CN116232449A - Detection circuit for detecting received signal strength and signal loss of optical receiver - Google Patents

Detection circuit for detecting received signal strength and signal loss of optical receiver Download PDF

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CN116232449A
CN116232449A CN202310223214.4A CN202310223214A CN116232449A CN 116232449 A CN116232449 A CN 116232449A CN 202310223214 A CN202310223214 A CN 202310223214A CN 116232449 A CN116232449 A CN 116232449A
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pin
voltage
resistor
control unit
main control
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方刘海
姚海军
江月成
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Chengdu Rongbo Communication Technology Co ltd
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Chengdu Rongbo Communication Technology Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
    • H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
    • H04B10/077—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using a supervisory or additional signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
    • H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
    • H04B10/077—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using a supervisory or additional signal
    • H04B10/0773—Network aspects, e.g. central monitoring of transmission parameters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
    • H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
    • H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
    • H04B10/0795—Performance monitoring; Measurement of transmission parameters
    • H04B10/07955—Monitoring or measuring power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/564—Power control
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Optical Communication System (AREA)

Abstract

The invention discloses a detection circuit for detecting the intensity of a received signal and the loss of the signal of an optical receiver, which comprises a micro control unit MCU, an avalanche photodiode APD, a hysteresis comparison circuit and a main control unit with a boosting function and a two-path mirror image current output function; the micro control unit MCU detects the intensity of the optical signal by receiving one path of mirror current output by the main control unit; the hysteresis comparison circuit detects loss of the optical signal through the voltage signal converted from the other path of mirror current output by the main control unit and the voltage signal output by the MCU. The invention can realize the RX Power detection and the LOS detection of the received light on the 50G PON ONU simultaneously by combining the existing chip and the hysteresis comparison circuit, and effectively solves the technical problem that the current 50G PON ONU can not realize the RX Power detection and the LOS detection simultaneously without a special LA chip.

Description

Detection circuit for detecting received signal strength and signal loss of optical receiver
Technical Field
The invention relates to the technical field of optical communication, in particular to a detection circuit for detecting the received signal intensity and signal loss of an optical receiver, which is particularly suitable for detecting the received signal intensity and signal loss of 50G PON ONU (optical network Unit) received light.
Background
In an optical fiber communication system, the task of the optical receiver is to recover information carried by an optical carrier after optical fiber transmission with minimum additional noise and distortion, so that the output characteristic of the optical receiver comprehensively reflects the performance of the whole optical fiber communication system.
In order to ensure stable and reliable transmission of optical signals, signal strength (RX Power) detection and LOSs of signal (LOS) detection are required for the received optical signals in practical applications. RX Power detection refers to detecting the received optical signal strength, and is used to determine whether the received signal strength satisfies the requirement. The LOS detection refers to detecting whether the intensity of the received optical signal is lower than a set threshold value, so as to judge whether the signal exceeds the acceptable range. According to the design and register configuration of the optical module, LOS detection is summarized as two implementation methods: average optical power LOS and signal LOS. The average optical power LOS is determined according to the magnitude of the average optical power of the input light, and the signal LOS is determined according to the magnitude of the signal in the input light. When the intensity of the received optical signal is lower than a certain set threshold value, the optical module needs to report LOS. Specifically, there are LOSA, LOSD, and LOSH indicators. The LOSA indicator is a loss of signal indicator, and determines that the signal confirmation is lost when the received optical signal strength is less than a certain threshold. The LOSD index is a loss of signal recovery indication, and when the received optical signal strength is greater than a certain threshold, the loss of signal recovery is determined. Because the comparison is realized by adopting a comparator with a certain hysteresis effect, the value of the optical power corresponding to the LOSD index is larger than the value corresponding to the LOSA index. The LOSH index refers to loss of signal hysteresis, the comparator is a hysteresis comparator, and the comparison is reflected to the power value to represent the power difference value of loss of signal and loss recovery.
In the prior art, two paths are adopted for the PON ONU with the rate of 10G and below to respectively implement RX Power detection and LOS detection, specifically as follows:
RX Power detection: as shown in fig. 2, since PON ONU receives an optical signal by using an avalanche photodiode APD (AvalanchePhotodiode Detectors), detection of RX Power is generally achieved by mirroring APD current with a booster circuit.
LOS detection: the detection is performed by adopting a signal differential amplitude detection and judgment mode (namely, signal LOS), as shown in fig. 2, the received light enters an APD to generate photocurrent, the photocurrent is converted into differential output voltage through TIA (Trans-Impedance Amplifier ), the differential output voltage is connected with an LA (Limiting Amplifier, limiting amplification chip) to perform limiting amplification on the signal, and the LA acquires the level swing of the received and input signal and compares the level swing with a set LOS threshold level to finally output an LOS signal.
The detection mode can effectively realize the intensity detection of the PON ONU optical signals with the speed of 10G and below and the loss detection of the optical signals. However, with the continuous innovation of service application, the gigabit optical network is changing from the gigabit connection capability of "bandwidth" to the gigabit service capability of "bandwidth+experience", such as digital transformation of industrial PON booster factories, and FTTR booster people smoothly share digital life. Meanwhile, the evolution of 10G PON towards 50G PON is already the norm, whether standard or scheme, at the technical level. However, since the current 50G PON does not have a dedicated LA chip, LOS detection of signals cannot be achieved by detecting the signal amplitude by the LA chip.
In addition, patent document CN104168067a also discloses a method for judging the optical power signal intensity in the optical receiving circuit and a circuit thereof, and the method realizes the judgment of the optical power signal intensity of the optical receiving circuit by software, and can realize the detection of the signal intensity. But the method also uses a special limiting amplifier chip to integrate the signal amplitude detection and comparator functions. It is also unable to realize the RX Power detection function and the LOS detection function simultaneously without the limiting amplifier chip of the 50G rate PON at present.
For this reason, it is necessary to solve the above-mentioned problems by using the technology under the existing conditions on the basis that the current 50G PON has no dedicated LA chip.
Disclosure of Invention
The invention aims to provide a detection circuit for detecting the received signal strength and signal LOSs of an optical receiver, which can simultaneously realize RX Power detection and LOS detection of received light on a 50G PON ONU through the combination of an existing chip and a hysteresis comparison circuit, and effectively solves the technical problem that the current 50G PON cannot simultaneously realize RX Power detection and LOS detection without a special LA chip.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a detection circuit for detecting received signal strength and signal loss of an optical receiver, characterized by: the device comprises a micro control unit MCU, an avalanche photodiode APD, a hysteresis comparison circuit and a main control unit with a boosting function and a two-path mirror current output function;
the main control unit comprises a main control chip, a boost circuit, a first voltage conversion circuit and a second voltage conversion circuit, and the main control chip is provided with a high-voltage input pin, a high-voltage output pin, a voltage feedback pin, a first mirror current pin with 1/5 mirror proportion and a second mirror current pin with 1/2 mirror proportion;
the hysteresis comparison circuit is provided with a first voltage input end, a second voltage input end and a signal output end;
the micro control unit MCU comprises a comparison voltage output DAC pin, a boost control DAC pin and a mirror current receiving ADC pin;
the avalanche photodiode APD has a voltage input pin;
the voltage feedback pin of the main control chip is connected with the voltage input pin of the avalanche photodiode APD, the first mirror current pin of the main control chip is converted into voltage by the first voltage conversion circuit and then is connected with the mirror current receiving ADC pin of the micro control unit MCU, the second mirror current pin of the main control chip is converted into voltage by the second voltage conversion circuit and then is connected with the second voltage input end of the hysteresis comparison circuit, and the comparison voltage output DAC pin of the micro control unit MCU is connected with the first voltage input end of the hysteresis comparison circuit;
the micro control unit MCU detects the intensity of an optical signal through the conversion voltage received by the mirror current receiving ADC pins; the hysteresis comparison circuit detects loss of the optical signal through the voltage signals input by the first voltage input end and the second voltage input end, and outputs a detection result of the loss of the signal.
The first voltage conversion circuit comprises a first resistor, one end of which is grounded, and the other end of which is connected with a first mirror current pin.
The second voltage conversion circuit comprises a second resistor, one end of which is grounded, and the other end of which is connected with a second mirror current pin.
And a third resistor is arranged between the high-voltage output pin of the main control chip and the voltage input pin of the avalanche photodiode APD.
