CN116168933A - Inductance device - Google Patents

Inductance device Download PDF

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Publication number
CN116168933A
CN116168933A CN202111402902.4A CN202111402902A CN116168933A CN 116168933 A CN116168933 A CN 116168933A CN 202111402902 A CN202111402902 A CN 202111402902A CN 116168933 A CN116168933 A CN 116168933A
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CN
China
Prior art keywords
coils
inductive device
winding
secondary winding
secondary windings
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Pending
Application number
CN202111402902.4A
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Chinese (zh)
Inventor
颜孝璁
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Realtek Semiconductor Corp
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Realtek Semiconductor Corp
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Application filed by Realtek Semiconductor Corp filed Critical Realtek Semiconductor Corp
Priority to CN202111402902.4A priority Critical patent/CN116168933A/en
Publication of CN116168933A publication Critical patent/CN116168933A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • H01F17/0006Printed inductances
    • H01F17/0013Printed inductances with stacked layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • H01F2027/2809Printed windings on stacked layers

Abstract

The present disclosure provides an inductive device including a plurality of coils. The coils comprise a first winding and a second winding. The first winding comprises a plurality of first sub-coils, wherein a first one of the first sub-coils is arranged in a first area, and a second one of the first sub-coils and a third one of the first sub-coils are arranged in a second area different from the first area. The second winding comprises a plurality of second secondary coils, wherein a first secondary coil is arranged in the second area, and a second secondary coil and a third secondary coil are arranged in the first area. Wherein each of the coils is composed of one of the first secondary coils and one of the second secondary coils.

Description

Inductance device
Technical Field
The present disclosure relates to electronic devices, and more particularly, to an inductance device.
Background
The conventional inductors of various types have advantages and disadvantages. The inductor with the alternately arranged coil structure has larger parasitic capacitance and lower inductance, resulting in lower self-resonant frequency (self-resonance frequency) and lower quality factor (quality factor). Therefore, the application range of the inductor is limited.
Disclosure of Invention
One aspect of the present disclosure is an inductive device. The inductance device comprises a plurality of coils. The coils comprise a first winding and a second winding. The first winding comprises a plurality of first sub-coils, wherein a first one of the first sub-coils is arranged in a first area, and a second one of the first sub-coils and a third one of the first sub-coils are arranged in a second area different from the first area. The second winding comprises a plurality of second secondary coils, wherein a first secondary coil is arranged in the second area, and a second secondary coil and a third secondary coil are arranged in the first area. Wherein each of the coils is composed of one of the first secondary coils and one of the second secondary coils.
In summary, the inductive device of the present disclosure has an advantage of reducing the equivalent parasitic capacitance value by configuring a plurality of coils for transmitting signals of the same polarity and a few coils for transmitting signals of different polarities in the same region. In addition, by means of the structure of the present disclosure, the inductance device can also improve the equivalent inductance value and the quality factor.
Drawings
Fig. 1 is a schematic structural diagram of an inductive device according to some embodiments of the present disclosure.
Fig. 2 is a schematic structural diagram of an inductive device according to some embodiments of the present disclosure.
Fig. 3 is a schematic structural diagram of an inductive device according to some embodiments of the present disclosure.
Fig. 4 is a schematic structural diagram of an inductive device according to some embodiments of the present disclosure.
Fig. 5 is a schematic structural diagram of an inductive device according to some embodiments of the present disclosure.
Fig. 6 is a schematic diagram of experimental data for an inductive device, shown in accordance with some embodiments of the present disclosure.
Detailed Description
The following detailed description of the embodiments is given by way of example only and not by way of limitation, and the scope of the present disclosure is not intended to be limited by the accompanying drawings, in which like reference numerals indicate like elements, and in which like elements are rearranged to provide a equivalent result.
The use of the term "terms" throughout the specification and claims is generally intended to have the ordinary meaning of each term used in the art, both in the context of the present disclosure and in the specific context, unless otherwise indicated.
As used herein, "coupled" or "connected" may mean that two or more elements are in direct physical or electrical contact with each other, or in indirect physical or electrical contact with each other, and may also mean that two or more elements are in operation or action with each other.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating an inductance device 100 according to some embodiments of the present disclosure. The inductance device 100 includes a plurality of coils, a first interlacing portion CN1, a second interlacing portion CN2, a central tap CT, and an input/output terminal IOE. Specifically, the plurality of coils of the inductance device 100 is composed of a first winding C1 (shown in a cross-wire grid) and a second winding C2 (shown in a dot-shaped grid).
In some embodiments, as shown in FIG. 1, the first winding C1 includes a plurality of first secondary windings FC 1-FC 3. The first sub-coil FC1 (i.e., a first one of the plurality of first sub-coils) is disposed in a first region R1, and the remaining first sub-coils FC2 to FC3 (i.e., a second one of the plurality of first sub-coils and a third one of the plurality of first sub-coils) are disposed in a second region R2 different from the first region R1. For example, the first region R1 is the right region in fig. 1, and the second region R2 is the left region in fig. 1.
The second winding C2 also includes a plurality of second secondary coils SC 1-SC 3. The second secondary coil SC1 (i.e., a first one of the plurality of second secondary coils) is disposed in the second region R2 together with the plurality of first secondary coils FC2 to FC3, and the remaining second secondary coils SC2 to SC3 (i.e., a second one of the plurality of second secondary coils and a third one of the plurality of second secondary coils) are disposed in the first region R1 together with the first secondary coil FC1.
In some embodiments, as shown in fig. 1, the plurality of coils of the inductive device 100 are each comprised of one of the plurality of first secondary coils FC 1-FC 3 and one of the plurality of second secondary coils SC 1-SC 3. For example, the inductance device 100 is configured with a first coil, a second coil, and a third coil sequentially from inside to outside. The first winding of the inductance device 100 is composed of a first secondary winding FC1 and a second secondary winding SC1, the second winding of the inductance device 100 is composed of a first secondary winding FC2 and a second secondary winding SC2, and the third winding of the inductance device 100 is composed of a first secondary winding FC3 and a second secondary winding SC3.
In some embodiments, the first staggered portion CN1 includes a plurality of connectors 101 and 102. As shown in fig. 1, the connection element 101 is used for coupling the first secondary winding FC1 and the first secondary winding FC2, and the connection element 102 is used for coupling the second secondary winding SC1 and the second secondary winding SC2. It is understood that the connectors 101 and 102 are disposed in a staggered manner and in different metal layers. For example, the connection element 101 is located on a first metal layer, and the connection element 102 is located on a second metal layer.
In some embodiments, the second staggered portion CN2 includes a plurality of connectors 201 and 202. As shown in fig. 1, the connection 201 is used for coupling the first secondary winding FC1 and the first secondary winding FC3, and the connection 102 is used for coupling the second secondary winding SC1 and the second secondary winding SC3. It is understood that the connectors 201 and 202 are also staggered with respect to each other and located in different metal layers. For example, the connection 201 is located on the second metal layer, and the connection 202 is located on the first metal layer.
In some embodiments, the first staggered portion CN1 is located on a first side S1 of the inductance device 100, and the second staggered portion CN2 is located on a second side S2 of the inductance device 100. As shown in fig. 1, the first side S1 (e.g., upper side) and the second side S2 (e.g., lower side) are opposite sides.
In the embodiment of fig. 1, the input/output terminal IOE is configured to input or output a signal, and is coupled to the first secondary winding FC2 and the second secondary winding SC2 at the second side S2 of the inductance device 100. In addition, the central tap CT is coupled to the first secondary winding FC3 and the second secondary winding SC3 at the first side S1 of the inductance device 100.
In some embodiments, the first secondary windings FC 1-FC 3 and the second secondary windings SC 1-SC 3 are disposed on the same metal layer as the connectors 101 and 202, i.e. on the first metal layer, but the disclosure is not limited thereto. In other embodiments, the plurality of first secondary windings FC 1-FC 3 and the plurality of second secondary windings SC 1-SC 3 are located in the second metal layer.
In some embodiments, the first metal layer is different from the second metal layer. For example, the first metal layer is an ultra-thick metal (UTM) layer, and the second metal layer is an aluminum redistribution layer (AL-RDL). It should be understood that the present disclosure is not so limited.
First, the structure of the first winding C1 is explained. In detail, the first secondary winding FC2 is coupled to the input/output terminal IOE at the second side S2, and is wound around the first side S1 in a clockwise direction from the second side S2, and is directly coupled to one end of the connecting member 101 at the first side S1. The other end of the connection member 101 is also directly coupled to the first secondary winding FC1. The first sub-coil FC1 is wound from the first side S1 to the second side S2 in a clockwise direction, and is coupled to one end of the connection member 201 at the second side S2 through a via hole (via). The other end of the connection member 201 is also coupled to the first secondary winding FC3 through a via. The first secondary winding FC3 is wound from the second side S2 to the first side S1 in a clockwise direction and is coupled to the central tap end CT directly or indirectly (e.g., via a via) at the first side S1.
Next, the structure of the second winding C2 will be described. In detail, the second secondary winding SC2 is coupled to the input/output terminal IOE at the second side S2, and is wound around the first side S1 in the counterclockwise direction from the second side S2, and is coupled to one end of the connecting member 102 at the first side S1 through the via hole. The other end of the connecting member 102 is also coupled to the second secondary winding SC1 through a via. The second secondary winding SC1 is wound from the first side S1 to the second side S2 in a counterclockwise direction, and is directly coupled to one end of the connecting member 202 at the second side S2. The other end of the connecting member 202 is also directly coupled to the second secondary winding SC3. The second secondary winding SC3 is wound around the first side S1 in a counterclockwise direction from the second side S2, and is directly or indirectly (e.g., via a via) coupled to the central tap end CT at the first side S1.
In the embodiment of fig. 1, the first secondary winding FC1 of the first winding C1 and the plurality of second secondary windings SC 2-SC 3 of the second winding C2 are distributed at different positions of the first region R1 (in other words, the first secondary winding FC1 of the first winding C1 and the plurality of second secondary windings SC 2-SC 3 of the second winding C2 do not overlap each other). The plurality of first secondary windings FC2 to FC3 of the first winding C1 and the second secondary winding SC1 of the second winding C2 are distributed at different positions in the second region R2 (in other words, the plurality of first secondary windings FC2 to FC3 of the first winding C1 and the second secondary winding SC1 of the second winding C2 do not overlap each other).
Specifically, in the second region R2 of fig. 1, the second secondary winding SC1 is separated from the first secondary winding FC2 by a first distance W1, the first secondary winding FC2 is separated from the first secondary winding FC3 by a second distance W2, and the first distance W1 is equal to the second distance W2. Similarly, in the first region R1 of fig. 1, the first secondary winding FC1 is separated from the second secondary winding SC2 by a first spacing W1, and the second secondary winding SC2 is separated from the second secondary winding SC3 by a second spacing W2.
It is understood that the first sub-coils FC1 to FC3 are each configured to transmit a first signal (e.g., a positive signal or a negative signal) with the same polarity, and the second sub-coils SC1 to SC3 are each configured to transmit a second signal (e.g., a negative signal or a positive signal) with the same polarity, and the first signal is different from the second signal. It should be noted that, through the arrangement of the first and second interlacing portions CN1 and CN2, most of the first secondary windings (e.g., the first secondary windings FC2 and FC 3) are arranged in the second region R2 and adjacent to each other, and most of the second secondary windings (e.g., the second secondary windings SC2 and SC 3) are arranged in the first region R1 and also adjacent to each other. Accordingly, since the plurality of coils in the same area are mostly responsible for transmitting the same polarity signal, the equivalent parasitic capacitance of the inductor device 100 can be greatly reduced, and the equivalent inductance and quality factor (Q) of the inductor device 100 can be greatly improved.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating an inductance device 200 according to some embodiments of the present disclosure. The same reference numerals as in fig. 1 denote the same or similar parts in fig. 2, and a detailed description thereof will not be repeated. In the second region R2 of fig. 2, the second secondary winding SC1 is separated from the first secondary winding FC2 by a first spacing W1', the first secondary winding FC2 is separated from the first secondary winding FC3 by a second spacing W2', and the first spacing W1 'is at least about 1.5 times the second spacing W2'. Likewise, in the first region R1 of fig. 2, the first secondary winding FC1 is separated from the second secondary winding SC2 by a first spacing W1', and the second secondary winding SC2 is separated from the second secondary winding SC3 by a second spacing W2'.
In the embodiment of fig. 2, the inductive device 200 of fig. 2 has a lower equivalent parasitic capacitance value than the inductive device 100 of fig. 1 due to the increased first spacing W1' between the first secondary winding FC1 and the second secondary winding SC2 (or between the second secondary winding SC1 and the first secondary winding FC 2).
In the embodiments of fig. 1 and 2, the coils of the inductive devices 100 and 200 are all located on the same metal layer, but the disclosure is not limited thereto. In other embodiments, portions of the windings of the inductive device overlap each other. The embodiment of fig. 3 will be described below as an example.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating an inductance device 300 according to some embodiments of the present disclosure. The same reference numerals as in fig. 1 denote the same or similar parts in fig. 3, and a detailed description thereof will not be repeated. In the second region R2 of fig. 3, the first secondary winding FC2 and the first secondary winding FC3 are located in different metal layers and overlap each other, and the second secondary winding SC1 and the first secondary winding FC3 are located in the same metal layer and do not overlap each other. Similarly, in the first region R1 of fig. 3, the second secondary coil SC2 and the second secondary coil SC3 are located in different metal layers and overlap each other, and the first secondary coil FC1 and the second secondary coil SC3 are located in the same metal layer and do not overlap each other. In other words, the second coil (i.e., the first secondary coil FC2 and the second secondary coil SC 2) and the third coil (i.e., the first secondary coil FC3 and the second secondary coil SC 3) of the inductive device 300 overlap each other and do not overlap the first coil (i.e., the second secondary coil SC1 and the first secondary coil FC 1) of the inductive device 300.
In the embodiment of fig. 3, since the second coil and the third coil of the inductor device 300 overlap each other, the inductor device 300 of fig. 3 has a higher equivalent inductance value and a higher quality factor (Q) than the inductor device 100 of fig. 1.
In the embodiments of fig. 1, 2 and 3, the central tap CT is located at the first side S1 of the inductive device, and the input/output terminal IOE is located at the second side S2 of the inductive device. However, the disclosure is not limited thereto, and the positions of the central tap CT and the input/output IOE may be changed according to the requirement. The embodiments of fig. 4 and 5 will be described below as examples.
Referring to fig. 4, fig. 4 is a schematic diagram illustrating an inductance device 400 according to some embodiments of the present disclosure. The same reference numerals as in fig. 1 denote the same or similar parts in fig. 4, and a detailed description thereof will not be repeated. In the embodiment of fig. 4, the central tap CT is located at the second side S2 of the inductive device 400, and the input/output terminal IOE is located at the first side S1 of the inductive device 400. Specifically, the central tap CT may be coupled to the first secondary winding FC2 and the second secondary winding SC2 at the second side S2 through vias, and at least located on different metal layers with the connectors 201 and 202, the second winding of the inductor device 400 (i.e., the first secondary winding FC2 and the second secondary winding SC 2), and the third winding of the inductor device 400 (i.e., the first secondary winding FC3 and the second secondary winding SC 3). In addition, the input/output terminal IOE is directly or indirectly coupled to the first secondary winding FC3 and the second secondary winding SC3 at the first side S1.
Referring to fig. 5, fig. 5 is a schematic diagram illustrating an inductance device 500 according to some embodiments of the present disclosure. The same reference numerals as in fig. 1 denote the same or similar parts in fig. 5, and a detailed description thereof will not be repeated. In the embodiment of fig. 5, the central tap CT is located at the second side S2 of the inductive device 500, and the input/output terminal IOE is located at the first side S1 of the inductive device 500. Specifically, the center tap CT may be coupled to the first secondary winding FC2 at the second side S2 through a connector 301, and may be coupled to the second secondary winding SC2 at the second side S2 through another connector 302. The plurality of connectors 301 and 302 are located in different metal layers. For example, connector 301 is located on a first metal layer as connector 202 and connector 302 is located on a second metal layer as connector 201. It will be appreciated that connector 301 is also staggered with respect to connector 201 and connector 302 is also staggered with respect to connector 202. In addition, the input/output terminal IOE is directly or indirectly coupled to the first secondary winding FC3 and the second secondary winding SC3 at the first side S1.
In the foregoing embodiments, the inductive device (e.g., the inductive device 100 in fig. 1, the inductive device 200 in fig. 2, the inductive device 300 in fig. 3, the inductive device 400 in fig. 4, the inductive device 500 in fig. 5) has a square structure (i.e., a quadrilateral structure). It should be understood that in other embodiments, the inductance device may have other polygonal structures. Furthermore, it should be appreciated that the structure of the inductance device in the foregoing embodiment is also applicable to the splayed inductance device.
It should be understood that the number of coils in the first winding C1 and the number of coils in the second winding C2 are for example only, and the present disclosure is not limited to the numbers shown in the figures. In other words, the number of the plurality of coils of the inductance device is not limited to 3 coils as shown in the figure.
Referring to fig. 6, fig. 6 is experimental data of an inductance device and experimental data of a known technology according to some embodiments of the present disclosure. As shown in fig. 6, with the architecture configuration of the present disclosure, the experimental curve of the quality factor is Q '(represented by a solid line), and the experimental curve of the inductance value is L' (represented by a solid line). With the known technique, the experimental curve of the quality factor is Q (shown by the dotted line), and the experimental curve of the inductance value is L (shown by the dotted line). As can be seen from fig. 6, the inductor device adopting the structure of the present disclosure has better quality factor and inductance value compared to the prior art. For example, at a frequency of 4.8GHz, the inductance value of the inductive device of the present disclosure is increased by about 15% compared to known techniques.
As can be seen from the above embodiments of the present disclosure, the inductor device of the present disclosure (e.g., the inductor device 100 in fig. 1, the inductor device 200 in fig. 2, the inductor device 300 in fig. 3, the inductor device 400 in fig. 4, and the inductor device 500 in fig. 5) has the advantage of reducing the equivalent parasitic capacitance value by configuring a plurality of coils for transmitting signals of the same polarity and a few coils for transmitting signals of different polarities in the same region. In addition, by means of the structure of the present disclosure, the inductance device can also improve the equivalent inductance value and the quality factor.
While the present disclosure has been described with reference to the embodiments, it should be understood that the invention is not limited thereto, but may be embodied with various changes and modifications within the spirit and scope of the present disclosure by those skilled in the art, and accordingly, the scope of the present disclosure is to be determined from the appended claims.
[ symbolic description ]
100, 200, 300, 400, 500: inductance device
101, 102, 201, 202, 301, 302: connecting piece
C1: first winding
C2: second winding
FC 1-FC 3: first secondary coil
SC1 to SC3: second secondary coil
CN1: first staggering part
CN2: second staggered part
CT: central tap end
R1: first region
R2: second region
S1: first side
S2: second side
IOE: input/output terminal
W1, W1': first distance of
W2, W2': and a second pitch.

Claims (10)

1. An inductive device, comprising:
a plurality of coils comprising:
a first winding including a plurality of first sub-coils, wherein a first one of the first sub-coils is disposed in a first region, and a second one of the first sub-coils and a third one of the first sub-coils are disposed in a second region different from the first region; and
a second winding including a plurality of second secondary coils, wherein a first one of the second secondary coils is disposed in the second region, and a second one of the second secondary coils and a third one of the second secondary coils are disposed in the first region;
wherein each of the coils is composed of one of the first secondary coils and one of the second secondary coils.
2. The inductive device of claim 1, wherein the first one of the second secondary windings, the second one of the first secondary windings and the third one of the first secondary windings are on the same metal layer and do not overlap each other;
wherein the first one of the first secondary coils, the second one of the second secondary coils and the third one of the second secondary coils are located on the same metal layer and do not overlap each other.
3. The inductive device of claim 2, wherein the first one of the second secondary windings is separated from the second one of the first secondary windings by a first spacing, the second one of the first secondary windings is separated from the third one of the first secondary windings by a second spacing, wherein the first spacing is equal to the second spacing.
4. The inductive device of claim 3, wherein the first one of the first secondary windings is separated from the second one of the second secondary windings by the first spacing, and the second one of the second secondary windings is separated from the third one of the second secondary windings by the second spacing.
5. The inductive device of claim 2, wherein the first one of the second secondary windings is separated from the second one of the first secondary windings by a first spacing, the second one of the first secondary windings is separated from the third one of the first secondary windings by a second spacing, wherein the first spacing is at least 1.5 times the second spacing.
6. The inductive device of claim 1, wherein the second one of the first sub-coils and the third one of the first sub-coils are located in different metal layers and overlap each other;
wherein the first one of the second secondary coils and the third one of the first secondary coils are located on the same metal layer and do not overlap each other;
wherein the second one of the second secondary coils and the third one of the second secondary coils are located in different metal layers and overlap each other;
wherein the first one of the first secondary coils and the third one of the second secondary coils are located on the same metal layer and do not overlap each other.
7. The inductive device of claim 1, wherein the inductive device further comprises a first interleaved portion for coupling the first one of the first secondary windings and the second one of the first secondary windings and for coupling the first one of the second secondary windings and the second one of the second secondary windings;
the inductance device further comprises a second staggered part, wherein the second staggered part is used for coupling the first one of the first secondary coils and the third one of the first secondary coils and is used for coupling the first one of the second secondary coils and the third one of the second secondary coils.
8. The inductive device of claim 7, wherein the first interlaced portion is located on a first side of the inductive device and the second interlaced portion is located on a second side of the inductive device, wherein the first side and the second side are opposite sides.
9. The inductive device of claim 8, wherein the inductive device further comprises an input/output terminal, and the input/output terminal is located on the second side of the inductive device and coupled to the second one of the first secondary windings and the second one of the second secondary windings.
10. The inductive device of claim 8, wherein the inductive device further comprises an input/output terminal, and the input/output terminal is located on the first side of the inductive device and coupled to the third one of the first secondary windings and the third one of the second secondary windings.
CN202111402902.4A 2021-11-24 2021-11-24 Inductance device Pending CN116168933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111402902.4A CN116168933A (en) 2021-11-24 2021-11-24 Inductance device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111402902.4A CN116168933A (en) 2021-11-24 2021-11-24 Inductance device

Publications (1)

Publication Number Publication Date
CN116168933A true CN116168933A (en) 2023-05-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111402902.4A Pending CN116168933A (en) 2021-11-24 2021-11-24 Inductance device

Country Status (1)

Country Link
CN (1) CN116168933A (en)

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