CN116234336A - Perovskite solar cell and preparation method thereof - Google Patents
Perovskite solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN116234336A CN116234336A CN202211672336.3A CN202211672336A CN116234336A CN 116234336 A CN116234336 A CN 116234336A CN 202211672336 A CN202211672336 A CN 202211672336A CN 116234336 A CN116234336 A CN 116234336A
- Authority
- CN
- China
- Prior art keywords
- perovskite
- solar cell
- layer
- transport layer
- perovskite solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention provides a perovskite solar cell and a preparation method thereof, and relates to the technical field of optoelectronic materials. The trimethoxysilane coupling agent in the self-assembled material modified layer material of the invention can self-assemble and crosslink on the surface of the oxide through a silanization process, and the O-Si bonds which are anchored are generated by the coupling agent, thereby greatly reducing SnO 2 Electron transportThe number of hydroxyl (-OH) groups on the surface of the transport layer (ETL) can be reduced, and in addition, the organic functional groups can be contacted and reacted with the perovskite light absorption layer, so that the defects of the perovskite layer can be effectively passivated, and the lattice distortion can be reduced.
Description
Technical Field
The invention relates to the technical field of optoelectronic materials, in particular to a perovskite solar cell and a preparation method thereof.
Background
In recent years, a hybrid perovskite material (CH 3 NH 3 PbX 3 ) The prepared solar cell has the advantages of high light absorption coefficient, high charge mobility, long carrier diffusion length, adjustable optical band gap, low cost, relative easiness in preparation and the like, so that the prepared solar cell is widely focused by scientists and is expected to become a next-generation commercial solar cell. Suitable electron transport layers are a necessary prerequisite for the fabrication of an ideal solar cell, since the role of the electron transport layer is to generate and conduct electrons in the cell, effectively separating electrons from holes, and also determining the energy conversion efficiency of the cell. The performance and stability of perovskite solar cells are directly affected by the quality of the electron transport material.
In recent years, snO 2 Are widely used as electron transport layers in perovskite solar cells due to their suitable energy levels, high electron extraction yield, good optical properties and low annealing temperatures. However, snO 2 Intrinsic defects (such as Sn dangling bonds) can deteriorate electrical properties and lead to SnO 2 The compactness of the layer is poor. Furthermore, poor quality SnO 2 The film may even affect the crystallinity of the upper perovskite film and its interfacial properties, resulting in severe non-radiative carrier recombination losses and reduced photoelectric conversion efficiency in perovskite solar cells.
Disclosure of Invention
The invention solves the problem that the electron transport layer SnO in the existing system 2 Lower electron mobility, energy level mismatch, thereby reducing perovskite film quality and efficiency and stability of the device.
In order to solve the problems, the invention provides a perovskite solar cell, which comprises a first electrode, an electron transport layer, a self-assembly material modification layer, a perovskite light absorption layer, a hole transport layer and a second electrode which are sequentially stacked, wherein the self-assembly material modification layer is made of silane coupling agent with both ends comprising trimethoxysilane groups and organic functional groups, and the organic functional groups are selected from thienyl, pyridyl or halogeno groups.
Optionally, the self-assembled material modification layer is selected from one of thienyl trimethoxysilane, 2- (2-pyridyl) ethyl trimethoxysilane and 3-chloropropyl trimethoxysilane.
Optionally, the first electrode is selected from ITO or FTO, and the second electrode is selected from at least one of a gold electrode and a silver electrode.
Optionally, the material of the electron transport layer is selected from SnO 2 And/or TiO 2 。
Optionally, the perovskite light absorbing layer is ABX n Y 3-n Crystals, wherein A is an organic cation FA + 、MA + Or Cs + FA is-HC (NH) 2 ) 2 MA is-CH 3 NH 3 The method comprises the steps of carrying out a first treatment on the surface of the B is Pb 2+ X and Y are I - 、Br - 、Cl - N ranges from 0 to 3.
Optionally, the hole transport layer is a Spiro-ome and/or PTAA.
In the perovskite solar cell, the trimethoxysilane coupling agent in the self-assembled material modification layer material can self-assemble and crosslink on the surface of the oxide through a silanization process, and the O-Si bonds which are anchored are generated by the coupling agent, so that SnO is greatly reduced 2 Number of surface hydroxyl (-OH) groups of the Electron Transport Layer (ETL). Secondly, based on the trimethoxysilane coupling agent, charge accumulation at the interface and passivation of interface charge traps can be reduced by improving extraction of photocarriers, photoelectric conversion efficiency of Perovskite Solar Cells (PSCs) is increased, hysteresis in the PSCs is reduced, in addition, organic functional groups can be contacted and reacted with a perovskite light absorption layer, defects of the perovskite layer can be effectively passivated, and lattice distortion is reduced.
In order to solve the above problems, the present invention also provides a method for preparing a perovskite solar cell, comprising:
step S1, preparing a first electrode by using a transparent conductive substrate;
step S2, coating an electron transport layer material above the first electrode;
s3, dissolving the self-assembly material in an organic solvent to obtain a mixed solution, and spin-coating the mixed solution above the electron transport layer to obtain a self-assembly material modification layer;
step S4, spin-coating a perovskite precursor solution on the self-assembly material modification layer to prepare a perovskite light absorption layer;
step S5, spin-coating a hole transport layer material on the perovskite light absorption layer to prepare a hole transport layer;
and S6, preparing a second electrode by thermally depositing metal above the hole transport layer, and obtaining the perovskite solar cell.
Optionally, in step S3, the spin-coating speed is 1000-6000rpm, the spin-coating time is 10-60S, and the annealing is performed at 70-120 ℃ for 5-20min after the spin-coating is completed.
Optionally, in step S4, the perovskite precursor solution is prepared by mixing FAI, pbI 2 、MABr、PbBr 2 Dissolving CsI in a second organic solvent, wherein the FAI and PbI 2 、MABr、PbBr 2 The molar ratio of the components of CsI is 1:1.1:0.2:0.22:0.065.
Optionally, the second organic solvent is selected from at least one of N, N-dimethylformamide and dimethyl sulfoxide.
The preparation method of the perovskite solar cell is simple, and has the same advantages as the perovskite solar cell in comparison with the prior art, and is not repeated herein.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite solar cell according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a connection structure of a self-assembled material interface modification layer in a perovskite solar cell according to an embodiment of the invention;
FIG. 3 is a flow chart of a method of fabricating a perovskite solar cell according to an embodiment of the invention;
FIG. 4 is a graph of J-V (current density vs. photovoltage) curves of perovskite solar cells prepared before and after interface modification of self-assembled materials according to an embodiment of the invention;
FIG. 5 is a scanning electron microscope image of the self-assembled material before and after interface modification according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of energy levels of perovskite solar cells before and after interface modification of self-assembled materials according to embodiments of the present invention;
FIG. 7 shows SnO according to an embodiment of the present invention 2 Fluorescence spectrum (PL) of SAM (self assembled material)/perovskie (Perovskite);
FIG. 8 shows SnO according to an embodiment of the present invention 2 Time resolved fluorescence spectroscopy (TRPL) of SAM (self assembled material)/Perovskite (Perovskite).
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
As shown in fig. 1 and fig. 2, in fig. 2, R is an organic functional group, perovskie represents a Perovskite light absorption layer, ETL represents an electron transport layer, and in an embodiment of the present invention, there is provided a Perovskite solar cell, which includes a first electrode, an electron transport layer, a self-assembled material modification layer, a Perovskite light absorption layer, a hole transport layer, and a second electrode that are sequentially stacked, wherein the material of the self-assembled material modification layer is a silane coupling agent having both ends including a trimethoxysilane group and an organic functional group, and the organic functional group is selected from a thienyl group, a pyridyl group, or a halogen group.
In some preferred embodiments, the self-assembled material modification layer is selected from one of thienyl trimethoxysilane, 2- (2-pyridyl) ethyl trimethoxysilane, and 3-chloropropyl trimethoxysilane.
In this example, the surface of the Electron Transport Layer (ETL) is covered with adsorbed hydroxyl (-OH) groups that are readily captured by the n-i-p planar structured perovskite layer and reduce its performance, and the trialkoxysilane SAMs can self-assemble and crosslink on such oxide surfaces by a silylation process, which creates anchored O-Si bonds that greatly reduce the number of surface-OH groups. Second, trialkoxysilane-based SAMs can increase the photoelectric conversion efficiency of Perovskite Solar Cells (PSCs) and reduce hysteresis in PSCs by improving extraction of photocarriers, reducing charge accumulation at the interface and passivation of interface charge traps.
Regarding the organic functional group, the lone pair electrons on S on the thiophene group and N on the pyridine group can effectively passivate the defects of the perovskite layer; thiophene cations and pyridine cations can effectively passivate the inversion defects or cation vacancies of Pb-I. While the other end of the halogen group such as chlorine group (-Cl), bromine group (-Br) and iodine group (-I) can be used as the silane coupling agent to carry out covalent bond combination with the perovskite interface and aim at Pb with insufficient coordination exposed in the perovskite 2+ Compensating for its incomplete octahedron, forming strong chemical bond, thus reducing lattice distortion.
In some preferred embodiments, in the step S1, the first electrode is selected from ITO or FTO, and the second electrode is selected from at least one of a gold electrode and a silver electrode. The electrical conductivity is good.
In some preferred embodiments, the electron transport layer material is selected from SnO 2 And/or TiO 2 . The electron transmission performance is good.
The perovskite light absorbing layer is the core of a perovskite solar cell, and in some preferred embodiments is ABX n Y 3-n Crystals, wherein A is an organic cation FA + 、MA + Or Cs + FA is-HC (NH) 2 ) 2 MA is-CH 3 NH 3 The method comprises the steps of carrying out a first treatment on the surface of the B is Pb 2+ X and Y are I - 、Br - 、Cl - N ranges from 0 to 3, thereby improving the photovoltaic performance of the perovskite solar cell.
Optionally, the hole transport layer is a Spiro-ome and/or PTAA.
Wherein, the Spiro-OMeTAD is 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, and the PTAA is poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ].
Therefore, in the perovskite solar cell of the embodiment, the perovskite solar cell is modified by adopting the silane coupling agent as the self-assembly material modification layer, so that the quality of the electron transport layer and the perovskite light absorption layer film is improved. The introduction of the self-assembly material modification layer promotes the extraction and transfer of the interface charges of the electron transport layer/perovskite light absorption layer, and optimizes the energy level arrangement; at the same time, the preferred vertical orientation growth of perovskite crystal grains is promoted, the crystal grain size is improved, and uncoordinated PbI 2 And surface grain boundary defects are reduced, and non-radiative recombination centers are obviously inhibited, so that the photoelectric performance of the perovskite solar cell is greatly improved.
As shown in fig. 3, the embodiment of the invention further provides a method for preparing a perovskite solar cell, which includes:
step S1, preparing a first electrode by using a transparent conductive substrate;
step S2, coating an electron transport layer material above the first electrode;
s3, dissolving the self-assembly material in an organic solvent to obtain a mixed solution, and spin-coating the mixed solution above the electron transport layer to obtain a self-assembly material modification layer;
step S4, spin-coating a perovskite precursor solution on the self-assembly material modification layer to prepare a perovskite light absorption layer;
step S5, spin-coating a hole transport layer material on the perovskite light absorption layer to prepare a hole transport layer;
and S6, preparing a second electrode by thermally depositing metal above the hole transport layer, and obtaining the perovskite solar cell.
In some preferred embodiments, in step S1, the transparent oxide semiconductor is washed with an inorganic solvent and a first organic solvent, dried, and then subjected to ultraviolet ozone treatment, thereby obtaining the first electrode.
Wherein the inorganic solvent is deionized water, and the first organic solvent is at least one selected from acetone, ethanol and isopropanol. Specifically, the first organic solvent is ethanol, and the cleaning effect is better.
In this embodiment, in order to achieve a better cleaning effect, the transparent oxide semiconductor may be cleaned with a detergent before the inorganic solvent and the first organic solvent are cleaned. Specifically, the cleaning mode is ultrasonic cleaning, and the drying mode is drying or blow-drying, for example, oven drying or nitrogen gun blow-drying can be used. In one specific example, the ultraviolet ozone treatment time is 25min-30min.
In some preferred embodiments, in step S2, the electron transport layer material has a thickness of 20nm to 30nm and is annealed for 20 to 40 minutes after coating.
In some preferred embodiments, in step S3, the spin-coating speed is 1000-6000rpm, the spin-coating time is 10-60S, and the annealing is performed at a temperature of 70-120 ℃ for 5-20min after the spin-coating is completed.
Specifically, 2- (2-pyridyl) ethyl trimethoxy silane is dripped into isopropanol to obtain a mixed solution, and the mixed solution is spin-coated above the electron transport layer to prepare the self-assembled material modification layer.
In some preferred embodiments, in step S4, the perovskite precursor solution is prepared by mixing FAI, pbI 2 、MABr、PbBr 2 Dissolving CsI in a second organic solvent, wherein FAI and PbI 2 、MABr、PbBr 2 The molar ratio of the components of CsI is 1:1.1:0.2:0.22:0.065, and the chemical formula is Cs 0.05 FA 0.79 MA 0.16 PbI 2.49 Br 0.51 。
In some preferred embodiments, in step S4, the perovskite light absorbing layer has a thickness of 350nm to 450nm.
In some preferred embodiments, the second organic solvent is selected from at least one of N, N-dimethylformamide and dimethylsulfoxide, and the materials are readily available.
In some preferred embodiments, in step S5, the hole transport layer has a thickness of 20-100nm. In step S6, the thickness of the second electrode is 80-100nm.
The preparation method of the perovskite solar cell is simple, and the preparation method of the perovskite solar cell has the same advantages as the perovskite solar cell compared with the prior art, and is not repeated herein.
Example 1
The embodiment provides a preparation method of a perovskite solar cell, which comprises the following steps:
(1) Preparing a first electrode: the commercial ITO conductive glass is subjected to ultrasonic cleaning for 20min for two times by using a detergent, deionized water, acetone and ethanol (isopropanol), and then is dried by using a nitrogen gun, and is transferred to an ultraviolet ozone light cleaner for treatment for 30min;
(2) Preparing an electron transport layer: preparing an electron transport layer precursor solution: the preparation volume ratio is 2: snO of 1 2 The colloid/deionized water dilution (mass fraction 10 wt%) was then spin coated on the pre-cleaned ITO glass at 6500rpm for 10s, after which the spin coating was thermally annealed at 150 ℃ for 30min. After the glass substrate is cooled to room temperature, the ITO glass substrate is put into ultraviolet ozone again for treatment for 15min;
(3) Preparing a self-assembled material modification layer: 2- (2-pyridyl) ethyl trimethoxy silane is dissolved in isopropanol to prepare a 2mM dilute solution, spin-coating is carried out on the upper layer of ITO conductive glass with an electron transport layer at a speed of 5000rpm for 30 seconds, and then annealing is carried out on a hot table at 100 ℃ for 5 minutes, so that the self-assembled material fully reacts with the electron transport layer;
(4) Preparing a perovskite light absorption layer: FAI (1 mol), pbI 2 (1.1 mol), MABr (0.2 mol), pbBr2 (0.22 mol), csI (0.065 mol) in 800uL of DMF and 200uL of DMSO to give Cs 0.05 FA 0.79 MA 0.16 PbI 2.49 Br 0.51 The mixed solution with the concentration of 1.32mol/L is stirred until the mixed solution is clarified, and a perovskite precursor solution is obtained; processing the prepared titanium ore precursor solution for 10s at a rotating speed of 1000rpm and then processing the solution for 30s at a rotating speed of 5000rpm, thereby continuously spin-coating the solution on the substrate processed in the step (3), and rapidly dripping about 200 mu L of anti-solvent chlorobenzene at the center of the substrate for 5s before the end of the procedure to induce rapid crystallization, so as to obtain a perovskite film; heating the perovskite film on a heating table at 120 ℃ for 15min to promote perovskite crystallization, and preparing a smooth and flat perovskite light absorption layer;
(5) Preparing a hole transport layer: 72.3mg of Spiro-OMeTAD is dissolved in 1mL of chlorobenzene, 17 mu L of Li-TFSI solution (520 mg of Li-TSFI is dissolved in 1mL of acetonitrile) and 29 mu L of 4-tert-butylpyridine are added, and after being uniformly mixed, the mixture is treated for 30 seconds at a rotating speed of 4000rpm, so that a flat and smooth hole transport layer is obtained by spin coating on the upper layer of a perovskite light absorption layer;
(6) Preparing a second electrode: and (3) evaporating and depositing a silver electrode with the thickness of 80nm above the hole transport layer by using a vacuum evaporator to obtain the perovskite solar cell.
Example 2
The difference between this example and example 1 is that the thienyl trimethoxysilane was used as the self-assembled material in the self-assembled material modifying layer, and the other is the same as in example 1.
Example 3
The difference between this example and example 1 is that 3-chloropropyl trimethoxysilane is used as the self-assembly material in the self-assembly material modification layer, and the other is the same as example 1.
