CN116224713A - Nanometer impression template and method for facilitating nanometer impression demoulding - Google Patents
Nanometer impression template and method for facilitating nanometer impression demoulding Download PDFInfo
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- CN116224713A CN116224713A CN202310277233.5A CN202310277233A CN116224713A CN 116224713 A CN116224713 A CN 116224713A CN 202310277233 A CN202310277233 A CN 202310277233A CN 116224713 A CN116224713 A CN 116224713A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Abstract
The invention discloses a nano-imprinting template and a method for facilitating nano-imprinting demolding. The method for facilitating nanoimprint demolding comprises the following steps: providing a template body, wherein a micro-nano structure is formed on the template body; depositing a dielectric material on the micro-nano structure to form a dielectric film conformally covering the micro-nano structure; performing surface treatment on the dielectric film by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film; reacting a fluorine-containing compound with the oxygen radicals to form a fluorine-containing compound layer on the surface of the dielectric thin film. The invention deposits uniform medium film and fluorine-containing compound on the nano-imprint fine structure, namely forms stable and uniform oxygen free radical on the medium film, and adopts the fluorine-containing compound to modify the surface of the structure, thereby reducing the free energy of the surface and improving the demolding yield.
Description
Technical Field
The invention belongs to the technical field of micro-nano processing, and particularly relates to a nano-imprinting template and a method for facilitating nano-imprinting demolding.
Background
Currently, microelectronic processing technology has entered the nanoera, and with further abbreviations for feature size, next generation lithography technology is urgently needed to address. The nanoimprint technology is very likely to become the next generation lithography technology because it has the advantages of simple process, low cost, and high efficiency. Because it is based on the physical deformation copy pattern, it is not influenced by factors such as optical diffraction, etc., it has higher resolution, can process the pattern of 5 nanometers.
For nanoimprint in the micro-nano level field with high aspect ratio, the force between the template and the substrate which is required to be overcome during demolding is large, and particularly when the nanostructure is more tiny and dense, demolding is difficult, and the demolding yield is low.
Disclosure of Invention
The invention mainly aims to provide a nano-imprinting template and a method for facilitating nano-imprinting demolding, so as to overcome the defects in the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the invention provides a nano-imprinting template, which comprises the following components:
the template comprises a template body, wherein a micro-nano structure is formed on the template body;
the medium film conformally covers the micro-nano structure;
and the fluorine-containing compound layer is uniformly combined with the surface of the dielectric film.
Further, the aspect ratio of the micro-nano structure is 1:0.01-1:10.
Further, the thickness of the dielectric film is 0.3-20nm.
Further, the dielectric film is made of silicon oxide, aluminum oxide, silicon nitride or the like or a mixed film layer of two or more of the silicon oxide, the aluminum oxide, the silicon nitride and the like.
Further, the fluorine-containing compound in the fluorine-containing compound layer is covalently bonded to the surface of the dielectric film.
The invention also provides a method for facilitating nanoimprint demolding, which comprises the following steps:
providing a template body, wherein a micro-nano structure is formed on the template body;
depositing a dielectric material on the micro-nano structure to form a dielectric film conformally covering the micro-nano structure;
performing surface treatment on the dielectric film by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film;
and (3) chemically reacting the fluorine-containing compound with the oxygen free radical forming surface single molecule self-assembly, so as to form a fluorine-containing compound layer on the surface of the medium film.
Further, the dielectric material is deposited on the micro-nano structure by adopting a deposition mode with high step coverage rate, so that the dielectric film is formed.
Further, the deposition mode with high step coverage includes Atomic Layer (ALD) deposition.
Further, uniformly depositing a fluorine-containing compound on the surface of the dielectric film with oxygen free radicals on the surface at least through physical vapor deposition or monolayer surface self-assembly mode to form the fluorine-containing compound layer.
Compared with the prior art, the invention has the following beneficial effects:
(1) The invention deposits uniform medium film and fluorine-containing compound on the nano-imprint fine structure, namely forms stable and uniform oxygen free radical on the medium film, and adopts the fluorine-containing compound to modify the surface of the structure, thereby reducing the free energy of the surface and improving the demolding yield.
(2) The method has universal applicability to various imprinting template materials such as polymers, metals and the like, and the formed low-surface-energy modified film has good coverage on nano patterns with even high aspect ratio, so that good demolding of patterns such as deep holes and the like is ensured; in addition, the thickness of the modified film can be reduced to below 1 nanometer, the uniformity of the thickness of the film layer at each part of the deep hole is high, the influence on the size of the nano stamping plate is small, and the size accuracy control of the stamped nano pattern is facilitated.
(3) According to the method, a layer of dielectric film can be deposited on the surface of templates made of different materials, in addition, the dielectric film is deposited by a spin-on atomic layer deposition method, the thickness of the film at each part of the nano structure with high depth-to-width ratio is uniform and controllable, even the film with low thickness is uniform and controllable, the influence of the film with low thickness on the size of the nano structure is small, and the accuracy control on the nano structure is higher.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a structure for depositing a dielectric film on a template body in one embodiment of the present application.
Fig. 2 is a schematic illustration of forming a fluoropolymer layer in an embodiment of the present application.
Reference numerals illustrate: 1. the template comprises a template body, 11 micro-nano structures, 2 dielectric films, 3 and fluorine-containing compounds.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical scheme, the implementation process, the principle and the like are further explained as follows.
One aspect of an embodiment of the present invention provides a nanoimprint template, including:
the template comprises a template body, wherein a micro-nano structure is formed on the template body;
the medium film conformally covers the micro-nano structure;
and the fluorine-containing compound layer is uniformly combined with the surface of the dielectric film.
In some preferred embodiments, the micro-nanostructures have an aspect ratio of 1:0.01 to 1:10.
In some preferred embodiments, the dielectric film has a thickness of 0.3-20nm.
In some preferred embodiments, the material of the dielectric thin film includes any one or more of silicon oxide, aluminum oxide, silicon nitride, and the like, but is not limited thereto.
In some preferred embodiments, the fluorochemical in the fluorochemical layer is covalently bonded to the surface of the dielectric film.
In some preferred embodiments, the template body may include any one of a hard template, a soft template, a composite template, and the like, but is not limited thereto.
Another aspect of the embodiment of the present invention further provides a method for facilitating nanoimprint demolding, including:
providing a template body, wherein a micro-nano structure is formed on the template body;
depositing a dielectric material on the micro-nano structure to form a dielectric film conformally covering the micro-nano structure;
performing surface treatment on the dielectric film by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film;
reacting a fluorine-containing compound with the oxygen radicals to form a fluorine-containing compound layer on the surface of the dielectric thin film.
In some preferred embodiments, the dielectric material is deposited on the micro-nano structure by adopting a deposition mode with high step coverage rate so as to form the dielectric film.
In some more preferred embodiments, the deposition mode with high step coverage may include atomic force deposition, but is not limited thereto.
In some preferred embodiments, the fluorochemical layer is formed by uniformly depositing the fluorochemical on at least the surface of the dielectric film having oxygen radicals on the surface by physical vapor deposition.
According to the embodiment of the invention, the uniform dielectric film and the fluorine-containing compound are deposited on the nanoimprint fine structure, namely, stable and uniform oxygen free radicals are formed on the dielectric film, and the fluorine-containing compound is adopted to modify the surface of the structure, so that the free energy of the surface can be reduced, and the demolding yield can be improved.
The invention is further described with reference to fig. 1 to 2.
Example 1
The present embodiment provides a nano-imprint template, as shown in fig. 2, including:
the template comprises a template body 1, wherein a micro-nano structure 11 is formed on the template body 1;
a dielectric film 2, wherein the dielectric film 2 conformally covers the micro-nano structure 11;
and a fluorine-containing compound layer uniformly bonded to the surface of the dielectric thin film 2, and the fluorine-containing compound 3 in the fluorine-containing compound layer is covalently bonded to the surface of the dielectric thin film.
In this embodiment, the aspect ratio of the micro-nano structure 11 is 1:0.01-1:10, the thickness of the dielectric thin film 2 is 0.3-20nm, the material of the dielectric thin film 2 can be silicon oxide, and the template body 1 can be any one of a hard template, a soft template, a composite template, and the like.
Example 2
A method for facilitating nanoimprint demolding, comprising the steps of:
s1, as shown in FIG. 1, providing a template body 1, wherein a micro-nano structure 11 is formed on the template body 1, the aspect ratio of the micro-nano structure is 5:1, and a silicon oxide film is deposited on the micro-nano structure 11 in an Atomic Layer (ALD) deposition mode to form a dielectric film 2 conformally covering the micro-nano structure 11; wherein ALD deposition equipment using PEALD equipment from Jusung Corp., korea, and deposition gas using silane (SiH 4 ) With nitrogen oxide (N) 2 O) and inert gas adopts high-purity nitrogen, the temperature of a base is set to 80 ℃ (low-temperature deposition, and proper base plate body materials are wider), and N is introduced during deposition 2 The O gas is introduced for 0.5s at the flow rate of 20sccm, and uniform atomic oxygen bonds are formed on the surface of the substrate; then let in N 2 Purging the pipeline at a flow rate of 50sccm to remove excess N 2 O, purge time 0.3s; then SiH is introduced 4 The flow rate of the gas is 12sccm, the time is 0.5s, an atomic silicon oxygen bond is formed with an oxygen bond, and the plasma power is 200w; introducing nitrogen, flowing at 50sccm for 0.3s, and purging redundant SiH 4 And (3) gas.
The number of cycles was 25, resulting in a deposited silicon oxide film thickness of about 2 nm.
S2, performing surface treatment on the dielectric film 2 by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film 2; wherein, during oxygen plasma treatment, the flow rate of oxygen is 50sccm, the power is 200w, the treatment time is 0.3 minutes, and enough oxygen free radicals are formed on the surface of the medium.
S3, as shown in fig. 2, uniformly depositing a fluorine-containing compound 3 on the surface of the dielectric film 2 with oxygen radicals on the surface by a physical vapor deposition mode, so that the fluorine-containing compound 3 and the oxygen radicals form a chemical reaction of surface single molecule self-assembly, thereby forming a fluorine-containing compound layer on the surface of the dielectric film 2 (the structure of the fluorine-containing compound 3 formed at the micro-nano structure 11 in the figure is the same as that of the outside, and is indicated by a abbreviated CF2 due to the limitation of picture space), and enabling the template to be easily separated from the imprinting glue.
Example 3
A method for facilitating nanoimprint demolding, comprising the steps of:
s1, as shown in FIG. 1, providing a template body 1, wherein a micro-nano structure 11 is formed on the template body 1, the aspect ratio of the micro-nano structure is 1:10, and a silicon oxide film is deposited on the micro-nano structure 11 in an Atomic Layer (ALD) deposition mode to form a dielectric film 2 conformally covering the micro-nano structure 11; wherein, when ALD deposits silicon oxide film, silane (SiH 4 ) With nitrogen oxide (N) 2 O) inert gas adopts high-purity nitrogen, the temperature of the substrate is set to 100 ℃, and N is firstly introduced 2 O gas with the flow rate of 40sccm is introduced for 0.2s, and uniform atomic oxygen bonds are formed on the surface of the substrate; introducing N 2 The flow rate is 80sccm, the pipeline is purged, and redundant N is removed 2 O, purge time 0.3s; then SiH is introduced 4 The flow rate of the gas is 20sccm, the time is 0.2s, an atomic-level silicon oxygen bond is formed with an oxygen bond, and the plasma power is 400 watts; introducing nitrogen, flowing at 80sccm for 0.3s, and purging redundant SiH 4 And (3) gas.
The number of cycles was 220, which resulted in a deposited silicon oxide film thickness of about 20nm (i have omitted 4 but not shown, and labeled here).
S2, performing surface treatment on the dielectric film 2 by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film 2; wherein, during oxygen plasma treatment, the flow rate of oxygen is 80sccm, the power is 300w, the treatment time is 0.5 min, and enough oxygen free radicals are formed on the surface of the medium.
S3, as shown in fig. 2, uniformly depositing a fluorine-containing compound 3 on the surface of the dielectric film 2 with oxygen radicals on the surface by a physical vapor deposition mode, so that the fluorine-containing compound 3 and the oxygen radicals form a chemical reaction of surface single molecule self-assembly, thereby forming a fluorine-containing compound layer on the surface of the dielectric film 2 (the structure of the fluorine-containing compound 3 formed at the micro-nano structure 11 in the figure is the same as that of the outside, and is indicated by a abbreviated CF2 due to the limitation of picture space), and enabling the template to be easily separated from the imprinting glue.
Example 4
A method for facilitating nanoimprint demolding, comprising the steps of:
s1, as shown in FIG. 1, providing a template body 1, wherein a micro-nano structure 11 is formed on the template body 1, the aspect ratio of the micro-nano structure is 1:1, and a silicon oxide film is deposited on the micro-nano structure 11 in an Atomic Layer (ALD) deposition mode to form a dielectric film 2 conformally covering the micro-nano structure 11; wherein ALD deposits a silicon oxide film using silane (SiH 4 ) With nitrogen oxide (N) 2 O), inert gas adopts high-purity nitrogen. The temperature of the substrate is set to 150 ℃, and N is firstly introduced 2 O gas with the flow rate of 60sccm is introduced for 0.2s, and uniform atomic oxygen bonds are formed on the surface of the substrate; introducing N 2 The flow rate is 100sccm, the pipeline is purged, and redundant N is removed 2 O, purge time 0.3s; then SiH is introduced 4 The flow rate of the gas is 30sccm, the time is 0.2s, an atomic-level silicon oxygen bond is formed with an oxygen bond, and the plasma power is 500w; introducing nitrogen, flowing at 100sccm for 0.3s, and purging redundant SiH 4 And (3) gas.
The number of cycles was 5, resulting in a deposited silicon oxide film thickness of about 0.3 nm.
S2, performing surface treatment on the dielectric film 2 by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film 2; in the oxygen plasma treatment, the flow rate of oxygen is 30sccm, the power is 100w, the treatment time is 0.2 minutes, and enough oxygen free radicals are formed on the surface of the medium.
S3, as shown in fig. 2, uniformly depositing a fluorine-containing compound 3 on the surface of the dielectric film 2 with oxygen radicals on the surface by a physical vapor deposition mode, so that the fluorine-containing compound 3 and the oxygen radicals form a chemical reaction of surface single molecule self-assembly, thereby forming a fluorine-containing compound layer on the surface of the dielectric film 2 (the structure of the fluorine-containing compound 3 formed at the micro-nano structure 11 in the figure is the same as that of the outside, and is indicated by a abbreviated CF2 due to the limitation of picture space), and enabling the template to be easily separated from the imprinting glue.
Comparative example
A method for facilitating nanoimprint demolding, comprising the steps of:
s1, providing a template body, wherein a micro-nano structure is formed on the template body, and a dielectric material is deposited on the micro-nano structure in a vapor phase chemical deposition (CVD) mode to form a dielectric film conformally covering the micro-nano structure;
s2, carrying out surface treatment on the dielectric film by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film and separate the template from the imprinting glue.
The method of this comparative example was compared with the method of example 2, and the mold release yield of example 2 was 99% and the mold release yield of the comparative example was 85%.
In addition, the inventors have conducted experiments with other materials, process operations, and process conditions as described in this specification with reference to the foregoing examples, and have all obtained desirable results.
While the invention has been described with reference to an illustrative embodiment, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims. Moreover, unless specifically stated any use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another.
Claims (9)
1. A nanoimprint template, characterized by comprising:
the template comprises a template body, wherein a micro-nano structure is formed on the template body;
the medium film conformally covers the micro-nano structure;
and the fluorine-containing compound layer is uniformly combined with the surface of the dielectric film.
2. The nanoimprint template of claim 1, wherein: the depth-to-width ratio of the micro-nano structure is 1:0.01-1:10.
3. The nanoimprint template of claim 1, wherein: the thickness of the dielectric film is 0.3-20nm; and/or the material of the dielectric film comprises any one or more mixed film layers of silicon oxide, aluminum oxide and silicon nitride.
4. The nanoimprint template of claim 1, wherein: the fluorine-containing compound in the fluorine-containing compound layer is covalently bonded to the surface of the dielectric film.
5. The nanoimprint template of claim 1, wherein: the template body comprises any one of a hard template, a soft template or a composite template.
6. A method for facilitating nanoimprint demolding, comprising:
providing a template body, wherein a micro-nano structure is formed on the template body;
depositing a dielectric material on the micro-nano structure to form a dielectric film conformally covering the micro-nano structure;
performing surface treatment on the dielectric film by adopting oxygen plasma so as to generate oxygen free radicals on the surface of the dielectric film;
and (3) chemically reacting the fluorine-containing compound with the oxygen free radical forming surface single molecule self-assembly, so as to form a fluorine-containing compound layer on the surface of the medium film.
7. The method for facilitating nanoimprint demolding according to claim 6, wherein: and depositing the dielectric material on the micro-nano structure by adopting a deposition mode with high step coverage rate so as to form the dielectric film.
8. The method for facilitating nanoimprint demolding as claimed in claim 7, wherein: the deposition mode with high step coverage rate comprises atomic layer deposition.
9. The method for facilitating nanoimprint demolding according to claim 6, wherein: and uniformly depositing a fluorine-containing compound on the surface of the dielectric film at least through a physical vapor deposition mode, wherein the surface of the dielectric film is provided with oxygen free radicals, so as to form the fluorine-containing compound layer.
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| CN202310277233.5A CN116224713A (en) | 2023-03-21 | 2023-03-21 | Nanometer impression template and method for facilitating nanometer impression demoulding |
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| CN202310277233.5A CN116224713A (en) | 2023-03-21 | 2023-03-21 | Nanometer impression template and method for facilitating nanometer impression demoulding |
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