CN116143508A - 一种低介电常数高温度稳定型微波介质陶瓷及其制备方法 - Google Patents

一种低介电常数高温度稳定型微波介质陶瓷及其制备方法 Download PDF

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CN116143508A
CN116143508A CN202211642885.6A CN202211642885A CN116143508A CN 116143508 A CN116143508 A CN 116143508A CN 202211642885 A CN202211642885 A CN 202211642885A CN 116143508 A CN116143508 A CN 116143508A
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吉岸
王晓慧
金镇龙
韩伟东
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Abstract

本发明是一种高温度稳定型低介低损耗微波介质陶瓷及其制备方法，化学组成式为：aMgO‑bCaO‑cSrO‑dTiO2‑eSiO2‑fY2O3‑gRn2O3，Rn为稀土元素，40％≤a≤50％、4％≤b≤8％、0.4％≤c≤1％、4％≤d≤8％、15％≤e≤25％、5％≤f≤10％、5％≤g≤10％；烧结温度为1300‑1350℃。本发明的优点：组成及制备方法设计合理，所得微波介质陶瓷材料微波性能良好、介电常数为9.5±0.5，谐振频率温度系数近零可调、≤±10ppm/℃；制备方法操作简单，重复性好，对设备要求低，十分适合推广使用。

Description

一种低介电常数高温度稳定型微波介质陶瓷及其制备方法
技术领域
本发明涉及的是一种低介电常数高温度稳定型微波介质陶瓷及其制备方法，属于电子陶瓷及其制备技术领域。
背景技术
微波介质陶瓷是指应用于微波频段(主要是300MHz-300GHz频段)电路中作为介质材料并完成一种或多种功能的陶瓷材料，是制造微波介质滤波器和谐振器的关键材料。随着移动通信事业的迅速发展，新型功能陶瓷材料制成介质谐振器、介质天线、双工器、介质导波回路、介质稳频振荡器等微波元件已被广泛应用于移动通信、卫星电视广播通信、散射通信军用雷达和卫星导航定位系统等众多领域。近年来由于移动通信、航天、军事、现代医学等领域的快速发展，对微波介质陶瓷材料也提出了更高的要求，因此，寻找、制备与研究具有合适介电常数、低损耗、近零谐振频率温度系数、低成本环保的新型微波介质陶瓷成为了人们当前研究的热点与重点。
鉴于现有通讯频率往高频移动甚多，目前5G通讯所用频率较高者已经达到了20-30GHz。在通讯元器件尺寸受限的条件下，为了适应很高的通讯频率，需求高温度稳定型的低介电常数介质材料，但是现有技术中的低介电常数的介质材料，其温度系数一般都超出±20ppm/℃以外，无法满足使用需要。
比如CN113149645A一种低温烧结温度稳定型复合微波介质陶瓷及其制备方法，其谐振频率温度系数范围为±30ppm/℃。
发明内容
本发明提出的是一种低介电常数高温度稳定型微波介质陶瓷及其制备方法，其目的旨在克服现有技术存在的上述不足，在保证良好微波性能的前提下实现谐振频率温度系数近零可调。
本发明的技术解决方案：一种高温度稳定型低介低损耗微波介质陶瓷，化学组成式为：aMgO-bCaO-cSrO-dTiO2-eSiO2-fY2O3-gRn2O3，其中Rn为稀土元素，摩尔比例为40％≤a≤50％、4％≤b≤8％、0.4％≤c≤1％、4％≤d≤8％、15％≤e≤25％、5％≤f≤10％、5％≤g≤10％；其介电常数为9.5±0.5，保证了良好的微波性能，谐振频率温度系数为≤±10ppm/℃，实现了谐振频率温度系数近零可调，Qf为60000-70000GHz。
其制备方法，包括以下步骤：
(1)按照所述的aMgO-bCaO-dSrO-dTiO2-eSiO2-fY2O3-gRn2O3中的摩尔比取MgO、TiO2、CaCO3、SrCO3、SiO2、Y2O3、Rn2O3混合后球磨、烘干，然后预烧，得到主相材料；
(2)将步骤(1)所得主相材料再次球磨、烘干、造粒，成型烧结、烧结温度为1300-1350℃，最终得到高温度稳定型低介低损耗微波介质陶瓷。
本发明的优点：组成及制备方法设计合理，所得微波介质陶瓷材料微波性能良好、介电常数为9.5±0.5，谐振频率温度系数近零可调、≤±10ppm/℃；制备方法操作简单，重复性好，对设备要求低，十分适合推广使用。
具体实施方式
下面结合实施例和具体实施方式对本发明作进一步详细的说明。
实施例1-4及对比例1-3
一种高温度稳定型低介电常数低损耗微波介质陶瓷，化学组成式为aMgO-bCaO-dSrO-dTiO2-eSiO2-fY2O3-gRn2O3，其中Rn为稀土元素(优选为La)，a、b、c、d、e、f、g为摩尔比例含量。各实施例及对比例摩尔比例按下表设置，各实施例及对比例介电常数、谐振频率温度系数、Qf值分别如下表所示。
其制备方法，包括如下步骤：
(1)按照aMgO-bCaO-dSrO-dTiO2-eSiO2-fY2O3-gRn2O3中的摩尔比取MgO、Ti O2、CaCO3、SrCO3、S iO2、Y2O3、Rn2O3混合后球磨，烘干，然后预烧，得到主相材料；
(2)将步骤(1)所得材料再次球磨、烘干、造粒，成型烧结、烧结温度如下表所示，最终得到成品微波介质陶瓷。
Figure BDA0004008345560000031
根据上表可见，本发明各实施例介电常数为9.5±0.5，Qf为60000-70000GHz，谐振频率温度系数≤±10ppm/℃，明显优于各对比例。
以上所述的仅是本发明的优选实施方式，应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。

Claims (3)

1.一种高温度稳定型低介低损耗微波介质陶瓷，其特征在于，所述微波介质陶瓷的化学组成式为：aMgO-bCaO-cSrO-dTiO2-eSiO2-fY2O3-gRn2O3，其中Rn为稀土元素，摩尔比例为40％≤a≤50％、4％≤b≤8％、0.4％≤c≤1％、4％≤d≤8％、15％≤e≤25％、5％≤f≤10％、5％≤g≤10％；所述微波介质陶瓷的介电常数为9.5±0.5、谐振频率温度系数为≤±10ppm/℃、Qf为60000-70000GHz。
2.如权利要求2所述的一种高温度稳定型低介低损耗微波介质陶瓷，其特征在于，所述的Rn为La。
3.如权利要求1或2所述的一种高温度稳定型低介低损耗微波介质陶瓷的制备方法，其特征在于，包括以下步骤：
(1)按照所述的aMgO-bCaO-dSrO-dTiO2-eSiO2-fY2O3-gRn2O3中的摩尔比取MgO、TiO2、CaCO3、SrCO3、SiO2、Y2O3、Rn2O3混合后球磨、烘干，然后预烧，得到主相材料；
(2)将步骤(1)所得主相材料再次球磨、烘干、造粒，成型烧结、烧结温度为1300-1350℃，最终得到高温度稳定型低介低损耗微波介质陶瓷。
CN202211642885.6A 2022-12-20 2022-12-20 一种低介电常数高温度稳定型微波介质陶瓷及其制备方法 Pending CN116143508A (zh)

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