CN116242503A

CN116242503A - Crystal temperature determining method, apparatus, terminal and computer readable storage medium

Info

Publication number: CN116242503A
Application number: CN202310275574.9A
Authority: CN
Inventors: 申天柏
Original assignee: Purple Light Communication Huizhou Co ltd
Current assignee: Purple Light Communication Huizhou Co ltd
Priority date: 2023-03-20
Filing date: 2023-03-20
Publication date: 2023-06-09

Abstract

The embodiment of the application discloses a method, a device, a terminal and a computer-readable storage medium for determining the temperature of a crystal. The method is applied to a terminal, the terminal comprises a temperature detection circuit and a crystal, the crystal is free of a built-in thermosensitive element, the temperature detection circuit comprises the thermosensitive element, and the temperature detection circuit is used for determining the temperature of the thermosensitive element; the method comprises the following steps: determining a temperature profile of the crystal; determining a first temperature measurement function of the crystal according to a PCB layout relation between the thermosensitive element and the crystal; determining a temperature offset; determining a temperature hysteresis quantity; correcting the first temperature measurement function according to the temperature offset and the temperature hysteresis to obtain a second temperature measurement function; and determining the current temperature of the crystal according to the temperature of the thermosensitive element and the second temperature measurement function. The embodiment of the application is beneficial to accurately acquiring the temperature of the crystal in the terminal.

Description

Crystal temperature determining method, apparatus, terminal and computer readable storage medium

Technical Field

The present invention relates to the field of communications technologies, and in particular, to a method and apparatus for determining a temperature of a crystal, a terminal, and a computer readable storage medium.

Background

In most low-cost terminals, such as terminals of a narrowband internet of things (Narrow Band Internet of Things, NB-IoT) module, a functional machine, etc., a common crystal is generally used to save production cost, and the temperature of the crystal cannot be obtained by the terminal because a thermosensitive element is not built in the common crystal.

Disclosure of Invention

The embodiment of the application provides a method and a device for determining the temperature of a crystal, a terminal and a computer readable storage medium, which are beneficial to accurately acquiring the temperature of the crystal in the terminal.

In a first aspect, an embodiment of the present application provides a method for determining a temperature of a crystal, where the method is applied to a terminal, the terminal includes a temperature detection circuit and a crystal, the crystal has no built-in thermal element, the temperature detection circuit includes a thermal element, and the temperature detection circuit is configured to determine a temperature of the thermal element;

the method comprises the following steps:

determining a temperature characteristic curve of the crystal, wherein the temperature characteristic curve is used for representing frequency deviation of the crystal at different temperatures;

determining a first temperature measurement function of the crystal according to a Printed Circuit Board (PCB) layout relationship between the thermosensitive element and the crystal, wherein the first temperature measurement function is used for indicating a corresponding relationship between the temperature of the thermosensitive element and the temperature of the crystal;

Determining a temperature offset, wherein the temperature offset is used for representing the offset between the temperature of the crystal and the temperature of the crystal obtained by the first temperature measurement function in the process of registering the terminal into a network;

determining temperature hysteresis quantity, wherein the temperature hysteresis quantity is used for representing time differences corresponding to temperature differences of different temperature special curves of the crystal under the same frequency deviation;

correcting the first temperature measurement function according to the temperature offset and the temperature hysteresis to obtain a second temperature measurement function;

and determining the current temperature of the crystal according to the temperature of the thermosensitive element and the second temperature measurement function.

The implementation of the first aspect of the embodiments of the present application has the following beneficial effects:

according to the embodiment of the application, a temperature characteristic curve of the crystal can be determined, the temperature characteristic curve is used for representing frequency deviation of the crystal at different temperatures, a first temperature measurement function of the crystal is determined according to a Printed Circuit Board (PCB) layout relationship between a thermosensitive element and the crystal, the first temperature measurement function is used for indicating a corresponding relationship between the temperature of the thermosensitive element and the temperature of the crystal, a temperature offset is determined, the temperature offset is used for representing the offset between the temperature of the crystal and the temperature of the crystal obtained through the first temperature measurement function in the process of registering a network at a terminal, a temperature hysteresis is determined, the temperature hysteresis is used for representing a time difference corresponding to temperature differences of different temperature characteristic curves of the crystal at the same frequency deviation, the first temperature measurement function is corrected according to the temperature offset and the temperature hysteresis, a second temperature measurement function is obtained, and the current temperature of the crystal is determined according to the temperature of the thermosensitive element and the second temperature measurement function; therefore, for the crystal without the built-in thermosensitive element, the corresponding temperature characteristic curves can be respectively determined, the temperature measuring function is determined according to the PCB layout relation of the thermosensitive element and the crystal, and the current temperature of the crystal is determined through the temperature measuring function, so that the accuracy of the acquired current temperature of the crystal is guaranteed.

In a second aspect, embodiments of the present application provide a temperature determining device of a crystal, which is applied to a terminal, where the terminal includes a temperature detecting circuit and a crystal, the crystal has no built-in thermal element, the temperature detecting circuit includes a thermal element, and the temperature detecting circuit is configured to determine a temperature of the thermal element;

the device comprises:

the first determining unit is used for determining a temperature characteristic curve of the crystal, wherein the temperature characteristic curve is used for representing frequency deviation of the crystal at different temperatures;

a second determining unit, configured to determine a first temperature measurement function of the crystal according to a layout relationship of a printed circuit board PCB between the thermal element and the crystal, where the first temperature measurement function is used to indicate a corresponding relationship between a temperature of the thermal element and a temperature of the crystal;

a third determining unit, configured to determine a temperature offset, where the temperature offset is used to characterize an offset between a temperature of the crystal and a temperature of the crystal obtained by the first temperature measurement function during the process of registering the terminal with the network;

a fourth determining unit, configured to determine a temperature hysteresis, where the temperature hysteresis is used to characterize a time difference corresponding to a temperature difference of different temperature characteristic curves of the crystal under the same frequency offset;

The correction unit is used for correcting the first temperature measurement function according to the temperature offset and the temperature hysteresis quantity to obtain a second temperature measurement function;

and the temperature determining unit is used for determining the current temperature of the crystal according to the temperature of the thermosensitive element and the second temperature measuring function.

In a third aspect, embodiments of the present application provide a terminal, including a processor, a memory, and a computer program or instructions stored on the memory, the processor executing the computer program or instructions to implement the steps in the first aspect of embodiments of the present application.

In a fourth aspect, embodiments of the present application provide a computer-readable storage medium, where the computer-readable storage medium stores a computer program for electronic data exchange, where the computer program causes a computer to execute instructions of some or all of the steps as described in the first aspect of the embodiments of the present application.

In a fifth aspect, embodiments of the present application provide a computer program product, wherein the computer program product comprises a computer program operable to cause a computer to perform some or all of the steps as described in the first aspect of the embodiments of the present application.

The technical effects of the second to fifth aspects may be seen in the technical effects of the first aspect, and are not described here again.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a terminal according to an embodiment of the present application;

FIG. 2 is a schematic flow chart of a method for determining the temperature of a crystal according to an embodiment of the present application;

FIG. 3 is a schematic diagram of a temperature detection circuit provided in an embodiment of the present application;

FIG. 4 is a schematic view of a temperature characteristic curve of a crystal according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a testing device according to an embodiment of the present application;

FIG. 6 is a schematic diagram of a PCB layout of a crystal and a thermal element according to an embodiment of the present application;

FIG. 7 is a schematic diagram of a PCB layout of a crystal and a thermal element according to an embodiment of the present application;

FIG. 8 is a schematic diagram of a PCB layout of a crystal and a thermal element provided in an embodiment of the present application;

FIG. 9 is a schematic diagram of a PCB layout of a crystal and a thermal element provided in an embodiment of the present application;

FIG. 10 is a schematic diagram of a PCB layout of a crystal and a thermal element provided in an embodiment of the present application;

FIG. 11 is a schematic diagram of a temperature profile provided by an embodiment of the present application;

FIG. 12 is a schematic diagram of a temperature hysteresis provided by embodiments of the present application;

FIG. 13 is a schematic diagram of a crystal temperature determining device according to an embodiment of the present disclosure;

fig. 14 is a schematic structural diagram of a terminal according to an embodiment of the present application.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

The terms "first," "second," "third," and "fourth" and the like in the description and in the claims of this application and in the drawings, are used for distinguishing between different objects and not for describing a particular sequential order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, result, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

1. Terminal

The terminal in the present application may include an electronic device, a User Equipment (UE), a smart Phone (such as an Android mobile Phone, an iOS mobile Phone, a Windows Phone mobile Phone, etc.), a function machine, a tablet computer, a palm computer, a notebook computer, a mobile internet device MID (Mobile Internet Devices, abbreviated as MID), a wearable device, a mobile communication module (such as NB-IoT, CAT1, etc.), and the terminal may further include a server, which is not limited herein. The above terminals are merely examples and are not intended to be exhaustive and include, but are not limited to, the above terminals.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a terminal according to an embodiment of the present application. The terminal comprises a processor and a memory etc.

Wherein the memory is coupled to the processor. The Processor is a control center of the terminal, and is connected to various parts of the whole terminal by various interfaces and lines, and performs various functions and processes of the terminal by running or executing software programs and/or modules stored in a memory and calling data stored in the memory, so as to monitor the terminal as a whole, and the Processor may be a central processing unit (Central Processing Unit/Processor, CPU), a graphic processing unit (Graphics Processing Unit, GPU) or a network processing unit (Neural-network Processing Unit, NPU).

The memory is used for storing software programs and/or modules, and the processor executes various functional applications of the terminal by running the software programs and/or modules stored in the memory. The memory may include a program including a flow execution function for executing the present scheme. The memory may further include a storage program area and a storage data area, wherein the storage program area may store an operating system, software programs required for at least one function, and the like; the storage data area may store data created according to the use of the terminal, etc. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other volatile solid-state storage device.

2. Crystal temperature determining method

1. Description of the invention

At present, a common crystal is used in the terminal to save the production cost, and the common crystal can not accurately provide the crystal temperature for the terminal, so that the temperature coefficient of the terminal can not be calibrated when leaving a factory. In the process of registering a network by using a terminal, the terminal is difficult to know the accurate temperature of a crystal and has no frequency offset curve for reference, so that the terminal is easy to search for network signals for a long time under the condition of high and low temperature, and the efficiency of registering the network is low.

Referring to fig. 2, fig. 2 is a flow chart of a method for determining a temperature of a crystal according to an embodiment of the present application. The method is applied to a terminal, the terminal comprises a temperature detection circuit and a crystal, the crystal is not provided with a built-in thermosensitive element, the temperature detection circuit comprises the thermosensitive element, and the temperature detection circuit is used for determining the temperature of the thermosensitive element.

For example, referring to fig. 3, the temperature detection circuit of the terminal includes, but is not limited to: rf_temp_adc, board_temp_adc, osc_temp_adc, temperature detection circuitry for the battery, etc. Wherein the RF TEMP ADC is typically placed near a power amplifier in a radio frequency front end in a wireless communication system for temperature compensation of the couple. The Board_TEMP_ADC is positioned variably and is placed flexibly. Osc_temp_adc is built into the chip oscillator circuit, generally closest to the crystal (XTAL). The temperature detection circuit for the battery is arranged at the edge of the PCB.

In some possible embodiments, the temperature of the Oscillator (OSC) measured by osc_temp_adc may also be used instead of the temperature of the crystal, and the crystal temperature may be corrected according to the thermal simulation results in different application scenarios.

The method for determining the temperature of the crystal provided by the embodiment of the application comprises the following steps:

s201, determining a temperature characteristic curve of the crystal, wherein the temperature characteristic curve is used for representing frequency deviation of the crystal at different temperatures.

It will be appreciated that the temperature profile varies from crystal to crystal, but can be described by a cubic function as follows:

F＝c3*(t-t0)^3+c2*(t-t0)^2+c1*(t-t0)+c0；

wherein F is frequency offset (dependent variable), t is the current temperature (independent variable) of the crystal, t0 is the reference temperature (such as normal temperature 25), and c0, c1, c2 and c3 are temperature coefficients of each stage.

For example, referring to fig. 4, fig. 4 is a schematic diagram of a temperature characteristic curve of a crystal according to an embodiment of the present application.

In the embodiment of the present application, the temperature characteristic curves of different crystals may be obtained by the test apparatus shown in fig. 5. The frequency deviation in the temperature characteristic curve can be measured by a data acquisition instrument and a frequency spectrograph (or a comprehensive measuring instrument), and a temperature reference source is provided by a temperature regulating box. The specific operation steps are as follows:

1) And setting the terminal to a test mode, only keeping the radio frequency minimum system to work, and not transmitting radio frequency signals by the terminal.

2) And placing the terminal into a temperature regulating box.

3) And controlling the temperature regulating box to enter a specified temperature, and recording the current temperature when the temperature is stable.

4) Through communication interface (such as phone command interface) and the like, the control terminal transmits radio frequency signals with minimum power, obtains frequency deviation corresponding to the current temperature after analysis by the comprehensive tester, and records the frequency deviation to the computer.

5) The terminal turns off the radio frequency signal.

6) And switching the temperature regulating box to the next temperature point, and repeating the steps 2-5 until the temperature point in the working temperature range of the terminal is completely recorded.

The key points of the operation process are as follows:

1) The terminal itself should be reduced as much as possible during operation, for example, the terminal is set in a test mode, only the minimum system operation of the radio frequency is maintained, the radio frequency transmitting state of the terminal is a normally off state, the terminal transmits at a minimum power level when transmitting radio frequency signals, the terminal is turned off after the transmission is completed, and so on.

2) When switching to the next temperature point, it takes a waiting time for the temperature to stabilize. (while determining the temperature hysteresis for the following reference)

Further, for the temperature characteristic curve obtained by the above operation, it can be judged whether it is accurate or not by: when the current temperature is 25 ℃, if the frequency deviation is 0, the finally generated temperature characteristic curve is accurate. It will be appreciated that the crystal is part of a digitally compensated crystal oscillator (Digital Controlled Crystal Oscillator, DCXO) that is to be frequency offset calibrated when the DCXO is shipped, i.e., the terminal is placed in a temperature regulation box at 25 degrees celsius and set into a calibration mode, the coarse tuning capacitance (Capacitor Digital-to-Analog Converter, CDAC) value inside the terminal is adjusted so that the frequency offset at 25 degrees celsius is 0, and the corresponding CDAC value is saved to the terminal. Thus, whether the finally generated temperature characteristic curve is correct can be determined by judging whether the frequency deviation of the temperature characteristic curve at 25 ℃ is 0.

S202, determining a first temperature measurement function of the crystal according to the PCB layout relation between the thermosensitive element and the crystal, wherein the first temperature measurement function is used for indicating the corresponding relation between the temperature of the thermosensitive element and the temperature of the crystal.

It will be appreciated that the thermal element is in a different layout relationship with the crystal on the printed circuit board (Printed Circuit Board, PCB) and that the corresponding temperature measurement function of the crystal is different.

In the design of the PCB layout, in order to make the heat distribution of the PCB uniform, a complete ground plane (as shown in FIG. 6) needs to be arranged in the area where the heat sensitive element and the crystal are located, and the more the number of layers of the ground plane is, the more the heat dissipation of the PCB is facilitated. In addition, a through hole needs to be connected to the ground plane near the thermosensitive element, so that rapid transmission of temperature is facilitated. In addition, if the temperature sensing element and the crystal are not provided with other heat sources, the temperature measurement accuracy can be ensured.

S203, determining a temperature offset, wherein the temperature offset is used for representing the offset between the temperature of the crystal and the temperature of the crystal obtained through the first temperature measurement function in the process of registering the terminal in the network.

It will be appreciated that although the calculated temperature of the thermistor substantially reflects the temperature of the crystal, in practice, since the wafer in the crystal is protected by the susceptor and the housing, and the crystal is of a three-dimensional structure, the temperature is graded during the outward heat dissipation of the crystal. Since the first temperature measurement function is a linear calculation, or there are cases where the position of the crystal and the position of the thermosensitive element are not on the same line (described in detail below), it is also necessary to correct the temperature offset of the first temperature measurement function.

S204, determining temperature hysteresis quantity, wherein the temperature hysteresis quantity is used for representing time differences corresponding to temperature differences of different temperature special curves of the crystal under the same frequency deviation.

It will be appreciated that the ADC voltage value of the temperature detection circuit may directly reflect the temperature of the location of the thermal element during the temperature increase or decrease. But the temperature rise and fall of the wafer in the crystal is relatively retarded. Therefore, correction of the temperature hysteresis is also required.

S205, correcting the first temperature measurement function according to the temperature offset and the temperature hysteresis to obtain a second temperature measurement function.

S206, determining the current temperature of the crystal according to the temperature of the thermosensitive element and the second temperature measuring function.

In a specific implementation, a temperature characteristic curve of the crystal can be determined through a testing device shown in fig. 5, a first temperature measurement function of the crystal is determined according to a PCB layout relation between the thermosensitive element and the crystal, the first temperature measurement function is corrected according to a temperature offset and a temperature hysteresis quantity, a second temperature measurement function is obtained, and the current temperature of the crystal is determined according to the temperature of the thermosensitive element and the second temperature measurement function.

According to the temperature characteristic curve and the current temperature of the crystal, the frequency deviation at the current temperature can be determined. According to the frequency offset, an automatic frequency control (automatic frequency control, AFC) compensation value corresponding to the current temperature can be calculated and used as a preset value of the cell search network signal. The phase-locked loop (Phase Locked Loop, PLL) circuit is compensated according to the preset value, and the cell search is performed again. After successful network injection, the AFC value can be adjusted according to the actual cell network signal, so that the signal capacity of the downlink reference model demodulated at the current temperature reaches the peak value, and the stability of network communication is ensured.

By implementing the embodiment of the application, the following beneficial effects are achieved:

according to the embodiment of the application, a temperature characteristic curve of the crystal can be determined, the temperature characteristic curve is used for representing frequency deviation of the crystal at different temperatures, a first temperature measurement function of the crystal is determined according to a PCB layout relation between the thermosensitive element and the crystal, the first temperature measurement function is used for indicating a corresponding relation between the temperature of the thermosensitive element and the temperature of the crystal, a temperature offset is determined, the temperature offset is used for representing the offset between the temperature of the crystal and the temperature of the crystal obtained through the first temperature measurement function in the process of registering a network at a terminal, a temperature hysteresis is determined, the temperature hysteresis is used for representing the time difference corresponding to the temperature difference of the different temperature characteristic curves of the crystal under the same frequency deviation, the first temperature measurement function is corrected according to the temperature offset and the temperature hysteresis, a second temperature measurement function is obtained, and the current temperature of the crystal is determined according to the temperature of the thermosensitive element and the second temperature measurement function; therefore, for the crystals without built-in thermosensitive elements, the corresponding temperature characteristic curves can be respectively determined, the temperature measuring function is determined according to the PCB layout relation of the thermosensitive elements and the crystals, the current temperature of the crystals is determined through the temperature measuring function, accuracy of the obtained current temperature of the crystals is guaranteed, accordingly, the terminal can accurately calculate the corresponding frequency deviation according to the temperature characteristic curves and the current temperature of the crystals, and efficiency of terminal net injection is improved.

In addition, for the crystal with the built-in thermosensitive element, the temperature determining method provided by the embodiment of the application is used for optimization, so that the accuracy of the measured crystal temperature is ensured.

2. Detailed description of the preferred embodiments

The technical scheme, beneficial effects and the like related to the embodiment of the application are specifically described below.

1) How to determine the first temperature measurement function of the crystal according to the PCB layout relation between the thermosensitive element and the crystal

Some embodiments of how to determine the first temperature measurement function of the crystal according to the PCB layout relationship between the thermosensitive element and the crystal are specifically described below.

In some possible embodiments, the PCB layout relationship between the thermal element and the crystal includes:

the crystal and the thermosensitive element are symmetrically distributed on the front side and the back side of the PCB; or alternatively, the first and second heat exchangers may be,

the crystal is positioned between the two thermosensitive elements on the PCB; or alternatively, the first and second heat exchangers may be,

the crystal is located between three or more heat sensitive elements on the PCB.

It should be noted that, as shown in fig. 6-10, the crystals and the heat-sensitive elements are symmetrically distributed on both sides of the PCB in fig. 6, the crystals (XTAL) are located between two heat-sensitive elements (NTC 1 and NTC 2) on the PCB in fig. 7-8, and the crystals (XTAL) are located between three or more heat-sensitive elements (NTC 3, NTC4, NTC5, etc.) on the PCB in fig. 9-10.

Referring to fig. 6, in some possible embodiments, the step S202 of determining a first temperature measurement function of the crystal according to the PCB layout relationship between the heat-sensitive element and the crystal, where the first temperature measurement function is used to indicate a corresponding relationship between the temperature of the heat-sensitive element and the temperature of the crystal may include the following steps:

s2021, if the crystal and the thermosensitive element are symmetrically distributed on the front and back sides of the PCB, the first temperature measurement function is F (t) =N (t);

wherein F (t) is the temperature of the crystal, N (t) is the temperature of the thermosensitive element, and t is the time.

As described above, the heat-sensitive element and the crystal have a complete ground plane in the region, and the heat-sensitive element is connected to the ground plane by the through holes near the heat-sensitive element, so that if the crystal and the heat-sensitive element are symmetrically distributed on the front and back sides of the PCB, the temperature between the heat-sensitive element and the crystal is relatively close, and the first temperature measurement function is F (t) =n (t).

Referring to fig. 7-8, in some possible embodiments, the step S202 of determining a first temperature measurement function of the crystal according to the PCB layout relationship between the heat-sensitive element and the crystal, where the first temperature measurement function is used to indicate a corresponding relationship between the temperature of the heat-sensitive element and the temperature of the crystal may include the following steps:

S2022, if the crystal is located between two heat-sensitive elements on the PCB, the first temperature measurement function is F (t) =n1 (t) + [ N2 (t) -N1 (t) ]xl 1/(l1+l2);

wherein F (t) is the temperature of the crystal, N1 (t) is the temperature of a first thermal element NTC1 of the two thermal elements, N2 (t) is the temperature of a second thermal element NTC2 of the two thermal elements, L1 is the distance between the crystal and the first thermal element NTC1 on the PCB, L2 is the distance between the crystal and the second thermal element NTC2 on the PCB, and t is time.

The measurement of the position of the element is based on the geometric center of the element. In fig. 7, the geometric center of the crystal is exactly on the line connecting the geometric centers of the two thermosensitive elements, and in fig. 8, the geometric center of the crystal is offset from the line connecting the geometric centers of the two thermosensitive elements. The two cases can be combined because there is a calibration step of temperature shift when the first temperature measurement function is corrected later, so there is one L _offset May also be calibrated in.

Referring to fig. 9, in some possible embodiments, the step S202 of determining a first temperature measurement function of the crystal according to the PCB layout relationship between the heat-sensitive element and the crystal, where the first temperature measurement function is used to indicate a corresponding relationship between the temperature of the heat-sensitive element and the temperature of the crystal may include the following steps:

S2023, if the crystal is located between three thermal elements on the PCB, the first temperature measurement function is F (t, x, y) = - (D/C) - (B/C) ×y- (A/C) ×x,

A＝(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t))，

B＝(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t))，

C＝(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t))，

D＝-(A*X1+B*Y1+C*N1(t))；

wherein F (t) is the temperature of the crystal, t is the time, X1 is the abscissa of the third thermal element NTC3 of the three thermal elements, X2 is the abscissa of the fourth thermal element NTC4 of the three thermal elements, X3 is the abscissa of the fifth thermal element NTC5 of the three thermal elements, Y1 is the ordinate of the third thermal element NTC3, Y2 is the ordinate of the fourth thermal element NTC4, and Y3 is the ordinate of the fifth thermal element NTC 5.

In a specific implementation, a plane equation a x+b x+c x z+d=0 may be generated according to coordinates of three thermosensitive elements. For example, the coordinates and temperatures of the three thermosensitive elements M1, M2, and M3 are shown in table 1:

TABLE 1 coordinates and temperatures of thermal elements M1, M2 and M3

The plane equation can be obtained by linear algebraic calculation:

A＝(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t))，

B＝(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t))，

C＝(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t))，

D＝-(A*X1+B*Y1+C*N1(t))；

thus, the first temperature measurement function of the crystal is F (t, x, y) = - (D/C) - (B/C) y- (a/C) x.

For example, the coordinates and temperature of the following three heat-sensitive elements are known:

	M1	M2	M3
				abscissa X of thermosensitive element	0.9	2.5	0.3
Ordinate Y of thermosensitive element	0.7	1.5	1.9
				Temperature Z of thermosensitive element	30	20	18

Table 2 examples of coordinates and temperatures of the thermosensitive elements M1, M2, and M3

The plane equation is 2.4 x+25.2 x y+2.4 x z-92=0 by linear algebraic calculation. Therefore, the temperature at any point in the region is F (x, y) =38.25-x-10.5 x y, and the current temperature of the crystal can be obtained by substituting the coordinates of the crystal in the plane. A schematic diagram of the temperature distribution of the current plane is shown in fig. 11.

Referring to fig. 10, in some possible embodiments, the crystal is located between more than three heat sensitive elements on the PCB. In this case, the final temperature distribution chart may be a curved surface, so that the current temperature of the crystal may be calculated by fitting a curved surface according to a certain rule, or may be calculated by using three heat sensitive elements nearest to the crystal as references according to the above plane equation, which is not limited herein.

It can be seen that in the above embodiments of the present application, in the case that the crystal has no built-in heat-sensitive element, the first temperature measurement function of the crystal is determined according to the PCB layout relationship between the heat-sensitive element and the crystal, which is helpful to accurately determine the first temperature measurement function of the crystal in different layout modes.

2) How to determine the temperature offset

Some embodiments of how the temperature offset is determined are described in detail below.

In some possible embodiments, the step of determining the temperature offset used to characterize the offset between the temperature of the crystal during the registration of the terminal with the network and the temperature of the crystal obtained by the first temperature measurement function in S203 may include the steps of:

s2031, acquiring a first frequency offset corresponding to a first AFC value in the process of registering the terminal in the network, wherein the first AFC value represents an AFC value required by the signal energy of a downlink reference signal demodulated by the terminal to reach a peak value.

S2032, determining a first temperature value of the crystal according to the first frequency deviation and the temperature characteristic curve, wherein the first temperature value represents the temperature of the crystal in the process of registering the terminal in the network.

S2033, determining a second temperature value of the crystal according to the temperature of the thermosensitive element and the first temperature measurement function.

S2034, a difference between the first temperature value and the second temperature value is used as a temperature offset.

In the specific implementation, after the terminal is started normally, a test instrument is connected through signaling, so that the terminal can register the network. After the terminal works normally for a period of time and the temperature is stabilized, the internal AFC circuit of the terminal compensates based on the frequency deviation of the crystal caused by the current temperature, and the first frequency deviation of the crystal at the current temperature can be obtained according to the value (first AFC value) of the AFC compensation. And determining a first temperature value T1 of the crystal according to the first frequency deviation and a temperature characteristic curve of the crystal, namely, determining the current temperature of the crystal in the process of registering the terminal into the network.

The temperature of the thermistor in the temperature detection circuit is determined, and a second temperature value T2 of the crystal is determined based on the temperature of the thermistor and the first temperature measurement function. Specifically, the temperature of the thermosensitive element may be determined by: and acquiring an ADC voltage value of the temperature detection circuit, and determining the temperature of the thermosensitive element according to the corresponding relation between the ADC voltage value and the temperature of the thermosensitive element. More specifically, the correspondence between the ADC voltage value and the temperature of the thermosensitive element may be obtained by the testing device shown in fig. 5, and the specific operation steps are substantially the same as those described above, and the ADC voltage value of each temperature sampling circuit at the current temperature is recorded through a communication interface (e.g. a phone command interface, etc.), and an ADC voltage-temperature curve may be drawn according to the correspondence between the temperature and the ADC voltage value.

The difference between the first temperature value T1 and the second temperature value T2 is taken as a temperature offset, i.e. offset=t1-T2. As described above, the first temperature value T1 is the temperature of the crystal during the network registration process of the terminal, the second temperature value T2 is the temperature of the crystal obtained by the first temperature measurement function, and the difference between the two temperatures is the offset of the first temperature measurement function during the actual application process. Therefore, the temperature measurement function after temperature offset correction is: t (T) _1XTAL ＝F(t)+offset。

Further, by adjusting the magnitude of the transmit power of the terminal, S2031 to S2034 are repeated to obtain a plurality of temperature offset amounts offset, and consistency of the temperature offset amounts offset is checked.

It can be seen that in the embodiment of the present application, during a process of registering a terminal in a network, a first frequency offset corresponding to a first AFC value may be obtained, where the first AFC value represents an AFC value required for a signal energy of a downlink reference signal demodulated by the terminal to reach a peak value, a first temperature value of a crystal is determined according to the first frequency offset and a temperature characteristic curve, the first temperature value represents a temperature of the crystal during the process of registering the terminal in the network, a second temperature value of the crystal is determined according to a temperature of a thermal element and a first temperature measurement function, and a difference value between the first temperature value and the second temperature value is used as a temperature offset; therefore, the temperature deviation correction is carried out on the temperature measurement function, the accuracy of the current temperature of the finally obtained crystal is guaranteed, the frequency deviation corresponding to the current temperature is calculated accurately, and the efficiency of terminal net injection is improved.

3) How to determine the temperature hysteresis

Some embodiments of how to determine the temperature hysteresis are described in detail below.

In some possible embodiments, the step of determining the temperature hysteresis in S204, where the temperature hysteresis is used to characterize the time difference corresponding to the temperature difference of different temperature characteristic curves of the crystal under the same frequency offset, may include the following steps:

S2041, placing the terminal in a temperature regulating box, and regulating the temperature of the temperature regulating box to obtain a target temperature characteristic curve of the crystal.

S2042, calculating the temperature difference between the target temperature characteristic curve and the temperature characteristic curve of the crystal when the frequency deviation is a preset value.

And S2043, taking the time difference corresponding to the temperature difference as the temperature hysteresis.

For example, the temperature of the temperature adjusting box can be set below-40 degrees (such as-42 degrees), after the temperature is stabilized, the terminal is placed in the temperature adjusting box, the temperature adjusting box is controlled to rise according to a certain temperature gradient, for example, the temperature gradient is 120 degrees/2 hours = 1 degree/minute when the temperature of the temperature adjusting box is increased from-40 degrees to 80 degrees in two hours.

Referring to fig. 12, a delay of a certain time is found by comparing the temperature characteristic curve measured in S201 with the temperature characteristic curve measured in the temperature rising process, that is, the temperature when the frequency deviation passes through the 0 point is different, for example, the temperature difference passing through the 0 point is 2 degrees, and the delay h=2 minutes can be obtained according to the temperature rising slope.

Therefore, the temperature measurement function after temperature hysteresis correction is: t (T) _2XTAL =f (t-H). For example, F (t-2) may represent the temperature of XTAL as the temperature at which the ADC voltage was sampled 2 minutes ago. The temperature measurement function after temperature offset correction and temperature hysteresis correction is as follows: t (T) _XTAL ＝F(t-H)+offset。

Similarly, the temperature hysteresis in the cooling process can be obtained, and the temperature regulating box is cooled according to a certain temperature slope in the cooling process, so that the description is omitted.

It can be seen that in the embodiment of the present application, a terminal may be placed in a temperature adjustment box, the temperature of the temperature adjustment box is adjusted to obtain a target temperature characteristic curve of a crystal, a temperature difference between the target temperature characteristic curve and the temperature characteristic curve of the crystal when the frequency deviation is a preset value is calculated, and a time difference corresponding to the temperature difference is used as a temperature hysteresis quantity; therefore, the temperature hysteresis quantity is used for correcting the hysteresis of the temperature rise and the temperature fall of the wafer in the crystal, so that the accuracy of the current temperature of the finally obtained crystal is ensured, the frequency offset corresponding to the current temperature is accurately calculated, and the efficiency of terminal net injection is improved.

4) How to optimize and apply the second thermometric function

Some embodiments of how the second thermometry function is optimized and applied are described in detail below.

Understandably, T _XTAL The =f (t-H) +offset is obtained in a relatively fixed environment, and in practical applications (including line calibration), temperature jump occurs, so that F (t) needs to be subjected to integral filtering processing, and the temperature jump with a larger amplitude is smoothly passivated, so that the length of the integral time can be adjusted according to practical situations.

Further, since there are many modules in the terminal, such as a radio frequency front End (Radio Frequency Front-End, RFFE) module, a wireless communication network (Wireless Communication Network, WCN) module, a liquid crystal display module, a charging module, and the like, the calling combinations of these modules in different application scenarios are different, which may cause the change of factors affecting the crystal temperature. Therefore, further optimization can be specifically done for these application scenarios to ensure accuracy of the measured current temperature of the crystal.

In a specific implementation, for a terminal of a temperature characteristic curve of a measured crystal, under the condition that a network has been successfully registered in a certain application scene, an AFC compensation value of the terminal corresponds to a frequency offset, and a current temperature value T of the crystal can be obtained according to the temperature characteristic curve _a (there must be a general temperature range). The current temperature value T of the crystal to be measured _a And T is _XTAL The comparison of the results of =f (t-H) +offset can be used to know the difference between the temperature measurement function and the actual temperature measurement function, so as to obtain the temperature offset offset (scenario) in each application scenario. The optimized temperature measurement function is as follows: t (T) _XTAL (t, scenario) =f (t-H) + offset (scenario). The optimized temperature measurement function can be implanted into software for subsequent production and network searching of other terminals.

3. Temperature determining device for crystal

1) Description of the invention

The foregoing description of the embodiments of the present application has been presented primarily in terms of a method-side implementation. It will be appreciated that, in order to implement the above-described functions, the terminal may comprise hardware structures and/or software modules that perform the respective functions. Those of skill in the art will appreciate that the various illustrative methods, functions, modules, elements, or steps described in connection with the embodiments disclosed herein may be implemented as hardware or combinations of hardware and computer software. Whether a method, function, module, unit, or step is implemented as hardware or computer software driven hardware depends upon the particular application and design constraints imposed on the solution. Those skilled in the art may implement the described methods, functions, modules, units, or steps using different methods for each particular application, but such implementation should not be considered beyond the scope of the present application.

The embodiment of the application can divide functional units/modules according to the method example. For example, each functional unit/module may be divided corresponding to each function, or two or more functions may be integrated in one functional unit/module. The integrated functional units/modules described above may be implemented in hardware or in software. It should be noted that the division of the functional units/modules in the embodiments of the present application is schematic, but only one logic function is divided, and another division manner may be implemented in actual implementation.

In the case of using an integrated unit, please refer to fig. 13, fig. 13 is a block diagram showing functional units of a crystal temperature determining apparatus according to an embodiment of the present application. The temperature determining apparatus 1300 of the crystal includes: a first determination unit 1301, a second determination unit 1302, a third determination unit 1303, a fourth determination unit 1304, a correction unit 1305, and a temperature determination unit 1306.

In some possible implementations, the first determining unit 1301, the second determining unit 1302, the third determining unit 1303, the fourth determining unit 1304, the correcting unit 1305, and the temperature determining unit 1306 may be separate units from each other, and may be integrated in the same unit.

For example, the first determination unit 1301, the second determination unit 1302, the third determination unit 1303, the fourth determination unit 1304, the correction unit 1305, and the temperature determination unit 1306 may be integrated in a processing unit.

It should be noted that the processing unit may be a processor or a controller, and may be, for example, a central processing unit (central processing unit, CPU), a general purpose processor, a digital signal processor (digital signal processor, DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (field programmable gate array, FPGA), or other programmable logic device, a transistor logic device, a hardware component, or any combination thereof. Which may implement or perform the various exemplary logical blocks, modules, and circuits described in connection with the present disclosure. The processing unit may also be a combination that implements computing functionality, e.g., comprising one or more microprocessor combinations, a combination of DSPs and microprocessors, etc.

In some possible implementations, the temperature determining device 1300 of the crystal may further include a storage unit for storing a computer program or instructions executed by the temperature determining device 1300 of the crystal. The memory unit may be a memory.

In some possible designs, the temperature determining device 1300 of the crystal may be a chip/chip module/processor/device/operating system.

In particular implementation, the first determining unit 1301, the second determining unit 1302, the third determining unit 1303, the fourth determining unit 1304, the correcting unit 1305, and the temperature determining unit 1306 are configured to perform the steps described in the above method embodiments. The following is a detailed description.

A first determining unit 1301, configured to determine a temperature characteristic curve of the crystal, where the temperature characteristic curve is used to characterize frequency deviation of the crystal at different temperatures;

a second determining unit 1302, configured to determine a first temperature measurement function of the crystal according to a layout relationship of the printed circuit board PCB between the thermosensitive element and the crystal, where the first temperature measurement function is used to indicate a corresponding relationship between a temperature of the thermosensitive element and a temperature of the crystal;

a third determining unit 1303, configured to determine a temperature offset, where the temperature offset is used to characterize an offset between a temperature of the crystal during the registration of the terminal with the network and a temperature of the crystal obtained by the first temperature measurement function;

A fourth determining unit 1304, configured to determine a temperature hysteresis amount, where the temperature hysteresis amount is used to characterize a time difference corresponding to a temperature difference of different temperature characteristic curves of the crystal under the same frequency offset;

a correction unit 1305, configured to correct the first temperature measurement function according to the temperature offset and the temperature hysteresis, so as to obtain a second temperature measurement function;

a temperature determining unit 1306 for determining the current temperature of the crystal according to the temperature of the thermosensitive element and the second temperature measuring function.

It can be seen that, according to the embodiment of the application, a temperature characteristic curve of the crystal can be determined, the temperature characteristic curve is used for representing frequency deviation of the crystal at different temperatures, a first temperature measurement function of the crystal is determined according to a PCB layout relation between the thermosensitive element and the crystal, the first temperature measurement function is used for indicating a corresponding relation between the temperature of the thermosensitive element and the temperature of the crystal, a temperature offset is determined, the temperature offset is used for representing an offset between the temperature of the crystal and the temperature of the crystal obtained through the first temperature measurement function in the process of registering a network at a terminal, a temperature hysteresis is determined, the temperature hysteresis is used for representing a time difference corresponding to temperature differences of different temperature characteristic curves of the crystal under the same frequency deviation, the first temperature measurement function is corrected according to the temperature offset and the temperature hysteresis, a second temperature measurement function is obtained, and the current temperature of the crystal is determined according to the temperature of the thermosensitive element and the second temperature measurement function; therefore, for the crystals without built-in thermosensitive elements, the corresponding temperature characteristic curves can be respectively determined, the temperature measuring function is determined according to the PCB layout relation of the thermosensitive elements and the crystals, the current temperature of the crystals is determined through the temperature measuring function, accuracy of the obtained current temperature of the crystals is guaranteed, accordingly, the terminal can accurately calculate the corresponding frequency deviation according to the temperature characteristic curves and the current temperature of the crystals, and efficiency of terminal net injection is improved.

It should be noted that, for specific implementation of each operation performed by the crystal temperature determining apparatus 1300, reference may be made to the corresponding description of the above method embodiment, which is not repeated herein.

2) Other possible implementations

Some of the implementations involved are described below, and other details not involved may be specifically described above, which will not be repeated.

In some possible embodiments, in determining the temperature offset, the third determining unit 1303 is configured to:

in the process of registering a network by a terminal, acquiring a first frequency offset corresponding to a first AFC value, wherein the first AFC value represents an AFC value required by the signal energy of a downlink reference signal demodulated by the terminal to reach a peak value;

determining a first temperature value of the crystal according to the first frequency deviation and the temperature characteristic curve, wherein the first temperature value represents the temperature of the crystal in the process of registering the terminal in the network;

determining a second temperature value of the crystal according to the temperature of the thermosensitive element and the first temperature measurement function;

the difference between the first temperature value and the second temperature value is taken as a temperature offset.

In some possible embodiments, in determining the temperature hysteresis amount, the fourth determining unit 1304 is configured to:

when the terminal is placed in a temperature regulating box, the temperature of the temperature regulating box is regulated to obtain a target temperature characteristic curve of the crystal;

Calculating the temperature difference between the target temperature characteristic curve and the temperature characteristic curve of the crystal when the frequency deviation is a preset value;

the time difference corresponding to the temperature difference is used as the temperature hysteresis.

In some possible embodiments, the second determining unit 1302 is configured to, in determining the first temperature measurement function of the crystal according to the PCB layout relationship between the heat sensitive element and the crystal:

if the crystal and the thermosensitive element are symmetrically distributed on the front side and the back side of the PCB, the first temperature measurement function is F (t) =N (t);

if the crystal is located between two heat sensitive elements on the PCB, the first temperature measurement function is F (t) =n1 (t) + [ N2 (t) -N1 (t) ]xl 1/(l1+l2);

Wherein F (t) is the temperature of the crystal, N1 (t) and N2 (t) are the temperature of the thermosensitive element, L1 is the distance between the crystal and the thermosensitive element N1, L2 is the distance between the crystal and the thermosensitive element N2, and t is the time.

if the crystal is located between three heat sensitive elements on the PCB, the first temperature measurement function is F (t, x, y) = - (D/C) - (B/C) ×y- (a/C) ×x,

A＝(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t))，

B＝(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t))，

C＝(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t))，

D＝-(A*X1+B*Y1+C*N1(t))；

wherein F (t) is the temperature of the crystal, t is the time, X1, X2, X3 are the abscissas of the thermosensitive element, and Y1, Y2, Y3 are the ordinates of the thermosensitive element.

4. Yet another terminal

1) Description of the invention

A terminal according to an embodiment of the present application is described below. Referring to fig. 14, fig. 14 is a schematic structural diagram of a terminal according to an embodiment of the present application. Terminal 1400 includes a processor 1410, a memory 1420, and at least one communication bus for connecting processor 1410, memory 1420.

In some possible implementations, the processor 1410 may be one or more Central Processing Units (CPUs). In the case where the processor 1410 is one CPU, the CPU may be a single core CPU or a multi-core CPU. Memory 1420 includes, but is not limited to, random access memory (random access memory, RAM), read-only memory (ROM), erasable programmable read-only memory (erasable programmable read only memory, EPROM), or portable read-only memory (compact disc read-only memory, CD-ROM), and memory 1420 is used to store computer programs or instructions 1421.

In some possible implementations, terminal 1400 also includes a communication interface for receiving and transmitting data.

In some possible implementations, the processor 1410 in the terminal 1400 is configured to execute a computer program or instructions 1421 stored in the memory 1420 to implement the steps of:

determining a first temperature measurement function of the crystal according to the PCB layout relation between the thermosensitive element and the crystal, wherein the first temperature measurement function is used for indicating the corresponding relation between the temperature of the thermosensitive element and the temperature of the crystal;

determining a temperature offset, the temperature offset being used to characterize an offset between a temperature of the crystal during registration of terminal 1400 with the network and a temperature of the crystal obtained by the first temperature measurement function;

determining temperature hysteresis quantity which is used for representing time differences corresponding to temperature differences of different temperature special curves of the crystal under the same frequency deviation;

and determining the current temperature of the crystal according to the temperature of the thermosensitive element and the second temperature measuring function.

It can be seen that, in the terminal 1400 provided by the embodiment of the present application, a temperature characteristic curve of a crystal can be determined, the temperature characteristic curve is used for representing frequency deviation of the crystal at different temperatures, according to a PCB layout relationship between a thermosensitive element and the crystal, a first temperature measurement function of the crystal is determined, the first temperature measurement function is used for indicating a corresponding relationship between a temperature of the thermosensitive element and a temperature of the crystal, a temperature offset is determined, the temperature offset is used for representing an offset between a temperature of the crystal and a temperature of the crystal obtained through the first temperature measurement function in a process of registering the terminal 1400 with the network, a temperature hysteresis is determined, the temperature hysteresis is used for representing a time difference corresponding to a temperature difference of different temperature characteristic curves of the crystal at the same frequency deviation, the first temperature measurement function is corrected according to the temperature offset and the temperature hysteresis, a second temperature measurement function is obtained, and a current temperature of the crystal is determined according to the temperature of the thermosensitive element and the second temperature measurement function; in this way, for the crystal without the built-in thermosensitive element, the corresponding temperature characteristic curves can be respectively determined, the temperature measuring function is determined according to the PCB layout relation of the thermosensitive element and the crystal, and the current temperature of the crystal is determined through the temperature measuring function, so that the accuracy of the obtained current temperature of the crystal is ensured, the terminal 1400 is facilitated to accurately calculate the corresponding frequency deviation according to the temperature characteristic curves and the current temperature of the crystal, and the efficiency of net injection of the terminal 1400 is facilitated to be improved.

It should be noted that, the specific implementation of each operation performed by the terminal 1400 may refer to the corresponding description of the above illustrated method embodiment, which is not repeated herein.

2) Other possible implementations

In some possible embodiments, in determining the temperature offset, processor 1410 in terminal 1400 is configured to execute computer programs or instructions 1421 stored in memory 1420 to implement the steps of:

in the process of registering the terminal 1400 in the network, a first frequency offset corresponding to a first AFC value is obtained, where the first AFC value represents an AFC value required for the signal energy of the downlink reference signal demodulated by the terminal 1400 to reach a peak value;

determining a first temperature value of the crystal according to the first frequency offset and the temperature characteristic curve, wherein the first temperature value characterizes the temperature of the crystal in the process of registering the terminal 1400 with the network;

In some possible embodiments, in determining the temperature hysteresis, the processor 1410 in the terminal 1400 is configured to execute the computer program or instructions 1421 stored in the memory 1420 to implement the steps of:

When terminal 1400 is placed in a temperature regulation box, the temperature of the temperature regulation box is regulated to obtain a target temperature characteristic curve of the crystal;

In some possible embodiments, in determining a first thermometry function of the crystal based on the PCB layout relationship between the thermal element and the crystal, the processor 1410 in the terminal 1400 is configured to execute the computer program or instructions 1421 stored in the memory 1420 to implement the steps of:

A＝(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t))，

B＝(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t))，

C＝(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t))，

D＝-(A*X1+B*Y1+C*N1(t))；

5. Other exemplary description

The present application also provides a computer storage medium storing a computer program for electronic data exchange, the computer program causing a computer to execute some or all of the steps of any one of the methods described in the method embodiments above.

Embodiments of the present application also provide a computer program product comprising a computer program operable to cause a computer to perform part or all of the steps of any one of the methods described in the method embodiments above. A computer program product is understood to be a software product whose solution is realized mainly by means of a computer program.

It should be noted that, for simplicity of description, the foregoing method embodiments are all expressed as a series of action combinations, but it should be understood by those skilled in the art that the present application is not limited by the order of actions described, as some steps may be performed in other order or simultaneously in accordance with the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are all preferred embodiments, and that the acts and modules referred to are not necessarily required in the present application.

In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.

In the several embodiments provided in this application, it should be understood that the disclosed apparatus may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, such as the above-described division of units, merely a division of logic functions, and there may be additional manners of dividing in actual implementation, such as multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, or may be in electrical or other forms.

The units described above as separate components may or may not be physically separate, and components shown as units may or may not be physical units, may be located in one place, or may be distributed over a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

In addition, each functional unit in each embodiment of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.

The integrated units described above, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable memory. Based on such understanding, the technical solution of the present application may be embodied in essence or a part contributing to the prior art or all or part of the technical solution in the form of a software product stored in a memory, including several instructions for causing a computer device (which may be a personal computer, a server or a network device, etc.) to perform all or part of the steps of the above-mentioned method of the various embodiments of the present application. And the aforementioned memory includes: a U-disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a removable hard disk, a magnetic disk, or an optical disk, or other various media capable of storing program codes.

Those of ordinary skill in the art will appreciate that all or a portion of the steps in the various methods of the above embodiments may be implemented by a program that instructs associated hardware, and the program may be stored in a computer readable memory, which may include: flash disk, read-Only Memory (ROM), random access Memory (Random Access Memory, RAM), magnetic disk or optical disk.

The foregoing has outlined rather broadly the more detailed description of embodiments of the present application, wherein specific examples are provided herein to illustrate the principles and embodiments of the present application, the above examples being provided solely to assist in the understanding of the methods of the present application and the core ideas thereof; meanwhile, as those skilled in the art will vary in the specific embodiments and application scope according to the ideas of the present application, the contents of the present specification should not be construed as limiting the present application in summary.

Claims

1. A temperature determination method of a crystal, characterized by being applied to a terminal, the terminal including a temperature detection circuit and a crystal, the crystal being free of a built-in thermosensitive element, the temperature detection circuit including a thermosensitive element, the temperature detection circuit being configured to determine a temperature of the thermosensitive element;

The method comprises the following steps:

2. The method of claim 1, wherein the determining the temperature offset comprises:

Acquiring a first frequency offset corresponding to a first AFC value in the process of registering the terminal in a network, wherein the first AFC value represents an AFC value required by the signal energy of a downlink reference signal demodulated by the terminal to reach a peak value;

determining a first temperature value of the crystal according to the first frequency deviation and the temperature characteristic curve, wherein the first temperature value represents the temperature of the crystal in the process of registering the terminal in a network;

and taking the difference value between the first temperature value and the second temperature value as the temperature offset.

3. The method of claim 1, wherein the determining the temperature hysteresis comprises:

placing the terminal in a temperature regulating box, and regulating the temperature of the temperature regulating box to obtain a target temperature characteristic curve of the crystal;

and taking the time difference corresponding to the temperature difference as the temperature hysteresis quantity.

4. The method of claim 1, wherein the PCB layout relationship between the thermal element and the crystal comprises:

the crystals are located between three or more of the heat sensitive elements on the PCB.

5. The method of claim 4, wherein determining a first temperature measurement function of the crystal based on a PCB layout relationship between the thermal element and the crystal comprises:

wherein F (t) is the temperature of the crystal, N (t) is the temperature of the thermosensitive element, and t is time.

6. The method of claim 4, wherein determining a first temperature measurement function of the crystal based on a PCB layout relationship between the thermal element and the crystal comprises:

if the crystal is located between two heat-sensitive elements on a PCB, the first temperature measurement function is F (t) =n1 (t) + [ N2 (t) -N1 (t) ], L1/(l1+l2);

wherein F (t) is the temperature of the crystal, N1 (t) is the temperature of a first thermosensitive element of the two thermosensitive elements, N2 (t) is the temperature of a second thermosensitive element of the two thermosensitive elements, L1 is the distance between the crystal and the first thermosensitive element on the PCB, L2 is the distance between the crystal and the second thermosensitive element on the PCB, and t is time.

7. The method of claim 4, wherein determining a first temperature measurement function of the crystal based on a PCB layout relationship between the thermal element and the crystal comprises:

if the crystal is located between three of the thermal elements on the PCB, the first temperature measurement function is F (t, x, y) = - (D/C) - (B/C) × (a/C) × (x),

A＝(Y2-Y1)*(N3(t)-N1(t))-(Y3-Y1)*(N2(t)-N1(t))，

B＝(X3-X1)*(N2(t)-N1(t))-(X2-X1)*(N3(t)-N1(t))，

C＝(X2-X1)*(N3(t)-N1(t))-(X3-X1)*(N2(t)-N1(t))，

D＝-(A*X1+B*Y1+C*N1(t))；

wherein F (t) is the temperature of the crystal, t is time, X1 is the abscissa of a third thermosensitive element among the three thermosensitive elements, X2 is the abscissa of a fourth thermosensitive element among the three thermosensitive elements, X3 is the abscissa of a fifth thermosensitive element among the three thermosensitive elements, Y1 is the ordinate of the third thermosensitive element, Y2 is the ordinate of the fourth thermosensitive element, and Y3 is the ordinate of the fifth thermosensitive element.

8. A temperature determining device of a crystal, characterized by being applied to a terminal, the terminal including a temperature detecting circuit and a crystal, the crystal being free of a built-in thermosensitive element, the temperature detecting circuit including a thermosensitive element, the temperature detecting circuit being configured to determine a temperature of the thermosensitive element;

the device comprises:

9. A terminal comprising a processor, a memory and a computer program or instructions stored on the memory, characterized in that the processor executes the computer program or instructions to carry out the steps of the method according to any one of claims 1-7.

10. A computer readable storage medium, characterized in that it has stored thereon a computer program or instructions which, when executed by a processor, implement the steps of the method of any of claims 1-7.