CN116171048A - In-situ infrared dynamic sensing and calculation integrated array based on ferroelectric capacitor - Google Patents
In-situ infrared dynamic sensing and calculation integrated array based on ferroelectric capacitor Download PDFInfo
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Abstract
The invention discloses an in-situ infrared dynamic sensing and calculation integrated array based on a ferroelectric capacitor, and belongs to the field of semiconductor sensors. The array is composed of a plurality of pixels, each pixel is composed of a plurality of sensing and calculating integrated devices, the sensing and calculating integrated devices at the same position in different pixels are connected in parallel through connecting wires, the sensing and calculating integrated devices are deep-groove ferroelectric capacitors which are composed of bottom electrodes and top electrodes on deep-groove insulating substrates and ferroelectric materials between the bottom electrodes and the top electrodes, and the ferroelectric materials generate pyroelectric charge responses related to polarization intensity along with temperature changes. The invention realizes zero-power consumption in-situ infrared dynamic sensing and reduces the system power consumption and delay expenditure; and the information perception with weight is realized, the four-quadrant multiplication of the perception information and the weight in a single device is realized, and the complex sense internal calculation function is realized.
Description
Technical Field
The invention relates to the field of semiconductor sensors, in particular to an in-situ infrared dynamic sensing and calculation integrated array based on ferroelectric capacitors.
Background
With the gradual maturation of technologies such as big data and AI, explosive growth of data volume occurs. The traditional cloud-based information processing architecture with calculation as a core needs to mutually transmit a large amount of data between an edge end and a calculation center, and high delay and high power consumption overhead are caused. In addition, with the rapid development of the internet of things, the perception and identification of dynamic objects with extremely low power consumption have become the core requirements of a random sparse event wake-up system, and more serious challenges are presented to the system power consumption.
The emerging in-sense computing architecture combines the sensing unit and the information processing unit, directly realizes the product of the sensing information and the weight stored in the unit in the sensing unit, can realize the information processing at the sensing end, and can alleviate the problems of delay and power consumption caused by the traditional information transmission based on cloud computing. Based on the technical scheme that the sensing unit and the storage and calculation unit (generally RRAM) are connected in series to form the sensing and calculation unit, the kirchhoff principle is utilized to couple the sensing information with the weight of the storage and calculation unit to realize multiplication. However, this implementation incurs a large hardware overhead and also consumes a large amount of power due to the dc path present at the time of sensing. In addition, the sensing characteristic of the two-dimensional material is utilized, and the nonvolatile grid control of the charge storage transistor is combined to realize the intra-sense calculation function of a single device. However, this approach requires a higher programming voltage and the CMOS process compatibility and device reliability of the two-dimensional material are poor. In addition, the existing in-sense computing scheme still needs the support of a peripheral differential circuit to realize the processing and the identification of dynamic information, and extra hardware and power consumption cost are brought.
In recent years, researchers have found that ultra-thin hafnium oxide (HfO 2 ) Has ferroelectricity under specific doping, stress and annealing conditions. The material has the advantages of CMOS process compatibility, capability of being miniaturized and ultra-low power consumption programmingThere are many applications for storage and computing based on such materials. Since the spontaneous polarization intensity of the ferroelectric material changes with temperature, the ferroelectric material in a stable state releases charges, i.e., pyroelectric properties, when the ambient temperature changes. The characteristic of only responding to temperature change and the characteristic of no need of additional power consumption during sensing make the sensor have great application potential in the field of ultra-low power consumption dynamic sensing.
Disclosure of Invention
The invention aims to provide an in-situ infrared dynamic sensing and calculation integrated array based on a ferroelectric capacitor, which can realize the in-situ infrared dynamic sensing and calculation integrated function with ultra-low power consumption.
The specific technical scheme of the invention is as follows:
an in-situ infrared dynamic sensing and calculation integrated array based on ferroelectric capacitors is characterized by comprising a plurality of pixels P 1 ～P n The pixels are uniformly distributed on the substrate in a matrix form, and each pixel is provided with a plurality of integrated sensing devices arranged in a matrix form, wherein the i-th pixel is provided with an integrated sensing device SP i1 ～SP im The sensing and calculating integrated devices in the array are interconnected by a rear-end metal interconnection line, wherein the sensing and calculating integrated devices at the same position in different pixels are connected in parallel through the interconnection line, and each group of parallel sensing and calculating integrated devices corresponds to one output port; the sensing and calculating integrated device is a deep-groove ferroelectric capacitor formed by a bottom electrode and a top electrode on a deep-groove insulating substrate and a ferroelectric material between the two electrodes, and the ferroelectric material generates pyroelectric charge response along with temperature change; in a programming state, the trained artificial neural network synaptic weight w is obtained through voltage pulse nm Writing sense-all device SP in the form of spontaneous polarization intensity 11 ～SP nm In the sensing calculation state, the whole array is in a short circuit state, the changed infrared light intensity is converted into temperature change which is captured in the array, and different pixels sense different temperature changes delta T n While the sub-pixels with different weights stored therein output weighted pyroelectric response charges DeltaQ nm ＝w nm ·ΔT n The sensing and calculating integrated device connected in parallel at the same position in different pixels outputs pyroelectric charges with weight summation
And the matrix vector multiplication corresponding to the fully-connected neural network realizes the dynamic mode sensing function.
The top electrode is made of transparent conductive material, and the top electrode is preferably ITO;
the bottom electrode is metallic and is capable of providing sufficient stress to form ferroelectric crystals in the ferroelectric layer upon annealing, the bottom electrode comprising: tiN, taN, pt, mo, ru, etc.
The ferroelectric layer: adopts perovskite type ferroelectric (PZT, BFO, SBT), ferroelectric polymer (P (VDF-TrFE)) and other traditional ferroelectric materials or is based on HfO 2 Novel ferroelectric materials that produce ferroelectricity under specific treatments (doping, stress, annealing, etc.).
The depth of the deep groove capacitor groove is preferably 100nm, the diameter of the deep groove is preferably 50-150 nm according to the process, and the thickness of the top electrode and the bottom electrode is preferably 25-70 nm; the ferroelectric layer thickness is preferably 8 to 15nm.
The core of the invention is that a ferroelectric capacitor is utilized to form a sensing and calculation integrated device with an in-situ infrared dynamic sensing function, wherein the ferroelectric capacitor utilizes the pyroelectric property of a ferroelectric dielectric material to realize in-situ dynamic infrared sensing without extra power consumption; furthermore, the polarization intensity of the ferroelectric capacitor can be regulated and controlled in a nonvolatile way by utilizing an external electric field, and the dynamic infrared signal perception of nonvolatile imbalance can be realized. Wherein, the polarization intensity of the ferroelectric capacitor corresponds to the stored weight, and the different intensities and symbols of the polarization intensity are combined, thereby realizing multiplication of dynamic perception input and stored weight; the ferroelectric capacitors are formed into an array based on pixels and sub-pixels through wiring, each pixel is formed by a plurality of sensing and calculating integrated devices based on the ferroelectric capacitors, the sensing and calculating integrated devices at the same position in different pixels in the whole array are connected in parallel through the wiring and output uniformly, and multiplication and accumulation operation with weight in the sensor can be realized, so that the in-situ infrared dynamic sensing and calculating integrated function with ultra-low power consumption is realized. The sensing and calculating integrated device provided by the invention can realize in-situ dynamic sensing without sensing power consumption, and can realize four-quadrant multiplication with sign of sensing input and weight.
The invention has the beneficial effects and the corresponding principle:
1. the pyroelectric property of the ferroelectric material is utilized for sensing, so that in-situ dynamic sensing can be realized, and extra sensing power consumption is not needed.
The pyroelectric property of the ferroelectric medium, namely the change of spontaneous polarization intensity during temperature change, is utilized to generate the characteristic of current and charge response to carry out infrared detection, so that a response signal can only appear when the temperature or infrared light intensity changes, the sensing process is in a short circuit or open circuit state, extra sensing power consumption is not needed, and in-situ dynamic sensing of zero power consumption can be realized.
2. The characteristic that the pyroelectric property of the ferroelectric dielectric material changes along with the nonvolatile polarization intensity is utilized to realize different device sensitivities, so that the sensing output of the adjustable weight is realized.
When the ferroelectric material is in spontaneous polarization states with different directions and intensities, the pyroelectric current or charge responded at the electrode also changes with the difference of the spontaneous polarization directions and intensities under the same temperature change. The dielectric material has ferroelectricity, and the spontaneous polarization intensity can be regulated and controlled by an external electric field in a nonvolatile way, so that the sensing output of the adjustable weight can be realized.
Drawings
FIG. 1 is a schematic diagram of an in-situ infrared dynamic sensing and accounting integrated array based on ferroelectric capacitors according to an embodiment of the invention;
FIG. 2 is a schematic cross-sectional view of a sense-all-in-one device made in accordance with an embodiment of the present invention.
In the figure: 1-Substrate submount; 2-Pixel P 1 ～P n The method comprises the steps of carrying out a first treatment on the surface of the 3-sense calculation integrated device SP 11 ～SP nm 4-top electrode (ITO); 5-ferroelectric dielectric layer (Hf) 0.5 Zr 0.5 O 2 ) The method comprises the steps of carrying out a first treatment on the surface of the 6-bottom electrode (TiN); 7-Substrate (SiO) 2 )。
Detailed Description
The invention will be further illustrated by way of example with reference to the accompanying drawings.
As shown in fig. 1, this embodiment provides an in-situ infrared dynamic sensing and sensing integrated array based on ferroelectric capacitors, and a sensing and sensing integrated device SP 11 ～SP nm Array combination formed by parallel vertical arrangement forms pixel P 1 ～P n The sense and compute unified devices at the same position in different pixels are connected in parallel through the back-end metal interconnection line. As shown in fig. 2, the in-situ infrared dynamic sensing and calculation integrated device based on the ferroelectric capacitor is a ferroelectric capacitor formed by a top electrode, a bottom electrode and a ferroelectric medium layer on a deep groove substrate, wherein the ferroelectric medium layer is formed by the top electrode and the bottom electrode on the deep groove substrate: adopts perovskite type ferroelectric (PZT, BFO, SBT), ferroelectric polymer (P (VDF-TrFE)) and other traditional ferroelectric materials or is based on HfO 2 Novel ferroelectric materials that produce ferroelectricity under specific treatments (doping, stress, annealing, etc.). The depth of the deep groove capacitor groove is preferably 100nm, the diameter of the deep groove is preferably 50-150 nm according to the process, and the thickness of the electrode is preferably 25-70 nm. The ferroelectric layer thickness is preferably 8 to 15nm.
The invention also discloses a preparation process of the sensing and calculating integrated device based on the ferroelectric capacitor, which comprises the following steps:
(1) On SiO by lithography 2 Defining the position and the area of a deep groove on a substrate, and grooving the substrate by a wet etching or dry etching method;
(2) Preparing a bottom electrode in a deep groove by a Physical Vapor Deposition (PVD) method;
(3) Defining bottom electrode contact and connection line by photoetching;
(4) Growing a ferroelectric dielectric layer on the surface of the dielectric layer grown in the step (2) in an Atomic Layer Deposition (ALD) mode;
(5) Continuing to grow the top electrode by Physical Vapor Deposition (PVD);
(6) Defining the area of the capacitor by photoetching, removing other parts of materials by a wet etching or dry etching method, and exposing the bottom electrode;
(7) The material is subjected to ferroelectricity through Rapid Thermal Annealing (RTA) crystallization under certain conditions;
(8) Contact electrodes were prepared.
In a programming state, the trained artificial neural network synaptic weight w is obtained through voltage pulse nm Writing sense-all device SP in the form of spontaneous polarization intensity 11 ～SP nm In (a) and (b); when sensing the calculation state, the whole array is in a short circuit state, the changed infrared light intensity is converted into temperature change, the temperature change is captured by a capacitor in the array, and different pixels sense different temperature changes delta T n And the sense-calculation integrated device with different weights stored therein outputs the pyroelectric response charge delta Q with weight nm ＝w nm ·ΔT nm The sensing and calculating integrated device connected in parallel at the same position in different pixels outputs pyroelectric charges with weight summation
Matrix vector multiplication corresponding to the fully connected neural network realizes functions such as dynamic mode sensing.
According to the invention, the perceived infrared light changes in each pixel are consistent, each sensing and calculating integrated device connected in parallel is preprogrammed to a specific polarization intensity, and the infrared light changes are responded by different weights; the output of the arrays is different parallel sensing and calculation integrated device groups, the weighted summation output of the infrared dynamic signals is corresponding, and the arrays are connected through metal wires, so that the function of fully connecting the neural network is realized.
The beneficial effects of the invention are described by the embodiment:
1. in the prior art, additional modules such as a differential circuit are needed for carrying out dynamic sensing of environment information, so that the system power consumption and delay expenditure are increased; the pyroelectric property of the ferroelectric material is utilized to realize the function of the device which only responds to the change of the signal, and the device is in a short circuit state in the sensing process, so that extra sensing power consumption is not needed, and the zero-power consumption in-situ dynamic sensing capability of the device level is realized; the ferroelectric capacitor-based sensing and calculation integrated device realizes zero-power consumption in-situ infrared dynamic sensing by utilizing pyroelectric property, and reduces system power consumption and delay expenditure.
2. In the prior art, the function of integrating sensing and calculation needs to realize the response of a modulated signal, and the sensing with a symbol needs to be realized by a redundant unit; the invention realizes the perception of the device with weight and the nonvolatile storage of the weight by utilizing the characteristic that the pyroelectric property of the ferroelectric material changes along with the different spontaneous polarization states, and the four-quadrant multiplication computing capability in a single device is realized because the spontaneous polarization intensity and the perception signal have positive and negative signs; the sensing and calculating integrated device based on the ferroelectric capacitor realizes information sensing with weight by utilizing pyroelectric property regulated and controlled by spontaneous polarization intensity, realizes four-quadrant multiplication of sensing information and weight in a single device, and realizes the function of calculating complex sense.
Finally, it should be noted that the examples are disclosed for the purpose of aiding in the further understanding of the present invention, but those skilled in the art will appreciate that: various alternatives and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the disclosed embodiments, but rather the scope of the invention is defined by the appended claims.
Claims (6)
1. An in-situ infrared dynamic sensing and calculation integrated array based on ferroelectric capacitors is characterized by comprising a plurality of pixels P 1 ～P n The pixels are uniformly distributed on the substrate in a matrix form, each pixel is provided with a plurality of integrated sensing devices arranged in a matrix form, wherein the ith pixel is provided with an integrated sensing device SP i1 ～SP im The sensing and calculating integrated devices in the array are interconnected by a rear-end metal interconnection line, wherein the sensing and calculating integrated devices at the same position in different pixels are connected in parallel through the interconnection line, and each group of parallel sensing and calculating integrated devices corresponds to one output port; the sensing and calculating integrated device is a deep-groove ferroelectric capacitor formed by a bottom electrode and a top electrode on a deep-groove insulating substrate and a ferroelectric material between the two electrodes, and the ferroelectric material generates pyroelectric charge response along with temperature change; in a programming state, the trained artificial neural network synaptic weight w is obtained through voltage pulse nm Write sensing in the form of spontaneous polarization intensityIntegrated device SP 11 ～SP nm In the sensing calculation state, the whole array is in a short circuit state, the changed infrared light intensity is converted into temperature change which is captured in the array, and different pixels sense different temperature changes delta T n While the sub-pixels with different weights stored therein output weighted pyroelectric response charges DeltaQ nm ＝w nm ·ΔT n The sensing and calculating integrated device connected in parallel at the same position in different pixels outputs pyroelectric charges with weight summation
And the matrix vector multiplication corresponding to the fully-connected neural network realizes the dynamic mode sensing function.
2. The ferroelectric capacitor based in-situ infrared dynamic sensing integrated array of claim 1, wherein said top electrode is a light transmissive conductive material.
3. The ferroelectric capacitor based in situ infrared dynamic sensing integrated array of claim 1, wherein said bottom electrode is TiN, taN, pt, mo, ru.
4. The in-situ infrared dynamic sensing and accounting integrated array based on ferroelectric capacitor as set forth in claim 1, wherein said ferroelectric dielectric layer is made of perovskite ferroelectric, ferroelectric polymer conventional ferroelectric material or HfO based material 2 Ferroelectric materials are produced in doping, stress, annealing conditions.
5. The ferroelectric capacitor based in-situ infrared dynamic sensing integrated array according to claim 1, wherein the thickness of the top electrode or the bottom electrode ranges from 25 nm to 75nm.
6. The ferroelectric capacitor based in-situ infrared dynamic sensing integrated array of claim 1, wherein the ferroelectric dielectric layer thickness ranges from 8 nm to 15nm.
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| PCT/CN2023/089423 WO2024051170A1 (en) | 2022-09-09 | 2023-04-20 | In-situ infrared dynamic sensing and in-sensor computing array based on ferroelectric capacitor |
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