CN116133503A - Pressure sensor of surrounding grid field effect transistor and preparation method thereof - Google Patents
Pressure sensor of surrounding grid field effect transistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 90
- 239000010703 silicon Substances 0.000 claims abstract description 90
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- 230000005669 field effect Effects 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
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- 238000009792 diffusion process Methods 0.000 claims description 82
- 239000010408 film Substances 0.000 claims description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
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- 229910052751 metal Inorganic materials 0.000 claims description 8
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 3
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- 238000005224 laser annealing Methods 0.000 claims description 3
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- 239000002689 soil Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
The utility model discloses a pressure sensor of a fence field effect transistor and a preparation method thereof. According to the utility model, the field effect transistor prepared from the silicon film is used for pressure sensing, when pressure is applied to the silicon film on the back, the film deforms, the mobility of carriers in a channel is changed, and the drain current and the starting voltage are also changed, so that a curve of electrical characteristics and pressure is obtained, and the sensing of a pressure value is realized. The pressure sensor manufactured by the silicon substrate material has high integrated density, high speed and simple process, and accords with moore's law.
Description
Technical Field
The utility model belongs to the technical field of sensors, and particularly relates to a pressure sensor of a surrounding grid field effect transistor and a preparation method thereof.
Background
With the development of microelectronics, microsensors have also evolved rapidly. Among them, the silicon pressure microsensor is widely used in various fields of medical treatment, industrial process monitoring, biology, aviation, etc. Among the numerous silicon pressure microsensors, the capacitive pressure microsensors have attracted much attention in recent years because of their advantages of higher sensitivity, stability, shorter warm-up time, and less susceptibility to damage during packaging. However, in the fabrication of the capacitive pressure microsensor, the signal processing circuit thereof is very complex and it is difficult to measure a minute capacitance change. The silicon capacitive pressure microsensor integrated with the signal conversion device, namely the field effect transistor pressure microsensor well overcomes the defect that the capacitance of the capacitive pressure microsensor is difficult to measure, and the fence field effect transistor has the advantages of simple process, high yield, compatibility with integrated circuit processes and the like.
The types of capacitive pressure microsensors in the prior art are resistive strain gages and MEMS pressure sensors.
For example, the utility model with the authority bulletin number of CN202066629U discloses a strain beam type soil pressure sensor, which comprises a hollow shell and a cover plate for closing the shell, wherein an elastic beam and a force transmission shaft are arranged in the inner cavity of the shell, a circle of steps extending upwards are arranged at the bottom of the shell, and the elastic beam is erected on the steps; the upper surface and the lower surface of the elastic beam are respectively provided with a resistance strain gauge with the same resistance value and a wiring board matched with the resistance strain gauge, the resistance strain gauges are connected through wires to form a Wheatstone bridge, the Wheatstone bridge is connected with the strain gauge through a connecting wire, and a through hole allowing the connecting wire to pass through is formed in the shell; a force transmission shaft is arranged between the elastic beam and the cover plate, one end of the force transmission shaft is in contact with the cover plate, and the other end of the force transmission shaft is in contact with the elastic beam.
The utility model application with publication number of CN1432801A discloses a MEMS piezoresistive pressure sensor chip and a preparation method thereof. The MEMS piezoresistive pressure sensor chip is a cup-shaped structure, and comprises a square pressure sensing film and four piezoresistors formed by surrounding supporting parts in the maximum strain area of the pressure sensing film, wherein the piezoresistors are manufactured by adopting an ion implantation process, a circle of n+ isolation areas are added around the piezoresistors, and an alignment mark capable of monitoring the thickness of the pressure sensing film is manufactured at the edge of the pressure sensing film.
However, the size of the resistive strain gauge and the MEMS pressure sensor is large, which is disadvantageous for improving the system integration.
The MOS field effect transistor (metal-oxide-semiconductor type field effect transistor) pressure microsensor has the following advantages: the size is small; carrying out single-sided processing on the wafer; is compatible with integrated circuit processes; the sensor and the signal processing circuit are integrated on the same silicon chip, and the change of pressure is measured by utilizing the change of drain current and starting voltage through a simple voltage-current conversion principle; low power consumption and low cost. The field effect tube pressure microsensor can be widely applied to the fields of medical instruments, pressure switches, regulators, industrial control and the like.
Disclosure of Invention
Aiming at the defects of the existing pressure sensing device, the utility model provides a pressure sensing device based on a fence field effect transistor and a manufacturing method thereof, wherein the fence field effect transistor is used as a pressure sensor, and the pressure value is sensed by changing the voltage-current change property caused by pressure, so that the pressure sensing device is a feasible scheme for breaking through the performance bottleneck and the integration bottleneck of the traditional resistance strain gauge and MEMS pressure sensor. Under the pressure state, the silicon layer on the back of the silicon wafer receives tensile stress, which causes the mobility of carriers to change, thereby causing the pressure sensing and the quantitative calibration of the pressure value to be realized through the change of the size of source leakage current.
The pressure sensor of the surrounding gate field effect transistor comprises a silicon substrate, wherein a layer of silicon film with a p-type doping type is epitaxially grown on the surface of the silicon substrate, two heavily doped regions are formed on the silicon film through n-type doping, one heavily doped region is used as a source diffusion region, the other heavily doped region is used as a drain diffusion region, the source diffusion region and the drain diffusion region are respectively in ohmic contact, and an electrode lead is led out to be used as a source electrode and a drain electrode;
an oxide layer is arranged on the surface of the silicon substrate between the source diffusion region and the drain diffusion region, and a contact electrode is prepared on the oxide layer and used as a grid electrode;
and grooves which are exposed out of the silicon film and serve as contact points for applying external pressure are etched on the back surface of the silicon substrate.
Preferably, the thickness of the silicon film is 270-500 nm; the thickness of the n-type doped source diffusion region and the drain diffusion region is 10-50 nm.
Preferably, the n-type doping of the source and drain diffusion regions has a doping concentration of 10 17 From 10 to 10 per cubic centimeter 20 Per cubic centimeter.
Preferably, the thickness of the oxide layer is 10-100 nm.
Preferably, the electrode lead materials of the source electrode and the drain electrode are aluminum, nickel or copper; the contact electrode material of the grid electrode is at least one of nickel, tungsten and copper.
Preferably, the central region of the transistor is the source, the gate surrounds the source, the drain surrounds the gate, and the recess corresponding region is on the back of the silicon substrate under the gate and the source.
The utility model also provides a preparation method of the pressure sensor of the surrounding grid field effect transistor, which comprises the following steps:
(1) Providing a silicon substrate, and extending a layer of silicon film with a p-type doping type on the surface of the silicon substrate;
(2) Forming two heavily doped regions on the silicon film through n-type doping, wherein one heavily doped region is used as a source diffusion region, the other heavily doped region is used as a drain diffusion region, the source diffusion region and the drain diffusion region are respectively in ohmic contact, and electrode leads are led out to serve as a source electrode and a drain electrode;
(3) Depositing an oxide layer on the surface of the silicon substrate between the source diffusion region and the drain diffusion region, and preparing a contact electrode on the oxide layer as a grid electrode;
(4) And etching a groove exposing the silicon film and serving as a contact point for applying external pressure on the back surface of the silicon substrate.
Preferably, in the preparation method, the thickness of the silicon film is 270-500 nm;
the thickness of the n-type doped source diffusion region and the drain diffusion region is 10-50 nm;
the n-type doping of the source diffusion region and the drain diffusion region has a doping concentration of 10 17 From 10 to 10 per cubic centimeter 20 Every cubic centimeter;
the thickness of the oxide layer is 10-100 nm.
Preferably, in the preparation method, the electrode lead materials of the source electrode and the drain electrode are aluminum, nickel or copper; the contact electrode material of the grid electrode is at least one of nickel, tungsten and copper.
Preferably, in the preparation method, in the step (1), the silicon thin film is prepared by a chemical vapor deposition method;
in the step (2), the n-type doping method is thermal diffusion or ion implantation;
in the step (2), before ohmic contact is made on the source diffusion region and the drain diffusion region, impurity activation annealing is performed, and the annealing method is thermal annealing, microwave annealing or laser annealing;
in the step (2), the metal is deposited by magnetron sputtering deposition or thermal oxidation when ohmic contact is made
In the step (3), the mode of depositing metal in the process of preparing the contact electrode is chemical vapor deposition, thermal evaporation or sputtering;
in the step (4), the method for etching the silicon substrate is plasma etching or solution etching.
The beneficial effects of the utility model are as follows: according to the utility model, the field effect transistor prepared from the silicon film is used for pressure sensing, when pressure is applied to the silicon film on the back, the film deforms, the mobility of carriers in a channel is changed, and the drain current and the starting voltage are also changed, so that a curve of electrical characteristics and pressure is obtained, and the sensing of a pressure value is realized. The pressure sensor manufactured by the silicon substrate material has high integrated density, high speed and simple process, and accords with moore's law.
The sensor of the utility model has the following advantages: 1) The sensitivity is high, and the pressure directly acts on the back silicon film for generating the channel; 2) The device size is small, the CMOS size can be as small as tens of nanometers, and is far smaller than the sizes of the current resistance strain gage and MEMS pressure sensor, thereby being beneficial to improving the system integration level; 3) The integrated circuit is compatible with the integrated circuit manufacturing process, and the sensor can be integrated at the same time of chip manufacturing by adopting the semiconductor process widely used at present. Therefore, the sensor has wide application prospect in a plurality of fields such as motion sensing, medical treatment, mobile electronic products and the like.
Drawings
Fig. 1 is a schematic view of a silicon wafer epitaxial silicon film structure.
Fig. 2 is a schematic diagram of a source-drain diffusion region doped on the surface of a thin film to form an ohmic contact source-drain region.
FIG. 3 is a schematic diagram of a gate region formed by oxide and metal on a surface of a thin film.
Fig. 4 is a top view of a wrap gate field effect transistor device structure.
Fig. 5 is a cross-sectional view of a wrap gate field effect transistor device structure.
Fig. 6 is a schematic diagram of the connection mode of the sensor of the surrounding gate field effect transistor device in operation.
FIG. 7 is a graph of current-voltage curve measurements of a pressure sensor at 10 kN.
In fig. 1 to 3 and fig. 5 to 6, a silicon substrate 10, a silicon thin film 11, a source diffusion region 20, a drain diffusion region 21, a contact electrode 30, an oxide layer 31, and a recess 50; fig. 4 top view of the device: source 40, drain 41, gate 42.
Detailed Description
Example 1
A pressure sensor of a surrounding grid field effect transistor, and fig. 1-3 and 5 are structures in the manufacturing process. As shown in fig. 1, a pressure sensor of a surrounding gate field effect transistor includes a silicon substrate 10, and a silicon film 11 with a p-type doping type is epitaxially grown on the surface of the silicon substrate 10. The thickness of the silicon thin film 11 is 270 to 500nm. As shown in fig. 2, two heavily doped regions are formed on the silicon film 11 by n-type doping, one of the heavily doped regions being a source diffusion region 20 and the other heavily doped region being a drain diffusion region 21. The thickness of the n-doped source diffusion region 20 and drain diffusion region 21 is 10 to 50nm. The n-type doping of the source diffusion region and the drain diffusion region has a doping concentration of 10 17 From 10 to 10 per cubic centimeter 20 Per cubic centimeter. The source diffusion region 20 and the drain diffusion region 21 are respectively made EuropeThe electrode leads are contacted and led out as source and drain electrodes. The electrode lead material of the source and drain electrodes may use aluminum, nickel or copper.
As shown in fig. 3, an oxide layer 31 is provided on the surface of the silicon substrate between the source diffusion region 20 and the drain diffusion region 21, and the thickness of the oxide layer 31 is 10 to 100nm. A contact electrode 30 is prepared on the oxide layer 31 as a gate electrode. The contact electrode material of the grid electrode is at least one of nickel, tungsten and copper.
Fig. 4 is a top view of a structure of a surrounding gate field effect transistor, in which a source 40 is located in the center, a drain 41 is located in the outer periphery, and a gate 42 is located between the source 40 and the drain 41.
As shown in fig. 5, the back surface of the silicon substrate 10 is etched with a groove 50 exposing the silicon thin film 11 as a contact point for applying external pressure. The recess 50 is flared from top to bottom.
The central area of the transistor is the source electrode, the grid electrode surrounds the source electrode, the drain electrode surrounds the grid electrode, and the groove corresponding area is arranged on the back surface of the silicon substrate below the grid electrode.
The preparation method of the pressure sensor of the surrounding grid field effect transistor comprises the following steps:
(1) Providing a silicon substrate, and epitaxial a layer of silicon film with a doping type of p-type on the surface of the silicon substrate, wherein the thickness of the silicon film is 270-500 nm. The silicon thin film is prepared by a chemical vapor deposition method.
(2) Two heavily doped regions are formed on the silicon film through n-type doping, wherein one heavily doped region is used as a source diffusion region, and the other heavily doped region is used as a drain diffusion region. The method of n-type doping is thermal diffusion or ion implantation. The thickness of the n-type doped source diffusion region and the drain diffusion region is 10-50 nm. The n-type doping of the source diffusion region and the drain diffusion region has a doping concentration of 10 17 From 10 to 10 per cubic centimeter 20 Per cubic centimeter. The source diffusion region and the drain diffusion region are respectively in ohmic contact and electrode leads are led out to serve as a source electrode and a drain electrode. The electrode lead materials of the source electrode and the drain electrode are aluminum, nickel or copper. The source diffusion region and the drain diffusion region are subjected to impurity activation annealing before ohmic contact, and the annealing method is thermal annealing, microwave annealing or laser annealing. The metal is deposited by magnetic method when ohmic contact is madeControlled sputter deposition or thermal oxidation
(3) And depositing an oxide layer on the surface of the silicon substrate between the source diffusion region and the drain diffusion region, wherein the thickness of the oxide layer is 10-100 nm, and preparing a contact electrode on the oxide layer as a grid electrode. The contact electrode material of the grid electrode is at least one of nickel, tungsten and copper. The manner of depositing the metal when preparing the contact electrode is chemical vapor deposition, thermal evaporation or sputtering.
(4) And etching a groove exposing the silicon film and serving as a contact point for applying external pressure on the back surface of the silicon substrate. The method for etching the silicon substrate is plasma etching or solution etching.
When the pressure sensor of the surrounding gate field effect transistor is used, the pressure is applied to the silicon film 11 etched on the back (through the groove 50), so that the surface of the silicon film 11 can be deformed by tensile stress. Specifically, as shown in fig. 6, when the pressure sensor device is operated, the drain electrode is grounded to a negative voltage, and the source electrode led out from the source diffusion region 20 is grounded, and the strain of the silicon substrate 10 is calculated by measuring the change in threshold voltage of the contact electrode 30 serving as the gate electrode, thereby calculating the pressure value.
As shown in fig. 6, the silicon is strained under pressure, so that the silicon thin film 11 is tensile strained, the mobility of carriers in the silicon is changed, and the larger the tensile strain is, the more obvious the mobility change is, so that the source-drain (source and drain) intermediate channel current is changed. Therefore, the change of the channel current between the source and the drain can be accurately perceived by measuring the change of the field effect transistor current under the pressure state, so that the high-precision sensing of the pressure value is realized.
Example 2
The preparation method of the pressure sensor of the surrounding grid field effect transistor comprises the following steps:
(1) Providing a silicon substrate, and epitaxial a layer of silicon film with a doping type of p-type on the surface of the silicon substrate, wherein the thickness of the silicon film is 270, 350 or 500 nanometers respectively. The silicon thin film is prepared by a chemical vapor deposition method.
(2) Forming two heavily doped regions on the silicon film through n-type doping, wherein one heavily doped region is used as a source diffusion region, and the other heavily doped region is used as a drain regionAnd a diffusion region. The method of n-type doping is thermal diffusion or ion implantation. The thickness of the n-doped source and drain diffusion regions is 50nm. The n-type doping of the source diffusion region and the drain diffusion region has a doping concentration of 10 20 Per cubic centimeter. The source diffusion region and the drain diffusion region are respectively deposited with nickel electrode leads.
(3) And depositing an oxide layer on the surface of the silicon substrate between the source diffusion region and the drain diffusion region, wherein the thickness of the oxide layer is 100nm, and preparing a contact electrode on the oxide layer as a grid electrode. The contact electrode material of the grid electrode is tungsten. The manner in which the metal is deposited in the preparation of the contact electrode is sputtering.
(4) And etching a groove exposing the silicon film and serving as a contact point for applying external pressure on the back surface of the silicon substrate. The method for etching the silicon substrate is solution etching.
Detection example 1
The pressure sensor prepared in example 2 was used to test, the drain electrode was grounded to a negative voltage, the source electrode drawn out of the source diffusion region 20 was grounded, and the current-voltage curve of the pressure sensor was then tested by applying pressure to the recess 50. Fig. 7 is a graph of current versus voltage at 10kN for a pressure sensor with a silicon epitaxial layer thickness of 500nm to 270 nm, confirming that the sensor is capable of performing a pressure sensing function well.
Claims (10)
1. The pressure sensor of the surrounding gate field effect transistor is characterized by comprising a silicon substrate, wherein a layer of silicon film with a p-type doping type is epitaxially grown on the surface of the silicon substrate, two heavily doped regions are formed on the silicon film through n-type doping, one heavily doped region is used as a source diffusion region, the other heavily doped region is used as a drain diffusion region, and the source diffusion region and the drain diffusion region are respectively in ohmic contact and lead out electrode leads to be used as a source electrode and a drain electrode;
an oxide layer is arranged on the surface of the silicon substrate between the source diffusion region and the drain diffusion region, and a contact electrode is prepared on the oxide layer and used as a grid electrode;
and grooves which are exposed out of the silicon film and serve as contact points for applying external pressure are etched on the back surface of the silicon substrate.
2. The pressure sensor of the wrap gate field effect transistor of claim 1, wherein the thickness of the silicon thin film is 270-500 nm; the thickness of the n-type doped source diffusion region and the drain diffusion region is 10-50 nm.
3. The pressure sensor of claim 1, wherein the n-type doping of the source and drain diffusion regions has a doping concentration of 10 17 From 10 to 10 per cubic centimeter 20 Per cubic centimeter.
4. The pressure sensor of a wrap gate field effect transistor of claim 1, wherein the oxide layer has a thickness of 10 to 100nm.
5. The pressure sensor of the wrap gate field effect transistor of claim 1, wherein the electrode lead material of the source and drain electrodes is aluminum, nickel or copper; the contact electrode material of the grid electrode is at least one of nickel, tungsten and copper.
6. The pressure sensor of the surrounding gate field effect transistor of claim 1, wherein the source is in the middle of the surface of the transistor, the drain is on the outer ring, the gate is on the circle between the source and the drain, and the groove corresponds to the positions of the gate and the source.
7. A method of manufacturing a pressure sensor for a wrap gate field effect transistor, comprising the steps of:
(1) Providing a silicon substrate, and extending a layer of silicon film with a p-type doping type on the surface of the silicon substrate;
(2) Forming two heavily doped regions on the silicon film through n-type doping, wherein one heavily doped region is used as a source diffusion region, the other heavily doped region is used as a drain diffusion region, the source diffusion region and the drain diffusion region are respectively in ohmic contact, and electrode leads are led out to serve as a source electrode and a drain electrode;
(3) Depositing an oxide layer on the surface of the silicon substrate between the source diffusion region and the drain diffusion region, and preparing a contact electrode on the oxide layer as a grid electrode;
(4) And etching a groove exposing the silicon film and serving as a contact point for applying external pressure on the back surface of the silicon substrate.
8. The method according to claim 7, wherein the thickness of the silicon thin film is 270 to 500nm;
the thickness of the n-type doped source diffusion region and the drain diffusion region is 10-50 nm;
the n-type doping of the source diffusion region and the drain diffusion region has a doping concentration of 10 17 From 10 to 10 per cubic centimeter 20 Every cubic centimeter;
the thickness of the oxide layer is 10-100 nm.
9. The method of claim 7, wherein the electrode lead material of the source and drain electrodes is aluminum, nickel or copper; the contact electrode material of the grid electrode is at least one of nickel, tungsten and copper.
10. The method according to claim 7, wherein in the step (1), the silicon thin film is prepared by a chemical vapor deposition method;
in the step (2), the n-type doping method is thermal diffusion or ion implantation;
in the step (2), before ohmic contact is made on the source diffusion region and the drain diffusion region, impurity activation annealing is performed, and the annealing method is thermal annealing, microwave annealing or laser annealing;
in the step (2), the metal is deposited by magnetron sputtering deposition or thermal oxidation when ohmic contact is made
In the step (3), the mode of depositing metal in the process of preparing the contact electrode is chemical vapor deposition, thermal evaporation or sputtering;
in the step (4), the method for etching the silicon substrate is plasma etching or solution etching.
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