CN116193972B - Sensor preparation method and structure - Google Patents
Sensor preparation method and structure Download PDFInfo
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- CN116193972B CN116193972B CN202310465535.5A CN202310465535A CN116193972B CN 116193972 B CN116193972 B CN 116193972B CN 202310465535 A CN202310465535 A CN 202310465535A CN 116193972 B CN116193972 B CN 116193972B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a sensor preparation method and a structure, which are applied to the field of sensor integrated packaging and comprise the following steps: and carrying out wafer level packaging on the special integrated circuit, carrying out wafer level packaging on the functional sensor component independently, selecting the special integrated circuit and the functional sensor component which meet preset conditions and finish wafer level packaging as the special integrated circuit to be connected and the functional sensor component to be connected respectively, conducting the special integrated circuit to be connected with a circuit board, conducting the special integrated circuit to be connected with the functional sensor component to be connected, and finishing sensor preparation. According to the invention, the wafer level packaging is carried out on each sensor component and the special integrated circuit in the sensor to obtain the packaged special integrated circuit and the functional sensor component, and each wafer level packaging component can be used as an independent module, so that the flexibility of product assembly is improved, the damage of an independent device can be avoided to influence the whole sensor, and the product yield is improved.
Description
Technical Field
The invention relates to the field of sensor integrated packaging, in particular to a sensor preparation method and a sensor structure.
Background
In the process of preparing the sensor, the current sensor is taken as an example for explanation, the compound-based Hall sensor and the special integrated circuit are packaged for preparing the current sensor, the compound-based Hall sensor and the special integrated circuit are integrally packaged, the connected Hall sensor and the special integrated circuit are uniformly packaged during preparation, the packaged device is easy to damage in the packaged device, the yield of products cannot be guaranteed, and the reliability of the quality of the prepared current sensor is reduced.
Disclosure of Invention
In view of the above, the invention aims to provide a method and a structure for manufacturing a sensor, which solve the problems that the inside of a packaged device is easy to damage, the yield of products cannot be ensured, and the reliability of the quality of the manufactured current sensor is reduced in the prior art.
In order to solve the technical problems, the invention provides a sensor preparation method, which comprises the following steps:
wafer-level packaging is carried out on the special integrated circuit, and wafer-level packaging is carried out on the functional sensor component independently;
selecting an application specific integrated circuit and a functional sensor component which meet preset conditions and finish wafer level packaging as an application specific integrated circuit to be connected and a functional sensor component to be connected respectively;
the special integrated circuit to be connected is connected with a circuit board in a conductive way;
and conducting connection between the to-be-connected special integrated circuit and the to-be-connected functional sensor component to finish sensor preparation.
Optionally, the wafer level packaging of the asic and the wafer level packaging of the functional sensor component individually include:
separately packaging the first functional sensor component and the application specific integrated circuit at a wafer level;
correspondingly, the special integrated circuit to be connected is connected with the circuit board in a conductive way; conducting the to-be-connected application specific integrated circuit with the to-be-connected functional sensor component, including:
electrically connecting one side of the to-be-connected special integrated circuit with the circuit board;
and the side, facing away from the circuit board, of the to-be-connected special integrated circuit is connected with the to-be-connected first functional sensor component in a conductive mode.
Optionally, the electrically conductive connection between the side of the to-be-connected asic facing away from the circuit board and the to-be-connected first functional sensor component includes:
and bonding and connecting the convex solder balls extending out of the first functional sensor component to be connected with a substrate bonding pad on the side of the special integrated circuit to be connected, which is opposite to the circuit board.
Optionally, the electrically connecting one side of the to-be-connected asic with the circuit board includes:
and welding one side of the special integrated circuit to be connected with the circuit board so as to lead the convex solder ball on one side of the special integrated circuit to be connected, which is welded with the circuit board, to be connected with the circuit board in a conductive way.
Optionally, the bump solder ball on the side to be soldered with the circuit board in the to-be-connected application specific integrated circuit is electrically connected with the circuit board, and the bump solder ball comprises:
the convex solder balls in the to-be-connected application specific integrated circuit extend into the circuit board and are connected with the circuit board in a conductive mode.
Optionally, the wafer level packaging of the first functional sensor component includes:
forming a first dry film paste layer on a structure of a micro-electromechanical system prepared on a first substrate;
etching the first dry film pasting layer to form at least one dry film pasting support; the dry film applying support is arranged beside a bonding pad in the micro-electromechanical system;
forming a second dry film coating layer on the dry film coating support column, and etching the second dry film coating layer corresponding to the upper side of the bonding pad in the micro-electromechanical system to form a second dry film coating layer through hole;
and preparing a convex solder ball on the bonding pad in the micro-electromechanical system, and extending out of the through hole of the second dry film pasting layer to obtain the first functional sensor component to be connected.
Optionally, the forming a first dry film coating layer on the structure of the mems on the first substrate includes:
forming a first dry film coating layer on a structure with a plurality of micro-electromechanical systems prepared on the first substrate;
correspondingly, after the first functional sensor component to be connected is obtained, the method further comprises:
and cutting the to-be-connected first functional sensor component to obtain a single first functional sensor component.
Optionally, the wafer level packaging of the asic includes:
forming a third dry film coating layer on the structure of the special integrated circuit chip prepared on the second substrate;
etching the third dry film pasting layer to form at least one dry film pasting support; the dry film applying support is arranged beside a bonding pad in the special integrated circuit chip;
forming a fourth dry film coating layer on the dry film coating support column, and etching the fourth dry film coating layer corresponding to the upper side of the bonding pad electrically connected with the circuit board in the special integrated circuit chip to form a fourth dry film coating layer through hole;
and preparing a convex solder ball on a bonding pad which is electrically connected with the circuit board in the special integrated circuit chip, and extending out of the fourth dry film pasting layer through hole to obtain the special integrated circuit to be connected.
Optionally, after the obtaining the to-be-connected asic, the method further includes:
in the special integrated circuit chip, a bonding pad connected with the first functional sensor component in a conductive way is provided with a bonding pad through hole at a corresponding position in the second substrate so as to expose the bonding pad connected with the first functional sensor component in the special integrated circuit chip;
and filling the substrate metal wire in the pad through hole.
The invention also provides a sensor structure comprising:
an application specific integrated circuit that completes wafer level packaging, a functional sensor component that completes wafer level packaging, and a circuit board;
the functional sensor component is in conductive connection with the application specific integrated circuit, and the circuit board is in conductive connection with the application specific integrated circuit.
It can be seen that the method for preparing a sensor provided by the invention comprises the steps of carrying out wafer level packaging on an application specific integrated circuit, carrying out wafer level packaging on a functional sensor component independently, selecting the application specific integrated circuit and the functional sensor component which meet preset conditions and finish wafer level packaging as an application specific integrated circuit to be connected and a functional sensor component to be connected respectively, conducting the application specific integrated circuit to be connected with a circuit board, conducting the application specific integrated circuit to be connected with the functional sensor component to be connected, and finishing the preparation of the sensor. According to the invention, the wafer level packaging is carried out on each sensor component and the special integrated circuit in the sensor to obtain the packaged special integrated circuit and the functional sensor component, and each wafer level packaging component can be used as an independent module, so that the flexibility of product assembly is improved, the damage of an independent device can be avoided to influence the whole sensor, and the product yield is improved.
In addition, the invention also provides a sensor structure which has the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for manufacturing a sensor according to an embodiment of the present invention;
FIG. 2 is a flow chart of a wafer level package of a first functional sensor component according to an embodiment of the present invention;
FIG. 3 is a flowchart illustrating a wafer level package of a first functional sensor component according to an embodiment of the present invention;
FIG. 4 is a flow chart of an ASIC wafer level package according to an embodiment of the present invention;
FIG. 5 is a flowchart of another method for manufacturing a sensor according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a sensor structure according to an embodiment of the present invention;
in fig. 6, reference numerals are explained as follows:
10-completing a functional sensor component of the wafer level package;
20-completing the special integrated circuit of the wafer level package;
30-circuit board.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring to fig. 1, fig. 1 is a flowchart of a method for manufacturing a sensor according to an embodiment of the invention. The method may include:
s101: and carrying out wafer level packaging on the special integrated circuit, and carrying out wafer level packaging on the functional sensor component independently.
In this embodiment, the ASIC (application specific integrated circuit) is individually packaged at the wafer level, and the functional sensor component is individually packaged at the wafer level, so that the application specific integrated circuit and the functional sensor which complete the wafer level package are used as separate components. In the preparation process of the sensors, when a plurality of functional sensors need to be packaged, the plurality of sensors can be packaged at wafer level independently, so that the separability of components is further improved.
The embodiment is not limited to the specific manner of wafer level packaging. For example, a System In Package (SIP) method, a redistribution layer package (RDL) method, or other specific packaging methods may be used. The present embodiment is not limited to a specific number of asic's that are packaged at one time at a wafer level. For example, the number of asic's for single wafer level packaging may be 1, or the number of asic's for single wafer level packaging may be plural, for example, 2, or 5, which is not particularly limited in this embodiment. Accordingly, the present embodiments do not limit the specific number of functional sensor components that are packaged at one time at the wafer level. For example, the number of functional sensor components that are packaged at a single time may be 1, or the number of functional sensor components that are packaged at a single time may be plural, for example, may be 2, or may be 4. The number of functional sensor components for wafer level packaging is not limited, and may be set according to the actual application scenario of the sensor. For example, the types of the functional sensor components to be wafer-level packaged may be 1, or the types of the functional sensor components to be wafer-level packaged may be plural, for example, 2, or 3.
S102: and selecting the special integrated circuit and the functional sensor component which meet preset conditions and finish wafer level packaging as the special integrated circuit to be connected and the functional sensor component to be connected respectively.
In this embodiment, the preset conditions may be criteria set according to the requirements of the operator and the actual application scenario. The embodiment is not limited to the specific content of the preset condition, as long as the actual requirement of the sensor preparation can be satisfied. For example, the preset condition may be that the output power of the asic and the functional sensor component that complete the wafer level package is within a preset output power interval; or the preset condition can be that the structures of the special integrated circuit and the functional sensor component which are packaged in the wafer level are not damaged; or the preset condition can be that the other performances of the special integrated circuit and the functional sensor component which are packaged in the wafer level reach the preset performance standard, or the preset condition can be the standard which is set by the user definition of an operator, or any combination of the above. Further, the embodiment does not limit the specific content that the output power of the asic and the functional sensor component that complete the wafer level package is within the preset output power interval. For example, the total output power of the asic and the functional sensor component that complete the wafer level package may be in a preset output power interval, or the asic and the functional sensor component that complete the wafer level package may be respectively in corresponding preset output power intervals, or the asic that complete the wafer level package may be in a first preset output power interval, and the functional sensor component that complete the wafer level package is in a second preset output power interval. Accordingly, the present embodiment is not limited to the specific details of the structure of the asic and the functional sensor component that complete the wafer level package without damage. For example, the structure of the asic and the functional sensor component that completes the wafer level package is not damaged, and may include complete packaging of the entire structure, or may include complete fabrication of conductive connections of the structure, or may include standard attainment of structural stability and other performance metrics, or may include any combination of the foregoing.
It should be noted that, through selecting the special integrated circuit and the functional sensor component which meet the preset conditions and finish the wafer level packaging, and respectively serve as the special integrated circuit to be connected and the functional sensor component to be connected, the special integrated circuit and the functional sensor which are packaged independently can be screened, the special integrated circuit and the functional sensor component which meet the requirements and finish the wafer level packaging are obtained, the damage of the whole sensor caused by the damage of the single component when the special integrated circuit and the functional sensor component are packaged after the whole preparation is avoided, the flexibility of the sensor preparation is improved, and the excellent rate of the sensor preparation is improved.
S103: and connecting the special integrated circuit to be connected with the circuit board in a conductive way.
It should be noted that, in this embodiment, the to-be-connected application specific integrated circuit is electrically connected to the PCB (circuit board) to realize the electrical connectivity of the device preparation. The embodiment is not limited to a specific manner of conducting connection between the to-be-connected asic and the circuit board, as long as the to-be-connected asic and the circuit board can be firmly and electrically connected. For example, the special integrated circuit to be connected and the circuit board can be electrically connected in a wire bonding manner, or the special integrated circuit to be connected and the circuit board can be electrically connected in a direct bonding manner by arranging convex solder balls, or the special integrated circuit to be connected and the circuit board can be electrically connected in other manners.
S104: and conducting connection between the to-be-connected special integrated circuit and the to-be-connected functional sensor component to complete the preparation of the sensor.
Accordingly, the embodiment is not limited to the specific manner in which the asic is electrically connected to the functional sensor component. For example, the to-be-connected application specific integrated circuit and the to-be-connected functional sensor component can be electrically connected in a wire bonding mode; or the special integrated circuit to be connected and the functional sensor component to be connected can be electrically connected in a direct bonding mode by arranging a convex solder ball; or the special integrated circuit to be connected and the functional sensor component to be connected can be electrically connected in other ways.
Further, after the to-be-connected application specific integrated circuit is electrically connected with the to-be-connected functional sensor component, the method may further include:
and packaging the prepared sensor integrally.
In this embodiment, the sensor is packaged as a whole after the sensor is manufactured, so that the sealability of the sensor can be further improved. The embodiment is not limited to the specific material that encapsulates the sensor. For example, the material for packaging the sensor as a whole may be a silicone material, or may be a plastic packaging material, or may be other insulating materials. In order to reduce the stress problem between different materials generated by packaging the sensor, the packaging material can be a silica gel material.
Further, in order to improve the applicability of the sensor preparation and improve the preparation efficiency of the sensor, the wafer level packaging of the application specific integrated circuit and the wafer level packaging of the functional sensor component individually may include:
the first functional sensor component and the application specific integrated circuit are individually wafer level packaged.
Correspondingly, the special integrated circuit to be connected is connected with the circuit board in a conductive way; the application specific integrated circuit to be connected and the functional sensor component to be connected are connected in a conductive manner, and the method can comprise the following steps:
one side of the special integrated circuit to be connected is connected with the circuit board in a conductive way;
and one side of the to-be-connected special integrated circuit, which is opposite to the circuit board, is connected with the to-be-connected first functional sensor component in a conductive manner.
In this embodiment, the first functional sensor component and the asic are individually packaged at the wafer level, where the first functional sensor component may be a hall current sensor component when the current sensor is prepared. The special integrated circuit is electrically connected with the circuit board and the first functional sensor component along two opposite sides of the alignment, so that the first functional sensor component and the special integrated circuit are electrically connected in the structure preparation process.
Further, in order to ensure that the wafer level packaging of the first functional sensor component can be completed and ensure the conductive connection efficiency between the first functional sensor component and the outside, which completes the wafer level packaging, the wafer level packaging of the first functional sensor component may include the following steps. Referring to fig. 2 in particular, fig. 2 is a flowchart of a wafer level package of a first functional sensor component according to an embodiment of the present invention.
S201: a first dry film paste layer is formed on a structure for fabricating a microelectromechanical system on a first substrate.
It should be noted that, when the prepared sensor is a current sensor, the first functional sensor component in this embodiment may be a hall sensor chip. The hall sensor chip is generally manufactured by using silicon or a compound as a substrate and using a Micro Electro Mechanical System (MEMS) process on a 6-inch or 8-inch wafer, and the wafer level package is introduced by taking the preparation of the hall sensor as an example. The dry film pasting layer in the embodiment can be a three-layer lamination structure consisting of a polyester film, a polyolefin film and a photosensitive film, and has good stripping property and easy removal. The present embodiment is not limited to a particular number of mems fabrication on the first substrate. For example, the number of the mems prepared on the first substrate may be 1, or the number of the mems prepared on the first substrate may be plural, for example, may be 2, or may be 5.
S202: etching the first dry film pasting layer to form at least one dry film pasting support; the dry film application post is disposed beside the bonding pad in the mems.
In this embodiment, at least one dry film applying pillar is formed at the side of the bonding pad in the mems by etching the first dry film applying layer, and the first dry film applying layer outside the dry film applying pillar is completely removed, exposing the first substrate and the mems. The present embodiment does not limit the specific number of dry film application struts formed. For example, 1 dry film application strut may be formed, or 3 dry film application struts may be formed, or 5 dry film application struts may be formed.
S203: and forming a second dry film coating layer on the dry film coating support post, and etching in the second dry film coating layer corresponding to the upper side of the bonding pad in the micro-electromechanical system to form a second dry film coating layer through hole.
In this embodiment, the second dry film coating layer is formed on the upper side of the formed dry film coating post, and the cavity structure is formed between the first substrate, the dry film coating post and the second dry film coating layer, and the mems is in the formed cavity structure. In addition, through holes may be etched in the second dry film paste layer at positions corresponding to the pads in the mems in the vertical direction as the second dry film paste layer through holes so that the pads in the mems can be electrically connected to the outside.
S204: preparing a convex solder ball on a bonding pad in the micro-electromechanical system, and extending out of a second dry film pasting layer through hole to obtain a first functional sensor component to be connected.
It should be noted that, in this embodiment, the bump solder ball is prepared on the pad in the mems, and the second dry film coating layer through hole is extended, so that the insulating tightness of the first functional sensor component is ensured, and meanwhile, the first functional sensor component can be electrically connected with the outside, and no additional lead is required, so that the stability of the electrically conductive connection between the first functional sensor component and the outside is improved. For better understanding of the present invention, the wafer level packaging process of the first functional sensor component may refer to fig. 3, and fig. 3 is a flowchart illustrating an example of wafer level packaging of the first functional sensor component according to an embodiment of the present invention.
Further, in order to improve the efficiency of wafer level packaging the first functional sensor component, the forming a first dry film coating layer on the first substrate to prepare the structure of the mems may include:
forming a first dry film coating layer on a structure with a plurality of micro-electromechanical systems prepared on a first substrate;
accordingly, after obtaining the first functional sensor component to be connected, it may further include:
cutting the first functional sensor components to be connected to obtain single first functional sensor components.
It should be noted that, in this embodiment, the wafer level package is performed by the structure in which the plurality of mems are fabricated on the first substrate, so that the fabrication of the plurality of first functional sensor components can be completed at the same time, and the efficiency of wafer level package of the first functional sensor components is improved. Correspondingly, after the packaging of the plurality of first functional sensor components is finished, the first functional sensor components to be connected are cut, and a single first functional sensor component is obtained.
Further, in order to ensure that the wafer level packaging of the asic can be completed and the conductive connection efficiency between the asic and the outside can be ensured, the wafer level packaging of the asic may include the following steps. Referring to fig. 4 in particular, fig. 4 is a flowchart of an asic wafer level package according to an embodiment of the present invention.
S301: a third dry film coating layer is formed on the structure of the special integrated circuit chip prepared on the second substrate.
It should be noted that, conventional ASIC (application specific integrated circuit) chips are typically fabricated using conventional IC (integrated circuit manufacturing) processes on 8-inch wafers using silicon as a substrate. Accordingly, the present embodiment is not limited to a specific number of asic chips fabricated on the second substrate. For example, the number of asic chips prepared on the second substrate may be 1, or the number of asic chips prepared on the second substrate may be plural, for example, 2 or 5.
S302: etching the third dry film pasting layer to form at least one dry film pasting support; the dry film application support is arranged beside the bonding pad in the application specific integrated circuit chip.
In this embodiment, at least one dry film applying pillar is formed at the side of the bonding pad in the asic chip by etching the third dry film applying layer, and the third dry film applying layer outside the dry film applying pillar is completely removed to expose the second substrate and asic chip. Accordingly, the present embodiment is not limited to a specific number of dry film application pillars formed by etching the third dry film application layer. For example, 1 dry film application strut may be formed, or 3 dry film application struts may be formed, or 5 dry film application struts may be formed.
S303: and forming a fourth dry film coating layer on the dry film coating support post, and etching in the fourth dry film coating layer corresponding to the upper side of the bonding pad electrically connected with the circuit board in the special integrated circuit chip to form a fourth dry film coating layer through hole.
In the embodiment, a fourth dry film coating layer is formed on the upper side of the formed dry film coating post, and a cavity structure is formed between the second substrate, the dry film coating post and the fourth dry film coating layer, and the asic chip is in the formed cavity structure. Further, by etching a through hole in the fourth dry film paste layer at a position corresponding to a pad in the asic chip in the vertical direction, the through hole is used as the fourth dry film paste layer to enable the pad in the asic chip to be electrically connected to the outside.
S304: in the special integrated circuit chip, a bump solder ball is prepared on a bonding pad which is electrically connected with the circuit board, and a fourth dry film pasting layer through hole is extended to obtain the special integrated circuit to be connected.
It should be noted that, correspondingly, in this embodiment, the bump solder ball is prepared on the pad in the asic chip, and the fourth dry film coating layer through hole is extended, so that the asic insulating tightness is ensured, and meanwhile, the asic can be electrically connected with the outside, and no additional lead is required, so that the stability of the asic and the external conductive connection is improved.
Further, in order to enable direct bonding connection between the first functional sensor and the asic, no additional lead is required, and after obtaining the asic to be connected, the method may further include:
in the special integrated circuit chip, a bonding pad which is electrically connected with the first functional sensor component is provided with a bonding pad through hole at a corresponding position in the second substrate, so that the bonding pad which is electrically connected with the first functional sensor component is exposed in the special integrated circuit chip;
and filling the substrate metal wire in the pad through hole.
In this embodiment, the pad through hole is opened at the substrate position corresponding to the pad electrically connected with the first functional sensor component in the asic chip, and the pad through hole is filled into the substrate metal wire, so that the first functional sensor component and the asic can be directly bonded when electrically connected with each other, and the stability of the electrically conductive connection is improved.
The method for preparing the sensor provided by the embodiment of the invention comprises the steps of carrying out wafer-level packaging on the special integrated circuit, carrying out wafer-level packaging on the functional sensor component independently, selecting the special integrated circuit and the functional sensor component which meet preset conditions and finish wafer-level packaging as the special integrated circuit to be connected and the functional sensor component to be connected respectively, conducting the special integrated circuit to be connected with the circuit board, conducting the special integrated circuit to be connected with the functional sensor component to be connected, and finishing the preparation of the sensor. According to the invention, the wafer level packaging is carried out on each sensor component and the special integrated circuit in the sensor to obtain the packaged special integrated circuit and the functional sensor component, and each wafer level packaging component can be used as an independent module, so that the flexibility of product assembly is improved, the damage of an independent device can be avoided to influence the whole sensor, and the product yield is improved. In addition, the wafer-level packaging is carried out on the first functional sensor component by utilizing the dry film pasting layer, a cavity structure is formed inside, and through holes are etched at packaging positions corresponding to the bonding pads of the first functional sensor component, so that the bonding pads can be in conductive connection with the outside through the convex solder balls, the insulating tightness of the first functional sensor component is ensured, meanwhile, the first functional sensor component can be in conductive connection with the outside, no additional lead is needed, and the stability of the conductive connection between the first functional sensor component and the outside is improved; the wafer level packaging is carried out by preparing the structure with the plurality of micro-electromechanical systems on the first substrate, and cutting is carried out after the wafer level packaging is completed, so that the wafer level packaging of the plurality of first functional sensor components can be carried out at a time, and the efficiency of the wafer level packaging of the first functional sensor components is improved; through carrying out wafer level packaging on the special integrated circuit, a cavity structure is formed inside, and in the corresponding special integrated circuit chip, through holes are etched at packaging positions of bonding pads electrically connected with a circuit board, the bonding pads can be electrically connected with the outside through protruding solder balls, further, substrate positions corresponding to bonding pads electrically connected with the first functional sensor component in the special integrated circuit chip are etched through holes, substrate metal connecting wires are filled, the special integrated circuit is guaranteed to finish wafer level packaging, meanwhile, the conductive connection efficiency of the special integrated circuit and the outside is improved, and when the first functional sensor component and the special integrated circuit are electrically connected, the first functional sensor component and the special integrated circuit can be directly bonded without additional lead wires, so that the stability and convenience of conductive connection are improved.
Example 2
Referring to fig. 5, fig. 5 is a flowchart of another method for manufacturing a sensor according to an embodiment of the invention. The method may include:
s401: the first functional sensor component and the application specific integrated circuit are individually wafer level packaged.
S402: and selecting the special integrated circuit and the functional sensor component which meet preset conditions and finish wafer level packaging as the special integrated circuit to be connected and the functional sensor component to be connected respectively.
S403: and one side of the special integrated circuit to be connected is connected with the circuit board in a conductive way.
S404: and bonding and connecting the convex solder balls extending out of the first functional sensor component to be connected with a substrate bonding pad on the side of the special integrated circuit to be connected, which is opposite to the circuit board.
It should be noted that, in this embodiment, the bump solder balls extending from the to-be-connected first functional sensor component are bonded and connected with the substrate pad on the side of the to-be-connected application-specific integrated circuit opposite to the circuit board, and no extra lead is required to be introduced for bonding, so that the bump solder balls extending from the first functional sensor component are directly bonded and connected with the substrate pad on the side of the to-be-connected application-specific integrated circuit opposite to the circuit board, thereby improving the connection stability and convenience of the bump solder balls and the to-be-connected application-specific integrated circuit. The number of the bump solder balls extending out of the first functional sensor component in this embodiment may be plural, and the number of the substrate pads on the side of the to-be-connected asic facing away from the circuit board corresponds to the number of the bump solder balls.
The embodiment is not limited to a specific manner in which the bump solder balls extending from the first functional sensor component are bonded to the substrate pads on the side of the asic opposite to the circuit board. For example, flip chip bonding, bump forming, thermocompression bonding, reflow soldering, or other specific bonding may be used.
Further, in order to ensure the stability of the conductive connection between the to-be-connected asic and the circuit board, the conductive connection between the to-be-connected asic and the circuit board may include:
and welding one side of the special integrated circuit to be connected with the circuit board so as to lead the convex solder ball on one side of the special integrated circuit to be connected, which is welded with the circuit board, to be connected with the circuit board in a conductive way.
In the to-be-connected asic of the present embodiment, the number of the bump solder balls soldered to the circuit board may be plural, which is not limited in the present embodiment.
Further, in order to improve the tightness of the conductive connection between the to-be-connected asic and the circuit board and avoid external interference, the conductive connection between the bump solder ball on the side of the to-be-connected asic soldered to the circuit board and the circuit board may include:
the bump solder balls in the special integrated circuit to be connected extend into the circuit board and are connected with the circuit board in a conductive manner.
It should be noted that, the bump solder ball in the to-be-connected asic extends into the circuit board and is electrically connected with the circuit board, so that the position of the circuit board electrically connected with the to-be-connected asic can be set inside, and external interference is avoided.
The method for preparing the sensor provided by the embodiment of the invention comprises the steps of carrying out wafer-level packaging on the special integrated circuit, carrying out wafer-level packaging on the functional sensor component independently, selecting the special integrated circuit and the functional sensor component which meet preset conditions and finish wafer-level packaging as the special integrated circuit to be connected and the functional sensor component to be connected respectively, conducting the special integrated circuit to be connected with the circuit board, conducting the special integrated circuit to be connected with the functional sensor component to be connected, and finishing the preparation of the sensor. According to the invention, the wafer level packaging is carried out on each sensor component and the special integrated circuit in the sensor to obtain the packaged special integrated circuit and the functional sensor components, each wafer level packaging component can be used as an independent module, the flexibility of product assembly is improved, meanwhile, the damage of an independent device can be avoided to influence the whole sensor, the product yield is improved, the protruding solder balls extending from the first functional sensor component to be connected are connected with the substrate bonding pads on the side of the special integrated circuit to be connected, which are opposite to the circuit board, without introducing extra leads for bonding, and the protruding solder balls extending from the first functional sensor component are directly connected with the substrate bonding pads on the side of the special integrated circuit to be connected, so that the connection stability and convenience of the protruding solder balls and the substrate bonding pads on the side of the special integrated circuit to be connected are improved. In addition, one side of the special integrated circuit to be connected is welded with the circuit board, so that the convex solder balls on one side of the special integrated circuit to be connected, which are welded with the circuit board, are electrically connected with the circuit board, and the stability of the electrically conductive connection between the special integrated circuit to be connected and the circuit board can be ensured; the special integrated circuit to be connected is characterized in that the protruding solder balls extend into the circuit board and are connected with the circuit board in a conductive mode, so that the position of the circuit board, which is connected with the special integrated circuit to be connected in a conductive mode, is arranged inside, and external interference is avoided.
In order to facilitate understanding of the present invention, the preparation method of the sensor provided by the present invention specifically may include:
step S1: the first functional sensor component and the application specific integrated circuit are individually wafer level packaged.
Step S2: and selecting the special integrated circuit and the functional sensor component which meet preset conditions and finish wafer level packaging as the special integrated circuit to be connected and the functional sensor component to be connected respectively.
Step S3: and one side of the special integrated circuit to be connected is connected with the circuit board in a conductive way.
Step S4: and one side of the to-be-connected special integrated circuit, which is opposite to the circuit board, is connected with the to-be-connected first functional sensor component in a conductive manner.
The invention further provides a sensor structure, the sensor structure provided by the embodiment of the invention is introduced, and the sensor structure described below and the preparation method of the sensor can be correspondingly referred to each other.
Referring to fig. 6, fig. 6 is a schematic diagram of a sensor structure according to an embodiment of the present invention, which may include:
an application specific integrated circuit 20 completing the wafer level package, a functional sensor component 10 completing the wafer level package, and a circuit board 30;
the functional sensor component 10 is electrically connected to the asic 20 and the circuit board 30 is electrically connected to the asic 20.
The sensor structure provided by the embodiment of the invention comprises an application specific integrated circuit 20 for completing the wafer level package, a functional sensor component 10 for completing the wafer level package and a circuit board 30, wherein the functional sensor component 10 is in conductive connection with the application specific integrated circuit 20, and the circuit board 30 is in conductive connection with the application specific integrated circuit 20. According to the invention, the wafer level packaging is carried out on each functional sensor component and the special integrated circuit in the sensor to obtain the packaged special integrated circuit 20 and the functional sensor component 10, each wafer level packaging component can be used as an independent module, so that the flexibility of product assembly is improved, meanwhile, the damage of an independent device can be prevented from affecting the whole sensor, and the product yield is improved.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, so that the same or similar parts between the embodiments are referred to each other.
Finally, it is further noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprise," "include," or any other variation thereof, are intended to cover a non-exclusive inclusion.
The above description of the preparation method and structure of a sensor provided by the present invention has been presented in detail, and a plurality of specific examples are applied to illustrate the present invention, and the above description of the embodiments is only for helping to understand the method and core idea of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (8)
1. A method of manufacturing a sensor, comprising:
wafer-level packaging is carried out on the special integrated circuit, and wafer-level packaging is carried out on the functional sensor component independently;
selecting an application specific integrated circuit and a functional sensor component which meet preset conditions and finish wafer level packaging as an application specific integrated circuit to be connected and a functional sensor component to be connected respectively;
the special integrated circuit to be connected is connected with a circuit board in a conductive way;
conducting connection between the to-be-connected special integrated circuit and the to-be-connected functional sensor component to finish sensor preparation;
the wafer level packaging of the application specific integrated circuit and the wafer level packaging of the functional sensor component independently comprise:
separately packaging the first functional sensor component and the application specific integrated circuit at a wafer level;
correspondingly, the special integrated circuit to be connected is connected with the circuit board in a conductive way; conducting the to-be-connected application specific integrated circuit with the to-be-connected functional sensor component, including:
electrically connecting one side of the to-be-connected special integrated circuit with the circuit board;
the side, facing away from the circuit board, of the special integrated circuit to be connected is electrically connected with the first functional sensor component to be connected;
the wafer level packaging of the first functional sensor component includes:
forming a first dry film paste layer on a structure of a micro-electromechanical system prepared on a first substrate;
etching the first dry film pasting layer to form at least one dry film pasting support; the dry film applying support is arranged beside a bonding pad in the micro-electromechanical system;
forming a second dry film coating layer on the dry film coating support column, and etching the second dry film coating layer corresponding to the upper side of the bonding pad in the micro-electromechanical system to form a second dry film coating layer through hole; a cavity is formed between the dry film applying support and the second dry film applying layer;
and preparing a convex solder ball on the bonding pad in the micro-electromechanical system, and extending out of the through hole of the second dry film pasting layer to obtain the first functional sensor component to be connected.
2. The method for manufacturing a sensor according to claim 1, wherein the step of conductively connecting the side of the asic to be connected facing away from the circuit board to the first functional sensor component to be connected comprises:
and bonding and connecting the convex solder balls extending out of the first functional sensor component to be connected with a substrate bonding pad on the side of the special integrated circuit to be connected, which is opposite to the circuit board.
3. The method for manufacturing a sensor according to claim 1, wherein the electrically connecting the side of the asic to be connected to the circuit board comprises:
and welding one side of the special integrated circuit to be connected with the circuit board so as to lead the convex solder ball on one side of the special integrated circuit to be connected, which is welded with the circuit board, to be connected with the circuit board in a conductive way.
4. The method for manufacturing a sensor according to claim 3, wherein the bump solder ball on the side of the to-be-connected asic soldered to the circuit board is electrically connected to the circuit board, and the method comprises:
the convex solder balls in the to-be-connected application specific integrated circuit extend into the circuit board and are connected with the circuit board in a conductive mode.
5. The method of claim 1, wherein forming a first dry film paste layer on the structure of the mems on the first substrate comprises:
forming a first dry film coating layer on a structure with a plurality of micro-electromechanical systems prepared on the first substrate;
correspondingly, after the first functional sensor component to be connected is obtained, the method further comprises:
and cutting the to-be-connected first functional sensor component to obtain a single first functional sensor component.
6. The method of claim 1, wherein the wafer level packaging of the asic comprises:
forming a third dry film coating layer on the structure of the special integrated circuit chip prepared on the second substrate;
etching the third dry film pasting layer to form at least one dry film pasting support; the dry film applying support is arranged beside a bonding pad in the special integrated circuit chip;
forming a fourth dry film coating layer on the dry film coating support column, and etching the fourth dry film coating layer corresponding to the upper side of the bonding pad electrically connected with the circuit board in the special integrated circuit chip to form a fourth dry film coating layer through hole;
and preparing a convex solder ball on a bonding pad which is electrically connected with the circuit board in the special integrated circuit chip, and extending out of the fourth dry film pasting layer through hole to obtain the special integrated circuit to be connected.
7. The method of manufacturing a sensor according to claim 6, further comprising, after said obtaining said to-be-connected asic:
in the special integrated circuit chip, a bonding pad connected with the first functional sensor component in a conductive way is provided with a bonding pad through hole at a corresponding position in the second substrate so as to expose the bonding pad connected with the first functional sensor component in the special integrated circuit chip;
and filling the substrate metal wire in the pad through hole.
8. A sensor prepared by the method of any one of claims 1 to 7, comprising:
an application specific integrated circuit that completes wafer level packaging, a functional sensor component that completes wafer level packaging, and a circuit board;
the functional sensor component is in conductive connection with the application specific integrated circuit, and the circuit board is in conductive connection with the application specific integrated circuit;
the functional sensor component that completes the wafer level package includes a first functional sensor component having a microelectromechanical system disposed in a cavity formed by a dry film application post and a second dry film application layer.
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| CN108928802B (en) * | 2017-05-27 | 2024-08-09 | 成都万应微电子有限公司 | Chip wafer packaging method, micro-electromechanical system packaging method and micro-electromechanical system |
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