CN116140272A - High-efficiency cleaning method for large-size monocrystalline silicon wafer - Google Patents
High-efficiency cleaning method for large-size monocrystalline silicon wafer Download PDFInfo
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- CN116140272A CN116140272A CN202310167590.6A CN202310167590A CN116140272A CN 116140272 A CN116140272 A CN 116140272A CN 202310167590 A CN202310167590 A CN 202310167590A CN 116140272 A CN116140272 A CN 116140272A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 219
- 238000004140 cleaning Methods 0.000 title claims abstract description 140
- 238000000034 method Methods 0.000 title claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000008213 purified water Substances 0.000 claims abstract description 103
- 238000005406 washing Methods 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000428 dust Substances 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 239000002923 metal particle Substances 0.000 claims abstract description 10
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 126
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 84
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 68
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 68
- 239000004115 Sodium Silicate Substances 0.000 claims description 67
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 67
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 67
- 238000011010 flushing procedure Methods 0.000 claims description 53
- 229910021645 metal ion Inorganic materials 0.000 claims description 9
- 230000003749 cleanliness Effects 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a high-efficiency cleaning method for a large-size monocrystalline silicon wafer, which relates to the technical field of monocrystalline silicon wafer cleaning, and aims at solving the problems that the existing high-efficiency cleaning method for the large-size monocrystalline silicon wafer cannot clean the solution remained on the surface of the monocrystalline silicon wafer after cleaning the monocrystalline silicon wafer by using different solutions, the cleanliness of the surface of the monocrystalline silicon wafer is insufficient, the yield of the monocrystalline silicon wafer after texturing cannot be ensured and the use effect is not ideal, and the method comprises the following steps: s1: pretreatment cleaning: and (3) washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece. The invention has reasonable design, can clean the solution remained on the surface of the monocrystalline silicon wafer with high efficiency after cleaning the monocrystalline silicon wafer by using different solutions, has higher cleanliness on the surface of the monocrystalline silicon wafer, can ensure the yield of the monocrystalline silicon wafer after texturing, has good use effect and is worthy of popularization and use.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon wafer cleaning, in particular to a high-efficiency cleaning method for large-size monocrystalline silicon wafers.
Background
Monocrystalline silicon wafers are monocrystalline silicon, a crystal having a substantially complete lattice structure. Monocrystalline silicon has a diamond lattice, is hard and brittle, has metallic luster, can conduct electricity, has lower conductivity than metal, increases with temperature rise, and has semiconductor properties. A trace amount of group IIIA elements are doped into monocrystalline silicon to form a P-type semiconductor, a trace amount of group VA elements are doped to form an N-type semiconductor, the N-type semiconductor and the P-type semiconductor are combined together, and then the solar cell can be manufactured to convert radiation energy into electric energy. Monocrystalline silicon is an important semiconductor material, and is a raw material for manufacturing semiconductor silicon devices, and is used for manufacturing high-power rectifiers, high-power transistors, diodes, switching devices and the like. Is a promising material for energy development. The monocrystalline silicon wafer needs to be cleaned after a series of processing procedures, the cleaning purpose is to eliminate various pollutants adsorbed on the surface of the silicon wafer, a suede structure (wool making) capable of reducing the reflection of sunlight on the surface is manufactured, and the cleaning degree directly influences the yield and the reliability of the battery piece. In order to improve the cleaning efficiency of large-sized monocrystalline silicon wafers, a high-efficiency cleaning method for large-sized monocrystalline silicon wafers is needed.
However, the existing high-efficiency cleaning method for large-size monocrystalline silicon wafers cannot clean the solution remained on the surface of the monocrystalline silicon wafers after cleaning the monocrystalline silicon wafers by using different solutions, the cleanliness of the surface of the monocrystalline silicon wafers is insufficient, the yield of the monocrystalline silicon wafers after texturing cannot be ensured, and the use effect is not ideal.
Disclosure of Invention
The invention aims to solve the defects that the existing high-efficiency cleaning method for large-size monocrystalline silicon wafers cannot clean the solution remained on the surfaces of the monocrystalline silicon wafers after cleaning the monocrystalline silicon wafers by using different solutions, the cleanliness of the surfaces of the monocrystalline silicon wafers is insufficient, the yield of the monocrystalline silicon wafers after texturing cannot be ensured, and the use effect is not ideal.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a high-efficiency cleaning method for large-size monocrystalline silicon wafers comprises the following steps:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
In a preferred embodiment, the pressure of the flushing in S1 is 0.05-0.1Mpa, and the temperature of the purified water is 18-28 ℃.
In a preferred embodiment, the sodium hydroxide solution in S3 comprises sodium hydroxide and an appropriate amount of purified water, the concentration of sodium hydroxide is 42-47 g/l, and the washing time is 3-5 minutes.
In a preferred embodiment, the isopropanol solution in S5 comprises isopropanol with an appropriate amount of purified water, the concentration of isopropanol being 4-6 g/l, and the washing time being 25-35 minutes.
In a preferred embodiment, the sodium silicate solution in S7 comprises sodium silicate and a proper amount of purified water, wherein the concentration of sodium silicate is 2-4 g/l, and the washing time is 25-35 minutes.
In a preferred embodiment, the hydrofluoric acid solution in S9 includes hydrofluoric acid and a proper amount of purified water, the concentration of sodium silicate is 52-59 g/l, and the cleaning time is 1-2 minutes.
In a preferred embodiment, the hydrochloric acid solution in S11 comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 82-89 g/l, and the washing time is 3-5 minutes.
According to the high-efficiency cleaning method for the large-size monocrystalline silicon piece, the surfaces of the monocrystalline silicon piece are washed after the monocrystalline silicon piece is cleaned by using different pickling solutions, so that the cleanliness of the surfaces of the monocrystalline silicon piece is guaranteed, and the cleaning effect is good;
the invention has reasonable design, can clean the solution remained on the surface of the monocrystalline silicon wafer with high efficiency after cleaning the monocrystalline silicon wafer by using different solutions, has higher cleanliness on the surface of the monocrystalline silicon wafer, can ensure the yield of the monocrystalline silicon wafer after texturing, has good use effect and is worthy of popularization and use.
Detailed Description
The invention is further illustrated below in connection with specific embodiments.
Example 1
The invention provides a high-efficiency cleaning method for a large-size monocrystalline silicon wafer, which comprises the following steps:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
In the embodiment, the flushing pressure in S1 is 0.05-0.1Mpa, and the temperature of purified water is 18 ℃; the sodium hydroxide solution in S3 comprises sodium hydroxide and a proper amount of purified water, wherein the concentration of the sodium hydroxide is 42 g/L, and the cleaning time is 3 minutes; s5, the isopropanol solution comprises isopropanol and a proper amount of purified water, wherein the concentration of the isopropanol is 4 g/L, and the cleaning time is 25 minutes; s7, sodium silicate solution comprises sodium silicate and a proper amount of purified water, wherein the concentration of the sodium silicate is 2 g/L, and the cleaning time is 25 minutes; s9, hydrofluoric acid solution comprises hydrofluoric acid and a proper amount of purified water, wherein the concentration of sodium silicate is 52 g/L, and the cleaning time is 1 minute; and S11, the hydrochloric acid solution comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 82 g/L, the cleaning time is 3 minutes, and compared with the prior art, the cleaning efficiency is higher, and the yield is ensured.
Example two
The invention provides a high-efficiency cleaning method for a large-size monocrystalline silicon wafer, which comprises the following steps:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
In the embodiment, the flushing pressure in S1 is 0.05-0.1Mpa, and the temperature of purified water is 28 ℃; the sodium hydroxide solution in S3 comprises sodium hydroxide and a proper amount of purified water, wherein the concentration of the sodium hydroxide is 47 g/L, and the cleaning time is 5 minutes; s5, the isopropanol solution comprises isopropanol and a proper amount of purified water, wherein the concentration of the isopropanol is 6 g/L, and the cleaning time is 35 minutes; s7, sodium silicate solution comprises sodium silicate and a proper amount of purified water, wherein the concentration of the sodium silicate is 4 g/L, and the cleaning time is 35 minutes; s9, hydrofluoric acid solution comprises hydrofluoric acid and a proper amount of purified water, wherein the concentration of sodium silicate is 59 g/L, and the cleaning time is 2 minutes; the hydrochloric acid solution in S11 comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 89 g/L, the cleaning time is 5 minutes, and compared with the prior art, the cleaning efficiency is higher, and the yield is ensured
Example III
The invention provides a high-efficiency cleaning method for a large-size monocrystalline silicon wafer, which comprises the following steps:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
In the embodiment, the flushing pressure in S1 is 0.05-0.1Mpa, and the temperature of purified water is 20 ℃; the sodium hydroxide solution in S3 comprises sodium hydroxide and a proper amount of purified water, wherein the concentration of the sodium hydroxide is 45 g/L, and the cleaning time is 5 minutes; s5, the isopropanol solution comprises isopropanol and a proper amount of purified water, wherein the concentration of the isopropanol is 6 g/L, and the cleaning time is 25 minutes; s7, sodium silicate solution comprises sodium silicate and a proper amount of purified water, wherein the concentration of the sodium silicate is 4 g/L, and the cleaning time is 30 minutes; s9, hydrofluoric acid solution comprises hydrofluoric acid and a proper amount of purified water, wherein the concentration of sodium silicate is 57 g/L, and the cleaning time is 1 minute; and S11, the hydrochloric acid solution comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 82 g/L, the cleaning time is 5 minutes, and compared with the prior art, the cleaning efficiency is higher, and the yield is ensured.
Example IV
The invention provides a high-efficiency cleaning method for a large-size monocrystalline silicon wafer, which comprises the following steps:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
In the embodiment, the flushing pressure in S1 is 0.05-0.1Mpa, and the temperature of purified water is 26 ℃; the sodium hydroxide solution in S3 comprises sodium hydroxide and a proper amount of purified water, wherein the concentration of the sodium hydroxide is 47 g/L, and the cleaning time is 3 minutes; s5, the isopropanol solution comprises isopropanol and a proper amount of purified water, wherein the concentration of the isopropanol is 5 g/L, and the cleaning time is 28 minutes; s7, sodium silicate solution comprises sodium silicate and a proper amount of purified water, wherein the concentration of the sodium silicate is 3 g/L, and the cleaning time is 30 minutes; s9, hydrofluoric acid solution comprises hydrofluoric acid and a proper amount of purified water, wherein the concentration of sodium silicate is 57 g/L, and the cleaning time is 1 minute; and S11, the hydrochloric acid solution comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 89 g/L, the cleaning time is 5 minutes, and compared with the prior art, the cleaning efficiency is higher, and the yield is ensured.
Example five
The invention provides a high-efficiency cleaning method for a large-size monocrystalline silicon wafer, which comprises the following steps:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
In the embodiment, the flushing pressure in S1 is 0.05-0.1Mpa, and the temperature of purified water is 18-28 ℃; the sodium hydroxide solution in S3 comprises sodium hydroxide and a proper amount of purified water, wherein the concentration of the sodium hydroxide is 42 g/L, and the cleaning time is 3 minutes; s5, the isopropanol solution comprises isopropanol and a proper amount of purified water, wherein the concentration of the isopropanol is 5 g/L, and the cleaning time is 28 minutes; s7, sodium silicate solution comprises sodium silicate and a proper amount of purified water, wherein the concentration of the sodium silicate is 3 g/L, and the cleaning time is 28 minutes; s9, hydrofluoric acid solution comprises hydrofluoric acid and a proper amount of purified water, wherein the concentration of sodium silicate is 54 g/L, and the cleaning time is 2 minutes; and S11, the hydrochloric acid solution comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 86 g/L, the cleaning time is 4 minutes, and compared with the prior art, the cleaning efficiency is higher, and the yield is ensured.
Example six
The invention provides a high-efficiency cleaning method for a large-size monocrystalline silicon wafer, which comprises the following steps:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
In the embodiment, the flushing pressure in S1 is 0.05-0.1Mpa, and the temperature of purified water is 19 ℃; the sodium hydroxide solution in S3 comprises sodium hydroxide and a proper amount of purified water, wherein the concentration of the sodium hydroxide is 45 g/L, and the cleaning time is 3 minutes; s5, the isopropanol solution comprises isopropanol and a proper amount of purified water, wherein the concentration of the isopropanol is 5 g/L, and the cleaning time is 28 minutes; s7, sodium silicate solution comprises sodium silicate and a proper amount of purified water, wherein the concentration of the sodium silicate is 3 g/L, and the cleaning time is 30 minutes; s9, hydrofluoric acid solution comprises hydrofluoric acid and a proper amount of purified water, wherein the concentration of sodium silicate is 54 g/L, and the cleaning time is 3 minutes; and S11, the hydrochloric acid solution comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 88 g/L, the cleaning time is 4 minutes, and compared with the prior art, the cleaning efficiency is higher, and the yield is ensured.
Working principle, pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece; ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing; cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece; primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece; cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured; and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece; cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured; and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece; cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece; fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece; washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece; fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (7)
1. The high-efficiency cleaning method for the large-size monocrystalline silicon wafer is characterized by comprising the following steps of:
s1: pretreatment cleaning: washing the surface of the monocrystalline silicon piece by purified water, and washing away metal particles, silicon powder dust and organic impurities of the monocrystalline silicon piece;
s2: ultrasonic rinsing: putting the monocrystalline silicon piece into a water tank for ultrasonic rinsing;
s3: cleaning with sodium hydroxide solution: putting the monocrystalline silicon piece into a sodium hydroxide solution tank, and cleaning a damaged layer on the surface of the monocrystalline silicon piece;
s4: primary flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s5: cleaning by isopropanol solution: the monocrystalline silicon piece is put into an isopropanol solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s6: and (3) flushing for the second time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s7: cleaning a sodium silicate solution: the monocrystalline silicon piece is put into a sodium silicate solution tank, so that the surface of the monocrystalline silicon piece is convenient to be textured;
s8: and (3) flushing for the third time: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s9: cleaning with hydrofluoric acid solution: putting the monocrystalline silicon piece into a hydrofluoric acid solution tank to remove sodium silicate solution on the surface of the monocrystalline silicon piece;
s10: fourth flushing: using purified water to remove solution residues on the surface of the monocrystalline silicon piece;
s11: washing with hydrochloric acid solution: putting the monocrystalline silicon piece into a hydrochloric acid solution tank to remove metal ions on the surface of the monocrystalline silicon piece;
s12: fifth flushing: and (3) cleaning solution residues on the surface of the monocrystalline silicon piece by using purified water.
2. The method for efficiently cleaning a large-size monocrystalline silicon piece according to claim 1, characterized by: the flushing pressure in the S1 is 0.05-0.1Mpa, and the temperature of purified water is 18-28 ℃.
3. The method for efficiently cleaning a large-size monocrystalline silicon piece according to claim 1, characterized by: the sodium hydroxide solution in the step S3 comprises sodium hydroxide and a proper amount of purified water, wherein the concentration of the sodium hydroxide is 42-47 g/L, and the cleaning time is 3-5 minutes.
4. The method for efficiently cleaning a large-size monocrystalline silicon piece according to claim 1, characterized by: the isopropanol solution in the step S5 comprises isopropanol and a proper amount of purified water, wherein the concentration of the isopropanol is 4-6 g/L, and the cleaning time is 25-35 minutes.
5. The method for efficiently cleaning a large-size monocrystalline silicon piece according to claim 1, characterized by: the sodium silicate solution in the step S7 comprises sodium silicate and a proper amount of purified water, wherein the concentration of the sodium silicate is 2-4 g/L, and the cleaning time is 25-35 minutes.
6. The method for efficiently cleaning a large-size monocrystalline silicon piece according to claim 1, characterized by: the hydrofluoric acid solution in the step S9 comprises hydrofluoric acid and a proper amount of purified water, the concentration of sodium silicate is 52-59 g/L, and the cleaning time is 1-2 minutes.
7. The method for efficiently cleaning a large-size monocrystalline silicon piece according to claim 1, characterized by: the hydrochloric acid solution in the step S11 comprises hydrochloric acid and a proper amount of purified water, the concentration of sodium silicate is 82-89 g/L, and the cleaning time is 3-5 minutes.
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