CN111970772A - Heating element based on thermal electronic film and preparation method thereof - Google Patents
Heating element based on thermal electronic film and preparation method thereof Download PDFInfo
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- CN111970772A CN111970772A CN202010900552.3A CN202010900552A CN111970772A CN 111970772 A CN111970772 A CN 111970772A CN 202010900552 A CN202010900552 A CN 202010900552A CN 111970772 A CN111970772 A CN 111970772A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/34—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs
Abstract
The invention discloses a heating element based on a thermal electronic membrane and a preparation method thereof, wherein the preparation method comprises the following steps: step one, SnCl4·5H2Adding O into a mixed solution of ethanol and deionized water, heating, stirring until the O is fully dissolved, adding antimony trichloride, bismuth trichloride and titanium tetrachloride, and stirring uniformly to obtain an electric heating film liquid; placing the preheated tubular matrix in a high-temperature furnace, introducing a vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the tubular matrix, preserving heat, and naturally cooling to obtain an electric heating film layer; wherein the tubular substrate is rotated about a central axis of the tubular substrate within the high temperature furnace; and step three, mixing and batching manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, and spraying the mixture on the outer side of the electric heating film layer to obtain the infrared emission film layer.
Description
Technical Field
The invention belongs to the technical field of thermal electronic films, and particularly relates to a heating element based on a thermal electronic film and a preparation method thereof.
Background
Thermionic films are commonly used as heating elements in electronic appliances, and as household appliances are used more and more, the power, efficiency, energy consumption and carbon emission of these appliances become a focus of social concern. The traditional electric heating element generally has the problems of large thermal inertia, more energy storage, low thermal conversion efficiency, low emission ratio and the like, so that the electric equipment has the defects of large power, low thermal efficiency, high energy consumption and large carbon emission.
Disclosure of Invention
One of the objectives of the present invention is to provide a heating element based on a thermionic film, which has a lower film resistance and a higher emission ratio, and can reduce the energy storage of the heating element and improve the heat conversion rate.
Another object of the present invention is to provide a method for manufacturing a heating element based on a thermionic film, wherein the manufactured heating element has a low film resistance and a high emission ratio.
The invention also improves the uniformity and firmness of the electric heating film layer by the rotating speed of the tubular matrix in the high-temperature furnace, thereby further reducing the film resistance of the heating element and improving the heat conversion efficiency of the heating element.
The technical scheme provided by the invention is as follows:
a thermionic film based heating element comprising:
a tubular base;
the electrothermal film layer is attached to the surface of the tubular substrate;
wherein the electrothermal film layer is formed by vapor deposition of electrothermal film liquid;
the electric heating film liquid comprises the following components:
tin tetrachloride, antimony trichloride, ethanol, bismuth trichloride, titanium tetrachloride and deionized water;
an infrared emission film layer attached to the outer side of the electrothermal film layer;
the infrared emission film layer comprises the following components:
manganese dioxide, nickel sesquioxide, cobalt sesquioxide and chromium oxide.
Preferably, the tubular substrate is a ceramic tube or a quartz glass tube.
Preferably, the electrothermal film liquid comprises the following components in parts by weight:
40-45 parts of stannic chloride, 1.5-1.8 parts of antimony trichloride, 20-23 parts of ethanol, 0.5-0.8 part of bismuth trichloride, 0.6-1 part of titanium tetrachloride and 28-30 parts of deionized water.
Preferably, the infrared emission film layer comprises the following components in parts by weight:
40-50 parts of manganese dioxide, 35-45 parts of nickel sesquioxide, 5-8 parts of cobaltous oxide and 5-8 parts of chromium oxide.
A method for preparing a heating element based on a thermionic film comprises the following steps:
step one, SnCl4·5H2Adding O into a mixed solution of ethanol and deionized water, heating, stirring until the O is fully dissolved, adding antimony trichloride, bismuth trichloride and titanium tetrachloride, and stirring uniformly to obtain an electric heating film liquid;
placing the preheated tubular matrix in a high-temperature furnace, introducing a vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the tubular matrix, preserving heat, and naturally cooling to obtain an electric heating film layer;
wherein the tubular substrate is rotated about a central axis of the tubular substrate within the high temperature furnace;
and step three, mixing and batching manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, and spraying the mixture on the outer side of the electric heating film layer to obtain the infrared emission film layer.
Preferably, the tubular substrate is preheated to 400 to 600 ℃ before the second step.
Preferably, in the second step, the furnace temperature of the high-temperature furnace is 450 to 700 ℃.
Preferably, the heat preservation time in the second step is 15-30 min.
Preferably, the rotation speed of the tubular substrate is:
wherein n represents a correction coefficient0Indicates the reference rotation speed, T indicates the current furnace temperature in the high-temperature furnace, T0Indicates the reference furnace temperature, TgDenotes the initial temperature, T, of the tubular substrate as it enters the furnaceg-0Denotes the reference temperature of the tubular substrate, d is the tube diameter of the tubular substrate, dmaxIs the maximum pipe diameter of the tubular substrate, dminIs the minimum pipe diameter of the tubular substrate.
Preferably, the value range of the correction coefficient is 1.2-1.3.
The invention has the beneficial effects that:
the heating element based on the thermionic membrane provided by the invention has lower membrane resistance and higher emission ratio, and can reduce the energy storage capacity of the heating element and improve the heat conversion rate.
The heating element prepared by the method has lower membrane resistance and higher emission ratio.
The invention can improve the uniformity and firm degree of the electric heating film layer by the rotation speed of the tubular matrix in the high-temperature furnace, thereby further reducing the film resistance of the heating element and improving the heat conversion efficiency of the heating element.
Detailed Description
The present invention is described in further detail below to enable those skilled in the art to practice the invention with reference to the description.
The invention provides a heating element based on a thermionic film, comprising: tubular base member, electric heating film layer and infrared emission film layer. The tubular substrate adopts a ceramic tube or a quartz glass tube; the electrothermal film layer is attached to the surface of the tubular substrate; the infrared emission film layer is attached to the outer side of the electric heating film layer.
The electric heating film layer is formed by electric heating film liquid vapor deposition; the electric heating film liquid comprises the following components: tin tetrachloride, antimony trichloride, ethanol, bismuth trichloride, titanium tetrachloride and deionized water; the weight parts of each component are respectively as follows: 40-45 parts of stannic chloride, 1.5-1.8 parts of antimony trichloride, 20-23 parts of ethanol, 0.5-0.8 part of bismuth trichloride, 0.6-1 part of titanium tetrachloride and 28-30 parts of deionized water.
The infrared emission film layer comprises the following components: manganese dioxide, nickel sesquioxide, cobalt sesquioxide and chromium oxide; the weight parts of each component are respectively as follows: 40-50 parts of manganese dioxide, 35-45 parts of nickel sesquioxide, 5-8 parts of cobaltous oxide and 5-8 parts of chromium oxide.
The invention also provides a preparation method of the heating element based on the thermal electronic film, which comprises the following steps:
step one, SnCl4·5H2Adding O into a mixed solution of ethanol and deionized water, heating to 70-80 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 40-45 parts of stannic chloride, 1.5-1.8 parts of antimony trichloride, 20-23 parts of ethanol, 0.5-0.8 part of bismuth trichloride, 0.6-1 part of titanium tetrachloride and 28-30 parts of deionized water.
And step two, placing the preheated tubular matrix in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the tubular matrix, preserving the heat for 15-30 min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 450-700 ℃; in order to ensure uniform film formation, the tubular matrix rotates around the central shaft of the tubular matrix in the high-temperature furnace.
Wherein, before the second step, the tubular matrix is preheated to 400-600 ℃.
Step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 40-50 parts of manganese dioxide, 35-45 parts of nickel sesquioxide, 5-8 parts of cobaltous oxide and 5-8 parts of chromium oxide. Wherein, the spraying mode of the infrared emission film layer is a conventional spraying mode, and the details are not repeated here.
The temperature in the high-temperature furnace can not be guaranteed to be stable at a value generally, and can only be guaranteed to fluctuate up and down within a range; according to experience, when the temperature in the high-temperature furnace is higher, the tubular matrix can cause a certain position if the rotating speed is lower, and the film forming thickness is overlarge; the size of the pipe diameter and the pipe diameter of the tubular base body can be in a certain relation with the rotating speed. Therefore, in another embodiment, the method further comprises the step of further improving the uniformity and stability of the electrothermal film layer by controlling the rotation speed of the tubular substrate, so that the film resistance of the electrothermal film layer is reduced, and the high heat conversion efficiency of the electric heating element is improved. Wherein the rotation speed of the tubular matrix is controlled as follows:
wherein n represents a correction coefficient0Representing a reference rotating speed with the unit of r/min; t represents the current furnace temperature in the high-temperature furnace, and the unit is; t is0Representing a reference furnace temperature in units of; t isgThe initial temperature of the tubular matrix entering the high-temperature furnace is expressed in units of ℃; t isg-0The base temperature of the tubular substrate is expressed in units of; d is the pipe diameter of the tubular matrix and the unit is mm; dmaxThe maximum pipe diameter of the tubular matrix is in mm; dminIs the minimum pipe diameter of the tubular substrate and has the unit of mm. Preferably, the value range of the correction coefficient is 1.2-1.3, and the reference rotating speed n0The value range of (a) is 80-100 r/min, and the reference furnace temperature T0The value range of (A) is 500-600 ℃; reference temperature T of tubular substrateg-0The value range of (A) is 450-550 ℃.
Example 1
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 70 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 40 parts of stannic chloride, 1.5 parts of antimony trichloride, 20 parts of ethanol, 0.5 part of bismuth trichloride, 0.6 part of titanium tetrachloride and 28 parts of deionized water.
Step two, preheating the quartz glass tube to 400 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 15min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 450 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
Step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 40 parts of manganese dioxide, 45 parts of nickel sesquioxide, 5 parts of cobaltous oxide and 5 parts of chromium oxide.
Example 2
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 75 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 45 parts of stannic chloride, 1.8 parts of antimony trichloride, 23 parts of ethanol, 0.8 part of bismuth trichloride, 1 part of titanium tetrachloride and 30 parts of deionized water.
Step two, preheating the quartz glass tube to 600 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 30min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 700 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
Step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 50 parts of manganese dioxide, 45 parts of nickel sesquioxide, 8 parts of cobaltous oxide and 8 parts of chromium oxide.
Example 3
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 80 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 42 parts of tin tetrachloride, 1.7 parts of antimony trichloride, 21 parts of ethanol, 0.6 part of bismuth trichloride, 0.8 part of titanium tetrachloride and 29 parts of deionized water.
Step two, preheating the quartz glass tube to 500 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 20min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 600 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
Step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 45 parts of manganese dioxide, 38 parts of nickel sesquioxide, 6 parts of cobaltous oxide and 6 parts of chromium oxide.
Example 4
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 80 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 42 parts of tin tetrachloride, 1.7 parts of antimony trichloride, 21 parts of ethanol, 0.6 part of bismuth trichloride, 0.8 part of titanium tetrachloride and 29 parts of deionized water.
Step two, preheating the quartz glass tube to 500 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 20min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 550 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
Step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 45 parts of manganese dioxide, 38 parts of nickel sesquioxide, 6 parts of cobaltous oxide and 6 parts of chromium oxide.
Example 5
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 80 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 42 parts of tin tetrachloride, 1.7 parts of antimony trichloride, 21 parts of ethanol, 0.6 part of bismuth trichloride, 0.8 part of titanium tetrachloride and 29 parts of deionized water.
Step two, preheating the quartz glass tube to 500 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 20min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 550 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
Wherein, according to the sampling period, the rotation speed of the quartz glass tube is controlled as follows:
step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 45 parts of manganese dioxide, 38 parts of nickel sesquioxide, 6 parts of cobaltous oxide and 6 parts of chromium oxide.
Comparative example 1
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 60 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 38 parts of tin tetrachloride, 1.3 parts of antimony trichloride, 18 parts of ethanol, 0.4 part of bismuth trichloride, 0.5 part of titanium tetrachloride and 20 parts of deionized water.
Step two, preheating the quartz glass tube to 400 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 40min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 400 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
Step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 30 parts of manganese dioxide, 20 parts of nickel sesquioxide, 4 parts of cobaltous oxide and 3 parts of chromium oxide.
Comparative example 2
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 60 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 52 parts of stannic chloride, 2.1 parts of antimony trichloride, 25 parts of ethanol, 1.3 parts of bismuth trichloride, 1.6 parts of titanium tetrachloride and 30 parts of deionized water。
Step two, preheating the quartz glass tube to 700 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 10min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 750 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
Step three, mixing manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, grinding, calcining, and spraying on the outer side of the electric heating film layer to obtain an infrared emission film layer; the infrared emission film layer comprises the following components in parts by weight: 55 parts of manganese dioxide, 50 parts of nickel sesquioxide, 15 parts of cobaltous oxide and 10 parts of chromium oxide.
Comparative example 3
Step one, SnCl4·5H2Adding O into the mixed solution of ethanol and deionized water, heating to 80 ℃, and stirring until the O is fully dissolved; and adding antimony trichloride, bismuth trichloride and titanium tetrachloride into the solution, and uniformly stirring to obtain the electrothermal film liquid. The electrothermal film liquid comprises the following components in parts by weight: 42 parts of tin tetrachloride, 1.7 parts of antimony trichloride, 21 parts of ethanol, 0.6 part of bismuth trichloride, 0.8 part of titanium tetrachloride and 29 parts of deionized water.
Step two, preheating the quartz glass tube to 500 ℃, placing the quartz glass tube in a high-temperature furnace, introducing the vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the quartz glass tube, preserving the heat for 20min, and naturally cooling to obtain the electric heating film layer. Wherein, in the process of depositing the electrothermal film liquid, the furnace temperature of the high-temperature furnace is 550 ℃; in order to ensure uniform film formation, the quartz glass tube rotates around the central shaft of the quartz glass tube at a constant speed in the high-temperature furnace.
In each of the examples and comparative examples, after an electric heating film layer was prepared on a quartz glass tube, electrodes were mounted on both ends of the quartz glass tube, and the film resistance between both electrodes of the quartz glass tube was measured with a multimeter; after the heating element is prepared, measuring the spectral emission ratio at 500 ℃ by using an infrared emission ratio testing device; the results obtained are shown in table 1.
TABLE 1 comparative table of film resistance and emission ratio of electronic parts obtained in each of examples and comparative examples
| Film resistance/omega | Emission ratio | |
| Example 1 | 62 | 0.87 |
| Example 2 | 65 | 0.89 |
| Example 3 | 60 | 0.90 |
| Example 4 | 55 | 0.88 |
| Example 5 | 50 | 0.88 |
| Comparative example 1 | 85 | 0.83 |
| Comparative example 2 | 80 | 0.82 |
| Comparative example 3 | 50 | 0.70 |
It can be seen from the above examples and comparative examples that the electronic device prepared according to the formulation and method provided in the present invention has both a small film resistance and a large emission ratio, especially in example 5, the film resistance of the prepared electrothermal film layer is the minimum by controlling the rotation speed of the quartz glass tube; in the comparative examples, the heating elements which are not prepared according to the formulation provided in the invention (comparative examples 1-2) have significantly poorer performance; in comparative example 3, no infrared emission film layer was prepared, and the emission of the heating element was small.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments, which are fully applicable in all kinds of fields of application of the invention, and further modifications may readily be effected by those skilled in the art, so that the invention is not limited to the specific details without departing from the general concept defined by the claims and the scope of equivalents.
Claims (10)
1. A thermionic film based heating element, comprising:
a tubular base;
the electrothermal film layer is attached to the surface of the tubular substrate;
wherein the electrothermal film layer is formed by vapor deposition of electrothermal film liquid;
the electric heating film liquid comprises the following components:
tin tetrachloride, antimony trichloride, ethanol, bismuth trichloride, titanium tetrachloride and deionized water;
an infrared emission film layer attached to the outer side of the electrothermal film layer;
the infrared emission film layer comprises the following components:
manganese dioxide, nickel sesquioxide, cobalt sesquioxide and chromium oxide.
2. The thermionic film based heating element of claim 1 wherein the tubular substrate is a ceramic tube or a quartz glass tube.
3. The thermionic membrane based heating element according to claim 2, wherein the electrocatalytic membrane solution comprises the following components in parts by weight:
40-45 parts of stannic chloride, 1.5-1.8 parts of antimony trichloride, 20-23 parts of ethanol, 0.5-0.8 part of bismuth trichloride, 0.6-1 part of titanium tetrachloride and 28-30 parts of deionized water.
4. The thermionic film based heating element of claim 3, wherein the infrared emission film layer comprises the following components in parts by weight:
40-50 parts of manganese dioxide, 35-45 parts of nickel sesquioxide, 5-8 parts of cobaltous oxide and 5-8 parts of chromium oxide.
5. A method for preparing a heating element based on a thermionic film is characterized by comprising the following steps:
step one, SnCl4·5H2Adding O into a mixed solution of ethanol and deionized water, heating, stirring until the O is fully dissolved, adding antimony trichloride, bismuth trichloride and titanium tetrachloride, and stirring uniformly to obtain an electric heating film liquid;
placing the preheated tubular matrix in a high-temperature furnace, introducing a vaporous electric heating film liquid into the high-temperature furnace, depositing the vaporous electric heating film liquid on the surface of the tubular matrix, preserving heat, and naturally cooling to obtain an electric heating film layer;
wherein the tubular substrate is rotated about a central axis of the tubular substrate within the high temperature furnace;
and step three, mixing and batching manganese dioxide, nickel sesquioxide, cobaltous oxide and chromium oxide, and spraying the mixture on the outer side of the electric heating film layer to obtain the infrared emission film layer.
6. The method of claim 5, wherein the tubular substrate is preheated to 400-600 ℃ before the second step.
7. The method of claim 5 or 6, wherein the high temperature furnace is at a temperature of 450-700 ℃ in the second step.
8. The method of claim 7, wherein the temperature maintaining time in the second step is 15-30 min.
9. A method of manufacturing a thermionic film based heating element as claimed in claim 8, wherein the tubular substrate is rotated at a speed of:
wherein n represents a correction coefficient0Indicates the reference rotation speed, T indicates the current furnace temperature in the high-temperature furnace, T0Indicates the reference furnace temperature, TgDenotes the initial temperature, T, of the tubular substrate as it enters the furnaceg-0Denotes the reference temperature of the tubular substrate, d is the tube diameter of the tubular substrate, dmaxIs the maximum pipe diameter of the tubular substrate, dminIs the minimum pipe diameter of the tubular substrate.
10. The method of claim 9, wherein the correction factor is in a range of 1.2 to 1.3.
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| CN114403504A (en) * | 2022-02-17 | 2022-04-29 | 东莞市中科智恒新材料有限公司 | Superlattice electrothermal film for low-temperature non-combustion electronic cigarette and manufacturing method thereof |
| US20220356073A1 (en) * | 2021-05-07 | 2022-11-10 | Fujian Jingxi New Material Technology Co., Ltd. | Semiconductor electrothermal film precursor solution and preparation method of semiconductor electrothermal film structure and electrothermal structure |
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| US20220356073A1 (en) * | 2021-05-07 | 2022-11-10 | Fujian Jingxi New Material Technology Co., Ltd. | Semiconductor electrothermal film precursor solution and preparation method of semiconductor electrothermal film structure and electrothermal structure |
| US11834346B2 (en) * | 2021-05-07 | 2023-12-05 | Fujian Jingxi New Material Technology Co., Ltd. | Semiconductor electrothermal film precursor solution and preparation method of semiconductor electrothermal film structure and electrothermal structure |
| CN114403504A (en) * | 2022-02-17 | 2022-04-29 | 东莞市中科智恒新材料有限公司 | Superlattice electrothermal film for low-temperature non-combustion electronic cigarette and manufacturing method thereof |
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