CN116171096A - Integrated piezoelectric sensing sandwich structure and manufacturing method thereof - Google Patents

Integrated piezoelectric sensing sandwich structure and manufacturing method thereof Download PDF

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CN116171096A
CN116171096A CN202310121629.0A CN202310121629A CN116171096A CN 116171096 A CN116171096 A CN 116171096A CN 202310121629 A CN202310121629 A CN 202310121629A CN 116171096 A CN116171096 A CN 116171096A
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piezoelectric
layer
button
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武湛君
杨正岩
马书义
杨雷
杨红娟
张佳奇
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Dalian Junsheng Technology Co ltd
Dalian University of Technology
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Dalian University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
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    • G01N29/2437—Piezoelectric probes
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    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
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    • G01N29/2437—Piezoelectric probes
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
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Abstract

The invention discloses an integrated piezoelectric sensing sandwich structure which comprises a plurality of button-type piezoelectric sensors attached to a flexible printed circuit layer, wherein the positive electrode and the negative electrode of each button-type piezoelectric sensor are sequentially welded to a positive electrode printed circuit and a negative electrode printed circuit of the flexible printed circuit layer and are embedded between a top insulating substrate and a bottom insulating substrate; the printed circuit of the flexible printed circuit layer provides an outward circuit connection. Compared with the traditional piezoelectric intelligent interlayer, the structure disclosed by the invention adopts an integrated button type piezoelectric sensing interlayer and has electromagnetic shielding property, wide temperature range applicability, reliability and durability.

Description

Integrated piezoelectric sensing sandwich structure and manufacturing method thereof
Technical Field
The invention relates to the field of structural health monitoring of aerospace vehicles, in particular to a button type piezoelectric sensing interlayer and an airborne integrated software and hardware guided wave monitoring system applicable to aerospace environments.
Background
The service time of the aerospace vehicle is longer, main bearing body structures such as a fuselage, a wing and the like are extremely easy to generate defects such as cracks, delamination, air holes and the like in the long-term service process, and great hidden danger is caused to the service safety of the advanced aerospace vehicle structure, so that the online damage online monitoring technology of the body structure in the service process is required to be developed. The ultrasonic guided wave structure health monitoring technology utilizes an embedded piezoelectric sensing network to acquire real-time information related to the health condition of a structure in the service process, analyzes characteristic parameters of the health of the structure by combining an advanced signal processing method and a structure physical model, identifies the current state of a diagnosis structure, reveals damage and performance degradation of the structure, predicts the failure form and the residual service life of the damaged structure, and provides safety and integrity assessment of the structure, thereby guiding operation control and optionally maintenance of aerospace equipment.
However, the aerospace environment requires more stringent sensors and monitoring systems, and has unstable and unsafe factors such as complex high and low temperatures, strong mechanical vibration loads, complex electromagnetic interference and the like. In addition, the integrated design, packaging, protection and layout of the piezoelectric sensor under the aerospace condition are difficult problems to be solved, and the sensor is required to have the characteristics of consistency, durability, wide-temperature-range applicability, electromagnetic interference resistance and the like. These aerospace environment limiting factors are not mentioned in the prior patents and documents, but the existence of these problems severely restricts the application of the ultrasonic guided wave health monitoring technology in the aspect of safety guarantee of aerospace vehicles. Therefore, there is a need to study piezoelectric sensors and piezoelectric smart sensing sandwich structures suitable for use in aerospace environments.
Disclosure of Invention
It is an object of the present application to address at least one of the problems with the prior art described above and to provide an improved piezoelectric sensor sandwich structure.
To this end, some embodiments of the present application provide an integrated piezoelectric sensing sandwich structure that includes a plurality of button piezoelectric sensors; a top insulating substrate, a bottom insulating substrate; the flexible sensor wiring layer and the flexible printed circuit layer are arranged between the top insulating substrate and the bottom insulating substrate; wherein, a plurality of through holes corresponding to the button type piezoelectric sensors are arranged on the flexible sensor wiring layer to connect the flexible printed circuit layer; the button-type piezoelectric sensors are attached to the flexible printed circuit layer, and the positive electrode and the negative electrode of each button-type piezoelectric sensor are sequentially welded to the positive electrode printed circuit and the negative electrode printed circuit of the flexible printed circuit layer and are embedded between the top-layer insulating substrate and the bottom-layer insulating substrate; the printed circuit of the flexible printed circuit layer provides an outward circuit connection.
In some embodiments, the integrated piezoelectric sensing sandwich structure further comprises a reserved interface disposed on one side of the integrated piezoelectric sensing sandwich structure; the printed circuit of the flexible printed circuit layer is directly communicated with the reserved interface, and the reserved interface is connected with an external guided wave signal excitation/acquisition hardware system to realize signal excitation and acquisition.
In some embodiments, a bare-die piezoelectric piece is employed as the piezoelectric layer in the button piezoelectric sensor; the piezoelectric sheets of the die in the plurality of button piezoelectric sensors have uniformity.
In some embodiments, the die piezoelectric pieces with consistency are obtained through screening, wherein the screening comprises measuring impedance of each die piezoelectric piece in the same batch, and rejecting unqualified die piezoelectric pieces by using a Gaussian anomaly detection algorithm.
In some embodiments, each of the button piezoelectric sensors comprises a piezoelectric unit comprising a piezoelectric layer, a backing layer above the piezoelectric layer, and a protective layer below the piezoelectric layer, the backing layer, piezoelectric layer, and protective layer being sequentially bonded with an epoxy; a shield case encapsulated outside the piezoelectric unit, the shield case including an upper shield case and a lower shield case, wherein grooves are provided in the upper and lower shield cases for positive and negative electrode leads; and an insulating gasket arranged between the upper shielding shell and the lower shielding shell, wherein the upper shielding shell, the insulating gasket and the lower shielding shell form a whole.
In some embodiments, the backing layer is 1mm thick; the thickness of the piezoelectric layer is 0.2mm; the thickness of the protective layer is 1mm; the circumference thickness of the shielding shell is 2mm, and the upper and lower thickness of the shielding shell is 0.5mm; the diameter of each layer is 6mm; the insulating gasket is annular, the inner diameter is 6mm, and the outer diameter is 12mm; the diameter of the finally formed button sensor is 12mm, and the height is 5mm.
Further embodiments of the present application provide a method for manufacturing an integrated piezoelectric sensing sandwich structure, comprising the steps of: shaping the button piezoelectric sensor by the following steps: establishing a three-dimensional finite element model of the backing layer, the piezoelectric layer, the protective layer, the insulating layer and the shielding shell; an implicit dynamics module is adopted to calculate an energy curve and an impedance curve of different diameters and different thicknesses of each layer; and integrating the optimal design scheme in the excitation energy and the frequency response.
In some embodiments, the button sensor thickness is selected in the method to be no greater than 8mm.
In some embodiments, in the method, the piezoelectric layer, the backing layer and the protective layer are sequentially bonded by epoxy resin to form the piezoelectric unit, grooves are engraved in the shielding shells for positive and negative electrode leads, and the insulating gaskets are added between the upper shielding shell and the lower shielding shell; and packaging the piezoelectric unit by the upper shielding shell, the lower shielding shell and the insulating gasket so that the anode and the cathode of the piezoelectric unit are connected with the anode and the cathode leads in the upper shielding shell and the lower shielding shell to manufacture the button piezoelectric sensor.
In some embodiments, the method comprises performing a durability test on the button piezoelectric sensor, wherein the durability test comprises placing the button piezoelectric sensor in a high-low temperature constant temperature test box for performing an environmental suitability test, and obtaining an impedance signal change condition of the button battery under high-low temperature circulation by using an impedance analyzer; then, the button piezoelectric sensor is stuck to the aluminum plate by using epoxy resin, and the aluminum plate is put into a tensile testing machine for fatigue testing; the survivability and durability of the button piezoelectric sensor are determined through a high-low temperature cycle test and a fatigue test experiment, and the service life of the button piezoelectric sensor is estimated.
