CN116180229B - Apparatus and method for growing silicon single crystal by zone-melting continuous charging - Google Patents
Apparatus and method for growing silicon single crystal by zone-melting continuous charging Download PDFInfo
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- CN116180229B CN116180229B CN202310493254.0A CN202310493254A CN116180229B CN 116180229 B CN116180229 B CN 116180229B CN 202310493254 A CN202310493254 A CN 202310493254A CN 116180229 B CN116180229 B CN 116180229B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of preparation of silicon single crystals, and discloses a device and a method for growing silicon single crystals by zone-melting continuous feeding, wherein the device comprises a furnace body, an electromagnetic constraint heater arranged in a lower furnace chamber, a vacuumizing device and a protective gas flow control device which are arranged on the furnace body, a silicon single crystal ingot supporting crystal pulling module arranged in the lower furnace chamber, an isolating valve arranged between an upper furnace chamber and a lower furnace chamber, and the device also comprises: the device comprises a feeding module, a residual material feeding module and a welding coil; the feeding module is used for clamping the new polycrystalline silicon rod material and continuously feeding, and automatically holding the residual polycrystalline silicon rod material when the clamped new polycrystalline silicon rod material is consumed to a preset length and is clamped by the residual material feeding module for continuous feeding, and returning the residual polycrystalline silicon rod material to the upper furnace chamber. The device and the method provided by the invention can realize continuous feeding and growth of the silicon single crystal ingot by the device, enlarge single weight of a single silicon single crystal ingot, improve production efficiency and silicon slice utilization rate, and become a technical means for efficiently preparing zone-melting silicon single crystals.
Description
Technical Field
The invention relates to the technical field of silicon single crystal preparation, in particular to a device and a method for growing silicon single crystals by zone-melting continuous feeding.
Background
The prior art silicon single crystal production methods are basically the Czochralski method and the zone-melting method. The method for preparing the silicon single crystal ingot by using the zone melting method has the advantages of small impurity pollution, high crystal purity and good consistency of longitudinal quality parameters of the silicon single crystal ingot in the crystal pulling process. However, in the existing zone-melting method silicon single crystal preparation technology, only one polycrystalline silicon bar is used for preparing one silicon single crystal ingot, so that the single weight of a single silicon single crystal ingot is limited, the production efficiency is limited, and the single crystal ingot preparation technology becomes one of reasons for higher cost of zone-melting single crystals.
CN110195256a discloses a device and process for continuous growth of single crystal silicon by multiple feeding, the device limits the polysilicon melted in the region into a funnel-shaped quartz crucible and its outlet neck and the melting zone at the top end of the single crystal silicon rod by means of electromagnetic restraint force generated by the first high frequency heating coil and the second high frequency heating coil, surface tension of liquid silicon and supporting force of crystalline single crystal; by means of a buffer of stored molten silicon in a funnel-shaped quartz crucible, the continuous growth of monocrystalline silicon is not interrupted during the intermittent period of adding new polycrystalline silicon material. The funnel-shaped quartz crucible is provided as a replacement buffer, so that repeated feeding and uninterrupted crystal pulling can be realized; the monocrystalline silicon pulled by the invention has the advantages of zone-melting monocrystalline and Czochralski.
However, this invention has the following problems to be improved:
1. although the patent application does not use a conventional large quartz crucible any more compared with the existing technique for producing a silicon single crystal by the Czochralski method, a smaller funnel-shaped quartz crucible is still required, and the problem of contamination of oxygen impurities in the crucible is caused by the quartz crucible, and the quality of the silicon crystal is still different from that of the zone melting technique. Thus, this patent application does not retain all of the advantages of zone-melt pulling silicon single crystals;
2. this patent application has two factors that raise the level of molten silicon. Firstly, because the first high-frequency heating coil and the second high-frequency heating coil are coaxially arranged and are easy to interfere with each other, the interference is controlled by increasing the distance between the first high-frequency heating coil and the second high-frequency heating coil or increasing the shielding method, and as a result, the distance between the two coils is necessarily increased, and the increase of the distance tends to raise the liquid level of the molten silicon; second, because of the existence of the funnel-shaped quartz crucible of this patent application, the level of molten silicon is also raised.
The elevation of the molten silicon level brings about two disadvantages. Firstly, the electromagnetic pressure requirement on the first high-frequency heating coil is greatly improved; second, in order to relieve this pressure, the level of molten silicon in the crucible must not be too high, so that it is necessary to reduce or even halt the growth of silicon crystals during the reloading to maintain the necessary amount of molten silicon. In conclusion, the energy consumption of the process is increased, and the instability is brought to the growth process.
The present invention has been made in order to solve the above-mentioned problems 1 and 2.
Disclosure of Invention
The invention aims to provide a device and a method for growing silicon single crystals by zone-melting continuous feeding.
In order to solve the technical problems that the prior art can not realize continuous feeding of zone-melting silicon single crystal pulling, and simultaneously avoid oxygen impurity pollution of a quartz crucible and keep silicon melting stable during material changing, the invention is realized in the following steps:
in a first aspect, the present invention provides an apparatus for growing silicon single crystal by zone-melting continuous feed, comprising a furnace body having an upper furnace chamber and a lower furnace chamber, an electromagnetic confinement heater disposed in the lower furnace chamber, a vacuum pumping device and a shielding gas flow control device disposed on the furnace body (upper furnace chamber and lower furnace chamber), a silicon single crystal ingot supporting crystal pulling module disposed in the lower furnace chamber, and an isolation valve disposed between the upper furnace chamber and the lower furnace chamber, further comprising: the feeding module, the surplus material feeding module and the welding coil.
According to the invention, by arranging the residual material feeding module and the welding coil and matching with the feeding module, continuous feeding of the zone-melting silicon single crystal pulling can be realized, the growth of the silicon single crystal below is not affected during continuous feeding, and the melting silicon is kept stable during the material changing; and the quartz crucible is not needed, so that the oxygen impurity pollution of the quartz crucible can be avoided.
Preferably, the isolation valve is horizontally arranged between the upper furnace chamber and the lower furnace chamber and can horizontally move to isolate or communicate the upper furnace chamber and the lower furnace chamber. Any existing isolation valve that can achieve horizontal movement can be used by those skilled in the art. This preferred solution has the advantage of advantageously reducing the height of the upper oven chamber with respect to the existing way of rotating upwards to open.
The polycrystalline silicon rod can be preset with a part of a matched clamping structure so as to be matched with the residual material feeding module for clamping; of course, the clamping can also be directly performed through the residual material feeding module. Preferably, the tail cylindrical surface of the new material of the polysilicon rod is provided with a preset slot extending along the circumferential direction, and/or the tail cylindrical surface of the new material of the polysilicon rod is provided with a preset clamping groove, and the clamping grooves are symmetrically arranged, so that the reliable clamping of the polysilicon rod is facilitated. Of course, the surplus material feeding module or the feeding module can also directly clamp the polycrystalline silicon rod without arranging a slot or/and a clamping groove.
It will be appreciated that the polysilicon rod includes a new polysilicon rod material and a remainder polysilicon rod material.
More preferably, the distance between the slot and the tail end of the new polycrystalline silicon rod is 150-350 mm, which is more beneficial to realizing feeding and welding.
More preferably, the distance between the upper edge of the clamping groove and the tail end of the new polysilicon rod is more than 2mm, which is more beneficial to clamping and feeding the new polysilicon rod.
The feeding module is arranged in the upper furnace chamber and is provided with a clamping head for clamping the new polycrystalline silicon rod material and continuously feeding the new polycrystalline silicon rod material, and the residual polycrystalline silicon rod material is automatically released and returned to the upper furnace chamber when the clamped new polycrystalline silicon rod material is consumed to a preset length and is clamped by the residual material feeding module for continuous feeding.
In some preferred embodiments of the present invention, the feeding module includes at least two driving mechanisms and telescopic and slidable clamping heads with release mutual pushing surfaces, the driving mechanisms are respectively connected with the corresponding clamping heads, the clamping heads are located at the periphery of the polysilicon rod and are at least two, and can be clamped in clamping grooves of the polysilicon rod through the inner sides of the clamping heads with release mutual pushing surfaces respectively to form clamping, wherein the two release mutual pushing surfaces located at opposite sides of the polysilicon rod can drive the clamping heads to push each other through the driving mechanisms when the two opposite clamping heads are displaced along opposite directions perpendicular to the axial direction of the polysilicon rod, so as to realize release.
As an example, the two holding and pushing surfaces on opposite sides of the polysilicon rod are two inclined surfaces, and the projections of the two clamping heads on the vertical section perpendicular to the two inclined surfaces are arranged in a central symmetry manner.
Further preferably, the driving mechanism includes:
a feeding driving device;
the screw rod pairs are at least two pairs and distributed outside the outer peripheral surface of the polycrystalline silicon rod, and are respectively in one-to-one correspondence and connected with the feeding driving device;
the clamping head seat is provided with a sliding groove at one side close to the polycrystalline silicon rod to accommodate the clamping head, limits the movement of the clamping head to slide along the direction vertical to the axial direction of the polycrystalline silicon rod, corresponds to and is connected with the screw rod pair one by one and is used for lifting along with the screw rod pair;
and one end of the high-temperature spring is arranged in the sliding groove of the clamping head seat, and the other end of the high-temperature spring is arranged at one side of the clamping head far away from the polycrystalline silicon rod.
Taking the holding-releasing mutual pushing surface as two inclined surfaces as an example, when the polycrystalline silicon rod feeding device works, the clamping head clamps new polycrystalline silicon rod materials, and the feeding driving device drives the screw rod pair to drive the clamping head seat and the clamping head to continuously feed; when the new material of the clamped polysilicon rod is consumed to a preset length and is clamped by the residual material feeding module to continue feeding, at least two feeding driving devices rotate in opposite directions relatively, so that the two clamping heads move in opposite directions in a lifting manner, the high-temperature springs on the back surfaces of the inclined surfaces of the two clamping heads are pressed, the two clamping heads are mutually pushed to be separated from the clamping grooves on the new material of the polysilicon rod, the new material of the polysilicon rod is released, and the new material of the polysilicon rod is returned to the upper furnace chamber and loaded.
It can be appreciated that the feeding module is used for feeding the polysilicon rod from the upper furnace chamber into the lower furnace chamber, and providing polysilicon rod raw material for the silicon melting area; the silicon melting area is an area where a silicon melt formed by melting the polycrystalline silicon rod raw material under the action of an electromagnetic constraint heater is located; the upper furnace chamber and the lower furnace chamber are respectively provided with a vacuumizing pipeline, and the vacuumizing pipelines are connected with the vacuumizing device to vacuumize the upper furnace chamber and the lower furnace chamber; the upper furnace chamber and the lower furnace chamber are respectively provided with a protective gas flow control device and the like, which are all of the prior art and are not described herein.
The residual material feeding module is made of non-ferromagnetic materials, and is always kept away from the high-frequency heating coil in operation by more than 80mm, so that the electromagnetic field distribution of the high-frequency heating coil is prevented from being disturbed.
The residual material feeding module is arranged in the lower furnace chamber and is provided with the clamping plug, and is used for clamping the residual material of the polycrystalline silicon rod in the previous period through the clamping plug to replace the feeding module for clamping and feeding when continuous feeding is carried out, so that the feeding module can clamp the new polycrystalline silicon rod in the next period conveniently.
In some preferred embodiments of the present invention, the remainder feeding module includes:
a lifting driving device;
the upper end of the screw rod is connected with the lifting driving device;
the upper end of the guide shaft is sleeved outside the screw rod to form a screw rod pair, and the upper part of the guide shaft is provided with a non-circular outer profile cross section (preferably a spline-shaped outer profile cross section);
the rotating driving device is sleeved outside the non-circular outer contour cross section of the guide shaft and is used for limiting the rotation freedom degree between the guide shaft and the rotating driving device by means of the non-circular outer contour cross section of the guide shaft, and meanwhile, the freedom degree of lifting movement of the guide shaft is maintained;
the first end of the rotating arm is fixedly connected with the lower part of the guide shaft, and the second end of the rotating arm is close to the polycrystalline silicon rod;
the clamping plug is fixedly connected with the second end of the rotating arm and is used for driving the guide shaft by means of the lifting driving device and the rotation driving device to drive the rotating arm to control the clamping plug to rotate and insert a new material of the polycrystalline silicon rod to be clamped and fed or released.
More preferably, the remainder feeding module further comprises: and the ferrule of crystalline silicon or metallic molybdenum is sleeved outside the clamping plug and is used for preventing the new polycrystalline silicon rod material at high temperature from directly contacting with harmful metals. It should be noted that when using ferrules of crystalline silicon or metallic molybdenum, attention should be paid to the coefficient of expansion and allowable stress of the material, with elastic gaps left if necessary, to prevent the material from cracking or loosening.
When the device works, the lifting driving device and the rotating driving device are used for driving, the tangential direction of rotation of the rotating arm is perpendicular to the central axis of the polycrystalline silicon rod residual material, and the lifting movement direction of the rotating arm is parallel to the central axis of the polycrystalline silicon rod residual material, so that the lifting driving device and the rotating driving device drive the guide shaft to drive the rotating arm to control the clamping plug to rotate and insert a preset slot of the polycrystalline silicon rod new material to clamp and feed. The polycrystalline silicon rod remainder in the previous period is clamped through the clamping plug to replace the feeding module to carry out clamping feeding, so that the feeding module can conveniently clamp the new polycrystalline silicon rod remainder in the next period.
The welding coil is arranged above the electromagnetic constraint heater in the lower furnace chamber and is positioned on the outer peripheral surface of the polycrystalline silicon rod, and is used for clamping the polycrystalline silicon rod residual material by the residual material feeding module, and welding the tail part of the polycrystalline silicon rod residual material and the head part of the polycrystalline silicon rod residual material after the residual material feeding module clamps the polycrystalline silicon rod residual material and the tail part of the polycrystalline silicon rod residual material are aligned, so that the residual material feeding module can continuously feed after the residual material feeding module is released, and continuous feeding is realized.
In some preferred embodiments of the invention, the welding coil is arranged 300-800 mm above the electromagnetic restraint heater, and the welding coil are coaxially arranged, wherein the minimum inner diameter of the welding coil is 6-30 mm larger than the maximum transverse diameter of the new polycrystalline silicon rod.
Preferably, the number of turns of the welding coil is 1-5, the opening of the welding coil is in a shape of big-end-up, and the bevel angle of the side wall of the opening is 0-5 degrees.
When the butt joint part of the two sections of butt joint polycrystalline silicon rods enters a welding action area of the welding coil, the welding coil welds the butt joint surfaces of the polycrystalline silicon rods.
More preferably, the welding coil has an access power frequency of 1.5MHz to 3MHz.
The welding coil is used for welding the tail of the polycrystalline silicon rod residual material and the head of the polycrystalline silicon rod after the residual material feeding module clamps the polycrystalline silicon rod residual material and the feeding module clamps the polycrystalline silicon rod new material and the tail of the polycrystalline silicon rod residual material are aligned, so that the residual material feeding module can continuously feed materials after being released, and continuous feeding is realized.
In some more preferred embodiments of the invention, the heating apparent power P (kVA) of the welding coil and the polycrystalline silicon rod diameter D (mm) satisfy the relationship: p=a×d b Wherein a= (1.5-2.4) ×10 -2 ，b=1.7-1.8。
More preferably, under the condition that the D is more than or equal to 150mm and is more than or equal to 30mm, the minimum inner diameter of the welding coil is 15-25mm larger than the maximum transverse diameter of the new polysilicon rod, and the power supply frequency is 2-3MHz, a is (1.8-2.0) multiplied by 10 -2 And b is 1.744.
Under the preferable scheme of the preferable P, the influence of factors such as power supply frequency, coil shape, gap change between the coil and the polysilicon rod and the like on the welding effect can be considered, and the welding efficiency, stress and reliability are more favorable.
In some embodiments, the head of the new polysilicon rod material and the tail of the remaining polysilicon rod material are directly welded by melting the welding coils.
In some more preferred embodiments, the head (i.e. the lower end) of the new polysilicon rod and/or the tail (i.e. the upper end) of the remainder of the polysilicon rod are provided with a welding ring made of the same material as the polysilicon rod, and the welding ring is used for melting the welding ring through the welding coil during welding, so that compared with the mode of directly welding the solid end of the polysilicon rod, the welding process is more stable, the welding stress is small, the energy is saved, and the risk of molten silicon dripping during welding can be reduced. It should be noted that the first polysilicon rod may be provided without a weld ring, and the new polysilicon rod added later may be provided with a weld ring.
More preferably, the welding ring and the end part of the polysilicon rod where the welding ring is positioned are welded or are of an integrated structure. The corresponding processing method comprises the following steps: the welding ring is welded on the end face of the polycrystalline silicon rod in advance, and the welding method can be electromagnetic induction heating welding, ultrasonic welding and the like under protective gas, or a concave surface is directly processed on the end face of the polycrystalline silicon rod, and the convex part of the edge of the concave surface forms the welding ring with an integral structure.
More preferably, the end face of the polysilicon rod where the welding ring is located is provided with a protruding portion, and the welding ring is sleeved on the outer surface of the protruding portion. The corresponding processing method comprises the following steps: the end face of the polycrystalline silicon rod is provided with a protruding part, and the welding ring is sleeved on the protruding part before feeding.
Further preferably, a thermal expansion gap is left between the weld ring and the outer surface of the boss.
Further preferably, the thickness of the weld ring is 2mm-10mm.
In order to solve the second technical problems of large inertial mass and higher integral furnace body device of the seeding shouldering operation device in the background art, the invention adopts the following preferred scheme:
the silicon single crystal ingot supporting crystal pulling module includes:
at least 2 crystal pulling screw pairs which are arranged outside the outer peripheral surface of the silicon single crystal ingot in a dispersing way and are positioned in the lower furnace chamber, and are respectively provided with crystal pulling screws, and the axes of each crystal pulling screw and the axis of the silicon single crystal ingot are respectively parallel side by side;
the crystal pulling driving device is connected with the crystal pulling screw rod;
a seed chuck coaxially arranged with the electromagnetic confinement heater;
a susceptor positioned at the lower portion of the lower furnace chamber and driven by the crystal pulling driving device;
the seed chuck driving device is arranged on the base, is connected with the lower end of the seed chuck and is used for independently driving the seed, and is coaxially arranged with the electromagnetic constraint heater;
A silicon single crystal ingot supporting means which is distributed at the bottom of the silicon single crystal ingot to form a support from the bottom, which is disposed coaxially with the electromagnetic confinement heater, and which is mounted on the susceptor;
clamping claws which are distributed outside the outer peripheral surface of the silicon single crystal ingot to clamp the side wall of the silicon single crystal ingot, which are coaxially arranged with the electromagnetic confinement heater, and which are mounted on the base;
and the clamping driving device is connected with the clamping claw for driving and is arranged on the base.
The lifting of the silicon single crystal ingot supporting crystal pulling module is driven by at least 2 pairs (preferably 2-3 pairs) of crystal pulling screw pairs, and each crystal pulling screw pair is synchronously driven by a crystal pulling driving device; the crystal pulling screw pair is arranged in the lower furnace chamber and supported on the furnace chamber wall, and the crystal pulling driving device is positioned at the lower end of the crystal pulling screw pair and can be arranged in or outside the lower furnace chamber. The advantage that the crystal pulling screw pair is arranged in the lower furnace cavity is that the overall height of the furnace body can be reduced, and the lifting and supporting of the silicon single crystal ingot supporting crystal pulling module are stable due to the large supporting moment.
The seed chuck and the seed chuck driving device thereof are arranged at the plane center of the silicon single crystal ingot supporting crystal pulling module and are coaxially arranged with the new material of the polycrystalline silicon rod, so that the seed chuck has the lifting degree of freedom independently and optionally also has the rotating degree of freedom. The front end of the seed chuck is provided with a seed crystal for finishing fine operations such as seeding, shouldering and the like which need quick reaction; the other function of the seed chuck and the driving device thereof is to assist in fixing and supporting the silicon single crystal ingot, when the preset weight is pulled, the seed chuck driving device pulls down and locks the seed crystal, so that the shoulder of the silicon single crystal ingot is tightly attached to the silicon single crystal ingot supporting device, and the silicon single crystal ingot is supported and fixed in an auxiliary manner; when the silicon single crystal ingot grows to a preset length, the clamping claw is driven by the clamping driving device to clamp and fix the side wall of the silicon single crystal ingot.
The preferred height of the upper furnace chamber is between 1.5m and 5m, and the preferred height of the lower furnace chamber is between 1m and 6.5 m. This preferred arrangement of height takes into account the preferred new polycrystalline silicon rod size, the bulk of the silicon single crystal ingot, the capacity of subsequent processing equipment, and the height of the plant.
In a second aspect, the present invention provides a method for growing a silicon single crystal by zone-melting continuous feed, comprising feeding, seeding and shouldering, shoulder-turning, isodiametric growth and ending, which employs the apparatus of the first aspect to grow a silicon single crystal ingot.
The method of the invention comprises the following steps:
and (3) splicing:
when the new material of the first polysilicon rod is melted to a preset residual length, forming a polysilicon rod residual material, starting a residual material feeding module to clamp and feed the polysilicon rod residual material, controlling the feeding module to release the polysilicon rod residual material, and enabling the feeding module to return to an upper furnace chamber to restore to a feeding preparation state;
the method comprises the steps of controlling an isolation valve to isolate an upper furnace chamber from a lower furnace chamber, inflating the upper furnace chamber to be balanced with atmospheric pressure, opening the upper furnace chamber, loading new polycrystalline silicon rod materials on a feeding module, closing the upper furnace chamber, vacuumizing the upper furnace chamber, then recovering the atmosphere of the upper furnace chamber, opening the isolation valve, controlling the feeding module to send the new polycrystalline silicon rod materials to a butt joint surface of the tail part of polycrystalline silicon rod residual materials, and enabling the end surfaces of two polycrystalline silicon rods to be in butt joint and the butt joint surface to be in a welding action area of a welding coil;
Starting the welding coil, melting the butt joint surfaces of the two polysilicon rods, and electromagnetically restraining the molten silicon through the welding coil to prevent the molten silicon from falling down, so that the molten part is cooled, and welding is completed;
and the residual material feeding module is used for releasing the welded polycrystalline silicon rod and recovering the state of feeding by the feeding module.
The seeding, shouldering and shouldering, the equal-diameter growth and ending can be carried out according to the existing method, for example, the seeding, shouldering and shouldering processes comprise: and melting the tip of the new head of the polycrystalline silicon rod near the electromagnetic constraint heater, and independently completing seeding and shouldering under the guidance of the seed crystal driven by the seed crystal chuck driving device, and then carrying out shouldering.
The supporting and clamping process of the silicon single crystal ingot of the present invention may include: when the preset weight is pulled, the seed crystal is pulled down through the seed crystal chuck driving device, so that the shoulder part of the silicon single crystal ingot is tightly attached to the silicon single crystal ingot supporting device, and the silicon single crystal ingot is fixed and supported; when the silicon single crystal ingot grows to a preset length, the clamping claw is driven by the clamping driving device to clamp and fix the side wall of the silicon single crystal ingot.
In some embodiments, the method of making comprises:
(1) And the first polycrystalline silicon rod is conveyed into the lower furnace chamber from the upper furnace chamber through the feeding module, and the head of the first polycrystalline silicon rod is processed into a tip shape in advance, so that melting and seeding operations are facilitated. Controlling the head of the first polycrystalline silicon rod to approach the electromagnetic constraint heater, supporting the crystal pulling module through the silicon single crystal ingot, independently seeding and shouldering under the guidance of a seed chuck driving device and a seed crystal, and then carrying out shoulder turning, isomorphic growth and ending to finish growing the silicon single crystal ingot; when the first polycrystalline silicon rod is melted to a preset residual length, forming polycrystalline silicon rod residual materials, starting a residual material feeding module to clamp and feed the polycrystalline silicon rod residual materials, controlling the feeding module to release the polycrystalline silicon rod residual materials, and enabling the feeding module to return to an upper furnace chamber to restore to a feeding preparation state;
(2) The method comprises the steps of controlling an isolation valve to isolate an upper furnace chamber from a lower furnace chamber, inflating the upper furnace chamber to be balanced with atmospheric pressure, opening the upper furnace chamber, loading new polycrystalline silicon rod materials on a feeding module, closing the upper furnace chamber, vacuumizing the upper furnace chamber, then recovering the atmosphere of the upper furnace chamber, opening the isolation valve, controlling the feeding module, conveying the new polycrystalline silicon rod materials to a butt joint surface of the tail part of polycrystalline silicon rod residual materials, and enabling the end surfaces of two polycrystalline silicon rods to be in butt joint and the butt joint position to be in a welding action area of a welding coil;
(3) Starting the welding coil, melting the butt joint surfaces of the two polysilicon rods, and electromagnetically restraining the molten silicon through the welding coil to prevent the molten silicon from falling down, so that the molten part is cooled, and welding is completed;
(4) And the residual material feeding module is used for releasing the welded polycrystalline silicon rod and recovering the state of feeding by the feeding module.
The beneficial effects are that:
the device for continuously feeding and growing the silicon single crystal by zone melting provided by the invention can realize continuous feeding and growing of the silicon single crystal ingot by the device due to the arrangement of the feeding module, the residue feeding module and the welding coil, so that a plurality of polysilicon rods can be used for preparing one silicon single crystal ingot, thus saving auxiliary working hours and energy consumption, expanding single weight of the single silicon single crystal ingot, improving production efficiency and becoming a technical means for efficiently preparing zone melting silicon single crystal; and the silicon melting is kept stable during the material changing period, a quartz crucible is not needed, and the pollution of oxygen impurities of the quartz crucible can be avoided. Specifically, when the first polycrystalline silicon rod is melted to a preset length, the polycrystalline silicon rod residual material is clamped and fed continuously through the residual material feeding module, meanwhile, new polycrystalline silicon rod materials are loaded and are in butt joint with the polycrystalline silicon rod residual material through the unloading and restoring to an initial state of the feeding module, the welding coil is used for realizing the connection of the polycrystalline silicon rod residual material and the new polycrystalline silicon rod materials through the fusion welding of the polycrystalline silicon rod residual material, after the welding is finished, the residual material feeding module is used for unloading, the feeding module is used for feeding materials, the whole silicon single crystal growth process is circulated, continuous feeding is realized, and the molten silicon is kept stable during the material changing period.
Compared with the prior art such as CN110195256A, the invention has the beneficial effects that:
(1) The quartz crucible is not used, so that the pollution risk of harmful impurities in the quartz crucible is eliminated, and all the advantages of the zone-melting method for drawing the silicon single crystal are reserved;
(2) The molten silicon liquid level is low, a mature zone-melting crystal pulling process is used, and the continuity and stability of the production process are good;
a kind of electronic device with high-pressure air-conditioning system:
(3) The feeding module and the silicon single crystal ingot supporting crystal pulling module are respectively arranged in the upper furnace chamber and the lower furnace chamber, and the isolation valve is horizontally arranged, so that the whole height of the furnace body is lower, the space of a factory building is saved, and the energy conservation is facilitated.
In addition, in the preferred scheme of the invention, the new material head of the polysilicon rod is provided with the welding ring, and in the welding process, as a certain space is arranged in the welding ring, the wall of the welding ring is thinner relative to the solid polysilicon rod, the welding process is more stable, the welding stress is small, the energy is saved, and the risk of molten silicon dripping during welding can be reduced.
In the scheme of the invention for preferably supporting the crystal pulling module of the silicon single crystal ingot, the seed chuck driving device can independently finish seed crystal driving in the steps of seeding and shouldering, and the whole supporting mechanism (namely the silicon single crystal ingot supporting crystal pulling module) comprising a base and the like is not required to follow up during seeding and shouldering, so that the seed chuck driving device has small inertial mass and can quickly respond to the change of temperature and pulling speed to stabilize the seeding and shouldering process.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing the structure and operation of an apparatus for growing a silicon single crystal by zone-melting continuous feeding according to example 1 of the present invention;
FIG. 2 is a schematic view of a partial structure and an operating state of the vicinity of the welding coil and the remainder feeding module in FIG. 1;
fig. 3 is a schematic view of a partial structure and an operating state near the feeding module.
Icon: 11-new polysilicon rod material; 111-clamping grooves; 112-slots; 12-polycrystalline silicon rod remainder; 13-welding rings; 14-abutting surface; 15-a silicon melting area; a 16-silicon single crystal ingot; 17-seed crystal; 21-welding the coil; 22-electromagnetic confinement heater; 31-isolation valve; 32-isolation valve drive means; 04-a feeding module; 41-feeding driving device; 42-screw pair; 421-feeding screw rod; 43-clamping the head base; 44-high temperature spring; 45-clamping head, 451-releasing mutual pushing surface; 05-a remainder feeding module; 51-lifting driving device; 52-screw rod; 53-a rotary drive; 54-guide shaft; 55-rotating arm; 56-plug; 561-ferrule; 06-a silicon single crystal ingot supporting crystal pulling module; 61-pulling a screw pair; 611-pulling a screw; 63-a crystal pulling drive; 64-seed chuck drive means; 65-a seed chuck; 66-a silicon single crystal ingot supporting device; 67-clamping claws; 68-clamping driving device, 69-base; 07-charging chamber; 08-lower furnace chamber.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The features and capabilities of the present invention are described in further detail below in connection with the examples.
Example 1
As shown in fig. 1, 2 and 3, an embodiment of the present invention provides an apparatus for growing a silicon single crystal by zone-melting continuous feed, comprising:
a feeding module 04, a remainder feeding module 05, a silicon single crystal ingot supporting and pulling module 06 and a furnace body formed by an upper furnace chamber 07 and a lower furnace chamber 08;
an openable and closable horizontally arranged isolation valve 31 for isolating the upper furnace chamber 07 and the lower furnace chamber 08 is horizontally arranged in the furnace body, and a feeding module 04 is used for feeding a new material 11 of a first polysilicon rod into the lower furnace chamber 08 and providing polysilicon raw materials for the silicon melting area 15;
a feeding module 04 is arranged in the upper furnace chamber 07, and the clamping center of a clamping head 45 of the feeding module 04 is coincident with the center vertical line of the welding coil 21 positioned in the lower furnace chamber 08;
A welding coil 21, an electromagnetic restraint heater 22 and a silicon single crystal ingot supporting and pulling module 06 are coaxially arranged in the lower furnace chamber 08 from top to bottom in sequence;
a feeding module 04 provided in the upper furnace chamber 07, comprising: the feeding driving device 41, the screw pair 42, the clamping head seat 43, the high-temperature spring 44 and the clamping heads 45, wherein opposite surfaces of the two clamping heads 45 are upward-inclined and downward-inclined holding-releasing mutual pushing surfaces 451, the clamping heads 45 clamp the new polysilicon rod 11, and the feeding driving device 41 drives the feeding screw 421 of the screw pair 42 to drive the clamping head seat 43 and the clamping heads 45 to continuously feed; when the new material 11 of the polycrystalline silicon rod is clamped to a preset length and is clamped and fed continuously by the residual material feeding module 05, the two feeding driving devices 41 rotate relatively to opposite directions, so that the two clamping heads 45 move up and down reversely, the high-temperature springs 44 on the back faces are pressed by the inclined surfaces of the two clamping heads 45, the two clamping heads 45 are pushed to be separated from the slots 112 (or the clamping grooves 111) on the new material 11 of the polycrystalline silicon rod, the new material 11 of the polycrystalline silicon rod is released, and returns to the upper furnace chamber 07 to load the new material 11 of the polycrystalline silicon rod.
The clout pay-off module 05, it installs in lower stove cavity 08, includes: the device comprises a lifting driving device 51, a screw rod 52, a guide shaft 54, a rotating driving device 53, a rotating arm 55 and a plug 56, wherein one end of the guide shaft 54 penetrates through the rotating driving device 53, the rotation freedom degree between the guide shaft 54 and the rotating driving device 53 is limited by means of the spline-shaped outer profile cross section of the guide shaft 54, meanwhile, the freedom degree of lifting movement of the guide shaft 54 is kept, the guide shaft 54 and the screw rod 52 form a screw rod pair, the guide shaft 54 is fixedly connected with the rotating arm 55, the rotating arm 55 is connected with the plug 56, the tangential direction of rotation of the rotating arm 55 is perpendicular to the central axis of the polycrystalline silicon rod residual material 12 by means of the cooperation driving of the lifting driving device 51 and the rotating driving device 53, the lifting movement direction of the rotating arm 55 is parallel to the central axis of the polycrystalline silicon rod residual material 12, so that the guide shaft lifting driving device 51 and the rotating driving device 53 drive the rotating arm 55 to control the plug 56 to rotate to be inserted into a slot 112 preset in the polycrystalline silicon rod new material 11 for clamping and feeding, and the polycrystalline silicon raw material is provided for the molten silicon region 15. The clamping plug 56 is used for clamping the polycrystalline silicon rod remainder 12 in the previous period to replace the feeding module 04 for clamping feeding, so that the feeding module 04 can conveniently clamp the new polycrystalline silicon rod remainder 11 in the next period. The plug 56 is externally sleeved with a ferrule 561 of metallic molybdenum to prevent the polycrystalline silicon rod remainder 12 at high temperature from directly contacting with harmful metals.
And the welding coil 21 is used for welding the tail part of the polycrystalline silicon rod residual material 12 and the head part of the polycrystalline silicon rod new material 11 after the residual material feeding module 05 clamps the polycrystalline silicon rod residual material 12 and the feeding module clamps the tail part of the polycrystalline silicon rod new material 11 and the tail part of the polycrystalline silicon rod residual material 12 in alignment, so that the continuous feeding is realized by continuously feeding through the feeding module 04 after the residual material feeding module 05 is released. In this embodiment, the welding coil 21 is disposed 500mm above the electromagnetic constraint heater in the lower furnace chamber 08, and the welding coil and the electromagnetic constraint heater are coaxially disposed and located on the outer circumferential surface of the polysilicon rod, the outer diameter of the polysilicon rod is 80mm, the inner diameter of the welding coil is 100mm, the number of turns of the coil is single turn, the frequency of the power supply is 2.5MHz, and the apparent heating power P of the welding coil is:
wherein a is 1.92×10 -2 1.744, b is taken and taken:
when the butt-joint surface 14 of the two butt-jointed polycrystalline silicon bars enters the welding action area of the welding coil 21, the welding coil 21 performs welding of the butt-joint part of the polycrystalline silicon bars.
The requirements of factors such as specific process conditions, power supply frequency, coil shape, machining state of the polycrystalline silicon rod, gap change between the coil and the polycrystalline silicon rod and the like on welding power are required to be designed and adjusted on site under the teaching of the prior art.
In order to smoothly realize feeding and welding, a prefabricated slot 112 extending along the circumferential direction is arranged on the cylindrical surface of the tail part of the residual polysilicon rod material 12, and in this embodiment, the distance between the slot 112 and the tail end of the residual polysilicon rod material 12 is 200mm.
Further, in this embodiment, a pit with a diameter phi of 50mm and a depth of 5mm is machined in the center of the end face of the tail end of the polycrystalline silicon rod remainder 12, so that the implementation of welding is facilitated.
A silicon single crystal ingot supporting crystal pulling module 06 comprising: the 2-pair crystal pulling screw pair 61 and the 2-pair guide rod are symmetrically distributed, and the 2-pair crystal pulling driving device 63, the seed chuck driving device 64, the seed chuck 65, the silicon single crystal ingot supporting device 66, the clamping claw 67, the clamping driving device 68 and the base 69; the seed chuck driving device 64, the seed chuck 65, the silicon single crystal ingot supporting device 66 and the clamping claw 67 are all arranged at the lower part of the lower furnace chamber 08 and are coaxially arranged with the electromagnetic restraint heater 22, the seed chuck driving device 64 can independently drive the movement of the seed crystal 17 relative to the base 69, and the axes of the crystal pulling screw 611, the guide rod and the silicon single crystal ingot 16 are respectively parallel side by side.
Further, the device for growing the silicon single crystal by zone melting continuous feeding further comprises a vacuumizing device, and the upper furnace chamber 07 and the lower furnace chamber 08 are respectively connected with the vacuumizing device through vacuumizing pipelines. When the feeding module 04 is restored to the initial state, the isolation valve 31 needs to be controlled to isolate the upper furnace chamber 07 from the lower furnace chamber 08, external air can enter the upper furnace chamber 07 in the charging process, the upper furnace chamber 07 is closed after the charging is completed, the upper furnace chamber 07 is vacuumized through the vacuumizing device, then the atmosphere of the upper furnace chamber 07 is restored, and the isolation valve 31 is opened to continue welding and feeding work.
Further, the height of the upper furnace chamber in this embodiment is 4.5m, and the height of the lower furnace chamber is 5m. The lifting of the silicon single crystal ingot supporting crystal pulling module 06 in the embodiment is driven by 2 crystal pulling screw pairs 61, and each crystal pulling screw pair 61 is synchronously driven by a driving device; the crystal pulling screw pair 61 is arranged in the lower furnace chamber 08 and supported on the chamber wall, the crystal pulling driving device 63 is positioned at the lower end of the crystal pulling screw pair 61 and is arranged in the lower furnace chamber 08.
Further, a seed chuck 65 and a seed chuck driving device 64 thereof are installed at the center of the horizontal plane of the silicon single crystal ingot supporting crystal pulling module 06, and are coaxially arranged with the new polysilicon rod 11, and the seed chuck 65 has a lifting degree of freedom independently. The front end of the seed chuck 65 is coaxially provided with a seed crystal 17 for finishing fine operations such as seeding, shouldering and the like which need quick reaction;
another function of the seed chuck 65 and the seed chuck driving device 64 is to assist in fixing and supporting the silicon single crystal ingot 16, and when the crystal is pulled to a predetermined weight, the seed 17 is pulled down and locked by the seed chuck driving device 64, so that the shoulder of the silicon single crystal ingot 16 is tightly attached to the silicon single crystal ingot supporting device 66, thereby achieving the assist in fixing and supporting the silicon single crystal ingot 16; when the silicon single crystal ingot grows to a preset length, the clamping jaw 67 is driven by the clamping driving device 68 to clamp and fix the side wall of the silicon single crystal ingot 16.
The method for growing the silicon single crystal by zone-melting continuous feeding provided by the embodiment is implemented by the device provided by the embodiment and comprises the following steps:
the equipment and the crystal growth environment are set according to the working conditions of the conventional zone-melting silicon single crystal, including the protective gas, the air pressure and the flow rate of the crystal growth environment, the cooling and the temperature gradient control device, and the zone-melting crystal pulling is carried out by the conventional technology. In particular, the method comprises the following steps:
s1, seeding:
melting the thin neck end (pre-processing) of the head of the new polycrystalline silicon rod 11 near the electromagnetic constraint heater 22, completing seeding and shouldering under the guidance of the seed crystal 17 and driven by the seed chuck driving device 64, and then carrying out shouldering;
s2, splicing materials:
when the new polycrystalline silicon rod 11 is melted to a preset residual length, forming polycrystalline silicon rod residual materials 12, starting a residual material feeding module 05 to clamp and feed the polycrystalline silicon rod residual materials 12, simultaneously controlling a feeding module 04 to release the polycrystalline silicon rod residual materials 12, and returning the feeding module to the upper furnace cavity 07 to restore to a feeding preparation state;
the isolation valve 31 is controlled to isolate an upper furnace chamber 07 from a lower furnace chamber 08, the upper furnace chamber 07 is inflated to be balanced with atmospheric pressure, the upper furnace chamber 07 is opened, a new polycrystalline silicon rod material 11 is loaded on the feeding module 04, the upper furnace chamber 07 is closed, the upper furnace chamber 07 is vacuumized, then the atmosphere of the upper furnace chamber 07 is restored, the isolation valve 31 is opened through the isolation valve driving device 32, the feeding module 04 is controlled to send the new polycrystalline silicon rod material 11 to the butt joint surface of the tail part of the polycrystalline silicon rod residual material 12, so that the end surfaces of the two polycrystalline silicon rods are in butt joint and the butt joint is positioned in a welding action area of the welding coil 21;
Starting the welding coil 21, melting the butt joint surfaces of the two polysilicon rods, and electromagnetically restraining the molten silicon through the welding coil 21 to prevent the molten silicon from falling down, so that the molten part is cooled, and welding is completed;
the residual material feeding module 05 is released from the welded polycrystalline silicon rod and is restored to a state of feeding by the feeding module 04;
thus, a quasi-cylindrical zone-melting silicon single crystal ingot 16 with a single weight greater than that of one polycrystalline silicon rod can be obtained by several material feeding.
S3, supporting and clamping the silicon single crystal ingot 16
When the preset weight is pulled, the seed crystal 17 is pulled down and locked through the seed chuck driving device 64, so that the shoulder of the silicon single crystal ingot 16 is tightly attached to the silicon single crystal ingot supporting device 66, and the fixing and supporting of the silicon single crystal ingot 16 are realized; when the silicon single crystal ingot 16 grows to a preset length, the clamping claw 67 is driven by the clamping driving device 68 to clamp and fix the side wall of the silicon single crystal ingot 16;
compared with the prior art, the beneficial effects of the embodiment are that:
1) Compared with the silicon single crystal prepared by the zone melting method in the prior art, the continuous feeding and continuous crystal pulling purposes are achieved by the technical means of electromagnetic induction welding (alternating current is introduced into a welding coil so that a changing magnetic field is generated in the middle of the welding coil and the current is induced in a silicon rod to realize heating). Therefore, a plurality of polysilicon rods can be used for preparing one zone-melting silicon single crystal ingot, auxiliary working hours and energy consumption are saved, the single weight of the single silicon single crystal ingot is increased, and the production efficiency is improved.
2) The solution provided by this example maintains all the advantages of the zone-melted silicon single crystal, as compared with the silicon single crystal produced by the Czochralski method of the prior art. The process method of multiple feeding is simple, has less interference to the crystal pulling process, and is beneficial to improving the quality of the silicon single crystal ingot.
3) The feeding module and the silicon single crystal ingot supporting crystal pulling module are respectively arranged in the upper furnace chamber and the lower furnace chamber, and the isolation valve is horizontally arranged, so that the whole height of the furnace body is lower, the space of a factory building is saved, and the energy conservation is facilitated.
4) In the preferred scheme of the invention, the welding ring 13 is arranged at the head of the new polycrystalline silicon rod, and in the welding process, as a certain space is arranged in the welding ring, the wall of the welding ring is thinner relative to the solid polycrystalline silicon rod, the welding process is more stable, the welding stress is small, the energy is saved, and the risk of molten silicon dripping during welding can be reduced.
Compared with the prior art CN110195256A, the invention has the beneficial effects that:
(1) The quartz crucible is not used, so that the pollution risk of harmful impurities in the quartz crucible is eliminated, and all the advantages of the zone-melting method for drawing the silicon single crystal are reserved;
(2) The molten silicon liquid level is low, a mature zone-melting crystal pulling process is used, and the continuity and stability of the production process are good;
In conclusion, the technical scheme provided by the invention has obvious cost advantages and cost reduction potential, and has important significance for the development of industry.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An apparatus for growing silicon single crystal by zone-melting continuous charging, comprising a furnace body having an upper furnace chamber (07) and a lower furnace chamber (08), an electromagnetic confinement heater (22) provided in the lower furnace chamber (08), a vacuum-pumping device and a shielding gas flow control device provided on the furnace body, a silicon single crystal ingot supporting crystal pulling module (06) provided in the lower furnace chamber (08), and an isolation valve (31) provided between the upper furnace chamber (07) and the lower furnace chamber (08), characterized by further comprising:
the feeding module (04) is arranged in the upper furnace chamber (07) and is provided with a clamping head (45) for clamping the new polycrystalline silicon rod material (11) and continuously feeding, and automatically unbinding the residual polycrystalline silicon rod material (12) and returning to the upper furnace chamber (07) when the clamped new polycrystalline silicon rod material (11) is consumed to a preset length and is clamped by the residual material feeding module (05) for continuous feeding;
The residual material feeding module (05) is arranged in the lower furnace chamber (08) and is provided with a clamping plug (56), and is used for clamping the residual material (12) of the polycrystalline silicon rod in the previous period through the clamping plug (56) to replace the feeding module (04) for clamping and feeding when continuous feeding is carried out, so that the feeding module (04) can clamp the new material (11) of the polycrystalline silicon rod in the subsequent period conveniently;
the welding coil (21) is arranged above the electromagnetic constraint heater (22) in the lower furnace chamber (08) and is positioned on the outer peripheral surface of the polycrystalline silicon rod, and is used for clamping the polycrystalline silicon rod residual material (12) by the residual material feeding module (05), and simultaneously, after the feeding module (04) clamps the polycrystalline silicon rod new material (11) and the tail of the polycrystalline silicon rod residual material (12) are aligned, the tail of the polycrystalline silicon rod residual material (12) and the head of the polycrystalline silicon rod new material (11) are welded, so that after the residual material feeding module (05) is released, continuous feeding is realized by continuously feeding by the feeding module (04);
wherein, the clout pay-off module (05) includes:
a lifting drive device (51);
the upper end of the screw rod (52) is connected with the lifting driving device (51);
the upper end of the guide shaft (54) is sleeved outside the screw rod (52) to form a screw rod pair, and the upper part of the guide shaft is provided with a non-circular outer contour cross section;
The rotating driving device (53) is sleeved outside the non-circular outer contour cross section of the guide shaft (54) and is used for limiting the rotation freedom degree between the guide shaft (54) and the rotating driving device (53) by means of the non-circular outer contour cross section of the guide shaft (54) and simultaneously keeping the freedom degree of lifting movement of the guide shaft (54);
the first end of the rotating arm (55) is fixedly connected with the lower part of the guide shaft (54), and the second end of the rotating arm is close to the polycrystalline silicon rod;
the clamping plug (56) is fixedly connected with the second end of the rotating arm (55) and is used for driving the guide shaft (54) by means of the lifting driving device (51) and the rotation driving device (53) to drive the rotating arm (55) to control the clamping plug (56) to rotate so as to be inserted into a preset slot (112) of the new polycrystalline silicon rod material (11) for clamping and feeding or releasing.
2. The device according to claim 1, characterized in that the tail cylindrical surface of the new polysilicon rod material (11) is provided with a preset slot (112) extending along the circumferential direction, and the distance between the slot (112) and the tail end of the new polysilicon rod material (11) is 150mm-350mm;
and/or, the tail cylindrical surface of the new polycrystalline silicon rod material (11) is provided with preset clamping grooves (111), the clamping grooves (111) are symmetrically arranged, and the distance between the upper edge of each clamping groove (111) and the tail end of the new polycrystalline silicon rod material (11) is more than 2mm.
3. The device according to claim 1, wherein the feeding module (04) comprises a driving mechanism and telescopic sliding clamping heads (45) with release mutual pushing surfaces (451), the driving mechanism is at least two and is respectively connected with the corresponding clamping heads (45), the clamping heads (45) are positioned on the periphery of the polycrystalline silicon rod and are at least two and can be clamped in clamping grooves (111) of the polycrystalline silicon rod through the inner sides of the corresponding clamping heads (45) to form clamping, and the two release mutual pushing surfaces (451) positioned on opposite sides of the polycrystalline silicon rod can drive the clamping heads (45) to move mutually through the driving mechanism when the two opposite clamping heads (45) are respectively displaced along opposite directions perpendicular to the axial direction of the polycrystalline silicon rod, so that release is realized.
4. A device according to claim 3, wherein the drive mechanism comprises:
a feeding driving device (41);
the screw rod pairs (42) are at least two pairs and distributed outside the peripheral surface of the polycrystalline silicon rod, and are respectively in one-to-one correspondence with and connected with the feeding driving devices (41);
the clamping head seat (43) is provided with a sliding groove at one side close to the polycrystalline silicon rod for accommodating the clamping head (45) and enabling the clamping head (45) to slide along the direction perpendicular to the axial direction of the polycrystalline silicon rod, and is in one-to-one correspondence and connection with the screw rod pair (42) and used for lifting along with the screw rod pair (42);
And one end of the high-temperature spring (44) is arranged in the sliding groove of the clamping head seat (43), and the other end of the high-temperature spring is arranged on one side, far away from the polycrystalline silicon rod, of the clamping head (45).
5. The device according to claim 1, characterized in that the excess material feeding module (05) further comprises a ferrule (561) of crystalline silicon or metallic molybdenum, which is sleeved outside the clamping plug (56).
6. The device according to claim 1, characterized in that the welding coil (21) is arranged above the electromagnetic restraint heater (22) by 300mm-800mm, the welding coil (21) and the welding coil are coaxially arranged, the minimum inner diameter of the welding coil (21) is 6mm-30mm larger than the maximum transverse diameter of the new polysilicon rod (11), the number of turns of the welding coil (21) is 1-5 turns, the opening of the welding coil (21) is in a shape of big-end-down, the opening side wall bevel angle is 0 degrees-5 degrees, and the access power frequency of the welding coil (21) is 1.5MHz-3MHz.
7. Device according to claim 1, characterized in that the head of the new polysilicon rod (11) and/or the tail of the remainder of the polysilicon rod (12) are provided with a welding ring (13) of the same material as the polysilicon rod, the thickness of the welding ring (13) being 2-10 mm.
8. The device according to claim 7, wherein the welding ring (13) and the end part of the polysilicon rod where the welding ring is positioned are welded or are of an integrated structure, or the end surface of the polysilicon rod where the welding ring is positioned is provided with a protruding part, and the welding ring (13) is sleeved on the outer surface of the protruding part.
9. The apparatus according to claim 1, wherein the silicon single crystal ingot supporting crystal pulling module (06) comprises:
at least 2 pairs of crystal pulling rod pairs (61) which are disposed so as to be dispersed outside the outer peripheral surface of the silicon single crystal ingot (16) and are located in the lower furnace chamber (08), and which are each provided with a crystal pulling rod (611), each crystal pulling rod (611) being parallel to the axis of the silicon single crystal ingot (16) in parallel;
a crystal pulling drive (63) connected to the crystal pulling rod (611);
a seed chuck (65) coaxially disposed with the electromagnetic confinement heater (22);
a susceptor (69) which is located in the lower portion of the lower furnace chamber (08) and is driven by the crystal pulling drive means (63);
a seed chuck driving device (64) which is installed on the base (69), is connected with the lower end of the seed chuck (65) and is used for independently driving the seed, and is coaxially arranged with the electromagnetic constraint heater (22);
A silicon single crystal ingot supporting means (66) which is distributed at the bottom of the silicon single crystal ingot (16) to form a support from the bottom, which is disposed coaxially with the electromagnetic confinement heater (22), and which is mounted on the susceptor (69);
clamping claws (67) which are distributed outside the outer peripheral surface of the silicon single crystal ingot (16) to clamp the side wall of the silicon single crystal ingot (16), which are coaxially arranged with the electromagnetic confinement heater (22), and which are mounted on the susceptor (69);
and a clamp driving device (68) which is connected with the clamp claw (67) for driving, and which is mounted on the base (69).
10. A method for growing a silicon single crystal by zone-melting continuous feed, comprising feeding, seeding and shouldering, shoulder-turning, isodiametric growth and ending, characterized in that it uses the apparatus according to any one of claims 1 to 9 to grow a silicon single crystal ingot; the method further comprises the steps of:
and (3) splicing:
when the new polycrystalline silicon rod material (11) is melted to a preset residual length, forming polycrystalline silicon rod residual material (12), starting a residual material feeding module (05) to clamp and feed the polycrystalline silicon rod residual material (12), controlling a feeding module (04) to release the polycrystalline silicon rod residual material (12), and enabling the feeding module (04) to return to an upper furnace chamber (07) to restore to a feeding preparation state;
An isolation valve (31) is controlled to isolate an upper furnace chamber (07) from a lower furnace chamber (08), the upper furnace chamber (07) is inflated to be balanced with atmospheric pressure, the upper furnace chamber (07) is opened, new polycrystalline silicon rod materials (11) are loaded on a feeding module (04), the upper furnace chamber (07) is closed, the upper furnace chamber (07) is vacuumized, then the atmosphere of the upper furnace chamber (07) is restored, the isolation valve (31) is opened, the feeding module (04) is controlled to send new polycrystalline silicon rod materials (11) to the tail butt joint surface of polycrystalline silicon rod residual materials (12), the end surfaces of two polycrystalline silicon rods are in butt joint, and the butt joint surface is positioned in a welding action area of a welding coil (21);
starting the welding coil (21), melting the butt joint surfaces of the two polysilicon rods, and enabling the molten silicon not to fall down under the electromagnetic restraint action of the welding coil (21), so that the molten part is cooled, and welding is completed;
and the residual material feeding module (05) is used for holding the welded polycrystalline silicon rod, and the state of feeding by the feeding module (04) is recovered.
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| CN102041548B (en) * | 2009-10-16 | 2013-10-30 | 英利集团有限公司 | Zone melting furnace for purifying crystalline silicon and method for purifying crystalline silicon |
| CN107177882A (en) * | 2016-03-11 | 2017-09-19 | 上海新昇半导体科技有限公司 | Zone-melting process growing silicon single crystal gas injection and radio frequency heating integrated device and method |
| CN108754610B (en) * | 2017-12-17 | 2020-03-17 | 嘉兴金瑞光伏科技有限公司 | Continuous growth device for silicon crystal |
| CN110195256A (en) * | 2019-06-10 | 2019-09-03 | 苏州亚傲鑫企业管理咨询有限公司 | Monocrystalline silicon repeatedly feeds the device continuously grown and technique |
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