CN110350090B - Bi2O2Se interface modified perovskite solar cell and preparation method thereof - Google Patents
Bi2O2Se interface modified perovskite solar cell and preparation method thereof Download PDFInfo
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- 238000000137 annealing Methods 0.000 claims description 22
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 21
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 16
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- 229910015711 MoOx Inorganic materials 0.000 claims description 13
- 238000004381 surface treatment Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
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- 238000001704 evaporation Methods 0.000 claims description 8
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- 239000004408 titanium dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
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Abstract
The invention belongs to the field of perovskite solar cells, and discloses a Bi2O2A perovskite solar cell modified by Se interface and a preparation method. The perovskite solar cell comprises a cathode substrate, an electron transmission layer, an interface modification layer, a perovskite light absorption layer, a hole transmission layer and an anode layer which are sequentially stacked; the electron transport layer is SnO2The interface modifying layer is Bi2O2Se, the perovskite light absorption layer is MAPbI3. The invention adopts Bi with high conductivity and high charge separation capacity2O2The Se material is used as an interface modification layer, so that the recombination of current carriers can be effectively reduced, the separation of charges is improved, and the photoelectric conversion efficiency of the perovskite solar cell is finally improved. Meanwhile, the stability of the device can be effectively improved by introducing the interface modification layer.
Description
Technical Field
The invention belongs to the field of perovskite solar cells, and particularly relates to Bi2O2A perovskite solar cell modified by Se interface and a preparation method.
Background
The perovskite solar cell has the advantages of simple structure, high energy conversion efficiency, easiness in solution method preparation and the like. The energy conversion efficiency of the perovskite solar cell is improved from 3.8% to 24.2% in short nine-year development time, and the perovskite solar cell enters a solar cell array with high energy conversion efficiency. However, perovskite solar cells still need to be improved in stability compared to commercial silicon solar cells.
The working principle of the perovskite solar cell is as follows: (1) light irradiates the active layer through the transparent ITO electrode, and the perovskite light absorption layer absorbs photons to generate excitons; the exciton diffuses to the interface; (2) the holes are transmitted through the hole transmission layer, and the electrons are transmitted through the electron transmission layer; (3) electrons reach the cathode and holes reach the anode; (4) under an external load, a closed loop is formed, forming photocurrent, photovoltage, and output power.
Despite the great progress made in energy conversion efficiency of perovskite solar cells, the poor stability thereof is still an important problem to be solved urgently. Titanium dioxide, which is the most commonly used electron transport layer material for perovskite solar cells, has a low electron transport rate and undergoes a photocatalytic reaction under ultraviolet irradiation, which can cause decomposition of the perovskite thin film. Tin dioxide can be prepared by a low-temperature solution method due to the good visible light permeability and the high electron mobility, and the good light stability is considered to be the best substitute material of titanium dioxide. Modification as a commonly used modification method, it may be: (1) the conductivity of the material is improved, and the introduction of the modification energy level is beneficial to the transmission of electrons; (2) better energy level matching is formed, and the transmission and separation of carriers are promoted; (3) the appearance of the light absorption layer is improved, so that the contact of the interface is tighter, the transmission of current carriers is better, and the recombination is reduced. However, new methods are still needed to further improve the energy conversion efficiency and stability of the perovskite solar cell.
Disclosure of Invention
Aiming at the defects and shortcomings of the prior art, the invention firstly aims to provide Bi2O2Perovskite solar cell of Se interface modification.
Another object of the present invention is to provide the above-mentioned Bi2O2A preparation method of a perovskite solar cell modified by a Se interface.
The purpose of the invention is realized by the following technical scheme:
bi2O2The Se interface modified perovskite solar cell comprises a cathode substrate, an electron transmission layer, an interface modification layer, a perovskite light absorption layer, a hole transmission layer and an anode layer which are sequentially stacked; the electron transport layer is SnO2The interface modifying layer is Bi2O2Se, the perovskite light absorption layer is MAPbI3(CH3NH3PbI3)。
Further, the cathode substrate is indium tin oxide glass (ITO).
Further, the SnO2The thickness of the film is 40-50 nm, Bi2O2The thickness of the Se interface modification layer is 20-60 nm.
Furthermore, the thickness of the perovskite light absorption layer is 400-450 nm.
Further, the hole transport layer includes Spiro-OMeTAD and MoOx(ii) a The thickness of the Spiro-OMeTAD is 40-50 nm, and the MoOxThe thickness is 2 to 3 nm.
Furthermore, the anode layer is made of silver, and the thickness of the anode layer is 80-100 nm.
Bi as defined above2O2Se interface modified SnO2The preparation method of the perovskite solar cell of the electron transport layer comprises the following steps: the cathode substrate is subjected to surface treatment and then is sequentially subjected to spin coating to prepare an electron transport layer, an interface modification layer and a perovskite light absorption layer, and then a hole transport layer and an anode layer are prepared to obtain Bi2O2Perovskite solar cell of Se interface modification.
Further, the cathode substrate is subjected to surface treatment by the following steps: sequentially ultrasonically cleaning with detergent, deionized water, acetone, anhydrous ethanol and isopropanol for 20min, and drying in a vacuum drying oven at 80 deg.C; and finally, carrying out plasma surface treatment on the cleaned and dried cathode substrate for 10 min.
Further, the steps of preparing the electron transport layer and the interface modification layer by spin coating are as follows:
SnO2Spin coating the surface-treated cathode substrate with an aqueous solution, annealing, and annealing the annealed SnO2Spin coating of Bi on thin films2O2Dichlorobenzene solution of Se.
Preferably, the annealing treatment temperature is 150 ℃ and the time is 1 h; the spin coating of Bi2O2The rotating speed of the dichlorobenzene solution of Se is 2000-5000 rpm.
Further, the steps of preparing the perovskite light absorption layer by spin coating are as follows:
will PbI2And MAI in a mixed solvent of DMF and DMSO, and mixing the obtained mixtureSpin coating on the interface modification layer, and annealing to obtain MAPbI3A perovskite light absorbing layer.
Preferably, the PbI is2And MAI in a molar ratio of 1.35:1.3, and the volume ratio of DMF to DMSO is 4: 1; the annealing temperature is 100 ℃, and the annealing time is 20 min.
Further, the step of preparing the hole transport layer is as follows:
dissolving Spiro-OMeTAD in chlorobenzene, adding tBP (tetra-tert-butylpyridine) and Li-TFSI (lithium bis (trifluoromethane sulfonyl imide)), spin-coating the obtained mixed solution on a perovskite light absorption layer, and then evaporating MoOx on the surface of the Spiro-OMeTAD to obtain the hole transport layer.
The perovskite solar cell has the following advantages and beneficial effects:
bi of the present invention2O2Se interface modified perovskite solar cell adopting Bi with high conductivity and high charge separation capacity2O2The Se material is used as an interface modification layer, so that the recombination of current carriers can be effectively reduced, the separation of charges is improved, and the photoelectric conversion efficiency of the perovskite solar cell is finally improved. Meanwhile, the stability of the device can be effectively improved by introducing the interface modification layer.
Drawings
FIG. 1 shows Bi obtained in example 1 of the present invention2O2Se interface modified perovskite solar cell device (Bi)2O2Se5000rpm) versus voltage of an unmodified perovskite solar cell device (RT).
FIG. 2 shows Bi obtained in example 1 of the present invention2O2Se interface modified perovskite solar cell device (Bi)2O2Se5000rpm) versus unmodified perovskite solar cell device (RT) stability results.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited thereto.
Example 1
A Bi of this example2O2Se interface modified SnO2The perovskite solar cell device structure of the electron transport layer is as follows: ITO/SnO2/Bi2O2Se/MAPbI3/Spiro-OMeTAD/MoOxand/Ag. The specific preparation process flow is as follows:
(1) and ultrasonically cleaning the ITO substrate for 20 minutes by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol in sequence, and then drying in a vacuum drying oven at 80 ℃. And carrying out plasma surface treatment on the surface of the cleaned and dried ITO substrate for 10 minutes, wherein the treatment method utilizes the strong oxidizing property of ozone generated under microwave to clean residual organic matters and the like on the surface of the ITO substrate and simultaneously improve the work function of the surface of the ITO substrate.
(2) Spin coating an electron transport layer SnO on the ITO surface treated in the step (1)2The interface modifying layer is Bi2O2Se。SnO2SnO purchased from alfa2The aqueous solution colloid was diluted 5 times with deionized water. A certain amount of Bi2O2Grinding Se powder, dispersing in dichlorobenzene solution, ultrasonic-assisted powder dispersion (48h), filtering with 0.45 μm organic filter head to obtain light green filtrate, and weighing Bi in the filter head2O2The mass of Se is calculated to obtain Bi2O2And (4) diluting the solution to be 2mg/mL solution for later use according to the mass concentration of Se. Diluting the SnO2The aqueous solution is coated on the surface of the processed ITO substrate in a rotating mode, the rotating speed is 3500rpm, and the time is 40 s; subsequently, annealing treatment was performed at 150 ℃ for 1 hour. SnO after annealing2Spin coating Bi on the layer at 5000rpm2O2Dichlorobenzene solution of Se. After two hours, plasma surface treatment is carried out on the interface modification layer for 10 minutes, and a perovskite light absorption layer is prepared for spin coating.
(3) Spin coating perovskite light absorption layer solution on the surface of the interface modification layer; firstly, PbI is added2And MAI were dissolved in a 4:1 volume ratio of DMF to DMSO mixture at a molar ratio of 1.35:1.3, and stirred at 70 ℃ for 12 hours. Spin coating perovskite solution on the surface of the electron transport layer, pre-spin coating at a rotation speed/time of 500rpm/3s, and uniformly spin coating the perovskite solution on the substrate at a rotation speed/time of 3500rpm/40sAt the 10 th s, 200. mu.L of chlorobenzene solution was added dropwise as an antisolvent to promote film formation crystallization of perovskite. Annealing at 100 ℃ for 20min to obtain the perovskite layer with the thickness of 400-450 nm.
(4) Preparation of hole transport layers Spiro-OMeTAD and MoO on the above perovskite layerx(ii) a The preparation process of the Spiro-OMeTAD comprises the following steps: 72.3mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene solution and 29. mu.L of tBP (tetra-tert-butylpyridine) and 18. mu.L of Li-TFSI (520mg/mL of lithium bis (trifluoromethanesulfonylimide) in acetonitrile) were added and the solution was spin-coated onto the perovskite layer at 4000rpm/30S rpm/time. Evaporating a hole transport layer MoO on the surface of the Spiro-OMADxThe thickness is 2-3 nm. And then depositing silver as an anode layer on the surface of the hole transport layer by evaporation, wherein the thickness of the silver is 80-100 nm. To obtain Bi2O2Se interface modified perovskite solar cell device: ITO/SnO2/Bi2O2Se/MAPbI3/Spiro-OMeTAD /MoOx/Ag。
FIG. 1 shows Bi obtained in this example2O2Se interface modified SnO2Perovskite solar cell device of electron transport layer and unmodified perovskite solar cell device (ITO/SnO)2/MAPbI3/Spiro-OMeTAD/MoOxAg) current density versus voltage. It can be seen from FIG. 1 that the open circuit voltage (V) of the unmodified perovskite solar celloc) 1.05V, short-circuit current density (J)sc) Is 21.86mA/cm2Fill Factor (FF) is 71.1%; the open-circuit voltage (V) of the modified perovskite solar cell isoc) 1.07V, short-circuit current density (J)sc) Is 22.45mA/cm2The Fill Factor (FF) was 73.8. This shows that Bi2O2Se interface modified SnO2The open-circuit voltage, the short-circuit current and the filling factor can be effectively improved.
Bi obtained in this example2O2Se interface modified SnO2The photoelectric property pair ratios of the perovskite solar cell device of the electron transport layer and the unmodified perovskite solar cell device are shown in table 1:
TABLE 1
As can be seen from Table 1, the open circuit voltage (V) of the present embodimentOC) The increase from 1.05 to 1.07 and the increase in Fill Factor (FF) from 71.1% to 73.8% indicate that Bi2O2The current carrier recombination of the perovskite battery after Se interface modification is effectively reduced, and the photoelectric conversion efficiency of the device is improved from 16.29% to 17.78%.
Bi obtained in this example2O2Se interface modified perovskite solar cell device and unmodified perovskite solar cell device (ITO/SnO)2/MAPbI3/Spiro-OMeTAD/MoOxAg) stability results are shown in FIG. 2, Bi2O2After 35 days, the perovskite solar cell after Se interface modification still has 14.77% of energy conversion efficiency, and the initial efficiency of 83% is kept. The unmodified perovskite solar cell has an energy conversion efficiency of only 8.77%, which is 54% of the initial efficiency. Thus Bi2O2The perovskite solar cell modified by the Se interface can effectively improve the stability of the device.
Example 2
A Bi of this example2O2Se interface modified SnO2The perovskite solar cell device structure of the electron transport layer is as follows: ITO/SnO2/Bi2O2Se/MAPbI3/Spiro-OMeTAD/MoOxand/Ag. The specific preparation process flow is as follows:
(1) and ultrasonically cleaning the ITO substrate for 20 minutes by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol in sequence, and then drying in a vacuum drying oven at 80 ℃. And carrying out plasma surface treatment on the surface of the cleaned and dried ITO substrate for 10 minutes, wherein the treatment method utilizes the strong oxidizing property of ozone generated under microwave to clean residual organic matters and the like on the surface of the ITO substrate and simultaneously improve the work function of the surface of the ITO substrate.
(2) Spin coating an electron transport layer SnO on the ITO surface treated in the step (1)2The interface modifying layer is Bi2O2Se。SnO2SnO purchased from alfa2Dissolving in waterLiquid colloid, diluted 5 times with deionized water. A certain amount of Bi2O2Grinding Se powder, dispersing in dichlorobenzene solution, ultrasonic-assisted powder dispersion (48h), filtering with 0.45 μm organic filter head to obtain light green filtrate, and weighing Bi in the filter head2O2The mass of Se is calculated to obtain Bi2O2And (4) diluting the solution to be 2mg/mL solution for later use according to the mass concentration of Se. Diluting the SnO2The aqueous solution is coated on the surface of the processed ITO substrate in a rotating mode, the rotating speed is 3500rpm, and the time is 40 s; subsequently, annealing treatment was performed at 150 ℃ for 1 hour. SnO after annealing2Spin coating Bi on the layer at 3500rpm2O2Dichlorobenzene solution of Se. After two hours, plasma surface treatment is carried out on the interface modification layer for 10 minutes, and a perovskite light absorption layer is prepared for spin coating.
(3) Spin coating perovskite light absorption layer solution on the surface of the interface modification layer; firstly, PbI is added2And MAI were dissolved in a 4:1 volume ratio of DMF to DMSO mixture at a molar ratio of 1.35:1.3, and stirred at 70 ℃ for 12 hours. Spin-coating a perovskite solution on the surface of the interface modification layer, firstly spin-coating at a rotation speed/time of 500rpm/3s in advance, then uniformly spin-coating the perovskite solution on a substrate at a rotation speed/time of 3500rpm/40s, and dropwise adding 200 mu L of chlorobenzene solution as an anti-solvent at the 10 th s to promote film-forming crystallization of the perovskite. Annealing at 100 ℃ for 20min to obtain the perovskite layer with the thickness of 400-450 nm.
(4) Preparation of hole transport layers Spiro-OMeTAD and MoO on the above perovskite layerx(ii) a The preparation process of the Spiro-OMeTAD comprises the following steps: 72.3mg of Spiro-OMAD was dissolved in 1mL of chlorobenzene solution and 29. mu.L of tBP (tetra-tert-butylpyridine) and 18. mu.L of Li-TFSI (520mg/mL of lithium bistrifluoromethanesulfonylimide in acetonitrile) were added and the solution was spin-coated onto the perovskite layer at 4000rpm/30 s/time. Evaporating a hole transport layer MoO on the surface of the Spiro-OMADxThe thickness is 2-3 nm. And then depositing silver as an anode layer on the surface of the hole transport layer by evaporation, wherein the thickness of the silver is 80-100 nm. To obtain Bi2O2Se interface modified perovskite solar cell device: ITO/SnO2/Bi2O2Se/MAPbI3/Spiro-OMeTAD/MoOx/Ag。
Example 3
A Bi of this example2O2Se interface modified SnO2The perovskite solar cell device structure of the electron transport layer is as follows: ITO/SnO2/Bi2O2Se/MAPbI3/Spiro-OMeTAD/MoOxand/Ag. The specific preparation process flow is as follows:
(1) and ultrasonically cleaning the ITO substrate for 20 minutes by using liquid detergent, deionized water, acetone, absolute ethyl alcohol and isopropanol in sequence, and then drying in a vacuum drying oven at 80 ℃. And carrying out plasma surface treatment on the surface of the cleaned and dried ITO substrate for 10 minutes, wherein the treatment method utilizes the strong oxidizing property of ozone generated under microwave to clean residual organic matters and the like on the surface of the ITO substrate and simultaneously improve the work function of the surface of the ITO substrate.
(2) Spin coating an electron transport layer SnO on the ITO surface treated in the step (1)2The interface modifying layer is Bi2O2Se：SnO2SnO purchased from alfa2The aqueous solution colloid was diluted 5 times with deionized water. A certain amount of Bi2O2Grinding Se powder, dispersing in dichlorobenzene solution, ultrasonic-assisted powder dispersion (48h), filtering with 0.45 μm organic filter head to obtain light green filtrate, and weighing Bi in the filter head2O2The mass of Se is calculated to obtain Bi2O2And (4) diluting the solution to be 2mg/mL solution for later use according to the mass concentration of Se. Diluting the SnO2The aqueous solution is coated on the surface of the processed ITO substrate in a rotating mode, the rotating speed is 3500rpm, and the time is 40 s; subsequently, annealing treatment was performed at 150 ℃ for 1 hour. SnO after annealing2Spin coating Bi on the layer at 2000 rpm2O2Dichlorobenzene solution of Se. After two hours, plasma surface treatment is carried out on the interface modification layer for 10 minutes, and a perovskite light absorption layer is prepared for spin coating.
(3) Spin coating perovskite light absorption layer solution and Spiro-OMeTAD on the surface of the interface modification layer; firstly, PbI is added2And MAI were dissolved in a 4:1 volume ratio of DMF to DMSO mixture at a molar ratio of 1.35:1.3, and stirred at 70 ℃ for 12 hours. Spin on the surface of the interface modification layerCoating a perovskite solution, namely pre-spin coating at the rotating speed/time of 500rpm/3s, then uniformly spin coating the perovskite solution on a substrate at the rotating speed/time of 3500rpm/40s, and dropwise adding 200 mu L of chlorobenzene solution as an anti-solvent at the 10 th s to promote the film-forming crystallization of the perovskite. Annealing at 100 deg.C for 20min to obtain perovskite layer with thickness of about 400 nm.
(4) Preparation of hole transport layers Spiro-OMeTAD and MoO on the above perovskite layerx(ii) a The preparation process of the Spiro-OMeTAD comprises the following steps: 72.3mg of Spiro-OMAD was dissolved in 1mL of chlorobenzene solution and 29. mu.L of tBP (tetra-tert-butylpyridine) and 18. mu.L of Li-TFSI (520mg/mL of lithium bistrifluoromethanesulfonylimide in acetonitrile) were added and the solution was spin-coated onto the perovskite layer at 4000rpm/30 s/time. Evaporating a hole transport layer MoO on the surface of the Spiro-OMADxThe thickness is 2 nm. And then depositing silver as an anode layer on the surface of the hole transport layer by evaporation, wherein the thickness of the silver is 80-100 nm. To obtain Bi2O2Se interface modified perovskite solar cell device: ITO/SnO2/Bi2O2Se/MAPbI3/Spiro-OMeTAD/MoOx/Ag。
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (8)
1. Bi2O2Se interface modified perovskite solar cell is characterized in that: the perovskite solar cell comprises a cathode substrate, an electron transmission layer, an interface modification layer, a perovskite light absorption layer, a hole transmission layer and an anode layer which are sequentially stacked; the electron transport layer is SnO2The interface modifying layer is Bi2O2Se, the perovskite light absorption layer is MAPbI3；
The SnO2The thickness of the film is 40-50 nm, Bi2O2The thickness of the Se interface modification layer is 20-60 nm;
the described vaginaThe electrode substrate is ITO, and the thickness of the perovskite light absorption layer is 400-450 nm; the hole transport layer comprises Spiro-OMeTAD and MoOx(ii) a The thickness of the Spiro-OMeTAD is 40-50 nm, and the MoOxThe thickness is 2-3 nm; the anode layer is made of silver, and the thickness of the anode layer is 80-100 nm.
2. A Bi according to claim 12O2The preparation method of the perovskite solar cell modified by the Se interface is characterized by comprising the following steps: the cathode substrate is subjected to surface treatment and then is sequentially subjected to spin coating to prepare an electron transport layer, an interface modification layer and a perovskite light absorption layer, and then a hole transport layer and an anode layer are prepared to obtain Bi2O2Perovskite solar cell of Se interface modification.
3. The Bi of claim 22O2The preparation method of the Se interface modified perovskite solar cell is characterized in that the cathode substrate is subjected to surface treatment and comprises the following steps: sequentially ultrasonically cleaning with detergent, deionized water, acetone, anhydrous ethanol and isopropanol for 20min, and drying in a vacuum drying oven at 80 deg.C; and finally, carrying out plasma surface treatment on the cleaned and dried cathode substrate for 10 min.
4. The Bi of claim 22O2The preparation method of the Se interface modified perovskite solar cell is characterized in that the steps of preparing the electron transport layer and the interface modification layer by spin coating are as follows:
SnO2Spin coating the surface-treated cathode substrate with an aqueous solution, annealing, and annealing the annealed SnO2Spin coating of Bi on thin films2O2Dichlorobenzene solution of Se.
5. The Bi according to claim 42O2The preparation method of the perovskite solar cell modified by the Se interface is characterized by comprising the following steps: the annealing temperature is 150 ℃, and the annealing time is 1 h; the spin coating of Bi2O2The rotating speed of the dichlorobenzene solution of Se is 2000-5000 rpm.
6. The Bi of claim 22O2The preparation method of the Se interface modified perovskite solar cell is characterized in that the steps of preparing the perovskite light absorption layer by spin coating are as follows:
will PbI2Dissolving MAI in a mixed solvent of DMF and DMSO, spin-coating the obtained mixed solution on the interface modification layer, and annealing to obtain MAPbI3A perovskite light absorbing layer.
7. The Bi according to claim 62O2The preparation method of the perovskite solar cell modified by the Se interface is characterized by comprising the following steps: the PbI2And MAI in a molar ratio of 1.35:1.3, and the volume ratio of DMF to DMSO is 4: 1; the annealing temperature is 100 ℃, and the annealing time is 20 min.
8. The Bi of claim 22O2The preparation method of the Se interface modified perovskite solar cell is characterized by comprising the following steps of:
dissolving Spiro-OMeTAD in chlorobenzene, adding tBP and Li-TFSI, spin-coating the obtained mixed solution on a perovskite light absorption layer, and then evaporating MoO on the surface of the Spiro-OMeTADxAnd obtaining the hole transport layer.
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