A fourth resistor and a fifth resistor are connected in series between a comparison voltage output DAC pin of the micro control unit MCU and a first voltage input end of the hysteresis comparison circuit, and a grounding capacitor is arranged between the fourth resistor and the fifth resistor.
And a grounding capacitor and a sixth resistor are sequentially arranged between the second mirror current pin of the main control chip and the second voltage input end of the hysteresis comparison circuit.
The signal output end of the hysteresis comparison circuit is also sequentially connected with a seventh pull-up resistor and an eighth resistor in series.
The invention has the advantages that:
1. the invention can realize the RX Power detection and the LOS detection of the received light on the 50G PON ONU simultaneously by combining the prior main control chip with the boosting function and the two paths of mirror current output functions and the hysteresis comparison circuit, thereby effectively solving the technical problem that the RX Power detection and the LOS detection cannot be realized simultaneously without a special LA chip of the prior 50G PON ONU. Compared with the prior art, the invention achieves new technical effects through the combination of the prior art, or the technical effects after the combination are superior to the sum of the effects of each technical feature, so that the invention has unexpected technical effects.
2. The invention simultaneously realizes sampling detection and low-light LOS detection under the RX Power full dynamic range through the integrated chip of 1 boost plus two-way mirror image output and the external hysteresis comparison circuit, and has initiative on the solution.
3. The invention is convenient to convert the mirror current with the proportion of only 1/2 into a proper voltage value through the second resistor, and is favorable for comparison and judgment of a subsequent circuit.
4. The invention can adjust the working bias voltage of the APD under the high light through the third resistor, and the larger the photocurrent generated under the high light condition is, the more the partial pressure is generated on the third resistor, and the working voltage given to the avalanche photodiode APD is properly smaller, thus being beneficial to improving the gain of the avalanche photodiode APD under the high light.
5. According to the invention, the fourth resistor, the fifth resistor and the grounding capacitor between the MCU and the hysteresis comparison circuit and the sixth resistor and the grounding capacitor between the master control chip and the hysteresis comparison circuit can play an effective bypass filtering role, so that the detection accuracy is improved.
6. The invention is favorable for ensuring stable output of voltage through the seventh pull-up resistor connected with the signal output end of the hysteresis comparison circuit.
Drawings
FIG. 1 is a circuit block diagram of the present invention;
fig. 2 is a schematic block diagram of a prior art implementation of RX Power detection and LOS detection.
Detailed Description
Because the 50G PON ONU does not have a special LA chip for realizing signal amplitude detection and outputting LOS, the invention considers that the LOS function (namely average optical Power LOS) is realized in the mode of detecting RX Power, and the APD mirror current of the avalanche photodiode is required to realize the RX Power detection function and the LOS detection function, so that RXPower detection and LOS signal detection are simultaneously realized through integrating a boosting function and a hysteresis comparison circuit with the periphery of a chip matched with two paths of mirror current output.
The invention is described in detail below with reference to the attached drawings:
as shown in FIG. 1, a detection circuit for detecting the received signal strength and signal loss of an optical receiver comprises a micro control unit MCU, an avalanche photodiode APD, a hysteresis comparison circuit and a main control unit with a boosting function and a two-path mirror current output function.
The main control unit comprises a main control chip, a boost circuit, a first voltage conversion circuit and a second voltage conversion circuit. The main control chip preferably adopts an EOC7003 chip and is provided with a high-voltage input pin MIRIN, a high-voltage output pin MIROUT, a voltage feedback pin FB, a first mirror current pin MIR1 with a 1/5 mirror proportion and a second mirror current pin MIR2 with a 1/2 mirror proportion.
The hysteresis comparison circuit is provided with a first voltage input end Up, a second voltage input end Un and a signal output end Uo.
The micro control unit MCU comprises a comparison voltage output DAC pin H5, a boost control DAC pin H6 and a mirror current receiving ADC pin G7.
The avalanche photodiode APD has a voltage input pin Vapd.
