CN116230810A - TOPCON solar cell slice, preparation method thereof and photovoltaic module - Google Patents
TOPCON solar cell slice, preparation method thereof and photovoltaic module Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 238000005520 cutting process Methods 0.000 claims abstract description 52
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 239000011265 semifinished product Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 46
- 238000005498 polishing Methods 0.000 claims description 31
- 238000003698 laser cutting Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 238000003486 chemical etching Methods 0.000 claims description 18
- 238000010329 laser etching Methods 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000003513 alkali Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 27
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- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
The invention provides a TOPCON solar cell slice, a preparation method thereof and a photovoltaic module, and belongs to the technical field of half-piece photovoltaic modules. According to the preparation method, windows are preset in the pn junction and the passivation contact structure through a pre-cutting process, so that the edge of the obtained battery slice is contracted inwards, carrier recombination is effectively reduced, efficiency loss is reduced, and the photoelectric conversion efficiency of the battery slice and the half-slice photovoltaic module is improved.
Description
Technical Field
The invention belongs to the technical field of TOPCON solar cells, and particularly relates to a TOPCON solar cell slice, a preparation method thereof and a photovoltaic module.
Background
TOPCon cells, namely tunneling oxide passivation contact solar cells, are an N-type silicon wafer cell technology proposed in 2013, and aim to improve solar cell efficiency by solving the problem of selective passivation contact of cell carriers. The front surface of the TOPCON battery has the same structure as a conventional N-type solar battery, and is mainly distinguished in that a tunneling oxide layer (intrinsic amorphous silicon or silicon dioxide) is prepared on the back surface of the battery, and then a doped amorphous silicon or doped polycrystalline silicon thin layer is deposited, so that a passivation contact structure is formed together, and the surface recombination of a current carrier and the metal contact recombination are effectively reduced.
The half-sheet photovoltaic module is a battery module obtained by cutting a standard-specification battery sheet into two identical battery slices along the direction perpendicular to a battery main grid line by using a laser cutting method and then welding the two battery slices in series. Compared with the whole cell, the half-cell photovoltaic module has higher power density and lower power consumption, so that the half-cell photovoltaic module technology becomes the pursuing direction of the solar cell industry. If TOPCon solar cells are combined with half-sheet photovoltaic module technology, higher power solar cell modules can be obtained.
However, carriers at the edges of the cell slices are easily recombined, and the photoelectric conversion efficiency of the cell slices is reduced. In addition, although the cell is generally cut in a nondestructive manner by using a nondestructive laser cutting technique, in practice, even if the cell is cut in a nondestructive manner, a certain damage is brought to the cut surface, so that the photoelectric conversion efficiency of the obtained cell is lost by 0.1-0.3%. Therefore, further researches are needed to design a TOPCO solar cell slice, a preparation method thereof and a photovoltaic module, and the photoelectric conversion efficiency of the TOPCO solar cell slice and a half photovoltaic module is improved.
Disclosure of Invention
The present invention has been made based on the findings and knowledge of the inventors regarding the following facts and problems: the carriers at the edges of the battery slices in the related art are easily recombined, and the photoelectric conversion efficiency of the battery slices is reduced. In addition, although the cell slice is subjected to nondestructive cutting by adopting a nondestructive laser cutting technology, certain damage is still brought to a cutting surface, and the photoelectric conversion efficiency of the obtained cell slice is lost by 0.1-0.3%. Therefore, further researches are needed to design a TOPCon solar cell slice and a preparation method thereof for improving the photoelectric conversion efficiency of the cell slice and half-slice photovoltaic modules.
The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, the embodiment of the invention provides a TOPCON solar cell slice and a preparation method thereof.
The embodiment of the invention provides a preparation method of TOPCON solar cell slices, which comprises the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate;
(2) Preparing a pn junction on the silicon wafer substrate and back polishing;
(3) Preparing a first film on the back surface of the silicon wafer substrate, wherein the first film adopts intrinsic amorphous silicon or oxide;
(4) Preparing a second film on the surface of the first film, wherein the second film adopts doped amorphous silicon or doped polycrystalline silicon to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at the left and right d sides of the cutting central axis 1 The pn junction is removed within the width range to form 2d 1 A first front window of width; and/or d is arranged at the front edge of the semi-finished product of the battery piece 2 The pn junction is removed within the width range to form d 2 A second front window of width;
(6) The back of the semi-finished product of the battery piece is positioned at the left and right d of the cutting central axis 3 The second film is removed within the width range to form 2d 3 A first backside window of width; and/or d is arranged at the back edge of the semi-finished product of the battery piece 4 Removing the second film in the width range to form d 4 A second backside window of width;
(7) Performing laser cutting on the battery slice semi-finished product along a cutting central axis to obtain a battery slice semi-finished product;
(8) And preparing metal electrodes on the front and back surfaces of the battery slice semi-finished product respectively to obtain a battery slice.
The TOPCON solar cell slice preparation method provided by the embodiment of the invention has the following advantages and technical effects:
(1) According to the preparation method provided by the embodiment of the invention, the first front window and/or the first back window are/is preset at the laser cutting position, so that the original pn junction and/or the second film at the position can be removed, the reduction of the photoelectric conversion efficiency of the battery slice caused by damage in the subsequent laser cutting process can be prevented, fragments generated in the subsequent laser cutting process can be avoided, and the leakage phenomenon caused by direct current flowing from the edge of the battery slice through the fragments can be prevented; the pn junction and/or the second film at the edge of the obtained battery slice is shrunk, so that the situation of carrier recombination at the edge of the battery slice is greatly reduced, and the photoelectric conversion efficiency of the battery slice is improved;
(2) According to the preparation method provided by the embodiment of the invention, the second front window and/or the second back window are preset at the edge of the battery slice, so that the original pn junction and/or the second film at the position can be removed, the obtained pn junction and/or the second film at the edge of the battery slice is retracted, the situation of carrier recombination at the edge of the battery slice is greatly reduced, and the photoelectric conversion efficiency of the battery slice is improved.
In some embodiments, in step (5), d 1 And/or d 2 More than 0 and less than or equal to 1cm.
In some embodiments, in step (5), the method employed to provide the first front side window and/or the second front side window includes laser etching, screen printing, photolithography, or chemical etching.
In some embodiments, in step (6), d 3 And/or d 4 More than 0 and less than or equal to 1cm.
In some embodiments, in step (6), the method employed to provide the first backside window and/or the second backside window includes laser etching, screen printing, photolithography, or chemical etching.
In some embodiments, in step (6), a method adopted to provide the first back surface window and/or the second back surface window is a chemical etching method, where the chemical etching method includes acid polishing or alkali polishing.
In some embodiments, in step (8), a passivation layer comprising oxide and/or silicon nitride is prepared on the front and/or back side of the cell slice semi-finished product prior to preparing the metal electrode.
In some embodiments, in step (8), the passivation layer has a thickness greater than 0 and less than or equal to 200nm.
The embodiment of the invention also provides a TOPCO solar cell slice, which is prepared by the preparation method of the TOPCO solar cell slice.
The TOPCon solar cell slice provided by the embodiment of the invention has the following advantages and technical effects:
compared with TOPCO solar cell slices obtained by directly cutting TOPCO solar cell slices by laser in the related art, the TOPCO solar cell slices of the embodiment of the invention have higher photoelectric conversion efficiency.
The embodiment of the invention also provides a TOPCO solar photovoltaic module, which comprises the TOPCO solar cell slice of the embodiment of the invention.
The TOPCon solar cell slice provided by the embodiment of the invention has the following advantages and technical effects:
compared with a TOPCO solar photovoltaic module obtained by directly cutting TOPCO solar cells by laser in the related art, the TOPCO solar photovoltaic module provided by the embodiment of the invention has higher photoelectric conversion efficiency.
Drawings
Fig. 1 is a schematic flow chart of a method for producing a solar cell slice according to embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a TOPCon solar cell slice according to embodiment 1 of the present invention;
fig. 3 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to embodiment 2 of the present invention;
fig. 4 is a schematic structural diagram of a TOPCon solar cell slice according to embodiment 2 of the present invention;
fig. 5 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to embodiment 3 of the present invention;
fig. 6 is a schematic structural diagram of a TOPCon solar cell slice according to embodiment 3 of the present invention;
fig. 7 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to example 4 of the present invention;
fig. 8 is a schematic structural diagram of a TOPCon solar cell slice according to embodiment 4 of the present invention;
fig. 9 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to example 5 of the present invention;
fig. 10 is a schematic view of the structure of a TOPCon solar cell slice according to embodiment 5 of the present invention;
fig. 11 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to example 6 of the present invention;
fig. 12 is a schematic structural diagram of a TOPCon solar cell slice according to embodiment 6 of the present invention;
fig. 13 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to example 7 of the present invention;
fig. 14 is a schematic view of the structure of a TOPCon solar cell slice according to embodiment 7 of the present invention;
fig. 15 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to example 8 of the present invention;
fig. 16 is a schematic view of the structure of a TOPCon solar cell slice according to embodiment 8 of the present invention;
fig. 17 is a schematic flow chart of a method for preparing TOPCon solar cell slices according to embodiment 9 of the present invention;
fig. 18 is a schematic view of the structure of a TOPCon solar cell slice according to embodiment 9 of the present invention;
reference numerals illustrate:
1-a silicon wafer substrate; a 2-pn junction; 3-a first film; 4-a second film; 5-a first front window; 6-a second front window; 7-a first backside window; 8-a second backside window; 9-a metal electrode; 10-passivation layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
The embodiment of the invention provides a preparation method of TOPCON solar cell slices, which is shown in figures 1-18 and comprises the following steps:
(1) Carrying out texturing cleaning on the silicon wafer substrate 1;
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 and back polishing;
(3) Preparing a first film 3 on the back surface of a silicon wafer substrate 1, wherein the first film 3 adopts intrinsic amorphous silicon or oxide;
(4) Preparing a second film 4 on the surface of the first film 3, wherein the second film 4 adopts doped amorphous silicon or doped polycrystalline silicon to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at the left and right d sides of the cutting central axis 1 The pn junction 2 is removed within the width range to form 2d 1 A first front window 5 of width; and/or d is arranged at the front edge of the semi-finished product of the battery piece 2 The pn-junction 2 is removed over the width to form d 2 A second front window 6 of width;
(6) The back of the semi-finished product of the battery piece is positioned at the left and right d sides of the cutting central axis 3 The second film 4 in the width range is removed to form 2d 3 A first rear window 7 of width; and/or d is arranged at the back edge of the semi-finished product of the battery piece 4 The second film 4 is removed in the width range to form d 4 A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) And preparing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice respectively to obtain the battery slice.
Working principle: according to the preparation method provided by the embodiment of the invention, the first front window and/or the first back window are/is preset at the laser cutting position, so that the original pn junction and/or the second film at the position can be removed, the damage to the battery slice in the subsequent laser cutting process can be reduced, the reduction of the photoelectric conversion efficiency of the battery slice can be improved, fragments generated in the subsequent laser cutting process can be avoided, the electric leakage phenomenon caused by the fact that current passes through the fragments and directly flows from the edge of the battery slice is prevented, meanwhile, the situation of carrier recombination at the edge of the battery slice is greatly reduced because the pn junction and/or the second film at the edge of the battery slice is contracted, and the photoelectric conversion efficiency of the battery slice is also improved; the second front window and/or the second back window are/is preset at the edge of the battery slice, so that the original pn junction and/or the second film at the position can be removed, the obtained pn junction and/or the second film at the edge of the battery slice is retracted, the situation of carrier recombination at the edge of the battery slice is greatly reduced, and the photoelectric conversion efficiency of the battery slice is improved. The order of step (5) and step (6) may be exchanged.
The first film 3 adopts intrinsic amorphous silicon or oxide, the second film 4 adopts doped amorphous silicon or doped polycrystalline silicon, and the passivation contact structure is formed on the back of the battery piece by the first film 3 and the second film 4, so that the surface recombination of carriers and the metal contact recombination are effectively reduced.
In some embodiments, in step (3), the oxide may include silicon oxide (SiO x ，0<x is less than or equal to 2), aluminum oxide and titanium oxide.
In some embodiments, in step (3), the thickness of the first film 3 is greater than 0 and less than or equal to 5nm, such as 0.5nm, 1nm, 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, 4.5nm, 5nm, etc.
In some embodiments, in step (4), the thickness of the second film 4 is greater than 0 and less than or equal to 500nm, such as 1nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, etc.
In some embodiments, in step (5), d 1 Greater than 0 and equal to or less than 1cm, for example, 0.1cm, 0.2cm, 0.3cm, 0.4cm, 0.5cm, 0.6cm, 0.7cm, 0.8cm, 0.9cm, 1cm, etc., preferably 0.2 to 1cm. When d 1 When the size is too large, the formation of pn junction is easy to influence, which is not beneficial to reducing the carrier surface recombination and the metal contact recombination, and further is not beneficial to improving the photoelectric conversion efficiency of TOPCon solar cell slices; when d 1 If the amount is too small, the leakage effect is not easily reduced.
In some embodiments, in step (5), the method used to provide the first front side window 5 includes laser etching, screen printing, photolithography, or chemical etching. Compared with the laser cutting in the subsequent step (7), the method has the advantages that the damage to the cutting surface of the battery piece is greatly reduced by the aid of the method, and other normal battery process steps are carried out after the pre-cutting is finished, so that the damage to the cutting interface in the laser cutting process in the subsequent step (7) can be greatly reduced.
In some embodiments, in step (5), d 2 Greater than 0 and equal to or less than 1cm, for example, 0.1cm, 0.2cm, 0.3cm, 0.4cm, 0.5cm, 0.6cm, 0.7cm, 0.8cm, 0.9cm, 1cm, etc., preferably 0.2 to 1cm. When d 2 When the size is too large, the formation of pn junction is easy to influence, which is not beneficial to reducing the carrier surface recombination and the metal contact recombination, and further is not beneficial to improving the photoelectric conversion efficiency of TOPCon solar cell slices; when d 2 If the amount is too small, the leakage effect is not easily reduced.
In some embodiments, in step (5), the method used to provide the second front side window 6 includes laser etching, screen printing, photolithography, or chemical etching. The research of the invention shows that the shrinkage of the pn junction edge at the edge part of the battery slice is helpful to reduce the parallel resistance and improve the Filling Factor (FF) of the battery.
The above-listed pre-cutting processes are mild, compared with the influence of shrinkage of the pn junction edge of the battery slice on the photoelectric conversion efficiency, the damage of the etching processes to the edge of the battery slice is almost negligible, and the second front window is arranged on the whole, so that the power loss of the battery slice can be obviously reduced, and the photoelectric conversion efficiency of the obtained TOPCO solar battery slice is improved.
Preferably, in some embodiments, the method used to provide the second front window 6 is a chemical etching method. Because the chemical etching method can prepare the second front window and simultaneously remove the plating around which may be generated on the front surface of the battery piece. Specifically, the chemical etching method may include acid polishing or alkali polishing.
In some embodiments, in step (6), d 3 Greater than 0 and less than or equal to 1cm, for example 0.1cm, 0.2cm, 0.3cm, 0.4cm, 0.5cm, 0.6cm, 0.7cm, 0.8cm, 0.9cm, 1cm, etc., preferably 0.2-1cm. When d 3 When the size is too large, the formation of a passivation contact structure is easy to influence, the surface recombination of carriers and the metal contact recombination are not facilitated to be reduced, and further the photoelectric conversion efficiency of the TOPCON solar cell slice is not facilitated to be improved; when d 3 If the amount is too small, the leakage effect is not easily reduced.
In some embodiments, in step (6), the method used to provide the first back surface window 7 includes laser etching, screen printing, photolithography, or chemical etching. Compared with the laser cutting in the subsequent step (7), the method has the advantages that the damage to the cutting surface of the battery piece is greatly reduced by the aid of the method, and other normal battery process steps are carried out after the pre-cutting is finished, so that the damage to the cutting interface in the laser cutting process in the subsequent step (7) can be greatly reduced.
