the detection mark 3 is distributed along the contour edge of the pattern region 13, the positions of the pattern region 13 can be more clearly and accurately indicated, and the accuracy of the detection result and the stability in the detection process are improved.

In an exemplary embodiment of the present disclosure, referring to fig. 9, the color tone of the marking area coincides with the color tone of the non-pattern area where it corresponds.

Illustratively, the detection mark 3 is located in the marking area 2, the marking area 2 is a certain partial area on the non-pattern area 12, and a plurality of marking areas 2 can be arranged, and different marking areas 2 are independent and do not interfere with each other. Referring to fig. 9, the upper half of fig. 9 shows a schematic view of the mark region 2 consistent with the color tone of the non-pattern region 12, and the lower half of fig. 9 shows a schematic view corresponding to the state in which the mark region 2 is not present on the wafer. Referring to fig. 10, the upper half of fig. 10 is a schematic view showing the correspondence of the color tone of the mark region 2 and the non-pattern region 12 corresponding to fig. 9, and is different from fig. 9 in that the color tone of the mark region 2 and the non-pattern region 12 is changed, and the lower half of fig. 10 is a schematic view showing the fact that the mark region 2 is not present on the wafer corresponding to the aforementioned state. Referring to fig. 11, the non-pattern area 12 and the mark area 2 shown in the upper half of fig. 11 are equally divided into portions having different left and right hues, corresponding to the case where the mark area 2 on the photomask of fig. 9 and 10 coincides with the hue of the non-pattern area 12, respectively, and the schematic diagram corresponding to the case where the mark area 2 is not present on the wafer in the above state is shown in the lower half of fig. 11. No matter the specific number and shape of the detection marks 3, when the hue of the mark region 2 is consistent with the hue of the corresponding non-pattern region 12, the outline of the mark region 2 will not appear on the wafer, thus achieving the purposes of reducing the possibility of generating defects in the subsequent manufacturing process and improving the accuracy degree of the detection result and the stability in the detection process.

In this embodiment, referring to fig. 12, the upper half of fig. 12 is a schematic view showing that the color tone of the mark region 2 is different from that of the non-pattern region 12, which is different from that of fig. 9, 10 and 11, and the lower half of fig. 12 is a schematic view showing that the outline of the mark region 2 is different from that of fig. 9, 10 and 11, which is shown on the wafer. When the color tone of the peripheral area of the location of the detection mark 3 is opposite to that of the non-pattern area 12, the outline of the peripheral area of the location of the detection mark 3 will appear on the wafer, i.e. the location of the mark area 2 will appear on the wafer, which brings a defect risk to the layer or the subsequent process.

Referring to fig. 13, fig. 13 is a schematic diagram of detecting uniformity of placement positions (measurement points) of marks 3 between photomasks. The function of the detection mark 3 is to detect the position deviation of the patterns on the photomasks and realize the position deviation calculation of the patterns among photomasks, so the shape requirements of the detection mark 3 are not pursued to be the same, and the consistency of the placement positions (measuring points) of the detection mark 3 among photomasks is only ensured. Different detection marks 3 can be applied to different environments of different photomasks, the placement freedom degree of the detection marks 3 can be increased, data samples are increased, and the accuracy is improved.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This disclosure is intended to cover any adaptations, uses, or adaptations of the disclosure following the general principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

It is to be understood that the present disclosure is not limited to the precise arrangements and instrumentalities shown in the drawings, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims (10)

1. The method for setting the position of the photomask detection mark is characterized by comprising the following steps:

providing a plurality of photomasks;

dividing a chip area and a cutting channel on the photomask, and dividing a pattern area and a non-pattern area on the chip area of the photomask;

selecting a region of the non-pattern region of one photomask and the non-pattern region of the other photomask as a mark region, and setting detection marks in the mark region.

2. The method of claim 1, wherein the dividing the chip area of the mask into the pattern area and the non-pattern area comprises:

and dividing a plurality of pattern areas in the chip area, wherein the chip area outside the pattern areas forms the non-pattern area.

3. The method according to claim 1, wherein selecting a region of the non-pattern area of one of the masks overlapping with the non-pattern areas of the other mask as a mark area, and setting the detection mark in the mark area includes:

and grouping different photomasks according to the distance between the pattern area and the center of the photomasks, and setting detection marks at the same positions on the outer photomasks in the same group.

4. The method of claim 1, wherein selecting the area overlapping the non-pattern area of one of the masks as the mark area includes:

when the edges of different photomasks are flush in the vertical direction, the overlapping areas of the projections of the non-patterned areas on different photomasks define the location, profile and size of the marking areas.

5. The method of claim 1, wherein the inspection mark has at least two contour boundaries in a first direction and a second direction, the first direction is perpendicular to the second direction, and the number of boundaries of the inspection mark in the first direction and the second direction is an even number.

6. The method for setting positions of inspection marks of a photomask according to claim 1, wherein a maximum distance between two adjacent inspection marks in the first direction and/or the second direction is less than or equal to a maximum measurement window of a corresponding inspection machine.

7. The method of claim 1, wherein the pattern size of the inspection mark is smaller than the minimum resolution of the corresponding wafer exposure machine and/or the pattern size of the inspection mark is larger than the minimum process size of the photomask.

8. A photomask having a detection mark, said photomask having a detection mark comprising: the photomask comprises a photomask body and detection marks arranged on the photomask body, wherein the photomask body comprises a pattern area and a non-pattern area, the pattern area is multiple, the non-pattern area is provided with a marking area, each photomask body is provided with the marking area with the same position, outline and size, and the detection marks are located in the marking area.

9. The mask of claim 8 having inspection marks distributed along the outline of the pattern area.

10. The mask of claim 8, wherein the mark region has a hue corresponding to the hue of the non-pattern region.

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