The specific connection relation of each component is as follows: the boost circuit is respectively connected with a voltage feedback pin FB of the main control chip and a boost control DAC pin H6 of the micro control unit MCU, a high voltage output pin MIROUT of the main control chip is connected with a voltage input pin Vapd of the avalanche photodiode APD, a first mirror current pin MIR1 of the main control chip is converted into voltage by a first voltage conversion circuit and then is connected with a mirror current receiving ADC pin G7 of the micro control unit MCU, a second mirror current pin MIR2 of the main control chip is converted into voltage by a second voltage conversion circuit and then is connected with a second voltage input end Un of the hysteresis comparison circuit, a comparison voltage output DAC pin H5 of the micro control unit MCU is connected with a first voltage input end Up of the hysteresis comparison circuit, and a signal output end Uo of the hysteresis comparison circuit is connected to a QSFP28 Connector (the QSFP28 Connector is a QSFP28 packaging Connector, and actually an electric interface of a module is in accordance with QSFP28MSA protocol).
In an embodiment of the present invention, the first voltage conversion circuit includes a first resistor R9 having one end grounded and the other end connected to the first mirror current pin MIR1, and the resistance value of the first resistor R9 is 6.04kohm.
In an embodiment of the present invention, the second voltage conversion circuit includes a second resistor R7 having one end grounded and the other end connected to the second mirror current pin MIR2, and the resistance value of the second resistor R7 is 20kohm.
In the embodiment of the invention, a third resistor R6 is arranged between the high-voltage output pin MIROUT of the main control chip and the voltage input pin Vapd of the avalanche photodiode APD.
In the embodiment of the invention, a fourth resistor R11 and a fifth resistor R12 are connected in series between the comparison voltage output DAC pin H5 of the micro control unit MCU and the first voltage input end Up of the hysteresis comparison circuit, and a grounding capacitor C8 is arranged between the fourth resistor R11 and the fifth resistor R12.
In the embodiment of the invention, a grounding capacitor C10 and a sixth resistor R15 are sequentially arranged between a second mirror current pin MIR2 of the main control chip and a second voltage input end Un of the hysteresis comparison circuit.
In the embodiment of the invention, the signal output end Uo of the hysteresis comparison circuit is further connected in series with a seventh pull-up resistor R13 and an eighth resistor R14 in sequence, the resistance value of the seventh pull-up resistor R13 is 10kohm, the pull-up resistor is pulled up to VCC3V3, and the high level output is ensured to be stabilized to 3V3.
When the signal intensity of the received light needs to be detected, the main control chip outputs the mirror current with the mirror proportion of 1/5 to the micro control unit MCU through the first mirror current pin MIR1, the micro control unit MCU receives the conversion voltage of the mirror current through the mirror current receiving ADC pin G7, and then the detection of RX Power can be realized through ADC sampling.
When the signal LOSs of the received light needs to be detected, the main control chip outputs mirror current with the mirror proportion of 1/2 through a second mirror current pin MIR2, the mirror current is converted into a voltage signal through a second voltage conversion circuit and then is input into a second voltage input end Un of the hysteresis comparison circuit, meanwhile, the micro control unit MCU inputs a preset threshold voltage signal to a first voltage input end Up of the hysteresis comparison circuit through a comparison voltage output DAC pin H5, the hysteresis comparison circuit compares the voltage signal input by the main control chip with the preset threshold voltage signal to judge whether the light LOSs condition occurs, and the detection result of the signal LOSs is output after the comparison is completed, so that LOS detection is realized.
The boosting principle and the mirror image current collection principle of the invention are respectively as follows:
boosting principle: as shown in fig. 1, the voltage feedback pin FB of the EOC7003 main control chip is a feedback input pin, the reference voltage is 1.24v, the dac_vapd_mcu is connected with the boost control DAC pin of the micro control unit, and the resistor R2, the resistor R4 and the resistor R5 are connected in the manner shown in fig. 1 to form a boost circuit, which has the following specific relationship:
IR5=VFB/R5；
IR2=(VMIRIN-VFB)/R2；
IR4=IR5-IR2=(DAC_VAPD_MCU-VFB)/R4；
according to the three formulas, the relationship between DAC_VAPD_MCU and VMIRIN can be obtained as follows:
VMIRIN=R2*(VFB/R5+VFB/R4-DAC_VAPD_MCU/R4)+VFB。
thus, the VMRIN high voltage input to the EOC7003 main chip high voltage input pin MIRIN can be regulated by the output of the DAC_VAPD_MCU. According to the parameters set in FIG. 1, VMRIN can cover the APD bias operating range (16-34V) of the avalanche photodiode with an accuracy of 0.018V/LSB.
Mirror image current collection principle: the high voltage output pin MIROUT of the EOC7003 main control chip is high voltage output, and vmirout=vmiriin-1.7V. The first mirror current pin MIR1 and the second mirror current pin MIR2 of the EOC7003 master control chip do mirror current output of the current according TO the proportion of 1/5 and 1/2 respectively. The current mirrored by the first mirror current pin MIR1 is converted into voltage through a first resistor R9 which is grounded and is connected to the MCU to realize ADC sampling, and detection of RX Power is completed. The current mirrored by the second mirror current pin MIR2 is converted into a voltage through a second resistor R7 grounded and is compared with the other input signal dac_loslcvl_mcu of the hysteresis comparison circuit to output an LOS signal.
The RX Power detection and LOS detection of the present invention will be described in detail below with reference to fig. 1 by taking a 50G PON ONU as an example.
According to the ITU-T G9804.3 protocol, the receiving sensitivity of the 50G PON ONU N1/C+ gear is-24 dBm, the receiving overload optical Power is-3 dBm, the detection report of the Rx Power needs to cover at least the sensitivity to the overload area, and the LOS Power point needs to be smaller than the receiving sensitivity.
Sampling implementation of Rx Power detection: the responsivity (efficiency of converting optical power into photocurrent) of the 50G APD is generally about 4mW/mA, and thus, iapd=imirout+.15.9 uA corresponding to the sensitivity point and iapd=imirout+.2ma corresponding to the overload point can be seen. And because imir1=1/5×imirout, the sampling resistor r9=6.04 kohm, and because the adc_rxpower_mcu with sensitivity reaching the overload interval is 19.2mV to 2.42V, the sampling voltage range of the MCU ADC (the full scale range of the conventional MCU ADC reference voltage is 2.5V) is satisfied. Thus, the Rx Power detection function is effectively realized.
Implementation of LOS detection function: since there is no dedicated LA chip, the LOS detection function is realized by a hysteresis comparison circuit as shown in fig. 1. The DAC_LOSLVL_MCU is connected with a boost control DAC pin of the micro control unit MCU and is connected with a non-inverting input end of the hysteresis comparison circuit, so that LOS judgment threshold reference voltage is set, V_RXPower output from a second mirror current pin MIR2 of the EOC7003 main control chip is used as an input value to be compared with the input value, and RX_LOS_finger is connected to an electric interface output of the optical module.
According to the hysteresis comparison circuit design shown in fig. 1:
when uo= +uz=vcc 3V3;
Up=R10/(R10+R12)*DAC_LOSLVL_MCU+R12/(R10+R12)*Uz；
at the moment v_rxpower=un=up, the circuit is in a critical state, where v_rxpower is the threshold Uth, that is uth=r10/(r10+r12) ×dac_losvl_mcu+r12/(r10+r12) ×vcc3V3;
when uo= -uz=0;
Up=R10/(R10+R12)* DAC_LOSLVL_MCU +R12/(R10+R12)*Uz；
the same principle can be obtained:
Utl= R10/(R10+R12)* DAC_LOSLVL_MCU;
return difference voltage Δu=uth-Utl =r12/(r10+r12) ×vcc3V 3.
In the present invention, if the LOS interval is LOSD < -24.5dBm (i.e., 3.55 uW), LOSA > -40dBm (i.e., 0.1 uW). The photocurrent of the LOSD power point is about 14.2uA, i.e., iapd=imirout++14.2 uA, imirout=1/2×imirout=7.1 uA, where v_rxpower=imiro2×r7=141.9 mV, and Uth of the hysteresis comparator circuit is less than or equal to 141.9mV to ensure LOSD < -24.5 dBm.
According to the parameters shown in fig. 1, the received input optical power-26 dBm corresponds to v_rxpower≡100.5mV, and Uth corresponding to the hysteresis comparator is 140.0mV, and v_rxpower (141.9 mV) corresponding to the case of losd=24.5 dBm is close to Utl is 99.2mV. Thus the DAC_LOSLVL_MCU can be set to 100.5mV, if V_RXPower >140.0mV, then the RX_LOS_finger output is asserted low, informing the host that the signal is now restored; whereas if V_RXPower <99.2mV, then the RX_LOS_finger output is asserted high (VCC 3V 3), informing the host that the signal is lost at this time; the hysteresis interval is arranged between the two, so that the LOS detection function is effectively realized.
In summary, the invention can realize the RX Power detection and the LOS detection of the received light on the 50G PON ONU simultaneously by combining the prior main control chip with the boosting function and the two paths of mirror current output functions and the hysteresis comparison circuit, thereby effectively solving the technical problem that the RX Power detection and the LOS detection cannot be realized simultaneously without a special LA chip of the prior 50G PON ONU.
While the invention has been described with reference to certain embodiments, it is understood that any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.

Claims (7)

1. A detection circuit for detecting received signal strength and signal loss of an optical receiver, characterized by: the device comprises a micro control unit MCU, an avalanche photodiode APD, a hysteresis comparison circuit and a main control unit with a boosting function and a two-path mirror current output function;
the main control unit comprises a main control chip, a boost circuit, a first voltage conversion circuit and a second voltage conversion circuit, and the main control chip is provided with a high-voltage input pin, a high-voltage output pin, a voltage feedback pin, a first mirror current pin with 1/5 mirror proportion and a second mirror current pin with 1/2 mirror proportion;
the hysteresis comparison circuit is provided with a first voltage input end, a second voltage input end and a signal output end;
the micro control unit MCU comprises a comparison voltage output DAC pin, a boost control DAC pin and a mirror current receiving ADC pin;
the avalanche photodiode APD has a voltage input pin;
the voltage feedback pin of the main control chip is connected with the voltage input pin of the avalanche photodiode APD, the first mirror current pin of the main control chip is converted into voltage by the first voltage conversion circuit and then is connected with the mirror current receiving ADC pin of the micro control unit MCU, the second mirror current pin of the main control chip is converted into voltage by the second voltage conversion circuit and then is connected with the second voltage input end of the hysteresis comparison circuit, and the comparison voltage output DAC pin of the micro control unit MCU is connected with the first voltage input end of the hysteresis comparison circuit;
the micro control unit MCU detects the intensity of an optical signal through the conversion voltage received by the mirror current receiving ADC pins; the hysteresis comparison circuit detects loss of the optical signal through the voltage signals input by the first voltage input end and the second voltage input end, and outputs a detection result of the loss of the signal.
2. A detection circuit for detecting received signal strength and signal loss of an optical receiver as defined in claim 1, wherein: the first voltage conversion circuit comprises a first resistor, one end of which is grounded, and the other end of which is connected with a first mirror current pin.
3. A detection circuit for detecting received signal strength and signal loss of an optical receiver as defined in claim 1, wherein: the second voltage conversion circuit comprises a second resistor, one end of which is grounded, and the other end of which is connected with a second mirror current pin.
4. A detection circuit for detecting received signal strength and signal loss of an optical receiver as defined in claim 1, wherein: and a third resistor is arranged between the high-voltage output pin of the main control chip and the voltage input pin of the avalanche photodiode APD.
5. A detection circuit for detecting received signal strength and signal loss of an optical receiver as defined in claim 1, wherein: a fourth resistor and a fifth resistor are connected in series between a comparison voltage output DAC pin of the micro control unit MCU and a first voltage input end of the hysteresis comparison circuit, and a grounding capacitor is arranged between the fourth resistor and the fifth resistor.
6. A detection circuit for detecting received signal strength and signal loss of an optical receiver as defined in claim 1, wherein: and a grounding capacitor and a sixth resistor are sequentially arranged between the second mirror current pin of the main control chip and the second voltage input end of the hysteresis comparison circuit.
7. A detection circuit for detecting received signal strength and signal loss of an optical receiver as defined in claim 1, wherein: the signal output end of the hysteresis comparison circuit is also sequentially connected with a seventh pull-up resistor and an eighth resistor in series.
CN202310223214.4A 2023-03-09 2023-03-09 Detection circuit for detecting received signal strength and signal loss of optical receiver Pending CN116232449A (en)

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