CN116193963B - Pyroelectric sensitive element batch die bonding process and pyroelectric sensor - Google Patents
Pyroelectric sensitive element batch die bonding process and pyroelectric sensor Download PDFInfo
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- CN116193963B CN116193963B CN202310455199.6A CN202310455199A CN116193963B CN 116193963 B CN116193963 B CN 116193963B CN 202310455199 A CN202310455199 A CN 202310455199A CN 116193963 B CN116193963 B CN 116193963B
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Abstract
The invention discloses a pyroelectric sensitive element batch die bonding process and a pyroelectric sensor, and relates to the technical field of infrared sensors. According to the pyroelectric sensing element batch die bonding process provided by the invention, a plurality of solder balls or solder ball columns are implanted on the surface of the metal lower electrode, the sensing element is fixedly connected with the bonding pad through the solder balls or the solder ball columns, and meanwhile, the solder balls or the solder ball columns form a supporting structure of the sensing element, so that the subsequent packaging is facilitated; the chip obtained by adopting the die bonding process can lead out the electric signal through the solder ball or the solder ball column without additional leads, thereby simplifying the circuit design of the product, reducing the size of the product, improving the process integration level and realizing the miniaturization of the device. Compared with the traditional die bonding process adopting a supporting structure, the die bonding process has larger error tolerance of the geometric center alignment of the sensitive element wafer and the bonding pad in the welding process of the sensitive element wafer and the bonding pad; the invention takes the sensitive wafer as a unit, and can realize the batch die bonding of chips.
Description
Technical Field
The invention relates to the technical field of infrared sensors, in particular to a pyroelectric sensing element batch die bonding process and a pyroelectric sensor.
Background
Some materials absorb a certain amount of charges on the surface of the materials in order to maintain the surface in a neutral state, and when the materials are subjected to heat radiation to cause temperature change, the electric dipole moment of the materials is correspondingly changed, and in order to maintain the surface in a neutral state, the charges are released from the surface of the materials, and the phenomenon is called a pyroelectric effect. The pyroelectric infrared detector prepared by using the pyroelectric effect is widely used for fire early warning and alarming, gas detection and analysis, spectral analysis and the like. The sensitive element is a core element of the infrared pyroelectric detector, and the thickness of the sensitive element can influence the performance of the sensor.
At present, the preparation of the sensitive element of the infrared pyroelectric detector adopts mechanical grinding and polishing to reduce the thickness of the sensitive element and improve the performance of the sensitive element. The thinned sensitive element is generally fixed on the support column or the support base through a die bonding process for facilitating subsequent packaging, and the die bonding process generally comprises the steps of dispensing, die bonding (fixing a support structure), baking, dispensing by the support structure, die expanding, die bonding (sensitive element), baking and the like. The size of the support column or the support base is large, and the support structure itself needs to be fixed, so that the whole die bonding process of the sensitive element is complex. However, the die bonding process is easy to have the problem of large assembly error, so that the deviation of the geometrical center of the sensitive element and the exact center of the supporting structure is large, and a large noise signal can be brought. In addition, the size of the sensitive element and the supporting structure obtained by the process in the vertical direction is large, the product can only be packaged by TO, and the whole product size can not be miniaturized.
In the existing TO packaging, direct-insertion or patch packaging sensor, a sensitive element generally needs TO be a supporting component, and the supporting component adopts a part with a customized size bonded by conductive adhesive as a supporting piece; and the surface mounted type sensor adopting the BGA ball output surface mount device also needs to use a small amount of solder paste (the solder paste only plays a role of connection) to fix the BGA ball finished product, and then pass through procedures such as furnace welding and the like to finish the installation of the surface mounted type fixed BGA ball. This results in a relatively complex packaging process, particularly when the support member or BGA ball is custom sized for the height of the support. For example, CN 217083967U adopts a solder paste integrated support, the solder paste integrated support still needs to be mounted on the substrate, and after the solder paste is coated on the solder pad of the solder paste integrated support, the solder paste is melted and solidified by a reflow oven to complete the die bonding process.
Disclosure of Invention
The invention aims to solve the technical problems that the die bonding process of the sensitive element is complex, and the size of the product is difficult to miniaturize.
In order to solve the problems, the invention provides the following technical scheme:
in a first aspect, the present invention provides a mass die bonding process for pyroelectric sensing elements, comprising the steps of:
s1, depositing a metal lower electrode on the surface of the thinned and polished sensitive element;
s2, implanting a plurality of solder balls or solder ball columns on the surface of the metal lower electrode;
s3, placing the sensitive element obtained in the step S2 at a bonding pad position of a substrate, printing soldering flux on the bonding pad in advance, and fixing the solder ball or the solder ball column on the substrate by adopting a reflow soldering process so as to connect the sensitive element with the substrate.
The further technical scheme is that in the step S1, before thinning and polishing, the sensitive element further comprises the following steps:
depositing a metal upper electrode on one surface of a lithium tantalate sensitive wafer;
preparing an absorption layer on the surface of the metal upper electrode;
attaching a substrate to the absorbent layer;
thinning and polishing the surface of the lithium tantalate sensitive wafer, which is away from the absorption layer;
the metal bottom electrode is located on a face facing away from the absorber layer.
The technical scheme is that the position of implanting solder balls or solder ball columns on the surface of the metal lower electrode corresponds to the lead bonding area of the metal upper electrode.
In a further technical scheme, in the step S2, the specific operation of implanting a plurality of solder balls or solder ball columns on the surface of the metal bottom electrode includes:
arranging a screen plate on the surface of the metal lower electrode, wherein the screen plate is provided with a window, and the window position corresponds to the position of a solder ball or a solder ball column;
and printing soldering paste on the screen plate to obtain solder balls or solder ball columns, and removing the screen plate.
The technical scheme is that the interval between adjacent solder balls or solder ball columns is not less than half of the diameter of the solder balls or the diameter of the section of the solder ball columns.
The diameter of the solder ball is not less than 100 μm; the cross-sectional diameter of the solder ball post is not less than 100 mu m, and the height is not less than 100 mu m. The solder ball or the solder ball column can prevent the pyroelectric sensing element from directly contacting with the substrate after the reflow soldering process, and ensure that the solder ball or the solder ball column normally plays a supporting role.
In a second aspect, the invention provides a pyroelectric sensing element, and the preparation method of the pyroelectric sensing element comprises the mass die bonding process of the pyroelectric sensing element in the first aspect.
In a third aspect, the present invention provides a pyroelectric sensor comprising the pyroelectric sensing element of the second aspect.
Compared with the prior art, the invention has the following technical effects:
according to the pyroelectric sensing element batch die bonding process provided by the invention, a plurality of solder balls or solder ball columns are implanted on the surface of the metal lower electrode, the sensing element is fixedly connected with the bonding pad through the solder balls or the solder ball columns, and meanwhile, the solder balls or the solder ball columns form a supporting structure of the sensing element, so that the subsequent packaging is facilitated; the chip obtained by adopting the die bonding process can lead out the electric signal through the solder ball or the solder ball column without additional leads, thereby simplifying the circuit design of the product, reducing the size of the product, improving the process integration level and realizing the miniaturization of the device.
Compared with the traditional die bonding process adopting a supporting structure, the die bonding process has larger error tolerance of the geometric center alignment of the sensitive element wafer and the bonding pad in the welding process of the sensitive element wafer and the bonding pad; the invention takes the sensitive wafer as a unit, and can realize the batch die bonding of chips.
Further, in the batch die bonding process, the positions of the solder balls or the solder ball columns correspond to the lead bonding areas of the metal upper electrodes, so that the support of the wire bonding part is ensured, and the stability and the reliability of subsequent assembly are ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a process for mass die bonding of pyroelectric sensing elements according to an embodiment of the present invention, wherein a is a schematic diagram of a metal upper electrode deposited on a wafer surface of a lithium tantalate sensing element; b is a schematic structural diagram of depositing an absorption layer on the surface of the upper electrode of the metal; c is a schematic structural diagram of bonding of the lithium tantalate sensitive wafer deposited with the absorption layer and the substrate; d is a schematic structural diagram of the thinned and polished lithium tantalate sensitive wafer; e is a structural schematic diagram of a lower electrode of a lithium tantalate sensitive wafer deposited metal; f is a schematic structure diagram of implanting a plurality of solder balls or solder ball columns on the surface of the metal bottom electrode.
Fig. 2 is a schematic diagram of the morphology of a single chip implanted solder ball or solder ball pillar according to an embodiment of the present invention, wherein a is a schematic diagram of the positions of the corresponding solder balls or solder ball pillars when the center and the edge of the chip are wire bonding areas; and b is a schematic diagram of the positions of the corresponding solder balls or solder ball columns when the edge of the chip is a wire bonding area.
Fig. 3 is a schematic diagram of a pyroelectric sensor package according to an embodiment of the present invention.
Reference numerals
1.1 lithium tantalate sensitive wafer; 1.2 a metal upper electrode; 1.3 an absorbent layer; 1.4 a substrate; 1.5, a metal bottom electrode; 1.6 solder balls or solder ball pillars; 3.1, a base; 3.2 cover plate; 3.3 pyroelectric sensitive element; 3.4 wire bonding; 3.5 Conditioning chip or op-amp/JFET devices.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, in which like reference numerals represent like components. It will be apparent that the embodiments described below are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the embodiments of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of embodiments of the invention. As used in the specification of the embodiments of the invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In the present invention, the term "ball implant" refers to the implantation of solder balls or solder ball columns.
Example 1
Referring to parts e and f in fig. 1, the invention provides a pyroelectric sensing element batch die bonding process, which comprises the following steps:
s1, depositing a metal lower electrode 1.5 on the surface of a thinned and polished lithium tantalate sensitive wafer 1.1;
s2, implanting a plurality of solder balls or solder ball columns 1.6 on the surface of the metal lower electrode 1.5;
s3, placing the sensitive element obtained in the S2 at a bonding pad position of a substrate, printing soldering flux on the bonding pad in advance, and fixing the solder ball or the solder ball column 1.6 on the substrate by adopting a reflow soldering process so as to connect the sensitive element with the substrate.
In a specific implementation, the flux may be a solder paste.
In a specific implementation, the substrate is a PCB/ceramic substrate.
In a specific implementation, the interval between adjacent solder balls or solder ball columns is not less than half the diameter of the solder balls or the diameter of the cross section of the solder ball columns.
In specific implementation, the diameter of the solder balls is not less than 100 μm; the cross-sectional diameter of the solder ball post is not less than 100 mu m, and the height is not less than 100 mu m. The solder ball or the solder ball column with the size can prevent the pyroelectric sensing element from directly contacting with the substrate after the reflow soldering process, and ensure that the solder ball or the solder ball column normally plays a supporting role.
According to the pyroelectric sensing element batch die bonding process provided by the embodiment, a plurality of solder balls or solder ball columns are implanted on the surface of the metal lower electrode, the sensing element is fixedly connected with the bonding pad through the solder balls or the solder ball columns, and meanwhile, the solder balls or the solder ball columns form a supporting structure of the sensing element, so that subsequent packaging is facilitated; in addition, the chip obtained by adopting the die bonding process can lead out the electric signal through the solder ball or the solder ball column without additional leads, thereby simplifying the circuit design of the product, reducing the size of the product, improving the process integration level and realizing the miniaturization of the device.
Compared with the traditional die bonding process adopting a supporting structure, the die bonding process has larger error tolerance of the geometric center alignment of the sensitive element wafer and the bonding pad in the welding process of the sensitive element wafer and the bonding pad; the invention takes the sensitive wafer as a unit, and can realize the batch die bonding of chips.
Referring to a-f in fig. 1, in a specific embodiment, in step S1, the sensing element further includes the following steps before the thinning and polishing:
one side of a lithium tantalate sensitive element wafer 1.1 is deposited with a metal upper electrode 1.2, specifically a Lithium Tantalate (LT) sensitive element double-throw wafer with a raw material of hundreds of microns is used, and deposition of the metal upper electrode is carried out on an LT positive electrode in a magnetron sputtering or vapor deposition mode;
preparing an absorption layer 1.3 on the surface of the metal upper electrode 1.2, specifically preparing the absorption layer on the surface of the metal upper electrode by an ink-jet printing or screen printing mode;
attaching a substrate 1.4 to the absorbent layer 1.3;
thinning and polishing the surface of the lithium tantalate sensitive element wafer 1.1, which is away from the absorption layer 1.3, so that the roughness of the sensitive element surface is reduced to a nano level;
and depositing a metal lower electrode 1.5 on the surface of the thinned and polished sensitive element in a magnetron sputtering or evaporation mode, wherein the metal lower electrode 1.5 is positioned on the surface away from the absorption layer.
In a specific embodiment, the solder balls or solder ball columns are located corresponding to wire bonding areas of the metal upper electrode.
For example, in the case of the chip shown in the portion a of fig. 2, when the wire bonding area of the metal upper electrode is located at the center and the edge of the chip, the solder balls or solder ball pillars are correspondingly located at the center and the edge of the chip.
For example, in the portion b of fig. 2, when the wire bonding area of the metal upper electrode is located at the edge of the chip, the solder ball or the solder ball pillar is correspondingly located at the edge of the chip.
In this embodiment, the positions of the solder balls or the solder ball columns correspond to the wire bonding areas of the metal upper electrodes, the positions of the solder balls or the solder ball columns are matched with the wire bonding areas, the ball mounting areas are more flexible, the wire bonding part is ensured to be supported, and the stability and the reliability of subsequent assembly are ensured.
In one embodiment, in the step S2, the specific operation of implanting a plurality of solder balls or solder ball columns on the surface of the metal bottom electrode includes:
arranging a screen plate on the surface of the metal lower electrode, wherein the screen plate is provided with a window, and the window position corresponds to the position of a solder ball or a solder ball column;
and printing soldering paste on the screen plate to obtain solder balls or solder ball columns, and removing the screen plate.
It should be noted that the wafer size of the pyroelectric sensing element is usually 2-6 inches, and in the ball-mounting process, the size of the screen printing area used is matched with the wafer size. The batch die bonding process of the invention adopts a smaller screen printing area, so that the screen printing precision can be improved, the manufacturing difficulty of the screen printing plate can be reduced, and the production cost can be reduced; the batch ball implantation of the whole wafer can be completed by only one-time printing, so that the stability of the ball implantation process is ensured, and meanwhile, the production efficiency is remarkably improved. And because the solder ball or the solder ball column is positioned on the surface of the wafer of the sensitive element, under the premise of controlling the screen printing precision, when the subsequent sensitive element is bonded with the bonding pad on the substrate for reflow soldering and fixing, the error tolerance of the geometric center alignment of the two is larger, and the reliability of the die bonding process of the sensitive element is greatly improved.
Example 2
The embodiment of the invention provides a pyroelectric sensitive element, and a preparation method of the pyroelectric sensitive element comprises the pyroelectric sensitive element batch die bonding process described in the embodiment 1.
Further, the embodiment of the invention also provides a pyroelectric sensor which comprises the pyroelectric sensitive element.
Referring to fig. 3, the pyroelectric sensing element 3.3 and the conditioning chip or the operational amplifier/JFET and other elements 3.5 are connected by a circuit on a substrate through a wire bonding 3.4 process to form a signal output circuit, finally the cover plate 3.2 of the specific band filter is integrated on a cap, and then the cap and the base 3.1 are assembled together through vacuum seal welding to form a detector element.
The chip prepared by adopting the process of die bonding in batches is matched with the lead bonding area, the electric signal is led out through the die bonding, no extra lead is needed, the circuit design of a product is simplified, the product size is reduced, the process integration level is improved, the miniaturization of a device can be realized, the internal integration level of a detector can be obviously improved, and a smaller packaging form, such as the patch packaging form of fig. 3, can be realized besides the common TO packaging.
In the foregoing embodiments, the descriptions of the embodiments are focused on, and for those portions of one embodiment that are not described in detail, reference may be made to the related descriptions of other embodiments.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (9)
1. The mass die bonding process of the pyroelectric sensing element is characterized by comprising the following steps of:
s1, depositing a metal lower electrode on the surface of the thinned and polished sensitive element;
s2, implanting a plurality of solder balls or solder ball columns on the surface of the metal lower electrode;
s3, placing the sensitive element obtained in the S2 at a bonding pad position of the substrate, and fixing the solder ball or the solder ball column on the substrate by adopting a reflow soldering process so as to connect the sensitive element with the substrate.
2. The mass die bonding process of pyroelectric sensing elements according to claim 1, wherein in the step S1, the sensing elements further comprise the following steps before the thinning and polishing:
depositing a metal upper electrode on one surface of a lithium tantalate sensitive wafer;
preparing an absorption layer on the surface of the metal upper electrode;
attaching a substrate to the absorbent layer;
thinning and polishing the surface of the lithium tantalate sensitive wafer, which is away from the absorption layer;
the metal bottom electrode is located on a face facing away from the absorber layer.
3. The mass die attach process of claim 2 wherein the metal bottom electrode has a solder ball or a solder ball post implanted therein corresponding to the wire bond area of the metal top electrode.
4. The mass die bonding process of pyroelectric sensing elements according to claim 2, wherein in the step S2, the specific operation of implanting a plurality of solder balls or solder ball columns on the surface of the metal bottom electrode comprises:
arranging a screen plate on the surface of the metal lower electrode, wherein the screen plate is provided with a window, and the window position corresponds to the position of a solder ball or a solder ball column;
and printing soldering paste on the screen plate to obtain solder balls or solder ball columns, and removing the screen plate.
5. The mass die bonding process of pyroelectric sensing elements as recited in claim 1 wherein in step S3, soldering flux is pre-printed on the bonding pads.
6. The process of claim 1, wherein the spacing between adjacent solder balls or solder ball pillars is not less than half the diameter of the solder balls or half the diameter of the cross-section of the solder ball pillars.
7. The mass die bonding process of pyroelectric sensing elements according to claim 1, wherein the diameter of the solder balls is not smaller than 100 μm; the cross-sectional diameter of the solder ball post is not less than 100 mu m, and the height is not less than 100 mu m.
8. The pyroelectric sensing element preparation method is characterized by comprising the pyroelectric sensing element batch die bonding process according to any one of claims 1-7.
9. A pyroelectric sensor comprising the pyroelectric sensor of claim 8.
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| EP1361657B1 (en) * | 2001-02-06 | 2013-07-24 | Panasonic Corporation | Surface acoustic wave device |
| US8436304B2 (en) * | 2010-09-09 | 2013-05-07 | Texas Instruments Incorporated | Infrared light transmissivity for a membrane sensor |
| KR20130121831A (en) * | 2010-09-24 | 2013-11-06 | 엔이씨 도낀 가부시끼가이샤 | Pyroelectric infrared detecting device, and method for replacing pyroelectric element in pyroelectric infrared detecting device |
| CN116018043A (en) * | 2022-11-15 | 2023-04-25 | 深圳市美思先端电子有限公司 | Pyroelectric sensor and preparation method thereof |
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| US6175114B1 (en) * | 1993-10-29 | 2001-01-16 | Murata Manufacturing Co., Ltd. | Pyroelectric infrared array sensor |
| JPH08247843A (en) * | 1995-03-09 | 1996-09-27 | Nikon Corp | Pyroelectric type infrared-ray solid state imaging device and its manufacture |
| JPH11326037A (en) * | 1998-05-12 | 1999-11-26 | Mitsubishi Electric Corp | Vacuum package for infrared detector and its manufacture |
| JP2001066184A (en) * | 1999-08-31 | 2001-03-16 | Miyota Kk | Pyroelectric infrared sensor |
| CN204535856U (en) * | 2014-10-27 | 2015-08-05 | 南阳森霸光电股份有限公司 | A kind of SMD pyroelectric infrared sensor |
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