CN116161870A - Method for processing high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching - Google Patents
Method for processing high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching Download PDFInfo
- Publication number
- CN116161870A CN116161870A CN202310173795.5A CN202310173795A CN116161870A CN 116161870 A CN116161870 A CN 116161870A CN 202310173795 A CN202310173795 A CN 202310173795A CN 116161870 A CN116161870 A CN 116161870A
- Authority
- CN
- China
- Prior art keywords
- glass
- wet etching
- pulse
- glass substrate
- aspect ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 107
- 238000001039 wet etching Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 17
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 14
- 230000004048 modification Effects 0.000 claims abstract description 11
- 238000012986 modification Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 239000005350 fused silica glass Substances 0.000 claims description 8
- 238000011010 flushing procedure Methods 0.000 claims description 5
- 230000010287 polarization Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 description 9
- 239000003344 environmental pollutant Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 231100000719 pollutant Toxicity 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002090 nanochannel Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/04—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto specially adapted for plate glass, e.g. prior to manufacture of windshields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
- B08B7/026—Using sound waves
- B08B7/028—Using ultrasounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention discloses a method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching, and relates to the technical field of integrated circuit three-dimensional packaging. The method comprises the following steps: ultrasonic cleaning is carried out on glass by using acetone and isopropanol respectively; performing laser modification on the position of the preset glass through hole by using a plurality of picosecond pulse laser pulses; putting the glass into KOH solution for wet etching to a preset size; placing the wet etched glass into deionized water for ultrasonic cleaning; the size and the penetrability of the glass through hole are checked. The invention can obtain the high aspect ratio small aperture glass through hole with aperture more than or equal to 5 μm and aspect ratio less than or equal to 50 by combining picosecond laser with KOH solution.
Description
Technical Field
The invention relates to the technical field of integrated circuit three-dimensional packaging, in particular to a method for processing a high aspect ratio glass through hole by KOH wet etching assisted by multi-pulse picosecond laser.
Background
Compared with the traditional two-dimensional interconnection technology, the three-dimensional (3D) interconnection technology has the advantages of lower transmission loss, higher integration density, lower power dissipation, capability of realizing heterogeneous integration and the like. In the field of three-dimensional interconnection, conventional Through Silicon Via (TSV) interposer have various problems such as high electrical loss and high processing cost. To solve these problems, particularly in the Radio Frequency (RF) field, glass patch panels are considered to be superior alternatives to silicon patch panels, and the advantages of glass patch panels are mainly reflected in excellent electrical performance and low cost. Therefore, the present application is directed to how to perform via processing on a glass interposer to accommodate the high density I/O requirements of today's chip packages.
Disclosure of Invention
The invention aims to: aiming at the prior art, a method for processing a glass through hole with high depth-to-width ratio by KOH wet etching assisted by multi-pulse picosecond laser is provided, which is used for solving the problems of insufficient depth-to-width ratio and insufficient density of the through hole in the existing glass adapter plate processing, so that the glass through hole has smaller through holes and higher density, a device manufactured subsequently can have more excellent electrical properties, and a three-dimensional packaging structure based on the glass through hole has more complex interconnection structure and function in smaller size.
The technical scheme is as follows: a method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching comprises the following steps:
firstly, using a glass substrate as a base material, and respectively carrying out ultrasonic cleaning on the glass substrate by at least using acetone and isopropanol;
step two, laser modification is carried out at the position of the preset glass through hole by using a plurality of picosecond laser pulses;
step three, wet etching is carried out on the glass substrate by using KOH solution, and the through holes are etched to a preset size;
and step four, after the step three is completed, taking out the glass substrate, flushing and drying the glass substrate by using deionized water, and ultrasonically removing residues in the through holes by using the deionized water.
Further, in the second step, the duration of the picosecond laser is between 6 and 16ps, the pulse energy is between 30 and 140 mu J, the pulse interval is between 10 and 20ns, the polarization state is circularly polarized, and the spot diameter is less than or equal to 4 mu m.
Further, the thickness of the glass substrate in the first step is 500 μm or less.
Further, in step one, the ultrasonic cleaning time is greater than 15 minutes.
Further, in step three, the concentration of the KOH solution is between 32% and 48%; the wet etching temperature is 75-92 ℃ and the etching time is 90-600 minutes.
Further, in step four, the ultrasonic cleaning time is greater than 10 minutes.
Further, the glass substrate is made of fused quartz
The beneficial effects are that:
1. the invention creatively adopts a new technology combining multi-pulse picosecond laser and KOH solution etching to replace laser and HF etching in the traditional technology.
2. The invention can process the through hole array with high depth-to-width ratio on the glass, and increases the application breadth and depth of the glass adapter plate in the field of three-dimensional packaging.
Drawings
FIG. 1 is a schematic diagram of a method of picosecond laser assisted KOH wet etch processing high aspect ratio glass vias according to the present invention.
Fig. 2 is a graph of the continuous nanochannel generated in glass by a multipulse picosecond laser photographed by an electron microscope in accordance with the present invention.
FIG. 3 is a schematic diagram of a discontinuous nanostructure created in glass by a single pulse laser according to the present invention.
FIG. 4 shows a single pulse laser assisted HF etch of a significantly tapered TGV via in glass in accordance with the present invention.
Fig. 5 is a top view of a glass substrate before etching after laser modification in example 1 photographed by an optical microscope in the present invention.
Fig. 6 is a top view of a glass substrate wet etched using KOH solution in example 1 taken at 5 x magnification by an optical microscope in the present invention.
Fig. 7 is a top view of a glass substrate wet etched using KOH solution in example 1 taken at 50 x magnification by an optical microscope in the present invention.
Fig. 8 is a top view of a glass substrate wet etched using KOH solution in example 2 photographed by an electron microscope in accordance with the present invention.
Fig. 9 is a cross-sectional view of a glass substrate subjected to wet etching using a KOH solution in example 2 photographed by an electron microscope in the present invention.
Fig. 10 is a top view of a glass substrate wet etched using KOH solution in example 3 photographed by an optical microscope in accordance with the present invention.
FIG. 11 is a cross-sectional view of a glass substrate obtained by wet etching with KOH solution in example 3 photographed by an optical microscope in the present invention.
Detailed Description
The invention is further explained below with reference to the drawings.
In the prior art, a single pulse laser is used to generate irregular discontinuous nano-structures in glass, which can improve the contact area of the glass with an etchant and the chemical activity of the glass, and thus the etching rate along the laser direction is increased to a certain extent. The invention provides a method for assisting KOH wet etching by using multi-pulse picosecond laser based on a double-temperature model of the actions of ultra-short pulse laser and glass. The multipulse picosecond laser can stably generate continuous nano channels in glass, so that the etching rate of the HF solution and the KOH solution to the region is greatly increased, wherein the etching rate of the KOH solution is increased more obviously, and the final etching selectivity performance reaches more than 10 times that of the HF solution. In the prior method, the selectivity of HF solution etching assisted by single-pulse femtosecond laser is about 10 at the highest, and TGV through holes with depth-to-width ratio smaller than 10 and through hole taper smaller than 85 degrees can be processed only. The method of combining the multi-pulse picosecond laser and KOH etching can lead the etching selectivity to reach more than 500, and can also process TGV through holes with the depth-to-width ratio of 50 by considering actual processing factors, and the taper can reach about 89.9 degrees.
The invention can process high aspect ratio through hole arrays on glass, such as high aspect ratio (more than or equal to 40), small size (less than or equal to 8 μm), good appearance, good taper (more than or equal to 89.5 degrees) and high density (more than or equal to 20000 pieces/cm < 2 >).
According to the method, picosecond laser is combined with KOH solution, so that the high-aspect-ratio small-aperture glass through hole with the aperture being more than or equal to 5 mu m and the aspect ratio being less than or equal to 50 can be obtained, 20000 through holes can be processed on glass per square centimeter in actual processing, and the processing speed reaches 200/s.
In the present application, the spot diameter in fig. 2 is 2 μm, and the glass via diameters in fig. 2 to 8 are respectively: 22 μm (+ -2 μm), 12 μm (+ -1 μm), 12 μm, 5 μm (+ -1 μm).
Example 1
A method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching comprises the following steps:
step one: providing a fused quartz glass substrate, wherein the thickness of the substrate is 300 mu m, and respectively performing ultrasonic cleaning for 15min by using acetone and isopropanol, so that the influence of pollutants on laser processing is reduced;
step two: performing laser modification on the position of a preset glass through hole by using circularly polarized picosecond pulse laser with 1030nm wavelength, 6ps pulse width, 4 pulse number, 15.5ns pulse interval, 65 mu J pulse energy and 2 mu m light spot diameter, and increasing the wet etching selectivity of the region;
step three: wet etching the glass substrate for 480 minutes by using 32% KOH solution in water bath heating at 85 ℃ to etch the through holes to a preset size;
step four: and taking out the glass substrate, flushing and drying the glass substrate by using deionized water, and cleaning and removing glass residues in the through holes by using deionized water ultrasonic waves.
Example 2
A method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching comprises the following steps:
step one: providing a fused quartz glass substrate, wherein the thickness of the substrate is 300 mu m, and respectively performing ultrasonic cleaning for 15min by using acetone and isopropanol, so that the influence of pollutants on laser processing is reduced;
step two: performing laser modification on the position of a preset glass through hole by using circularly polarized picosecond pulse laser with 1030nm wavelength, 10ps pulse width, 4 pulse number, 15.5ns pulse interval, 65 mu J pulse energy and 2 mu m light spot diameter, and increasing the wet etching selectivity of the region;
step three: wet etching the glass substrate for 480 minutes by using 32% KOH solution in water bath heating at 80 ℃ to etch the through holes to a preset size;
step four: and taking out the glass substrate, flushing and drying the glass substrate by using deionized water, and cleaning and removing glass residues in the through holes by using deionized water ultrasonic waves.
Example 3
A method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching comprises the following steps:
step one: providing a fused quartz glass substrate, wherein the thickness of the substrate is 360 mu m, and respectively performing ultrasonic cleaning for 15min by using acetone and isopropanol, so that the influence of pollutants on laser processing is reduced;
step two: performing laser modification on the position of a preset glass through hole by using circularly polarized picosecond pulse laser with 1030nm wavelength, 6ps pulse width, 4 pulse number, 15.5ns pulse interval, 65 mu J pulse energy and 2 mu m light spot diameter, and increasing the wet etching selectivity of the region;
step three: wet etching the glass substrate by using 32% KOH solution for 60 minutes in water bath heating at 85 ℃ to etch the through holes to a preset size;
step four: and taking out the glass substrate, flushing and drying the glass substrate by using deionized water, and cleaning and removing glass residues in the through holes by using deionized water ultrasonic waves.
Example 4
A method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching comprises the following steps:
step one: providing a fused quartz glass substrate, wherein the thickness of the glass substrate is 260 mu m, and respectively performing ultrasonic cleaning for 15min by using acetone and isopropanol, so that the influence of pollutants on laser processing is reduced;
step two: performing laser modification on the position of a preset glass through hole by using circularly polarized picosecond pulse laser with 1030nm wavelength, 10ps pulse width, 4 pulse number, 65 mu J pulse energy and 3 mu m light spot diameter, and increasing the wet etching selectivity of the region;
step three: wet etching the glass substrate by using 36% KOH solution for 30 minutes in water bath heating at 90 ℃ to etch the through holes to a preset size;
step four: and taking out the glass substrate, washing and drying the glass substrate by using deionized water, and then cleaning and removing glass residues in the through holes by using deionized water ultrasonic waves, wherein the cleaning time is longer than 10 minutes, and finishing the processing.
Example 5
A method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching comprises the following steps:
step one: providing a fused quartz glass substrate, wherein the thickness of the glass substrate is 440 mu m, and respectively performing ultrasonic cleaning for 20min by using acetone and isopropanol, so that the influence of pollutants on laser processing is reduced;
step two: performing laser modification on the position of a preset glass through hole by using circularly polarized picosecond pulse laser with the wavelength of 1064nm, the pulse width of 16ps, the pulse number of 4, the pulse energy of 140 mu J and the light spot diameter of 4 mu m, and increasing the wet etching selectivity of the region;
step three: wet etching the glass substrate with 48% KOH solution in water bath heating at 80 ℃ for 440 minutes to etch the through holes to a predetermined size;
step four: and taking out the glass substrate, washing and drying the glass substrate by using deionized water, and then cleaning and removing glass residues in the through holes by using deionized water ultrasonic waves, wherein the cleaning time is longer than 10 minutes, and finishing the processing.
Example 6
A method for processing a high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching comprises the following steps:
step one: providing a fused quartz glass substrate, wherein the thickness of the glass substrate is 440 mu m, and respectively performing ultrasonic cleaning for 30min by using acetone and isopropanol, so that the influence of pollutants on laser processing is reduced;
step two: performing laser modification on the position of a preset glass through hole by using circularly polarized picosecond pulse laser with 1030nm wavelength, 8ps pulse width, 6 pulse number, 35 mu J pulse energy and 2 mu m light spot diameter, and increasing the wet etching selectivity of the region;
step three: wet etching the glass substrate for 600 minutes by using 36% KOH solution in water bath heating at 93 ℃ to etch the through holes to a preset size;
step four: and taking out the glass substrate, washing and drying the glass substrate by using deionized water, and then cleaning and removing glass residues in the through holes by using deionized water ultrasonic waves, wherein the cleaning time is longer than 10 minutes, and finishing the processing.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (7)
1. The method for processing the high-aspect-ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching is characterized by comprising the following steps of:
firstly, using a glass substrate as a base material, and respectively carrying out ultrasonic cleaning on the glass substrate by at least using acetone and isopropanol;
step two, laser modification is carried out at the position of the preset glass through hole by using a plurality of picosecond laser pulses;
step three, wet etching is carried out on the glass substrate by using KOH solution, and the through holes are etched to a preset size;
and step four, after the step three is completed, taking out the glass substrate, flushing and drying the glass substrate by using deionized water, and ultrasonically removing residues in the through holes by using the deionized water.
2. The method for processing high aspect ratio glass through holes by multi-pulse picosecond laser assisted KOH wet etching according to claim 1, wherein in the second step, the duration of the picosecond laser is between 6 and 16ps, the pulse energy is between 30 and 140 muJ, the pulse interval is between 10 and 20ns, the polarization state is circular polarization, and the spot diameter is less than or equal to 4 μm.
3. The method of claim 1, wherein the glass substrate in step one has a thickness of 500 μm or less.
4. A method of multi-pulse picosecond laser assisted KOH wet etching for processing high aspect ratio glass through-holes as defined in claim 1 wherein in step one the ultrasonic cleaning time is greater than 15 minutes.
5. A method of multi-pulse picosecond laser assisted KOH wet etching high aspect ratio glass via according to claim 1 wherein in step three, the concentration of KOH solution is between 32% and 48%; the wet etching temperature is 75-92 ℃ and the etching time is 90-600 minutes.
6. A method of multi-pulse picosecond laser assisted KOH wet etching for high aspect ratio glass via according to claim 1 wherein in step four, the ultrasonic cleaning time is greater than 10 minutes.
7. The method for processing high aspect ratio glass through holes by multi-pulse picosecond laser assisted KOH wet etching according to claim 1, wherein the glass substrate is made of fused quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310173795.5A CN116161870A (en) | 2023-02-28 | 2023-02-28 | Method for processing high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310173795.5A CN116161870A (en) | 2023-02-28 | 2023-02-28 | Method for processing high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116161870A true CN116161870A (en) | 2023-05-26 |
Family
ID=86418067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310173795.5A Pending CN116161870A (en) | 2023-02-28 | 2023-02-28 | Method for processing high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116161870A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140231390A1 (en) * | 2011-11-04 | 2014-08-21 | Fujikura Ltd. | Method of manufacturing substrate including micro hole |
| CN107531564A (en) * | 2015-02-27 | 2018-01-02 | 康宁股份有限公司 | By laser damage and it is etched in the product that the method for passage is manufactured in glassware and is thus manufactured |
| CN109551123A (en) * | 2018-12-17 | 2019-04-02 | 华东师范大学 | The method that picosecond laser induces inside quartz glass crackle to realize micro-fluidic device preparation |
| US20200354262A1 (en) * | 2019-05-10 | 2020-11-12 | Corning Incorporated | High silicate glass articles possessing through glass vias and methods of making and using thereof |
| CN112864026A (en) * | 2021-03-23 | 2021-05-28 | 成都迈科科技有限公司 | Process for processing TGV through hole by combining laser and HF wet etching |
| CN113860753A (en) * | 2021-09-29 | 2021-12-31 | 维达力实业（赤壁）有限公司 | Glass hole opening method |
-
2023
- 2023-02-28 CN CN202310173795.5A patent/CN116161870A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140231390A1 (en) * | 2011-11-04 | 2014-08-21 | Fujikura Ltd. | Method of manufacturing substrate including micro hole |
| CN107531564A (en) * | 2015-02-27 | 2018-01-02 | 康宁股份有限公司 | By laser damage and it is etched in the product that the method for passage is manufactured in glassware and is thus manufactured |
| CN109551123A (en) * | 2018-12-17 | 2019-04-02 | 华东师范大学 | The method that picosecond laser induces inside quartz glass crackle to realize micro-fluidic device preparation |
| US20200354262A1 (en) * | 2019-05-10 | 2020-11-12 | Corning Incorporated | High silicate glass articles possessing through glass vias and methods of making and using thereof |
| CN112864026A (en) * | 2021-03-23 | 2021-05-28 | 成都迈科科技有限公司 | Process for processing TGV through hole by combining laser and HF wet etching |
| CN113860753A (en) * | 2021-09-29 | 2021-12-31 | 维达力实业（赤壁）有限公司 | Glass hole opening method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102214481B1 (en) | Methods for forming vias in glass substrates | |
| TWI761355B (en) | Inorganic wafer having through-holes attached to semiconductor wafer | |
| TWI616939B (en) | Verfahren zum einbringen mindestens einer ausnehmung oder einer durchbrechung in ein plattenfoermiges werkstueck | |
| JP2015501531A (en) | Substrate including opening and method of forming the same | |
| JPWO2011096353A1 (en) | Fine structure forming method and substrate having fine structure | |
| JP2019512875A (en) | Hybrid wafer dicing approach using split beam laser scribing and plasma etching processes | |
| WO2014011373A1 (en) | Uniform masking for wafer dicing using laser and plasma etch | |
| CN115666003B (en) | Circuit board blind slot manufacturing method and system | |
| TW202025265A (en) | Wafer dicing using hybrid laser and plasma etch approach with intermediate breakthrough treatment | |
| WO2015041851A1 (en) | Alternating masking and laser scribing approach for wafer dicing using laser scribing and plasma etch | |
| KR20130098167A (en) | Method for manufacturing light-absorbing substrate and method for manufacturing die for manufacturing light-absorbing substrate | |
| Bhaskar et al. | Large-area femtosecond laser milling of silicon employing trench analysis | |
| CN116161870A (en) | Method for processing high aspect ratio glass through hole by multi-pulse picosecond laser assisted KOH wet etching | |
| US9105710B2 (en) | Wafer dicing method for improving die packaging quality | |
| CN114560634A (en) | Method for processing special-shaped glass through hole | |
| TWI725364B (en) | Transparent substrate with holes and manufacturing method thereof | |
| Toftness et al. | Laser technology for wafer dicing and microvia drilling for next generation wafers | |
| Luong et al. | Machining on Rear Surface of a Silicon Substrate by an Infrared Femtosecond Laser via Non-linear Absorption Processes | |
| TW201508835A (en) | Etchant for through-silicon-vias on wafer and process for etching through-silicon-vias on wafer | |
| TWI698401B (en) | Method for manufacturing perforation of glass substrate | |
| JP2013251456A (en) | Semiconductor device manufacturing method and semiconductor device | |
| JP2019116395A (en) | Formation method of recess or open hole, formation method of electrode | |
| CN117832169A (en) | Preparation device and method for glass micropores | |
| TW202224828A (en) | Method for forming through holes of substrate capable of reducing time required for etching through holes by simultaneously etching pre-through holes | |
| Tang et al. | Enhancement of through silicon via sidewall quality by nanosecond laser pulses with chemical etching process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |