CN116197096A - Silicon nitride heating film and preparation method thereof - Google Patents
Silicon nitride heating film and preparation method thereof Download PDFInfo
- Publication number
- CN116197096A CN116197096A CN202211636755.1A CN202211636755A CN116197096A CN 116197096 A CN116197096 A CN 116197096A CN 202211636755 A CN202211636755 A CN 202211636755A CN 116197096 A CN116197096 A CN 116197096A
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- heating film
- spraying
- source
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 91
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 81
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000005507 spraying Methods 0.000 claims abstract description 75
- 239000007788 liquid Substances 0.000 claims abstract description 30
- 229910052788 barium Inorganic materials 0.000 claims abstract description 24
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052738 indium Inorganic materials 0.000 claims abstract description 24
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002904 solvent Substances 0.000 claims abstract description 13
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical group Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 20
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical group [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 10
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 claims description 9
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005485 electric heating Methods 0.000 description 7
- 238000003756 stirring Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0433—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a reactive gas
- B05D3/0453—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of heating films, and provides a preparation method of a silicon nitride heating film. The invention prepares the spraying liquid by taking a tin source, an indium source, a barium source and a solvent as raw materials, and barium and indium are taken as doping elements, thereby being beneficial to reducing the resistivity of the heating film; then spraying a spraying liquid on the silicon nitride substrate, wherein the thickness of the heating film can be well controlled by adopting a spraying coating mode, so that the resistivity of the heating film is controlled, and the silicon nitride substrate is favorable for obtaining the silicon nitride heating film with good high temperature resistance, so that the service life of the heating film is prolonged; finally, roasting to form doped barium and indium on the surface of the silicon nitride substrateTin oxide heat generating film of (a). The results of the examples show that the silicon nitride heating film prepared by the preparation method provided by the invention has the resistivity of 1.13 multiplied by 10 ‑4 Omega cm, working temperature of 580 deg.C, thermal conductivity of 82W/m.k.
Description
Technical Field
The invention relates to the technical field of heating films, in particular to a silicon nitride heating film and a preparation method thereof.
Background
The electric heating film is an electric heating element with great development prospect, and the application of the foreign electric heating film is quite wide in the late 80 s. The electric heating film heating belongs to a resistance heating mode and is the same as a resistance wire. However, the electrothermal film is very thin, the thickness is only 0.01-1 mm, the material is mostly composed of high-valence oxide, and the electrothermal film has the following obvious advantages when being used as a heating element of an electric heater such as a fan heater: because the surface heating element is adopted, a metal radiator is not required to be installed; the temperature is not high during operation, open fire is avoided, safety and reliability are realized, and oxidization is avoided.
However, quartz tubes are mostly adopted as the matrix of heating films in the current heating market, but quartz glass tubes have low strength, bending strength of only 80MPa, low thermal conductivity of less than 2W/m.k, and high power consumption of heating elements when used as the matrix of heating elements, resulting in shortened service life of the heating elements, which greatly limits the development of high-power heating products. In addition, the existing electric heating film technology also commonly has the problems of low thermal stability, high resistivity and the like, and restricts the popularization and promotion of the electric heating film technology. Therefore, there is a need for an electric heating film that has good high temperature resistance, long service life and low resistivity.
Disclosure of Invention
The invention aims to provide a silicon nitride heating film and a preparation method thereof.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a silicon nitride heating film, which comprises the following steps:
(1) Mixing a tin source, an indium source, a barium source and a solvent to obtain a spraying liquid;
(2) Spraying the spraying liquid obtained in the step (1) on a silicon nitride substrate to obtain a silicon nitride heating film precursor;
(3) And (3) roasting the silicon nitride heating film precursor obtained in the step (2) to obtain the silicon nitride heating film.
Preferably, the tin source in the step (1) is tin tetrachloride; the indium source is indium trichloride; the barium source is barium oxide.
Preferably, the solvent in the step (1) is absolute ethanol.
Preferably, in the step (1), the mass ratio of the tin source, the indium source and the barium source is (50-80): (3-6): (0.05-0.2).
Preferably, the process parameters of spraying in the step (2) are as follows: the spraying distance is 30-50 cm, the spraying time is 10-30 min, the spraying speed is 2-4 cm/s, and the flow rate of the spraying liquid is 1.2-1.4 mL/s.
Preferably, the roasting temperature in the step (3) is 500-650 ℃, and the roasting time is 50-80 min.
Preferably, the roasting temperature in the step (3) is 560-620 ℃ and the roasting time is 55-65 min.
Preferably, the roasting atmosphere in the step (3) is oxygen.
The invention also provides the silicon nitride heating film prepared by the preparation method of the technical scheme, and the silicon nitride heating film comprises a silicon nitride substrate and a heating film.
Preferably, the thickness of the heating film is 800-1200 nm.
The invention provides a preparation method of a silicon nitride heating film, which comprises the following steps: (1) Mixing a tin source, an indium source, a barium source and a solvent to obtain a spraying liquid; (2) Spraying the spraying liquid obtained in the step (1) on a silicon nitride substrate to obtain a silicon nitride heating film precursor; (3) And (3) roasting the silicon nitride heating film precursor obtained in the step (2) to obtain the silicon nitride heating film. The invention prepares the spraying liquid by taking a tin source, an indium source, a barium source and a solvent as raw materials, and barium and indium are taken as doping elements, thereby being beneficial to reducing the resistivity of the heating film; then spraying a spraying liquid on the silicon nitride substrate, wherein the thickness of the heating film can be well controlled by adopting a spraying coating mode, so that the resistivity of the heating film is controlled, and the silicon nitride substrate is favorable for obtaining the silicon nitride heating film with good high temperature resistance, so that the service life of the heating film is prolonged; finally, roasting to form a tin oxide heating film doped with barium and indium on the surface of the silicon nitride substrate. The results of the examples show that the silicon nitride heating film prepared by the preparation method provided by the invention has the resistanceThe rate is 1.13×10 -4 Omega cm, working temperature of 580 deg.C, thermal conductivity of 82W/m.k.
Detailed Description
The invention provides a preparation method of a silicon nitride heating film, which comprises the following steps:
(1) Mixing a tin source, an indium source, a barium source and a solvent to obtain a spraying liquid;
(2) Spraying the spraying liquid obtained in the step (1) on a silicon nitride substrate to obtain a silicon nitride heating film precursor;
(3) And (3) roasting the silicon nitride heating film precursor obtained in the step (2) to obtain the silicon nitride heating film.
The invention mixes tin source, indium source, barium source and solvent to obtain spraying liquid.
The operation of mixing the tin source, the indium source, the barium source and the solvent is not particularly limited, and a mixing mode well known to those skilled in the art may be adopted. In the present invention, the mixing is preferably performed under stirring; the stirring speed is preferably 300-500 r/min; the stirring time is preferably 20 to 30 minutes.
In the present invention, the tin source is preferably tin tetrachloride. The tin source is used for preparing the tin oxide film and is used as a main body of the heating film, so that the heat insulation performance of the silicon nitride heating film is improved, the high temperature resistance of the silicon nitride heating film is ensured, and meanwhile, the silicon nitride heating film with low resistivity is obtained.
In the present invention, the indium source is preferably indium trichloride. The indium source is used as a doping element, so that the resistivity of the heating film is reduced.
In the present invention, the barium source is preferably barium oxide. The barium source is used as a doping element, so that the resistivity of the heating film is reduced. The source of the tin source, the indium source and the barium source is not particularly limited, and commercially available products known to those skilled in the art may be used.
In the present invention, the solvent is preferably absolute ethanol.
In the invention, the mass ratio of the tin source, the indium source and the barium source is preferably (50-80): (3-6): (0.05 to 0.2), more preferably (55 to 75): (3-5): (0.05-0.1). In the invention, the mass ratio of the tin source, the indium source and the barium source is preferably controlled within the above range, which is favorable for obtaining the silicon nitride heating film with low resistivity.
In the present invention, the solvent is preferably used in an amount of 100 to 150mL, based on 50 to 80g of the tin source.
After the spraying liquid is obtained, the spraying liquid is sprayed on the silicon nitride substrate to obtain the silicon nitride heating film precursor. The thickness of the heating film can be well controlled by adopting a spraying coating mode, so that the resistivity of the heating film is controlled, and the silicon nitride substrate is beneficial to obtaining the silicon nitride heating film with good high temperature resistance, so that the service life of the heating film is prolonged.
The spraying operation is not particularly limited, and the spraying technical scheme well known to those skilled in the art can be adopted.
In the invention, the technological parameters of the spraying are preferably as follows: the spraying distance is 30-50 cm, the spraying time is 10-30 min, the spraying speed is 2-4 cm/s, and the flow rate of the spraying liquid is 1.2-1.4 mL/s; more preferably: the spraying distance is 35-45 cm, the spraying time is 20-30 min, the spraying speed is 2-3 cm/s, and the flow rate of the spraying liquid is 1.2-1.3 mL/s. The invention controls the technological parameters of spraying in the above range, which is beneficial to obtaining the silicon nitride heating film with smooth and flat surface and low resistivity.
The source of the silicon nitride substrate is not particularly limited, and commercially available products known to those skilled in the art may be used.
After the silicon nitride heating film precursor is obtained, the silicon nitride heating film precursor is roasted to obtain the silicon nitride heating film.
In the present invention, the temperature of the calcination is preferably 500 to 650 ℃, more preferably 560 to 620 ℃; the calcination time is preferably 50 to 80 minutes, more preferably 55 to 65 minutes. In the present invention, the temperature and time of the firing are preferably controlled within the above ranges, which is advantageous in obtaining a silicon nitride heat generating film having a low resistivity.
In the present invention, the atmosphere for the calcination is preferably oxygen. The present invention preferably performs firing in an oxygen atmosphere, which is advantageous for obtaining a tin oxide film.
The invention prepares the spraying liquid by taking a tin source, an indium source, a barium source and a solvent as raw materials, and barium and indium are taken as doping elements, thereby being beneficial to reducing the resistivity of the heating film; then spraying a spraying liquid on the silicon nitride substrate, wherein the thickness of the heating film can be well controlled by adopting a spraying coating mode, so that the resistivity of the heating film is controlled, and the silicon nitride substrate is favorable for obtaining the silicon nitride heating film with good high temperature resistance, so that the service life of the heating film is prolonged; finally, roasting to form a tin oxide heating film doped with barium and indium on the surface of the silicon nitride substrate.
The invention also provides the silicon nitride heating film prepared by the preparation method of the technical scheme, and the silicon nitride heating film comprises a silicon nitride substrate and a heating film. The silicon nitride heating film provided by the invention has the advantages of good high temperature resistance, long service life and low resistivity.
In the present invention, the thickness of the heat generating film is preferably 800 to 1200nm, more preferably 850 to 1100nm.
The technical solutions of the present invention will be clearly and completely described in the following in connection with the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
(1) Mixing 80g of tin tetrachloride, 5g of indium trichloride, 0.1g of barium oxide and 150mL of absolute ethyl alcohol at a speed of 350r/min for 20min under stirring to obtain a spraying liquid; wherein, the mass ratio of tin tetrachloride, indium trichloride and barium oxide is 80:5:0.1;
(2) Spraying the spraying liquid obtained in the step (1) on a silicon nitride substrate to obtain a silicon nitride heating film precursor; wherein, the technological parameters of spraying are as follows: the spraying distance is 35cm, the spraying time is 20min, the spraying speed is 2cm/s, and the flow rate of the spraying liquid is 1.2mL/s;
(3) And (3) roasting the silicon nitride heating film precursor obtained in the step (2) for 55min at 620 ℃ in an oxygen atmosphere to obtain the silicon nitride heating film with the thickness of 850 nm.
Example 2
(1) 75g of tin tetrachloride, 4g of indium trichloride, 0.05g of barium oxide and 140mL of absolute ethyl alcohol are stirred and mixed for 20min at the speed of 350r/min to obtain a spraying liquid; wherein, the mass ratio of the stannic chloride, the indium trichloride and the barium oxide is 75:4:0.05;
(2) Spraying the spraying liquid obtained in the step (1) on a silicon nitride substrate to obtain a silicon nitride heating film precursor; wherein, the technological parameters of spraying are as follows: the spraying distance is 35cm, the spraying time is 30min, the spraying speed is 2cm/s, and the flow rate of the spraying liquid is 1.2mL/s;
(3) And (3) roasting the silicon nitride heating film precursor obtained in the step (2) for 55min at 620 ℃ in an oxygen atmosphere to obtain the silicon nitride heating film with the thickness of 900 nm.
Example 3
(1) 68g of stannic chloride, 3g of indium trichloride, 0.15g of barium oxide and 130mL of absolute ethyl alcohol are stirred and mixed for 20min at the speed of 350r/min to obtain a spraying liquid; wherein, the mass ratio of the stannic chloride, the indium trichloride and the barium oxide is 68:3:0.15;
(2) Spraying the spraying liquid obtained in the step (1) on a silicon nitride substrate to obtain a silicon nitride heating film precursor; wherein, the technological parameters of spraying are as follows: the spraying distance is 40cm, the spraying time is 25min, the spraying speed is 2cm/s, and the flow rate of the spraying liquid is 1.2mL/s;
(3) And (3) roasting the silicon nitride heating film precursor obtained in the step (2) at 580 ℃ for 65min in an oxygen atmosphere to obtain the silicon nitride heating film with the thickness of 880 nm.
Comparative example 1
The difference from example 1 is that indium trichloride was omitted in step (1), and the rest was the same as example 1.
Comparative example 2
The difference from example 1 is that the spraying time in step (2) is 10min, and the rest steps are the same as in example 1.
Comparative example 3
The difference from example 1 is that in step (3), the firing was conducted at 450℃for 55 minutes, and the remaining steps were the same as those in example 1.
The silicon nitride heat generating films prepared in examples 1 to 3 and comparative examples 1 to 3 were tested for resistivity by a four-probe method; the thermal conductivities of the silicon nitride heating films prepared in examples 1 to 3 and comparative examples 1 to 3 were tested according to the GB/T22588-2008 flash method for measuring thermal diffusivity or thermal conductivity; the positive and negative electrodes were connected to 220V voltage and energized for 30 seconds, and the surface temperatures of the silicon nitride heating films prepared in examples 1 to 3 and comparative examples 1 to 3 were measured using an infrared temperature tester, i.e., working temperatures, and the measurement results are shown in table 1.
Table 1 properties of the silicon nitride heat generating films prepared in examples 1 to 3 and comparative examples 1 to 3
| Resistivity (Ω cm) | Surface temperature (. Degree. C.) | Thermal conductivity (W/m.k) | |
| Example 1 | 1.13×10 -4 | 580 | 82 |
| Example 2 | 1.27×10 -4 | 576 | 79 |
| Example 3 | 1.31×10 -4 | 579 | 76 |
| Comparative example 1 | 5.18×10 -4 | 567 | 59 |
| Comparative example 2 | 4.23×10 -4 | 573 | 65 |
| Comparative example 3 | 4.55×10 -4 | 575 | 61 |
As can be seen from the above examples, the silicon nitride heating film prepared by the preparation method provided by the invention has good high temperature resistance, long service life and low resistivity, and the resistivity is 1.13×10 -4 Omega cm, working temperature of 580 deg.C, thermal conductivity of 82W/m.k.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A preparation method of a silicon nitride heating film comprises the following steps:
(1) Mixing a tin source, an indium source, a barium source and a solvent to obtain a spraying liquid;
(2) Spraying the spraying liquid obtained in the step (1) on a silicon nitride substrate to obtain a silicon nitride heating film precursor;
(3) And (3) roasting the silicon nitride heating film precursor obtained in the step (2) to obtain the silicon nitride heating film.
2. The method according to claim 1, wherein the tin source in the step (1) is tin tetrachloride; the indium source is indium trichloride; the barium source is barium oxide.
3. The method according to claim 1, wherein the solvent in the step (1) is absolute ethanol.
4. The preparation method according to claim 1 or 2, wherein the mass ratio of the tin source, the indium source and the barium source in the step (1) is (50-80): (3-6): (0.05-0.2).
5. The method according to claim 1, wherein the process parameters of the spraying in the step (2) are: the spraying distance is 30-50 cm, the spraying time is 10-30 min, the spraying speed is 2-4 cm/s, and the flow rate of the spraying liquid is 1.2-1.4 mL/s.
6. The method according to claim 1, wherein the baking temperature in the step (3) is 500 to 650 ℃ and the baking time is 50 to 80min.
7. The method according to claim 6, wherein the baking temperature in the step (3) is 560 to 620 ℃ and the baking time is 55 to 65 minutes.
8. The method according to claim 1 or 6, wherein the atmosphere for calcination in the step (3) is oxygen.
9. The silicon nitride heating film prepared by the preparation method according to any one of claims 1 to 8, wherein the silicon nitride heating film comprises a silicon nitride substrate and a heating film.
10. The silicon nitride heat generating film according to claim 9, wherein the thickness of the heat generating film is 800 to 1200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211636755.1A CN116197096A (en) | 2022-12-16 | 2022-12-16 | Silicon nitride heating film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211636755.1A CN116197096A (en) | 2022-12-16 | 2022-12-16 | Silicon nitride heating film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116197096A true CN116197096A (en) | 2023-06-02 |
Family
ID=86513767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211636755.1A Pending CN116197096A (en) | 2022-12-16 | 2022-12-16 | Silicon nitride heating film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116197096A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1280960A (en) * | 2000-07-15 | 2001-01-24 | 昆明理工大学 | Process for preparing sol-gel of indium tin oxide film |
| JP2001058851A (en) * | 1998-10-30 | 2001-03-06 | Nippon Sheet Glass Co Ltd | Glass plate with electroconductive film and glass article using the same |
| CN101894601A (en) * | 2010-06-10 | 2010-11-24 | 泰阳电子(东莞)有限公司 | Transparent conductive film and preparation method thereof |
| CN102480809A (en) * | 2010-11-30 | 2012-05-30 | 深圳腾航科技有限公司 | High performance metal oxide doped transparent electric heating film technology and preparation process thereof |
| CN109957789A (en) * | 2019-04-12 | 2019-07-02 | 盐城工学院 | A kind of high IR emissivity double-layer electric heating film and preparation method thereof |
| CN111727179A (en) * | 2018-02-19 | 2020-09-29 | 住友化学株式会社 | Tin oxide sintered compact and method for producing same |
| CN112851334A (en) * | 2021-02-04 | 2021-05-28 | 宁波云川环保科技有限公司 | Heating body based on silicon nitride and preparation process thereof |
-
2022
- 2022-12-16 CN CN202211636755.1A patent/CN116197096A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001058851A (en) * | 1998-10-30 | 2001-03-06 | Nippon Sheet Glass Co Ltd | Glass plate with electroconductive film and glass article using the same |
| CN1280960A (en) * | 2000-07-15 | 2001-01-24 | 昆明理工大学 | Process for preparing sol-gel of indium tin oxide film |
| CN101894601A (en) * | 2010-06-10 | 2010-11-24 | 泰阳电子(东莞)有限公司 | Transparent conductive film and preparation method thereof |
| CN102480809A (en) * | 2010-11-30 | 2012-05-30 | 深圳腾航科技有限公司 | High performance metal oxide doped transparent electric heating film technology and preparation process thereof |
| CN111727179A (en) * | 2018-02-19 | 2020-09-29 | 住友化学株式会社 | Tin oxide sintered compact and method for producing same |
| CN109957789A (en) * | 2019-04-12 | 2019-07-02 | 盐城工学院 | A kind of high IR emissivity double-layer electric heating film and preparation method thereof |
| CN112851334A (en) * | 2021-02-04 | 2021-05-28 | 宁波云川环保科技有限公司 | Heating body based on silicon nitride and preparation process thereof |
Non-Patent Citations (2)
| Title |
|---|
| 杨景发等: "板式电热膜加热元件的制备及应用", 《红外技术》, vol. 33, no. 11, pages 678 - 681 * |
| 甄聪棉等: "真空蒸发镀膜", 《物理实验》, no. 5, pages 31 - 35 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8742303B2 (en) | Heating apparatus and method for making the same | |
| Fan | Preparation of Sn‐doped In2O3 (ITO) films at low deposition temperatures by ion‐beam sputtering | |
| CN105228273B (en) | It is used to prepare precursor solution, Electric radiant Heating Film and the preparation method of semiconductor thermoelectric film | |
| CN102036433B (en) | Infrared electric heating film heating tube with double-film layer structure as well as preparation method and application thereof | |
| CA1059842A (en) | Method of forming tin oxide coating on a glass sheet | |
| CN116197096A (en) | Silicon nitride heating film and preparation method thereof | |
| CN103476156A (en) | Glass ceramic heating substrate coated with inorganic thick film, preparing method and heating assembly | |
| CN111970772A (en) | Heating element based on thermal electronic film and preparation method thereof | |
| CN103781209A (en) | Nano electric heating plate using chemical vapor deposition technology and manufacturing method thereof | |
| CN107935405B (en) | Preparation method of antimony-doped tin oxide electrochromic film | |
| CN109957789A (en) | A kind of high IR emissivity double-layer electric heating film and preparation method thereof | |
| CN114560694B (en) | Preparation method of ceramic PTC thermistor material | |
| CN114732297A (en) | Energy-saving heating structure of oven and heating method thereof | |
| CN110594855B (en) | Control method of gas heating stove with variable bathing heat load and gas heating stove | |
| CN108203807A (en) | A kind of ZnO transparent conductive material with excellent environment stability and preparation method thereof | |
| CN108156675B (en) | Electrothermal film sol and preparation method thereof | |
| CN113950172A (en) | Graphene-based infrared emission heating device | |
| CN109673068B (en) | Production method for manufacturing electrothermal film by using graphene composite nano material | |
| EP4087371A1 (en) | Semiconductor electrothermal film precursor solution and preparation method of semiconductor electrothermal film structure and electrothermal structure | |
| CN109005611A (en) | A kind of Dual-layer electrothermal membrane electrically heated glass | |
| CN113800889B (en) | Carbon Hertz film and application thereof | |
| CN108468019A (en) | A method of transparent conductive film quality is optimized using infrared heating annealing | |
| CN116352100B (en) | Production process of high-performance doped tungsten bar | |
| CN216936289U (en) | High-low temperature ball mill capable of realizing variable temperature control of grinding tank | |
| CN220880548U (en) | Heating control device of single-tube reduction furnace for cobalt powder production |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |