CN116193895A - Display panel manufacturing method and display device - Google Patents

Abstract

The embodiment of the application provides a preparation method of a display panel and a display device, which belong to the technical field of display, and the preparation method comprises the following steps: providing a substrate; forming a metal layer on one side of the substrate, wherein the metal layer comprises at least one partition structure, the partition structure comprises a flat area and a plurality of raised areas surrounding the flat area, and the distance from one side of the raised areas, which is away from the substrate, to the substrate is larger than the distance from one side of the flat area, which is away from the substrate, to the substrate; and forming an anode layer on one side of the metal layer, which is away from the substrate, and forming an auxiliary electrode layer on one side of the partition structure, which is away from the substrate, wherein the orthographic projection of the anode layer on the substrate and the orthographic projection of the auxiliary electrode layer on the substrate are not overlapped. According to the manufacturing method of the display panel and the display device, the phenomenon that the auxiliary electrode is broken can be reduced, and the product yield is improved.

Description

Display panel manufacturing method and display device

Technical Field

The embodiment of the application relates to the technical field of display, in particular to a preparation method of a display panel and a display device.

Background

Recently, large-sized OLED (Organic Light-Emitting Diode) products are becoming new growing hot spots due to their high contrast and self-luminescence. Whereas for large size OLEDs, the top-emitting structure has a higher aperture ratio and higher pixels than the bottom-emitting structure.

In the design of display products with oversized OLED top-emission structures, auxiliary electrode technology must be used to reduce the voltage drop at the cathode of the thin film transistor, so the method of cathode bridging auxiliary electrode is an important technology.

At present, the auxiliary electrode forming method is easy to generate fracture phenomenon, so that the yield of products is reduced.

Disclosure of Invention

The embodiment of the application provides a preparation method of a display panel, which aims to reduce the occurrence of the phenomenon of auxiliary electrode fracture and improve the product yield.

An embodiment of the present application provides a method for manufacturing a display panel, where the method includes:

providing a substrate;

forming a metal layer on one side of the substrate, wherein the metal layer comprises at least one partition structure, the partition structure comprises a flat area and a plurality of raised areas surrounding the flat area, and the distance from one side of the raised areas, which faces away from the substrate, to the substrate is larger than the distance from one side of the flat area, which faces away from the substrate, to the substrate;

and forming an anode layer on one side of the metal layer, which is away from the substrate, and forming an auxiliary electrode layer on one side of the partition structure, which is away from the substrate, wherein the orthographic projection of the anode layer on the substrate and the orthographic projection of the auxiliary electrode layer on the substrate are not overlapped.

Optionally, the partition structure includes a first side wall and a second side wall in the raised area, wherein one side of the first side wall is connected with the flat area, the other side is connected with the second side wall, and a distance from the second side wall to the substrate is greater than a distance from the flat area to the substrate.

Optionally, before the step of forming the metal layer on one side of the substrate, the preparation method further includes:

a flat layer is formed on one side of the substrate base plate, the flat layer comprises a plurality of protruding structures, and the positions of the protruding structures correspond to the positions of protruding areas of the partition structures.

Optionally, after the step of forming the metal layer on one side of the substrate base plate, the preparation method further includes:

and etching the convex structure of the flat layer through an etching process.

Optionally, the anode is arranged in the same layer as the auxiliary electrode.

Optionally, the metal layer includes a plurality of isolation structures, and an auxiliary electrode layer is formed on a side of each isolation structure facing away from the substrate.

Optionally, the anode layer has a thickness of greater than or equal to 200nm and less than or equal to 1000nm.

Optionally, the auxiliary electrode layer has a thickness of 200nm or more and 1000nm or less.

Optionally, the metal layer has a thickness of greater than or equal to 1000 angstroms and less than or equal to 1400 angstroms.

Optionally, the material of the metal layer includes: al, mo and ITO.

Optionally, the thickness of the planar layer is greater than or equal to 2000nm and less than or equal to 3500nm.

Optionally, an anode layer is formed on a side of the metal layer away from the substrate, and after the step of forming an auxiliary electrode layer on a side of the partition structure away from the substrate, the preparation method further includes:

sequentially forming a light-emitting layer and a cathode layer on one side of the anode layer and the auxiliary electrode layer, which is away from the substrate;

wherein the cathode layer is in metal connection with the auxiliary electrode.

Optionally, the substrate comprises a thin film transistor substrate.

Optionally, before the step of forming the flat layer on one side of the substrate base plate, the preparation method further includes:

a passivation layer is formed on one side of the substrate base plate.

A second aspect of the embodiments of the present application provides a display device, including a display panel, where the display panel is prepared by the method for preparing a display panel provided in the first aspect of the embodiments of the present application.

The beneficial effects are that:

the application provides a preparation method of a display panel and a display device, wherein a metal layer is formed on a substrate, the metal layer comprises at least one partition structure, the partition structure comprises a flat area and a plurality of raised areas surrounding the flat area, and then an anode layer and an auxiliary electrode layer are formed on one side, away from the substrate, of the metal layer and the partition structure; therefore, when the display panel is manufactured, the anode layer can be disconnected at the position of the raised area by the partition structure in the process of forming the anode layer, and the auxiliary electrode layer is formed on the partition structure.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments of the present application will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a flowchart illustrating steps of a method for manufacturing a display panel according to an embodiment of the present disclosure;

fig. 2 is a schematic plan view of a display panel according to an embodiment of the present disclosure, in which the fabrication of a substrate and a metal layer is completed;

FIG. 3 is a schematic view of the structure of section C-C' of FIG. 2;

fig. 4 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure after manufacturing a substrate;

fig. 5 is a schematic structural diagram of a display panel manufactured by a manufacturing method of a flat layer and a metal layer according to an embodiment of the present disclosure.

Reference numerals illustrate: 20. a substrate base; 201. a substrate; 202. a light shielding layer; 203. a buffer layer; 204. an active layer; 205. a gate insulating layer; 206. a gate; 207. an interlayer dielectric layer; 208. a source/drain electrode; 209. a passivation layer; 30. a metal layer; 301. a partition structure; 3011. a first sidewall; 3012. a second sidewall; 3013. a third sidewall; 40. an anode layer; 50. an auxiliary electrode layer; 60. a bump structure; A. a flat region; B. raised areas.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

In the related art, in the process of manufacturing a display panel, generally, the preparation of a flat layer is firstly completed, then the passivation layer is etched to complete the patterning of the passivation layer, and then the preparation of an auxiliary electrode and an anode is respectively completed after a metal layer is deposited. Meanwhile, the auxiliary electrode in the related art is of an I-shaped structure, and is prepared by adopting a wet etching process, and in the preparation process, units such as a hairbrush, high-pressure water washing, an air knife drying and the like are needed, so that the tip of the I-shaped auxiliary electrode layer is easy to break, and the yield of products is reduced.

In view of this, an embodiment of the present application proposes a manufacturing method of a display panel, a display device, by forming a metal layer on a substrate, the metal layer including at least one partition structure, wherein the partition structure includes a flat region and a plurality of raised regions surrounding the flat region, and then forming an anode layer and an auxiliary electrode layer on a side of the metal layer and the partition structure facing away from the substrate; therefore, when the display panel is manufactured, the anode layer can be disconnected at the position of the raised area by the partition structure in the process of forming the anode layer, and the auxiliary electrode layer is formed on the partition structure.

Fig. 1 shows a flow chart of steps of a method for manufacturing a display panel. Referring to fig. 1, a method for manufacturing a display panel according to an embodiment of the present application is shown, where the method includes:

step 101: a substrate base 20 is provided.

Specifically, referring to fig. 4, the base substrate 20 may include a thin film transistor (Thin Film Transistor, TFT) substrate. The thin film transistor substrate may include, in order from bottom to top, a substrate 201, a light shielding layer 202, a buffer layer 203, an active layer 204, a gate insulating layer 205, a gate 206, an interlayer dielectric layer 207, and a source/drain 208.

The material of the substrate 201 may include glass, and the thickness of the substrate 201 may be 50 μm or more and 1000 μm or less; illustratively, the thickness of the substrate 201 may be 50 μm, 100 μm, 200 μm, 500 μm, 1000 μm, etc., and may be selected by those skilled in the art according to actual requirements.

The light shielding layer 202 is disposed on the substrate, the light shielding layer 202 may be deposited by a sputtering process, patterning of the light shielding layer 202 is completed after a photolithography process and a wet etching process, and then photoresist on the surface of the light shielding layer 202 is stripped to complete the preparation of the light shielding layer 202.

The buffer layer 203 may be deposited by a PECVD (Plasma Enhanced Chemical Vapor Deposition ) process; the material of the buffer layer 203 may include one or more of SiNx, siOx, or SiOxNy; the thickness of the buffer layer 203 may be 150nm or more and 500nm or less. Illustratively, the thickness of the buffer layer 203 may be 150nm, 200nm, 300nm, 400nm, 500nm, etc., and may be selected by those skilled in the art according to actual needs.

The active layer 204 may be formed on a side of the buffer layer 203 facing away from the substrate through a sputtering process, and then patterning of the active layer 204 is completed through a photolithography process and a wet etching process, and photoresist on the surface of the active layer 204 is stripped, and the oxide of the active layer 204 may include an amorphous oxide such as IGZO, znON, ITZO.

The gate insulating layer 205 may be formed on a side of the active layer 204 facing away from the buffer layer 203 by a CVD (Chemical Vapor Deposition, vapor deposition) process; the gate electrode 206 may be formed on a side of the gate insulating layer 205 facing away from the active layer by a sputtering process, and patterning of the gate electrode 206 is completed by a photolithography process and a wet etching process while the photoresist is kept from peeling, and patterning of the gate insulating layer 205 is completed by a dry etching process while the photoresist on the gate electrode 206 is continued to be used as a mask; the material of the gate 206 may include Al, mo, cr, cu, ti, etc.; the gate 206 may have a thickness of greater than or equal to 200nm and less than or equal to 1000nm. Illustratively, the gate 206 may have a thickness of 200nm, 300nm, 500nm, 800nm, 1000nm, etc., and may be selected by one skilled in the art according to actual requirements.

Before the interlayer dielectric layer 207 is prepared, any one of NH3, N2 and H2 gas may be used to perform a conductive treatment on the oxide of the active layer 204 exposed to the outside so as to reduce the ohmic contact resistance with the source/drain electrode 208; then, an interlayer dielectric layer 207 can be prepared by deposition through a PECVD process, an ILD hole and a CNT hole pattern are defined through a photoetching process, and a contact via hole between the source drain electrode 208 and the active layer 204 is obtained through a dry etching process; the material of the interlayer dielectric layer 207 may include SiNx or SiOx; also, the interlayer dielectric layer 207 may have a single-layer film structure or a multi-layer film structure.

The source drain electrode 208 may be formed on a side of the interlayer dielectric layer 207 facing away from the gate electrode 206 through a sputtering process, and patterning of the source drain electrode 208 is completed through a photolithography process and a wet etching process, and materials of the source drain electrode 208 may include Al, mo, cr, cu, ti and the like; the thickness of the source drain 208 may be greater than or equal to 200nm and less than or equal to 1000nm. Illustratively, the thickness of the source/drain 208 may be 200nm, 300nm, 500nm, 800nm, 1000nm, etc., and those skilled in the art may choose according to actual requirements.

Step 102: a metal layer 30 is formed on one side of the substrate 20, the metal layer 30 includes at least one isolation structure 301, the isolation structure 301 includes a flat area a and a plurality of raised areas B surrounding the flat area a, wherein a distance from the side of the raised areas B facing away from the substrate 20 to the substrate 20 is greater than a distance from the side of the flat area a facing away from the substrate 20 to the substrate 20.

Specifically, referring to fig. 2 and 3, the metal layer 30 may be formed on the base substrate 20 through a sputtering process. The material of the metal layer 30 may include Al, mo, ITO, and the like; in the embodiment of the present application, the material of the metal layer 30 is ITO. The thickness of the metal layer 30 may be greater than or equal to 1000 angstroms and less than or equal to 1400 angstroms, and illustratively, the thickness of the metal layer 30 may be 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, etc., and may be selected by one skilled in the art according to practical requirements.

Referring to fig. 2, the partition structure 301 includes a flat area a and a plurality of protruding areas B surrounding the flat area a, it will be appreciated that the protruding areas B may separate the flat area a from the remaining metal layer 30 outside the flat area a. It is also understood that the metal layer 30 includes a blocking region and a non-blocking region, wherein the blocking structure 301 is formed in the blocking region. In practical production, the partition structure 301 is generally provided in a plurality, and the metal layer 30 also includes a plurality of separate partition regions, and each partition region includes one partition structure 301 therein.

Further, referring to fig. 3, the distance from the side of the protruding region B facing away from the substrate 20 to the substrate 20 is greater than the distance from the side of the flat region a facing away from the substrate 20 to the substrate 20, that is, the height of the protruding region B in the display panel is greater than the height of the flat region a, so that the flat region a can be separated from the non-partitioned region of the metal layer 30.

Specifically, referring to fig. 3, the partition structure 301 includes a first sidewall 3011 and a second sidewall 3012 in the protruding region B, wherein one side of the first sidewall 3011 is connected to the flat region a, the other side is connected to the second sidewall 3012, and a distance from a side of the second sidewall 3012 facing away from the substrate 20 to the substrate 20 is greater than a distance from a side of the flat region a facing away from the substrate 20 to the substrate 20. That is, the height of the second sidewall 3012 in the display panel is greater than that of the flat region a, and there is no connection between the second sidewall 3012 and the metal layer 30 in the non-partition region, so that the anode layer 40 is disconnected at the position of the protruding region B during the subsequent formation of the anode layer 40.

Next, the formation of the partition structure 301 will be described in the embodiment of the present application.

Before the step of forming the metal layer 30 on one side of the substrate 20, the preparation method further includes:

a planarization layer is formed on one side of the substrate base 20, the planarization layer includes a plurality of protrusion structures 60, and the positions of the protrusion structures 60 correspond to the positions of the protrusion regions B of the partition structure 301.

In particular, the planar layer material may comprise a resin or other organic material. The thickness of the planar layer may be greater than or equal to 2000nm and less than or equal to 3500nm. Illustratively, the thickness of the planar layer may be 2000nm, 2500nm, 3000nm, 3500nm, etc., and may be selected by those skilled in the art according to actual requirements.

Referring to fig. 5, the position of the protruding region B of the partition structure 301 may be previously divided on the substrate during the manufacturing process, and the planarization layer may be patterned by an etching process during the formation of the planarization layer such that the planarization layer forms the protruding structure 60 at the position of the protruding region. Subsequently, a metal layer 30 is formed on the side of the planar layer facing away from the substrate 20, and the metal layer 30 forms the shape of the protruding region B of the isolation structure 301 at the location of the protruding structure 60.

Meanwhile, after the step of forming the metal layer 30 on one side of the substrate base 20, the manufacturing method further includes:

the raised structures 60 of the planar layer are etched by an etching process.

Specifically, after forming the metal layer 30, the bump structure 60 needs to be etched to form the bump area B of the partition structure 301. During etching, part of the metal layer 30 at the position of the protruding region B needs to be etched first, and dry etching ashing technology can be adopted in the etching technology.

Referring to fig. 5, in the embodiment of the present application, the protruding structure 60 is in a trapezoid shape, where one side wall of the trapezoid is adjacent to the flat area a, and the other side wall is adjacent to the metal layer 30 on the outer side, so that the metal layer 30 is also in a trapezoid structure at the location of the protruding structure 60, where the trapezoid structure includes a first side wall 3011, a second side wall 3012, and a third side wall 3013, where the first side wall 3011 is connected to the flat area a, the second side wall 3012 is disposed between the first side wall 3011 and the third side wall 3013, and the third side wall 3013 is connected to the metal layer 30 on the outer side of the non-partition area, during etching, the third side wall 3013 needs to be etched away, and then the protruding structure 60 located in the trapezoid structure is etched away, so that the protruding area B of the partition structure 301 can be formed finally.

Step 103: an anode layer 40 is formed on a side of the metal layer 30 facing away from the substrate 20, and an auxiliary electrode layer 50 is formed on a side of the partition structure 301 facing away from the substrate 20, wherein the front projection of the anode layer 40 on the substrate 20 and the front projection of the auxiliary electrode layer 50 on the substrate 40 do not overlap.

Specifically, referring to fig. 3, the anode layer 40 and the auxiliary electrode layer 50 may be formed by a sputtering process, and the material of the anode layer 40 may include Al, mo, ITO and the like. The thickness of the anode layer 40 may be greater than or equal to 200nm and less than or equal to 1000nm. Illustratively, the thickness of the anode layer 40 may be 200nm, 300nm, 500nm, 800nm, 1000nm, etc., and those skilled in the art may choose according to actual needs.

Also, in the embodiment of the present application, the anode layer 40 and the auxiliary electrode layer 50 are provided in the same layer, that is, the anode layer 40 and the auxiliary electrode layer 50 are made of the same material and by the same process in the same step. It will be appreciated that the anode layer 40 is formed in the non-partitioned area of the metal layer 30, and the auxiliary electrode layer 50 is formed on the partitioned structure 301 of the partitioned area, and that the anode layer 40 and the auxiliary electrode layer 50 are different only in positional relationship.

Specifically, in the process of preparing the anode layer 40 and the auxiliary electrode layer 50, the partition structure 301 may complete cutting of the anode layer 40 (that is, the anode layer 40 may be cut at the protruding region B of the partition structure 301, so that the anode layer 40 covered on the partition structure 301 serves as the auxiliary electrode layer 50), so that the anode layer 40 cannot completely cover the partition structure 301, and thus the auxiliary electrode layer 50 may play a role in auxiliary conduction.

Meanwhile, when the metal layer 30 includes a plurality of barrier structures 301, an auxiliary electrode layer 50 is formed on a side of each barrier structure 301 facing away from the substrate 20.

Through the above preparation method of the embodiment of the application, the cutting of the anode layer 40 and the formation of the auxiliary electrode layer 50 are realized through the partition structure 301, so that the preparation steps of the auxiliary electrode layer 50 are simplified, and meanwhile, the partition structure 301 adopts a dry etching ashing process, so that high-voltage impact is avoided, the auxiliary electrode layer 50 is not easy to break, and the product yield is improved.

Further, in the embodiment of the present application, before the step of forming the metal layer 30 on one side of the substrate 20, the preparation method further includes:

a passivation layer 209 is formed on one side of the substrate 20.

Specifically, referring to fig. 4, a passivation layer 209 covers the substrate 20, the passivation layer 209 may be deposited using a CVD process, and the material of the passivation layer 209 may include SiO2, siON, siNx, and the like. Patterning of passivation layer 209 may be accomplished by a photolithography process and an etching process. The metal layer 30 is connected to the source and drain electrodes 208 through vias (not shown) penetrating the passivation layer 209.

The method further comprises, after the step of forming the anode layer 40 on the side of the metal layer 30 facing away from the substrate 20 and forming the auxiliary electrode layer 50 on the side of the partition structure 301 facing away from the substrate 20:

sequentially forming a light emitting layer and a cathode layer on one side of the anode layer 40 and the auxiliary electrode layer 50 facing away from the substrate;

wherein the cathode layer is metal-connected with the auxiliary electrode 50.

Specifically, the light emitting layer may include a hole injection layer, a hole transport layer, a light emitting material layer, and an electron transport layer, which are sequentially stacked from bottom to top, wherein the hole injection layer is disposed close to the substrate 20.

The hole injection layer may be a material that facilitates control of hole injection speed, such as CuPc or the like; the hole transport layer may be a material having high thermal stability, facilitating hole transport, such as NPB (N, N ' - (1-naphthyl) -N, N ' -diphenyl-4, 4' -biphenyldiamine), or the like; the light emitting material layer may be a material having high light emitting efficiency, such as Alq 3; the electron transport layer may be a material having high thermal stability, facilitating electron transport, such as PBD (2- (4-biphenyl) -5- (4-t-butyl) phenyl-1, 3, 4-oxadiazole) and the like.

Under external driving, electrons pass through the electron transport layer from the cathode layer to the light emitting material layer, holes pass through the hole injection layer and the hole transport layer from the anode layer 40 to the light emitting material layer, electrons and holes interact at the light emitting material layer to emit light, and light enters the cathode layer through the electron transport layer and exits from the light emitting region of the cathode layer.

In addition, a pixel defining layer may be further included between the light emitting layer and the anode layer 40, and the pixel defining layer may define a plurality of light emitting regions and non-light emitting regions on the substrate 20, wherein the position of the anode corresponds to the position of the light emitting region, and the position of the auxiliary electrode corresponds to the position of the non-light emitting region, thereby avoiding the auxiliary electrode from affecting the light emitting effect of the product.

Based on the same inventive concept, the embodiment of the application also discloses a display device, which comprises a display panel, wherein the display panel is prepared by the preparation method of the display panel.

Specifically, the display device may be a computer display, a television, a billboard, a laser printer with display function, a telephone, a cell phone, a personal digital assistant (Personal Digital Assistant, PDA), a laptop computer, a digital camera, a camcorder, a viewfinder, a vehicle, a large-area wall, a screen of a theater, a stadium sign, or the like.

It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.

It should also be noted that, in this document, the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, but do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Moreover, relational terms such as "first" and "second" may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions, or order, and without necessarily being construed as indicating or implying any relative importance. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or terminal device comprising the element.

The foregoing has outlined rather broadly the more detailed description of the present application, and the detailed description of the principles and embodiments herein may be better understood as being a limitation on the present application. Also, various modifications in the details and application scope may be made by those skilled in the art in light of this disclosure, and all such modifications and variations are not required to be exhaustive or are intended to be within the scope of the disclosure.

Claims (15)

1. A method for manufacturing a display panel, the method comprising:

providing a substrate;

forming a metal layer on one side of the substrate, wherein the metal layer comprises at least one partition structure, the partition structure comprises a flat area and a plurality of raised areas surrounding the flat area, and the distance from one side of the raised areas, which faces away from the substrate, to the substrate is larger than the distance from one side of the flat area, which faces away from the substrate, to the substrate;

and forming an anode layer on one side of the metal layer, which is away from the substrate, and forming an auxiliary electrode layer on one side of the partition structure, which is away from the substrate, wherein the orthographic projection of the anode layer on the substrate and the orthographic projection of the auxiliary electrode layer on the substrate are not overlapped.

2. The method for manufacturing a display panel according to claim 1, wherein:

the partition structure comprises a first side wall and a second side wall in the raised area, wherein one side of the first side wall is connected with the flat area, the other side of the first side wall is connected with the second side wall, and the distance from one side of the second side wall, which is away from the substrate, to the substrate is greater than the distance from one side of the flat area, which is away from the substrate, to the substrate.

3. The method of manufacturing a display panel according to claim 1, wherein before the step of forming a metal layer on one side of the substrate base plate, the method further comprises:

a flat layer is formed on one side of the substrate base plate, the flat layer comprises a plurality of protruding structures, and the positions of the protruding structures correspond to the positions of protruding areas of the partition structures.

4. The method of manufacturing a display panel according to claim 3, wherein after the step of forming a metal layer on one side of the substrate base plate, the method further comprises:

and etching the convex structure of the flat layer through an etching process.

5. The method for manufacturing a display panel according to claim 1, wherein:

the anode and the auxiliary electrode are arranged on the same layer.

6. The method for manufacturing a display panel according to claim 1, wherein:

the metal layer comprises a plurality of partition structures, and an auxiliary electrode layer is formed on one side, away from the substrate, of each partition structure.

7. The method for manufacturing a display panel according to claim 1, wherein:

the anode layer has a thickness of 200nm or more and 1000nm or less.

8. The method for manufacturing a display panel according to claim 1, wherein:

the auxiliary electrode layer has a thickness of 200nm or more and 1000nm or less.

9. The method for manufacturing a display panel according to claim 1, wherein:

the metal layer has a thickness of greater than or equal to 1000 angstroms and less than or equal to 1400 angstroms.

10. The method for manufacturing a display panel according to claim 1, wherein:

the material of the metal layer comprises: al, mo and ITO.

11. The method for manufacturing a display panel according to claim 1, wherein:

the thickness of the flat layer is 2000nm or more and 3500nm or less.

12. The method of any one of claims 1 to 11, wherein after the step of forming an anode layer on a side of the metal layer facing away from the substrate and forming an auxiliary electrode layer on a side of the partition structure facing away from the substrate, the method further comprises:

sequentially forming a light-emitting layer and a cathode layer on one side of the anode layer and the auxiliary electrode layer, which is away from the substrate;

wherein the cathode layer is in metal connection with the auxiliary electrode.

13. The method for manufacturing a display panel according to any one of claims 1 to 11, wherein:

the substrate includes a thin film transistor substrate.

14. The method of manufacturing a display panel according to claim 3, wherein before the step of forming the flat layer on the one side of the substrate base plate, the method further comprises:

a passivation layer is formed on one side of the substrate base plate.

15. A display device comprising a display panel prepared by the method of preparing a display panel according to any one of claims 1-14.

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