Example 4
The embodiment provides a preparation method of a perovskite solar cell, which comprises the following steps:
(1) Preparing a first electrode: ultrasonically cleaning FTO conductive glass twice by using a detergent, deionized water, acetone and ethanol (isopropanol) respectively, cleaning for 20min each time, drying by using an oven, and transferring to an ultraviolet ozone light cleaning machine for treatment for 25min;
(2) Preparing an electron transport layer:
spray pyrolysis and compact TiO deposition on clean FTO glass at 450 ℃ by using 180mM titanium diisopropoxide bis (acetylacetonate) solution in ambient atmosphere 2 (c-TiO 2 ) The method comprises the steps of carrying out a first treatment on the surface of the After cooling to room temperature, mesoporous TiO 2 Ethanol solution (135 mg/ml) was spin-coated onto c-TiO at 4000rpm 2 On the layer, annealing at 105deg.C for 10 min, sintering at 500deg.C for 30min, and cooling to obtain TiO 2 An electron transport layer;
(3) Preparing a self-assembled material modification layer: 2- (2-pyridyl) ethyl trimethoxy silane is dissolved in isopropanol to prepare a 2mM dilute solution, spin-coating is carried out on an FTO conductive glass upper layer with an electron transport layer at a speed of 6000rpm for 40s, and then annealing is carried out on a hot table at 100 ℃ for 5min, so that the self-assembled material fully reacts with the electron transport layer;
(4) Preparing a perovskite light absorption layer: FAI (1 mol), pbI2 (1.1 mol), MABr (0.2 mol), pbBr2 (0.22 mol), csI (0.065 mol) were dissolved in 800uL of DMF and 200uL of DMSO to give Cs 0.05 FA 0.79 MA 0.16 PbI 2.49 Br 0.51 The mixed solution with the concentration of 1.32mol/L is stirred until the mixed solution is clarified, and a perovskite precursor solution is obtained; processing the prepared titanium ore precursor solution for 10s at a rotating speed of 1000rpm and then processing the solution for 30s at a rotating speed of 5000rpm, thereby continuously spin-coating the solution on the substrate processed in the step (3), and rapidly dripping about 300 mu L of anti-solvent chlorobenzene at the center of the substrate for 10s before the end of the procedure to induce rapid crystallization, so as to obtain a perovskite film; heating the perovskite film on a heating table at 120 ℃ for 15min to promote perovskite crystallization, and preparing a smooth and flat perovskite light absorption layer;
(5) Preparing a hole transport layer: dissolving 10mg of PTAA in 1mL of chlorobenzene, adding 15 mu L of Li-TFSI solution (170 mg of Li-TSFI is dissolved in 1mL of acetonitrile) and 7.5 mu L of 4-tert-butylpyridine, uniformly mixing, and treating for 30s at a rotating speed of 2000rpm, thereby spin-coating the mixture on the upper layer of a perovskite light absorption layer to obtain a flat and smooth hole transport layer;
(6) Preparing a second electrode: and (3) evaporating and depositing a gold electrode with the thickness of 80nm above the hole transport layer by using a vacuum evaporator to obtain the perovskite solar cell.
Comparative example 1
The embodiment provides a perovskite solar cell preparation method, which comprises the following steps:
(1) Preparing a first electrode: the commercial ITO conductive glass is subjected to ultrasonic cleaning for 20min for two times by using a detergent, deionized water, acetone and ethanol (isopropanol), and then is dried by using a nitrogen gun, and is transferred to an ultraviolet ozone light cleaner for treatment for 30min;
(2) Preparing an electron transport layer: preparing an electron transport layer precursor solution: the preparation volume ratio is 2: snO of 1 2 Colloid/deionized water dilution (mass fraction 10 wt.)) Spin-coating the pre-cleaned ITO conductive glass at a speed of 6500rpm for 10s, thermally annealing at 150 ℃ for 30min after spin-coating, and putting the ITO conductive glass substrate into ultraviolet ozone again for 15min after the glass substrate is cooled to room temperature;
(3) Preparing a perovskite light absorption layer: FAI (1 mol), pbI2 (1.1 mol), MABr (0.2 mol), pbBr2 (0.22 mol), csI (0.065 mol) were dissolved in 800uL of DMF and 200uL of DMSO to give Cs 0.05 FA 0.79 MA 0.16 PbI 2.49 Br 0.51 The mixed solution with the concentration of 1.32mol/L is stirred until the solution is clarified to obtain perovskite precursor solution; processing the prepared titanium ore precursor solution for 10s at a rotating speed of 1000rpm and then processing the solution for 30s at a rotating speed of 5000rpm, thereby continuously spin-coating the solution on the substrate processed in the step (3), and rapidly dripping about 200 mu L of anti-solvent chlorobenzene at the center of the substrate for 5s before the end of the procedure to induce rapid crystallization, so as to obtain a perovskite film; then placing the perovskite film on a heating table at 120 ℃ for heating for 15min to promote perovskite crystallization, and preparing a smooth and flat perovskite light absorption layer;
(4) Preparing a hole transport layer: 72.3mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene, 17. Mu.L of Li-TFSI solution (520 mg of Li-TSFI was dissolved in 1mL of acetonitrile) and 29. Mu.L of 4-tert-butylpyridine were added, and after mixing uniformly, the mixture was treated at 4000rpm for 30 seconds, thereby spin-coating on a perovskite light-absorbing layer to give a flat and smooth hole-transporting layer;
(5) Preparing a second electrode: an 80nm thick silver electrode was vapor deposited over the hole transport layer using a vacuum vapor deposition apparatus.
