CN116207189A - Transient substrate assembly and preparation method thereof - Google Patents

Transient substrate assembly and preparation method thereof Download PDF

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Publication number
CN116207189A
CN116207189A CN202111443480.5A CN202111443480A CN116207189A CN 116207189 A CN116207189 A CN 116207189A CN 202111443480 A CN202111443480 A CN 202111443480A CN 116207189 A CN116207189 A CN 116207189A
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China
Prior art keywords
light emitting
substrate
layer
emitting chip
supporting layer
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CN202111443480.5A
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Chinese (zh)
Inventor
马非凡
曹进
戴广超
张雪梅
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Priority to CN202111443480.5A priority Critical patent/CN116207189A/en
Publication of CN116207189A publication Critical patent/CN116207189A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

According to the transient substrate assembly and the preparation method thereof, the supporting layer is arranged on the second substrate, and the plurality of mutually isolated accommodating cavities are arranged in the supporting layer, so that the luminous chips are arranged in each accommodating cavity, and the moving range of the luminous chips can be restrained in the accommodating cavity by the accommodating cavities because the luminous chips are arranged in the accommodating cavities of the supporting layer, and the moving range of the luminous chips is ensured to be within the allowable range of process errors in the process of moving the transient substrate assembly, so that the success rate of luminous chip transfer is improved, and the yield of luminous chip transfer is improved.

Description

Transient substrate assembly and preparation method thereof
Technical Field
The invention relates to the field of light emitting chips, in particular to a transient substrate assembly and a preparation method thereof.
Background
Because the light-emitting diode has the advantages of energy conservation, environmental protection, long service life and the like, the light-emitting diode possibly replaces traditional lighting fixtures such as incandescent lamps, fluorescent lamps and the like and enters into thousands of households after the next few years.
The micro light emitting diode is a novel display technology, has the advantages of high brightness, low delay, long service life, wide viewing angle and high contrast ratio, and is the development direction of the light emitting diode at present. In the current production process of micro light emitting diodes, a chip transferring process exists, in which a large number of light emitting chips need to be peeled off and transferred from a substrate, and the peeled off and transferred light emitting chips can be adhered to a designated circuit.
In the current light-emitting chip transferring process, as the light-emitting chip needs to be transferred from one substrate to another substrate, the position of the chip is easily changed in the peeling and transferring process, so that the yield of the light-emitting chip is lower. Therefore, how to improve the yield of the light emitting chip in the transfer process is a problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a transient substrate assembly and a method for manufacturing the same, which aims to solve the problem of low yield of light emitting chips in the transfer process in the related art.
The invention provides a transient substrate assembly, comprising:
a second substrate;
the supporting layer is fixedly arranged on the second substrate and is provided with a plurality of mutually isolated accommodating cavities and at least one opening penetrating through the top surface and the bottom surface of the accommodating cavities, and the cavity openings of the accommodating cavities are far away from the second substrate;
the light-emitting chips are respectively arranged in the accommodating cavities, are positioned at the bottoms of the accommodating cavities and are attached to the supporting layer, and a gap is reserved between the side surfaces of the light-emitting chips and the inner side walls of the accommodating cavities.
Above-mentioned transient state base plate subassembly is provided with the supporting layer on the second base plate, still has a plurality of holding cavities of mutual isolation in the supporting layer simultaneously, has all placed the luminescence chip in every holding cavity, because the luminescence chip is placed in the holding cavity of supporting layer, holds the cavity and can restrict the range of movement of luminescence chip in holding the intracavity, guarantees the range of movement of luminescence chip at the range of allowance content of process error at the process of removing transient state base plate subassembly to the success rate that luminescence chip shifted has been improved, the yield that luminescence chip shifted has been improved.
Based on the same inventive concept, the present application further provides a method for preparing the transient substrate assembly, which includes: the array substrate assembly prepared by the preparation method;
providing a second substrate;
fixing the second substrate and a supporting layer, wherein the supporting layer is provided with a plurality of mutually isolated accommodating cavities, the fixing surfaces of the supporting layer and the second substrate are far away from the cavity openings of the accommodating cavities, and the supporting layer is also provided with at least one opening penetrating through the top surface and the bottom surface of the supporting layer;
the light-emitting chip is placed in the accommodating cavity, the light-emitting chip is located at the bottom of the accommodating cavity and attached to the supporting layer, and a gap is reserved between the side face of the light-emitting chip and the inner side wall of the accommodating cavity.
According to the transient substrate assembly prepared by the preparation method, the supporting layer is fixedly arranged on the second substrate, meanwhile, the supporting layer is provided with the plurality of mutually isolated accommodating cavities, and the light-emitting chips are placed in each accommodating cavity.
Optionally, the fixing the second substrate on the corresponding back surface of the cavity mouth of the accommodating cavity of the supporting layer further includes:
and removing the sacrificial layer between the supporting layer and the light emitting chip and between the supporting layer and the first substrate, wherein the sacrificial layer completely isolates the supporting layer from the light emitting chip and the first substrate.
The sacrificial layer between the supporting layer and the light-emitting chip and between the sacrificial layer and the first substrate are removed before the second substrate and the supporting layer are fixed, the purpose of arranging the sacrificial layer is to protect the light-emitting chip below the supporting layer when the supporting layer is generated, meanwhile, a specific structure can be formed on the supporting layer by processing the surface of the sacrificial layer, and meanwhile, the sacrificial layer also plays a buffering role, so that the light-emitting chip can be better protected in the moving process.
Drawings
Fig. 1 is a schematic structural diagram of an array substrate assembly according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another array substrate assembly according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another array substrate assembly according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a transient substrate assembly according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another exemplary substrate assembly according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of another exemplary substrate assembly according to an embodiment of the present invention;
fig. 7 is a schematic flow chart of a method for preparing a transient substrate assembly according to an embodiment of the present application;
FIG. 8 is a schematic diagram of steps in a process for fabricating a transient substrate assembly according to another embodiment of the present disclosure, which is further included before the sacrificial layer is removed;
fig. 9 is a schematic product step diagram of a schematic process step diagram further included before the sacrificial layer is removed in the method for manufacturing a temporary another transient substrate assembly according to the embodiment of the present application;
fig. 10 is a schematic diagram of product steps corresponding to each step of a method for manufacturing a transient substrate assembly according to an embodiment of the present application.
Reference numerals illustrate:
110-first substrate, 120-light emitting chip, 121-electrode, 130-sacrificial layer, 131-groove, 140-supporting layer, 141-sidewall, 142-accommodating cavity, 150-opening, 151-first opening, 152-second opening, 210-second substrate.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the related art, with the development of Mini LED and Micro LED technologies, the manufactured LED light emitting chips 120 become smaller and smaller, and simultaneously the number of light emitting chips 120 manufactured becomes larger and larger, so that the requirements for the precision, safety, and transfer yield of manufacturing and transferring the light emitting chips 120 become higher and higher.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The present embodiment provides an array substrate assembly, which is applied in manufacturing a micro-scale light emitting chip 120, such as a Mini LED chip or a mico LED chip, and can also be used in manufacturing a common size LED chip or a large size LED chip larger than 50 micrometers, which is an intermediate assembly for manufacturing the above-mentioned LED chip, and is also an optional intermediate assembly generated in the process of manufacturing a transient substrate assembly provided in the present application.
Referring to fig. 1, a schematic partial cross-sectional view of an array substrate assembly in this embodiment includes: a first substrate 110; a plurality of light emitting chips 120 disposed on the first substrate 110; a sacrificial layer 130 disposed on the first substrate 110 and covering each of the light emitting chips 120, wherein a groove 131 is formed between adjacent light emitting chips 120 on the sacrificial layer 130; and a supporting layer 140 disposed on the first substrate 110 and covering the sacrificial layer 130, wherein the supporting layer 140 at least partially fills the recess 131, and at least one opening 150 communicating with the sacrificial layer 130 is formed on the supporting layer 140.
In the present embodiment, the first substrate 110 is used to mount the light emitting chip 120, wherein the first substrate 110 may optionally include, but is not limited to, a sapphire substrate, a gallium selenide substrate, and a silicon substrate. A plurality of light emitting chips 120 are fixed on the first substrate 110, and the plurality of light emitting chips 120 are generally arranged on the first substrate 110 in an array manner according to a certain rule, and the light emitting chips 120 in this embodiment include, but are not limited to, light emitting chips 120 which are directly grown on the basis of the first substrate 110 by transferring the light emitting chips 120 onto the first substrate 110.
In the present embodiment, the types of the light emitting chips 120 include, but are not limited to, RGB multicolor light emitting chips 120, and single color light emitting chips 120, and two electrodes 121 are typically further included on the light emitting chips 120, and in fig. 1, the electrodes 121 are located at the top of the light emitting chips 120, and in other embodiments, the location of the electrodes 121 includes, but is not limited to, being located at the bottom of the light emitting chips 120 as shown in fig. 3, and may be located at the side of the light emitting chips 120, etc.
In the present embodiment, the sacrificial layer 130 completely covers the first substrate 110 and the light emitting chips 120, the sacrificial layer 130 forms a groove 131 between adjacent light emitting chips 120, and a circle of grooves 131 are formed around each light emitting chip 120, the manner of forming the groove 131 on the sacrificial layer 130 includes, but is not limited to, naturally forming the groove 131 between adjacent chips when depositing the sacrificial layer 130, and forming the groove 131 on the sacrificial layer 130 by etching; in this embodiment, the thickness of the sacrificial layer 130 is required to be able to completely cover the electrode 121 when the electrode 121 of the light emitting chip 120 is located at the top or side.
In this embodiment, the supporting layer 140 completely covers the sacrificial layer 130, the supporting layer 140 is at least partially filled in the area of the groove 131 of the sacrificial layer 130 to form a concave sidewall 141 between the adjacent light emitting chips 120, and the material selected for the supporting layer 140 in this embodiment is different from the material selected for the sacrificial layer 130, and the supporting layer 140 is required to have a certain supporting force and structural strength to protect the light emitting chips 120 and play a role in fixing the positions of the light emitting chips 120. It is to be understood that, in the present embodiment, the sidewall 141 formed by recessing the supporting layer 140 at the position corresponding to the groove 131 includes a solid structure like that of fig. 2 in addition to the hollow structure like that of fig. 1, and the supporting layer 140 does not necessarily need to completely fill the groove 131, but may be partially filled in some cases.
In the present embodiment, there is also an opening 150 in the support layer 140 that communicates with the sacrificial layer 130, and the function of the opening 150 is mainly to drain the residue of the sacrificial layer 130 through the opening 150 when the sacrificial layer 130 is subsequently removed.
In this embodiment, the sacrificial layer 130 may be any one of a photoresist layer, a pyrolytic photoresist layer, and a chemical photoresist layer.
Since the sacrificial layer 130 needs to be removed in a subsequent process, the sacrificial layer 130 is typically an organic glue material that can be selectively removed, and thus the sacrificial layer 130 may be a structural layer with the above characteristics, in which the photolytic layer can be removed under irradiation of electromagnetic waves or rays with a specific wavelength, the photolytic layer can be removed at a specific temperature, and the chemical photoresist layer can be etched away by a specific chemical solvent, or dissolved away by a specific chemical solvent, so as to be removed. It will be appreciated that the selection of sacrificial layer 130 in practical applications requires that the performance of other structures in the assembly be unaffected when sacrificial layer 130 is removed.
In this embodiment, the opening 150 is located in at least one of: first openings 151 of the supporting layer 140 corresponding to the light emitting chips 120; and second openings 152 of the supporting layer 140, which are positioned between adjacent light emitting chips 120.
Referring to fig. 3, the openings 150 on the support layer 140 may be disposed at the first openings 151 above the light emitting chips 120, at the second openings 152 in the gaps between the adjacent light emitting chips 120, or at both positions. It is understood that the first opening 151 is disposed over the light emitting chips 120, which does not mean that the first opening 151 is disposed over all the light emitting chips 120, and in some embodiments, a part of the light emitting chips 120 may be skipped, and the first opening 151 is disposed over the remaining light emitting chips 120; the second openings 152 are provided in the same number and positions, and the second openings 152 do not need to be provided between any adjacent light emitting chips 120.
In this embodiment, the supporting layer 140 corresponding to each light emitting chip 120 has the first opening 151, and the position of the first opening 151 corresponds to the position between the two electrodes 121 of the light emitting chip 120.
When the electrodes 121 of the light emitting chip 120 are positioned at the top or bottom, the preferred position of the first opening 151 is between the two electrodes 121, and thus the first opening 151 can uniformly remove the sacrificial layer 130 when the sacrificial layer 130 is removed, thereby improving the removal speed of the sacrificial layer 130 and reducing the probability of the sacrificial layer 130 remaining. When the electrode 121 of the light emitting chip 120 is located at the top end of the light emitting chip 120, the first opening 151 is generally disposed at a position avoiding the electrode 121 as much as possible, so as to avoid damaging the electrode 121 and affecting the yield.
In this embodiment, the thickness of the sacrificial layer 130 is greater than or equal to 0.1 micrometers and less than or equal to 100 micrometers.
In practical applications, the thickness of the sacrificial layer 130 needs to be determined according to the size of the light emitting chips 120, the spacing between adjacent light emitting chips 120, and the size of the electrode 121, and in some embodiments, the thickness of the sacrificial layer 130 may also be uneven at different locations, for example, the sacrificial layer 130 covering the light emitting chips 120 is thicker, and the sacrificial layer 130 covering the sides of the light emitting chips 120 and the first substrate 110 is thinner. For example, when the thickness of the light emitting chips 120 is 1 micron, the interval between adjacent light emitting chips 120 is 1 micron, the electrode 121 is positioned at the tip and the protrusion thickness is 0.2 micron, the thickness of the sacrificial layer 130 may be set to 0.3 micron to ensure complete coverage of the electrode 121 while the grooves 131 can be formed between the adjacent light emitting chips 120; when the thickness of the light emitting chips 120 is 10 micrometers, the interval between the adjacent light emitting chips 120 is 5 micrometers, the electrode 121 is positioned at the top end and the protrusion thickness is 3 micrometers, the region of the sacrificial layer 130 having the thickness above the light emitting chips 120 may be set to 4 micrometers, and the other region is set to 1.5 micrometers to ensure complete coverage of the electrode 121 while the groove 131 can be formed between the adjacent light emitting chips 120.
The present embodiment provides an array substrate assembly, a first substrate 110; a plurality of light emitting chips 120 disposed on the first substrate 110; a sacrificial layer 130 provided on the first substrate 110 to cover each light emitting chip 120, the sacrificial layer 130 having grooves 131 formed between adjacent light emitting chips 120; the support layer 140 is disposed on the first substrate 110 and covers the sacrificial layer 130, the support layer 140 at least partially fills the recess 131, and at least one opening 150 communicating with the sacrificial layer 130 is formed on the support layer 140. The array substrate assembly provided by the embodiment is provided with the sacrifice layer 130 and the supporting layer 140 layer by layer on the first substrate 110 and the light-emitting chip 120, the sacrifice layer 130 provides buffering, the supporting layer 140 provides supporting and fixing, and the safety of the light-emitting chip 120 in the moving and transporting process of the array substrate assembly is ensured, so that the yield of products is improved. Meanwhile, an opening 150 communicating with the sacrificial layer 130 is formed on the supporting layer 140, so that residues generated when the sacrificial layer 130 is removed later can be removed from the opening 150.
Another alternative embodiment of the invention:
in the related art, with the development of Mini LED and Micro LED technologies, the manufactured LED light emitting chips 120 become smaller and smaller, and simultaneously the number of light emitting chips 120 manufactured becomes larger and larger, so that the requirements for the precision, safety, and transfer yield of manufacturing and transferring the light emitting chips 120 become higher and higher.
In order to achieve the above-mentioned object, the present application provides a transient substrate assembly, which is applied to manufacture micro-sized light emitting chips 120, such as Mini LED chips or Mirco LED chips, and can also be used to manufacture common-sized LED chips or large-sized LED chips larger than 50 micrometers, and is an intermediate assembly for manufacturing the above-mentioned LED chips.
A schematic partial cross-sectional view of a transient substrate assembly in this embodiment is shown in fig. 4, which includes: a second substrate 210; the supporting layer 140 is fixedly arranged on the second substrate 210, the supporting layer 140 is provided with a plurality of mutually isolated accommodating cavities 142 and at least one opening 150 penetrating through the top surface and the bottom surface of the accommodating cavities 142, and the cavity openings of the accommodating cavities 142 are far away from the second substrate 210; the light emitting chips 120 are respectively disposed in the accommodating cavities 142, the light emitting chips 120 are disposed at the bottom of the accommodating cavities 142 and are attached to the supporting layer 140, and a gap is formed between the side surface of the light emitting chip 120 and the inner sidewall 141 of the accommodating cavity 142.
In this embodiment, the second substrate 210 is used to fix the support layer 140, wherein the second substrate 210 may optionally include, but is not limited to, a sapphire substrate, a gallium selenide substrate, and a silicon substrate. The support layer 140 in this embodiment includes, but is not limited to, being transferred onto the second substrate 210 by way of transfer.
In this embodiment, the types of the light emitting chips 120 include, but are not limited to, RGB multicolor light emitting chips 120, and single color light emitting chips 120, and two electrodes 121 are typically further included on the light emitting chips 120, and in fig. 4, the electrodes 121 are located at the bottom of the light emitting chips 120, and in other embodiments, the location of the electrodes 121 includes, but is not limited to, at the top of the light emitting chips 120, at the side of the light emitting chips 120, and so on.
In the present embodiment, the supporting layer 140 is fixed on the second substrate 210, and a plurality of receiving cavities 142 isolated from each other are formed in the supporting layer 140, and the receiving cavities 142 are used for receiving the light emitting chips 120, and at least one opening 150 penetrating the top and bottom surfaces of the supporting layer 140 is further formed in the supporting layer 140. The supporting layer 140 and the accommodating cavity 142 in this embodiment are used for fixing and accommodating the light emitting chip 120, so as to avoid relatively obvious displacement of the light emitting chip 120, and protect the light emitting chip 120, so that the supporting layer 140 is required to have a certain supporting force and structural strength.
In this embodiment, the supporting layer 140 is further provided with a plurality of receiving cavities 142 isolated from each other for receiving the light emitting chips 120, and the light emitting chips 120 are attached to the bottom of the receiving cavities 142 under the action of gravity, and in order to facilitate the light emitting chips 120 to be taken out of the receiving cavities 142, a gap is formed between the side surfaces of the light emitting chips 120 and the inner side walls 141 of the receiving cavities 142. It will be appreciated that the side walls 141 between adjacent receiving chambers 142 may be hollow side walls 141 as in fig. 4 or solid side walls 141 as in fig. 5.
In this embodiment, the opening 150 on the supporting layer 140 belongs to a notch formed by auxiliary processing, and is a through hole formed in the sacrificial layer 130 between the light emitting chip 120 and the supporting layer 140 in the production process, so that the opening needs to penetrate through the top surface and the bottom surface of the supporting layer 140.
In this embodiment, the supporting layer 140 is any one of the following: silicon dioxide layer, silicon nitride layer, metal layer.
In this embodiment, the supporting layer 140 is required to have a certain supporting force and structural strength, so the supporting layer 140 is a structural layer made of the above materials, and it is understood that metals selected from the metal layers include, but are not limited to, metallic copper, metallic aluminum, metallic titanium, and other metal alloys.
In this embodiment, the opening 150 is located in at least one of: a first opening 151 of the supporting layer 140 at the bottom of each of the receiving cavities 142; and second openings 152 of the supporting layer 140, which are positioned between adjacent light emitting chips 120.
Referring to fig. 6, the opening 150 in the support layer 140 may be disposed at a first opening 151 at the bottom of the receiving cavity 142, a second opening 152 in the support layer 140 of the sidewall 141 between adjacent receiving cavities 142, or both. It will be appreciated that the first openings 151 are provided at the bottom of the receiving cavities 142, which does not mean that the first openings 151 are provided at the bottom of all receiving cavities 142, and in some embodiments a portion of the receiving cavities 142 may be skipped and the first openings 151 provided at the bottom of the remaining receiving cavities 142; the second openings 152 are provided in the same number and positions, and it is not necessary to provide the second openings 152 on the side walls 141 between any adjacent accommodating chambers 142.
In this embodiment, the support layer 140 corresponding to the bottom of each of the accommodating cavities 142 has the first opening 151, and the first opening 151 is located between the two electrodes 121 of the light emitting chip 120.
When the electrodes 121 of the light emitting chip 120 are positioned at the top or bottom, the preferred position of the first opening 151 is between the two electrodes 121, and thus the first opening 151 can uniformly remove the sacrificial layer 130 during the step of removing the sacrificial layer 130, thereby improving the removal speed of the sacrificial layer 130 and reducing the probability of the sacrificial layer 130 remaining. It should be noted that, when the electrode 121 of the light emitting chip 120 is located at the bottom of the accommodating cavity 142, the setting position of the first opening 151 will generally avoid the electrode 121 as much as possible, so as to avoid damaging the electrode 121 and affecting the yield.
In this embodiment, the light emitting chip 120 has opposite top and bottom surfaces, the electrode 121 of the light emitting chip 120 is disposed on the bottom surface, and the electrode 121 is attached to the supporting layer 140.
Referring to fig. 4 and 5, the electrode 121 of the light emitting chip 120 is positioned at the bottom surface of the light emitting chip 120, and when the light emitting chip 120 is placed in the receiving cavity 142, the electrode 121 is attached to the bottom of the receiving cavity 142 to contact the support layer 140.
In this embodiment, the light emitting chip 120 has opposite top and bottom surfaces, the electrode 121 of the light emitting chip 120 is disposed on the bottom surface, and the top surface of the light emitting chip 120 is attached to the supporting layer 140, and the distribution of each of the accommodating cavities 142 on the second substrate 210 corresponds to the distribution of the die bonding areas of each chip on the circuit board one by one.
Referring to fig. 6, the electrode 121 of the light emitting chip 120 is positioned on the top surface of the light emitting chip 120, and when the light emitting chip 120 is placed in the receiving cavity 142, the bottom surface of the light emitting chip 120 is attached to the bottom of the receiving cavity 142 to contact the support layer 140. In practical applications, when the light emitting chip 120 is placed in this manner, a circuit board is usually placed directly above the light emitting chip 120 in the subsequent process, so that the light emitting chip 120 is directly fixed and connected to a circuit in a fixed manner, and the light emitting chip 120 is taken out together with the circuit board when die bonding is completed to take out the circuit board, thereby completing the transfer process of the light emitting chip 120.
In this embodiment, the height of the accommodating cavity 142 is equal to or less than the height of the light emitting chip 120.
Referring to fig. 4 to 6, since the temporary substrate assembly is used for temporarily carrying the light emitting chip 120, the light emitting chip 120 in the temporary substrate assembly needs to be transferred to another circuit board in a subsequent production process, so that the height of the accommodating cavity 142 needs to be equal to or greater than the height of the light emitting chip 120 in order to facilitate the transfer of the light emitting chip 120.
The present embodiment provides a transient substrate assembly, comprising: a second substrate 210; the supporting layer 140 is fixedly arranged on the second substrate 210, the supporting layer 140 is provided with a plurality of mutually isolated accommodating cavities 142 and at least one opening 150 penetrating through the top surface and the bottom surface of the supporting layer, and the cavity mouth of the accommodating cavity 142 is far away from the second substrate 210; the light emitting chips 120 are respectively disposed in the accommodating chambers 142, the light emitting chips 120 are disposed at the bottom of the accommodating chambers 142 and are attached to the supporting layer 140, and a gap is formed between the side surfaces of the light emitting chips 120 and the inner side walls 141 of the accommodating chambers 142. In the transient substrate assembly provided in this embodiment, the supporting layer 140 is fixed on the second substrate 210, the plurality of holding cavities 142 isolated from each other are provided in the supporting layer 140, and the light emitting chips 120 are placed in the holding cavities 142, so that the light emitting chips 120 can be prevented from being displaced obviously due to the fixing and constraint of the holding cavities 142, the effect of protecting the light emitting chips 120 is achieved, and meanwhile, the transfer yield of the light emitting chips 120 is improved.
Another alternative embodiment:
in order to facilitate understanding how the transient substrate assembly provided in the embodiments of the present invention is manufactured, the present embodiment provides a method for manufacturing a transient substrate assembly. The preparation method of the transient substrate assembly includes steps, and schematic diagrams of products obtained by the respective steps can be seen in fig. 7 and fig. 10, and the preparation method of the transient substrate assembly includes the steps of:
s701, providing the second substrate 210.
A second substrate 210 is provided, the second substrate 210 is disposed above the support layer 140 of the array substrate assembly, and the second substrate 210 may be the same as or different from the first substrate 110.
S702, fixing the second substrate 210 and the supporting layer 140.
The supporting layer 140 is provided with a plurality of accommodating cavities 142 isolated from each other, the fixing surface of the supporting layer 140 and the second substrate 210 is far away from the cavity mouth of the accommodating cavities 142, the supporting layer 140 also has at least one opening 150 penetrating the top surface and the bottom surface of the supporting layer 140, and the structure of the supporting layer 140 can be seen in fig. 1-6.
S703, placing the light emitting chip 120 in the accommodating chamber 142.
The light emitting chip 120 is located at the bottom of the accommodating cavity 142 and is attached to the supporting layer 140, and a gap is formed between the side surface of the light emitting chip 120 and the inner sidewall 141 of the accommodating cavity 142. The light emitting chip 120 is placed in the accommodating cavity to fix and restrain the light emitting chip 120, and meanwhile, the light emitting chip 120 needs to be taken out of the accommodating cavity 142 in consideration of the following transferring step, so that a certain gap is needed between the light emitting chip 120 and the inner side wall 141 of the accommodating cavity 142, and the light emitting chip 120 is prevented from being damaged in the process of grabbing the light emitting chip 120.
In this embodiment, fixing the second substrate 210 on the back surface of the support layer 140 where the cavity opening of the accommodating cavity 142 is located includes: an adhesive layer is fixed on the second substrate 210; the second substrate 210 is fixed to the support layer 140 by the adhesive layer.
In order to fix the second substrate 210 and the support layer 140 together, it is necessary to perform a process on the second substrate 210 in advance, including but not limited to fixing an adhesive layer on the second substrate 210, and fixing the second substrate 210 and the support layer 140 by adhesion, wherein the manner of forming the adhesive layer includes but is not limited to forming by applying an adhesive layer and forming by adhering a film.
In this embodiment, before fixing the second substrate 210 on the corresponding back surface of the cavity opening of the accommodating cavity 142 of the supporting layer 140, the method further includes: the sacrificial layer 130 between the supporting layer 140 and the light emitting chip 120, and the first substrate 110 is removed, and the sacrificial layer 130 completely isolates the supporting layer 140 from the light emitting chip 120, and the first substrate 110.
The sacrificial layer 130 is removed by selecting a corresponding removal means according to the characteristics of the sacrificial layer 130. For example, when the sacrificial layer 130 is a chemical photoresist layer, the array substrate assembly is soaked in a corresponding chemical solvent, the chemical solvent enters from the opening 150, the sacrificial layer 130 is etched, and residues generated by etching the sacrificial layer 130 are removed through the opening 150. It can be understood that after the sacrificial layer 130 is removed, the supporting layer 140 naturally falls under the action of gravity to be attached to the light emitting chip 120, and the schematic diagram of removing the sacrificial layer 130 can be seen in steps S805 to S806 in fig. 10.
Since the sacrificial layer 130 is disposed between the light emitting chip 120 and the first substrate 110, and the purpose of disposing the sacrificial layer 130 includes protecting the light emitting chip 120 below, the sacrificial layer 130 needs to completely isolate the support layer 140 from the light emitting chip 120, and the first substrate 110.
In the present embodiment, the sacrificial layer 130 is formed with grooves 131 between adjacent light emitting chips 120, and the sidewalls 141 of the receiving cavity 142 are at least partially filled in the grooves 131.
Since the support layer 140 is formed on the sacrificial layer 130, the inner sidewall 141 of the receiving chamber 142 in the support layer 140 may be formed by having the support layer 140 fill the recess 131 by forming the recess 131 on the sacrificial layer 130.
In this embodiment, the thickness of the sacrificial layer 130 is greater than or equal to 0.1 micrometers and less than or equal to 100 micrometers.
In the present embodiment, when the electrode 121 of the light emitting chip 120 is located between the support layer 140 and the light emitting chip 120, the thickness of the sacrificial layer 130 is greater than the protrusion height of the electrode 121.
In order to prevent the supporting layer 140 from contacting the electrode 121 of the light emitting chip 120 during the formation of the supporting layer 140 to cause damage to the light emitting chip 120, therefore, when the electrode 121 of the light emitting chip is located between the supporting layer 140 and the light emitting chip 120, the thickness of the sacrificial layer 130 is greater than the protrusion height of the electrode 121 to ensure complete isolation of the supporting layer 140 from the light emitting chip 120.
In this embodiment, removing the sacrificial layer includes at least one of:
removing the sacrificial layer by irradiation of preset electromagnetic waves;
heating to a preset temperature to remove the sacrificial layer;
and removing the sacrificial layer by using a preset chemical reagent.
Since the sacrificial layer optionally includes, but is not limited to, a photolytic layer, a pyrolytic layer, and a chemical glue layer, the photolytic layer, the pyrolytic layer, and the chemical glue layer may be removed using the methods described above, respectively.
In this embodiment, before removing the sacrificial layer 130, the method further includes:
s801, providing the first substrate 110;
s802, disposing the light emitting chip 120 on the first substrate 110;
s803, forming the sacrificial layer 130 on the light emitting chip 120 and the first substrate 110 on the same surface as the light emitting chip 120;
s804, forming a supporting layer 140 on the sacrificial layer 130;
s805, forming the opening 150 on the support layer 140.
Referring to fig. 8 and 9, in step S801, the first substrate 110 is used to mount the light emitting chip 120, wherein the first substrate 110 may optionally include, but is not limited to, a sapphire substrate, a gallium selenide substrate, and a silicon substrate.
In step S802, a plurality of light emitting chips 120 are fixed on the first substrate 110, and the plurality of light emitting chips 120 are generally arranged on the first substrate 110 in an array manner according to a certain rule, and the light emitting chips 120 in this embodiment include, but are not limited to, light emitting chips 120 transferred onto the first substrate 110 by a transfer manner, and light emitting chips 120 directly grown on the basis of the first substrate 110. The types of the light emitting chips 120 include, but are not limited to, RGB multicolor light emitting chips 120, and single color light emitting chips 120, and the structure and placement relationship of the light emitting chips 120 are not limited to this embodiment.
In step S803, the sacrificial layer 130 needs to completely cover the first substrate 110 and the light emitting chips 120, and the grooves 131 are formed between the adjacent light emitting chips 120, and a circle of grooves 131 is formed around each light emitting chip 120. In order to ensure that the recess 131 can be formed, it is required that the thickness of the sacrificial layer 130 located at the side of the light emitting chip 120 must be less than 1/2 of the gap between the adjacent light emitting chips 120, and the thickness of the sacrificial layer 130 is not limited to other regions, but generally does not exceed 1/2 of the thickness of the light emitting chip 120, and when the electrode 121 of the light emitting chip 120 is located at the top, it is also required that the thickness of the sacrificial layer 130 in the region can completely cover the electrode 121. Because the sacrificial layer 130 may be removed in a subsequent process, the sacrificial layer 130 may optionally include, but is not limited to, a photolytic layer, a pyrolytic layer, and a chemical glue layer; the photoresist layer is made of a photosensitive material, and can be removed by irradiation of light with specific wavelength; the pyrolytic gel layer is made of a thermosensitive material, and can be removed by heating to a preset temperature; the chemical glue layer is made of a material that is capable of being removed by a specific chemical substance.
In step S804, the supporting layer 140 completely covers the sacrificial layer 130, and the supporting layer 140 is at least partially filled in the area of the groove 131 of the sacrificial layer 130 to form a concave sidewall 141 between the adjacent light emitting chips 120, and because the supporting layer 140 protects the light emitting chips 120 and functions to fix the light emitting chips 120, the supporting layer 140 is required to have a certain supporting force and structural strength, the thickness of the supporting layer 140 is not limited, and the required structural strength can be satisfied in this embodiment, and common thicknesses include, but are not limited to, 0.5 micron, 1 micron, 2 micron, 5 micron, etc.
In step S805, since the sacrificial layer 130 needs to be removed in the subsequent process, an opening 150 needs to be formed in the support layer 140, and when the sacrificial layer 130 is removed, the etchant and residues of the sacrificial layer 130 can be introduced and removed through the opening 150. It should be noted that, the position of the opening 150 may be any position of the supporting layer 140, but in order to improve the yield, the damage to the light emitting chip 120 is avoided, and the position of the opening 150 is usually avoided overlapping with the electrode 121 of the light emitting chip 120; the shape of the opening 150 is not particularly limited, and includes, but is not limited to, square, rectangular, circular, etc.; regarding the size of the opening 150, when the opening 150 is provided above the light emitting chips 120, it is required that the size and area thereof be not greater than 1/2 of the size and area of the light emitting chips 120, and when the opening 150 is provided between the adjacent light emitting chips 120, the width of the opening 150 thereof be not greater than the interval between the adjacent light emitting chips 120.
In the present embodiment, the manner of forming the sacrificial layer 130 and the support layer 140 includes, but is not limited to, fabricating the sacrificial layer 130 and the support layer 140 by ion deposition, which can control the thickness of the sacrificial layer 130 and the thickness of the support layer 140 relatively conveniently, and simultaneously, when forming the sacrificial layer 130 and the support layer 140, ion deposition relatively easily covers the gaps between adjacent light emitting chips 120 to form the grooves 131 and the sidewalls 141 filled in the grooves 131.
In this embodiment, the manner of forming the opening 150 on the supporting layer 140 includes: forming an etching pattern on the support layer 140; the opening 150 communicating with the sacrificial layer 130 is etched in the support layer 140 by etching.
Since the supporting layer 140 has a certain supporting property and high structural strength, an etching pattern can be formed on the supporting layer 140 in a patterning manner, and the opening 150 can be etched at a designated position according to the requirement of the etching pattern during etching.
In this embodiment, after the second substrate 210 is fixed on the back surface of the supporting layer 140 where the cavity mouth of the accommodating cavity 142 is located, before the light emitting chip 120 is placed in the accommodating cavity 142, the method further includes: the positions of the first substrate 110 and the second substrate 210 are reversed.
Referring to fig. 9 and 10, the second substrate 210 is fixed to the supporting layer 140, and the direction of the entire assembly is exchanged after the second substrate 210 is coated on the supporting layer 140 in consideration of the subsequent process of peeling the light emitting chip 120 from the first substrate 110 in actual production.
In this embodiment, the placement of the light emitting chip 120 in the accommodating cavity 142 includes: the light emitting chip 120 is peeled off from the first substrate 110.
The light emitting chip 120 on the first substrate 110 is peeled off, and the light emitting chip 120 automatically drops into the receiving cavity 142 of the supporting layer 140 by gravity, where the method of peeling off the light emitting chip 120 includes, but is not limited to, decomposing GaN at the bottom of the light emitting chip 120 using an LLO laser peeling apparatus to peel off it.
As can be seen from the above embodiments, according to the transient substrate assembly and the preparation method thereof provided in the present application, when the light emitting chip 120 is peeled off from the first substrate 110 and then is placed in the accommodating cavity 142 of the supporting layer 140, the accommodating cavity 142 can restrict the displacement of the light emitting chip 120 and fix the light emitting chip 120, so as to avoid the displacement of the light emitting chip 120 during the peeling off, moving and transporting the transient substrate assembly, thereby improving the yield.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.

Claims (10)

1. A transient substrate assembly, comprising:
a second substrate;
the supporting layer is fixedly arranged on the second substrate and is provided with a plurality of mutually isolated accommodating cavities and at least one opening penetrating through the top surface and the bottom surface of the accommodating cavities, and the cavity openings of the accommodating cavities are far away from the second substrate;
the light-emitting chips are respectively arranged in the accommodating cavities, are positioned at the bottoms of the accommodating cavities and are attached to the supporting layer, and a gap is reserved between the side surfaces of the light-emitting chips and the inner side walls of the accommodating cavities.
2. The transient substrate assembly of claim 1, wherein the support layer is any one of: silicon dioxide layer, silicon nitride layer, metal layer.
3. The transient substrate assembly of claim 1, wherein the opening is located in at least one of:
a first opening in the support layer at the bottom of each of the receiving cavities;
and the second opening is positioned between the adjacent light emitting chips and corresponds to the supporting layer.
4. The transient substrate assembly of claim 3, wherein the support layer corresponding to the bottom of each of the receiving cavities has the first opening between two electrodes of the light emitting chip.
5. The transient substrate assembly of claim 1, wherein the light emitting chip has opposite top and bottom surfaces, the electrode of the light emitting chip is disposed on the bottom surface thereof, and the electrode is attached to the support layer.
6. The transient substrate assembly of claim 1, wherein the light emitting chip has a top surface and a bottom surface opposite to each other, the electrodes of the light emitting chip are disposed on the bottom surface, and the top surface of the light emitting chip is attached to the supporting layer, and the distribution of each of the accommodating cavities on the second substrate corresponds to the distribution of die bonding areas of each chip on the circuit board one by one.
7. The transient substrate assembly of claim 1, wherein a height of the receiving cavity is less than or equal to a height of the light emitting chip.
8. The method of preparing a transient substrate assembly of claim 1, comprising:
providing a second substrate;
fixing the second substrate and a supporting layer, wherein the supporting layer is provided with a plurality of mutually isolated accommodating cavities, the fixing surfaces of the supporting layer and the second substrate are far away from the cavity openings of the accommodating cavities, and the supporting layer is also provided with at least one opening penetrating through the top surface and the bottom surface of the supporting layer;
the light-emitting chip is placed in the accommodating cavity, the light-emitting chip is located at the bottom of the accommodating cavity and attached to the supporting layer, and a gap is reserved between the side face of the light-emitting chip and the inner side wall of the accommodating cavity.
9. The method of claim 8, wherein the securing the second substrate to the back surface of the support layer opposite the cavity opening of the receiving cavity further comprises:
and removing the sacrificial layer between the supporting layer and the light emitting chip and between the supporting layer and the first substrate, wherein the sacrificial layer completely isolates the supporting layer from the light emitting chip and the first substrate.
10. The method of fabricating a transient substrate assembly of claim 9, wherein prior to removing the sacrificial layer further comprises:
providing the first substrate;
disposing the light emitting chip on the first substrate;
forming the sacrificial layer on the first substrate on the same surface of the light emitting chip and the light emitting chip;
forming a support layer on the sacrificial layer;
the opening is formed on the support layer.
CN202111443480.5A 2021-11-30 2021-11-30 Transient substrate assembly and preparation method thereof Pending CN116207189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111443480.5A CN116207189A (en) 2021-11-30 2021-11-30 Transient substrate assembly and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111443480.5A CN116207189A (en) 2021-11-30 2021-11-30 Transient substrate assembly and preparation method thereof

Publications (1)

Publication Number Publication Date
CN116207189A true CN116207189A (en) 2023-06-02

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Family Applications (1)

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Country Status (1)

Country Link
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