CN116224650A - Light source assembly for Mini LED backlight module and manufacturing method thereof - Google Patents

Light source assembly for Mini LED backlight module and manufacturing method thereof Download PDF

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Publication number
CN116224650A
CN116224650A CN202211612359.5A CN202211612359A CN116224650A CN 116224650 A CN116224650 A CN 116224650A CN 202211612359 A CN202211612359 A CN 202211612359A CN 116224650 A CN116224650 A CN 116224650A
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Prior art keywords
light emitting
layer
light
circuit substrate
emitting unit
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朱磊
毛祖攀
张继凡
何涛
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Anhui Liguang Electronic Material Co ltd
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Anhui Liguang Electronic Material Co ltd
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Priority to CN202211612359.5A priority Critical patent/CN116224650A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133611—Direct backlight including means for improving the brightness uniformity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/146—By vapour deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Planar Illumination Modules (AREA)

Abstract

The invention relates to a light source component for a Mini LED backlight module and a manufacturing method thereof, comprising the following steps: a plurality of light-emitting units are arranged on the front surface of the circuit substrate, and at least two layers of reflection increasing films are plated on the front surface of the circuit substrate and the surfaces of the light-emitting units; plating a metal layer on the surface of the reflection increasing film in a direction away from the circuit substrate; sputtering base material molecules on the surface of the metal layer to form a shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit; and removing the shading layer and the metal layer on the surface of the positive light emitting surface of the light emitting unit. The light source component is suitable for the Mini LED backlight module, can effectively improve the brightness of a light source, reduce the halation effect, improve the display contrast and the image quality effect, and can save the cost and reduce the energy consumption.

Description

Light source assembly for Mini LED backlight module and manufacturing method thereof
Technical Field
The invention relates to the technical field of display, in particular to a manufacturing method of a light source assembly for a Mini LED backlight module.
Background
Mini LED backlight is used as a novel backlight, is widely applied in the field of liquid crystal display, and has the characteristics of light weight, high resolution, low power consumption and the like compared with the traditional LED backlight, and is paid attention in recent years. Mini LEDs are also called submillimeter light emitting diodes, and a Mini LED backlight passes through a dense array of a large number of Mini LED chips, namely thousands of narrow-pitch light emitting diodes with the size of hundreds of micrometers, which can realize regional dimming within a precise range, and the halation effect is a difficult problem faced by the local dimming technology, and the smaller the halation area is conventionally considered to be, the better, but in practice if the halation in the Mini-LED backlight is actually made to be extremely small, a mosaic-like effect appears in the regional dimming technology, and the display effect is reduced instead. Otherwise, if the halo area is too large, the effect of realizing high contrast of the Mini-LED backlight is greatly influenced, and the selection of the light source component matched with the Mini LED backlight module plays a vital role in adjusting the halo effect and improving the display effect of the Mini LED.
In the prior art, an opaque black ink layer or black adhesive layer (hereinafter referred to as a black deposition layer) is manufactured on a PCB board through processes such as inkjet printing, black adhesive joint filling and thermal lamination so as to solve the problems that a Mini LED chip and a package body of the Mini LED chip (hereinafter referred to as a light emitting unit) are welded on the PCB board through a bonding pad, a part of the bonding pad is not covered by the light emitting unit, in the welding process, the adopted welding tin paste becomes silver after being melted and covers the surface of the bonding pad, the silver has a reflective characteristic, so that the display screen is not black enough in the black screen, namely the contrast of the display screen is reduced, and the display effect is affected.
The prior art CN114975394a discloses an LED light source assembly, a method for manufacturing the same, and an LED display screen, wherein a black deposition layer is formed by sputtering and depositing molecules of a black substrate on the front surface of a circuit substrate and the surface of each light emitting unit; the process is not limited by the flatness of the area to be formed with the black deposition layer, so that the area to be covered by the black deposition layer is 100%, the formed black deposition layer is uniform, the black chromaticity difference of each position of the light shielding layer can be reduced, the contrast ratio of a display screen manufactured by adopting the LED light source assembly can be improved, the appearance of spots caused by side view angle luminescence of the display screen can be avoided, the problems that the manufacturing process of the black layer on a PCB (printed circuit board) in the existing display screen is limited by flatness, the manufactured light shielding layer is poor in uniformity and consistency, coverage dead angles are easy to occur, the contrast ratio and the display effect of the display screen are poor, meanwhile, the sputtering process is low in production control difficulty, high in yield and low in production cost are solved.
Compared with the traditional LED, the light modulation precision of the light source component in the Mini LED backlight module has higher requirements, the proportion of the display area occupied by the light emitting units is larger and larger along with the reduction of the pixel spacing in the Mini LED backlight module, the size of a bonding pad for welding electrodes of the light emitting units on a PCB (printed circuit board) is matched with the size of the Mini LED chip, and the shading layer is uniformly covered so as to improve the contrast ratio of a display screen and play a remarkable role in improving the display effect of the Mini LED, so that the light source component has higher technical requirements on the manufacturing precision in the application of the Mini LED backlight module.
Disclosure of Invention
The invention provides a light source component for a Mini LED backlight module, and aims to provide a manufacturing method of a shading layer on a PCB (printed circuit board) suitable for the Mini LED backlight module, wherein the shading layer comprises a black deposition layer, the flatness, uniformity and consistency of the shading layer on the manufactured PCB are superior to those of the prior art, dead angles are avoided, the side surface of a light emitting unit in the manufactured light source component for the Mini LED backlight module can be completely covered by the shading layer, so that sufficient brightness and uniformly distributed light sources are provided, and the problems of insufficient brightness, nonuniform distribution and overlarge power consumption of the light source component in the prior art are solved.
The invention provides a light source component for Mini LED backlight module and a manufacturing method thereof, wherein the structure of the light source component comprises: the light-emitting device comprises a circuit substrate, a light-emitting unit, a reflection enhancing film layer, a metal layer and a shading layer;
a plurality of light emitting units arranged on the front surface of the circuit substrate;
plating a reflection enhancing film layer on the front surface of the circuit substrate and the surface of the light-emitting unit;
plating a metal layer on the surface of the reflection increasing film in a direction away from the circuit substrate;
plating a shading layer on the surface of the metal layer to form a shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit;
removing the shading layer, the metal layer and the reflection enhancing film layer on the surface of the positive light emitting surface of the light emitting unit, wherein the positive light emitting surface of the light emitting unit is the surface of the light emitting unit, which is far away from the circuit substrate and parallel to the circuit substrate;
at least a part of the light emitting surface of the light emitting unit, which is at least partially removed from the light shielding layer and the metal layer, is in a light transmission state.
Further, the reflection enhancing film comprises at least one layer of high refractive index film layer and at least one layer of low refractive index film layer, and at least one layer of high refractive index film layer and one layer of low refractive index film layer in the reflection enhancing film are in contact and superposition with each other.
Further, the total thickness of the reflection enhancing film layer is 100-600nm.
Further, the material of the metal layer is selected from silver, aluminum, zinc or any combination thereof.
Further, the total thickness of the metal layer is 10-200nm.
Further, the substrate is at least one selected from the group consisting of oxides, silicides, and nitrides.
Further, the light shielding layer may be, but is not limited to, a black deposition layer state.
Further, the state of removing the light shielding layer, the metal layer and the reflection enhancing film layer on the surface of the light emitting unit is as follows:
the shading layer, the metal layer and the reflection enhancing film layer on the surface of the positive light emitting surface of the light emitting unit are all removed;
or (b)
The shading layer and the metal layer on the surface of the positive light emitting surface of the light emitting unit are all removed, and a part of the reflection enhancing film layer is removed;
or (b)
And the shading layer and the metal layer on the surface of the positive light emitting surface of the light emitting unit are all removed.
A manufacturing method of a light source component for a Mini LED backlight module is characterized in that,
a plurality of light-emitting units are arranged on the front surface of the circuit substrate;
plating a reflection enhancing film layer on the front surface of the circuit substrate and the surface of the light-emitting unit;
plating a metal layer on the surface of the reflection increasing film in a direction away from the circuit substrate;
sputtering black base material molecules on the surface of the metal layer to form a shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit;
removing the shading layer, the metal layer and the reflection enhancing film layer on the surface of the positive light emitting surface of the light emitting unit, and enabling the positive light emitting surface of the light emitting unit to be the surface, far away from the circuit substrate, of the light emitting unit and parallel to the circuit substrate;
at least a part of the light emitting surface of the light emitting unit, which is at least partially removed from the light shielding layer and the metal layer, is in a light transmission state.
Further, a reflection enhancing film layer is plated on the front surface of the circuit substrate and the surface of the light emitting unit, and the plating mode comprises the following steps: one or more of magnetron sputtering, vacuum evaporation, vacuum sputtering and arc ion plating.
Further, a metal layer is plated on the surface of the reflection increasing film in the direction away from the circuit substrate,
the plating method comprises the following steps: one or more of magnetron sputtering, vacuum evaporation, vacuum sputtering and arc ion plating.
Further, the substrate molecules are sputtered on the surface of the metal layer in a magnetron sputtering method.
Further, at least a part of the light shielding layer and the metal layer are removed, and the removing method comprises the following steps: one or more of laser etching, grinding, plasma etching.
The light source component suitable for the Mini LED backlight module is simple in manufacturing process, the reflection enhancing film layer, the metal layer and the shading layer are plated on the front surface of the circuit substrate and the surfaces of the light emitting units, the shading layer and the metal layer on the parts of the light emitting front surface are removed, and then the light emitting front surface is not required to be packaged in addition to be used as the light source component.
According to the invention, the reflection enhancing films are plated on the front surface of the circuit substrate and the surfaces of the light emitting units, the ideal reflection enhancing effect can be obtained by utilizing the property that the reflection enhancing films can reflect specific wavelengths and the number of the film layers of the reflection enhancing films, the metal layers on the reflection enhancing films play a role of reflecting mirrors, the combination of the reflection enhancing films on the side surfaces of the light emitting units and the metal films serving as reflecting mirrors can reduce the light loss of the light emitting units, increase the light emitting brightness of the light emitting units, improve the display effect of the Mini LED backlight module, and meanwhile, the reflection enhancing films effectively improve the polarization degree of emergent light of the light emitting units, so that the power consumption is reduced and the cost is reduced.
According to the invention, the metal layer deposited on the surface of the reflection increasing film plays a role of a reflecting mirror, the side light is reflected by the metal layer, and the light shielding layer at the side edge of the light emitting unit does not absorb light to increase luminous flux, so that the temperature of the light source component is reduced, and the problem that the light emitting performance of the light source component is unstable due to temperature rise is solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following description will briefly explain the drawings needed in the description of the embodiments of the present invention, and it should be apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the contents of the embodiments of the present invention and the drawings without inventive effort for those skilled in the art.
In addition, the drawings in the following description are for convenience of understanding, and the dimensional proportion of each element is adjusted accordingly.
FIG. 1 is a schematic cross-sectional view of a black layer formed by ink jet printing and black paste caulking in the prior art;
FIG. 2 is a step of implementing the inventive arrangement;
FIG. 3 is a cross-sectional view showing an arrangement of light emitting units on a circuit substrate according to an embodiment of the present invention;
FIG. 4 is a schematic view of the structure of the light source module of the present invention after coating each film;
fig. 5 is a schematic view showing the removal of the black layer, the antireflection film, the metal layer, and the light shielding layer along the position of the light emitting unit.
In the figure: circuit board 101, light emitting unit 102, black layer 103, reflection enhancing film 104, metal layer 105, light shielding layer 106
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be understood that the process equipment or devices not specifically identified in the examples below are all conventional in the art. Furthermore, it is to be understood that the reference to one or more method steps in this disclosure does not exclude the presence of other method steps before or after the combination step or the insertion of other method steps between these explicitly mentioned steps, unless otherwise indicated; it should also be understood that the combined connection between one or more devices/means mentioned in the present invention does not exclude that other devices/means may also be present before and after the combined device/means or that other devices/means may also be interposed between these two explicitly mentioned devices/means, unless otherwise indicated. Moreover, unless otherwise indicated, the numbering of the method steps is merely a convenient tool for identifying the method steps and is not intended to limit the order of arrangement of the method steps or to limit the scope of the invention in which the invention may be practiced, as such changes or modifications in their relative relationships may be regarded as within the scope of the invention without substantial modification to the technical matter. Spatially relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the exemplary term "above … …" may include both orientations of "above … …" and "below … …". The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The embodiment provides a manufacturing method of a light source assembly suitable for a Mini LED backlight module, which comprises the following steps:
s201: a plurality of light-emitting units are arranged on the front surface of the circuit substrate;
the front surface of the circuit board is provided with a plurality of bonding pads for electrically connecting with the electrodes of the light-emitting units, and the distribution of the bonding pads can be in matrix distribution; of course, other distribution modes can be set according to the requirements, and the embodiment is not limited in particular. In some examples of this embodiment, the bonding pad may be made of silver, aluminum, zinc, or the like. In this embodiment, the bonding pads on the front surface of the circuit substrate may be used for, but not limited to, electrical connection with the electrodes of the light emitting units, and the electrodes of the light emitting units may be electrically connected with the corresponding bonding pads through, but not limited to, solder, conductive paste. The light emitting unit in the present embodiment may be, but is not limited to, a MiniLED chip package. In the embodiment, the LED chips may be at least one of Mini LED chips, micro LED chips, and common LED chips with a size larger than that of the Mini LED chips from the size classification; preferably, the distribution mode of the electrodes of the LED chips can comprise at least one of flip-chip LED chips, forward-mounted LED chips and vertical LED chips; the flip-chip LED chip may be preferred when the light emitting unit is an LED chip. Of course, it should also be understood that the LED light source assembly in this embodiment is not limited to use in the display field.
In this embodiment, the surface opposite to the front surface of the circuit substrate is the back surface of the circuit substrate; it should be appreciated that the front and back sides of the wiring substrate in this embodiment are relatively speaking. It should be appreciated that the circuit substrate in this embodiment may be made of various types of materials, and may be made of rigid materials, for example, but not limited to phenolic paper laminate, polyester glass felt laminate, epoxy paper laminate, epoxy glass cloth laminate, BT resin board, or glass board yin; the circuit substrate in this embodiment may also be made of flexible material, for example, but not limited to, polyester film, polyimide film, fluorinated ethylene propylene film. In some examples, the circuit substrate or the surface of the circuit substrate may be provided with corresponding circuits and corresponding soldering manners according to application requirements, for example, but not limited to, a circuit connected with the light emitting unit, a driving circuit, and the like.
In an application scenario of the present embodiment, one light emitting pixel unit may be provided with at least two light emitting units, and the number, size, and light emitting color of the light emitting units included in each light emitting pixel unit may be the same, or may be different or partially the same or partially different, which may be specifically flexibly set according to a specific application scenario. For example, in some examples, the light emitting pixel unit may include three light emitting units respectively emitting three colors of red light, blue light and green light, respectively, which are sequentially arranged red light emitting units, green light emitting units and blue light emitting units. In other examples, the light emitting pixel unit may include a white light emitting unit in addition to a red light emitting unit, a green light emitting unit, and a blue light emitting unit. It should be understood that, in this embodiment, the specific arrangement manner of each light emitting unit in the light emitting pixel units may be a delta arrangement, a linear arrangement, a central symmetry arrangement, etc., which is not limited in this embodiment.
S202: plating at least two layers of reflection increasing films on the front surface of the circuit substrate and the surface of the light-emitting unit;
the reflection enhancing film is a multilayer film system formed by alternately plating materials with high refractive index and low refractive index according to the design thickness. TiO2 and SiO2 can be selected as a high refractive index material and a low refractive index material for preparing the reflection enhancing film respectively.
The reflection-increasing film can be prepared by adopting deposition processes such as bipolar sputtering, tripolar sputtering, reactive sputtering, magnetron sputtering, double ion beam sputtering, plasma chemical vapor deposition, evaporation and the like, the deposition preparation process of the reflection-increasing film is developed and widely applied in the prior art, the conventional manufacturing technology is now established, the reflection-increasing film is deposited on the front surface of the circuit substrate and the surface of the light-emitting unit, the manufacturing process is mature and the thickness of the reflection-increasing film is easy to control, and the calculation method of the optical film mainly comprises a patterning method, a recurrence method, a matrix method and the like by adjusting the thickness of the reflection-increasing film, so that the calculation problem of the multilayer reflection-increasing film is easy to obtain by means of a mathematical model mature in the field.
In some preferred embodiments, tiO2 is used as a high refractive index material, siO2 is used as a binary film system of a low refractive index material, the binary film system is prepared by a magnetron sputtering method, and the TiO2 and SiO2 antireflection film prepared by the magnetron sputtering method has the advantages of good binding force, uniform thickness, compact film structure, good uniformity, high mechanical strength and the like, and the thickness of the antireflection film deposited by the magnetron sputtering method is easy to control, so that the binary film system is suitable for nanoscale high-precision film plating of the Mini LED light source component. Because the requirements on uniformity, thickness, binding force and the like of a plating film on the front surface of a circuit substrate and the surface of a light-emitting unit are high, experiments and production find that the factors influencing magnetron sputtering are many, and the characteristics of a film are influenced by various factors directly or interactively.
Example one:
setting the sputtering power of the magnetron sputtering equipment to 80w, the argon flow to 15sccm, the oxygen flow to 8sccm, the sputtering pressure to 2.0Pa, the target base distance to 60cm and the vacuum degree to 4 multiplied by 10 -1 And (3) preparing a TiO2 single-layer film and a SiO2 single-layer film or a TiO2 film and SiO2 film multilayer structure sequentially above Pa.
Example two:
setting the sputtering power of the magnetron sputtering equipment to 70w, the argon flow to 15sccm, the oxygen flow to 10sccm, the sputtering pressure to 2.0Pa, the target base distance to 75cm and the vacuum degree to 4 multiplied by 10 -1 And (3) preparing a TiO2 single-layer film and a SiO2 single-layer film or a TiO2 film and SiO2 film multilayer structure sequentially above Pa.
After the reflection enhancement film is deposited according to the parameter of the example, the reflection rate of the front surface of the circuit substrate and the surface of the light-emitting unit is measured by an ellipsometer and is increased by not less than three times compared with that before the film coating, and the peak value reflection rate of the reflection enhancement film reaches 85%; after the reflection enhancement film is deposited according to the second parameter of the example, the reflection rate of the front surface of the circuit substrate and the surface of the light-emitting unit is increased by about four times compared with that before the film coating by adopting an ellipsometer, and the peak reflection rate of the reflection enhancement film reaches 90%.
In summary, the desired effect can be achieved by depositing the antireflective film according to the parameters provided by the above two examples.
The total thickness of the reflection increasing film is in the range of 100-600nm.
S203: plating a metal layer on the surface of the reflection increasing film in a direction away from the circuit substrate;
the reflection enhancing film is coated with the metal layer on the surface of the reflection enhancing film in a direction away from the circuit substrate, the metal layer can play a role of a reflecting mirror, meanwhile, the reflection enhancing film is arranged between the circuit substrate and the metal layer, the reflection enhancing film can play an insulating role, and the problems of circuit short circuit and the like caused by direct contact of the metal layer and welding spots on the circuit substrate are prevented. The metal layer can realize good heat dissipation function and anti-electromagnetic interference function, has good reflection and brightening effects, and is used for reflecting light reflected by the reflection enhancement film on the light-emitting unit to the light emitting direction of the light-emitting unit perpendicular to the horizontal line of the light-emitting unit, so that good effects of brightening the LED and solving halation are achieved.
The material of the metal coating layer is selected from silver, aluminum, zinc or any combination thereof, or other metals or metal alloys.
The metal layer can be plated by, but not limited to, magnetron sputtering, vacuum evaporation plating and the like.
Example one:
placing the circuit substrate with the luminous unit plated with the reflection enhancing film in a magnetron sputtering chamber, and reducing the vacuum degree to 3×10 under the inert gas environment -1 Under Pa, guiding the metal target material by using a magnetic field, and enhancing reflection
And a metal coating is deposited on the surface of the film in the direction away from the circuit substrate, the metal substrate is made of metal with stronger reflectivity, and 5 plays a role of a reflecting mirror on the surface of the reflection enhancing film.
Example two:
the circuit substrate with the luminous unit, which is plated with the reflection increasing film, is placed in a vacuum chamber, metal, such as silver, to be formed into a film in an evaporation container is heated, atoms or molecules of the metal are vaporized and escaped from the surface to form vapor flow, the vapor flow is incident on the surfaces of the circuit substrate and the luminous unit, and the metal silver film is formed by condensation.
More than 0, in preparing a light source assembly suitable for a Mini LED backlight module, magnetron sputtering is preferred
The metal layer is prepared in a mode, and the thickness of the deposited metal layer is between 10 and 200nm.
S204: sputtering black base material molecules on the surface of the metal layer to form a shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit;
example one:
5 under the vacuum magnetic environment, the magnetic field is used for guiding ions to bombard a black substrate, and the black substrate is subjected to the magnetic field
Molecules of the material are uniformly sputtered on the front surface of the circuit substrate and the surface of each light-emitting unit, so that a shading layer is formed by deposition.
Example two:
under the vacuum magnetic environment, the magnetic field is utilized to guide ions to bombard at least two black substrates simultaneously, 0 molecules of at least two black substrates are uniformly sputtered on the front surface of the circuit substrate and the surface of each light-emitting unit,
thereby depositing a light shielding layer. In this example, at least two black substrates are bombarded simultaneously, so that molecules of the at least two black substrates can be sputtered simultaneously to the region where the light shielding layer is to be formed, and deposited to form a black layer comprising a mixture of molecules. It should of course be understood that the present example is not limited to two types
The molecules of the black substrate are sputtered to form a black layer, and three or more than 5 kinds of molecules of the black substrate can be sputtered to form a black layer according to requirements, which is not described in detail in this example.
Example three:
and under the vacuum magnetic flux environment, the ions are guided by a magnetic field to bombard at least two black substrates in sequence, and molecules of the at least two black substrates are uniformly sputtered on the front surface of the circuit substrate and the surface of each light-emitting unit in sequence, so that a shading layer is formed by deposition. In this example, at least two kinds of black substrates are bombarded sequentially, so that molecules of the at least two kinds of black substrates can be sputtered sequentially to the region where the light shielding layer is required to be formed, and deposited to form
A black layer comprising a plurality of molecules. Can be deposited in multiple times, in this example, the first black 5 substrate is deposited for the first time, and black substrate molecules are uniformly sputtered on the front surface of the circuit substrate and the surface of each light emitting unit to form
Forming a first molecular layer; forming a first molecular layer, performing second deposition on the surface of the first molecular layer along the direction far from the front surface of the circuit substrate, bombarding a second black base material with magnetic field guide ions for the second time, and uniformly sputtering the second black base material on the first molecular layer, namely, the front surface of the circuit substrate and the surface of the light-emitting unit
Forming a uniform second molecular layer on the first molecular layer; the deposition of the third black molecule 0 layer was continued in the same manner. It should of course be understood that this example is not limited to sequential molecular processing of three black substrates
The black layer is formed by sputtering, and the black layer can be formed by sequentially sputtering molecules of two or more than three kinds of black substrates according to requirements, and the above molecular sublayers in the example can also be arranged in an alternating manner.
As can be seen from the above examples, the sputtering process in this embodiment can employ, but is not limited to, magnetron sputtering
The irradiation process has simple control on the consistency and coverage rate of the formed shading layer, and the prepared shading layer has high yield, high efficiency and low cost. The light shielding layer in this embodiment may be formed by deposition of one molecule, or may be formed by layered deposition or mixed transaction deposition of more than two molecules, so that it may be determined according to specific applications
The light shielding layer is flexibly and correspondingly arranged according to the requirements of the scene on the light transmittance, the blackness and the like of the light shielding layer. In particular, 0 the light-shielding layer in the above example two and example three includes at least two molecules, so that light shielding can be flexibly performed
The characteristics of blackness, light transmittance and the like of the layers are blended to meet application requirements, so that the contrast ratio is ensured, and meanwhile, the display effect is improved.
Meanwhile, it should be understood that the present embodiment is not limited to the magnetron sputtering process, and other sputtering processes capable of implementing the light shielding layer may be used for equivalent replacement, which is not limited in this embodiment.
5 the black substrate in this embodiment can be flexibly selected. For example, in some examples, the present implementations
The black substrate in the examples may include, but is not limited to, at least one of an oxide, a silicide, a nitride, and a composition, and the composition in the examples may be, but is not limited to, a composition of at least two of an oxide, a silicide, and a nitride. For example, in some application scenarios AZO substrates, siO may be used, but are not limited to 2 Substrate, siO substrate, siC substrate, si 3 N 4 The substrate, or at least one of the composite substrates of at least two of the above substrates, and the oxide substrate, the silicide substrate, the nitride substrate and the composite substrate exemplified above in this embodiment are all conventional materials, and have low cost and good versatility.
The thickness of the light shielding layer manufactured in this embodiment can be flexibly set according to the requirements of light transmittance, blackness, and the like of the light shielding layer. For example, in some application examples, the thickness of the light shielding layer is greater than or equal to 10 nm and less than or equal to 400nm, and it can be seen that the light shielding layer in this example is an ultrathin layer, so that the overall thickness of the Mini LED light source assembly is not increased greatly, and the ultrathin Mini LED light source assembly is facilitated.
S205: removing the light shielding layer and the metal layer on the surface of the front light emitting surface of the light emitting unit, and optionally removing the light shielding layer, the metal layer and the reflection enhancing film layer on the surface of the front light emitting surface of the light emitting unit; this step can be seen in fig. 5. In fig. 5, the upper diagram is the intermediate workpiece of step S204, and the lower diagram is the finished workpiece after removal.
In this embodiment, after the light shielding layer is formed, the light shielding layer and the metal layer on the light emitting surface of each light emitting unit are removed, so as to ensure the light emitting efficiency of each light emitting unit through the light emitting surface. It should be understood that in this embodiment, whether the reflection enhancing film layer on the light emitting unit is completely removed or only a part is removed, and how much is specifically removed when a part is removed, may be dynamically adjusted according to the requirements of a specific application scenario, the light emitting angle of the Mini LED may be calculated, and the required refraction degree for the optimal light emitting efficiency may be calculated to determine the removed part of the reflection enhancing film.
The invention provides the following specific embodiments:
example 1
S301: preparing a circuit substrate; the circuit substrate is made of flexible polyimide films, the polyimide film substrate is sequentially subjected to ultrasonic cleaning in acetone, absolute ethyl alcohol and deionized water for 10 minutes, a corresponding circuit is arranged on the front face of the circuit substrate according to practical application requirements after drying pretreatment, a plurality of bonding pads used for being connected with electrode points of the light-emitting units are arranged, the bonding pads are distributed in a matrix on the front face of the circuit substrate, and the bonding pads are made of metal copper.
S302: a plurality of light-emitting units are arranged on the front surface of the circuit substrate; and welding a light-emitting unit electrode on the bonding pad through conductive adhesive, wherein the light-emitting unit is a package body of Mini LED chips, and the Mini LED chips are arranged in an upright state.
S303: depositing a reflection enhancing film on the front surface of the circuit substrate and the surface of the light-emitting unit in the step S302; the reflection enhancing film is formed by alternately superposing a high refractive index material and a low refractive index material.
The high refractive index material is formed by using Ti as a target material and adopting a magnetron sputtering mode for deposition, and parameters of vacuum coating equipment are set: setting the sputtering power of the magnetron sputtering equipment to 120w, the argon flow to 15sccm, the oxygen flow to 10sccm, the sputtering pressure to 2.0Pa, the target base distance to 70cm and the vacuum degree to 4 multiplied by 10 -1 Pa, introducing a magnetic field on the surface of a target cathode, utilizing the constraint of the magnetic field on charged particles to induce argon ions to bombard the surface of the target, and sputtering out TiO 2 Material to deposit to form TiO 2 A film.
The low refractive index material is formed by adopting Si as a target material and adopting a magnetron sputtering mode for deposition, and parameters of vacuum coating equipment are set: setting the sputtering power of the magnetron sputtering equipment to 80w, the argon flow to 15sccm, the oxygen flow to 8sccm, the sputtering pressure to 2.0Pa, the target base distance to 60cm and the vacuum degree to 4 multiplied by 10 -1 Pa, introducing a magnetic field on the surface of a target cathode, and inducing argon ions to bombard the surface of the target by utilizing the constraint of the magnetic field on charged particlesSurface, sputtered SiO 2 Material to deposit SiO 2 A film.
The TiO 2 Film and SiO 2 The films are sequentially overlapped, and the total thickness of the reflection-increasing film is 300nm according to the predicted refractive index.
S304: sputtering metal silver on the surface of the reflection enhancing film, namely, the circuit substrate with the luminous unit, which is plated with the reflection enhancing film, on the circuit substrate after the step S303 is completed, placing the circuit substrate into a magnetron sputtering chamber, and setting the vacuum to be 4 multiplied by 10 in an argon environment -1 And Pa, sputtering current is 0.5A, a metal silver target is guided by utilizing a magnetic field, a metal silver plating layer is deposited on the surface of the reflection increasing film in the direction away from the circuit substrate in S303, and the thickness of the metal silver is 100nm.
S305: sputtering a shading layer, namely sputtering black base material molecules on the surface of the metal layer to form the shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit, wherein the black base material is SiC and AZO, and the vacuum is set to be 4 multiplied by 10 in a vacuum flux environment -1 Pa, the constraint of the magnetic field on the charged particles is utilized to induce argon ions to bombard the surfaces of the SiC and SiN targets simultaneously, the transparency of the light shielding layer is lower than 10%, and the light shielding layer is prepared to have the thickness of 150nm according to the transparency of the sputtering coating and sputtering for 1-3 times.
S306: and removing the light shielding layer and the metal layer on the surface of the light emitting unit positive light emitting surface, setting parameters of laser plating removing equipment according to the total thickness of the metal layer and the light shielding layer sputtered by the S304 and the S305, and removing the light shielding layer and the metal layer on the light emitting unit positive surface, wherein the laser is higher in process efficiency and removal precision of the metal layer and the light shielding layer, and the removed light shielding layer and metal layer powder can be recycled, so that resource waste is reduced.
According to the embodiment, the reflection enhancing film, the metal layer and the shading layer are formed on the flexible circuit substrate, only the reflection enhancing film is reserved on the positive light emitting surface of the light emitting unit on the flexible circuit substrate, the reflection enhancing film, the metal layer and the shading layer are reserved on the light emitting surfaces of the two sides of the light emitting unit, the light emitting unit expands the diffusion angle through multiple reflection of the reflection enhancing film and reflects the light emitted by the light emitting unit to the positive direction through the metal layers on the two sides of the light emitting unit, so that uniform light distribution is realized, meanwhile, the direct brightness of the light emitting unit is improved, the sputtering metal layer has a reflecting mirror effect, no separate reflecting sheet is needed, the distance between a Mini LED light source and a backlight module is effectively reduced, the backlight device is thinned, the utilization efficiency of light is improved, the light emitted by the Mini LED light emitting unit has the light concentration degree in an adjustable range, the influence of a halation effect on the color development effect of the Mini LED backlight module is effectively reduced, and the Mura lamp eye phenomenon is eliminated.
Example 2
S401: preparing a circuit substrate; the circuit substrate selects a BT resin plate which is made of rigid materials, the BT resin plate is sequentially subjected to ultrasonic cleaning in acetone, absolute ethyl alcohol and deionized water for 10 minutes, a corresponding circuit is arranged on the front surface of the circuit substrate according to practical application requirements after drying pretreatment, a plurality of bonding pads which are used for being connected with electrode points of the light-emitting units are arranged, the front surface of the circuit substrate of each bonding pad is in matrix distribution, and the bonding pads are made of metal copper-aluminum alloy.
S402: a plurality of light-emitting units are arranged on the front surface of the circuit substrate; and welding a light-emitting unit electrode on the bonding pad through conductive adhesive, wherein the light-emitting unit is a package body of Mini LED chips, and the Mini LED chips are arranged in an upright state.
S403: depositing a reflection enhancing film on the front surface of the circuit substrate and the surface of the light-emitting unit in the step S402; the reflection enhancing film is formed by alternately superposing a high refractive index material and a low refractive index material.
The high refractive index material is formed by using Ti as a target material and adopting a magnetron sputtering mode for deposition, and parameters of vacuum coating equipment are set: setting the sputtering power of the magnetron sputtering equipment to be 100w, the argon flow to be 12sccm, the oxygen flow to be 10sccm, the sputtering pressure to be 2.0Pa, the target base distance to be 75cm and the vacuum degree to be 4 multiplied by 10 -1 Pa, introducing a magnetic field on the surface of a target cathode, utilizing the constraint of the magnetic field on charged particles to induce argon ions to bombard the surface of the target, and sputtering out TiO 2 Material to deposit to form TiO 2 A film.
The low refractive index material is formed by adopting Si as a target material and adopting a magnetron sputtering mode for deposition, and parameters of vacuum coating equipment are set: setting the sputtering power 80w and the argon flow of the magnetron sputtering equipment15sccm, oxygen flow rate of 8sccm, sputtering pressure of 2.0Pa, target base distance of 60cm, and vacuum degree of 4×10 -1 Pa, introducing a magnetic field on the surface of a target cathode, utilizing the constraint of the magnetic field on charged particles to induce argon ions to bombard the surface of the target, and sputtering SiO 2 Material to deposit SiO 2 A film.
The TiO 2 Film and SiO 2 The films are sequentially overlapped, and the total thickness of the reflection-increasing film is 400nm according to the predicted refractive index.
S404: sputtering metal silver on the surface of the circuit substrate obtained in the step S403, namely the reflection enhancing film, placing the circuit substrate plated with the reflection enhancing film and provided with the light emitting unit in a magnetron sputtering chamber, and setting the vacuum to be 4 multiplied by 10 in an argon environment -1 And (3) Pa, sputtering current is 0.5A, a metal silver target is guided by utilizing a magnetic field, a metal silver plating layer is deposited on the surface of the reflection increasing film in the direction away from the circuit substrate in S403, and the thickness of the metal silver is 200nm.
S405: sputtering a shading layer, namely sputtering black base material molecules on the surface of the metal layer to form the shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit, wherein the black base material is SiC and SiN, and the vacuum is set to be 4 multiplied by 10 in a vacuum flux environment -1 Pa, the constraint of the magnetic field on the charged particles is utilized to induce argon ions to bombard the surfaces of the SiC and SiN targets in sequence, the transparency of the shading layer is lower than 30%, and sputtering is carried out for 2-4 times according to the transparency of the sputtering coating, so that the shading layer with the thickness of 150nm is obtained.
S406: and removing the light shielding layer, the metal layer and the reflection enhancing film layer on the surface of the light emitting unit front light emitting surface, setting parameters of laser plating removing equipment according to the total thickness of the light shielding layer, the metal layer and the reflection enhancing film layer sputtered in the step S404 and the step S405, and removing the light shielding layer, the metal layer and the reflection enhancing film layer on the light emitting unit front surface by combining processes such as grinding, plasma etching and the like.
Comparative example
Steps S401 to S402 are prepared and completed, and the light source module shown in fig. 3 is a light source module D1; the light-emitting unit with the same parameters as those described in the embodiment is a light source component B1 manufactured according to the method of manufacturing the black deposition layer described in the prior art; the steps S401 to S406 in this embodiment are completed as the light source module S1.
The light source assembly D1, the light source assembly B1 and the light source assembly S1 are respectively arranged in Mini LED backlight modules with the same specification to be TD1, TB2 and TS3, and the temperature cycle test is carried out according to the common industry standard in the field:
1. respectively placing T1, T2 and T3 in a test box, wherein the test box can display the bottom of the box, namely the temperature change of the light source assembly;
2. the power supply is respectively switched on according to rated input voltage by T1, T2 and T3, and a power switch is arranged outside the test box;
3. keeping the three test boxes in the same room temperature environment at 25 ℃;
4. the power is turned on for the first time, and the light is continuously emitted for 1min, which is marked as t1; turning off the power supply, continuously turning on the power supply, and continuously emitting light for 10min, wherein the time is t2; continuously repeating the above operation, and continuously emitting light for 30min, wherein the time is t3; continuously emitting light for 2h, which is denoted as t4, continuously emitting light for 6h, which is denoted as t5, and continuously emitting light for 12h, which is denoted as t6; the light emission was continued for 15 hours, and the temperature was recorded for each period of time of the light emission as t 7.
Temperature (temperature) TD1 TB2 TS3
t1 25℃ 25℃ 25℃
t2 26.3℃ 26.3℃ 25.8℃
t3 27.1℃ 27.4℃ 26.2℃
t4 31.7℃ 29℃ 26.5℃
t5 40.1℃ 38.7℃ 32℃
t6 47.9℃ 47.2℃ 34.6℃
t7 52.6℃ 51℃ 40.6℃
(the above test experiment was repeated five times and the temperature was averaged five times)
Compared with the comparative example, the light source component manufactured by the embodiment works for the same working time, especially for more than 6 hours, and compared with the prior art, the temperature of the light source component is obviously reduced, the light efficiency is higher under the same condition, the light source component can reduce the light attenuation effect caused by overhigh temperature in the working process, and the service life is longer.
In the embodiment, the production process is low in control difficulty and high in yield, the production cost can be reduced, the reflection enhancing film, the metal layer and the shading layer are formed on the rigid circuit substrate, all film layers on the front surface of the light emitting unit on the rigid circuit substrate are removed, and the reflection enhancing film, the metal layer and the shading layer are still reserved on the surfaces of the two sides of the light emitting unit. The shading layer is not limited by the flatness of the circuit substrate, dead angle-free coverage is achieved, the uniformity of the formed shading layer is higher, and chromaticity difference of the shading layer is avoided. The light-emitting unit detects the light emitted from the light surface, expands the diffusion angle through reflection of the reflection increasing film, and reflects the light to the light-emitting unit in the positive direction through the metal layers on the two sides of the light-emitting unit, so that the vertical brightness of the light-emitting unit is improved, the light utilization efficiency is improved, the light-emitting efficiency of each light-emitting unit can be ensured, and the display effect of the Mini LED backlight module using the light source assembly is improved.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.

Claims (12)

1. A light source subassembly for Mini LED backlight unit, its characterized in that includes:
the light-emitting device comprises a circuit substrate, a light-emitting unit, a reflection enhancing film layer, a metal layer and a shading layer;
a plurality of light emitting units arranged on the front surface of the circuit substrate;
plating a reflection enhancing film layer on the front surface of the circuit substrate and the surface of the light-emitting unit;
plating a metal layer on the surface of the reflection increasing film in a direction away from the circuit substrate;
plating a shading layer on the surface of the metal layer to form a shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit;
removing the shading layer, the metal layer and the reflection enhancing film layer on the surface of the positive light emitting surface of the light emitting unit, wherein the positive light emitting surface of the light emitting unit is the surface of the light emitting unit, which is far away from the circuit substrate and parallel to the circuit substrate;
at least a part of the light emitting surface of the light emitting unit, which is at least partially removed from the light shielding layer and the metal layer, is in a light transmission state.
2. The antireflection film layer of claim 1, comprising at least one each of a high refractive index film layer and a low refractive index film layer.
3. The antireflective film layer according to claim 2, wherein the total thickness of the antireflective film layer is 100-600nm.
4. The metal layer according to claim 1, wherein the material of the metal layer is selected from silver, aluminum, zinc or any combination thereof.
5. The metal layer according to claim 4, wherein the total thickness of the metal layer is 10-200nm.
6. The light shielding layer of claim 1, wherein the substrate is at least one of an oxide, a silicide, and a nitride.
7. The method for manufacturing a light source assembly for a Mini LED backlight module according to claim 1, wherein the light shielding layer, the metal layer and the reflection enhancing film layer on the surface of the front light emitting surface of the light emitting unit are removed in the following states:
the shading layer, the metal layer and the reflection enhancing film layer on the surface of the positive light emitting surface of the light emitting unit are all removed;
or (b)
The shading layer and the metal layer on the surface of the positive light emitting surface of the light emitting unit are all removed, and a part of the reflection enhancing film layer is removed;
or (b)
And the shading layer and the metal layer on the surface of the positive light emitting surface of the light emitting unit are all removed.
8. A manufacturing method of a light source component for a Mini LED backlight module is characterized in that,
a plurality of light-emitting units are arranged on the front surface of the circuit substrate;
plating a reflection enhancing film layer on the front surface of the circuit substrate and the surface of the light-emitting unit;
plating a metal layer on the surface of the reflection increasing film in a direction away from the circuit substrate;
sputtering black base material molecules on the surface of the metal layer to form a shading layer covered on the front surface of the circuit substrate and the surface of each light emitting unit;
removing the shading layer, the metal layer and the reflection enhancing film layer on the surface of the positive light emitting surface of the light emitting unit, and enabling the positive light emitting surface of the light emitting unit to be the surface, far away from the circuit substrate, of the light emitting unit and parallel to the circuit substrate;
at least a part of the light emitting surface of the light emitting unit, which is at least partially removed from the light shielding layer and the metal layer, is in a light transmission state.
9. The method for manufacturing the light source assembly for the Mini LED backlight module according to claim 8, wherein the front surface of the circuit substrate and the surface of the light emitting unit are plated with the antireflection film layer in a plating mode comprising: one or more of magnetron sputtering, vacuum evaporation, vacuum sputtering and arc ion plating.
10. The method of claim 8, wherein a metal layer is coated on the surface of the reflection enhancing film in a direction away from the circuit substrate,
the plating method comprises the following steps: one or more of magnetron sputtering, vacuum evaporation, vacuum sputtering and arc ion plating.
11. The method for manufacturing the light source assembly for the Mini LED backlight module according to claim 8, wherein base material molecules are sputtered on the surface of the metal layer in a magnetron sputtering method.
12. The method for manufacturing a light source assembly for a Mini LED backlight module according to claim 8, wherein at least a portion of the light shielding layer and the metal layer are removed, the removing method comprising: one or more of laser etching, grinding, plasma etching.
CN202211612359.5A 2022-12-15 2022-12-15 Light source assembly for Mini LED backlight module and manufacturing method thereof Pending CN116224650A (en)

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