Comparative example 2
The embodiment provides a preparation method of a perovskite solar cell, which comprises the following steps:
(1) Preparing a first electrode: ultrasonically cleaning FTO conductive glass twice by using a detergent, deionized water, acetone and ethanol (isopropanol) respectively, cleaning for 20min each time, drying by using an oven, and transferring to an ultraviolet ozone light cleaning machine for treatment for 25min;
(2) Preparing an electron transport layer:
at 450℃by using 180mM titanium diisopropoxide bis (ethylene) under ambient atmosphereAcyl pyruvate) solution spray pyrolysis and compact deposition of TiO on clean FTO glass 2 (c-TiO 2 ) The method comprises the steps of carrying out a first treatment on the surface of the After cooling to room temperature, mesoporous TiO 2 Ethanol solution (135 mg/ml) was spin-coated onto c-TiO at 4000rpm 2 On the layer, annealing at 105deg.C for 10 min, sintering at 500deg.C for 30min, and cooling to obtain TiO 2 An electron transport layer;
(3) Preparing a perovskite light absorption layer: FAI (1 mol), pbI2 (1.1 mol), MABr (0.2 mol), pbBr2 (0.22 mol), csI (0.065 mol) were dissolved in 800uL of DMF and 200uL of DMSO to give Cs 0.05 FA 0.79 MA 0.16 PbI 2.49 Br 0.51 The mixed solution with the concentration of 1.32mol/L is stirred until the mixed solution is clarified, and a perovskite precursor solution is obtained; processing the prepared titanium ore precursor solution for 10s at a rotating speed of 1000rpm and then processing the solution for 30s at a rotating speed of 5000rpm, thereby continuously spin-coating the solution on the substrate processed in the step (3), and rapidly dripping about 300 mu L of anti-solvent chlorobenzene at the center of the substrate for 10s before the end of the procedure to induce rapid crystallization, so as to obtain a perovskite film; heating the perovskite film on a heating table at 120 ℃ for 15min to promote perovskite crystallization, and preparing a smooth and flat perovskite light absorption layer;
(4) Preparing a hole transport layer: 10mg of PTAA is dissolved in 1mL of chlorobenzene, 15 mu L of Li-TFSI solution (170 mg of Li-TSFI is dissolved in 1mL of acetonitrile) and 7.5 mu L of 4-tert-butylpyridine are added, and after being uniformly mixed, the mixture is treated for 30 seconds at a rotating speed of 2000rpm, so that a flat and smooth hole transport layer is obtained by spin coating on the upper layer of a perovskite light absorption layer;
(5) Preparing a second electrode: and (3) evaporating and depositing a gold electrode with the thickness of 80nm above the hole transport layer by using a vacuum evaporator to obtain the perovskite solar cell.
Test results and analysis
Perovskite solar cells of examples 1 to 4 and comparative examples 1 and comparative example 2 were grown at 100mW/cm -2 The performance test is carried out under the simulated sunlight irradiation, and the photoelectric performance result is shown in the table 1, so that the open-circuit voltage and the current of the perovskite solar cell modified by the self-assembly material are improved, and the photoelectric performance of the perovskite solar cell is obviously improvedPerformance.
TABLE 1 comparative results of photoelectric Properties
Fig. 4 is a graph of J-V (current density-photovoltage) for example 1 and comparative example 1, and it can be seen from the graph that the open circuit voltage and the short circuit current of the SAM-modified perovskite device are both significantly increased, and the improvement of the photoelectric properties is large. As can be seen from the scanning electron microscope image of the perovskite layer in FIG. 5, the addition of the self-assembled material modification layer promotes the growth of perovskite crystal grains, reduces crystal boundary and crystal defects, and obtains a better perovskite film. Fig. 6 is an energy level structure diagram of a perovskite device structure, and it can be seen that the addition of the self-assembled material modification layer enables the energy levels of the electron transport layer and the perovskite layer to be more matched, promotes the carrier transport capability, reduces non-radiative recombination, and improves the photoelectric performance of the device.
FIGS. 7 and 8 are based on SnO, respectively 2 Fluorescence spectrum (PL) and time resolved fluorescence spectrum (TRPL) of SAM (self assembled material)/perovskie (Perovskite), wherein the SAM layer is 2- (2-pyridyl) ethyltrimethoxysilane. The curve in fig. 8 is a quadratic fit curve of TRPL, and the smaller the carrier average lifetime τ, the shorter the carrier lifetime, the stronger the carrier transport ability can be calculated from the fit result. SnO (SnO) 2 The modification of SAM layer results in a decrease in peak intensity of PL and a decrease in carrier lifetime, which are indicative of SnO 2 The energy level of the solar cell is more matched with that of perovskite, the solar cell has better electron extraction and transmission capability and stronger carrier transmission capability, and further the photoelectric conversion efficiency of the solar cell is improved.
The above can be seen that the introduction of the silane coupling agent represented by trimethoxy silane as a self-assembled molecular modification layer promotes the extraction and transfer of the interface charges of the electron transport layer/perovskite light absorption layer, and optimizes the energy level arrangement; meanwhile, the perovskite crystal grain growth is promoted, the crystal grain size is improved, uncomplexed PbI2 and surface crystal boundary defects are reduced, and a non-radiative recombination center is obviously inhibited, so that the photoelectric performance of the perovskite solar cell is better improved.
In view of the numerous embodiments of the present invention, and the experimental data for each embodiment are huge and similar, not suitable for the individual listing herein, but the content of each embodiment that needs to be verified and the final conclusions that are obtained are close.
Although the present disclosure is disclosed above, the scope of the present disclosure is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the disclosure, and these changes and modifications will fall within the scope of the disclosure.
Claims (10)
1. The perovskite solar cell is characterized by comprising a first electrode, an electron transport layer, a self-assembled material modification layer, a perovskite light absorption layer, a hole transport layer and a second electrode which are sequentially stacked, wherein the self-assembled material modification layer is made of a silane coupling agent with trimethoxysilane groups and organic functional groups at two ends, and the organic functional groups are selected from thienyl, pyridyl or halogeno groups.
2. The perovskite solar cell of claim 1, wherein the self-assembled material modification layer is selected from one of thienyl trimethoxysilane, 2- (2-pyridyl) ethyl trimethoxysilane, and 3-chloropropyl trimethoxysilane.
3. The perovskite solar cell of claim 1, wherein the first electrode is selected from ITO or FTO and the second electrode is selected from at least one of a gold electrode and a silver electrode.
4. The perovskite solar cell of claim 1, wherein the material of the electron transport layer is selected from SnO 2 And/or TiO 2 。
5. The perovskite solar cell of claim 1, wherein the perovskite light absorbing layer is ABX n Y 3-n The crystal is formed by a crystal body,wherein A is organic cation FA + 、MA + Or Cs + FA is-HC (NH) 2 ) 2 MA is-CH 3 NH 3 The method comprises the steps of carrying out a first treatment on the surface of the B is Pb 2+ X and Y are I - 、Br - 、Cl - N ranges from 0 to 3.
6. The perovskite solar cell of claim 1, wherein the hole transport layer is one or more of spira-ome tad and/or PTAA.
7. A method of manufacturing a perovskite solar cell as claimed in any one of claims 1 to 6, comprising:
step S1, preparing a first electrode by using a transparent conductive substrate;
step S2, coating an electron transport layer material above the first electrode;
s3, dissolving the self-assembly material in an organic solvent to obtain a mixed solution, and spin-coating the mixed solution above the electron transport layer to obtain a self-assembly material modification layer;
step S4, spin-coating a perovskite precursor solution on the self-assembly material modification layer to prepare a perovskite light absorption layer;
step S5, spin-coating a hole transport layer material on the perovskite light absorption layer to prepare a hole transport layer;
and S6, preparing a second electrode by thermally depositing metal above the hole transport layer, and obtaining the perovskite solar cell.
8. The method of manufacturing a perovskite solar cell according to claim 7, wherein in step S3, spin-coating is performed at a spin-coating speed of 1000-6000rpm for 10-60S, and annealing is performed at a temperature of 70-120 ℃ for 5-20min after spin-coating is completed.
9. The method of manufacturing a perovskite solar cell according to claim 7, wherein in step S4, the perovskite precursor solution is prepared by mixing FAI, pbI 2 、MABr、PbBr 2 Dissolving CsI in a second organic solvent, wherein the FAI and PbI 2 、MABr、PbBr 2 The molar ratio of the components of CsI is 1:1.1:0.2:0.22:0.065.
10. The method for producing a perovskite solar cell according to claim 9, wherein the second organic solvent is at least one selected from the group consisting of N, N-dimethylformamide and dimethyl sulfoxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211672336.3A CN116234336A (en) | 2022-12-26 | 2022-12-26 | Perovskite solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211672336.3A CN116234336A (en) | 2022-12-26 | 2022-12-26 | Perovskite solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116234336A true CN116234336A (en) | 2023-06-06 |
Family
ID=86572166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211672336.3A Pending CN116234336A (en) | 2022-12-26 | 2022-12-26 | Perovskite solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116234336A (en) |
-
2022
- 2022-12-26 CN CN202211672336.3A patent/CN116234336A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112216799B (en) | Method for passivating perovskite and preparation process of perovskite solar cell | |
| CN108807694B (en) | Flat perovskite solar cell with ultralow temperature stability and preparation method thereof | |
| CN110350090B (en) | Bi2O2Se interface modified perovskite solar cell and preparation method thereof | |
| CN113437226B (en) | Preparation method of 4-pyridine methylamine bromine optimized tin-lead mixed perovskite solar cell | |
| CN110518123A (en) | Using composite material as the perovskite solar battery and preparation method of electron transfer layer | |
| CN111564560B (en) | Perovskite solar cell and preparation method thereof | |
| CN114975795A (en) | Modification method for cavity extraction interface in inverted perovskite solar cell and application of modification method | |
| CN112864329A (en) | Perovskite solar cell and preparation method thereof | |
| CN113130759B (en) | Method for quickly removing surface defects of halide perovskite thin film and application of method in perovskite solar cell | |
| Feng et al. | Efficient and stable perovskite solar cells: The effect of octadecyl ammonium compound side-chain | |
| Huang et al. | Efficient and stable hybrid conjugated polymer/perovskite quantum dot solar cells | |
| CN116234336A (en) | Perovskite solar cell and preparation method thereof | |
| CN114899321A (en) | Organic electron transport layer, perovskite solar cell, and preparation method and application thereof | |
| CN113416155A (en) | Preparation method and application of perovskite solar cell additive | |
| CN116507185B (en) | Formamidine perovskite solar cell and preparation method thereof | |
| CN113517405B (en) | High-performance self-powered perovskite type photoelectric detector based on CsI ion doped hole transport layer and preparation method thereof | |
| CN114574193B (en) | Method for extracting residual lead iodide from lead halogen perovskite material | |
| WO2024098538A1 (en) | Method for manufacturing solar cell by doping perovskite bulk with sulfonyl molecules | |
| CN116801683A (en) | Method for preparing electron transport layer by in-situ crosslinking of small organic molecules and application of electron transport layer | |
| CN109216553B (en) | CsSnI3Doped organic solar cell and preparation method thereof | |
| CN117545334A (en) | Surface-passivated perovskite film and preparation method and application thereof | |
| CN115867095A (en) | Perovskite precursor solution, perovskite solar cell and preparation method thereof | |
| CN117015250A (en) | Interface buffer solution, buffer layer, perovskite solar cell and preparation method | |
| KR20220105817A (en) | A method for manufacturing perovskite solar cell photo active layer and a perovskite solar cell manufactured by the same | |
| CN111477745A (en) | Solar cell and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |