CN116206935B - Calibration method, device and equipment of wafer measurement machine - Google Patents
Calibration method, device and equipment of wafer measurement machine Download PDFInfo
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Abstract
The present invention relates to the field of photolithography, and in particular, to a method, apparatus, device, and computer readable storage medium for calibrating a wafer measurement machine by obtaining a given pattern and a reliable value of a first critical dimension corresponding to the given pattern; measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; determining a key image peak through the gray level change curve; determining a target gray level in the key image peak according to the reliable value of the first key size; and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated. The invention realizes the high-speed measurement and higher measurement precision and accuracy of the machine to be calibrated by the gray level change curve obtained by the machine to be calibrated in the measurement process, delineating the approximate range of the graph and determining the gray level value read by the machine to be calibrated at the boundary of the given graph and the background.
Description
Technical Field
The present invention relates to the field of photolithography, and in particular, to a method, apparatus, device and computer readable storage medium for calibrating a wafer measurement machine.
Background
The critical dimension is an important engineering parameter for measuring whether the wafer meets the standard or not as an important attribute of the wafer, and in the current wafer detection, different detection modes have different advantages. For example, CD-SEM (critical dimension scanning electron microscope) is accurate, but the measurement speed is slow, only a limited pattern can be measured, on the other hand, other electron beam scanning methods have very high measurement efficiency, and a large number of critical dimensions of the pattern can be obtained in a limited time, but the measurement value usually has a large deviation from the actual situation.
Therefore, how to ensure a faster measurement speed and a higher measurement efficiency in the wafer inspection process, and also to consider the accuracy of critical dimension measurement is a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a calibration method, a device, equipment and a computer readable storage medium for a wafer measurement machine, which are used for solving the problem that the high-efficiency measurement of critical dimensions and higher measurement precision are not compatible in the prior art.
In order to solve the above technical problems, the present invention provides a calibration method of a wafer measurement machine, including:
acquiring a given graph and a reliable value of a first critical dimension corresponding to the given graph;
measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path;
determining a key image peak through the gray level change curve;
determining a target gray level in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value;
and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated.
Optionally, in the calibration method of the wafer measurement apparatus, the obtaining the given pattern and the reliable value of the first critical dimension corresponding to the given pattern includes:
acquiring a plurality of given graphs and reliable values of first critical dimensions corresponding to the given graphs;
correspondingly, the step of measuring the first critical dimension of the given pattern by using the to-be-calibrated machine to obtain the gray scale change curve in the measurement process comprises the following steps:
measuring first critical dimensions of a plurality of given patterns by using a machine to be calibrated to obtain gray level change curves respectively corresponding to the given patterns in the measuring process;
accordingly, the determining the key image peak through the gray level variation curve includes:
respectively determining corresponding key image peaks through a plurality of gray level change curves;
accordingly, the determining the target gray scale in the key image peak according to the reliable value of the first key size includes:
determining target gray scales corresponding to the gray scale change curves in the corresponding key image peaks according to the reliable values of the first key sizes;
correspondingly, the step of taking the target gray scale as the graphic-background demarcation value of the machine to be calibrated comprises the following steps:
determining a calibration gray according to a plurality of the target gray values;
and taking the calibration gray scale as a graph-background demarcation value of the machine to be calibrated.
Optionally, in the calibration method of the wafer measurement apparatus, the determining the calibration gray scale according to the plurality of target gray scale values includes:
and determining an average value of a plurality of target gray values as a calibration gray.
Optionally, in the calibration method of the wafer measurement machine, obtaining the given pattern and the reliable value of the first critical dimension corresponding to the given pattern includes:
receiving a given graphic;
measuring a first critical dimension of the given pattern along a measurement path by using a reliable machine to obtain a reliable value of the first critical dimension;
correspondingly, the step of measuring the first critical dimension of the given pattern by using the to-be-calibrated machine to obtain the gray scale change curve in the measurement process comprises the following steps:
and measuring the first critical dimension of the given pattern along the measuring path by using the machine to be calibrated to obtain a gray level change curve in the measuring process.
Optionally, in the calibration method of the wafer measurement apparatus, the measuring the first critical dimension of the given pattern with the apparatus to be calibrated, the obtaining the gray scale variation curve in the measurement process includes:
and measuring a first critical dimension of the given graph by using a machine to be calibrated, obtaining a gray level change curve in the measurement process, and normalizing the gray level value of the vertical axis of the gray level change curve.
A calibration apparatus for a wafer measurement tool, comprising:
the acquisition module is used for acquiring the given graph and the reliable value of the first critical dimension corresponding to the given graph;
the curve module is used for measuring the first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path;
the peak determining module is used for determining key image peaks through the gray level change curve;
the target gray scale module is used for determining target gray scale in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value;
and the calibration module is used for taking the target gray scale as a graph-background demarcation value of the machine to be calibrated and completing the calibration of the machine to be calibrated.
Optionally, in the calibration device of the wafer measurement machine, the acquiring module includes:
a plurality of acquisition units, which are used for acquiring a plurality of given graphs and reliable values of a plurality of first key sizes corresponding to the given graphs;
accordingly, the curve module comprises:
the complex curve unit is used for measuring first key sizes of a plurality of given patterns by using a machine to be calibrated to obtain gray level change curves respectively corresponding to the given patterns in the measuring process;
correspondingly, the peaking module comprises:
the complex peak determining unit is used for respectively determining corresponding key image peaks through a plurality of gray level change curves;
accordingly, the target gray scale module includes:
a plurality of target gray level units, which are used for determining target gray levels corresponding to a plurality of gray level change curves in the corresponding key image peaks according to the reliable values of a plurality of first key sizes;
accordingly, the calibration module comprises:
a calculation calibration unit for determining a calibration gray according to a plurality of the target gray values;
and the calibration execution unit is used for taking the calibration gray scale as the graph-background demarcation value of the machine to be calibrated.
Optionally, in the calibration device of the wafer measurement machine, the obtaining module includes:
a receiving unit configured to receive a given pattern;
the reliable machine unit is used for measuring the first critical dimension of the given graph along the measurement path by utilizing the reliable machine to obtain a reliable value of the first critical dimension;
accordingly, the curve module comprises:
and the machine to be calibrated unit is used for measuring the first critical dimension of the given graph along the measurement path by utilizing the machine to be calibrated to obtain a gray level change curve in the measurement process.
A calibration apparatus for a wafer measurement tool, comprising:
a memory for storing a computer program;
and the processor is used for realizing the steps of the calibration method of the wafer measuring machine when executing the computer program.
A computer readable storage medium having stored thereon a computer program which, when executed by a processor, performs the steps of a method of calibrating a wafer measurement tool as described in any of the above.
The calibration method of the wafer measurement machine provided by the invention comprises the steps of obtaining a given graph and a reliable value of a first critical dimension corresponding to the given graph; measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path; determining a key image peak through the gray level change curve; determining a target gray level in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value; and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated. The invention does not adopt the value of the first critical dimension obtained by the machine to be calibrated any more, but the approximate range of the graph is defined through the gray level change curve obtained by the machine to be calibrated in the measuring process, and then the gray level value read by the machine to be calibrated, namely the target gray level, can be determined at the boundary between the given graph and the background according to the reliable value of the first critical dimension, and then the measurement precision and the accuracy of the critical dimension can be greatly improved on the basis of maintaining the high-speed measurement of the machine to be calibrated by only setting the target gray level as the boundary value between the graph and the background of the image read by the machine to be calibrated. The invention also provides a calibration device, equipment and a computer readable storage medium of the wafer measuring machine with the beneficial effects.
Drawings
For a clearer description of embodiments of the invention or of the prior art, the drawings that are used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a calibration method of a wafer measurement tool according to an embodiment of the present invention;
fig. 2 and fig. 3 are process flow diagrams of an embodiment of a calibration method of a wafer measurement machine according to the present invention;
FIG. 4 is a flowchart illustrating another embodiment of a calibration method of a wafer measurement tool according to the present invention;
fig. 5 is a schematic structural diagram of an embodiment of a calibration apparatus for a wafer measurement apparatus according to the present invention.
The drawings include: 100. the device comprises an acquisition module, 200, a curve module, 300, a peak determining module, 400, a target gray scale module, 500 and a calibration module.
Detailed Description
In order to better understand the aspects of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The core of the present invention is to provide a calibration method of a wafer measurement machine, a flow chart of an embodiment of which is shown in fig. 1, which is called as an embodiment one, including:
s101: and obtaining the given graph and the reliable value of the first critical dimension corresponding to the given graph.
The reliable value corresponding to the first critical dimension refers to a value with precision and accuracy meeting requirements, which may be a standard component purchased from other sources and attached with critical dimension information, or may be measured in advance by a high-precision device to obtain the value of the first critical dimension of the given pattern (for example, the value of the first critical dimension of the given pattern is measured in advance by a critical dimension scanning electron microscope), which is not limited in this invention.
Of course, the number of the given patterns can be one or more, when only one given pattern is used, the calculation efficiency can be greatly improved, when a plurality of given patterns are selected, the accuracy and the precision of calibration can be further improved, and below each step, the specific implementation modes of each step are shown as A1 to A6 when a plurality of given patterns are used, the method comprises the following steps:
a1: and obtaining a plurality of given graphs and reliable values of a plurality of first critical dimensions corresponding to the given graphs.
In the preferred embodiment, a plurality of given patterns are obtained, and reliable values of the first critical dimension corresponding to each given pattern are obtained.
S102: measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to the gray level value, and the horizontal axis corresponds to the measurement path.
It should be noted that the first critical dimension in the present invention is only for illustrating that the critical dimension measured by the to-be-calibrated platen and the critical dimension obtained in step S101 are the same critical dimension, and is not limited to the type or kind of the first critical dimension.
Referring to fig. 2 and 3, fig. 2 is a gray scale diagram of a given pattern scanned by the to-be-calibrated machine, it is easy to see that the pattern itself has obvious gray scale difference from the background, and the working flow of the critical dimension measuring device needs to scan the given pattern along a preset measuring path, if the critical dimension to be measured in fig. 2 is the width of a straight line pattern, the straight line pattern (marked by a double-headed arrow line segment in fig. 2) needs to be scanned vertically to obtain the gray scale change on the path, the gray scale change curve in fig. 3 corresponds to the gray scale change curve, and the horizontal axis of the gray scale change curve corresponds to the measuring path, so that the unit is a length unit, the vertical axis corresponds to the gray scale value of each point on the measuring path, and the vertical axis of the gray scale change curve shown in fig. 3 is, and the gray scale becomes brighter with the increase of the value corresponding to the vertical axis; the darker the image, the smaller the corresponding vertical axis value, which is merely an example of the present embodiment, and in actual operation, the darker the image, the larger the vertical axis value, which is not limited herein.
In another aspect, the step comprises:
and measuring a first critical dimension of the given graph by using a machine to be calibrated, obtaining a gray level change curve in the measurement process, and normalizing the gray level value of the vertical axis of the gray level change curve.
In other words, the vertical axis of the gray level change curve in the preferred embodiment does not use the gray level parameters of 120, 850, etc., and only uses the numbers from 0 to 1 from pure black to pure white, so that the subsequent calculation pressure is greatly reduced, the calculation force is released, and the processing efficiency is improved.
For the specific implementation of the given graph with a plurality of given graphs, the steps are as follows:
a2: and measuring the first critical dimensions of the given patterns by using a machine to be calibrated to obtain gray level change curves respectively corresponding to the given patterns in the measuring process.
Each of the given images corresponds to one of the gray scale variation curves.
S103: and determining a key image peak through the gray level change curve.
As shown in fig. 3, fig. 3 corresponds to fig. 2, and in connection with the light-colored straight line pattern of fig. 2, there is a distinct peak pattern corresponding to fig. 3, and a small depression is provided at the top of the peak, which is just darker in the middle of the bright straight line pattern corresponding to fig. 2, and the peak is taken as the key image peak.
In addition, it has been described above that the larger the vertical axis of the gradation change curve is, the brighter the value is, and the larger the value is, the darker the value is, and thus the key image peak may be a "peak" in which the peak tip is directed in the opposite direction to the vertical axis.
For the specific implementation of the given graph with a plurality of given graphs, the steps are as follows:
a3: and respectively determining corresponding key image peaks through a plurality of gray level change curves.
S104: determining a target gray level in the key image peak according to the reliable value of the first key size; and the length of a line segment cut by the key image peak is equal to the reliable value, wherein the horizontal line corresponds to the target gray level in the gray level change curve.
Referring to fig. 3, it may be assumed that a straight line parallel to the horizontal axis gradually rises along the positive direction of the vertical axis, and as the line gradually approaches the top of the key image peak, the line segment of the straight line cut by the key image peak has a continuous gradual shortening process, and at a certain moment, the length of the line segment cut by the key image peak is equal to the reliable value (denoted by d in fig. 3), and the gray value (denoted by Ti in fig. 3) corresponding to the intersection point of the line segment and the gray change curve is the boundary point between the given graph and the background in the scanned image of the machine to be calibrated.
For the specific implementation of the given graph with a plurality of given graphs, the steps are as follows:
a4: and determining target gray scales corresponding to the gray scale change curves in the corresponding key image peaks according to the reliable values of the first key sizes.
S105: and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated.
Since the gray value is perceived by the boundary point between the pattern and the background under the scanning of the machine to be calibrated, in this step, the gray value in the image scanned by the machine to be calibrated is defined as the boundary value between the pattern and the background in the image, so that the shape outline of the pattern can be better obtained by the machine to be calibrated, and the critical dimension data of the pattern can be measured more accurately.
For the specific implementation of the given graph with a plurality of given graphs, the steps are as follows:
a5: and determining a calibration gray according to a plurality of target gray values.
A6: and taking the calibration gray scale as a graph-background demarcation value of the machine to be calibrated.
The target gray values obtained by a plurality of different given patterns are integrated to obtain the calibration gray value as the pattern-background demarcation value of the machine to be calibrated, so that the measurement conditions of various patterns can be integrated, the obtained calibration gray value is more representative, and the method is more applicable to various conditions.
Still further, the method for determining calibration gray scale includes:
and determining an average value of a plurality of target gray values as a calibration gray.
And the average of the target gray values is carried out, so that the representative of the calibration gray is improved, the operation efficiency is greatly improved, and the time and the calculation force are saved.
The calibration method of the wafer measurement machine provided by the invention comprises the steps of obtaining a given graph and a reliable value of a first critical dimension corresponding to the given graph; measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path; determining a key image peak through the gray level change curve; determining a target gray level in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value; and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated. The invention does not adopt the value of the first critical dimension obtained by the machine to be calibrated any more, but the approximate range of the graph is defined through the gray level change curve obtained by the machine to be calibrated in the measuring process, and then the gray level value read by the machine to be calibrated, namely the target gray level, can be determined at the boundary between the given graph and the background according to the reliable value of the first critical dimension, and then the measurement precision and the accuracy of the critical dimension can be greatly improved on the basis of maintaining the high-speed measurement of the machine to be calibrated by only setting the target gray level as the boundary value between the graph and the background of the image read by the machine to be calibrated.
Based on the first embodiment, the method for obtaining the reliable value is further improved to obtain a second embodiment, and a flow chart of the second embodiment is shown in fig. 4, and the method comprises the following steps:
s201: a given graphic is received.
S202: and measuring the first critical dimension of the given graph along a measurement path by using a reliable machine to obtain a reliable value of the first critical dimension.
Please refer to the foregoing description in conjunction with fig. 2, and the description thereof will not be repeated here.
S203: measuring a first critical dimension of the given pattern along the measuring path by using the machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to the gray level value, and the horizontal axis corresponds to the measurement path.
S204: and determining a key image peak through the gray level change curve.
S205: determining a target gray level in the key image peak according to the reliable value of the first key size; and the length of a line segment cut by the key image peak is equal to the reliable value, wherein the horizontal line corresponds to the target gray level in the gray level change curve.
S206: and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated.
The difference between the present embodiment and the foregoing embodiment is that in this embodiment, the method for obtaining the reliable value of the first critical dimension is further provided, and the other steps are the same as those of the foregoing embodiment, and are not repeated herein.
In this embodiment, the reliable value of the first critical dimension is measured by using the reliable machine (which may be a critical dimension scanning electron microscope or other precise critical dimension scanning device) along a given measurement path, and in the subsequent measurement of the machine to be calibrated, the measurement is performed along the same measurement path on the same given graph, so that the inconsistency of the two measurements of the first critical dimension is avoided to the greatest extent, and the obtained target gray scale is closer to the real graph-background boundary value for the machine to be calibrated, thereby further improving the reliability of the calibration of the machine to be calibrated.
The calibration device of the wafer measurement machine provided by the embodiment of the invention is introduced below, and the calibration device of the wafer measurement machine and the calibration method of the wafer measurement machine described below can be correspondingly referred to each other.
Fig. 5 is a block diagram of a calibration apparatus for a wafer measurement apparatus according to an embodiment of the present invention, and referring to fig. 5, the calibration apparatus for a wafer measurement apparatus may include:
an obtaining module 100, configured to obtain a given graph and a reliable value of a first critical dimension corresponding to the given graph;
the curve module 200 is configured to measure a first critical dimension of the given pattern by using a to-be-calibrated machine, so as to obtain a gray level change curve in the measurement process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path;
the peak determining module 300 is configured to determine a key image peak according to the gray level change curve;
a target gray scale module 400, configured to determine a target gray scale in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value;
and the calibration module 500 is used for taking the target gray scale as a graph-background demarcation value of the to-be-calibrated machine to finish the calibration of the to-be-calibrated machine.
As a preferred embodiment, the acquisition module 100 includes:
a plurality of acquisition units, which are used for acquiring a plurality of given graphs and reliable values of a plurality of first key sizes corresponding to the given graphs;
accordingly, the curve module 200 includes:
the complex curve unit is used for measuring first key sizes of a plurality of given patterns by using a machine to be calibrated to obtain gray level change curves respectively corresponding to the given patterns in the measuring process;
accordingly, the peaking module 300 includes:
the complex peak determining unit is used for respectively determining corresponding key image peaks through a plurality of gray level change curves;
accordingly, the target gray scale module 400 includes:
a plurality of target gray level units, which are used for determining target gray levels corresponding to a plurality of gray level change curves in the corresponding key image peaks according to the reliable values of a plurality of first key sizes;
accordingly, the calibration module 500 includes:
a calculation calibration unit for determining a calibration gray according to a plurality of the target gray values;
and the calibration execution unit is used for taking the calibration gray scale as the graph-background demarcation value of the machine to be calibrated.
As a preferred embodiment, the calibration module 500 includes:
and the average calibration unit is used for determining the average value of the target gray values as the calibration gray.
As a preferred embodiment, the acquisition module 100 includes:
a receiving unit configured to receive a given pattern;
the reliable machine unit is used for measuring the first critical dimension of the given graph along the measurement path by utilizing the reliable machine to obtain a reliable value of the first critical dimension;
accordingly, the curve module 200 includes:
and the machine to be calibrated unit is used for measuring the first critical dimension of the given graph along the measurement path by utilizing the machine to be calibrated to obtain a gray level change curve in the measurement process.
As a preferred embodiment, the curve module 200 includes:
and the normalization curve unit is used for measuring the first critical dimension of the given graph by using a machine to be calibrated, obtaining a gray level change curve in the measurement process, and normalizing the gray level value of the vertical axis of the gray level change curve.
The calibration device of the wafer measurement machine provided by the invention comprises an acquisition module 100, a calibration module and a calibration module, wherein the acquisition module is used for acquiring a given graph and a reliable value of a first critical dimension corresponding to the given graph; the curve module 200 is configured to measure a first critical dimension of the given pattern by using a to-be-calibrated machine, so as to obtain a gray level change curve in the measurement process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path; the peak determining module 300 is configured to determine a key image peak according to the gray level change curve; a target gray scale module 400, configured to determine a target gray scale in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value; and the calibration module 500 is used for taking the target gray scale as a graph-background demarcation value of the to-be-calibrated machine to finish the calibration of the to-be-calibrated machine. The invention does not adopt the value of the first critical dimension obtained by the machine to be calibrated any more, but the approximate range of the graph is defined through the gray level change curve obtained by the machine to be calibrated in the measuring process, and then the gray level value read by the machine to be calibrated, namely the target gray level, can be determined at the boundary between the given graph and the background according to the reliable value of the first critical dimension, and then the measurement precision and the accuracy of the critical dimension can be greatly improved on the basis of maintaining the high-speed measurement of the machine to be calibrated by only setting the target gray level as the boundary value between the graph and the background of the image read by the machine to be calibrated.
The calibration device of the wafer measurement machine in this embodiment is used to implement the foregoing calibration method of the wafer measurement machine, so that the detailed description of the calibration device of the wafer measurement machine can be found in the foregoing example portions of the calibration method of the wafer measurement machine, for example, the acquisition module 100, the curve module 200, the peak determining module 300, the target gray scale module 400, and the calibration module 500 are respectively used to implement steps S101, S102, S103, S104, and S105 in the calibration method of the wafer measurement machine, so that the detailed description of the embodiments of the corresponding portions will not be repeated herein.
The invention also provides a calibration device of the wafer measurement machine, which comprises:
a memory for storing a computer program;
and the processor is used for realizing the steps of the calibration method of the wafer measuring machine when executing the computer program. The calibration method of the wafer measurement machine provided by the invention comprises the steps of obtaining a given graph and a reliable value of a first critical dimension corresponding to the given graph; measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path; determining a key image peak through the gray level change curve; determining a target gray level in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value; and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated. The invention does not adopt the value of the first critical dimension obtained by the machine to be calibrated any more, but the approximate range of the graph is defined through the gray level change curve obtained by the machine to be calibrated in the measuring process, and then the gray level value read by the machine to be calibrated, namely the target gray level, can be determined at the boundary between the given graph and the background according to the reliable value of the first critical dimension, and then the measurement precision and the accuracy of the critical dimension can be greatly improved on the basis of maintaining the high-speed measurement of the machine to be calibrated by only setting the target gray level as the boundary value between the graph and the background of the image read by the machine to be calibrated.
The invention also provides a computer readable storage medium, on which a computer program is stored, which when being executed by a processor, implements the steps of the method for calibrating a wafer measurement machine as described in any of the above. The calibration method of the wafer measurement machine provided by the invention comprises the steps of obtaining a given graph and a reliable value of a first critical dimension corresponding to the given graph; measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path; determining a key image peak through the gray level change curve; determining a target gray level in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value; and taking the target gray scale as a graph-background boundary value of the machine to be calibrated, and completing calibration of the machine to be calibrated. The invention does not adopt the value of the first critical dimension obtained by the machine to be calibrated any more, but the approximate range of the graph is defined through the gray level change curve obtained by the machine to be calibrated in the measuring process, and then the gray level value read by the machine to be calibrated, namely the target gray level, can be determined at the boundary between the given graph and the background according to the reliable value of the first critical dimension, and then the measurement precision and the accuracy of the critical dimension can be greatly improved on the basis of maintaining the high-speed measurement of the machine to be calibrated by only setting the target gray level as the boundary value between the graph and the background of the image read by the machine to be calibrated.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, so that the same or similar parts between the embodiments are referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It should be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative elements and steps are described above generally in terms of functionality in order to clearly illustrate the interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software modules may be disposed in Random Access Memory (RAM), memory, read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
The calibration method, device, equipment and computer readable storage medium of the wafer measurement machine provided by the invention are described in detail above. The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the invention can be made without departing from the principles of the invention and these modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
Claims (10)
1. The calibration method of the wafer measuring machine is characterized by comprising the following steps:
acquiring a given graph and a reliable value of a first critical dimension corresponding to the given graph;
measuring a first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path;
determining a key image peak through the gray level change curve;
determining a target gray level in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value;
and taking the target gray scale as a boundary value between the graph and the background of the machine to be calibrated, and completing the calibration of the machine to be calibrated.
2. The method of claim 1, wherein obtaining the given pattern and the reliable value of the first critical dimension corresponding to the given pattern comprises:
acquiring a plurality of given graphs and reliable values of first critical dimensions corresponding to the given graphs;
correspondingly, the step of measuring the first critical dimension of the given pattern by using the to-be-calibrated machine to obtain the gray scale change curve in the measurement process comprises the following steps:
measuring first critical dimensions of a plurality of given patterns by using a machine to be calibrated to obtain gray level change curves respectively corresponding to the given patterns in the measuring process;
accordingly, the determining the key image peak through the gray level variation curve includes:
respectively determining corresponding key image peaks through a plurality of gray level change curves;
accordingly, the determining the target gray scale in the key image peak according to the reliable value of the first key size includes:
determining target gray scales corresponding to the gray scale change curves in the corresponding key image peaks according to the reliable values of the first key sizes;
correspondingly, the step of taking the target gray scale as the boundary value between the graph and the background of the machine to be calibrated comprises the following steps:
determining a calibration gray according to a plurality of target gray;
and taking the calibration gray scale as a boundary value between the graph and the background of the machine to be calibrated.
3. The method of calibrating a wafer measurement tool according to claim 2, wherein determining the calibration gray scale according to the plurality of target gray scales comprises:
and determining the average value of a plurality of target grayscales as a calibration gray scale.
4. The method of calibrating a wafer measurement tool according to claim 1, wherein obtaining a given pattern and a reliable value of a first critical dimension corresponding to the given pattern comprises:
receiving a given graphic;
measuring a first critical dimension of the given pattern along a measurement path by using a reliable machine to obtain a reliable value of the first critical dimension;
correspondingly, the step of measuring the first critical dimension of the given pattern by using the to-be-calibrated machine to obtain the gray scale change curve in the measurement process comprises the following steps:
and measuring the first critical dimension of the given pattern along the measuring path by using the machine to be calibrated to obtain a gray level change curve in the measuring process.
5. The method of calibrating a wafer measurement tool according to claim 1, wherein measuring the first critical dimension of the given pattern using the tool to be calibrated to obtain a gray scale variation curve during the measurement process comprises:
and measuring a first critical dimension of the given graph by using a machine to be calibrated, obtaining a gray level change curve in the measurement process, and normalizing the gray level value of the vertical axis of the gray level change curve.
6. A calibration apparatus for a wafer measurement tool, comprising:
the acquisition module is used for acquiring the given graph and the reliable value of the first critical dimension corresponding to the given graph;
the curve module is used for measuring the first critical dimension of the given graph by using a machine to be calibrated to obtain a gray level change curve in the measuring process; wherein, the vertical axis of the gray level change curve corresponds to a gray level value, and the horizontal axis corresponds to a measurement path;
the peak determining module is used for determining key image peaks through the gray level change curve;
the target gray scale module is used for determining target gray scale in the key image peak according to the reliable value of the first key size; the length of a line segment cut by the key image peak of a horizontal line corresponding to the target gray level in the gray level change curve is equal to the reliable value;
and the calibration module is used for taking the target gray scale as a boundary value between the graph and the background of the to-be-calibrated machine and completing the calibration of the to-be-calibrated machine.
7. The apparatus according to claim 6, wherein the obtaining module comprises:
a plurality of acquisition units, which are used for acquiring a plurality of given graphs and reliable values of a plurality of first key sizes corresponding to the given graphs;
accordingly, the curve module comprises:
the complex curve unit is used for measuring first key sizes of a plurality of given patterns by using a machine to be calibrated to obtain gray level change curves respectively corresponding to the given patterns in the measuring process;
correspondingly, the peaking module comprises:
the complex peak determining unit is used for respectively determining corresponding key image peaks through a plurality of gray level change curves;
accordingly, the target gray scale module includes:
a plurality of target gray level units, which are used for determining target gray levels corresponding to a plurality of gray level change curves in the corresponding key image peaks according to the reliable values of a plurality of first key sizes;
accordingly, the calibration module comprises:
a calculation calibration unit for determining a calibration gray according to a plurality of the target gray;
and the calibration execution unit is used for taking the calibration gray scale as a boundary value between the graph and the background of the machine to be calibrated.
8. The apparatus according to claim 6, wherein the obtaining module comprises:
a receiving unit configured to receive a given pattern;
the reliable machine unit is used for measuring the first critical dimension of the given graph along the measurement path by utilizing the reliable machine to obtain a reliable value of the first critical dimension;
accordingly, the curve module comprises:
and the machine to be calibrated unit is used for measuring the first critical dimension of the given graph along the measurement path by utilizing the machine to be calibrated to obtain a gray level change curve in the measurement process.
9. A calibration apparatus for a wafer measurement tool, comprising:
a memory for storing a computer program;
a processor for implementing the steps of the method for calibrating a wafer measurement machine according to any of claims 1 to 5 when executing the computer program.
10. A computer-readable storage medium, on which a computer program is stored, which computer program, when being executed by a processor, carries out the steps of the method for calibrating a wafer measurement machine according to any of claims 1 to 5.
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