The beneficial effects of the invention include, but are not limited to: the dispersibility of the piezoelectric sensor in the subsequent guided wave monitoring application can be reduced through consistency screening of the piezoelectric sheet, so that the damage diagnosis precision is improved; the influence of the shielding layer, the protective layer, the backing layer and the insulating layer on the acoustic response is analyzed through finite elements, the design and the optimization of the button piezoelectric sensor are carried out, and the high-reliability button piezoelectric sensor suitable for the intelligent interlayer is prepared; compared with the traditional bare chip piezoelectric sensor, the intelligent interlayer prepared by using the button piezoelectric sensor has electromagnetic shielding property, wide temperature range applicability, reliability and durability.
Drawings
Fig. 1 is a schematic structural view of a button piezoelectric sensor according to an embodiment of the present application.
Fig. 2 is a visual gaussian fit result graph of rejection of failed piezoelectric patches in a button piezoelectric sensor fabrication method according to an embodiment of the present application.
Fig. 3 is an exploded schematic view of an integrated piezoelectric sensing sandwich structure according to an embodiment of the present application.
Fig. 4 is a schematic diagram of an integrated piezoelectric sensing sandwich and structure according to an embodiment of the present application.
Fig. 5 is a schematic side cross-sectional view of an integrated piezoelectric sensing sandwich structure according to an embodiment of the application.
Fig. 6 is a schematic diagram of an application system of an integrated piezoelectric sensing sandwich structure according to an embodiment of the application.
Fig. 7 is a schematic diagram of damage identified by a guided wave monitoring system built up of an integrated piezoelectric sensing sandwich structure according to the present application.
Detailed Description
In order to facilitate understanding of those skilled in the art, the present invention will be further described with reference to the following examples and drawings, and it should be noted that the description of the embodiments is not intended to limit the invention.
The invention provides an active-passive integrated strong directivity circumferential distributed sensor, which is used for making the purposes, technical schemes and effects of the invention clearer and more definite, and is further described in detail below. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Specific structural and functional details disclosed herein are merely representative and are for purposes of describing example embodiments of the present application. This application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be noted that, in some alternative implementations, the functions/acts noted may occur out of the order noted in the figures. For example, two figures shown in succession may in fact be executed substantially concurrently or the figures may sometimes be executed in the reverse order, depending upon the functionality/acts involved.
The integrated piezoelectric sensing sandwich in some embodiments of the present application relates to improved button piezoelectric sensor structures and improved sandwich structures.
First, the improved button piezoelectric sensor 20 structure can be designed and manufactured.
As shown in fig. 1, the button piezoelectric sensor 20 may include a piezoelectric unit including a piezoelectric layer 21, a backing layer 22 above the piezoelectric layer 21, and a protective layer 23 below the piezoelectric layer, the backing layer 22, the piezoelectric layer 21, and the protective layer 23 being sequentially bonded with epoxy. The shield case 25 provided outside the piezoelectric unit may include an upper shield case 251 and a lower shield case 252, wherein grooves are provided in the upper shield case 251 and the lower shield case 252 for positive and negative electrode leads. An insulating spacer 24 is provided between the upper shield shell 251 and the lower shield shell 252, and the upper shield shell 251, the insulating spacer 24, and the lower shield shell are integrally formed.
The piezoelectric layer in each piezoelectric sensor may be a bare die piezoelectric chip. The piezoelectric sheet may be, for example, a PZT-5H type piezoelectric sheet.
The direct application of the bare chip piezoelectric chip 21 to guided wave monitoring in an aerospace environment does not consider the shielding effect nor the corresponding protection, and the piezoelectric layer 21, the backing layer 22, the protective layer 23, the insulating layer 24 and the shielding layer 25 are considered in the design process.
The analysis can be performed using the finite element software Abaqus to build up a three-dimensional finite element model of the piezoelectric layer 21, backing layer 22, protective layer 23, insulating layer 24 and shielding layer 25. The implicit dynamics module is adopted in the analysis of calculation, and the energy curves and impedance curves of different diameters and different thicknesses of each layer are calculated, so that the thickness of the designed button piezoelectric sensor 20 is not more than a preset thickness, for example not more than 8mm, the excitation energy and the frequency response are comprehensively excited, and the optimal design is selected. For example, the best reference is to a single layer diameter that can be selected for the button piezoelectric sensor 20 of 6mm, a backing layer 22 of 1mm in thickness, a piezoelectric layer 21 of 0.2mm in thickness, a protective layer 23 of 1mm in thickness, plus an outer shield 25 of 2mm in circumferential thickness, and up and down 0.5mm in thickness, an insulating layer 24 of annular insulating spacer with an inner diameter of 6mm and an outer diameter of 12mm, and a final button sensor of 12mm in diameter and 5mm in height, as shown in FIG. 1.
The designed button piezoelectric sensor 20 is prepared sequentially. The piezoelectric layer 21, the backing layer 22 and the protective layer 23 are sequentially bonded by epoxy resin to form a piezoelectric unit, the shielding layer 25 can be set as a shielding shell and designed as a split body of the upper shielding shell 251 and the lower shielding shell 252, grooves are engraved in the shielding shell 25 for arranging positive and negative electrode leads, and in the design that the upper shielding shell 251 is provided with positive electrode leads and the lower shielding shell 252 is provided with negative electrode leads, an annular insulating gasket 24 is added between the upper shielding shell 251 and the lower shielding shell 252 to prevent positive and negative electrode communication. Piezoelectric unit for upper shield case 251, insulating spacer 24 and lower shield case 252
A plurality of button piezoelectric sensors 20 are fabricated through the above-described process.
In order to ensure that the performance of button piezoelectric sensors used in the integrated button piezoelectric sensing hierarchical structure has consistency, consistency screening can be firstly performed on bare chip piezoelectric chips used in the button piezoelectric sensing hierarchical structure, wherein the consistency screening comprises measuring impedance of each piezoelectric chip in the same batch, and rejecting unqualified bare chip piezoelectric chips by using a Gaussian anomaly detection algorithm.
Specifically, each transfer for the same batch productionSensor reference numerals (1, 2,3, …, 100), impedance data S was obtained by measuring impedance data of 100 piezoelectric sheets produced in the same batch using an impedance analyzer 1 ，S 2 ，S 3 ，…，S 100 Feature group x is constructed by extracting features of average value and mean square frequency (1) ,x (2) Each set of characteristic data contains 100 corresponding characteristic values of the piezoelectric patches, and an average value is calculated for each set of impedance characteristics
Figure BDA0004080137190000051
Sum of variances sigma 2 The estimated value is shown as formula (1) and formula (2):
Figure BDA0004080137190000052
Figure BDA0004080137190000053
after the mean and variance estimates are obtained, a gaussian probability density distribution function p (x) is constructed next according to equation (3),
Figure BDA0004080137190000054
after a Gaussian density distribution function is obtained, a visual Gaussian fitting result diagram is drawn, points gathered in the diagram are selected as data of qualified piezoelectric sheets, a cross check set is constructed, probability density distribution numerical values of the cross check set are used as a threshold epsilon, and whether the data are abnormal or not is predicted.
Thus, bare chip piezoelectric pieces with better consistency are screened out, and 5 unqualified piezoelectric pieces are removed as shown in fig. 2.
Optionally, the prepared multi-button piezoelectric sensor 20 is placed in a high-low temperature constant temperature test box for environmental suitability test, and an impedance analyzer is used for obtaining the impedance signal change condition of the button piezoelectric sensor 20 under high-low temperature circulation. Next, the button piezoelectric sensor 20 was attached to an aluminum plate using epoxy, and the aluminum plate was put into a tensile tester for fatigue testing. The survivability and durability of the button piezoelectric sensor are determined through the high-low temperature cycle test and the fatigue test experiment, and the service life of the button piezoelectric sensor is estimated.
Then, the integrated piezoelectric sensing sandwich structure 100 is formed based on the above-described plurality of button piezoelectric sensors 20. In one embodiment, as shown in fig. 3, 4 and 5, the integrated piezoelectric sensing sandwich structure 100 includes a top insulating substrate 10, a plurality of button piezoelectric sensors 20, a flexible sensor wiring layer 30, a flexible printed circuit layer 40, a bottom insulating substrate 50 and a reserved interface 60, as shown in fig. 4, which is a schematic diagram of the integrated piezoelectric sensing sandwich structure. The same number of sensor wiring through holes 31 as the button piezoelectric sensors 20 are provided in the flexible sensor wiring layer 30 to connect the flexible printed circuit layer 40. The anode and the cathode on the button piezoelectric sensor 20 are sequentially welded to the flexible printed circuit layer 40, the anode printed circuit 41 and the cathode printed circuit 42 on the flexible printed circuit layer 40 are directly connected with the reserved interface 60 of the intelligent sandwich structure 100, the reserved interface 60 can be arranged on one side of the integrated piezoelectric sensing sandwich structure 100, for example, one side of a narrow side shown in fig. 5 forms a tail end interface, and the tail end interface can be connected with the guided wave signal excitation/acquisition hardware system 200 to realize signal excitation and acquisition.
It should be understood that the reserved interface 60 is not limited to the narrow side of the integrated piezoelectric sensing sandwich structure, but may be disposed on the wide side thereof.
It should be appreciated that the plurality of button piezoelectric sensors 20 may be arranged in any desired manner. For example, it may be a two-dimensional array as shown in fig. 3 or a linear arrangement as shown in fig. 5.
The integrated button piezoelectric sensing sandwich 100 may be integrated onto the structure 500 under test by epoxy, as shown in fig. 6.
Next, the integrated piezoelectric sensing sandwich structure 100 is connected with the elastic guided wave acquisition module hardware system 200 through the reserved interface 60, and the elastic guided wave acquisition module hardware system 200 is connected with the ground monitoring software system 300 and/or the on-line monitoring software system 400 in a communication manner, as shown in fig. 6, so that an integrated damage diagnosis test platform is formed to test the structural defect of the structure 500 to be tested. Exemplary test results are shown in fig. 7.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
It should be understood that the above description is not intended to limit the invention to the particular embodiments disclosed, but to limit the invention to the particular embodiments disclosed, and that the invention is not limited to the particular embodiments disclosed, but is intended to cover modifications, adaptations, additions and alternatives falling within the spirit and scope of the invention.

Claims (10)

1. Integral piezoelectric sensing sandwich structure, its characterized in that: comprising
A plurality of button piezoelectric sensors;
a top insulating substrate, a bottom insulating substrate; the flexible sensor wiring layer and the flexible printed circuit layer are arranged between the top insulating substrate and the bottom insulating substrate;
wherein, a plurality of through holes corresponding to the button type piezoelectric sensors are arranged on the flexible sensor wiring layer to connect the flexible printed circuit layer;
the button-type piezoelectric sensors are attached to the flexible printed circuit layer, and the positive electrode and the negative electrode of each button-type piezoelectric sensor are sequentially welded to the positive electrode printed circuit and the negative electrode printed circuit of the flexible printed circuit layer and are embedded between the top-layer insulating substrate and the bottom-layer insulating substrate; the printed circuit of the flexible printed circuit layer provides an outward circuit connection.
2. The integrated piezoelectric sensing sandwich structure of claim 1, wherein: the piezoelectric sensor comprises an integrated piezoelectric sensing sandwich structure, and is characterized by also comprising a reserved interface arranged at one side of the integrated piezoelectric sensing sandwich structure; the printed circuit of the flexible printed circuit layer is directly communicated with the reserved interface, and the reserved interface is connected with an external guided wave signal excitation/acquisition hardware system to realize signal excitation and acquisition.
3. The integrated piezoelectric sensing sandwich structure of claim 1, wherein: a bare chip piezoelectric piece is adopted as a piezoelectric layer in the button piezoelectric sensor; the piezoelectric sheets of the die in the plurality of button piezoelectric sensors have uniformity.
4. The integrated piezoelectric sensing sandwich according to claim 3 wherein:
the bare chip piezoelectric pieces with consistency are obtained through screening, the screening comprises the steps of measuring the impedance of each bare chip piezoelectric piece in the same batch, and eliminating unqualified bare chip piezoelectric pieces by using a Gaussian anomaly detection algorithm;
the measuring the impedance of each bare chip piezoelectric piece in the same batch, and the removing unqualified bare chip piezoelectric pieces by using the Gaussian anomaly detection algorithm comprises the following steps:
each die piezoelectric piece in the same batch is numbered 1 to M, impedance data of the M die piezoelectric pieces produced in the same batch are measured by an impedance analyzer, and impedance data S is obtained 1 To S M ；
Extracting N groups of multidimensional time domain, frequency domain and time-frequency domain signal characteristic marks as x (1) ,x (2) ,x (3) ，…,x (j) ，…，
x (N) Each set of characteristic data comprises M numbers;
calculating an average value for each set of impedance features
Figure FDA0004080137180000011
Sum of variances sigma 2 Estimated values as shown in formula 1 and formula 2:
Figure FDA0004080137180000012
Figure FDA0004080137180000013
after the average and variance estimates are obtained, the probability density distribution function p (x) is constructed next according to equation (3):
Figure FDA0004080137180000021
after a Gaussian density distribution function is obtained, a Gaussian probability density distribution diagram is drawn, and points gathered in the diagram are selected as data of qualified bare chip piezoelectric chips, so that a cross test set is constructed;
using the probability density distribution value of the cross check set as a threshold epsilon and predicting whether the data is abnormal;
the die piezoelectric pieces without anomalies are determined to have a predetermined consistency.
5. The integrated piezoelectric sensing sandwich structure of claim 1, wherein: each button piezoelectric sensor comprises
The piezoelectric unit comprises a piezoelectric layer, a backing layer positioned above the piezoelectric layer and a protective layer positioned below the piezoelectric layer, wherein the backing layer, the piezoelectric layer and the protective layer are sequentially bonded by epoxy resin;
a shield case encapsulated outside the piezoelectric unit, the shield case including an upper shield case and a lower shield case, wherein grooves are provided in the upper and lower shield cases for positive and negative electrode leads; and
and the upper shielding shell, the insulating gasket and the lower shielding shell form a whole.
6. The integrated piezoelectric sensing sandwich according to claim 5 wherein: the backing layer has a thickness of 1mm; the thickness of the piezoelectric layer is 0.2mm; the thickness of the protective layer is 1mm; the circumference thickness of the shielding shell is 2mm, and the upper and lower thickness of the shielding shell is 0.5mm; the diameter of each layer is 6mm; the insulating gasket is annular, the inner diameter is 6mm, and the outer diameter is 12mm; the diameter of the finally formed button sensor is 12mm, and the height is 5mm.
7. A method of manufacturing an integrated piezoelectric sensing sandwich according to any of the preceding claims characterized in that: shaping the button piezoelectric sensor by the following steps: establishing a three-dimensional finite element model of the backing layer, the piezoelectric layer, the protective layer, the insulating layer and the shielding shell; an implicit dynamics module is adopted to calculate an energy curve and an impedance curve of different diameters and different thicknesses of each layer; and integrating the optimal design scheme in the excitation energy and the frequency response.
8. The method of manufacturing an integrated piezoelectric sensing sandwich according to claim 7 wherein: and selecting the thickness of the button sensor to be not more than 8mm.
9. The method of manufacturing an integrated piezoelectric sensing sandwich according to claim 7 wherein: sequentially bonding the piezoelectric layer, the backing layer and the protective layer by using epoxy resin to form the piezoelectric unit, engraving grooves in the shielding shell for positive and negative electrode leads, and adding the insulating gasket between the upper shielding shell and the lower shielding shell; and packaging the piezoelectric unit by the upper shielding shell, the lower shielding shell and the insulating gasket so that the anode and the cathode of the piezoelectric unit are connected with the anode and the cathode leads in the upper shielding shell and the lower shielding shell to manufacture the button piezoelectric sensor.
10. The method of manufacturing an integrated piezoelectric sensing sandwich according to claim 7 wherein: performing durability test on the button piezoelectric sensor, wherein the durability test comprises the steps of placing the button piezoelectric sensor into a high-low temperature constant-temperature test box for performing environmental adaptability test, and obtaining the impedance signal change condition of the button battery under high-low temperature circulation by using an impedance analyzer; then, the button piezoelectric sensor is stuck to the aluminum plate by using epoxy resin, and the aluminum plate is put into a tensile testing machine for fatigue testing; the survivability and durability of the button piezoelectric sensor are determined through a high-low temperature cycle test and a fatigue test experiment, and the service life of the button piezoelectric sensor is estimated.
CN202310121629.0A 2023-02-16 2023-02-16 Integrated piezoelectric sensing sandwich structure and manufacturing method thereof Pending CN116171096A (en)

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