CN116153826A - Load lock apparatus for chemical vapor deposition apparatus - Google Patents

Load lock apparatus for chemical vapor deposition apparatus Download PDF

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Publication number
CN116153826A
CN116153826A CN202310436947.6A CN202310436947A CN116153826A CN 116153826 A CN116153826 A CN 116153826A CN 202310436947 A CN202310436947 A CN 202310436947A CN 116153826 A CN116153826 A CN 116153826A
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Prior art keywords
cold
chamber
air inlet
heat
vortex
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Granted
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CN202310436947.6A
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CN116153826B (en
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蔡军
宋维聪
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Shanghai Betone Semiconductor Energy Technology Co ltd
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Shanghai Betone Semiconductor Energy Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L59/00—Thermal insulation in general
    • F16L59/02—Shape or form of insulating materials, with or without coverings integral with the insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a load lock apparatus for a chemical vapor deposition apparatus, comprising: the device comprises a load locking main body, a heat insulating plate, a vortex generating assembly and an upper air inlet device and a lower air inlet device, wherein the load locking main body comprises an upper cavity and a lower cavity which are arranged at intervals, and a first wafer bracket and a second wafer bracket are respectively arranged in the upper cavity and the lower cavity; the heat insulation plate is arranged between the upper layer chamber and the lower layer chamber; the vortex generating assembly comprises a vortex generating body, an air inlet end and an air outlet end; the vortex generating body is internally provided with a vortex chamber, and an inert gas source enters the vortex chamber through the gas inlet end to form high-temperature and low-temperature gas flow; the low-temperature air flows out from the cold end and the high-temperature air flows out from the hot end; the upper air inlet device is communicated with the upper chamber, and the input end of the upper air inlet device is connected with the hot end or the cold end; the lower air inlet device is communicated with the lower chamber, and the input end is connected with the hot end or the cold end. According to the invention, only one vortex generating assembly is needed to realize heating or cooling, so that the use of electric heating is reduced, the use of refrigerating fluid is reduced, and the energy-saving and environment-friendly effects are realized.

Description

Load lock apparatus for chemical vapor deposition apparatus
Technical Field
The invention belongs to the technical field of semiconductor equipment, and particularly relates to load locking equipment for chemical vapor deposition equipment.
Background
In the manufacturing process of semiconductor devices, wafers are generally subjected to a specific process in a vacuum environment using various vacuum process chambers, such as chemical vapor deposition, and the wafers are transferred from the outside to the vacuum process chambers, usually by providing a load lock apparatus for switching the internal pressure between an atmospheric pressure state and a vacuum state. The general placement mode of the load locking device is that the front end module device is connected to the wafer transmission cavity in front, the wafer transmission cavity is connected to the back, in order to maximize the productivity in the present stage, the overall device generally adopts an upper and lower double-cavity layout mode, because the front end module device is an atmospheric pressure side, the wafer transmission cavity is a vacuum side, an atmospheric pressure robot arm in the front end module device transmits the wafer to the wafer transmission cavity, rectangular gate valves are arranged in front and back of the wafer transmission cavity, when the pressures of the load locking device and the wafer transmission cavity are balanced, the load locking device controls the two side switches of the rectangular gate valves, the wafer to be preheated and removed or the wafer to be cooled is transmitted to a double-arm vacuum robot in the wafer transmission cavity, and the double-arm vacuum robot transmits the wafer to a corresponding process cavity according to the process requirement; in addition, when the wafer process in the process chamber is finished, the double-arm vacuum robot transmits the wafer to the load lock device for cooling, and the cooled wafer is transmitted to the wafer box by the atmospheric robot in the front-end module device.
The patent CN107534001a provides a layout of a load-locking chamber, which adopts a functional layout that an upper layer and a lower layer are both cooling and sheet transferring, the cooling of the upper chamber and the cooling of the lower chamber are not interfered with each other, the wafer temperatures of the upper chamber and the lower chamber are convenient to be controlled respectively, and the upper chamber and the lower chamber are protected from atmosphere and balanced from air pressure when the process is carried out by introducing an inert gas source into the upper diffuser and the lower diffuser respectively.
The prior art also provides load locking equipment, which adopts a load locking chamber with heating and cooling functions, wherein the lower chamber is a heating chamber, the upper chamber is a cooling chamber, the lower chamber is subjected to preheating treatment to remove water vapor on the surface of a wafer, meanwhile, the wafer is prevented from being suddenly heated and deformed during the subsequent process, and the processed wafer in the lower chamber is transferred into a process chamber through a wafer transfer chamber for corresponding process treatment; after the process is finished, the wafer transmission cavity transmits the wafer in the process cavity back to the upper layer cavity again, and the wafer is cooled in the upper layer cavity and then transmitted back to the front end module equipment. However, in the load locking device of the present stage, the upper chamber is cooled by introducing an inert gas source into the upper chamber through the upper diffuser, and the cooling efficiency is generally low; the lower chamber adopts a heater to realize a preheating treatment process, and meanwhile, a hot water source (65-80 ℃) is communicated in the chamber to realize heat preservation of the lower chamber, the source of heat of the lower chamber is mainly the heater, and the chamber is communicated with the hot water source to realize heat preservation, but the energy consumption is too high, so that the energy conservation and the environmental protection are not facilitated.
Accordingly, there is a need to provide an improved solution to the above-mentioned deficiencies of the prior art.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a load lock device for a chemical vapor deposition apparatus, which is used for solving the problems of low efficiency, excessive energy consumption and adverse energy saving and environmental protection of the load lock device in the prior art when implementing a cooling or preheating treatment process.
To achieve the above and other related objects, the present invention provides a load lock apparatus for a chemical vapor deposition apparatus, comprising:
the load locking device comprises a load locking main body, a first wafer support and a second wafer support, wherein the load locking main body comprises an upper layer chamber and a lower layer chamber which are arranged at intervals, the upper layer chamber is internally provided with the first wafer support, the lower layer chamber is internally provided with the second wafer support, and the first wafer support and the second wafer support are used for bearing wafers;
the heat insulation plate is arranged between the upper cavity and the lower cavity;
the vortex generating assembly is arranged on the load locking main body and penetrates through the upper end and the lower end of the load locking main body, and comprises a vortex generating body, an air inlet end and an air outlet end; the inside of the vortex generating body is provided with a vortex chamber, the input end of the air inlet end is connected with an inert air source, the output end of the air inlet end is communicated with the vortex chamber, and the inert air source enters the vortex chamber through the air inlet end to generate vortex so as to form high-temperature air flow and low-temperature air flow; the air outlet end comprises a cold end and a hot end, and the low-temperature air flows out from the cold end and is used for providing a cold source; the high-temperature air flows out of the hot end and is used for providing a heat source;
The upper air inlet device is communicated with the upper chamber, and the input end of the upper air inlet device is connected with the hot end or the cold end;
the lower air inlet device is communicated with the lower-layer cavity, and the input end of the lower air inlet device is connected with the hot end or the cold end.
Preferably, the heat insulation plate is made of stainless steel or titanium alloy, and the thickness of the heat insulation plate is 5 mm-10 mm.
Preferably, an inert gas chamber is further arranged between the inert gas source and the gas inlet end, the gas inlet end is located in the inert gas chamber, the gas inlet end comprises a plurality of vortex gas inlets, the vortex gas inlets are uniformly formed along the circumference of the same plane of the vortex generating body, and each vortex gas inlet penetrates through the inner wall and the outer wall of the vortex generating body and is communicated with the vortex chamber. The inert gas provided by the inert gas source is compressed high-pressure gas, the pressure value of the inert gas can meet the requirement of the CVD process, and the pressure value of the inert gas provided by the inert gas source is usually 0.3-1 MPa.
Preferably, the hot end comprises a heat flow control unit, the heat flow control unit comprises a base and a conical table positioned above the base, the outer wall of the base is in threaded connection with the load locking main body, a heat flow air passage and a hot end port are formed in the base, and the heat flow air passage is communicated with the hot end port;
At least part of the conical table is sleeved in the vortex chamber, a heat flow control gap is formed between the conical surface of the circumferential direction of the conical table and the inner wall of the vortex chamber, and high-temperature air flows out of the heat flow control gap and passes through the heat flow air passage to enter the hot end opening.
Preferably, the cold end is provided with a cold port, the input end of the cold port is communicated with the vortex chamber, the output end of the cold port penetrates through the top end of the vortex generator, and the caliber of the cold port is smaller than that of the hot port.
Preferably, when the input end of the upper air inlet device is connected with the cold end and the input end of the lower air inlet device is connected with the hot end, a second heating device is further arranged in the lower chamber, and the second heating device is one or a combination of a heating component and a heat transfer component;
the heating assembly is a heater, and at least part of the heater is positioned in the lower-layer chamber and is used for heating the lower-layer chamber;
the heat transfer component is a hot plate or a second air inlet device; the hot plate is positioned below the second wafer support, the bottom end of the hot plate is connected with the hot end through a heat flow channel, and high-temperature air flow flowing out of the hot end is transmitted to the hot plate through the heat flow channel; the second air inlet device is communicated with the lower-layer cavity, the input end of the second air inlet device is connected with the hot end, and high-temperature air flow flowing out of the hot end provides a heat source for the lower-layer cavity through the second air inlet device.
Preferably, the heat plate is a diffusion type heat plate, the diffusion type heat plate is formed by sintering metal with high porous heat conductivity coefficient, a plurality of heat through holes are formed in the diffusion type heat plate, and the size of the heat through holes is 1 nm-100 mu m.
Preferably, when the input end of the upper air inlet device and the input end of the lower air inlet device are connected with the cold end, a third air inlet device is further arranged in the lower chamber in a communicating manner, the input end of the third air inlet device is connected with the cold end, and the low-temperature air flow flowing out of the cold end enters the lower chamber through the third air inlet device.
Preferably, a cold tray is arranged in the upper chamber, the cold tray is located below the wafer carried by the first wafer support, the bottom end of the cold tray is connected with the cold end through a cold flow channel, and low-temperature air flow flowing out of the cold end is transmitted to the cold tray through the cold flow channel.
Preferably, the cold disc is a diffusion type cold disc, the diffusion type cold disc is formed by sintering metal with high porous heat conductivity coefficient, a plurality of cold through holes are formed in the diffusion type cold disc, and the size of the cold through holes is 1 nm-100 mu m.
As described above, the load lock apparatus for a chemical vapor deposition apparatus of the present invention has the following advantageous effects:
the load locking device comprises a load locking main body, a heat insulation plate, a vortex generating assembly, an upper air inlet device and a lower air inlet device, wherein the load locking main body comprises an upper layer chamber and a lower layer chamber which are arranged at intervals, a first wafer support is arranged in the upper layer chamber, a second wafer support is arranged in the lower layer chamber, and a plurality of first wafer supports and a plurality of second wafer supports can be arranged in the lower layer chamber, so that a plurality of wafers can be processed in one chamber at the same time, and the production efficiency of the wafers is greatly improved; the heat insulation plate is arranged between the upper chamber and the lower chamber, and can fully and effectively insulate heat between the upper chamber and the lower chamber, so that the processes between the upper chamber and the lower chamber are not affected, the method is simple, and the energy is saved; the vortex generating assembly comprises a vortex generating body, an air inlet end and an air outlet end, a vortex chamber is arranged in the vortex generating body, an inert air source is introduced into the vortex chamber through the air inlet end, high-temperature air flow and low-temperature air flow are rapidly generated in a short time, the high-temperature air flow provides a heat source for an upper-layer chamber or a lower-layer chamber through a hot end, and the low-temperature air flow provides a cold source for the upper-layer chamber or the lower-layer chamber through a cold end, so that the cooling and heating time is shortened, and the production efficiency of wafers is greatly improved; in addition, the invention can realize heating or cooling by only one vortex generating component, thereby reducing the use of electric heating, reducing the use of refrigerating fluid, saving energy and protecting environment.
Drawings
Fig. 1 is a schematic diagram of a load lock apparatus according to the prior art.
Fig. 2 is a schematic diagram showing the structure of a load lock apparatus according to embodiment 1 of the present invention.
Fig. 3 is a schematic diagram showing the structure of a load lock apparatus according to embodiment 2 of the present invention.
Fig. 4 is a schematic diagram showing the structure of a load lock apparatus in embodiment 3 of the present invention.
FIG. 5 is a schematic cross-sectional view of a vortex generating assembly in accordance with an embodiment of the present invention.
Fig. 6 is a schematic view showing a structure of a vortex generating assembly according to an embodiment of the present invention.
FIG. 7 is a schematic diagram showing the cross-sectional structure of FIG. 6 along L-L.
Reference numerals
1. A load lock body; 10. an upper chamber; 11. a first wafer support; 12. a first lifting mechanism; 13. an upper air intake device; 14. a first balancing valve; 20. a lower chamber; 21. a second wafer support; 22. a second lifting mechanism; 23. a lower air inlet device; 24. a second vacuum gauge assembly; 25. a heating unit; 30. a vacuum pump; 31. a first bleed duct; 311. a first control valve; 32. a second bleed duct; 321. a second control valve; 40. an inert gas source; 401. an inert gas chamber; 50. a hot water source; 600. a heat insulating plate; 700. a vortex generating assembly; 701. a vortex generator; 7011. a vortex chamber; 702. a vortex air inlet; 703. a cold end; 7031. a cold port; 70311. a cold end joint; 70312. a cold pipe; 70313. a cold insulation pipe; 704. a hot end; 7041. a base station; 7042. a conical table; 7043. a hot flow air passage; 7044. a thermal port; 70441. a hot end joint; 70442. a heat pipe; 70443. a thermal insulation tube; 705. a heat flow control gap; 801. a hot plate; 8011. a heat flow channel; 802. a heating assembly; 803. a third air intake device; 901. a cold plate; 9011. cold flow channel.
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present invention, which is described by the following specific examples.
Please refer to fig. 1 to 7. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that it can be practiced, since modifications, changes in the proportions, or otherwise, used in the practice of the invention, are not intended to be critical to the essential characteristics of the invention, but are intended to fall within the spirit and scope of the invention. Also, the terms such as "upper," "lower," "left," "right," "middle," and "a" and the like recited in the present specification are merely for descriptive purposes and are not intended to limit the scope of the invention, but are intended to provide relative positional changes or modifications without materially altering the technical context in which the invention may be practiced.
Referring to fig. 1, a schematic structural diagram of a load lock apparatus in the prior art is shown, the load lock apparatus includes a load lock main body 1, an upper air inlet device 13 and a lower air inlet device 23, the load lock main body 1 includes an upper chamber 10 and a lower chamber 20 which are disposed at intervals, a first wafer support 11 is disposed in the upper chamber 10, a second wafer support 21 is disposed in the lower chamber 20, the first wafer support 11 and the second wafer support 21 are both used for carrying a wafer, the first wafer support 11 is further connected with a first lifting mechanism 12, the first lifting mechanism 12 is used for controlling lifting of the first wafer support 11, the second wafer support 21 is connected with a second lifting mechanism 22, and the second lifting mechanism 22 is used for controlling lifting of the second wafer support 21, but specific structures of the first lifting mechanism 12 and the second lifting mechanism 22 are not limited herein, and generally known to those skilled in the art are adopted; the upper air inlet device 13 is arranged right above the upper chamber 10, the output end of the upper air inlet device 13 is communicated with the upper chamber 10, the lower air inlet device 23 is arranged on the side surface of the lower chamber 20, and the output end of the lower air inlet device 23 is communicated with the lower chamber 20.
The load lock apparatus shown in fig. 1 further includes a vacuum pump 30, the vacuum pump 30 is communicated with the upper chamber 10 through a first pumping pipe 31, a first control valve 311 is disposed on the first pumping pipe 31, the vacuum pump 30 is communicated with the lower chamber 20 through a second pumping pipe 32, and a second control valve 321 is disposed on the second pumping pipe 32; meanwhile, the upper chamber 10 is further provided with a first balance valve 14 and a first vacuum gauge assembly (not shown in the figure), and the lower chamber 20 is provided with a second balance valve (not shown in the figure) and a second vacuum gauge assembly 24; in addition, the upper chamber 10 has an upper opening and closing assembly (not shown) for transferring the wafer, and the lower chamber 20 has a lower opening and closing assembly (not shown) for transferring the wafer, and the specific structures of the upper opening and closing assembly and the lower opening and closing assembly are not limited herein, and can satisfy practical applications.
In the load lock device shown in fig. 1, the upper chamber 10 is a cooling chamber, the lower chamber 20 is a heating chamber, and an inert gas source 40 is introduced into the upper chamber 10 through an upper gas inlet device 13 to realize cooling of the wafer in the upper chamber 10; the inert gas source 40 is led into the lower chamber 20 through the lower gas inlet device 23, and the hot water source 50 is continuously led into the load locking main body 1 to realize the heat preservation of the lower chamber 20, meanwhile, the heating unit 25 is installed in the lower chamber 20, the heat dissipation end of the heating unit 25 is in a flat plate shape and is positioned below the second wafer support 21, the heating unit 25 heats the wafer in the lower chamber 20, namely, the heating unit 25 heats the heat source of the lower chamber 20, and the cavity is led into the hot water source 50 to realize the heat preservation as an auxiliary material, but the energy consumption is too high, so that the energy conservation and the environmental protection are not facilitated.
In order to solve the problems of low efficiency and high energy consumption when the load locking equipment realizes a cooling or preheating treatment process in the prior art, which is unfavorable for energy conservation and environmental protection, referring to fig. 2 to 7, the invention provides the load locking equipment for the chemical vapor deposition equipment, which comprises the following components: the load lock comprises a load lock body 1, a heat insulation plate 600, a vortex generating assembly 700, an upper air inlet device 13 and a lower air inlet device 23, wherein the load lock body 1 comprises an upper chamber 10 and a lower chamber 20 which are arranged at intervals, a first wafer support 11 is arranged in the upper chamber 10, a second wafer support 21 is arranged in the lower chamber 20, and the first wafer support 11 and the second wafer support 21 are used for bearing wafers; the heat insulating plate 600 is disposed between the upper chamber 10 and the lower chamber 20; the vortex generating assembly 700 is mounted on the load lock body 1 and penetrates through the upper end and the lower end of the load lock body 1, and the vortex generating assembly 700 comprises a vortex generating body 701, an air inlet end and an air outlet end; the vortex generating body 701 is internally provided with a vortex chamber 7011, the input end of the air inlet end is connected with an inert air source 40, the output end of the air inlet end is communicated with the vortex chamber 7011, and the inert air source 40 enters the vortex chamber 7011 through the air inlet end to generate vortex so as to form high-temperature air flow and low-temperature air flow; the air outlet end comprises a cold end 703 and a hot end 704, and the low-temperature air flows out from the cold end 703 and is used for providing a cold source; the high temperature gas stream flows from hot end 704 and is used to provide a heat source; the upper air inlet device 13 is arranged in the upper chamber 10, the output end of the upper air inlet device 13 is communicated with the upper chamber 10, and the input end of the upper air inlet device 13 is connected with the hot end 704 or the cold end 703; the lower air inlet device 23 is installed in the lower chamber 20, and the output end of the lower air inlet device 23 is communicated with the lower chamber 20, and the input end of the lower air inlet device 23 is connected with the hot end 704 or the cold end 703.
Specifically, the load lock apparatus of the present invention has the same structure as the load lock apparatus of the related art presented in fig. 1, and includes: the first wafer bracket 11 is connected with a first lifting mechanism 12, and the second wafer bracket 21 is connected with a second lifting mechanism 22; the vacuum pump 30 is communicated with the upper chamber 10 through a first air extraction pipeline 31, a first control valve 311 is arranged on the first air extraction pipeline 31, the vacuum pump 30 is communicated with the lower chamber 20 through a second air extraction pipeline 32, and a second control valve 321 is arranged on the second air extraction pipeline 32; meanwhile, the upper chamber 10 is further provided with a first balance valve 14 and a first vacuum gauge assembly (not shown in the figure), and the lower chamber 20 is provided with a second balance valve (not shown in the figure) and a second vacuum gauge assembly 24; in addition, the upper chamber 10 has an upper opening and closing member (not shown) for transferring the wafer, and the lower chamber 20 has a lower opening and closing member (not shown) for transferring the wafer; and will not be described in detail herein.
Specifically, in the embodiment of the present invention, a plurality of first wafer supports 11 and second wafer supports 21 may be provided, that is, the upper chamber 10 or the lower chamber 20 may process a plurality of wafers at the same time, so that the production efficiency of the wafers is greatly improved; the heat insulation plate 600 is arranged between the upper chamber 10 and the lower chamber 20, and the heat insulation plate 600 can fully and effectively insulate the upper chamber 10 from the lower chamber 20, so that the processes between the upper chamber 10 and the lower chamber 20 are not affected, the method is simple, and the energy is saved; in addition, in the embodiment of the invention, heating or cooling can be realized by only one vortex generating assembly 700, the inert gas source 40 is introduced into the vortex chamber 7011 through the gas inlet end, high-temperature gas flow and low-temperature gas flow are rapidly generated in a short time, the high-temperature gas flow provides a heat source for the upper chamber 10 or the lower chamber 20 through the hot end 704, the low-temperature gas flow provides a cold source for the upper chamber 10 or the lower chamber 20 through the cold end 703, the cooling and heating time is shortened, the production efficiency of wafers is greatly improved, the use of electric heating is reduced, the use of refrigerating fluid is reduced, and the device is energy-saving and environment-friendly.
Specifically, in the embodiment of the present invention, the upper air inlet device 13 and the lower air inlet device 23 are preferably diffusers, and the diffusers have a plurality of interconnected micropores, so that when high-temperature air flow or low-temperature air flow enters the upper chamber 10 or the lower chamber 20 through the diffusers, the air flow passes through the micropores of the diffusers, so that large impact is not caused to wafers or other parts, and the particle generation amount is greatly reduced; while also preventing the introduction of new particles from inert gas source 40.
As an example, the heat insulation plate 600 is made of stainless steel or titanium alloy, and the thickness of the heat insulation plate 600 is 5 mm-10 mm.
Specifically, the heat insulation board 600 is made of a material with a low thermal conductivity coefficient, and can sufficiently and effectively insulate the upper chamber 10 from the lower chamber 20, so that the processes between the upper chamber 10 and the lower chamber 20 are not affected by each other, and the thickness of the heat insulation board 600 can include any value in the range of 5mm, 6 mm, 7 mm, 8 mm, 9 mm, 10mm, etc., and can be specifically adjusted according to practical use.
As an example, an inert gas chamber 401 is further disposed between the inert gas source 40 and the gas inlet end, the gas inlet end is located in the inert gas chamber 401, the gas inlet end includes a plurality of vortex gas inlets 702, the plurality of vortex gas inlets 702 are uniformly formed along the circumference of the same plane of the vortex generator 701, and each vortex gas inlet 702 penetrates through the inner wall and the outer wall of the vortex generator 701 and is communicated with the vortex chamber 7011.
Specifically, referring to fig. 6 and 7, a plurality of vortex air inlets 702 are all located on the same circumferential surface, the input ends of the vortex air inlets 702 are communicated with the inert gas chamber 401, the output ends of the vortex air inlets 702 are communicated with the vortex chamber 7011, the inert gas source 40 is firstly introduced into the inert gas chamber 401, and the inert gas source 40 in the inert gas chamber 401 enters the vortex chamber 7011 through the vortex air inlets 702 to generate high tangential velocity, so that high-speed rotational flow is formed.
In addition, the inert gas provided by the inert gas source is compressed high-pressure gas, the pressure value of the inert gas can meet the requirement of the CVD process, and the pressure value of the inert gas provided by the inert gas source is generally 0.3-1 Mpa (such as values in the range of 0.3 Mpa, 0.4 Mpa, 0.5 Mpa, 0.6 Mpa, 0.7 Mpa, 0.8 Mpa, 0.9 Mpa, 1.0 Mpa and the like, and the inert gas can be specifically adjusted according to the actual situation).
Preferably, the vortex air inlet holes 702 are arranged obliquely between the vortex generating body 701 and the vortex chamber 7011, i.e. the angle between the air inlet direction of the vortex air inlet holes 702 and the tangential direction of the circumference of the vortex air inlet holes 702 is not 90 °.
As an example, the hot end 704 includes a heat flow control unit, the heat flow control unit includes a base 7041 and a conical table 7042 located above the base 7041, an outer wall of the base 7041 is in threaded connection with the load locking main body 1, a heat flow air passage 7043 and a hot end port 7044 are provided on the base 7041, and the heat flow air passage 7043 is communicated with the hot end port 7044; at least part of the conical table 7042 is sleeved in the vortex chamber 7011, a heat flow control gap 705 is formed between the conical surface of the periphery of the conical table 7042 and the inner wall of the vortex chamber 7011, and high-temperature air flows out of the heat flow control gap 705 and enters the hot end opening 7044 through the heat flow air passage 7043.
Specifically, referring to fig. 5 and 6, since the outer wall of the base 7041 is in threaded connection with the load lock body 1, the height of the taper-shaped base 7042 in the vortex chamber 7011 is adjusted by screwing the base 7041, so that the size of the heat flow control gap 705 is adjusted, and the ratio of low-temperature air flow to high-temperature air flow is controlled, thereby achieving the purpose of controlling the cold-hot temperature; in the embodiment of the present invention, the ratio of the low temperature gas flow and the high temperature gas flow is not particularly limited, but when the low temperature gas flow is used as a cold source to cool the wafer, the temperature of the low temperature gas flow is usually not lower than 10 ℃ in order to prevent condensation from occurring due to too low temperature of the low temperature gas flow.
As an example, the cold end 703 is provided with a cold port 7031, an input end of the cold port 7031 is communicated with the vortex chamber 7011, an output end of the cold port 7031 penetrates through the top end of the vortex generator 701, and a diameter of the cold port 7031 is smaller than a diameter of the hot port 7044.
Specifically, when the inert gas source 40 is introduced through the inert gas chamber 401, a very high tangential velocity is generated when the inert gas source enters the vortex chamber 7011 through the vortex gas inlet 702, a high-speed rotational flow is formed, meanwhile, due to the small diameter of the cold port 7031, the high-speed rotational flow is blocked at the cold port 7031, the high-speed rotational flow flows to the hot end 704 along the axial direction of the vortex generating body 701 while rotating, in the process, a low-temperature gas flow and a high-temperature gas flow with different masses and a certain temperature difference are separated, and the low-temperature gas flow flows back and flows out through the cold port 7031, and the high-temperature gas flow flows out of a heat flow control unit of the hot end 704; in addition, the cold end 7031 preferably has a diameter of 2mm to 5mm (2 mm, 3 mm, 4 mm, 5mm, etc.).
Specifically, referring to fig. 5 and 6, the output end of the cold end port 7031 is connected with a cold pipe 70312 through a cold end connector 70311, and the periphery of the cold pipe 70312 is wrapped with a cold insulation pipe 70313; the output end of the hot end port 7044 is connected with a heat pipe 70442 through a hot end connector 70441, and the periphery of the heat pipe 70442 is wrapped with a heat insulation pipe 70443.
As an example, when the input end of the upper air inlet device 13 is connected to the cold end 703 and the input end of the lower air inlet device 23 is connected to the hot end 704, a second heating device is further disposed in the lower chamber 20, and the second heating device is one or a combination of a heating component 802 and a heat transfer component; the heating component 802 is a heater, at least part of which is located in the lower chamber 20 and is used for heating the lower chamber 20; the heat transfer assembly is a hot plate 801 or a second air intake (not shown); the thermal plate 801 is located below the wafer carried by the second wafer support 21, the bottom end of the thermal plate 801 is connected to the hot end 704 through the hot flow channel 8011, and the high-temperature gas flowing out of the hot end 704 is transferred to the thermal plate 801 through the hot flow channel 8011; the second air inlet device is communicated with the lower chamber 20, and the input end of the second air inlet device is connected with the hot end 704, and the hot end 704 provides a heat source for the lower chamber 20 through the second air inlet device.
Specifically, referring to fig. 2, in one embodiment, the second heating device is a heating assembly 802, the heating assembly 802 is a heater, a heat dissipation end of the heater is flat and is located below the wafer carried by the second wafer support 21, and the electric heating of the heater transfers heat to the lower chamber 20 through the heat dissipation end, so as to heat the wafer; preferably, a gap, typically not less than 0.5mm, is also provided between the top end of the heat dissipating end of the heater and the bottom end of the wafer carried by the second wafer support 21.
Referring to fig. 3, in another embodiment, the second heating device is a heat transfer component, the heat transfer component is a heat disk 801, a heat disk support component is disposed at a bottom end of the heat disk 801, a heat flow channel 8011 is provided through the heat disk support component, an input end of the heat flow channel 8011 is connected with a hot end 704, an output end of the heat flow channel 8011 is led to the bottom end of the heat disk 801, and high-temperature air flowing out of the hot end 704 flows through the heat flow channel 8011 to be transferred to the heat disk 801, so that the high-temperature air is emitted into an underlying chamber 20 through the heat disk 801; preferably, the thermal pad 801 is located below the wafer carried by the second wafer support 21, and a gap is further provided between the top end of the thermal pad 801 and the bottom end of the wafer carried by the second wafer support 21, which is typically not less than 0.5mm.
In other embodiments, the second heating device is a heat transfer component, the heat transfer component is a second air inlet device (not shown in the figure), the second air inlet device is disposed in communication with the lower chamber 20, and an input end of the second air inlet device is connected to the hot end 704, and the hot end 704 provides a heat source for the lower chamber 20 through the second air inlet device; preferably, the second air inlet device is a diffuser, and the output end of the diffuser is located in the lower chamber 20 and below the wafer carried by the second wafer support 21, however, the second air inlet device may be another component, which is not limited herein.
Of course, in other embodiments, when the input end of the upper air inlet device 13 is connected to the cold end 703 and the input end of the lower air inlet device 23 is connected to the hot end 704, the second heating device may be a combination of the heating assembly 802 and the heat transfer assembly, that is, the second heating device may include a heater and the heat tray 801, or may include a heater and the second air inlet device.
As an example, the heat plate 801 is a diffusion-type heat plate 801, the diffusion-type heat plate 801 is formed by sintering a metal with a high porous heat conductivity coefficient, and a plurality of heat through holes (not shown in the figure) are formed in the diffusion-type heat plate 801, and the size of the heat through holes is 1nm to 100 μm.
Specifically, the sizes of the heat vias on the diffusion type heat plate 801 are not uniform, and the sizes of the heat vias include values in the range of 1 nm, 100 nm, 500 nm, 1 μm, 10 μm, 50 μm, 80 μm, 100 μm, and the like.
As an example, when the input end of the upper air inlet device 13 and the input end of the lower air inlet device 23 are connected to the cold end 703, a third air inlet device 803 is further disposed in the lower chamber 20 in a communicating manner, the input end of the third air inlet device 803 is connected to the cold end 703, and the air flow flowing out of the cold end 703 enters the lower chamber 20 through the third air inlet device 803.
Specifically, referring to fig. 4, in an embodiment, when the upper chamber 10 and the lower chamber 20 are both cooling chambers, the low-temperature air flow flowing out of the cold end 703 enters the upper chamber 10 through the upper air inlet device 13 to cool the wafer in the upper chamber 10, the low-temperature air flow flowing out of the cold end 703 enters the lower chamber 20 through the lower air inlet device 23 and the third air inlet device 803 to cool the wafer in the lower chamber 20; while the high temperature gas flow at hot end 704 of vortex generating assembly 700 is used for other devices, it is not described here too much.
Preferably, the output end of the third air inlet device 803 is located directly under the wafer carried by the second wafer support 21, and at this time, the output end of the lower air inlet device 23 is disposed on the side surface of the lower chamber 20 in a communicating manner, so as to cool the whole surrounding atmosphere of the lower chamber 20, thereby achieving a better cooling effect.
As an example, a cold plate 901 is disposed in the upper chamber 10, the cold plate 901 is located below the wafer carried by the first wafer support 11, and the bottom end of the cold plate 901 is connected to the cold end 703 through a cold flow channel 9011, and the low temperature gas flowing out of the cold end 703 flows through the cold flow channel 9011 to be transferred to the cold plate 901.
Specifically, referring to fig. 3 and 4, in the embodiment, the cold plate 901 is welded to the inner wall of the upper chamber 10 and is located below the wafer carried by the first wafer support 11, the cold flow channel 9011 is disposed in the load lock body 1, the input end of the cold flow channel 9011 is connected to the cold end 703, the output end of the cold flow channel 9011 is connected to the bottom end of the cold plate 901, and preferably, the output end of the cold flow channel 9011 is connected to a position right in the middle of the bottom end of the cold plate 901.
In addition, a certain gap is provided between the top end of the cold plate 901 and the bottom end of the wafer carried by the first wafer holder 11, and the gap is usually not less than 0.5mm.
As an example, the cold plate 901 is a diffusion type cold plate 901, the diffusion type cold plate 901 is formed by sintering metal with high porous heat conductivity coefficient, a plurality of cold through holes (not shown in the figure) are formed on the diffusion type cold plate 901, and the size of the cold through holes is 1 nm-100 μm.
Specifically, the size of the cold through holes in the diffusion cold plate 901 is not uniform, and the size of the cold through holes includes values in the range of 1 nm, 100 nm, 500 nm, 1 μm, 10 μm, 50 μm, 80 μm, 100 μm, and the like.
For a better understanding of the load lock apparatus for a chemical vapor deposition apparatus of the present invention, the load lock apparatus of the present invention is described below with reference to specific embodiments, which should be construed as merely illustrative, and not limitative of the present invention in any way.
Example 1
Referring to fig. 2, the present embodiment provides a load lock apparatus for a chemical vapor deposition apparatus, the load lock apparatus comprising: the load lock body 1, the heat shield 600, the vortex generating assembly 700, the upper air inlet means 13 and the lower air inlet means 23.
The load lock body 1 comprises an upper chamber 10 and a lower chamber 20 which are arranged at intervals, wherein a first wafer support 11 is arranged in the upper chamber 10, a second wafer support 21 is arranged in the lower chamber 20, and the first wafer support 11 and the second wafer support 21 are used for bearing wafers; the heat insulating plate 600 is disposed between the upper chamber 10 and the lower chamber 20; the vortex generating assembly 700 is mounted on the load lock body 1 and penetrates through the upper end and the lower end of the load lock body 1, and the vortex generating assembly 700 comprises a vortex generating body 701, an air inlet end and an air outlet end; the vortex generating body 701 is internally provided with a vortex chamber 7011, the input end of the air inlet end is connected with an inert air source 40, the output end of the air inlet end is communicated with the vortex chamber 7011, and the inert air source 40 enters the vortex chamber 7011 through the air inlet end to generate vortex so as to form high-temperature air flow and low-temperature air flow; the air outlet end comprises a cold end 703 and a hot end 704, and the low-temperature air flows out from the cold end 703 and is used for providing a cold source; the high temperature gas stream flows from hot end 704 and is used to provide a heat source; the upper air inlet device 13 is arranged in the upper chamber 10, the output end of the upper air inlet device 13 is communicated with the upper chamber 10, and the input end of the upper air inlet device 13 is connected with the cold end 703; the lower air inlet device 23 is arranged in the lower chamber 20, the output end of the lower air inlet device 23 is communicated with the lower chamber 20, and the input end of the lower air inlet device 23 is connected with the hot end 704; in addition, a second heating device is further disposed in the lower chamber 20 in this embodiment, the second heating device is a heating assembly 802, and the heating assembly 802 is a heater, at least a part of the heater is located in the lower chamber 20, and is used for heating the lower chamber 20.
The upper chamber 10 in the load lock device of the embodiment is a cooling chamber, the lower chamber 20 is a heating chamber, through the arrangement of the vortex generating assembly 700, the inert gas source 40 is introduced into the vortex chamber 7011 through the gas inlet end, high-temperature gas flow and low-temperature gas flow are rapidly generated in the vortex chamber 7011 in a short time, the high-temperature gas flow flowing out of the hot end 704 enters the lower chamber 20 through the lower gas inlet device 23 to provide a heat source for the lower chamber 20, and meanwhile, a heater arranged in the lower chamber 20 also heats the lower chamber 20; the low-temperature air flow flowing out of the cold end 703 enters the upper chamber 10 through the upper air inlet device 13 to provide a cold source for the upper chamber 10; only one vortex generating assembly 700 is needed in the device to realize heating or cooling, so that the device is energy-saving and environment-friendly, and meanwhile, the heat insulation plate 600 can effectively insulate heat between the upper chamber 10 and the lower chamber 20, so that energy sources are saved.
Example 2
Referring to fig. 3, the present embodiment provides a load lock apparatus for a chemical vapor deposition apparatus, which is different from that in embodiment 1 in that: in this embodiment, a cold tray 901 is disposed in the upper chamber 10, the cold tray 901 is located below a wafer carried by the first wafer support 11, the bottom end of the cold tray 901 is connected to the cold end 703 through a cold flow channel 9011, and a low-temperature gas flowing out of the cold end 703 flows through the cold flow channel 9011 and is transferred to the cold tray 901; a second heating device is also arranged in the lower chamber 20, but the second heating device is a heat transfer component, the heat transfer component is a heat disk 801, the heat disk 801 is positioned below the second wafer support 21, the bottom end of the heat disk 801 is connected with a hot end 704 through a hot flow channel 8011, and high-temperature gas flowing out of the hot end 704 is transmitted to the heat disk 801 through the hot flow channel 8011; meanwhile, the heat plate 801 in the embodiment is a diffusion heat plate 801, the diffusion heat plate 801 is formed by sintering metal with high porous heat conductivity coefficient, a plurality of heat through holes are formed in the diffusion heat plate 801, and the size of the heat through holes is 1 nm-100 μm; the cold plate 901 in the embodiment is a diffusion type cold plate 901, the diffusion type cold plate 901 is formed by sintering metal with high porous heat conductivity coefficient, a plurality of cold through holes are formed in the diffusion type cold plate 901, and the size of the cold through holes is 1 nm-100 mu m; other structures are the same as those in embodiment 1, and will not be described here again.
The upper chamber 10 in the load lock device of the embodiment is a cooling chamber, the lower chamber 20 is a heating chamber, through the arrangement of the vortex generating assembly 700, the inert gas source 40 is introduced into the vortex chamber 7011 through the gas inlet end, high-temperature gas flow and low-temperature gas flow are rapidly generated in the vortex chamber 7011 in a short time, and the high-temperature gas flow flowing out of the hot end 704 enters the lower chamber 20 through the lower gas inlet device 23 to provide a heat source for the lower chamber 20; meanwhile, the high-temperature gas flowing out of the hot end 704 is transmitted to the hot plate 801 through the hot flow channel 8011, so that the lower chamber 20 is heated; the low-temperature air flow flowing out of the cold end 703 enters the upper chamber 10 through the upper air inlet device 13 on one hand to provide a cold source for the upper chamber 10; on the other hand, the low-temperature gas flowing out of the cold end 703 is conveyed to the cold tray 901 through the cold flow channel 9011, so that the upper chamber 10 is cooled; only one vortex generating assembly 700 is needed in the device to realize heating or cooling, so that the use of electric heating is reduced, and the device is energy-saving and environment-friendly.
Example 3
Referring to fig. 4, the present embodiment provides a load lock apparatus for a chemical vapor deposition apparatus, which is different from that in embodiment 1 in that: in this embodiment, the upper chamber 10 and the lower chamber 20 are cooling chambers, the input ends of the upper air inlet device 13 and the lower air inlet device 23 are connected with the cold end 703, and the low-temperature air flow flowing out of the cold end 703 provides cold sources for the upper chamber 10 and the lower chamber 20 at the same time; in addition, a cold plate 901 is disposed in the upper chamber 10 of the embodiment, the cold plate 901 is located below a wafer carried by the first wafer support 11, the bottom end of the cold plate 901 is connected with the cold end 703 through a cold flow channel 9011, the low temperature air flowing out of the cold end 703 flows through the cold flow channel 9011 and is transferred to the cold plate 901, the cold plate 901 in the embodiment is a diffusion type cold plate 901, the diffusion type cold plate 901 is formed by sintering metal with high porous heat conductivity coefficient, a plurality of cold through holes are formed in the diffusion type cold plate 901, and the size of the cold through holes is 1 nm-100 μm; the lower chamber 20 is not provided with a second heating device, but a third air inlet device 803 is communicated with the lower chamber 20, the input end of the third air inlet device 803 is connected with a cold end 703, and the generated air flow flowing out of the cold end 703 enters the lower chamber 20 through the third air inlet device 803; other structures are the same as those in embodiment 1, and will not be described here again.
The upper chamber 10 in the load lock device of the embodiment is a cooling chamber, the lower chamber 20 is also a cooling chamber, through the arrangement of the vortex generating assembly 700, the inert gas source 40 is introduced into the vortex chamber 7011 through the gas inlet end, high-temperature gas flow and low-temperature gas flow are rapidly generated in the vortex chamber 7011 in a short time, and the low-temperature gas flow flowing out of the cold end 703 enters the upper chamber 10 through the upper gas inlet device 13 on one hand to provide a cold source for the upper chamber 10; on the other hand, the low-temperature gas flowing out of the cold end 703 is conveyed to the cold tray 901 through the cold flow channel 9011, so that the upper chamber 10 is cooled; meanwhile, the low-temperature air flowing out of the cold end 703 is introduced into the lower chamber 20 through the lower air inlet device 23 and the third air inlet device 803, so as to provide a cold source for the lower chamber 20; while the high temperature air stream may be used for other equipment applications and will not be described in detail herein.
The load lock device in this embodiment can cool the wafers in the upper chamber 10 and the lower chamber 20 by only using one vortex generating assembly 700, thereby reducing the use of the refrigerant liquid, and saving energy and protecting environment.
In summary, the load lock apparatus of the present invention includes a load lock main body, a heat insulation board, a vortex generating assembly, an upper air inlet device and a lower air inlet device, wherein the load lock main body includes an upper chamber and a lower chamber which are arranged at intervals, a first wafer support is arranged in the upper chamber, a second wafer support is arranged in the lower chamber, and a plurality of first wafer supports and second wafer supports are arranged in the lower chamber, so that a plurality of wafers can be processed simultaneously in one chamber, thereby greatly improving the production efficiency of the wafers; the heat insulation plate is arranged between the upper chamber and the lower chamber, and can fully and effectively insulate heat between the upper chamber and the lower chamber, so that the processes between the upper chamber and the lower chamber are not affected, the method is simple, and the energy is saved; the vortex generating assembly comprises a vortex generating body, an air inlet end and an air outlet end, a vortex chamber is arranged in the vortex generating body, an inert air source is introduced into the vortex chamber through the air inlet end, high-temperature air flow and low-temperature air flow are rapidly generated in a short time, the high-temperature air flow provides a heat source for an upper-layer chamber or a lower-layer chamber through a hot end, and the low-temperature air flow provides a cold source for the upper-layer chamber or the lower-layer chamber through a cold end, so that the cooling and heating time is shortened, and the production efficiency of wafers is greatly improved; in addition, the invention can realize heating or cooling by only one vortex generating component, thereby reducing the use of electric heating, reducing the use of refrigerating fluid, saving energy and protecting environment. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. A load lock apparatus for a chemical vapor deposition apparatus, the load lock apparatus comprising:
the load locking device comprises a load locking main body, a first wafer support and a second wafer support, wherein the load locking main body comprises an upper layer chamber and a lower layer chamber which are arranged at intervals, the upper layer chamber is internally provided with the first wafer support, the lower layer chamber is internally provided with the second wafer support, and the first wafer support and the second wafer support are used for bearing wafers;
the heat insulation plate is arranged between the upper cavity and the lower cavity;
the vortex generating assembly is arranged on the load locking main body and penetrates through the upper end and the lower end of the load locking main body, and comprises a vortex generating body, an air inlet end and an air outlet end; the inside of the vortex generating body is provided with a vortex chamber, the input end of the air inlet end is connected with an inert air source, the output end of the air inlet end is communicated with the vortex chamber, and the inert air source enters the vortex chamber through the air inlet end to generate vortex so as to form high-temperature air flow and low-temperature air flow; the air outlet end comprises a cold end and a hot end, and the low-temperature air flows out from the cold end and is used for providing a cold source; the high-temperature air flows out of the hot end and is used for providing a heat source;
The upper air inlet device is communicated with the upper chamber, and the input end of the upper air inlet device is connected with the hot end or the cold end;
the lower air inlet device is communicated with the lower-layer cavity, and the input end of the lower air inlet device is connected with the hot end or the cold end.
2. The load lock apparatus for a chemical vapor deposition apparatus according to claim 1, wherein: the heat insulation plate is made of stainless steel or titanium alloy, and the thickness of the heat insulation plate is 5 mm-10 mm.
3. The load lock apparatus for a chemical vapor deposition apparatus according to claim 1, wherein: an inert gas chamber is further arranged between the inert gas source and the gas inlet end, the gas inlet end is positioned in the inert gas chamber, the gas inlet end comprises a plurality of vortex gas inlets, the vortex gas inlets are uniformly formed along the circumference of the same plane of the vortex generating body, and each vortex gas inlet penetrates through the inner wall and the outer wall of the vortex generating body and is communicated with the vortex chamber.
4. The load lock apparatus for a chemical vapor deposition apparatus according to claim 1, wherein: the hot end comprises a heat flow control unit, the heat flow control unit comprises a base and a conical table positioned above the base, the outer wall of the base is in threaded connection with the load locking main body, a heat flow air passage and a hot end port are formed in the base, and the heat flow air passage is communicated with the hot end port;
At least part of the conical table is sleeved in the vortex chamber, a heat flow control gap is formed between the conical surface of the circumferential direction of the conical table and the inner wall of the vortex chamber, and high-temperature air flows out of the heat flow control gap and passes through the heat flow air passage to enter the hot end opening.
5. The load lock apparatus for a chemical vapor deposition apparatus according to claim 4, wherein: the cold end is provided with a cold port, the input end of the cold port is communicated with the vortex chamber, the output end of the cold port penetrates through the top end of the vortex generator, and the caliber of the cold port is smaller than that of the hot port.
6. The load lock apparatus for a chemical vapor deposition apparatus according to claim 1, wherein: when the input end of the upper air inlet device is connected with the cold end and the input end of the lower air inlet device is connected with the hot end, a second heating device is further arranged in the lower chamber, and the second heating device is one or a combination of a heating component and a heat transfer component;
the heating assembly is a heater, and at least part of the heater is positioned in the lower-layer chamber and is used for heating the lower-layer chamber;
The heat transfer component is a hot plate or a second air inlet device; the hot plate is positioned below the second wafer support, the bottom end of the hot plate is connected with the hot end through a heat flow channel, and high-temperature air flow flowing out of the hot end is transmitted to the hot plate through the heat flow channel; the second air inlet device is communicated with the lower-layer cavity, the input end of the second air inlet device is connected with the hot end, and high-temperature air flow flowing out of the hot end provides a heat source for the lower-layer cavity through the second air inlet device.
7. The load lock apparatus for a chemical vapor deposition apparatus according to claim 6, wherein: the heat disc is a diffusion type heat disc, the diffusion type heat disc is formed by sintering metal with high porous heat conductivity coefficient, a plurality of heat through holes are formed in the diffusion type heat disc, and the size of each heat through hole is 1 nm-100 mu m.
8. The load lock apparatus for a chemical vapor deposition apparatus according to claim 1, wherein: when the input end of the upper air inlet device and the input end of the lower air inlet device are connected with the cold end, a third air inlet device is further communicated with the lower chamber, the input end of the third air inlet device is connected with the cold end, and the low-temperature air flow flowing out of the cold end enters the lower chamber through the third air inlet device.
9. The load lock apparatus for a chemical vapor deposition apparatus according to claim 6 or 8, wherein: the upper chamber is internally provided with a cold disc, the cold disc is positioned below the wafer borne by the first wafer bracket, the bottom end of the cold disc is connected with the cold end through a cold flow channel, and low-temperature air flow flowing out of the cold end is transmitted to the cold disc through the cold flow channel.
10. The load lock apparatus for a chemical vapor deposition apparatus according to claim 9, wherein: the cold disc is a diffusion type cold disc, the diffusion type cold disc is formed by sintering metal with high porous heat conductivity coefficient, a plurality of cold through holes are formed in the diffusion type cold disc, and the size of each cold through hole is 1 nm-100 mu m.
CN202310436947.6A 2023-04-23 2023-04-23 Load lock apparatus for chemical vapor deposition apparatus Active CN116153826B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010055674A (en) * 1999-12-11 2001-07-04 박종섭 Chemical vapor deposition apparatus for forming metal line of semiconductor element
JP2007250802A (en) * 2006-03-15 2007-09-27 Hitachi Kokusai Electric Inc Substrate processing apparatus
TW201430943A (en) * 2012-11-07 2014-08-01 Tokyo Electron Ltd Substrate cooling member, substrate processing device, and substrate processing method
CN104795862A (en) * 2015-05-21 2015-07-22 中国石油大学(华东) Portable charging device based on vortex tube
CN106232863A (en) * 2014-04-16 2016-12-14 应用材料公司 Load lock chamber and vacuum flush system for vacuum flush system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010055674A (en) * 1999-12-11 2001-07-04 박종섭 Chemical vapor deposition apparatus for forming metal line of semiconductor element
JP2007250802A (en) * 2006-03-15 2007-09-27 Hitachi Kokusai Electric Inc Substrate processing apparatus
TW201430943A (en) * 2012-11-07 2014-08-01 Tokyo Electron Ltd Substrate cooling member, substrate processing device, and substrate processing method
CN106232863A (en) * 2014-04-16 2016-12-14 应用材料公司 Load lock chamber and vacuum flush system for vacuum flush system
CN104795862A (en) * 2015-05-21 2015-07-22 中国石油大学(华东) Portable charging device based on vortex tube

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