CN116145087A

CN116145087A - Evaporation device

Info

Publication number: CN116145087A
Application number: CN202310180467.8A
Authority: CN
Inventors: 郭宝康; 张国辉; 胡永岚; 陈旭
Original assignee: Guan Yeolight Technology Co Ltd
Current assignee: Guan Yeolight Technology Co Ltd
Priority date: 2023-02-28
Filing date: 2023-02-28
Publication date: 2023-05-23
Anticipated expiration: 2043-02-28

Abstract

The invention discloses an evaporation device. The vapor deposition device comprises: vapor deposition source storage means provided with a vapor deposition gas outlet; the evaporation gas flow guiding device comprises a guiding channel; the height difference between the plane of the vapor deposition gas outlet and the plane of the substrate to be vapor deposited is a first distance, and the distance between the center of the vapor deposition gas outlet and the center of the substrate to be vapor deposited is a second distance; the included angle between the air flow direction of the vapor deposition gas in the guide channel and the plane of the vapor deposition gas outlet is larger than or equal to the arctangent function value of the ratio of the first distance to the second distance and smaller than or equal to the preset angle, the complement angle of the preset angle is the arctangent function value of the ratio of the first distance to the third distance, the third distance is equal to the difference value between the distance from the center of the substrate to be vapor deposited to the edge and the second distance, and the second distance and the third distance are in the same straight line and are positioned on the same side of the center of the substrate to be vapor deposited. The technical scheme improves the utilization rate of the evaporation material.

Description

Evaporation device

Technical Field

The invention relates to the technical field of semiconductors, in particular to an evaporation device.

Background

Organic Light Emitting Diodes (OLEDs) have the advantages of high contrast, wide color gamut, wide viewing angle, low power consumption, small volume, and the like, have wider applications and more significant advantages in the fields of curved screens, wearable displays, and the like, and are attracting attention in display technology.

The main process flow of the organic light-emitting layer of the OLED display screen is that an evaporation material arranged in an evaporation source storage device is heated and sublimated into gas molecules, and then the gas molecules are attached to a preset evaporation area of a substrate to be evaporated; in the manufacturing process, the adhesion state and uniformity of the organic light-emitting layer affect the display effect of the OLED display screen.

At present, in the evaporation process, the evaporation material in the evaporation source storage device continuously evaporates the evaporation gas, but only the evaporation material evaporated on the substrate can be effectively utilized, most of the evaporation material is evaporated on the inner wall of the chamber and other places, so that the waste of organic materials is serious, and the cost is high.

Disclosure of Invention

The invention provides an evaporation device, which is used for improving the utilization rate of evaporation materials.

According to an aspect of the present invention, there is provided an evaporation apparatus including:

a vapor deposition source storage device provided with a vapor deposition gas outlet;

the evaporation gas flow guiding device is arranged at the evaporation gas outlet and comprises at least one guiding channel, an evaporation material is placed in the evaporation source storage device, the evaporation material is evaporated under a thermal field to generate evaporation gas, and the evaporation gas passes through the guiding channel from the evaporation gas outlet to reach a preset evaporation area of a substrate to be evaporated;

the plane of the vapor deposition gas outlet is parallel to the plane of the substrate to be vapor deposited, the height difference between the plane of the vapor deposition gas outlet and the plane of the substrate to be vapor deposited is a first distance, and the distance between the orthographic projection point of the center of the vapor deposition gas outlet on the plane of the substrate to be vapor deposited and the center of the substrate to be vapor deposited is a second distance;

the included angle between the air flow direction of the vapor deposition gas in the guide channel and the plane where the vapor deposition gas outlet is located is larger than or equal to the arctangent function value of the ratio of the first distance to the second distance and smaller than or equal to a preset angle, the complement angle of the preset angle is the arctangent function value of the ratio of the first distance to the third distance, the third distance is equal to the difference value between the distance from the center of the substrate to be vapor deposited to the edge of the substrate to be vapor deposited and the second distance, and the second distance and the third distance are in the same straight line and are positioned on the same side of the center of the substrate to be vapor deposited.

Optionally, the value of the first distance is greater than or equal to 100mm and less than or equal to 720mm;

preferably, the value of the first distance is greater than or equal to 300mm and less than or equal to 720mm;

the value of the second distance is more than or equal to 50mm and less than or equal to 1600mm;

preferably, the value of the second distance is greater than or equal to 50mm and less than or equal to 410mm.

Optionally, the evaporation gas flow guiding device comprises a middle channel part and an edge extension part surrounding the middle channel part, the middle channel part comprises at least two parallel baffles, and the inclination angle of the baffles is equal to the included angle between the gas flow direction of the evaporation gas in the guiding channel and the plane of the evaporation gas outlet;

the space between the baffles is the guide channel;

the edge extension is connected with the vapor deposition gas outlet.

Optionally, the vapor deposition gas flow guiding device and the vapor deposition source storage device are integrally formed.

Optionally, a groove is formed in the side wall of the evaporation gas outlet, a protruding structure is arranged on one side, in contact with the side wall of the evaporation gas outlet, of the edge extension portion, and the protruding structure is located in the groove.

Optionally, the side wall of evaporation gas outlet is provided with the slide, edge extension portion with the side of evaporation gas outlet's lateral wall contact is provided with the slider, the slider is located in the slide, the slider can slide in the slide.

Optionally, the edge extension portion includes a first connection portion and a second connection portion, the first connection portion is connected with the baffle, the second connection portion is connected with the first connection portion, the second connection portion surrounds the evaporation gas outlet, so that the edge extension portion is buckled on the evaporation gas outlet.

Optionally, the second connection portion and the vapor deposition gas outlet are spaced a predetermined distance apart from each other, so that the vapor deposition gas flow guiding device can rotate relative to the vapor deposition source storage device.

Optionally, the high temperature resistant temperature of the vapor deposition gas flow guiding device is greater than or equal to the high temperature resistant temperature of the vapor deposition source storage device.

Optionally, the evaporation source storage device comprises a crucible, the crucible is located in a crucible source, the crucible source is used for forming a thermal field, the thermal field formed by the crucible source can be conducted to the evaporation gas flow guiding device through the crucible, so that a circulating surrounding type thermal field is formed, and the evaporation material is prevented from adhering to the evaporation gas flow guiding device.

In the vapor deposition device provided by the embodiment of the invention, the vapor deposition source storage device is provided with the vapor deposition gas outlet, the vapor deposition gas flow guide device is arranged at the vapor deposition gas outlet, the included angle gamma between the gas flow direction of the vapor deposition gas in the guide channel and the plane of the vapor deposition gas outlet is larger than or equal to the arctangent function value of the ratio of the first distance to the second distance and smaller than or equal to the preset angle, the complement angle of the preset angle is the arctangent function value of the ratio of the first distance to the third distance, the third distance is equal to the difference value between the distance from the center to the edge of the substrate to be vapor deposited and the second distance, the second distance and the third distance are in the same straight line and are positioned on the same side of the center of the substrate to be vapor deposited, so that the vapor deposition material is vaporized to generate vapor deposition gas under a thermal field, the vapor deposition gas reaches the substrate to be vapor deposited through the guide channel from the vapor deposition gas outlet, the vapor deposition range is the whole substrate to be vapor deposited, and the situation that the vapor deposition material directly reaches the substrate to be vapor deposited, and most of the vapor deposition material is vapor deposited to the inner wall of the chamber and other places can be avoided. In the design process of the vapor deposition device, the air flow direction of vapor deposition gas in the guide channel can be reasonably set according to the positions of the vapor deposition gas outlet and the center of the substrate to be vapor deposited, so that the accuracy that the vapor deposition gas reaches the substrate to be vapor deposited from the vapor deposition gas outlet through the guide channel is further improved, the utilization rate of vapor deposition materials is further improved, and the cost of the vapor deposition process is further reduced.

It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural view of an evaporation device according to an embodiment of the present invention;

fig. 2 is a schematic structural view of a right triangle formed by the center of the vapor deposition gas outlet and the center of the preset vapor deposition area in fig. 1;

FIG. 3 is a schematic view of the vapor deposition apparatus of FIG. 1;

fig. 4 is a schematic view of the vapor deposition gas flow guide device in fig. 3;

FIG. 5 is a schematic cross-sectional view of the vapor deposition gas flow guide and vapor deposition gas outlet of FIG. 3 in the direction A1-A2;

FIG. 6 is a schematic cross-sectional view of the vapor deposition gas flow guide and vapor deposition gas outlet of FIG. 3 in the direction of the second A1-A2;

FIG. 7 is a schematic cross-sectional view of the vapor deposition gas flow direction device and the vapor deposition gas outlet of FIG. 3 in the direction of the third A1-A2;

FIG. 8 is a schematic cross-sectional view of the vapor deposition gas flow direction device and the vapor deposition gas outlet of FIG. 3 in the fourth direction A1-A2;

fig. 9 is a distribution diagram of 13 evaporation film thickness value test points of a substrate to be evaporated according to an embodiment of the present invention;

fig. 10 is a schematic structural diagram of an evaporation source storage device provided in the prior art.

Detailed Description

In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

In order to improve the utilization rate of the evaporation material, the embodiment of the invention provides the following technical scheme:

referring to fig. 1 and 2, fig. 1 is a schematic structural view of an evaporation device according to an embodiment of the present invention, and fig. 2 is a schematic structural view of a right triangle formed by a center of an evaporation gas outlet and a center of a preset evaporation region in fig. 1, the evaporation device includes: a vapor deposition source storage device 001, the vapor deposition source storage device 001 being provided with a vapor deposition gas outlet 10; the vapor deposition gas flow guiding device 002, the vapor deposition gas flow guiding device 002 is arranged at the vapor deposition gas outlet 10, the vapor deposition gas flow guiding device 002 comprises at least one guiding channel 20, the vapor deposition material is placed in the vapor deposition source storage device 001, the vapor deposition material is evaporated under a thermal field to generate vapor deposition gas, and the vapor deposition gas passes through the guiding channel 20 from the vapor deposition gas outlet 10 to reach a preset vapor deposition area of the substrate 003 to be vapor deposited; the plane of the vapor deposition gas outlet 10 and the plane of the substrate 003 to be vapor deposited are arranged in parallel, the difference in height between the plane of the vapor deposition gas outlet 10 and the plane of the substrate 003 to be vapor deposited is a first distance H (the first distance H is the distance in the Y direction in fig. 1), and the distance between the center 1a of the vapor deposition gas outlet 10 and the orthographic projection point 1b of the plane of the substrate 003 to be vapor deposited and the center 30 of the substrate 003 to be vapor deposited is a second distance D; the included angle gamma between the flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 is greater than or equal to the arctan function value alpha (arctan (H/D)) of the ratio of the first distance H to the second distance D, and less than or equal to the preset angle beta, the complement angle of the preset angle beta is the arctan function value (arctan (H/(L-D)) of the ratio of the first distance H to the third distance (L-D), the third distance is equal to the difference between the distance from the center 30 to the edge of the substrate 003 to be vapor deposited and the second distance D, and the second distance D and the third distance (L-D) are on the same straight line and are located on the same side of the center 30 of the substrate 003 to be vapor deposited.

The distance between the orthographic projection point 1b of the center 1a of the vapor deposition gas outlet 10 on the plane of the substrate 003 to be vapor deposited and the center 30 of the substrate 003 to be vapor deposited is the second distance D. The distance between the center 30 of the substrate to be vapor deposited 003 and the center 1a of the vapor deposition gas outlet 10 at the orthographic projection point 31 of the plane of the vapor deposition gas outlet 10 is also the second distance D.

In this embodiment, the vapor deposition material is generally an organic material.

In the present embodiment, the included angle γ between the flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 is greater than or equal to the value α (arctan (H/D)) of the ratio of the first distance H to the second distance D, and is smaller than or equal to the preset angle β, the complement angle of the preset angle β is the value α (arctan (H/(L-D)) of the ratio of the first distance H to the third distance, and the third distance is equal to the difference between the distance from the center 30 to the edge of the substrate 003 to be vapor deposited and the second distance D, and the second distance D and the third distance (L-D) are on the same straight line and are on the same side as the center 30 of the substrate 003 to be vapor deposited.

The included angle gamma between the air flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 is larger than beta, the vapor deposition material is evaporated under a thermal field to generate vapor deposition gas, and the vapor deposition gas passes through the guide channel 20 from the vapor deposition gas outlet 10 to the outside of the substrate 003 to be vapor deposited, so that the waste of the vapor deposition material is caused, and the utilization rate of the vapor deposition material is reduced. Therefore, the included angle γ between the flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 is smaller than or equal to β, so that the vapor deposition material is controlled within the substrate 003 to be vapor deposited.

The included angle gamma between the air flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 is smaller than alpha, the vapor deposition air flow guide device 002 is arranged at the vapor deposition gas outlet 10, the vapor deposition material is evaporated under a thermal field to generate vapor deposition gas, the vapor deposition gas cannot be completely evaporated onto the substrate 001 to be evaporated through the guide channel 20 from the vapor deposition gas outlet 10, and the brightness uniformity and the chromaticity uniformity of the vapor deposition substrate 003 are reduced.

Assuming that the substrate 003 to be evaporated is stationary, only one evaporation device is provided, and evaporation gas passes through the guide channel 20 from the evaporation gas outlet 10 to reach the substrate 003 to be evaporated, and the evaporation range is only a partial region of the substrate 003 to be evaporated. The number of evaporation devices needs to be increased, the plurality of evaporation devices are arranged around the center 30 of the substrate 003 to be evaporated, so that the evaporation material can be evaporated to generate evaporation gas under a thermal field, the evaporation gas reaches the substrate 003 to be evaporated from the evaporation gas outlet 10 through the guide channel 20, and the evaporation range is the whole substrate 003 to be evaporated. Illustratively, in fig. 1, vapor deposition devices are provided at the first position L1, the second position L2, the third position L3, and the fourth position L4.

If the substrate 003 to be evaporated is rotated about the center 30 of the substrate 003 to be evaporated as a rotation center in the plane thereof, an included angle γ between the direction of the flow of the evaporation gas in the guide channel 20 and the plane of the evaporation gas outlet 10 is set to be greater than or equal to α and less than or equal to β, so that the evaporation material evaporates to generate the evaporation gas under the thermal field, the evaporation gas passes through the guide channel 20 from the evaporation gas outlet 10 to reach the substrate 003 to be evaporated, and the evaporation range is the whole substrate 003 to be evaporated.

In the vapor deposition device provided by the embodiment of the invention, the vapor deposition source storage device 001 is provided with the vapor deposition gas outlet 10, the vapor deposition gas flow guiding device 002 is arranged at the vapor deposition gas outlet 10, the included angle gamma between the gas flow direction of the vapor deposition gas in the guiding channel 20 and the plane of the vapor deposition gas outlet 10 is larger than or equal to the arctan function value alpha (arctan (H/D)) of the ratio of the first distance H to the second distance D, smaller than or equal to the preset angle beta, the complement angle of the preset angle beta is the arctan function value (arctan (H/(L-D)) of the ratio of the first distance H to the third distance, the third distance is equal to the difference between the distance from the center 30 to the edge of the substrate 003 to be vapor deposited and the second distance D, the second distance D and the third distance (L-D) are on the same straight line and are positioned on the same side of the center 30 of the substrate 003 to be vapor deposited, the vapor deposition material is evaporated under a thermal field to generate vapor deposition gas, the vapor deposition gas reaches the substrate 003 to be vapor deposited from the vapor deposition gas outlet 10 through the guide channel 20, the vapor deposition range is the whole substrate 003 to be vapor deposited, the situation that the vapor deposition material directly reaches the substrate 003 to be vapor deposited from the vapor deposition gas outlet 10 and most of the vapor deposition material is vapor deposited on the inner wall of a cavity and the like can be avoided, therefore, the technical scheme of the embodiment of the invention improves the utilization rate of the vapor deposition material and further reduces the cost of the vapor deposition process, in the design process of the vapor deposition device, the airflow direction of the vapor deposition gas in the guide channel 20 can be reasonably set according to the positions of the vapor deposition gas outlet 10 and the center 30 of the substrate 003 to be vapor deposited, thereby further improving the accuracy of the vapor deposition gas reaching the substrate 003 to be vapor deposited from the vapor deposition gas outlet 10 through the guide channel 20, the utilization rate of the evaporation material is further improved, and the cost of the evaporation process is further reduced.

Alternatively, on the basis of the above technical solution, referring to fig. 1, at least one evaporation device is disposed around the center 30 of the substrate 003 to be evaporated. Illustratively, in fig. 1, vapor deposition devices are provided at the first position L1, the second position L2, the third position L3, and the fourth position L4.

Illustratively, 4 vapor deposition devices are disposed around the center 30 of the substrate 003 to be vapor deposited in fig. 1. The more vapor deposition devices that are provided around the substrate 003 to be vapor deposited, the shorter the vapor deposition time, and the higher the vapor deposition efficiency.

Optionally, on the basis of the above technical solution, the evaporation source storage device 001 includes a crucible, the crucible is located in the crucible source, the crucible source is used for forming a thermal field, the thermal field formed by the crucible source can be conducted to the evaporation gas flow guiding device 002 through the crucible, so as to form a circulating surrounding thermal field, and prevent the evaporation material from adhering to the evaporation gas flow guiding device 002, thereby also contributing to improving the utilization rate of the evaporation material, and further reducing the cost of the evaporation process.

To verify the vapor deposition effect of the vapor deposition device provided in this example, two vapor deposition source storage devices 001 having the same mass were prepared, and the two vapor deposition source storage devices 001 were crucible a and crucible B, respectively. In the vapor deposition process, for example, in fig. 1, the crucible a and the crucible B are located at the same position, for example, any one of the first position L1, the second position L2, the third position L3, and the fourth position L4 in fig. 1, and when the crucible a is used for vapor deposition, the substrate to be vapor deposited is the substrate 0031 to be vapor deposited, and when the crucible B is used for vapor deposition, the substrate to be vapor deposited is the substrate 0032 to be vapor deposited. The same batch of vapor deposition material of the same weight is charged into crucible a and crucible B, wherein vapor deposition gas outlet 10 of crucible a is provided with vapor deposition gas flow guide 002 as shown in fig. 3 (crucible is exemplified as vapor deposition source storage device 001 in fig. 3), and vapor deposition gas outlet 10 of crucible B is not provided with vapor deposition gas flow guide 002 as shown in fig. 10. Crucible A andwhen the crucible B is added into the evaporation process chamber, it is ensured that the included angle γ between the flow direction of the evaporation gas in the crucible a guide channel 20 and the plane of the evaporation gas outlet 10 is equal to the arctan function value α (arctan (H/D)) of the ratio of the first distance H to the second distance D. The substrate to be vapor deposited corresponding to the crucible B is the substrate to be vapor deposited 0032, and the vapor deposition material of the crucible B directly reaches the substrate to be vapor deposited 0032 from the vapor deposition gas outlet 10. Then, vapor deposition was performed under the same conditions using crucible a of fig. 3 and crucible B of fig. 10, and after vapor deposition was completed, film thickness data of 13 vapor deposition film thickness value test points on the substrate to be vapor deposited 0031 and the substrate to be vapor deposited 0032 were measured, as shown in fig. 9. As is clear from the calculation, referring to the data in tables 1 to 3, the utilization ratio (2.89%) of the vapor deposition material in crucible a to which vapor deposition gas flow guide 002 was attached was improved by 18.69% as compared with the utilization ratio (2.35%) of the vapor deposition material in crucible B. In this embodiment, the test points of the thickness of the deposited film with the numbers 1 to 13 may be referred to as the numbers 1 to 13. Wherein, the set values of the vapor deposition film thickness of the No. 1-13 positions are all

TABLE 1 thickness values of vapor deposition film at positions 1 to 8 of substrate to be vapor deposited

TABLE 2 thickness values of vapor deposition film at positions 9-13 of substrate to be vapor deposited

TABLE 3 average value of vapor deposition film thickness at No. 1-13 positions of substrate to be vapor deposited, weighing before vapor deposition of substrate to be vapor deposited, weighing after vapor deposition of substrate to be vapor deposited, consumption of thick vapor deposition material of substrate to be vapor deposited, and utilization ratio of vapor deposition material

Optionally, on the basis of the technical scheme, the value of the first distance H is greater than or equal to 100mm and less than or equal to 720mm; the value of the second distance D is greater than or equal to 50mm and less than or equal to 1600mm.

Specifically, when the value of the first distance H is greater than or equal to 100mm and less than or equal to 720mm; preferably greater than or equal to 300mm and less than or equal to 720mm. The value of the second distance D is greater than or equal to 50mm and less than or equal to 1600mm, preferably, the value of the second distance D is greater than or equal to 50mm and less than or equal to 410mm, and the accuracy of vapor deposition gas reaching the substrate 003 to be vapor deposited from the vapor deposition gas outlet 10 through the guide channel 20 is in an optimal range, so that the utilization rate of vapor deposition materials can be improved, and the cost of the vapor deposition process is reduced.

When the first distance H is too small to be smaller than 100mm, the included angle between the flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 is too small, which affects the brightness and chromaticity stability of the vapor deposition region. When the first distance H is too large, so as to be greater than 720mm, an included angle between the flow direction of the vapor deposition gas in the guide passage 20 and the plane of the vapor deposition gas outlet 10 is too large, resulting in waste of the vapor deposition material.

When the second distance D is too small to be smaller than 50mm, the included angle between the flow direction of the vapor deposition gas in the guide passage 20 and the plane of the vapor deposition gas outlet 10 is too large, resulting in waste of the vapor deposition material. When the second distance D is too large, so that it is greater than 1600mm, the included angle between the flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 is too small, which affects the brightness and chromaticity stability of the vapor deposition region.

The too small or too large included angle between the air flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 can affect the accuracy of the vapor deposition gas reaching the substrate 003 to be vapor deposited from the vapor deposition gas outlet 10 through the guide channel 20, so that the vapor deposition gas cannot be in the optimal range, thereby reducing the utilization rate of the vapor deposition material and increasing the cost of the vapor deposition process.

Alternatively, referring to fig. 3 and fig. 4, fig. 3 is a schematic structural view of the vapor deposition device in fig. 1, and fig. 4 is a schematic structural view of the vapor deposition gas flow guiding device in fig. 3, where the vapor deposition gas flow guiding device 002 includes a middle channel portion 21 and an edge extension portion 22 surrounding the middle channel portion 21, the middle channel portion 21 includes at least two parallel baffles 210, and an inclination angle of the baffles 210 is equal to an included angle γ between a gas flow direction of vapor deposition gas in the guiding channel 20 and a plane of the vapor deposition gas outlet 10; the space between the baffles 210 is the guide channel 20. The edge extension 22 is connected to the vapor deposition gas outlet 10.

Specifically, the edge extension 22 is connected to the vapor deposition gas outlet 10 to connect the vapor deposition gas flow guide 002 to the vapor deposition source storage device 001.

The space between the baffles 210 is the guide channel 20, and the inclination angle of the baffles 210 and the included angle gamma between the air flow direction of the vapor deposition gas in the guide channel 20 and the plane of the vapor deposition gas outlet 10 are equal, so that the vapor deposition gas can accurately reach the substrate 003 to be vapor deposited through the space between the baffles 210 (the guide channel 20) from the vapor deposition gas outlet 10.

Alternatively, on the basis of the above technical solution, the vapor deposition gas flow guiding device 002 and the vapor deposition source storage device 001 are integrally formed.

Specifically, the vapor deposition gas flow guide 002 and the vapor deposition source storage device 001 are integrally formed, and the vapor deposition gas outlet 10 of the vapor deposition source storage device 001 and the edge extension 22 of the vapor deposition gas flow guide 002 do not need to be provided with a connection structure, so that the structure of the vapor deposition device is simplified.

Optionally, on the basis of the above technical solution, referring to fig. 5, fig. 5 is a schematic cross-sectional structure of the vapor deposition gas flow guiding device and the vapor deposition gas outlet in the first direction A1-A2 in fig. 3, a groove 11 is provided on a sidewall of the vapor deposition gas outlet 10, a protrusion structure 220 is provided on a side where the edge extension 22 contacts with the sidewall of the vapor deposition gas outlet 10, and the protrusion structure 220 is located in the groove 11.

Specifically, the vapor deposition gas flow guiding device 002 and the vapor deposition source storage device 001 are two structural members, the protrusion structure 220 provided on the edge extension 22 is located in the groove 11 of the vapor deposition gas outlet 10, and the protrusion structure 220 is clamped in the groove 11, so as to realize connection between the edge extension 22 of the vapor deposition gas flow guiding device 002 and the vapor deposition gas outlet 10 of the vapor deposition source storage device 001.

Optionally, on the basis of the above technical solution, referring to fig. 6, fig. 6 is a schematic cross-sectional structure of the vapor deposition gas flow guiding device and the vapor deposition gas outlet in the second direction A1-A2 in fig. 3, a slide 12 is provided on a sidewall of the vapor deposition gas outlet 10, a slider 221 is provided on a side where the edge extension 22 contacts with the sidewall of the vapor deposition gas outlet 10, the slider 221 is located in the slide 12, and the slider 221 can slide in the slide 12.

Specifically, the vapor deposition gas flow guiding device 002 and the vapor deposition source storage device 001 are two structural members, the slider 221 provided on the edge extension 22 is located in the slide 12 of the vapor deposition gas outlet 10, the slider 221 is locked in the groove 11, the slider 221 can also slide in the slide 12, and the vapor deposition gas flow guiding device 002 can rotate in the slide 12 of the vapor deposition gas outlet 10 while the edge extension 22 of the vapor deposition gas flow guiding device 002 is connected with the vapor deposition gas outlet 10 of the vapor deposition source storage device 001. When a plurality of vapor deposition devices are disposed around the center 30 of the substrate 003 to be vapor deposited 003, the vapor deposition air flow guiding device 002 can be directly rotated to adjust the vapor deposition air flow direction without rotating the entire vapor deposition source storage device 001.

Alternatively, referring to fig. 7, fig. 7 is a schematic cross-sectional structure of the vapor deposition gas flow guiding device and the vapor deposition gas outlet in the third direction A1-A2 of fig. 3, and the edge extension 22 includes a first connection portion 22a and a second connection portion 22b, where the first connection portion 22a is connected to the baffle 210, the second connection portion 22b is connected to the first connection portion 22a, and the second connection portion 22b is disposed around the vapor deposition gas outlet 10, so that the edge extension 22 is fastened on the vapor deposition gas outlet 10.

Specifically, the vapor deposition gas flow guiding device 002 and the vapor deposition source storage device 001 are two structural members, and the second connection portion 22b and the first connection portion 22a of the edge extension portion 22 have a preset included angle, so that the edge extension portion 22 is fastened on the vapor deposition gas outlet 10, and the edge extension portion 22 of the vapor deposition gas flow guiding device 002 is connected to the vapor deposition gas outlet 10 of the vapor deposition source storage device 001.

Alternatively, referring to fig. 8, fig. 8 is a schematic cross-sectional view of the vapor deposition gas flow guiding device and the vapor deposition gas outlet in the fourth direction A1-A2 in fig. 3, where the second connecting portion 22b is spaced from the vapor deposition gas outlet 10 by a predetermined distance, so that the vapor deposition gas flow guiding device 002 can rotate relative to the vapor deposition source storage device 001.

Specifically, unlike the vapor deposition gas flow guiding device 002 shown in fig. 7, in the vapor deposition gas flow guiding device 002 shown in fig. 8, the second connection portion 22b is disposed around the vapor deposition gas outlet 10, and the second connection portion 22b and the vapor deposition gas outlet 10 are spaced apart from each other by a predetermined distance, so that the vapor deposition gas flow guiding device 002 can rotate relative to the vapor deposition source storage device 001. When a plurality of vapor deposition devices are arranged around the center 30 of the substrate 003 to be vapor deposited, the vapor deposition air flow guiding device 002 can be directly rotated to adjust the vapor deposition air flow direction without rotating the whole vapor deposition source storage device 001.

Optionally, on the basis of the above technical solution, the high temperature resistant temperature of the vapor deposition airflow guiding device 002 is greater than or equal to the high temperature resistant temperature of the vapor deposition source storage device 001, so that the vapor deposition airflow guiding device 002 can not melt and deform under the action of the thermal field in the process that the vapor deposition material in the vapor deposition source storage device 001 is evaporated under the thermal field to generate vapor deposition gas.

The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.

Claims

1. An evaporation device, comprising:

2. The vapor deposition device according to claim 1, wherein the first distance has a value of 100mm or more and 720mm or less;

3. The vapor deposition apparatus according to claim 1, wherein the vapor deposition gas flow guiding device includes a middle passage portion and an edge extension portion surrounding the middle passage portion, the middle passage portion includes at least two baffles arranged in parallel, and an inclination angle of the baffles is equal to an included angle between a gas flow direction of vapor deposition gas in the guiding passage and a plane in which the vapor deposition gas outlet is located;

the space between the baffles is the guide channel;

the edge extension is connected with the vapor deposition gas outlet.

4. A vapor deposition apparatus according to claim 1 or 3, wherein the vapor deposition gas flow guide device and the vapor deposition source storage device are integrally formed.

5. A vapor deposition apparatus according to claim 3, wherein a side wall of the vapor deposition gas outlet is provided with a groove, and a side of the edge extension in contact with the side wall of the vapor deposition gas outlet is provided with a projection structure, the projection structure being located in the groove.

6. A vapor deposition apparatus according to claim 3, wherein a side wall of the vapor deposition gas outlet is provided with a slide, a side of the edge extension in contact with the side wall of the vapor deposition gas outlet is provided with a slider, the slider is located in the slide, and the slider is slidable in the slide.

7. The vapor deposition apparatus according to claim 3, wherein the edge extension includes a first connecting portion and a second connecting portion, the first connecting portion and the baffle are connected, the second connecting portion and the first connecting portion are connected, and the second connecting portion is disposed around the vapor deposition gas outlet so that the edge extension is caught on the vapor deposition gas outlet.

8. The vapor deposition apparatus according to claim 7, wherein the second connection portion and the vapor deposition gas outlet are spaced apart by a predetermined distance so that the vapor deposition gas flow guiding device can rotate with respect to the vapor deposition source storage device.

9. The vapor deposition apparatus according to claim 1, wherein the high temperature resistance temperature of the vapor deposition gas flow direction device is greater than or equal to the high temperature resistance temperature of the vapor deposition source storage device.

10. The vapor deposition apparatus according to claim 1, wherein the vapor deposition source storage device comprises a crucible located in a crucible source for forming a thermal field, the thermal field formed by the crucible source being conducted to the vapor deposition gas flow guide device through the crucible to form a circulating surrounding thermal field, preventing deposition material from adhering to the vapor deposition gas flow guide device.