CN116153793A - Method for improving contact ratio residual value of bonding surface - Google Patents

Method for improving contact ratio residual value of bonding surface Download PDF

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Publication number
CN116153793A
CN116153793A CN202310189838.9A CN202310189838A CN116153793A CN 116153793 A CN116153793 A CN 116153793A CN 202310189838 A CN202310189838 A CN 202310189838A CN 116153793 A CN116153793 A CN 116153793A
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wafer
standard
alignment mark
test
bonding
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CN202310189838.9A
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Chinese (zh)
Inventor
余兴
王清蕴
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ICLeague Technology Co Ltd
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ICLeague Technology Co Ltd
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Priority to CN202310189838.9A priority Critical patent/CN116153793A/en
Publication of CN116153793A publication Critical patent/CN116153793A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212—Aligning
    • H01L2224/82121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/8213—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body

Abstract

The invention provides a method for improving the contact ratio residual value of a bonding surface. The method for improving the contact ratio residual value of the bonding surface comprises the following steps: providing a first wafer and a second wafer; performing first photoetching on the first wafer and the second wafer to form standard alignment marks on the first wafer and the second wafer; performing second photoetching on the second wafer, and compensating the standard alignment mark of the second wafer according to the pre-acquired alignment mark compensation value to enable the second wafer to form a compensation alignment mark; and bonding the first wafer and the second wafer by taking the standard alignment mark of the first wafer and the compensation alignment mark of the second wafer as references to form a wafer bonding structure. According to the technical scheme, the same standard alignment marks are generated on the two wafers through first photoetching, so that the difference of the alignment marks of the two wafers is reduced; and introducing a second photoetching to perform mark compensation on the second wafer so as to compensate the residual value of the contact ratio brought by the upper chuck and the lower chuck during bonding.

Description

Method for improving contact ratio residual value of bonding surface
Technical Field
The invention relates to the field of semiconductors, in particular to a method for improving the contact ratio residual value of a bonding surface.
Background
In semiconductor processing, it is becoming more common to attach wafers of two different functional devices together by creating a three-dimensional stacking process that covalent chemical bonds. In the three-dimensional stacking process, the overlap ratio (OVL) of the bonding surfaces of two wafers is an important index. The absolute bonding non-deviation OVL value is 0, and a larger value indicates a larger offset. The OVL residual value refers to an OVL value that the bonding tool cannot compensate. As device dimensions shrink, the margin of tolerance for OVL is also becoming smaller. However, due to the difference of the front-end process of the two wafers and the deformation generated in the bonding process of the bonding machine, a certain OVL residual value always exists.
The current process control method comprises the following steps: in the bonding surface photoetching process, the OVL of each of the two wafers relative to the front layer is strictly controlled. From the results, if the difference between the previous layers of the two wafers is large, this increases the OVL residual value during bonding. Secondly, the OVL difference caused by deformation in the bonding machine process cannot be solved by the method.
Therefore, how to improve the difference caused by the front-end process of the two wafers and the deformation generated in the bonding process of the bonding machine, so as to reduce the OVL residual value is a problem to be solved at present.
Disclosure of Invention
The invention aims to solve the technical problem of improving the difference caused by the front-end process of two wafers and the deformation generated in the bonding process of a bonding machine, so as to reduce the OVL residual value and provide a method for improving the overlap ratio residual value of a bonding surface.
In order to solve the above problems, the present invention provides a method for improving the contact ratio residual value of a bonding surface, comprising the following steps: providing a first wafer and a second wafer; performing first photoetching on the first wafer and the second wafer to form standard alignment marks on the first wafer and the second wafer; performing second photoetching on the second wafer, and compensating a standard alignment mark of the second wafer according to a pre-acquired alignment mark compensation value to enable the second wafer to form a compensation alignment mark; and bonding the first wafer and the second wafer by taking the standard alignment mark of the first wafer and the compensation alignment mark of the second wafer as references to form a wafer bonding structure.
According to the technical scheme, the same standard alignment marks are generated on the two wafers through first photoetching, so that the difference of the alignment marks caused by the front-end process of the two wafers is reduced; and (3) introducing second photoetching to compensate the standard alignment mark of the second wafer so as to compensate the residual value of the contact ratio brought by the bonding machine, thereby reducing the residual value of the contact ratio of the bonding surfaces of the two wafers.
Drawings
FIG. 1 is a schematic diagram of one embodiment of a wafer bonding process.
FIG. 2 is a flowchart illustrating a method for improving the bonding surface overlap ratio residual value according to an embodiment of the invention.
Fig. 3A to 3D are process flow diagrams illustrating an embodiment of a method for improving the contact ratio residual value of a bonding surface according to the present invention.
FIG. 4 is a flow chart showing the steps of the method for detecting the residual value of the contact ratio of the bonding machine and the photoetching machine.
Detailed Description
The following describes in detail the specific embodiments of the method for improving the bonding surface overlap ratio residual value provided by the invention with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of one embodiment of a wafer bonding process. As shown in fig. 1, a first alignment mark 13 is formed on a logic wafer 11, a second alignment mark 14 is formed on a storage wafer 12, and two wafers are bonded to form a wafer bonding structure 15 by taking the first alignment mark 13 of the logic wafer 11 and the second alignment mark 14 of the storage wafer 12 as references. However, since the first alignment mark 13 is different from the second alignment mark 14, the first alignment mark 13 and the second alignment mark 14 on the bonded wafer bonding structure 15 have a certain offset, i.e. a bonding surface overlap ratio residual value is generated. Therefore, the invention provides a method for improving the bonding surface overlap ratio residual value, and the OVL residual value is reduced so as to obtain a better wafer bonding structure.
FIG. 2 is a flowchart showing steps of a method for improving the contact ratio residual value of a bonding surface according to an embodiment of the invention, including the following steps: step S21, providing a first wafer and a second wafer; step S22, performing first photoetching on the first wafer and the second wafer to form standard alignment marks on the first wafer and the second wafer; step S23, performing second photoetching on the second wafer, forming a standard alignment mark on the first wafer, and compensating the standard alignment mark of the second wafer according to a pre-acquired alignment mark compensation value to form a compensation alignment mark on the second wafer; and step S24, bonding the first wafer and the second wafer by taking the standard alignment mark of the first wafer and the compensation alignment mark of the second wafer as references to form a wafer bonding structure.
Fig. 3A to 3D are process flow diagrams illustrating an embodiment of a method for improving the contact ratio residual value of a bonding surface according to the present invention.
Referring to fig. 3A and step S21, a first wafer 31 and a second wafer 32 are provided. In this embodiment, the first wafer 31 is a logic wafer, and the second wafer 32 is a storage wafer. In some embodiments, the first wafer 31 is formed with a first original alignment mark 33 and the second wafer 32 is formed with a second original alignment mark 34.
With continued reference to fig. 3B and step S22, the first lithography is performed on the first wafer 31 and the second wafer 32, so that the first wafer 31 and the second wafer 32 form standard alignment marks 35. In some embodiments, the standard alignment mark 35 is formed by performing a first photolithography on the first wafer 31 and the second wafer 32 using a double photolithography machine. The standard alignment mark 35 is formed by a double photoetching machine, and the bonding overlap ratio residual value from the front layer is removed in the bonding surface photoetching process. After the standard alignment mark 35 is formed, the first original alignment mark 33 and the second original alignment mark 34 are covered. Since the first original alignment mark 33 (shown in fig. 3A) is different from the second original alignment mark 34 (shown in fig. 3A), a residual value of the contact ratio is generated after bonding the wafers. The same standard alignment mark 35 is generated on the first wafer 31 and the second wafer 32 by the first photolithography to reduce the difference between the alignment marks of the first wafer 31 and the second wafer 32, thereby reducing the residual value of the contact ratio after the first wafer 31 and the second wafer 32 are bonded.
With continued reference to fig. 3C and step S23, the second wafer 32 is subjected to a second photolithography, and the standard alignment mark 33 of the second wafer 32 is compensated according to the pre-obtained alignment mark compensation value, so that the second wafer 32 forms the compensated alignment mark 36. In some embodiments, the compensation alignment mark 36 may be formed by performing displacement compensation based on the pre-acquired alignment mark compensation value on the basis of the standard alignment mark 35 generated by the first photolithography. In other embodiments, the compensation alignment mark 36 may be formed by adding a rotation angle to the standard alignment mark 35 according to the pre-acquired alignment mark compensation value. In some embodiments, the compensation alignment mark 36 is formed by performing a second photolithography on the second wafer 32 using a compensation photolithography machine. The pre-acquisition of the alignment mark compensation value further comprises the steps of: providing two test wafers; photoetching is carried out on the two test wafers, so that standard alignment marks 35 are formed on the two test wafers; respectively placing the two test wafers in an upper chuck and a lower chuck of a bonding machine; bonding the two test wafers to form a first test wafer bonding structure; and measuring the residual value of the contact ratio of the standard alignment marks of the two test wafers in the first test wafer bonding structure, and taking the residual value of the contact ratio as the compensation value of the alignment marks. In the three-dimensional stacking process, the coincidence degree of the bonding surfaces of two wafers is an important index. The overlap ratio value of absolute bonding non-deviation is 0, and a larger value indicates a larger offset. The residual value of the contact ratio refers to the contact ratio value which cannot be compensated by the bonding machine.
With continued reference to fig. 3D and step S24, the first wafer 31 and the second wafer 32 are bonded with the standard alignment mark 35 of the first wafer 31 and the compensating alignment mark 36 of the second wafer 32 as references, so as to form a wafer bonding structure 37. In some embodiments, bonding the first wafer 31 and the second wafer 32 further comprises the steps of: placing the first wafer 31 on an upper chuck of a bonding machine and the second wafer 32 on a lower chuck of the bonding machine; the first wafer 31 and the second wafer 32 are bonded to form a wafer bonding structure 37. In the bonding process, wafers positioned on the upper chuck and the lower chuck can generate certain offset during bonding due to inherent reasons of process, equipment and the like, so that a larger overlap ratio residual value is formed. The second wafer 32 located on the lower chuck during bonding is not flipped during bonding and is not axisymmetric with respect to the lithographic process, so that the offset value can be reduced by placing the second wafer 32 with the compensating alignment marks 36 on the lower chuck. In the above technical solution, the standard alignment mark of the second wafer 32 is compensated by using the standard mark compensation value to form the compensated alignment mark 36, so that the offset value generated due to the inherent reasons of the process and equipment in the bonding process is pre-compensated, and therefore, the alignment marks of the two wafers can be aligned after bonding, i.e. the residual value of the overlap ratio is reduced.
In some embodiments, after bonding the first wafer 31 and the second wafer 32, the method further includes a step of thinning the first wafer 31 from a surface of the first wafer 31 facing away from the second wafer 32. In the wafer processing technology, the wafer is usually thinned before subsequent processing flows such as etching, chemical deposition, electroplating and the like are performed. In some embodiments, methods of thinning wafers include, but are not limited to, mechanical polishing, chemical etching, and chemical mechanical planarization.
In the above technical solution, the same standard alignment mark 35 is generated on the first wafer 31 and the second wafer 32 by the first photolithography, so as to reduce the difference between the alignment marks of the first wafer 31 and the second wafer 32, and further reduce the residual value of the contact ratio after the first wafer 31 and the second wafer 32 are bonded.
In addition, the invention also provides a method for detecting the coincidence residual value of the bonding machine and the photoetching machine.
FIG. 4 is a flowchart showing steps of a method for detecting a residual value of a contact ratio between a bonding machine and a lithography machine according to the present invention, including the following steps: step S41, photoetching at least one wafer to form a standard alignment mark, wherein the wafer after photoetching is used as a standard wafer; and S42, detecting the contact ratio of the upper chuck and the lower chuck of the bonding machine and the photoetching machine by adopting the standard wafer.
Referring to step S41, at least one wafer is subjected to photolithography to form a standard alignment mark, and the wafer after photolithography is used as a standard wafer. In some embodiments, the standard alignment mark is formed using a single-pass lithography machine to lithographically process at least one wafer. In this embodiment, 100 wafers are subjected to photolithography by a double photolithography machine as standard wafers for inspection of the bonding stage and the photolithography machine.
And S42, detecting the contact ratio of the upper chuck and the lower chuck of the bonding machine and the photoetching machine by adopting the standard wafer. In some embodiments, the detecting the contact ratio of the chuck on the bonding machine further includes the following steps: placing the standard wafer on an upper chuck, and placing a test wafer on a lower chuck, wherein the test wafer is provided with an initial alignment mark; taking the standard alignment mark of the standard wafer and the initial alignment mark of the test wafer as references, bonding the standard wafer and the test wafer to form a second test wafer bonding structure; thinning the bonded standard wafer; photoetching the surface of the test wafer, which is away from the standard wafer, to form the standard alignment mark; and measuring the coincidence ratio of the standard alignment mark of the test wafer and the standard wafer in the second test wafer bonding structure. The second test wafer bonding structure is used for detecting the chuck on the bonding machine table so as to confirm whether the residual value of the contact ratio is offset or not when the chuck is bonded, thereby ensuring that the residual value of the contact ratio of wafer bonding is smaller in the production process.
In some embodiments, the detecting the contact ratio of the bonding machine lower chuck further includes the following steps: placing a test wafer on an upper chuck, and placing a standard wafer on a lower chuck, wherein the test wafer is provided with an initial alignment mark; taking the standard alignment mark of the standard wafer and the initial alignment mark of the test wafer as references, bonding the standard wafer and the test wafer to form a third test wafer bonding structure; thinning the bonded test wafer; photoetching the surface of the test wafer, which is away from the standard wafer, to form the standard alignment mark; and measuring the coincidence ratio of the standard alignment mark of the test wafer and the standard wafer in the third test wafer bonding structure. The third test wafer bonding structure is used for detecting the lower chuck of the bonding machine to confirm whether the contact ratio residual value is offset or not when the lower chuck is bonded, so that the contact ratio residual value of wafer bonding in the production process is smaller.
In some embodiments, the lithography machine comprises a double lithography machine, and the detecting the contact ratio of the lithography machine further comprises the steps of: photoetching the test wafer by adopting a double photoetching machine to form the standard alignment mark; taking the standard alignment mark of the standard wafer and the standard alignment mark of the test wafer as references, bonding the test wafer and the standard wafer to form a fourth test wafer bonding structure; and detecting the contact ratio of the test wafer and the standard alignment mark of the standard wafer in the fourth test wafer bonding structure. The fourth test wafer bonding structure is used for detecting the one-time photoetching machine to confirm whether the standard photoetching marks on the surface of the photoetching wafer of the one-time photoetching machine are offset or not, so that the contact ratio residual value of wafer bonding in the production process is smaller.
In some embodiments, the lithographic apparatus comprises a compensation lithographic apparatus, and the detecting of the degree of overlap of the lithographic apparatus further comprises the steps of: photoetching the test wafer by adopting a compensation photoetching machine to form the standard alignment mark; taking the standard alignment mark of the standard wafer and the standard alignment mark of the test wafer as references, bonding the test wafer and the standard wafer to form a fifth test wafer bonding structure; and detecting the contact ratio of the test wafer and the standard alignment mark of the standard wafer in the fifth test wafer bonding structure. The fifth test wafer bonding structure is used for detecting the compensation photoetching machine so as to confirm whether the compensation photoetching mark on the surface of the photoetching wafer is offset when the compensation photoetching machine does not set the compensation value of the alignment mark.
In some embodiments, the lithography machine includes a compensation lithography machine, and performing the contact ratio detection on the lithography machine further includes the steps of: photoetching the test wafer by adopting a compensation photoetching machine to form the compensation alignment mark; taking the standard alignment mark of the standard wafer and the compensation alignment mark of the test wafer as references, bonding the test wafer and the standard wafer to form a sixth test wafer bonding structure; and detecting the coincidence ratio of the alignment mark of the test wafer and the standard wafer in the sixth test wafer bonding structure. The sixth test wafer bonding structure is used for detecting the compensation photoetching machine so as to confirm whether the compensation photoetching mark on the surface of the photoetching wafer is offset when the compensation photoetching machine sets the compensation value of the alignment mark, thereby ensuring that the residual value of the contact ratio of wafer bonding in the production process is smaller.
According to the technical scheme, the upper chuck, the lower chuck and the photoetching machine of the bonding machine table are detected, the working accuracy of the machine table is guaranteed, and the compensation value data is updated in real time, so that the contact ratio of wafer bonding in the production process is guaranteed, and the contact ratio residual value of wafer bonding is reduced.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (12)

1. A method for improving the contact ratio residual value of a bonding surface, which is characterized by comprising the following steps:
providing a first wafer and a second wafer;
performing first photoetching on the first wafer and the second wafer to form standard alignment marks on the first wafer and the second wafer;
performing second photoetching on the second wafer, and compensating a standard alignment mark of the second wafer according to a pre-acquired alignment mark compensation value to enable the second wafer to form a compensation alignment mark;
and bonding the first wafer and the second wafer by taking the standard alignment mark of the first wafer and the compensation alignment mark of the second wafer as references to form a wafer bonding structure.
2. The method of claim 1, wherein the standard alignment mark is formed by first photolithography of the first wafer and the second wafer using a double photolithography machine.
3. The method of claim 1, wherein pre-acquiring the alignment mark compensation value further comprises the steps of:
providing two test wafers;
photoetching is carried out on the two test wafers, so that standard alignment marks are formed on the two test wafers;
respectively placing the two test wafers in an upper chuck and a lower chuck of a bonding machine;
bonding the two test wafers to form a first test wafer bonding structure;
and measuring the residual value of the contact ratio of the standard alignment marks of the two test wafers in the first test wafer bonding structure, and taking the residual value of the contact ratio as the compensation value of the alignment marks.
4. The method of claim 1, wherein bonding the first wafer and the second wafer further comprises:
placing the first wafer on an upper chuck of a bonding machine and the second wafer on a lower chuck of the bonding machine; and bonding the first wafer and the second wafer to form a wafer bonding structure.
5. The method of claim 4, further comprising the step of thinning the first wafer from a surface of the first wafer facing away from the second wafer after bonding the first wafer and the second wafer.
6. The method of claim 1, further comprising the step of: photoetching at least one wafer to form a standard alignment mark, wherein the wafer after photoetching is used as a standard wafer;
and detecting the coincidence degree of the upper chuck, the lower chuck and the photoetching machine of the bonding machine by adopting the standard wafer.
7. The method of claim 6, wherein in the step of lithographically forming the standard alignment mark, the standard alignment mark is formed by lithographically forming the at least one wafer using a single lithography machine.
8. The method of claim 6, wherein the detecting the degree of overlap of the chuck on the bonding tool further comprises the steps of:
placing the standard wafer on an upper chuck, and placing a test wafer on a lower chuck, wherein the test wafer is provided with an initial alignment mark;
taking the standard alignment mark of the standard wafer and the initial alignment mark of the test wafer as references, bonding the standard wafer and the test wafer to form a second test wafer bonding structure;
thinning the bonded standard wafer;
photoetching the surface of the test wafer, which is away from the standard wafer, to form the standard alignment mark;
and measuring the coincidence ratio of the standard alignment mark of the test wafer and the standard wafer in the second test wafer bonding structure.
9. The method of claim 6, wherein the detecting the contact ratio of the bonding tool chuck further comprises:
placing a test wafer on an upper chuck, and placing a standard wafer on a lower chuck, wherein the test wafer is provided with an initial alignment mark;
taking the standard alignment mark of the standard wafer and the initial alignment mark of the test wafer as references, bonding the standard wafer and the test wafer to form a third test wafer bonding structure;
thinning the bonded test wafer; photoetching the surface of the test wafer, which is away from the standard wafer, to form the standard alignment mark;
and measuring the coincidence ratio of the standard alignment mark of the test wafer and the standard wafer in the third test wafer bonding structure.
10. The method of claim 6, wherein the lithography machine comprises a double lithography machine, and wherein performing the contact detection on the lithography machine further comprises:
photoetching the test wafer by adopting a double photoetching machine to form the standard alignment mark;
taking the standard alignment mark of the standard wafer and the standard alignment mark of the test wafer as references, bonding the test wafer and the standard wafer to form a fourth test wafer bonding structure;
and detecting the contact ratio of the test wafer and the standard alignment mark of the standard wafer in the fourth test wafer bonding structure.
11. The method of claim 6, wherein the lithography machine comprises a compensation lithography machine, and wherein performing the contact detection on the lithography machine further comprises:
photoetching the test wafer by adopting a compensation photoetching machine to form the standard alignment mark;
taking the standard alignment mark of the standard wafer and the standard alignment mark of the test wafer as references, bonding the test wafer and the standard wafer to form a fifth test wafer bonding structure;
and detecting the contact ratio of the test wafer and the standard alignment mark of the standard wafer in the fifth test wafer bonding structure.
12. The method of claim 6, wherein the lithography machine comprises a compensation lithography machine, and wherein performing the contact detection on the lithography machine further comprises:
photoetching the test wafer by adopting a compensation photoetching machine to form the compensation alignment mark;
taking the standard alignment mark of the standard wafer and the compensation alignment mark of the test wafer as references, bonding the test wafer and the standard wafer to form a sixth test wafer bonding structure;
and detecting the coincidence ratio of the alignment mark of the test wafer and the standard wafer in the sixth test wafer bonding structure.
CN202310189838.9A 2023-02-24 2023-02-24 Method for improving contact ratio residual value of bonding surface Pending CN116153793A (en)

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CN202310189838.9A CN116153793A (en) 2023-02-24 2023-02-24 Method for improving contact ratio residual value of bonding surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310189838.9A CN116153793A (en) 2023-02-24 2023-02-24 Method for improving contact ratio residual value of bonding surface

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CN116153793A true CN116153793A (en) 2023-05-23

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