CN1162367A - Three-colour sensor - Google Patents
Three-colour sensor Download PDFInfo
- Publication number
- CN1162367A CN1162367A CN 95196002 CN95196002A CN1162367A CN 1162367 A CN1162367 A CN 1162367A CN 95196002 CN95196002 CN 95196002 CN 95196002 A CN95196002 A CN 95196002A CN 1162367 A CN1162367 A CN 1162367A
- Authority
- CN
- China
- Prior art keywords
- layer
- product
- abnormal property
- abnormal
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
A light-sensitive electronic element based on amorphous silicon and its alloy comprises two series-opposing connected p-i-n or n-i-p or schottky contact structure. The active layer is arranged in a normal mode and along the optical incident direction. In the first structural zone along optical incident direction, a first voltage (V1) is generated by sensitizing the charge carrier generated by blue light; and in the second structural zone along optical incident direction, the charge carrier generated by red or green light is sensitized to generate the second voltage (V2) and the third voltage (V3). At least one of the both intrinsic conduction layers is constituted by two abnormal layers. In order to obtain excellent spectral selectivity, the product (product of Mu and Tau) of the charge carrier mobility and the lifetime in the first abnormal layer (I) is higher, and the product (product of Mu and Tau) of the charge carrier mobility and the lifetime in the second abnormal layer (II) is lower, then the abnormal layers (I, II) exhibit different charge carrier sensitive lengths in the presence of electric field. Therefore, at the optical incident direction, the first abnormal layer (I) absorbs more green light, and the second abnormal layer (II) absorbs more red light.
Description
The present invention relates to a kind of element based on amorphous silicon and alloy thereof, it comprises p-i-n or n-i-p or the Schottky junction structure that two mutual differential concatenations are settled, and wherein the active layer under each situation is arranged to the normal light incident direction.Thereby along the light incident direction, the charge carrier that blue light produces is that first voltage (V1) is collected in the zone of first structure; And in second structural region along in the incident light district territory, the charge carrier that is produced by ruddiness or green glow is that second voltage (V2) or tertiary voltage (V3) are collected, thus in two intrinsic conduction layers at least one is made of two abnormal property layers (partiallayers).
From QZHU, H.Stiebig, P.Rieve, J.Giehl, M.Sommer, the paper of M.B hm " novel thin film color image sensor " (the European modern automation transducer and the control second session, Frankfurt/Main, in June, 1994 20-24), people have known this class component.
The silicon metal element that compares is that absorption to visible light increases significantly based on the advantage of the light-sensitive electronic element of amorphous silicon (a-Si:H).This light-sensitive electronic element basically by two each other the PIN diode that connects of differential concatenation forms, thereby formation alternating N IPIN or PINIP; Perhaps by two each other the metal-semiconductor junction (Schottky contacts) that connects of differential concatenation form.
This element is produced by means of (being generally 250 ℃) at low temperatures with PECVD (plasma-reinforced chemical vapour deposition) technology and separating a plurality of a-Si:H layers on technology.The deposit that results from the dielectric substrate (being generally glass) for example at first is to connect a translucent conductive oxide layer (TCO), and this layer provides contact for the external voltage that is added on element thereafter.By means of applying alternating field, by the SiH that is broken down into silicon atom group and hydrogen
4(silane) produces plasma in the PECVD reactor.In this operation, silicon condenses upon on the substrate with the form of hydrogeneous amorphous film.At this moment, add phosphine and just can obtain n type doped layer; Add diborane and just can obtain p type doped layer.In addition, well-known, with methane (CH
4) join in the silane, can increase the band gap of amorphous silicon, add germane (GeH
4) then can reduce band gap.
Then, visible light penetrates the sandwich type element with desired sequence that makes in this way with the incident direction of light perpendicular to the mode radiation of aspect.Because the absorption coefficient of sensor material depends on the band gap that enters light wavelength and sensing material, just causes the penetration depth difference of light in semi-conducting material.This just causes the blue light penetration depth of (wavelength is about 450nm) (absorption length) significantly less than the penetration depth of green glow or ruddiness.By means of the size separately and the polarity of the external voltage of selecting to be added on element, promptly select the size and the polarity of internal electric field, can obtain the spectral sensitivity of element.For example, can obtain the sensitivity of rgb light in the sandwich construction (red, green, blue) by means of element being applied various voltages.According to this principle, the photoproduction charge carrier is along the collecting region of leement duration thereby also have its spectral sensitivity to be offset with regard to depending on applied voltage.
In order to optimize the NIPIN structure of three-colour sensor, from above as can be known, intermediate layer two sides in that the p type mixes additionally provide the intrinsic conduction defect layer, have increased (for example increasing to 1.9eV from 1.74eV) in the band gap of its caliper zones than remaining intrinsic conduction layer.This causes improving along the red/green separation in the anterior NIP structure of light incident direction, or cause along the light incident direction in the back red/green the separation in the PIN structure improve (so-called band gap engineering).
Learn a kind of light-sensitive electronic element from United States Patent (USP) 5311047 based on band NIPIN structure amorphous silicon.
Appl.Phys.Lett., 52 (4), 1988, P275-277 has reported a kind of heterojunction element (optotransistor) of NIPIN type, it comprises two extra intrinsic conduction layers that insert.Hence one can see that, and blue light is preferably in first knot and is absorbed, and green glow or ruddiness are preferably in second knot and are absorbed.This second intrinsic conduction layer is used for improving blue light absorption.
The objective of the invention is to describe a kind of electronic component and the manufacture method thereof of type described in the foreword, guarantee under the creating conditions of economy, to make colored responsive element to RGB, this element has very high spectral separation characteristic to the RGB colour, can ignore the infrared/ultraviolet contribution of output signal.
According to the present invention, collect two abnormal property layers of length and reach this purpose by means of when electric field exists, having different charge carriers, make in the abnormal property layer of the front portion of light incident direction charge carrier mobility and the product in life-span bigger, and less along the charge carrier mobility and the product in life-span in the abnormal property layer of the rear portion of light incident direction, or make that at least one is made up of by doping separately two abnormal property layers in two intrinsic conduction layers, specifically by Si
xGe
1-xForm, its mobility difference differs from one another two μ τ products in the abnormal property layer, differs from 10 times at least, thereby the bigger abnormal property layer of μ τ product is in the front portion along the light incident direction.
Feature of the present invention is: because at least one in two intrinsic conduction layers of element splits into two abnormal property layers, indigo plant/green separation or green/red separation are improved.With known method (for example by means of absorbing or complex act) or opposite by means of the mode of the extra defect layer of combination by local " band gap engineering " influence that increases band gap, the method that changes μ τ product according to the present invention has tangible advantage, makes to improve spectral separation and required linear behavior significantly.
Consequently, no matter under the situation of high light intensity or low light intensity, separate primary color definitely.The element that the method according to this invention obtains has linear relationship between the photovoltage of each spectrum peak and photon flux.In the photon flux scope of several magnitude, be not always the case.Surpass the linear relation of interdependence that just there is not spectrum peak in this limit.Spectrum peak has linear relationship and linear independence on the other hand on the one hand, and this can actually use this element discern colored reason under various illumination conditions just.
By means of along zone that the charge carrier free mobility is low of combination in the rear structure of light incident direction, charge carrier only just can be extracted when high voltage is higher electric field.Result from anterior hole drift to the intermediate layer by short-wavelength light.Owing to do not produce composite object at the rear portion, electronics arrives the potential barrier layer of rear structure.Longwave optical (redness) mainly results from this zone, so that charge carrier is because μ τ product is lower and compound.Have only when electric field strength is higher, the hole just might float to the intermediate layer.Red/green separation just appears in the result in rear structure.
(Si:H/a-Si for example when the different alloy of free mobility makes up in making suitable material and being with
xGe
1-x: H), in this abnormal property layer, under lower voltage, because μ τ product is lower, charge carrier is collected relatively poorly.On the contrary, under the high voltage situation, these charge carriers can be collected better.
In the abnormal property layer with big μ τ product, green photon is collected best, and at the Background Region along the light incident direction, red charge carrier is collected best.Owing to depend on wavelength, Si:H/a-Si (C): H and a-Si
xGe
1-x: the refractive index difference of H, for the anterior abnormal property layer of in succession intrinsic conduction layer, can determine a certain thickness zone, wherein green photon is absorbed more than red photon.The charge carrier that is produced can be drawn out of under lower negative voltage and definite maximum spectral sensitivity.With higher negative voltage, determine maximum spectral sensitivity by the charge carrier in the abnormal property layer of the rear portion that results from this intrinsic conduction layer.
Utilize the Ge content in this zone, also might utilize gradual structure (gradation), just can be by Si
xGe
1-xThe thickness of material layer is set the maximum spectral sensitivity of long wavelength light.
Utilization is according to element of the present invention, and by means of applying three different voltages, the result can obtain being arranged in three space charge regions at element different depth place, thereby produces fabulous spectral selection.Concrete advantage comprises the linearity that extends 5 above light intensity of the order of magnitude.In addition, element according to the present invention have low dark current and high dynamic range (to 1000lux,＞120dB).Also having an advantage is can be with the predetermined spectral sensitivity of the specific mode of user.Particularly importantly might the selective light spectral component and need not use additional filter.
In relevant claim, pointed out most preferred embodiment.
NIPIN or PINIP structure can think that the best of light-sensitive element becomes example, according to the present invention, revises them with the abnormal property layer with different μ τ products.Technologically, the variation of μ τ is best by means of with germanium and amorphous silicon (a-Si
xGe
1-x: H) method of formation alloy reaches.
In order to improve indigo plant/red separation and in order to improve quantum efficiency, can be along the intrinsic conduction layer of the front portion structure of light incident direction by carburization zone (a-Si (C): H) form, so that except that μ τ optimizes, band gap also takes place adapt to.
The element that concrete most preferred embodiment of the present invention provided is the parts of color sensor, and wherein the sandwich of element is positioned on the surface of integrated circuit.The combination of crystallization element (for example ASIC) and the sandwich type element of making according to the low temperature pecvd process causes a kind of simple combination that can produce economically, and has obtained high-resolution image and generate color sensor.At this, be the micro-structural of ASIC according to integrated circuit, each surface element of light-sensitive element plays single pixel element.Colored selectivity adds to can setting by predefined voltage of pixel region by means of circuit.Film (TFA) sensor-based system on Here it is the so-called ASIC, advantage that it combines the traditional ASIC that is made by silicon metal and advantage based on the optical pickocff of amorphous silicon.
Explain the present invention in more detail with accompanying drawing below, wherein:
Fig. 1 schematic diagram has illustrated the layer structure according to the light-sensitive electronic element of prior art.
Fig. 2 schematic diagram has illustrated the mode of operation according to the element of Fig. 1, wherein
Fig. 2 a shows the arrangement space of each layer of sandwich type element.
Fig. 2 b shows the electric-field intensity distribution of U＞0 o'clock.
Fig. 2 c shows the electric-field intensity distribution of U＜0 o'clock.
Fig. 3 schematic diagram has illustrated the layer structure according to light-sensitive electronic element of the present invention.
Fig. 4 shows the mode of operation according to the element of Fig. 3, wherein:
Fig. 4 a shows the arrangement space of each layer of sandwich type element.
Fig. 4 b shows the electric-field intensity distribution of U＞0 o'clock.
Fig. 4 c shows the electric-field intensity distribution of U＜0 o'clock and the distribution of μ τ product.
Fig. 5 schematic diagram has illustrated the layer structure according to the combination of a light-sensitive electronic element of the present invention and an integrated circuit.
Fig. 1 shows the section of NIPIN layer system, and NIPIN layer wherein is deposited on the carrier (glass).Glass substrate is coated with the tco layer that contains light transmitting conductive oxide, presses each amorphous silicon layer of sequential deposit shown in Figure 1 at its top.
(the about 250 ℃) deposit under quite low temperature of the pecvd process that the depositing technics utilization is known, amorphous silicon wherein becomes required thickness.
Form back of the body contact with the aluminium electrode, external voltage U adds thereon, make electric current I flow into element, thereby tco layer forms reference potential.This device plays two PIN diode anti-series by this way and connects combination.
As shown in Figure 1, light goes into to inject NIPIN layer structure from glass substrate perpendicular to the surface of each layer.
Fig. 2 a shows the schematic diagram of semiconductor structure.In the n type doped region that forms NIPIN element potential barrier layer, there is heavy doping.In these zones,,, collects charge carrier so not taking place owing to the high recombination probability that exists corresponding to high defect concentration between electronics and the hole.In this position, because doping content (being made as the constant shown in Fig. 2 b and the 2c difference) increases so the linearity of electric field strength takes place.(establish and do not have space charge) in the intrinsic conduction district, there is distribution almost constant on the space in electric field strength, thereby movable load, defect and impurity can be ignored the contribution of space charge.Utilize electric field, the photoproduction charge carrier can be collected as main photoelectric current.The charge carrier of thermal excitation has contribution to dark current.Because the NIPIN structure can be thought to be made up of the PIN diode that two differential concatenations connect, so most of pressure drop occurs in the zone of diode that the polarity edge stops direction.On the contrary, polarity can be ignored along the electric field in the diode of conduction orientation.From Fig. 2 b and 2c as seen, if the thermal excitation charge carrier can be ignored, the electric field strength that exists in the p type layer region in the middle of then is the function of applied voltage U, thereby can pass through zero point in the field intensity in p type layer central authorities somewhere.
Electric field strength by Fig. 2 b (U＞0) or by Fig. 2 c (U＜0) with the change in voltage that is added on element outward.If according to Fig. 2 b to element shown in Figure 1 apply one for example+positive voltage of 2V, then the polarity of anterior diode is for stopping direction, so that it innerly forms a highfield, and charge carrier is separated.Because this zone is positioned at along the front portion of light incident direction, be absorbed herein so have the spectral components that is the blue light of the light of low absorption length.
On the contrary,, then in PIN diode zone, rear portion, form the space charge region, so that have than the green of penetration depth or the light in the red color spectrum range are absorbed therein greatly if negative voltage is added on element.
Thus, Fig. 3 shows an embodiment according to light-sensitive electronic element of the present invention.According to Fig. 3, the intrinsic conduction rearward layer along the light incident direction that adds in the element shown in Figure 1 is divided into two abnormal property layer I, II.Owing to existing one to cut apart among the abnormal property layer I than the bigger μ τ product of abnormal property layer II.Thisly be connected shown in Fig. 4 c thick line in the μ τ characteristic obviously, can see the gradual variation among I, the II.
Because other basic function of element is identical, this just causes following mode of operation:
Corresponding to Fig. 4 b, the charge carrier that blue light produces externally positive voltage puts under the situation of element and is preferentially regathered.
On the contrary, Fig. 4 C shows the situation that negative voltage U is added on element.Earlier the examination negative voltage is less, for example-and 0.5v voltage is added on the situation of element.In the Background Region of the second intrinsic conduction layer (abnormal property layer II), obtain lower μ τ product by means of the combination of materials that will hang down free mobility thus, collect variation by the charge carrier that the light with high-penetration degree of depth (being equivalent to ruddiness) produces.Therefore, under this voltage condition, preferentially collected by the charge carrier that green photon produces.Because abnormal property layer I is not germanic, so band gap wherein is so big, consequently red photon can not be absorbed or can only be absorbed by halves.
On the contrary, if improve negative voltage, then red charge carrier can preferentially be collected.Make its band gap this extra reason that diminishes owing to abnormal property layer II contains germanium, make red photon wherein be absorbed well especially.
This μ τ product in the intrinsic conduction layer region of rear portion slowly changes, and causes the remarkable improvement of red/green separation, and with anterior intrinsic conduction floor district in the blue light absorption that takes place combine, the three-colour sensor with catch light spectral selectivity might be provided.
Because above-mentioned basic function in element according to the present invention, also provides following improvement preferably:
Be positioned at along the intrinsic conduction layer of the NIP diode of light incident direction front portion and can form by carburization zone, so that the indigo plant/red separation that has been improved.In order to reduce dark current, can in this intrinsic conduction layer, provide a zone that band gap is narrower.
In order to improve maximum quantum efficiency, can make along the n type layer carbonization of the front portion structure of light incident direction or make microcrystalline coating, but and middle also carbonization of p type layer.
In addition, by means of the transition region between intrinsic conduction layer and the middle p type layer is carried out light dope, the blue light absorption sensitivity of first structure can be moved to short wavelength's direction.
In order to optimize spectral selection, at a-Si
xGe
1-x: after the H layer or before, can arrange the a-Si of a classification
xGe
1-x: H layer or other plain layers.
Can obtain color image sensor shown in Figure 5 by the described element of Fig. 3, sandwich construction wherein is positioned at the top as the integrated circuit of the ASIC form of substrate.Production technology is by means of with insulating barrier and layer metal interconnection and carry out.In addition, the sequence in the deposition process is another approach outside Fig. 1 or the described method of 3 difference.
According to Fig. 5, light enters above-mentioned structure.Depend on the selection of crystalline A SIC structure to the light unit, each pixel obtains different spectrum behaviors according to applied voltage.Pixel ground its irradiates light is carried out analysis about spectral components one by one by this method, and can further be handled by electricity by the light signal of this method conversion.
Claims (15)
1. light-sensitive electronic element based on amorphous silicon and alloy thereof, it comprises two p-i-n or the n-i-p or the Schottky contacts structures of differential concatenation each other, wherein the active layer under each situation is arranged along the light incident direction in due form, thereby along in first structural region of light incident direction, the charge carrier that blue light produced is that first voltage is collected; And along in second structural area of light incident direction, charge carrier green or that ruddiness produced be second or tertiary voltage collect, thereby at least one is made of two abnormal property layers in two intrinsic conduction layers,
The feature of this light-sensitive electronic element is, is being arranged in along the abnormal property layer (I) of the front portion of light incident direction, and the product in charge carrier mobility and life-span (μ τ product) is higher; And at the abnormal property layer (II) at the rear portion that is arranged in the light incident direction, μ τ product is to when young 10 times, by this way, these two abnormal property layers (I, II) have different charge carrier and collect length existing under the situation of electric field, so that abnormal property layer (I) in the front portion that is arranged in the light incident direction, green glow is enhanced absorption, and at the abnormal property layer (II) at the rear portion that is arranged in the light incident direction, ruddiness is enhanced absorption.
2. according to the element of claim 1, it is characterized in that the ratio of two μ τ products in the abnormal property layer is 1: 10-1: 100.
3. each element is characterized in that the value of the μ τ product in the first abnormal property layer is 10 in requiring according to aforesaid right
-7Cm
2V
-1-10
-6Cm
2V
-1, and be 10 in the second abnormal property layer
-8Cm
2V
-1-10
-7Cm
2V
-1
4. each element is characterized in that by means of introducing foreign atom, particularly a-Si in requiring according to aforesaid right
xGe
1-x: H and influence with respect to the charge carrier mobility of intrinsic conduction amorphous silicon and set μ τ product.
5. each element in requiring according to aforesaid right is characterized in that being added on the order of the layer of glass substrate:
(a) the a-Si:H layer of a n type conduction
(b) the a-Si:H layer of one first intrinsic conduction
(c) the a-Si:H layer of a p type conduction
(d) the a-Si:H layer of second intrinsic conduction of forming by the higher first abnormal property layer of μ τ product and μ τ product second abnormal property layer low than the first abnormal property layer
(e) the a-Si:H layer of a n type conduction.
6. each element in requiring according to aforesaid right is characterized in that being added on the order of the layer of glass substrate:
(a) the a-Si:H layer of a p type conduction
(b) the a-Si:H layer of one first intrinsic conduction
(c) the a-Si:H layer of a n type conduction
(d) the a-Si:H layer of second intrinsic conduction of forming by the higher first abnormal property layer of μ τ product and μ τ product second abnormal property layer low than the first abnormal property layer
(e) the a-Si:H layer of a p type conduction.
7. each element is characterized in that in requiring according to aforesaid right, between glass substrate and n-i-p-i-n or p-i-n-i-p sequence, also provides a transparent conductive oxide layer (TCO).
8. in requiring according to aforesaid right each element is characterized in that, at least one intrinsic conduction layer region, and the a-Si (C) that also provides band gap to increase: the intrinsic conduction layer of H.
9. in requiring according to aforesaid right each element is characterized in that, the intrinsic conduction layer that provides a band gap to increase to the a-Si of 1.72-1.95eV (C): H replaces a-Si:H intrinsic conduction layer.
10. in requiring according to aforesaid right each element is characterized in that, provides a crystallite or carbonization amorphous silicon to come the a-Si:H layer of substitute doping.
11. the color sensor of each element is characterized in that the sandwich of forming this element is deposited on the surface of integrated circuit during an employing required according to aforesaid right.
12., it is characterized in that this integrated circuit is an ASIC according to the color sensor of claim 11.
13., it is characterized in that quartz, metal, silicon chip, GaAs or plastics are used as carrier substrates according to the color sensor of claim 11 or 12.
14. technology of utilizing the pecvd process manufacturing based on the light-sensitive electronic element of amorphous silicon, wherein, a sequence that comprises the barrier layer of the intermediate layer of one first doped layer, first an intrinsic conduction layer, a doping, second an intrinsic conduction layer and a doping is placed on the glass substrate, thereby form two p-i-n or the n-i-p knots of differential concatenation arrangement each other, it is characterized in that at least one is by (being specially Si based on introducing foreign atom in two intrinsic conduction layers
xGe
1-x) two abnormal property layers constitute, the mobility difference in two abnormal property layers, its μ τ product differs 10 times each other at least, thereby the higher abnormal property layer of μ τ product is in along the front portion of light incident.
15., it is characterized in that the ratio of two μ τ products in the abnormal property layer is 1: 20-1: 100 according to the technology of claim 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95196002 CN1162367A (en) | 1994-10-30 | 1995-08-31 | Three-colour sensor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP4441444.7 | 1994-10-30 | ||
| CN 95196002 CN1162367A (en) | 1994-10-30 | 1995-08-31 | Three-colour sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1162367A true CN1162367A (en) | 1997-10-15 |
Family
ID=5083073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95196002 Pending CN1162367A (en) | 1994-10-30 | 1995-08-31 | Three-colour sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1162367A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111074229A (en) * | 2018-10-19 | 2020-04-28 | 清华大学 | Method for regulating and controlling color of hard coating, hard coating and preparation method thereof |
-
1995
- 1995-08-31 CN CN 95196002 patent/CN1162367A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111074229A (en) * | 2018-10-19 | 2020-04-28 | 清华大学 | Method for regulating and controlling color of hard coating, hard coating and preparation method thereof |
| CN111074229B (en) * | 2018-10-19 | 2021-05-14 | 清华大学 | Method for regulating and controlling color of hard coating, hard coating and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1299714C (en) | Multiple cell, two terminal photovoltaic device employing adhered cells | |
| US6310382B1 (en) | Multicolor sensor | |
| US20060237809A1 (en) | Methods of making optoelectronic devices | |
| JPS6249672A (en) | Amorphous photovoltaic element | |
| JPH0370183A (en) | Photovoltaic element | |
| US5923049A (en) | Trichromatic sensor | |
| US4405915A (en) | Photoelectric transducing element | |
| JP3236624B2 (en) | Photosensitive electronic device, color sensor using the device, and method of manufacturing the device | |
| JPH0652802B2 (en) | Light receiving device | |
| EP0428050B1 (en) | Photosensor having an amorphous silicon photoabsorption layer | |
| CN1162367A (en) | Three-colour sensor | |
| JP2577347B2 (en) | Image sensor | |
| JPS5879756A (en) | Amorphous si image sensor | |
| JPH0799777B2 (en) | Amorphous semiconductor device | |
| CA2005255C (en) | Contact type photoelectric transducer | |
| KR970004494B1 (en) | A method for manufacture for image sensor | |
| GB2166289A (en) | Colour sensitive photodetector | |
| JPH08153888A (en) | Photoelectric converter and optical sensor employing it | |
| KR930011356B1 (en) | Amorphous silicon solar battery and making method thereof | |
| JPS59172783A (en) | Photosensor | |
| JPH0380574A (en) | Photodetector | |
| JPH0563171A (en) | Manufacture of optoelectric transducer | |
| GB2080025A (en) | Semiconductor Photosensor Device | |
| Watty et al. | Amorphous photodiode with an intermediate contact for improved color separation | |
| JPS63181482A (en) | Photosensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned | ||
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |