CN116182919A - Triaxial high-temperature vibration sensor based on optical fiber F-P cavity and preparation method thereof - Google Patents
Triaxial high-temperature vibration sensor based on optical fiber F-P cavity and preparation method thereof Download PDFInfo
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- 239000013307 optical fiber Substances 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title abstract description 6
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- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- G01D5/353—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre
- G01D5/35306—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement
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Abstract
The utility model discloses a triaxial high-temperature vibration sensor based on an optical fiber F-P cavity and a preparation method thereof, and belongs to the technical field of micro-electromechanical systems. The triaxial high-temperature vibration sensor based on the optical fiber F-P cavity comprises top silicon and base silicon, a triaxial vibration sensitive structure is arranged between the top silicon and the base silicon, three clamped beam-mass block systems are integrated on an outer shell to form the triaxial vibration sensitive structure, each clamped beam-mass block system is centrally symmetrical, an x-axis measuring optical fiber and a y-axis measuring optical fiber are correspondingly arranged on the front side and the left side of the triaxial vibration sensitive structure respectively, and a z-axis measuring optical fiber is arranged on the base silicon and used for transmitting vibration to be measured; a measuring vibration F-P cavity is enclosed between each mass block and the side wall of the outer shell; the sensor can measure three axial vibration signals at the same time, and the top silicon, the base silicon and the outer shell adopt three layers of silicon wafers to be directly bonded at high temperature, so that the sensor can work at the environment temperature of 800 ℃.
Description
Technical Field
The utility model relates to the technical field of micro-electromechanical systems, in particular to a triaxial high-temperature vibration sensor based on an optical fiber F-P cavity and a preparation method thereof.
Background
High temperature vibration sensors based on microelectromechanical systems (MEMS) technology play an extremely important role in the measurement of vibration signals of aircraft engines. Because the vibration of the aeroengine is multiaxial coupling vibration, the sensor is required to measure three axial vibration signals simultaneously and can work normally in the high-temperature environment of the aeroengine.
Currently, research on MEMS high temperature vibration sensors mainly includes piezoelectric type, piezoresistive type and optical fiber type, and mainly aims at measurement of single axial vibration. The utility model patent with publication number of CN215524821U proposes a novel high-temperature triaxial piezoelectric vibration sensor, which adopts a piezoelectric principle, has the problem of piezoelectric performance degradation in a high-temperature environment, influences the actual measurement precision of the sensor in the high-temperature environment, and has the practical upper limit of using temperature of 500 ℃; the patent application document of the utility model with the publication number of CN113624328A proposes a miniature high-temperature-resistant optical fiber Fabry-Perot vibration sensor, which can work in a high-temperature environment of 700 ℃ and has strong anti-interference performance, but can only measure a single axial vibration signal. The prior art still can not satisfy the high temperature resistant that need to the internal vibration measurement of aeroengine and triaxial measuring far away.
Disclosure of Invention
Aiming at the problems, the utility model aims to provide a triaxial high-temperature vibration sensor based on an optical fiber F-P cavity and a preparation method thereof, which can meet the requirements of high-temperature resistance and triaxial measurement required by the measurement of the internal vibration of an aero-engine.
In order to achieve the above purpose, the technical scheme adopted by the utility model is as follows:
triaxial high temperature vibration sensor based on optic fibre F-P chamber, its characterized in that: the three-axis vibration sensing structure is arranged between the top silicon and the substrate silicon, an x-axis measuring optical fiber and a y-axis measuring optical fiber are respectively and correspondingly arranged on the front side and the left side of the three-axis vibration sensing structure, and a z-axis measuring optical fiber is arranged on the substrate silicon.
Further, the triaxial vibration sensing structure comprises an outer shell, two partition boards are arranged in the outer shell, the outer shell is divided into three chambers by the two partition boards, a first mass block, a second mass block and a third mass block are sequentially and correspondingly arranged in the three chambers from left to back, and a first clamped beam is arranged between the front side and the rear side of the first mass block and the outer shell; the second clamped beams are arranged between the front side and the rear side of the second mass block and the outer shell, and between the left side and the right side of the second mass block and the two clapboards, and the third clamped beams are arranged between the left side and the right side of the third mass block and the corresponding clapboards and the outer shell.
Further, the x-axis measurement optical fiber is positioned on the front side wall of the outer shell, and the center of the x-axis measurement optical fiber and the center of the third mass block are positioned on the same horizontal line; the y-axis measuring optical fiber is positioned on the left side wall of the outer shell, and the center of the y-axis measuring optical fiber and the center of the first mass block are positioned on the same horizontal line; the center of the z-axis measurement optical fiber and the center of the second mass block are positioned on the same vertical line.
Further, a cavity enclosed by the third mass block, the outer shell and the adjacent partition plates forms an x-axis measurement vibration F-P cavity; a cavity enclosed by the first mass block, the outer shell and the adjacent partition plates forms a y-axis measurement vibration F-P cavity; and a cavity enclosed by the second mass block, the outer shell and the two partition plates forms a z-axis measurement vibration F-P cavity.
Further, the thickness of the outer shell is 1000 μm, and the thicknesses of the top silicon and the base silicon are 500 μm.
Further, the diameter of the x-axis measuring fiber and the y-axis measuring fiber is 600 μm, and the diameter of the z-axis measuring fiber is 1.8mm.
Further, the preparation method of the triaxial high-temperature vibration sensor based on the optical fiber F-P cavity is characterized by comprising the following steps,
s1: preprocessing top silicon, substrate silicon and a silicon wafer for preparing a triaxial vibration sensitive structure;
s2: etching a silicon wafer for preparing the triaxial vibration sensitive structure by adopting an inductive coupling plasma etching technology to prepare the triaxial vibration sensitive structure;
s3: etching the substrate silicon by adopting an inductive coupling plasma etching technology to form a through hole structure;
s4: vacuumizing the etched triaxial vibration sensitive structure, top silicon and substrate silicon in a bonding machine to bond at high temperature;
s5: and (3) forming a through hole structure by using femto-second laser to ablate the front side wall and the left side wall of the triaxial vibration sensitive structure, and correspondingly bonding an x-axis measuring optical fiber, a y-axis measuring optical fiber and a z-axis measuring optical fiber at the through hole structures on the front side wall and the left side wall of the triaxial vibration sensitive structure.
The beneficial effects of the utility model are as follows: compared with the prior art, the utility model has the advantages that,
1. the triaxial high-temperature vibration sensor based on the optical fiber F-P cavity integrates three clamped beam-mass block systems on an outer shell (a chip) to form a triaxial vibration sensitive structure, and each clamped beam-mass block system is centrosymmetric, and three vibration signals in different axial directions at the same point can be measured simultaneously by inserting measuring optical fibers in different axial directions.
2. The triaxial high-temperature vibration sensor based on the optical fiber F-P cavity provided by the utility model integrates the triaxial vibration sensor on one chip, reduces the packaging volume of the sensor, improves the overall structural strength, and has small influence on the original state of a measured object by the integrated triaxial vibration sensor after packaging.
3. The triaxial high-temperature vibration sensor based on the optical fiber F-P cavity provided by the utility model adopts three layers of silicon wafers to be directly bonded at high temperature, so that the problem of thermal adaptation caused by the difference of thermal expansion coefficients of different materials at high temperature is avoided, the advantages of excellent mechanical property, high stability and the like of the silicon material in a high-temperature environment are utilized, and the sensor can work at the environment temperature of 800 ℃.
Drawings
Fig. 1 is a top view of a three-axis high temperature vibration sensor according to the present utility model.
Fig. 2 is a front view of the structure of the triaxial dither sensor according to the present utility model.
Fig. 3 is a schematic diagram of step S201 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 4 is a schematic diagram of step S202 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 5 is a schematic diagram of step S203 in the process of manufacturing the triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 6 is a schematic diagram of step S204 in the process of manufacturing the triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 7 is a schematic diagram of step S205 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 8 is a schematic diagram of step S206 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 9 is a schematic diagram of step S207 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 10 is a schematic diagram of step S208 in the process of manufacturing the triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 11 is a schematic diagram of step S209 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 12 is a schematic diagram of step S210 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 13 is a schematic diagram of step S301 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 14 is a schematic diagram of step S302 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 15 is a schematic diagram of step S4 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Fig. 16 is a schematic diagram of step S5 in the process of manufacturing a triaxial high-temperature vibration sensor according to the second embodiment of the present utility model.
Wherein: 1-top silicon, 2-base silicon, 3-x axis measuring optical fiber, 4-y axis measuring optical fiber, 5-z axis measuring optical fiber, 6-outer shell, 7-baffle, 8-first mass block, 9-second mass block, 10-third mass block, 11-first clamped beam, 12-second clamped beam, 13-third clamped beam, 14-x axis measuring vibration F-P cavity, 15-y axis measuring vibration F-P cavity, 16-z axis measuring vibration F-P cavity.
Detailed Description
In order to enable those skilled in the art to better understand the technical solution of the present utility model, the technical solution of the present utility model is further described below with reference to the accompanying drawings and examples.
Example 1
The triaxial high-temperature vibration sensor based on the optical fiber F-P cavity shown in the accompanying drawings 1-2 comprises top silicon 1 and base silicon 2, a triaxial vibration sensing structure is arranged between the top silicon 1 and the base silicon 2, an x-axis measuring optical fiber 3 and a y-axis measuring optical fiber 4 are correspondingly arranged on the front side and the left side of the triaxial vibration sensing structure respectively, and a z-axis measuring optical fiber 5 is arranged on the base silicon 2; the top silicon 1, the base silicon 2 and the triaxial vibration sensitive structure are all made of silicon wafer materials, the top silicon 1 and the base silicon 2 are directly bonded at two sides of the triaxial vibration sensitive structure by adopting silicon high temperature, bonding conditions comprise a bottom plate temperature of 360 ℃ and a bonding chamber vacuum degree of 1.0 multiplied by 10 - 4 Pa, head pressure 25000N, bonding time 2h45min.
Specifically, the triaxial vibration sensing structure includes an outer casing 6, the outer casing 6 is a silicon wafer structure, two partition plates 7 are disposed in the outer casing 6, the two partition plates 7 divide the outer casing into three chambers (a structure with three chambers of the two partition plates 7 is formed by dry etching the outer casing 6 by adopting an inductively coupled plasma etching technology), a first mass block 8, a second mass block 9 and a third mass block 10 are sequentially and correspondingly disposed in the three chambers from left to right, and the centers of the first mass block 8, the second mass block 9 and the third mass block 10 are all coincident with the centers of the corresponding chambers; a first clamped beam 11 is arranged between the front side and the rear side of the first mass block 8 and the outer shell 6, and the first mass block 8 is fixedly connected with the front side wall and the rear side wall of the outer shell 6 through the first clamped beam 11; second clamped beams 12 are respectively arranged between the front side and the rear side of the second mass block 9 and the outer shell 6, and between the left side and the right side of the second mass block 9 and the two clapboards 7, and the second mass block 9 is fixedly connected with the front side wall, the rear side wall and the two clapboards 7 of the outer shell 6 through the second clamped beams 12; and third clamped beams 13 are respectively arranged between the left side and the right side of the third mass block 10 and the corresponding partition plates 7 and the outer shell 6, and the third mass block 10 is fixedly connected with the right side wall of the outer shell 6 and the adjacent partition plates 7 through the third clamped beams 13.
The x-axis measurement optical fiber 3 is located on the front side wall of the outer shell 6, a through hole is formed in the front side wall of the outer shell 6, the x-axis measurement optical fiber 3 is adhered and fixed on the outer shell 6 through the through hole in the front side wall of the outer shell 6, the x-axis measurement optical fiber 3 is vertically arranged with the front side wall of the outer shell 6, and the center of the x-axis measurement optical fiber 3 and the center of the third mass block 10 are located on the same horizontal line; the y-axis measurement optical fiber 4 is positioned on the left side wall of the outer shell 6, a through hole is formed in the left side wall of the outer shell 6, the y-axis measurement optical fiber 4 is adhered and fixed on the outer shell 6 through the through hole on the left side wall of the outer shell 6, the y-axis measurement optical fiber 4 is vertically arranged with the left side wall of the outer shell 6, and the center of the y-axis measurement optical fiber 4 and the center of the first mass block 8 are positioned on the same horizontal line; the substrate silicon 2 is provided with a through hole, the z-axis measuring optical fiber 5 is fixedly bonded with the substrate silicon 2 through the through hole on the substrate silicon 2, and the center of the z-axis measuring optical fiber 5 and the center of the second mass block 9 are positioned on the same vertical line; the extension lines of the x-axis measuring optical fiber 3, the y-axis measuring optical fiber 4 and the z-axis measuring optical fiber 5 are mutually perpendicular.
Further, a cavity enclosed between the third mass block 10 and the outer shell 6 and the adjacent partition plate 7 forms an x-axis measurement vibration F-P cavity 14 for measuring the measured vibration in the x-axis direction; the first mass block 8, the outer shell 6 and the adjacent partition plates 7 form a cavity 15 for measuring vibration F-P along the y axis, and the cavity is used for measuring vibration to be measured along the y axis; the second mass block 9, the outer shell 6 and the two partition plates 7 form a cavity 16 for measuring the vibration F-P of the z axis, and the cavity is used for measuring the vibration to be measured of the z axis; the x-axis measuring optical fiber 3, the y-axis measuring optical fiber 4 and the z-axis measuring optical fiber 5 are matched with the corresponding measuring vibration F-P cavity, so that the spectral change caused by the measured vibration change, namely the change of the cavity length value of the measuring vibration F-P cavity, can be measured.
Preferably, the thickness of the outer shell 6 is 1000 μm, and the thickness of the top silicon 1 and the base silicon 2 is 500 μm.
Preferably, the diameter of the x-axis measuring fiber 3 and the y-axis measuring fiber 4 is 600 μm, and the diameter of the z-axis measuring fiber 5 is 1.8mm.
The working principle of the triaxial high-temperature vibration sensor in the embodiment is as follows: the light emitted by the light source is processed optically to form parallel light, and then is split into three beams of light through the beam splitter, the three beams of light are respectively incident on the corresponding mass blocks through the x-axis measuring optical fiber 3, the y-axis measuring optical fiber 4 and the z-axis measuring optical fiber 5, reflected on the end face of the measuring optical fiber and the surface of the corresponding mass block, and the two reflected beams of coherent light interfere and are transmitted to the light path demodulation system through the optical fiber circulator.
When the outside vibrates and the vibration in the x-axis direction is measured, the vibration sensitive structure of the clamped beam and the mass block formed by the third clamped beam 13 and the third mass block 10 vibrates, so that the cavity length value of the x-axis measurement vibration F-P cavity 14 for measuring vibration changes, the optical path difference of two beams of light reflected back on the upper end surface of the x-axis measurement optical fiber 3 and the lower surface of the third mass block 10 changes, the cavity length value change quantity of the x-axis measurement vibration F-P cavity 14 is obtained by demodulating the change of the optical path difference, and the acceleration of the outside vibration is obtained by theoretical calculation, so that the measurement of an outside vibration signal is realized; the principle is the same when measuring the vibrations in the other two axial directions.
Example 2
Embodiment II provides a method for preparing the triaxial high-temperature vibration sensor based on the optical fiber F-P cavity in embodiment I, which comprises the following steps,
s1: preprocessing top silicon 1, base silicon 2 and a silicon wafer for preparing a triaxial vibration-sensitive structure;
specifically, three unprocessed double polished silicon wafers are selected, wherein one of the silicon wafers has a thickness of 1000 μm and is used as an outer shell 6 for etching; the other two pieces, 500 μm thick, were used as top silicon 1 and base silicon 2, respectively, and all three were 4 inches in diameter (the unprocessed double polished silicon wafer was circular, and after processing, was rectangular as described in example one) and were subjected to standard cleaning.
Further, S2: etching a silicon wafer for preparing the triaxial vibration sensitive structure by adopting an inductive coupling plasma etching technology to prepare the triaxial vibration sensitive structure;
in particular, the method comprises the steps of,
s201: spin coating photoresist on the surface (front surface) of a double-polished silicon wafer with the thickness of 1000 μm, and performing photoetching development to form a first clamped beam 11, a second clamped beam 12, a third clamped beam 13, a first mass block 8, a second mass block 9 and a third mass block 10, wherein a movable gap etching window is formed above the first clamped beam, the second clamped beam and the third clamped beam, as shown in figure 3;
s202: etching the silicon wafer 10 mu m by using the photoresist as an etching mask and adopting an inductive coupling plasma etching technology to form a first clamped beam 11, a second clamped beam 12, a third clamped beam 13, a movable gap above the first mass block 8, the second mass block 9 and the third mass block 10, and removing the photoresist by a wet method, wherein the wet method is shown in figure 4;
s203: spin coating photoresist on the other surface (back surface) of the double-polished silicon wafer, photoetching and developing to form a first clamped beam 11, a second clamped beam 12, a third clamped beam 13, a first mass block 8, a second mass block 9 and a movable gap etching window below a third mass block 10, wherein a back surface alignment mark is adopted to be strictly aligned with the front surface etching window in the operation process, as shown in figure 5;
s204: etching the silicon wafer 10 mu m by using the photoresist as an etching mask and adopting an inductive coupling plasma etching technology to form a first clamped beam 11, a second clamped beam 12, a third clamped beam 13, a first mass block 8, a second mass block 9 and a movable gap below the third mass block 10, and synchronously forming a z-axis measurement vibration F-P cavity 16, wherein the photoresist is removed by a wet method, as shown in figure 6;
s205: spin-coating photoresist on the front surface of the double-polished silicon wafer, and performing photoetching development to form etching windows of a first clamped beam 11, a second clamped beam 12 and a third clamped beam 13, as shown in figure 7;
s206: etching 980 μm silicon wafer by using photoresist as etching mask and adopting inductively coupled plasma etching technique to form a first clamped beam 11, a second clamped beam 12 and a third clamped beam 13, and removing the photoresist by wet method, as shown in figure 8;
s207: spin coating photoresist on the front surface of the double-polished silicon wafer, and performing photoetching development to form etching windows on the upper half parts of the first mass block 8, the second mass block 9 and the third mass block 10, as shown in figure 9;
s208: etching the silicon wafer 460 mu m by using the photoresist as an etching mask and adopting an inductive coupling plasma etching technology to form upper half parts of the first mass block 8, the second mass block 9 and the third mass block 10, and removing the photoresist by a wet method, wherein the figure 10 shows;
s209: spin coating photoresist on the back of the double-polished silicon wafer, and performing photoetching development to form etching windows on the lower half parts of the first mass block 8, the second mass block 9 and the third mass block 10, as shown in figure 11;
s210: the photoresist is used as an etching mask, an inductive coupling plasma etching technology is adopted to etch the silicon wafer 460 mu m, the lower half parts of the first mass block 8, the second mass block 9 and the third mass block 10 are formed, the partition 7, the x-axis measuring vibration F-P cavity 14 and the y-axis measuring vibration F-P cavity 15 are synchronously formed, the photoresist is removed by a wet method, and the outer shell 6 of the triaxial vibration sensitive structure is formed, as shown in figure 12.
Further, S3: etching the substrate silicon 2 by adopting an inductive coupling plasma etching technology to form a through hole structure;
specifically, S301: spin coating photoresist on the surface of a double polished silicon wafer with the thickness of 500 μm, and carrying out photoetching development to form a through hole etching window, as shown in figure 13;
s302: and (4) taking the photoresist as an etching mask, and etching by adopting an inductively coupled plasma etching technology until the photoresist is perforated to form the substrate silicon 2 with the through hole structure with the diameter of 1.8mm, as shown in figure 14.
Further, S4: vacuumizing the etched triaxial vibration sensitive structure, the top silicon 1 and the substrate silicon 2 in a bonding machine to bond at high temperature;
specifically, the etched double polished silicon wafer surface is treated, and simultaneously, the etched double polished silicon wafer surface is vacuumized in a bonding machine to bond with a substrate silicon 2 and a top silicon 1 at high temperature, the substrate silicon 2 with a 500 mu m through hole structure is bonded on the back surface of a silicon wafer with an etching vibration sensitive structure, and a 500 mu m unetched silicon wafer is bonded on the front surface of the silicon wafer, as shown in fig. 15, bonding parameters are as follows: the temperature of the bottom plate is 360 ℃, the vacuum degree of the bonding chamber is 1.0x10 < -4 > Pa, the pressure of the pressure head is 25000N, and the bonding time is 2h45min. And then carrying out high-temperature heat treatment on the bonded wafer to eliminate internal stress, wherein the heat treatment temperature is 1000 ℃ and the time is 60min, and scribing according to scribing marks.
S5: the front side wall and the left side wall of the triaxial vibration sensitive structure are ablated by femto-second laser to form a through hole structure with the diameter of 600 mu m, and an x-axis measuring optical fiber 3, a y-axis measuring optical fiber 4 and a z-axis measuring optical fiber 5 are correspondingly bonded at the through hole structures on the front side wall and the left side wall of the triaxial vibration sensitive structure, as shown in figure 16.
The foregoing has shown and described the basic principles, principal features and advantages of the utility model. It will be understood by those skilled in the art that the present utility model is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present utility model, and various changes and modifications may be made without departing from the spirit and scope of the utility model, which is defined in the appended claims. The scope of the utility model is defined by the appended claims and equivalents thereof.
Claims (7)
1. Triaxial high temperature vibration sensor based on optic fibre F-P chamber, its characterized in that: the three-axis vibration sensing structure is arranged between the top silicon (1) and the substrate silicon (2), an x-axis measuring optical fiber (3) and a y-axis measuring optical fiber (4) are correspondingly arranged on the front side and the left side of the three-axis vibration sensing structure respectively, and a z-axis measuring optical fiber (5) is arranged on the substrate silicon (2).
2. The fiber optic F-P cavity based triaxial high temperature vibration sensor according to claim 1, characterized in that: the triaxial vibration sensing structure comprises an outer shell (6), wherein two partition plates (7) are arranged in the outer shell (6), the outer shell is divided into three chambers by the two partition plates (7), a first mass block (8), a second mass block (9) and a third mass block (10) are sequentially and correspondingly arranged in the three chambers from left to right, and a first clamped beam (11) is arranged between the front side and the rear side of the first mass block (8) and the outer shell (6); the second clamped beams (12) are arranged between the front side and the rear side of the second mass block (9) and the outer shell (6) and between the left side and the right side of the second mass block (9) and the two partition boards (7), and the third clamped beams (13) are arranged between the left side and the right side of the third mass block (10) and the partition boards (7) and the outer shell (6) which correspond to each other.
3. The fiber optic F-P cavity based triaxial high temperature vibration sensor according to claim 2, characterized in that: the x-axis measuring optical fiber (3) is positioned on the front side wall of the outer shell (6), and the center of the x-axis measuring optical fiber (3) and the center of the third mass block (10) are positioned on the same horizontal line; the y-axis measuring optical fiber (4) is positioned on the left side wall of the outer shell (6), and the center of the y-axis measuring optical fiber (4) and the center of the first mass block (8) are positioned on the same horizontal line; the center of the z-axis measuring optical fiber (5) and the center of the second mass block (9) are positioned on the same vertical line.
4. A triaxial high temperature vibration sensor based on an optical fiber F-P cavity according to claim 3, characterized in that: the third mass block (10) forms an x-axis measuring vibration F-P cavity (14) with a cavity formed by surrounding between the outer shell (6) and the adjacent partition plate (7); the first mass block (8) and a cavity formed by the outer shell (6) and the adjacent partition plates (7) form a y-axis measurement vibration F-P cavity (15); the second mass block (9) and a cavity enclosed between the outer shell (6) and the two partition plates (7) form a z-axis measuring vibration F-P cavity (16).
5. The fiber optic F-P cavity based triaxial high temperature vibration sensor according to claim 1, characterized in that: the thickness of the outer shell (6) is 1000 μm, and the thickness of the top silicon (1) and the base silicon (2) are 500 μm.
6. The fiber optic F-P cavity based triaxial high temperature vibration sensor according to claim 1, characterized in that: the diameter of the x-axis measuring optical fiber (3) and the y-axis measuring optical fiber (4) is 600 mu m, and the diameter of the z-axis measuring optical fiber (5) is 1.8mm.
7. The method for manufacturing a triaxial high temperature vibration sensor based on an optical fiber F-P cavity according to any one of claim 1 to 6, comprising the steps of,
s1: pre-treating top silicon (1), base silicon (2) and a silicon wafer for preparing a triaxial vibration-sensitive structure;
s2: etching a silicon wafer for preparing the triaxial vibration sensitive structure by adopting an inductive coupling plasma etching technology to prepare the triaxial vibration sensitive structure;
s3: etching the substrate silicon (2) by adopting an inductive coupling plasma etching technology to form a through hole structure;
s4: vacuumizing the etched triaxial vibration sensitive structure, the top silicon (1) and the substrate silicon (2) in a bonding machine to bond at a high temperature;
s5: and the front side wall and the left side wall of the triaxial vibration sensitive structure are ablated by femtosecond laser to form a through hole structure, and an x-axis measuring optical fiber (3), a y-axis measuring optical fiber (4) and a z-axis measuring optical fiber (5) are correspondingly bonded at the through hole structures on the front side wall and the left side wall of the triaxial vibration sensitive structure and the substrate silicon (2).
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