CN116216703A - Patterning device and method based on atomic force microscope - Google Patents
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- 238000000059 patterning Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 153
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 152
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000000523 sample Substances 0.000 claims abstract description 71
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 46
- 239000007789 gas Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000006555 catalytic reaction Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 229910052697 platinum Inorganic materials 0.000 description 9
- 238000006722 reduction reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000263 scanning probe lithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/22—Electronic properties
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
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Abstract
The invention provides a patterning device and a patterning method based on an atomic force microscope, which are used for preparing graphene patterns, wherein the patterning method comprises the following steps: providing a graphene oxide layer; providing an atomic force microscope and an ultraviolet laser, wherein the atomic force microscope is provided with a probe, and the tip of the probe is provided with a titanium dioxide layer; the titanium dioxide layer on the probe and the ultraviolet light beam emitted by the ultraviolet laser simultaneously act on the graphene oxide layer in the same area, so that the graphene oxide in the area is reduced to graphene, and a graphene pattern is formed. According to the invention, the graphene oxide is efficiently reduced by adopting the ultraviolet light catalysis of the titanium dioxide, and the probe provided with the titanium dioxide layer can be used as a consumable material by utilizing the characteristics of low cost and simple preparation of the titanium dioxide material, so that the method is applied to industrial mass production for preparing graphene patterns from the graphene oxide layer, and has a good practical value.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a patterning device and method based on an atomic force microscope.
Background
Graphene has high carrier mobility and is one of the best choices of future electronic device building materials. The graphene oxide is very easy to obtain and low in cost, so that the graphene oxide is used as a raw material to prepare the graphene, and the graphene oxide is one of schemes with great economic value.
The nanometer handwriting scanning probe photoetching technology is one kind of atomic force microscope based patterning technology, and can utilize probe to prepare micron scale to nanometer scale pattern directly on the film layer. At present, metal platinum is plated at the tip of a probe, and nano-handwriting scanning probe lithography technology is adopted to reduce graphene oxide with low conductivity into graphene with high conductivity by utilizing the catalysis of the metal platinum. However, platinum is used as noble metal, and has high material cost and certain requirement on platinum purity, so that the platinum-plated probe has high cost, and the method is difficult to apply to industrial mass production.
Disclosure of Invention
The invention aims to provide a patterning device and a patterning method based on an atomic force microscope, which reduce the cost for preparing graphene patterns from graphene oxide.
In order to solve the technical problems, the patterning method based on an atomic force microscope provided by the invention is used for preparing graphene patterns and comprises the following steps:
providing a graphene oxide layer;
providing an atomic force microscope and an ultraviolet laser, wherein the atomic force microscope is provided with a probe, and the tip of the probe is provided with a titanium dioxide layer;
and the titanium dioxide layer on the probe and the ultraviolet light beam emitted by the ultraviolet laser simultaneously act on the graphene oxide layer in the same area, so that graphene oxide in the area is reduced to graphene, and the graphene pattern is formed.
Optionally, the graphene oxide layer is in a reducing gas environment when the graphene pattern is prepared.
Optionally, the reducing gas comprises hydrogen.
Optionally, the titanium dioxide layer on the tip of the probe forms a contact on the graphene oxide layer, the ultraviolet laser emits ultraviolet laser to the contact on the graphene oxide layer and forms a light spot on the graphene oxide layer, the contact and the light spot have a superposition area, and the graphene oxide layer is moved to form the graphene pattern on the graphene oxide layer.
Optionally, the probe moves on the graphene oxide layer in a continuous scribing manner to form the graphene pattern, or the probe moves on the graphene oxide layer in a knocking manner to form the graphene pattern.
Optionally, the width of the overlapping area of the contact and the light spot is used as the minimum line width of the graphene pattern, and the minimum line width is smaller than the width of the probe tip.
Optionally, the minimum line width is 10 nm to 80 nm.
Optionally, controlling the power of the ultraviolet light beam and/or the movement rate of the overlapping region to adjust the conductivity of the graphene pattern.
According to another aspect of the present invention, there is also provided a patterning device based on an atomic force microscope, for preparing a graphene pattern, including:
the atomic force microscope is provided with an objective table and a probe, wherein the objective table is used for bearing a graphene oxide layer, the tip of the probe is provided with a titanium dioxide layer, and the titanium dioxide layer is contacted with the graphene oxide layer;
an ultraviolet laser for emitting an ultraviolet beam toward the graphene oxide layer;
and the titanium dioxide layer on the probe and the ultraviolet light beam emitted by the ultraviolet laser simultaneously act on the graphene oxide layer in the same area, so that graphene oxide in the area is reduced into graphene, and the graphene pattern is formed.
Optionally, the titanium dioxide layer covers an outer wall of the probe.
In summary, the patterning device provided by the invention is based on an atomic force microscope, an ultraviolet laser is arranged and a titanium dioxide layer is arranged at the tip of a probe of the atomic force microscope, and when titanium dioxide and an ultraviolet beam simultaneously act on the graphene oxide layer in the same area, the graphene oxide layer in the area is reduced to graphene by utilizing the ultraviolet catalytic action of titanium dioxide, and a graphene pattern is formed by the relative movement of the graphene oxide layer relative to the probe and the ultraviolet laser. In the reduction reaction and the patterning process, the graphene oxide is efficiently reduced by adopting the ultraviolet light catalysis of the titanium dioxide, and the probe with the titanium dioxide layer at the tip can be used as a consumable material by utilizing the characteristics of low cost and simple preparation of the titanium dioxide material, so that the cost of preparing the graphene pattern from the graphene oxide is reduced, and the method is applied to industrial mass production of preparing the graphene pattern from the graphene oxide layer and has better practical value.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation on the scope of the invention.
Fig. 1 is a schematic diagram of a patterning device based on an atomic force microscope according to a first embodiment.
Fig. 2 is a schematic writing diagram of a patterning device based on an atomic force microscope according to the first embodiment.
Fig. 3 is a flowchart of a patterning method based on an atomic force microscope according to the second embodiment.
In the accompanying drawings:
10-probe; 11-a titanium dioxide layer; a 20-UV laser; 30-graphene oxide layer; 40-objective table; 50-cantilever; 60-a three-dimensional moving part; 31-contacts; 32-facula; 33-overlap region.
Detailed Description
The invention will be described in further detail with reference to the drawings and the specific embodiments thereof in order to make the objects, advantages and features of the invention more apparent. It should be noted that the drawings are in a very simplified form and are not drawn to scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments.
As used in this disclosure, the singular forms "a," "an," and "the" include plural referents, the term "or" are generally used in the sense of comprising "and/or" and the term "several" are generally used in the sense of comprising "at least one," the term "at least two" are generally used in the sense of comprising "two or more," and the term "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying any relative importance or number of features indicated. Thus, a feature defining "a first", "a second", and "a third" may include one or at least two of the feature, either explicitly or implicitly, unless the context clearly dictates otherwise.
Example 1
An embodiment provides a patterning device based on an atomic force microscope.
Fig. 1 is a schematic diagram of a patterning device based on an atomic force microscope according to a first embodiment.
As shown in fig. 1, the patterning device based on an atomic force microscope provided in this embodiment is used for preparing a graphene pattern, and includes an atomic force microscope and an ultraviolet laser 20, where the atomic force microscope has a stage 40 and a probe 10. Stage 40 is for carrying graphene oxide layer 30; the tip of the probe 10 is provided with a titanium dioxide layer 11, and the titanium dioxide layer 11 is contacted with the graphene oxide layer 30; the ultraviolet laser 20 is used to emit an ultraviolet light beam toward the graphene oxide layer 30. The titanium dioxide layer 11 on the probe 10 and the ultraviolet light beam emitted by the ultraviolet laser 20 simultaneously act on the graphene oxide layer 30 in the same area, so that graphene oxide in the area forms graphene, and a graphene pattern is formed.
With continued reference to fig. 1, the atomic force microscope provided in the present embodiment further includes a cantilever 50 and a three-dimensional moving member 60. Cantilever 50 is provided above stage 40, connected to probe 10, and controls probe 10 to contact graphene oxide layer 30 by cantilever 50, and detects graphene oxide layer 30; the three-dimensional moving member 60 is connected to the stage 40 and disposed below the stage 40 for controlling the three-dimensional movement of the stage 40 relative to the probe 10. Of course, the atomic force microscope of the patterning device of the present embodiment also includes other components not shown, such as a console and a display.
Under the control of cantilever 50, probe 10 contacts graphene oxide layer 30 to act on graphene oxide layer 30, forming contact 31 on graphene oxide layer 30. That is, the tip of the probe 10 is in contact with the graphene oxide layer 30 through the titanium oxide layer 11, and may be perpendicular to the surface of the graphene oxide layer 30, for example. Referring to fig. 2, the ultraviolet laser 20 emits (e.g. obliquely emits) an ultraviolet beam to the contact 31 and forms a light spot 32 on the graphene oxide layer 30, and the light spot 32 is at least partially overlapped with the contact 31 (has an overlapped region 33), so that the graphene oxide of the overlapped region 33 is catalytically reduced to graphene by titanium dioxide under the conditions of ultraviolet irradiation and a reducing atmosphere, and a high-conductivity graphene pattern is formed on the graphene oxide layer 30 by relatively moving the graphene oxide layer 30, the graphene oxide is reduced to graphene, and the purpose of patterning is achieved at the same time. In this embodiment, the three-dimensional moving component 60 is connected to the stage 40, and the stage 40 is moved to drive the graphene oxide layer 30 thereon to move so as to reduce and pattern the graphene oxide. In the example of the patterning device, the three-dimensional moving member 60 may be connected to the cantilever 50 and the ultraviolet laser 20, that is, the cantilever 50 and the ultraviolet laser 20 may be moved synchronously to drive the overlapping region 33 to move on the graphene oxide layer 30 so as to implement reduction and patterning of the graphene oxide.
In this embodiment, although titanium dioxide is not consumed by the reaction in the reduction reaction of graphene oxide as a catalyst (one of the catalytic conditions), the probe 10 having the titanium dioxide layer 11 at the tip is worn out in the above-described interaction (contact), that is, the probe 10 having the titanium dioxide layer 11 at the tip is used as "consumable material", titanium dioxide is a common material widely used, and the cost of the material is low and the preparation is simple, even if it is used as "consumable material" in this embodiment, the cost of the probe 10 having the titanium dioxide layer 11 plated at the tip is low, which is advantageous for applying this embodiment to industrial mass production. Moreover, in preparing the above-described probe 10, the titanium oxide layer 11 may be coated on the entire outer wall of the probe 10 by a plating process (e.g., a sputtering process), and the operation thereof is simplified as compared with the case of coating only the tip of the probe 10.
In particular, in the present embodiment, the area of the overlapping region 33 (only partially overlapping) of the contact 31 and the spot 32 can be controlled by adjusting the relative positions of the probe 10 and the uv beam, so as to control the minimum line width in the reduction reaction and the patterning process, to achieve higher definition patterning with a smaller line width, and to achieve high rate patterning with a wider line width. Of course, in a preferred embodiment, the contact 31 and spot 32 overlap region 33 can be adjusted by adjusting the planar position of the UV laser or the angle at which the UV beam is generated. It should be understood that when the platinum plated probe 10 is used, the line width of the platinum plated probe 10 is fixed to the tip size of the probe 10 during the reduction reaction and patterning, so that not only the line width of the platinum plated probe cannot be adjusted to cope with the situations of different line width requirements, but also the minimum line width of the platinum plated probe 10 is limited to the tip size of the probe 10, and the minimum line width of the platinum plated probe is difficult to meet the application situations of partial high precision.
In addition, the conductivity of the graphene pattern can be adjusted by controlling the power of the ultraviolet light beam (the ultraviolet laser 20) and/or the moving speed of the overlapping region 33 (the writing speed of the probe 10, i.e. the reaction time of the overlapping region 33), and in a certain range, the longer the reaction time of the graphene oxide with the titanium dioxide layer 11 and the ultraviolet light, the higher the reduction rate of the graphene oxide, and the higher the conductivity thereof.
In an example, the tip of the probe 10 is, for example, cylindrical with a diameter of 80 nm, and the minimum line width in forming the graphene pattern may be 10 nm to 80 nm, and to form a conductivity higher than 10 4 S/m graphene pattern.
In addition, when the graphene oxide layer 30 is moved to form a graphene pattern on the graphene oxide layer 30, the probe 10 may be relatively moved on the graphene oxide layer 30 in a continuous scribing manner or the probe 10 may be relatively moved on the graphene oxide layer 30 in a knocking manner. The scribing method is adopted for moving, the moving speed is higher, the patterning efficiency is improved, and the surface morphology of the formed graphene pattern is slightly influenced; the knocking mode is adopted for movement, so that the influence on the formed graphene pattern is reduced, but the movement rate is low, and the patterning efficiency is not facilitated.
Example two
The second embodiment provides a patterning method based on an atomic force microscope.
Fig. 3 is a flowchart of a patterning method based on an atomic force microscope according to the second embodiment.
As shown in fig. 3, the patterning method based on an atomic force microscope provided in this embodiment is used for preparing a graphene pattern, and includes:
s01: providing a graphene oxide layer;
s02: providing an atomic force microscope and an ultraviolet laser, wherein the atomic force microscope is provided with a probe, and the tip of the probe is provided with a titanium dioxide layer;
s03: and the titanium dioxide layer on the probe and the ultraviolet light beam emitted by the ultraviolet laser simultaneously act on the graphene oxide layer in the same area, so that graphene oxide in the area forms graphene, and the graphene pattern is formed.
Next, a patterning method by an atomic force microscope will be described in detail.
First, step S01 is performed to provide a graphene oxide layer.
The graphene oxide layer may be formed on a substrate using a suitable process, which may include any suitable base known to those skilled in the art, for example, at least one of the materials mentioned below: silicon, glass, quartz, plastics, and the like. And a film layer or a structure matched with the manufacturing process of the substrate can be further arranged on the substrate, the graphene oxide layer covers the film layer or the structure, and a graphene pattern (conductive pattern) is formed by using the graphene oxide layer.
Next, step S02 is performed to provide an atomic force microscope and an ultraviolet laser, the atomic force microscope having a probe, the tip of the probe being provided with a titanium dioxide layer.
The patterning device based on the atomic force microscope provided in this embodiment may include an atomic force microscope and an ultraviolet laser, where the atomic force microscope may include an objective table, a probe, and the like, and the specific structure and corresponding arrangement of the reference embodiment are not described herein. In this embodiment, the atomic force microscope and the ultraviolet laser are taken as two co-operating components to form the patterning device together, and in other examples, the ultraviolet laser may be taken as a component of the atomic force microscope to form the patterning device.
Next, step S03 is performed, where the titanium dioxide layer on the probe and the ultraviolet beam emitted by the ultraviolet laser simultaneously act on the graphene oxide layer in the same region, so that the graphene oxide in the region forms graphene, and a graphene pattern is formed thereby.
In the above reaction for reducing graphene oxide, the substrate covered with the graphene oxide layer is placed on the carrying table, and the graphene oxide layer and the probe are in a reducing gas environment, i.e. the carrying table or the whole patterning device is placed in a cavity (chamber) filled with a reducing gas. The reducing gas may include hydrogen. The specific process of performing the reduction reaction and patterning can be referred to as embodiment one, and will not be described herein.
In summary, the patterning device provided by the invention is based on an atomic force microscope, an ultraviolet laser is arranged and a titanium dioxide layer is arranged at the tip of a probe of the atomic force microscope, and when titanium dioxide and an ultraviolet beam simultaneously act on the graphene oxide layer in the same area, the graphene oxide layer in the area is reduced to graphene by utilizing the ultraviolet catalytic action of titanium dioxide, and a graphene pattern is formed by the relative movement of the graphene oxide layer relative to the probe and the ultraviolet laser. In the reduction reaction and the patterning process, the titanium dioxide ultraviolet light catalysis is adopted to reduce the graphene oxide efficiently, and the probe with the titanium dioxide layer at the tip can be used as a consumable material by utilizing the characteristics of low cost and simple preparation of the titanium dioxide material, so that the cost of preparing the graphene pattern from the graphene oxide is reduced, and the method is applied to industrial mass production of preparing the graphene pattern from the graphene oxide layer and has better practical value.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (10)
1. An atomic force microscope-based patterning method for preparing a graphene pattern, comprising the steps of:
providing a graphene oxide layer;
providing an atomic force microscope and an ultraviolet laser, wherein the atomic force microscope is provided with a probe, and the tip of the probe is provided with a titanium dioxide layer;
and the titanium dioxide layer on the probe and the ultraviolet light beam emitted by the ultraviolet laser simultaneously act on the graphene oxide layer in the same area, so that graphene oxide in the area is reduced to graphene, and the graphene pattern is formed.
2. The atomic force microscope based patterning method according to claim 1, wherein the graphene oxide layer is in a reducing gas environment when preparing the graphene pattern.
3. The atomic force microscope based patterning method according to claim 2, wherein the reducing gas comprises hydrogen.
4. The atomic force microscope based patterning method according to claim 1, wherein the titanium dioxide layer on the tip of the probe forms a contact on the graphene oxide layer, the ultraviolet laser emits ultraviolet laser light to the contact on the graphene oxide layer and forms a spot on the graphene oxide layer, the contact and the spot have overlapping areas, and the graphene oxide layer is moved to form the graphene pattern on the graphene oxide layer.
5. The atomic force microscope based patterning method according to claim 4, wherein the probe is moved in a continuous scribe line manner on the graphene oxide layer to form the graphene pattern, or the probe is moved in a tap manner on the graphene oxide layer to form the graphene pattern.
6. The atomic force microscope based patterning method according to claim 4, wherein a width of a region where the contact and the spot overlap is a minimum line width of the graphene pattern, the minimum line width being smaller than a width of the probe tip.
7. The atomic force microscope based patterning method according to claim 6, wherein the minimum line width is 10 nm to 80 nm.
8. The atomic force microscope based patterning method according to claim 4, wherein the power of the ultraviolet light beam and/or the movement rate of the overlap region is controlled to adjust the conductivity of the graphene pattern.
9. An atomic force microscope-based patterning device for preparing graphene patterns, comprising:
the atomic force microscope is provided with an objective table and a probe, wherein the objective table is used for bearing a graphene oxide layer, the tip of the probe is provided with a titanium dioxide layer, and the titanium dioxide layer is contacted with the graphene oxide layer;
an ultraviolet laser for emitting an ultraviolet beam toward the graphene oxide layer;
and the titanium dioxide layer on the probe and the ultraviolet light beam emitted by the ultraviolet laser simultaneously act on the graphene oxide layer in the same area, so that graphene oxide in the area is reduced into graphene, and the graphene pattern is formed.
10. The atomic force microscope based patterning device according to claim 9, wherein the titanium dioxide layer covers an outer wall of the probe.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243100A (en) * | 2011-04-20 | 2011-11-16 | 东南大学 | Detector and detection method for ultraviolet irradiation dose |
| CN105313400A (en) * | 2014-06-06 | 2016-02-10 | 纳米及先进材料研发院有限公司 | Reduced-graphene oxide circuit and preparation method thereof |
| CN106732504A (en) * | 2016-12-26 | 2017-05-31 | 成都理工大学 | The preparation method and application of Graphene optically catalytic TiO 2 composite |
| CN106985213A (en) * | 2017-04-28 | 2017-07-28 | 沈阳工业大学 | Utilize the method and apparatus of the accurate controllable cutting graphite alkene band of photocatalytic oxidation |
-
2023
- 2023-03-09 CN CN202310226813.1A patent/CN116216703A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243100A (en) * | 2011-04-20 | 2011-11-16 | 东南大学 | Detector and detection method for ultraviolet irradiation dose |
| CN105313400A (en) * | 2014-06-06 | 2016-02-10 | 纳米及先进材料研发院有限公司 | Reduced-graphene oxide circuit and preparation method thereof |
| CN106732504A (en) * | 2016-12-26 | 2017-05-31 | 成都理工大学 | The preparation method and application of Graphene optically catalytic TiO 2 composite |
| CN106985213A (en) * | 2017-04-28 | 2017-07-28 | 沈阳工业大学 | Utilize the method and apparatus of the accurate controllable cutting graphite alkene band of photocatalytic oxidation |
Non-Patent Citations (1)
| Title |
|---|
| EMMY J. RADICH ET AL.，: "Is Graphene a Stable Platform for Photocatalysis? Mineralization of Reduced Graphene Oxide With UV-Irradiated TiO2 Nanoparticles", 《CHEMISTRY OF MATERIALS》, vol. 26, 21 July 2014 (2014-07-21), pages 4662 * |
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