In some embodiments, in step (6), d 4 Greater than 0 and equal to or less than 1cm, for example, 0.1cm, 0.2cm, 0.3cm, 0.4cm, 0.5cm, 0.6cm, 0.7cm, 0.8cm, 0.9cm, 1cm, etc., preferably 0.2 to 1cm. When d 4 When the size is too large, the formation of a passivation contact structure is easy to influence, the surface recombination of carriers and the metal contact recombination are not facilitated to be reduced, and further the photoelectric conversion efficiency of the TOPCON solar cell slice is not facilitated to be improved; when d 4 If the amount is too small, the leakage effect is not easily reduced.
In some embodiments, in step (6), the method used to provide the second backside window 8 includes laser etching, screen printing, photolithography, or chemical etching. The research of the invention shows that the shrinkage of the edge of the second film at the edge part of the battery slice is helpful to reduce the parallel resistance and improve the Filling Factor (FF) of the battery. The above-listed pre-cutting processes are mild, compared with the influence of shrinkage of the edge of the second film of the battery slice on the photoelectric conversion efficiency, the damage of the etching processes to the edge of the battery slice is almost negligible, and the second back window is arranged in the whole, so that the power loss of the battery slice can be obviously reduced, and the photoelectric conversion efficiency of the obtained TOPCO solar battery slice is improved.
Preferably, in some embodiments, the method used to provide the second backside window 8 is a chemical etching method. Because the chemical etching method can prepare the second back window and remove the plating around the back of the battery piece. Specifically, the chemical etching method may include acid polishing or alkali polishing.
The cross-sectional shapes of the first front surface window 5, the second front surface window 6, the first back surface window 7, and the second back surface window 8 are not particularly limited, and may be rectangular, square, semi-elliptical, semicircular, or the like, for example.
In some embodiments, in step (8), a passivation layer 10 is prepared on the front and/or back side of the cell slice semi-finished product prior to preparing the metal electrode 9. The passivation layer 10 includes oxide and/or silicon nitride, and the oxide may further include at least one of silicon oxide (SiOx, 0< x.ltoreq.2), titanium oxide, and aluminum oxide. The passivation layer 10 may be a single layer or two or more layers. The passivation layers on the front and back sides of the battery cell may be the same or different materials.
In some embodiments, the passivation layer 10 on the back of the battery sheet has a thickness greater than 0 and equal to or less than 200nm, such as 10nm, 20nm, 50nm, 80nm, 100nm, 120nm, 150nm, 170nm, 200nm, etc., preferably 2-200nm. When the thickness of the passivation layer is too small, the repair of the small damage of the window to the battery piece is not facilitated. When the thickness of the passivation layer is too large, the improvement effect on the repairing effect is not obvious, but the production cost is increased, and the cost reduction and the synergy are not facilitated. The passivation layers on the front and back sides of the battery cell may be the same or different in thickness.
In addition, the embodiment of the invention also provides a TOPCon solar cell slice, which is prepared by the preparation method of the TOPCon solar cell slice.
The embodiment of the invention also provides a TOPCO solar photovoltaic module, which comprises the TOPCO solar cell slice of the embodiment of the invention.
The present invention will be described in detail with reference to the following examples and drawings.
Example 1
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in figures 1-2, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.4cm (2 d 1 ) A first front window 5 of width;
(6) The back of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting an alkali polishing mode 3 ) The second film 4 is removed over the width to form a film of 0.4cm (2 d 3 ) A first rear window 7 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) Metal electrodes 9 are deposited on the front and back surfaces of the semi-finished battery slice, respectively, to obtain a battery slice as shown in fig. 1.
Example 2
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in figures 3-4, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.4cm (2 d 1 ) A first front window 5 of width;
(6) The back edge of the semi-finished product of the battery piece is 0.2cm (d) 4 ) The second film 4 was removed over the width to form a film of 0.2cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) Metal electrodes 9 are deposited on the front and back surfaces of the semi-finished battery slice, respectively, to obtain a battery slice as shown in fig. 2.
Example 3
The embodiment provides a preparation method of TOPCon solar cell slices, which is shown in fig. 5-6 and comprises the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.4cm (2 d 1 ) A first front window 5 of width;
(6) The back of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting an alkali polishing mode 3 ) The second film 4 is removed over the width to form a film of 0.4cm (2 d 3 ) A first back window 7 of width, while holding the battery sheet semi-finished product at 0.2cm (d 4 ) The second film 4 was removed over the width to form a film of 0.2cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 4
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in fig. 7-8, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) Laser etching method is adopted to etch the front edge of the semi-finished product of the battery piece by 0.2cm (d 2 ) The pn-junction 2 is removed over the width to form a junction of 0.2cm (d 2 ) A second front window 6 of width;
(6) The back of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting an alkali polishing mode 3 ) The second film 4 is removed over the width to form a film of 0.4cm (2 d 3 ) A first rear window 7 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 5
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in fig. 9-10, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) Laser etching method is adopted to etch the front edge of the semi-finished product of the battery piece by 0.2cm (d 2 ) The pn-junction 2 is removed over the width to form a junction of 0.2cm (d 2 ) A second front window 6 of width;
(6) The back edge of the semi-finished product of the battery piece is 0.2cm (d) 4 ) The second film 4 was removed over the width to form a film of 0.2cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 6
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in fig. 11-12, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front edge of the semi-finished product of the battery piece is 0.2cm (d) 2 ) The pn-junction 2 is removed over the width to form a junction of 0.2cm (d 2 ) A second front window 6 of width;
(6) The back of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting an alkali polishing mode 3 ) The second film 4 is removed over the width to form a film of 0.4cm (2 d 3 ) A first back window 7 of width, while holding the battery sheet semi-finished product at 0.2cm (d 4 ) The second film 4 was removed over the width to form a film of 0.2cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 7
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in fig. 13-14, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.4cm (2 d 1 ) A first front window 5 of width, while holding the battery sheet semi-finished product at 0.2cm (d 2 ) The pn-junction 2 is removed over the width to form a junction of 0.2cm (d 2 ) A second front window 6 of width;
(6) The back of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting an alkali polishing mode 3 ) The second film 4 is removed over the width to form a film of 0.4cm (2 d 3 ) A first rear window 7 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 8
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in fig. 15-16, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.4cm (2 d 1 ) A first front window 5 of width, while holding the battery sheet semi-finished product at 0.2cm (d 2 ) The pn-junction 2 is removed over the width to form a junction of 0.2cm (d 2 ) A second front window 6 of width;
(6) The back edge of the semi-finished product of the battery piece is 0.2cm (d) 4 ) The second film 4 was removed over the width to form a film of 0.2cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 9
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in figures 17-18, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.4cm (2 d 1 ) A first front window 5 of width, whileThe front edge of the semi-finished product of the battery piece is 0.2cm (d 2 ) The pn-junction 2 is removed over the width to form a junction of 0.2cm (d 2 ) A second front window 6 of width;
(6) The back of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting an alkali polishing mode 3 ) The second film 4 is removed over the width to form a film of 0.4cm (2 d 3 ) A first back window 7 of width, while holding the battery sheet semi-finished product at 0.2cm (d 4 ) The second film 4 was removed over the width to form a film of 0.2cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 10
The embodiment provides a preparation method of TOPCon solar cell slices, as shown in figures 17-18, comprising the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((p) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((p) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (n) poly-Si with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.4cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.8cm (2 d 1 ) A first front window 5 of width, while holding the battery sheet semi-finished product at 0.4cm (d 2 ) The pn-junction 2 is removed over the width to form a junction of 0.4cm (d 2 ) Second positive of widthA face window 6;
(6) Using HF and HNO 3 The back of the semi-finished product of the battery piece is positioned at about 0.4cm (d) of the central axis of the cutting in the acid polishing mode of the mixed acid liquid 3 ) The second film 4 is removed over the width to form a film of 0.8cm (2 d 3 ) A first back window 7 of width, while holding the battery sheet semi-finished product at 0.4cm (d 4 ) The second film 4 was removed over the width to form a film of 0.4cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(9) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Example 11
The embodiment provides a preparation method of TOPCON solar cell slices, which comprises the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at about 0.2cm (d) of the central axis of the cutting by adopting a laser etching method 1 ) The pn junction 2 is removed in the width range to form 0.4cm (2 d 1 ) A first front window 5 of width, while holding the battery sheet semi-finished product at 0.2cm (d 2 ) The pn-junction 2 is removed over the width to form a junction of 0.2cm (d 2 ) A second front window 6 of width;
(6) The back of the semi-finished product of the battery piece is positioned at the central axis of cutting by adopting an alkali polishing modeAbout 0.2cm (d) 3 ) The second film 4 is removed over the width to form a film of 0.4cm (2 d 3 ) A first back window 7 of width, while holding the battery sheet semi-finished product at 0.2cm (d 4 ) The second film 4 was removed over the width to form a film of 0.2cm (d 4 ) A second backside window 8 of width;
(7) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(8) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
Comparative example 1
The comparative example provides a preparation method of TOPCON solar cell slices, which comprises the following steps:
(1) Performing texturing cleaning on a silicon wafer substrate 1 ((n) Si);
(2) Preparing a pn junction 2 on a silicon wafer substrate 1 ((n) Si) and back polishing;
(3) On the back surface of the silicon wafer substrate 1, silicon oxide (SiO) having a thickness of 4nm was deposited x ) As the first film 3;
(4) Depositing doped polysilicon (p) with the thickness of 40nm on the surface of the first film 3 as a second film 4 to obtain a semi-finished product of the battery piece;
(5) Performing laser cutting on the semi-finished product of the battery slice along the cutting central axis to obtain the semi-finished product of the battery slice;
(6) Depositing 80nm silicon nitride (Si) on the front and back surfaces of the semi-finished product of the cell slice 3 N 4 ) As a passivation layer 10;
(7) And respectively depositing metal electrodes 9 on the front and back surfaces of the semi-finished product of the battery slice to obtain the battery slice.
The studies of examples 1-11 show that in the edge carrier recombination of the cell slices, the recombination of the pn junction region dominates the overall efficiency loss, which is greatly reduced by the laser cut when the pn junction region does not extend to the cut edge. Meanwhile, the carrier recombination in the edge area of the polycrystalline silicon also brings about efficiency loss, and when the polycrystalline silicon of the battery slice is contracted inwards at the edge, the efficiency loss is also obviously reduced.
From the comparison of examples 1 to 10 and comparative example 1 above, the photoelectric conversion efficiency of the TOPCON solar cell slices obtained by the preparation methods of examples 1 to 10 of the present invention was significantly higher than that of comparative example 1.
From the above examples 1-9, the photoelectric conversion efficiency of the TOPCon solar cell slices obtained by the preparation method of example 9 of the present invention is higher than that of examples 1-8, which means that the photoelectric conversion efficiency can be more effectively improved by simultaneously providing the first front window, the second front window, the first back window and the second back window in example 9.
From the comparison between the above examples 9 and 11, the passivation layer can effectively repair the micro damage caused by the pre-cutting process, and further improve the photoelectric conversion efficiency of the battery slice.
For purposes of this disclosure, the terms "one embodiment," "some embodiments," "example," "a particular example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (10)
1. The preparation method of the TOPCON solar cell slice is characterized by comprising the following steps of:
(1) Performing texturing cleaning on a silicon wafer substrate;
(2) Preparing a pn junction on the silicon wafer substrate and back polishing;
(3) Preparing a first film on the back surface of the silicon wafer substrate, wherein the first film adopts intrinsic amorphous silicon or oxide;
(4) Preparing a second film on the surface of the first film, wherein the second film adopts doped amorphous silicon or doped polycrystalline silicon to obtain a semi-finished product of the battery piece;
(5) The front surface of the semi-finished product of the battery piece is positioned at the left and right d sides of the cutting central axis 1 The pn junction is removed within the width range to form 2d 1 A first front window of width; and/or d is arranged at the front edge of the semi-finished product of the battery piece 2 The pn junction is removed within the width range to form d 2 A second front window of width;
(6) The back of the semi-finished product of the battery piece is positioned at the left and right d of the cutting central axis 3 The second film is removed within the width range to form 2d 3 A first backside window of width; and/or d is arranged at the back edge of the semi-finished product of the battery piece 4 Removing the second film in the width range to form d 4 A second backside window of width;
(7) Performing laser cutting on the battery slice semi-finished product along a cutting central axis to obtain a battery slice semi-finished product;
(8) And preparing metal electrodes on the front and back surfaces of the battery slice semi-finished product respectively to obtain a battery slice.
2. The method of producing TOPCon solar cell slices according to claim 1, wherein in step (5), d 1 And/or d 2 More than 0 and less than or equal to 1cm.
3. The method for preparing a TOPCon solar cell slice according to claim 1 or 2, wherein in step (5), the method adopted for disposing the first front-side window and/or the second front-side window comprises laser etching, screen printing, photolithography or chemical etching.
4. The method of preparing TOPCon solar cell slices according to claim 1, wherein in step (6), d 3 And/or d 4 More than 0 and less than or equal to 1cm.
5. The method for preparing a TOPCon solar cell slice according to claim 1 or 4, wherein in step (6), the method for providing the first back surface window and/or the second back surface window comprises laser etching, screen printing, photolithography or chemical etching.
6. The method for preparing the TOPCon solar cell slice according to claim 5, wherein in the step (6), a chemical etching method is adopted to set the first back window and/or the second back window, and the chemical etching method comprises acid polishing or alkali polishing.
7. The method for producing TOPCon solar cell slices according to claim 1 or 4, characterized in that in step (8) a passivation layer is produced on the front and/or back side of the cell slice semi-finished product, comprising oxide and/or silicon nitride, before producing the metal electrode.
8. The method for producing TOPCon solar cell slices according to claim 7, wherein in the step (8), the thickness of the passivation layer is greater than 0 and equal to or less than 200nm.
9. TOPCon solar cell slice, characterized in that it is prepared by the method for preparing a TOPCon solar cell slice according to any one of claims 1-8.
10. TOPCon solar photovoltaic module, characterized by comprising a TOPCon solar cell slice according to claim 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116885044A (en) * | 2023-08-01 | 2023-10-13 | 江苏润阳光伏科技有限公司 | Preparation method for effectively improving TOPCON battery assembly power |
| CN116936686A (en) * | 2023-09-15 | 2023-10-24 | 晶科能源(海宁)有限公司 | Photovoltaic module manufacturing method and photovoltaic module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012162901A1 (en) * | 2011-05-27 | 2012-12-06 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing back contact crystalline silicon solar cell sheet |
| CN111446308A (en) * | 2020-05-09 | 2020-07-24 | 天合光能股份有限公司 | Solar cell and laser slicing method |
| CN213635996U (en) * | 2020-12-10 | 2021-07-06 | 常州时创能源股份有限公司 | Solar cell capable of reducing cutting loss |
| CN113964223A (en) * | 2021-10-15 | 2022-01-21 | 浙江大学 | Crystalline silicon solar cell piece for inhibiting electric leakage of cut edge, cell module and preparation method |
-
2023
- 2023-04-26 CN CN202310460097.3A patent/CN116230810B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012162901A1 (en) * | 2011-05-27 | 2012-12-06 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing back contact crystalline silicon solar cell sheet |
| CN111446308A (en) * | 2020-05-09 | 2020-07-24 | 天合光能股份有限公司 | Solar cell and laser slicing method |
| CN213635996U (en) * | 2020-12-10 | 2021-07-06 | 常州时创能源股份有限公司 | Solar cell capable of reducing cutting loss |
| CN113964223A (en) * | 2021-10-15 | 2022-01-21 | 浙江大学 | Crystalline silicon solar cell piece for inhibiting electric leakage of cut edge, cell module and preparation method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116885044A (en) * | 2023-08-01 | 2023-10-13 | 江苏润阳光伏科技有限公司 | Preparation method for effectively improving TOPCON battery assembly power |
| CN116885044B (en) * | 2023-08-01 | 2024-04-19 | 江苏润阳光伏科技有限公司 | Preparation method for effectively improving TOPCon battery assembly power |
| CN116936686A (en) * | 2023-09-15 | 2023-10-24 | 晶科能源(海宁)有限公司 | Photovoltaic module manufacturing method and photovoltaic module |
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