CN116133471A - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
- Publication number
- CN116133471A CN116133471A CN202211736587.3A CN202211736587A CN116133471A CN 116133471 A CN116133471 A CN 116133471A CN 202211736587 A CN202211736587 A CN 202211736587A CN 116133471 A CN116133471 A CN 116133471A
- Authority
- CN
- China
- Prior art keywords
- layer
- area
- substrate
- region
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 262
- 239000010408 film Substances 0.000 claims abstract description 229
- 239000010409 thin film Substances 0.000 claims abstract description 55
- 230000005540 biological transmission Effects 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims description 558
- 239000000463 material Substances 0.000 claims description 81
- 238000002834 transmittance Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 54
- 230000005496 eutectics Effects 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000012044 organic layer Substances 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 description 25
- 238000010586 diagram Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000005530 etching Methods 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a display panel, a preparation method thereof and a display device, wherein the display panel comprises a light transmission area, a pixel area and a wiring area, the pixel area is positioned at one side of the light transmission area along a first direction, and the wiring area is positioned at one side of the light transmission area along a second direction; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction; a substrate base; a driving circuit layer positioned on one side of the substrate base plate; the driving circuit layer comprises a thin film transistor, and the thin film transistor is positioned in the pixel area; the first film layer is at least partially positioned on one side of the driving circuit layer, which is away from the substrate base plate; the first film layer comprises a first opening positioned in the light transmission area, a first part positioned in the pixel area and a second part positioned in the wiring area; the thickness of the first part is H1 along the direction perpendicular to the plane of the substrate base plate; the height difference between the surface of the first part on the side away from the substrate and the surface of the second part on the side away from the substrate is delta H; wherein, the ratio of the I delta H I to the H1 is less than or equal to 5 percent.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel, a preparation method thereof and a display device.
Background
With the development of display technology, the requirements on devices with display functions are increasing, and in particular, display panels with high resolution, low power consumption and high brightness are becoming the main stream products of current display devices.
The display panel using the micro light emitting device as the display light emitting device generally includes a driving circuit, and the micro light emitting device needs to be transferred by a mass transfer manner and electrically connected with a driving bond. However, the flatness of the existing display panel is poor, and the bonding effect of the micro light emitting element is poor in the mass transfer process of the micro light emitting element.
Disclosure of Invention
The invention provides a display panel, a preparation method of the display panel and a display device, which are used for improving the flatness of the display panel and ensuring the smooth proceeding of the subsequent manufacturing process of the display panel.
According to an aspect of the present invention, there is provided a display panel including:
the pixel area is positioned at one side of the light transmission area along a first direction, the wiring area is positioned at one side of the light transmission area along a second direction, and the first direction and the second direction are intersected; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction;
A substrate base;
the driving circuit layer is positioned on one side of the substrate base plate; the driving circuit layer comprises a thin film transistor, and the thin film transistor is positioned in the pixel area;
the first film layer is at least partially positioned on one side of the driving circuit layer, which is away from the substrate base plate; the first film layer comprises a first opening positioned in the light transmission area, a first part positioned in the pixel area and a second part positioned in the wiring area; the thickness of the first part is H1 along the direction vertical to the plane of the substrate base plate; the height difference between the surface of the first part on the side away from the substrate and the surface of the second part on the side away from the substrate is delta H; wherein, the ratio of the I delta H I to the H1 is less than or equal to 5 percent.
According to another aspect of the present invention, there is provided a method of manufacturing a display panel including: the pixel area is positioned at one side of the light transmission area along a first direction, the wiring area is positioned at one side of the light transmission area along a second direction, and the first direction and the second direction are intersected; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction;
The preparation method of the display panel comprises the following steps:
providing a substrate;
forming a driving circuit layer on one side of the substrate base plate; the driving circuit layer comprises a thin film transistor; the thin film transistor is positioned in the pixel area;
forming a first film layer on one side of the driving circuit layer, which is away from the substrate base plate; the first film layer comprises a first opening positioned in the light transmission area, a first part positioned in the pixel area and a second part positioned in the wiring area; the thickness of the first part is H1 along the direction vertical to the plane of the substrate base plate; the height difference between the surface of the first part on the side away from the substrate and the surface of the second part on the side away from the substrate is delta H; wherein |delta H|/H1 is less than or equal to 5 percent.
According to another aspect of the present invention, there is provided a display device including: the display panel.
According to the technical scheme, the pixel area is arranged on one side of the light transmission area along the first direction, and the driving circuit layer comprising the thin film transistor is arranged in the pixel area so as to realize the driving display function; through set up the line district of walking in the light-transmitting zone along one side of second direction to set up the signal and walk the line and realize the signal transmission function in the line district, and set up first rete in one side that drive circuit layer deviates from substrate, set up first rete including being located the first opening of light-transmitting zone, be located the first part of pixel district and be located the second part of walking the line district, under the prerequisite of guaranteeing that light-transmitting zone has good light transmissivity, make the surface height that one side surface that first part deviates from substrate and second part deviate from one side surface of substrate keep unanimous, with guarantee that display panel has comparatively good roughness, be favorable to simplifying the technology process behind the first rete of display panel, for example when display panel includes light-emitting element, the setting of light-emitting element behind the first rete of being convenient for is favorable to improving the connection accuracy of light-emitting element and drive circuit layer corresponding structure.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the cross-section B1-B3 of FIG. 1 according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of another embodiment of the present invention taken along the section B1-B3 in FIG. 1;
FIG. 4 is a schematic cross-sectional view of the cross-section B1-B2 of FIG. 1 according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of the structure of the section B3-B2 in FIG. 1 according to the embodiment of the present invention;
FIG. 6 is a schematic view showing a cross-sectional structure taken along the line B1-B2 in FIG. 1 according to another embodiment of the present invention;
Fig. 7 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of the cross-section B2-B3 of FIG. 7 according to an embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view of the cross-section B1-B4 of FIG. 7 according to an embodiment of the present invention;
fig. 10 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a manufacturing process of a display panel according to an embodiment of the present invention;
FIG. 12 is a flowchart of a method for preparing a first film layer according to an embodiment of the present invention;
FIG. 13 is a schematic structural diagram of a first film layer according to an embodiment of the present invention;
FIG. 14 is a schematic structural diagram of another first film layer according to an embodiment of the present invention;
FIG. 15 is a schematic structural diagram of a preparation process of a first film layer according to an embodiment of the present invention;
FIG. 16 is a flowchart of another method for manufacturing a display panel according to an embodiment of the present invention;
FIG. 17 is a schematic view illustrating a manufacturing process of another display panel according to an embodiment of the present invention;
FIG. 18 is a schematic structural view of a first film layer according to an embodiment of the present invention;
FIG. 19 is a schematic view of a preparation process of a first film layer according to an embodiment of the present invention;
FIG. 20 is a flowchart of a method for manufacturing a display panel according to another embodiment of the present invention;
fig. 21 is a schematic structural view illustrating a manufacturing process of a display panel according to another embodiment of the present invention;
fig. 22 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As described in the background art, when the flatness of the display panel is poor, the subsequent process of the display panel is not facilitated, for example, after the driving circuit of the display panel is formed, if the heights of the upper surfaces of the display panel are inconsistent, the distances between the transfer substrate for transferring the micro light emitting element and each position of the display panel are inconsistent, so that the falling position of the micro light emitting element cannot be accurately controlled, and the micro light emitting element cannot be accurately electrically connected with the driving circuit, thereby affecting the bonding effect of the micro light emitting element.
Based on the technical problems described above, an embodiment of the present invention provides a display panel, including: the pixel area is positioned at one side of the light transmission area along the first direction, and the wiring area is positioned at one side of the light transmission area along the second direction, and the first direction and the second direction are intersected; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction; a substrate base; a driving circuit layer positioned on one side of the substrate base plate; the driving circuit layer comprises a thin film transistor, and the thin film transistor is positioned in the pixel area; the first film layer is at least partially positioned on one side of the driving circuit layer, which is away from the substrate base plate; the first film layer comprises a first opening positioned in the light transmission area, a first part positioned in the pixel area and a second part positioned in the wiring area; the thickness of the first part is H1 along the direction perpendicular to the plane of the substrate base plate; the height difference between the surface of the first part on the side away from the substrate and the surface of the second part on the side away from the substrate is delta H; wherein, the ratio of the I delta H I to the H1 is less than or equal to 5 percent.
By adopting the technical scheme, the pixel area is arranged on one side of the light transmission area along the first direction, and the driving circuit layer comprising the thin film transistor is arranged in the pixel area so as to realize the driving display function; through set up the line district of walking in the light-transmitting zone along one side of second direction to set up the signal and walk the line and realize the signal transmission function in the line district, and set up first rete in one side that drive circuit layer deviates from substrate, set up first rete including being located the first opening of light-transmitting zone, be located the first part of pixel district and be located the second part of walking the line district, under the prerequisite of guaranteeing that light-transmitting zone has good light transmissivity, make the surface height that one side surface that first part deviates from substrate and second part deviate from one side surface of substrate keep unanimous, with guarantee that display panel has comparatively good roughness, be favorable to simplifying the technology process behind the first rete of display panel, for example when display panel includes light-emitting element, the setting of light-emitting element behind the first rete of being convenient for is favorable to improving the connection accuracy of light-emitting element and drive circuit layer corresponding structure.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram of a cross section taken along a line B1-B3 in fig. 1 according to an embodiment of the present invention, and referring to fig. 1 and fig. 2 in combination, the display panel includes: the pixel area A2 is positioned at one side of the light transmission area A1 along the first direction S1, the wiring area A3 is positioned at one side of the light transmission area A1 along the second direction S2, and the first direction S1 and the second direction S2 are intersected; the width of the pixel area A2 in the first direction S1 is different from the width of the wiring area A3 in the second direction S2; a substrate base 10; a driving circuit layer 20 located on one side of the substrate base 10; the driving circuit layer 20 includes a thin film transistor T located in the pixel area A2; a first film layer 30 at least partially located on a side of the driving circuit layer 20 facing away from the substrate 10; the first film layer 30 includes a first opening 30a located in the light-transmitting area A1, a first portion 31 located in the pixel area A2, and a second portion 32 located in the routing area A3; the thickness of the first portion 31 is H1 in a direction perpendicular to the plane in which the substrate 10 is located; the difference in height between the surface of the first portion 31 on the side facing away from the substrate base plate 10 and the surface of the second portion 32 on the side facing away from the substrate base plate 10 is Δh; wherein, the ratio of the I delta H I to the H1 is less than or equal to 5 percent.
It can be understood that the driving circuit layer 20 may include a thin film transistor T disposed at the pixel region A2 on one side of the substrate base 10 so that the thin film transistor T performs a driving display function; the driving circuit layer 20 may further include a signal trace 51 disposed in the trace area A3 for transmitting an electrical signal; the transparent area A1 has a large light transmittance, so that a photosensitive element can be disposed at the position, or the display panel can realize transparent display, and the transparent area A1 can be rectangular as shown in fig. 1, or can be circular, elliptical or other regular or irregular shapes.
Taking the shape of the light-transmitting area A1 as a rectangle as an example, at this time, the first direction S1 and the second direction S2 may be perpendicular to each other, at this time, the pixel area A2 may be disposed on one side of the light-transmitting area A1 along the first direction S1, and one side of the light-transmitting area A3 of the wiring area A1 along the second direction S2, that is, the pixel area A2 and the wiring area A3 are respectively located on two adjacent sides of the light-transmitting area A1, so that the signal wiring disposed in the wiring area A3 may transmit a corresponding signal from the other side of the light-transmitting area A1 opposite to the pixel area A2 to the display area A2, so that the thin film transistor T of the driving circuit layer of the pixel area A2 may perform display driving. In a possible embodiment, the regions arranged along the first direction S1 and located at two opposite sides of the light-transmitting region A1 may be different pixel regions A2, so that display driving can be implemented at two opposite sides of the light-transmitting region A1; the regions arranged along the second direction S2 and located at two opposite sides of the light-transmitting region A1 may be different routing regions A3, so that devices such as thin film transistors of the pixel regions A2 located at two opposite sides of the light-transmitting region A1 may be electrically connected through signal routing lines set in the two routing regions A3, so as to realize signal transmission.
It will be appreciated that the driving circuit layer 20 includes, but is not limited to, a thin film transistor T and a signal trace 51, and in alternative embodiments, the driving circuit layer may also include a capacitor or other structure, which is not specifically limited in this embodiment of the present invention.
With continued reference to fig. 1 and 2, a first film layer 30 is further disposed on a side of the driving circuit layer 20 facing away from the substrate 10, and the first film layer 30 may include an organic film layer and/or an inorganic film layer; when the first film layer 30 includes an organic film layer, the first film layer 30 may include photoresist or the like, and the first film layer 30 may be prepared by a process such as coating or printing; when the first film layer 30 includes an inorganic film layer, the first film layer 30 may include silicon oxide and/or silicon nitride, etc., and the first film layer 30 may be prepared by a deposition process, etc.
The first film layer 30 has a first opening 30a in the light-transmitting area A1, so that light can pass through the first opening 30a, and the light-transmitting area A1 is ensured to have higher light transmittance. The first film layer 30 further includes a first portion 31 located in the pixel area A2 and a second portion 32 located in the routing area A3, where a difference in height between a surface of the first portion 31 on a side facing away from the substrate 10 and a surface of the second portion 32 on a side facing away from the substrate 10 is Δh, that is, if a plane on which the substrate 10 is located is taken as a reference plane, a difference in height between a surface of the first portion 31 on a side facing away from the substrate and a surface of the second portion 32 on a side facing away from the substrate is Δh, where the difference in height Δh satisfies |Δh|/h1 be less than or equal to 5%, that is, a difference in height Δh between a surface of the first portion 31 on a side facing away from the substrate 10 and a surface of the second portion 32 on a side facing away from the substrate is not more than 5% of a thickness of the first portion 31, the surface heights of the first portion 31 facing away from the side surface of the substrate and the second portion 32 facing away from the side surface of the substrate are kept substantially the same, so that the first film layer 30 located in the pixel area A2 and the routing area A3 has good flatness, which is beneficial to simplifying other process steps of the display panel after the first film layer 30, for example, when the bonding process of the light emitting element is performed after the first film layer 30, the light emitting element can be prepared based on the first film layer 30 with good flatness, and devices such as a thin film transistor of the light emitting element and a driving circuit layer can be accurately connected, so that the bonding effect of the light emitting element is improved.
Wherein, when the height difference Δh between the surface of the first portion 31 facing away from the substrate 10 and the surface of the second portion 32 facing away from the substrate 10 satisfies |Δh|/h1+.ltoreq.5%, the thickness of the first portion 31 in the direction perpendicular to the plane of the substrate 10 may be the same as or different from the thickness of the second portion 32 in the direction perpendicular to the plane of the substrate 10, which is not particularly limited in the embodiment of the present invention.
In an exemplary embodiment, since the width of the pixel area A2 in the first direction S1 is different from the width of the trace area A3 in the second direction S2, and the pixel area A2 and the trace area A3 are respectively located at different sides of the light-transmitting area A1, the light-transmitting area A1 is generally provided with the light-transmitting hole 20a, so that when the first film layer 30 is formed, the flow condition of the material of the first film layer at the pixel area A2 to the light-transmitting hole 20a of the light-transmitting area A1 and the flow condition of the material of the first film layer at the trace area A3 to the light-transmitting hole 20a of the light-transmitting area A1 are different, there may be a larger difference in height between the side surface of the material layer of the first film layer 30 located at the pixel area A2 facing away from the substrate and the side surface of the material layer 30 located at the trace area A3, at this time, the portions of the first film layer 30 located at the pixel area A2 and/or the trace area A3 may be removed by photolithography or the like, so that the side surface of the first film layer 31 facing away from the substrate surface 32 is kept substantially uniform.
According to the embodiment of the invention, the pixel area is arranged on one side of the light transmission area along the first direction, and the driving circuit layer comprising the thin film transistor is arranged in the pixel area so as to realize the driving display function; through set up the line district of walking in the light-transmitting zone along one side of second direction to set up the signal and walk the line and realize the signal transmission function in the line district, and set up first rete in one side that drive circuit layer deviates from substrate, set up first rete including being located the first opening of light-transmitting zone, be located the first part of pixel district and be located the second part of walking the line district, under the prerequisite of guaranteeing that light-transmitting zone has good light transmissivity, make the surface height that one side surface that first part deviates from substrate and second part deviate from one side surface of substrate keep unanimous, with guarantee that display panel has comparatively good roughness, be favorable to simplifying the technology process behind the first rete of display panel, for example when display panel includes light-emitting element, the setting of light-emitting element behind the first rete of being convenient for is favorable to improving the connection accuracy of light-emitting element and drive circuit layer corresponding structure.
Optionally, fig. 3 is a schematic cross-sectional structure along a section B1-B3 in fig. 1 according to another embodiment of the present invention, and referring to fig. 1 and 3, the display panel further includes a black pixel defining layer 40, which is located between the first film layer 30 and the driving circuit layer 20; the black pixel defining layer 40 includes a second opening 40a located in the light transmitting area A1, a third portion 41 located in the pixel area A2, and a fourth portion 42 located in the routing area A3; the first portion 31 overlaps the third portion 41, the second portion 32 overlaps the fourth portion 42, and the first opening 30a overlaps the second opening 40a in a direction perpendicular to the plane of the substrate base plate 10.
Wherein the black pixel defining layer may comprise a photoresist material doped with a black dye such that the black pixel defining layer has the functions of light blocking and light absorbing.
Specifically, by disposing the black pixel defining layer 40 between the driving circuit layer 20 and the first film layer 30, the third portion 41 of the black pixel defining layer 40 can cover at least part of the structures such as the thin film transistor in the driving circuit layer 20 and the fourth portion 42 can cover at least part of the structures such as the signal trace 51 of the trace setting layer 50 in the direction perpendicular to the plane of the substrate, so that the film layer where the external light reaches the structures such as the thin film transistor T in the driving circuit layer 20 and the film layer where the structures such as the signal trace 51 of the trace setting layer 50 are located can be reduced, and the occurrence of the situation that the display contrast of the display panel is affected due to the reflection of the external light by the thin film transistor T and the signal trace 51 is prevented. In this way, by providing the black pixel defining layer 40, unnecessary reflection can be reduced, so that display contrast can be improved when the display panel performs display, so that the display panel has a better display effect. In addition, the black pixel defining layer 40 is disposed between the first film layer 30 and the driving circuit layer 20, and the black pixel defining layer 40 can be protected by the first film layer 30 to prevent the black pixel defining layer 40 from being damaged or eroded by subsequent processes or external impact, so that the black pixel defining layer 40 can maintain good light blocking and light absorbing effects.
Optionally, fig. 4 is a schematic cross-sectional structure along a section B1-B2 in fig. 1 according to an embodiment of the present invention, and as shown in fig. 4, the driving circuit layer 20 further includes a light hole 20a located in the light-transmitting area A1; the third portion 41 comprises a first sub-portion 411 and a second sub-portion 412 connected; the second sub-portion 412 is located between the first sub-portion 411 and the light hole 20a; at least a portion of the distance between the second sub-portion 412 and the substrate 10 is smaller than the distance between the first sub-portion 411 and the substrate 10.
The light holes 20a are disposed on the driving circuit layer 20 in the light-transmitting area A1, that is, at least a portion of the film layer of the driving circuit layer 20 in the light-transmitting area A1 is removed to form the light holes 20a, so that the light-transmitting area A1 has higher light transmittance. It can be understood that the removal of at least a part of the film layer of the driving circuit layer 20 located in the light-transmitting area A1 is to remove a part of or all of the film layer of the driving circuit layer 20 located in the light-transmitting area A1; when a part of the film layer of the driving circuit layer 20 located in the light transmission region A1 is removed, the film layer having lower light transmittance may be removed while the film layer having higher light transmittance is maintained; when all the film layers in the light-transmitting area A1 are removed, the light-transmitting holes 20a in the light-transmitting area A1 may penetrate all the film layers of the driving circuit layer 20.
Specifically, since the light-transmitting hole 20a is formed in the light-transmitting area A1, light can enter from the light-transmitting hole 20a, and the light propagates in multiple directions, so that the light can easily reach the driving circuit layer 20 of the pixel area A2 through the side wall of the light-transmitting hole 20a, and the light is reflected by the structures such as the thin film transistor in the driving circuit layer 20 of the pixel area A2, thereby affecting the display effect of the display panel. By dividing the third portion 41 of the black pixel defining layer 40 into the first sub-portion 411 and the second sub-portion 412, the distance between at least part of the second sub-portion 412 and the substrate 10 is smaller than the distance between the first sub-portion 411 and the substrate 10, at this time, the first sub-portion 411 may be located at a side of the thin film transistor T away from the substrate, so that the structure of the thin film transistor T and the like can be prevented from reflecting the external light entering from a side of the driving circuit layer 20 away from the substrate 10, and at the same time, the second sub-portion 412 is located at a side wall of the light hole 20a close to the pixel area A2, so that the second sub-portion 412 can block the light entering from the light hole 20a, and thus can prevent the light entering from the light hole 20a from reaching the structure of the thin film transistor T and the like through the side wall of the light hole 20a to form reflected light.
In an alternative embodiment, fig. 5 is a schematic cross-sectional structure taken along the section B3-B2 in fig. 1, where, as shown in fig. 5, the fourth portion 42 located in the routing area A3 may also include two sub-portions, that is, the fourth portion 42 may include a third sub-portion 421 and a fourth sub-portion 422 connected to each other; the fourth sub-portion 422 is located between the third sub-portion 421 and the light hole 20 a; at least a portion of the distance between the fourth sub-portion 422 and the substrate 10 is smaller than the distance between the third sub-portion 421 and the substrate 10. At this time, the third sub-portion 421 may be located at a side of the signal trace 51 away from the substrate 10, so that external light can be prevented from entering from a side of the driving circuit layer 20 away from the substrate 10, and being reflected by structures such as the signal trace 51; meanwhile, the fourth sub-portion 422 is located at the side wall of the light hole 20a near the wiring area A3, so that the fourth sub-portion 422 can shield the light entering through the light hole 20a, and thus the light entering through the light hole 20a can be prevented from reaching the structures such as the signal wiring 51 and the like through the side wall of the light hole 20a to form reflection, the reflected light in the display panel can be reduced, and the display effect of the display panel is further improved.
Optionally, referring to fig. 4, the orthographic projection of the third portion 41 on the plane of the substrate 10 is located within the orthographic projection of the first portion 31 on the plane of the substrate 10.
For example, when the third portion 41 includes the first sub-portion 411 and the second sub-portion 412, the first portion 31 of the first film layer 30 may cover both the first sub-portion 411 and the second sub-portion 412 in a direction perpendicular to the plane of the substrate 10, i.e., the first portion 31 may include a structure on a side of the first sub-portion 411 facing away from the substrate 10 and a structure on a side of the second sub-portion 412 facing toward the light-transmitting area A1, and at this time, the structure on the side of the first sub-portion 411 facing away from the substrate 10 may protect the first sub-portion 411, and the structure on the side of the first sub-portion 411 facing away from the substrate 10 and the structure on the side of the second sub-portion 412 facing toward the light-transmitting area A1 may protect the second sub-portion 412. In this way, by having the orthographic projection of the third portion 41 on the plane of the substrate 10 within the orthographic projection of the first portion 31 on the plane of the substrate 10, the first portion 31, including the third portion 41, can be made to be protected from damage or erosion in all directions.
Based on the same principle, with continued reference to fig. 5, the orthographic projection of the fourth portion 42 on the plane of the substrate 10 is located within the orthographic projection of the second portion 32 on the plane of the substrate 10.
Specifically, when the fourth portion 42 includes the third sub-portion 421 and the fourth sub-portion 422, in the direction perpendicular to the plane where the substrate 10 is located, the second portion 32 of the first film layer 30 may cover both the third sub-portion 421 and the fourth sub-portion 422, that is, the second portion 32 may include a structure located at a side of the third sub-portion 421 facing away from the substrate 10 and a structure located at a side of the fourth sub-portion 422 facing close to the light-transmitting area A1, where the structure located at a side of the third sub-portion 421 facing away from the substrate 10 can protect the third sub-portion 421, and the structure located at a side of the third sub-portion 421 facing away from the substrate 10 and the structure located at a side of the fourth sub-portion 422 facing close to the light-transmitting area A1 can protect the fourth sub-portion 422. In this way, by having the orthographic projection of the fourth portion 42 on the plane of the substrate 10 within the orthographic projection of the second portion 32 on the plane of the substrate 10, the second portion 32 is able to be protected from damage or erosion in all directions.
Optionally, with continued reference to fig. 3 or fig. 4, an edge of the first portion 31 closest to the light-transmitting area A1 is a first edge L1; the edge L1 of the third portion 41 closest to the light-transmitting area A1 is a third edge L3; in the overlapped first portion 31 and third portion 41, a distance between the first edge L1 and the third edge L3 near the same light-transmitting area A1 is Δl1; wherein, delta L1 is less than or equal to 2.8 mu m and less than or equal to 3.5 mu m.
Specifically, the thickness of the first film layer 30 located at the side of the black pixel defining layer 40 is between 2.8 μm and 3.5 μm, so that the side structure of the first film layer 30 near the light-transmitting area A3 has a better protection effect on the second sub-portion 412 of the black pixel defining layer 40, and can ensure the light transmission amount of the light-transmitting area A3. In addition, the first film layer 30 may be an organic film layer, and at this time, the organic film layer is usually disposed in a coating manner, and a distance Δl1 between the first edge L1 and the third edge L3 near the same light-transmitting area A1 is set to be 2.8 μm and Δl1 and is less than or equal to 3.5 μm, so that the first film layer 30 is convenient to be coated in the process of the technological process, and the first film layer 30 located on the driving circuit layer 20 near the side edge of the light-transmitting area A1 may have a thicker thickness, so as to ensure that the first portion 31 of the first film layer 30 is not broken in the coating process.
Based on the same principle, referring to fig. 3 or fig. 5, the edge of the second portion 32 near the light-transmitting area may be further set to exceed the edge Δl1 of the fourth portion 42 near the light-transmitting area A1, so that the side structure of the first film layer 30 near the light-transmitting area A3 has a better protection effect on the fourth sub-portion 422 of the black pixel defining layer 40, and meanwhile, the light transmission amount of the light-transmitting area A3 can be ensured. In addition, when the first film layer 30 may be an organic film layer, it is convenient to apply the first film layer 30 during the process, and it is ensured that the second portion 32 of the first film layer 30 does not break during the application process.
It is understood that the above-mentioned distance between the third side L3 of the third portion 41 and the first side L1 of the first portion 31 may be understood as the thickness of the first portion 31 located at the sidewall of the light hole 20a, and the thickness of the first portion 31 located at the side of the thin film transistor T facing away from the substrate 10 and the thickness of the second portion 32 located at the side of the signal trace 51 facing away from the substrate 10 may be the same as or different from the thickness.
In an alternative embodiment, referring to fig. 4 and 5, the thickness T0 of the first film layer 30 is in the range of 0 μm < T0.ltoreq.0.5 μm along the direction perpendicular to the plane of the substrate base plate 10. In this way, while the first film layer 30 located at the side of the black pixel defining layer 40 away from the substrate 10 has a good protection effect on the black pixel defining layer 40, the thickness of the display panel can be reduced, which is beneficial to the thinning of the display panel.
Optionally, fig. 6 is a schematic cross-sectional view of another embodiment of the present invention taken along a section B1-B2 in fig. 1, where the black pixel defining layer 40 further includes a first pixel opening 40B located in the pixel area A2; the first film layer 30 includes a second pixel opening 30b located in the pixel area A2; the first pixel opening 40b overlaps 30b with the second pixel opening in a direction perpendicular to the plane of the substrate base plate 10; the display panel further includes: a connection electrode 60 located at least in the first pixel opening 40b; at least part of the connection electrode 60 is electrically connected to the thin film transistor T through the via hole; a eutectic layer 70 located on a side of the connection electrode 60 facing away from the substrate base plate 10; the light emitting element 80 is electrically connected to the connection electrode 60 through the eutectic layer 70.
Specifically, by providing the first pixel opening 40b and providing the connection electrode 60 in the first pixel opening 40b, at least part of the connection electrode 60 is electrically connected to the thin film transistor T through the via hole, and providing the eutectic layer 70 on the side of the connection electrode 60 facing away from the substrate 10, so that the light emitting element 80 may be bonded to the eutectic layer 50, and electrically connected to the connection electrode 60 through the eutectic layer 70, the thin film transistor T may transmit a driving signal to the light emitting element 80 through the connection electrode 60 and the eutectic layer 70, thereby realizing light emission control of the light emitting element 80. By way of example, the light emitting elements in embodiments of the present invention may include, but are not limited to, micro LEDs or mini LEDs, etc.
It will be appreciated that when the eutectic layer 70 is formed on the side of the connection electrode 60 away from the substrate 10, a sacrificial layer is first formed on the side of the black pixel defining layer 40 away from the substrate 10, then the sacrificial layer is etched, such that at least part of the connection electrode 60 is exposed by the sacrificial layer forming opening, then the eutectic layer 70 is formed on the side of the connection electrode 60 away from the substrate 10 by using the sacrificial layer as a mask, and then the sacrificial layer is stripped, so that only the eutectic layer 70 on the side of the connection electrode 60 away from the substrate 10 is remained. In peeling the sacrificial layer, it is generally necessary to use a dose of an etching liquid having an etching effect on the black pixel defining layer 40, so that the black pixel defining layer 40 is discolored, thereby affecting the light shielding performance of the black pixel defining layer 40. Therefore, before the sacrificial layer is formed, the first film layer 30 may be disposed on the side of the black pixel defining layer 40 away from the substrate 10, so that the sacrificial layer may be formed on the side of the first film layer 30 away from the substrate 10, that is, the sacrificial layer may not directly contact the black pixel defining layer, but contact the first film layer 30, so that when the sacrificial layer is stripped, the etching liquid may not contact the black pixel defining layer 40, and the black pixel defining layer 40 may be prevented from fading, so that the first film layer 30 has a good protection effect on the black pixel defining layer 40. Meanwhile, the heights of the first film layer 30 on the surfaces of the pixel area A2 and the routing area A3 are kept consistent, so that the light emitting element 80 can be controlled to fall down at a lower height when the light emitting element 80 is bonded with the connection electrode 60 through the eutectic layer 50, so that the light emitting element 80 can be ensured to be accurately bonded with the connection electrode 60, the bonding yield of the light emitting element is improved, and the low cost of the display panel is facilitated.
Alternatively, referring to fig. 6, the edge of the first portion 31 closest to the second pixel opening 30b is a second edge L2, and the edge of the third portion 41 closest to the first pixel opening 40b is a fourth edge L4; in the overlapped first and third portions 31 and 41, a distance between the second and fourth sides L2 and L4 corresponding to the overlapped first and second pixel openings 40b and 30b is Δl2; wherein, delta L2 is less than or equal to 2.8 mu m and less than or equal to 3.5 mu m.
Specifically, when the first pixel opening 40b and the second pixel opening 30b are formed, edges of the first portion 31 and the third portion 41 located on the same side of the first pixel opening 40b and the second pixel opening 30b, that is, the second side L2 of the first portion 31 closest to the side of the second pixel opening 30b and the fourth side L4 of the third portion 41 closest to the side of the first pixel opening 40b, the distance Δl2 between the two sides satisfies 2.8 μm Δl2 and 3.5 μm, so as to ensure that the first film layer 30 on the side wall of the black pixel defining layer 40 near the first pixel opening 40b has a thicker thickness, and the first film layer 30 covering the side wall of the black pixel defining layer 40 near the first pixel opening 40b has a better protection effect on the black pixel defining layer 40 on the portion. In addition, when the first film layer 30 is an organic film layer, it can be ensured that the first film layer 30 does not break the film during the coating process. Meanwhile, the interval range delta L2 at the pixel opening is consistent with the interval range delta L1 at the light hole, which is beneficial to simplifying the process.
Optionally, with continued reference to fig. 6, the driving circuit layer 20 includes at least one first inorganic layer 21 and at least one organic layer 22; the first inorganic layer 21 is located on one side of the organic layer 22 close to the substrate base plate; the first inorganic layer 21 includes a third opening 21a at least in the light-transmitting area A1; the organic layer 22 includes a fourth opening 22a at least in the light-transmitting region A1; in the third opening 21a and the fourth opening 22a located in the same light-transmitting area A1, the orthographic projection of the third opening 21a on the plane of the substrate 10 is located in the orthographic projection of the fourth opening 22a on the plane of the substrate 10.
The driving circuit layer 20 may include a plurality of inorganic layers and a plurality of organic layers, the inorganic layers may include, for example, a buffer layer located on a side of the substrate 10, a semiconductor layer located on a side of the buffer layer away from the substrate 10, a gate layer located on a side of the semiconductor layer away from the substrate 10, a source drain electrode layer located on a side of the gate away from the substrate 10, and a partial insulating layer located between two adjacent film layers, and the like, at least one inorganic layer (e.g., the buffer layer) may be used as the first inorganic layer 21, and the third opening 21a located in the light transmitting region A1 may be provided in the first inorganic layer 21; the organic layer may include a portion of an insulating layer, a planarization layer at a side of the thin film transistor T facing away from the substrate 10, and the like, and at least the fourth opening 22a at the light-transmitting region A1 may be provided in the organic layer 22. Since the organic layer and the inorganic layer are different in preparation process, the organic layer and the inorganic layer are generally prepared separately, i.e., after the third opening 21a of the first inorganic layer 21 is completed, the organic layer 22 and the fourth opening 22a of the organic layer 22 are formed; when the organic layer 22 is perforated, the organic layer 22 has fluidity, so that the material of the organic layer 22 flows into the third opening 21a along the sidewall of the third opening 21a, thereby affecting the light transmittance of the entire light-transmitting region A1. By making the fourth opening 22a formed by the organic layer 22 cover the third opening 21a formed by the first inorganic layer 21, that is, making the fourth opening 22a formed by the organic layer 22 larger than the third opening 21a, the material having fluidity in the organic layer 22 is not in contact with the side wall of the third opening 21a when the fourth opening 22a is formed, and does not flow into the third opening 21a, thereby ensuring that the light transmitting area A1 has a high light transmittance.
Optionally, fig. 7 is a schematic structural diagram of another display panel provided by the embodiment of the present invention, and fig. 8 is a schematic sectional structure along a section B2-B3 in fig. 7 provided by the embodiment of the present invention, and referring to fig. 7 and fig. 8, the routing area A3 includes a first routing area a31 and a second routing area a32 located at opposite sides of the light-transmitting area A1; the width of the first wiring area a31 in the second direction S2 is different from the width of the second wiring area a32 in the second direction S2; the thickness of the second portion 32 located in the first routing area a31 along the direction perpendicular to the plane of the substrate 10 is T2; the maximum height difference between the side surface of the second portion 32 located in the first routing area a31 facing away from the substrate 10 and the side surface of the second portion 32 located in the second routing area a32 facing away from the substrate 10 is Δh1; wherein, the ratio of I delta H1I/T2 is less than or equal to 5 percent.
Specifically, the routing area A3 may be disposed on two opposite sides of the light-transmitting area A1, so that each signal routing is disposed on two opposite sides of the light-transmitting area A1 in a dispersed manner, or, as shown in fig. 7, the display panel may include a plurality of light-transmitting areas A1 arranged along the second direction S2, for example, may include three light-transmitting areas A1 arranged along the second direction S2, and at this time, the middle light-transmitting area A1 needs to be disposed on two opposite sides of the light-transmitting area A1 along the second direction S2, so that the routing area A3 may include a first routing area a31 and a second routing area a32 along the second direction S2. Since the number or types of signal traces disposed in the different trace areas A3 may be different, the different trace areas A3 may have different widths, for example, the width of the first trace area a31 in the second direction S2 is different from the width of the second trace area a32 in the second direction S2. The maximum height difference between the side surface of the second portion 32 located at the first routing area a31 facing away from the substrate 10 and the side surface of the second portion 32 located at the second routing area a32 facing away from the substrate 10 is Δh1, where Δh1 satisfies |Δh1|/t2+.ltoreq.5%, i.e. the maximum height difference Δh1 between the side surface of the second portion 32 located at the first routing area a31 facing away from the substrate 10 and the side surface of the second portion 32 located at the second routing area a32 facing away from the substrate 10 is not more than 5% of the thickness T2 of the second portion 32 located at the first routing area a31, so that the height of the side surface of the second portion 32 located at the first routing area a31 facing away from the substrate 10 is substantially consistent with the height of the side surface of the second portion 32 located at the second routing area a32, and thus the first film layer 30 located at the first routing area a31 and the first film layer 30 located at the second routing area a32 have a good simplified flatness, which is advantageous for the first film layer 30 to be manufactured after the other processes are performed.
Wherein, when the maximum height difference Δh1 between the side surface of the second portion 32 located in the first routing area a31 facing away from the substrate 10 and the side surface of the second portion 32 located in the second routing area a32 facing away from the substrate 10 satisfies |Δh1|/t2+.ltoreq.5%, the thickness of the second portion 32 located in the first routing area a31 in the direction perpendicular to the plane of the substrate 10 may be the same as or different from the thickness of the second portion 32 located in the second routing area a32 in the direction perpendicular to the plane of the substrate 10, which is not particularly limited in the embodiment of the present invention.
In an alternative embodiment, fig. 9 is a schematic cross-sectional structure taken along the section B1-B4 in fig. 7, and as shown in fig. 7 and fig. 9, the pixel area A2 may further include a first pixel area a21 and a second pixel area a22, where the width of the first pixel area a21 and the width of the second pixel area a22 are different along the first direction; the thickness of the first portion 31 located in the first pixel region a21 along the direction perpendicular to the plane in which the substrate base plate 10 is located is T3; the maximum height difference between the side surface of the first portion 31 located at the first pixel region a21 facing away from the substrate 10 and the side surface of the first portion 31 located at the second pixel region a22 facing away from the substrate 10 is Δh2; wherein, deltaH2/T3 is less than or equal to 5 percent.
Specifically, the display panel may further include pixel areas A2 having different widths along the first direction S1, for example, since the size of the blue light emitting element 81 is larger than that of the red light emitting element 82, the width of the first pixel area a21 along the first direction S1 where the blue light emitting element 81 is located is larger than the width of the second pixel area a22 along the first direction S1 where the red light emitting element 82 is located. The maximum height difference between the side surface of the first portion 31 of the first pixel area a21 facing away from the substrate 10 and the side surface of the first portion 31 of the second pixel area a22 facing away from the substrate 10 is Δh2, where Δh2 satisfies |Δh2|/t3+.ltoreq.5%, i.e. the maximum height difference Δh2 between the side surface of the first portion 31 of the first pixel area a21 facing away from the substrate 10 and the side surface of the first portion 31 of the second pixel area a22 facing away from the substrate 10 is not more than 5% of the thickness T3 of the first portion 31 of the first pixel area a21, so that the height of the side surface of the first portion 31 of the first pixel area a21 facing away from the substrate 10 and the side surface of the first portion 31 of the second pixel area a22 facing away from the substrate 10 is substantially consistent, and thus the first film layer 30 of the first pixel area a21 and the first film layer 30 of the second pixel area a22 have good flatness, which is advantageous for further processing after the first film layer 30 is manufactured.
Wherein, when the maximum height difference Δh2 between the side surface of the first portion 31 located in the first pixel area a21 facing away from the substrate 10 and the side surface of the first portion 31 located in the second pixel area a22 facing away from the substrate 10 is equal to or less than or equal to 5%, the thickness of the first portion 31 located in the first pixel area a21 in the direction perpendicular to the plane of the substrate 10 may be the same as or different from the thickness of the first portion 31 located in the second pixel area a22 in the direction perpendicular to the plane of the substrate 10, which is not particularly limited in the embodiment of the present invention.
Based on the same inventive concept, the embodiment of the present invention further provides a method for manufacturing a display panel provided by any embodiment of the present invention, so that the method for manufacturing a display panel provided by any embodiment of the present invention includes technical features of the display panel provided by any embodiment of the present invention, so that beneficial effects of the display panel provided by any embodiment of the present invention can be achieved, and the same points can be referred to the above description of the display panel provided by any embodiment of the present invention, which is not repeated herein.
The display panel comprises a light transmission area, a pixel area and a wiring area, wherein the pixel area is positioned at one side of the light transmission area along a first direction, the wiring area is positioned at one side of the light transmission area along a second direction, and the first direction and the second direction are intersected; the width of the pixel region in the first direction is different from the width of the wiring region in the second direction. It can be understood that, since the width of the pixel region in the first direction is different from the width of the trace region in the second direction, when the pixel region and the trace region form a corresponding film layer, the flatness of the whole display panel is affected due to the flowability of the film layer.
In order to solve the above technical problems, fig. 10 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention, and fig. 11 is a schematic structural diagram of a manufacturing process of a display panel according to an embodiment of the present invention, where, as shown in fig. 10, the method for manufacturing a display panel includes:
s110, providing a substrate base plate.
Specifically, the substrate may be a rigid substrate, for example, may be a glass substrate; the substrate may also be a flexible substrate, in which case the substrate is made of a flexible material, which may be at least one of Polyimide (PI) and polyethylene terephthalate (polyethylene terephthalate, PET), for example.
S120, forming a driving circuit layer on one side of the substrate.
Wherein the driving circuit layer comprises a thin film transistor; the thin film transistor is located in the pixel region.
Specifically, referring to fig. 11, the driving circuit layer 20 may include a thin film transistor T including an active layer, a gate electrode, a source electrode, and a drain electrode. In preparing the driving circuit layer 20, a buffer layer may be first formed on the substrate base plate 10, then a semiconductor layer is formed on a side of the buffer layer facing away from the substrate base plate 10, and the semiconductor layer is patterned to form an active layer of the thin film transistor; forming an insulating layer on one side of the semiconductor layer, which is away from the substrate, forming a gate layer on one side of the insulating layer, which is away from the substrate, and patterning the gate layer to form a gate of the thin film transistor; after an insulating layer is formed on a side of the gate layer facing away from the substrate, a source-drain electrode layer is formed on a side of the insulating layer facing away from the substrate 10, and the source-drain electrode layer is patterned to form a source electrode and a drain electrode of the thin film crystal. In addition, the driving circuit layer may further include other film layers, which may be sequentially formed according to the lamination sequence of the film layers, which will not be described herein.
In addition, while forming the structures such as the thin film transistor T in the pixel area A2, the signal trace 51 is formed in the trace area A3, so that the signal trace 51 is disposed on at least part of the structural equivalent layer of the thin film transistor T in the pixel area A2, which is beneficial to simplifying the process, reducing the number of layers disposed in the display panel, and thus the display panel has the characteristics of low cost and light weight.
S130, forming a first film layer on one side of the driving circuit layer, which is away from the substrate.
As shown in fig. 11, the first film layer includes a first opening 30a located in the light-transmitting area A1, a first portion 31 located in the pixel area A2, and a second portion 32 located in the routing area A3; the thickness of the first portion 31 is H1 in a direction perpendicular to the plane in which the substrate 10 is located; the difference in height between the surface of the first portion 31 on the side facing away from the substrate base plate 10 and the surface of the second portion 32 on the side facing away from the substrate base plate 10 is Δh; wherein |delta H|/H1 is less than or equal to 5 percent.
Specifically, the first film layer 30 may be an organic film layer or an inorganic film layer. When the first film layer 30 is an inorganic film layer, the first film layer 30 may be deposited on the side of the driving circuit layer 20 facing away from the substrate 10 by deposition. When the first film layer 30 is an organic film layer, the first film layer 30 may be formed on the side of the driving circuit layer 20 facing away from the substrate 10 by a coating process or the like, and the difference in height Δh between the surface of the first portion 31 of the first film layer 30 facing away from the substrate 10 and the surface of the second portion 32 facing away from the substrate 10 may satisfy |Δh|/h1+.5%.
According to the embodiment of the invention, the first film layer is formed on the side, away from the substrate, of the driving circuit layer after the driving circuit layer comprising the thin film transistor is formed on the side, away from the substrate, of the substrate, and the first film layer comprises the first opening in the light transmission area, the first part in the pixel area and the second part in the wiring area, so that on the premise that good light transmittance of the light transmission area is ensured, the surface heights of the side, away from the substrate, of the first part and the surface of the side, away from the substrate, of the second part are kept consistent, so that good flatness of the display panel is ensured, the process procedure after the first film layer of the display panel is facilitated, for example, when the display panel comprises the light-emitting element, the arrangement of the light-emitting element after the first film layer is facilitated, and the connection accuracy of the light-emitting element and the corresponding structure of the driving circuit layer is facilitated to be improved.
It can be appreciated that, since the width of the pixel area in the first direction is different from the width of the routing area in the second direction, and the pixel area and the routing area are respectively located at different sides of the light transmitting area, and the light transmitting area is generally provided with light transmitting holes, when the first film layer is formed, the flow condition of the material of the first film layer at the pixel area to the light transmitting holes of the light transmitting area is different from the flow condition of the material of the first film layer at the routing area to the light transmitting holes of the light transmitting area, there may be a larger height difference between the surface of one side of the material layer of the first film layer located at the pixel area, which is away from the substrate, and the surface of one side of the material layer of the first film layer located at the routing area, which is away from the substrate, at this time, the first film layer may be patterned by photolithography or the like.
Optionally, fig. 12 is a flowchart of a method for preparing a first film according to an embodiment of the present invention, and fig. 13 is a schematic structural diagram of a process for preparing a first film according to an embodiment of the present invention, where, as shown in fig. 12, the method for preparing a first film includes:
s131, forming a material layer of a first film layer on one side of the driving circuit layer, which is away from the substrate.
And S132, patterning the material layer of the first film layer by adopting a first mask plate so as to remove the material layer of the first film layer positioned in the light transmission area to form a first opening, and removing part of the material layer of the first film layer in the pixel area and/or the wiring area to form a first part and a second part respectively.
Specifically, as shown in fig. 13, a material layer with a thicker thickness may be coated on the side of the driving circuit layer 20 facing away from the substrate 10, for example, may be 4 μm, so as to ensure the integrity of the material layer of the first film layer located on the side of the driving circuit layer facing away from the substrate; at this time, the thickness of the material layer of the first film layer is larger, and there are cases that the surface height of the material layer of the first film layer of the pixel region, which faces away from the substrate, is different from the surface height of the material layer of the first film layer of the trace region, which faces away from the substrate; therefore, after the material layer of the first film layer is formed, the material layer of the first film layer may be patterned by using the first mask plate 01, that is, the material layer of the first film layer 30 located in the light-transmitting area A1 is removed to form the first opening 30a, and the material layer of the first film layer located in the pixel area and/or the routing area is appropriately removed to form the first portion 31 and the second portion 32 according to the surface height of the material layer of the first film layer at the pixel area A2 on the side facing away from the substrate and the surface height of the material layer of the first film layer at the routing area on the side facing away from the substrate.
The material layer of the first film layer 30 may be a positive photoresist material or a negative photoresist material, which is not particularly limited in the embodiment of the present invention. Wherein the exposed portion of the positive photoresist material is dissolved in the developing solution by the photochemical reaction, the unexposed portion is not dissolved in the developing solution, the exposed portion of the negative photoresist is not dissolved in the resist developing solution by the crosslinking curing, and the unexposed portion is dissolved in the developing solution, for convenience of explanation, the following embodiments will take the material layer of the first film layer 30 as a positive photoresist material as an example without specific explanation.
Optionally, with continued reference to fig. 13, the first reticle 01 includes a first region 01a, a second region 01b, and a third region 01c; the first region 01a corresponds to the pixel region A2, the second region 01b corresponds to the wiring region A3, and the third region 01c corresponds to the light-transmitting region A1; the light transmittance of the third region 01c is greater than the light transmittance of the first region 01a and the light transmittance of the second region 01 b; referring to fig. 1 in combination, the width of the pixel region A2 in the first direction S1 is greater than the width of the trace region A3 in the second direction S2, and at least a portion of the first region 01a has a light transmittance greater than that of the second region S2; alternatively, the width of the pixel area A2 in the first direction S1 is smaller than the width of the trace area A3 in the second direction S2, and at least a portion of the light transmittance of the first area 01a is smaller than the light transmittance of the second area 01 b.
Specifically, when the first mask 01 is used to pattern the first film layer 30, in a direction perpendicular to the plane of the substrate 10, the first region 01a of the first mask 01 may overlap the pixel region A2 of the display panel, the second region 01b may overlap the routing region A3 of the display panel, and the third region 01c may overlap the light-transmitting region A1. Setting the light transmittance of the third region 01c to be greater than the light transmittance of the first region 01a and the light transmittance of the second region 01b can ensure that most of the first film layer 30 of the light transmitting region A3 is removed to form the first opening 30a. In addition, when the width of the pixel area A2 in the first direction S1 is greater than the width of the trace area A3 in the second direction S2, the material layer of the first film layer 30 located in the trace area A3 flows toward the light holes 20a of the light-transmitting area A1 on both sides thereof, so that the thickness of the first film layer 30 located on the side of the trace setting layer facing away from the substrate 10 is thinner; the material layer of the first film layer 30 located in the pixel area A2 only near the light transmission hole 20a of the light transmission area A1 flows into the light transmission hole 20a, so that most of the material layer of the first film layer 30 in the pixel area A2 has a thicker thickness; at this time, the light transmittance of at least part of the first region 01a may be greater than that of the second region 01b, so that the material layer of the first film layer corresponding to the first region 01b has a larger exposure amount, and the material layer of the first film layer corresponding to the second region 01b has a smaller exposure amount, so that the removal amount of the material layer of the first film layer 30 in the pixel region A2 is greater than that of the material layer of the first film layer 30 in the trace region A3 in the subsequent development process, so as to form the first portion 31 located in the pixel region A2 and the second portion 32 located in the trace region A3, respectively, so as to ensure that the surface heights of the first portion 31 and the second portion 31 of the first film layer 30 facing away from the side surface of the substrate 10 and the side surface of the second portion 32 facing away from the substrate 10 remain consistent.
Based on the same principle, when the width of the pixel area A2 in the first direction S1 is smaller than the width of the trace area A3 in the second direction S2, the light transmittance of at least a portion of the first area 01a may be set smaller than the light transmittance of the second area 01b, so as to achieve the effect that the surface heights of the first portion 31 of the first film layer 30 facing away from the substrate 10 and the surface of the second portion 32 facing away from the substrate 10 are relatively consistent.
It is understood that the light transmittance of the third region 01c is greater than the light transmittance of the first region 01a and the light transmittance of the second region 01b, that is, the light transmittance of the third region 01c may be 100%, and the light transmittance of the first region 01a and the light transmittance of the second region 01b may be less than 100%, which may be designed according to need, and the embodiment of the present invention is not particularly limited.
In an alternative embodiment, the routing area may include a first routing area and a second routing area located on opposite sides of the light-transmitting area; in order to solve the problem, fig. 14 is a schematic structural diagram of another preparation process of the first film layer according to the embodiment of the present invention, as shown in fig. 14, the light transmittance of at least a portion of the second region 01b1 corresponding to the first routing region a31 is greater than the light transmittance of the second region 01b2 corresponding to the second routing region a 32.
Specifically, when the width of the first routing area a31 along the second direction S2 is greater than the width of the second routing area a32 along the second direction S2, the thickness of the first film layer 30 located in the second routing area a32 is thinner due to the flow of the first film layer 30 located in the second routing area a32 to the two sidewalls. In the first routing area a31, only the first film layer 30 located at the edge portion of the first routing area a31 is thinner due to fluidity, and the first film layer 30 located at the middle portion of the first routing area a31 is thicker. Therefore, the light transmittance of at least a portion of the second region 01b1 corresponding to the first routing region a31 may be set to be greater than the light transmittance of the second region 01b2 corresponding to the second routing region a32, so that the material layer of the first film layer corresponding to the first routing region a31 has a larger exposure amount, while the material layer of the first film layer corresponding to the second routing region a32 has a smaller exposure amount, so that during the subsequent development process, the removal amount of the material layer of the first film layer 30 in the first routing region a31 is greater than the removal amount of the material layer of the first film layer 30 in the second routing region a32, so as to ensure that the heights of the side surface of the first film layer 30 located in the first routing region a31 facing away from the substrate 10 and the side surface of the first film layer 30 located in the second routing region a32 facing away from the substrate 10 remain substantially consistent.
Similarly, when the width of the second trace area a32 along the second direction S2 is greater than the width of the first trace area a31 along the second direction S2, the light transmittance of at least a portion of the second area 01b2 corresponding to the second trace area a32 may be set to be greater than the light transmittance of the second area 01b1 corresponding to the first trace area a31, so that the material layer of the first film layer corresponding to the second trace area a32 has a larger exposure amount, and the material layer of the first trace area a31 and the material layer of the corresponding first film layer have a smaller exposure amount, so that the removal amount of the material layer of the first film layer 30 in the second trace area a32 is greater than the removal amount of the material layer of the first film layer 30 in the first trace area a31 in a subsequent development process, so as to achieve the effect of substantially keeping the height of the first film layer 30 located in the first trace area a31 facing away from the substrate 10 and the side of the first film layer 30 located in the second trace area a32 facing away from the substrate 10.
Based on the same principle, the pixel region comprises a first pixel region and a second pixel region; in order to solve the problem, fig. 15 is a schematic structural diagram of a preparation process of a first film layer according to an embodiment of the present invention, as shown in fig. 15, a light transmittance of at least a portion of a second region 01a1 corresponding to a first pixel region a21 is greater than a light transmittance of a second region 01A2 corresponding to a second pixel region a 22.
Specifically, the material layer of the first film layer corresponding to the first pixel area a21 has a larger exposure, and the material layer of the first film layer corresponding to the second pixel area a22 has a smaller exposure, so that in the subsequent development process, the removal amount of the material layer of the first film layer 30 in the first pixel area a21 is larger than the removal amount of the material layer of the first film layer 30 in the second pixel area a22, so as to ensure that the heights of the first film layer 30 in the first pixel area a21 and the first film layer 30 in the second pixel area a22 are kept substantially consistent.
On the basis of the above embodiment, fig. 16 is a flowchart of another method for manufacturing a display panel according to the embodiment of the present invention, and fig. 17 is a schematic structural diagram of another manufacturing process of a display panel according to the embodiment of the present invention, where, as shown in fig. 16, the method for manufacturing a display panel includes:
s310, providing a substrate base plate.
S320, forming a driving circuit layer on one side of the substrate.
S330, forming a black pixel definition layer at least on one side of the driving circuit layer away from the substrate.
The black pixel defining layer includes a second opening 40a in the light-transmitting region, a third portion 41 in the pixel region A2, and a fourth portion 42 in the routing region A3.
Specifically, referring to fig. 16, before forming the first film layer 30, a black pixel defining layer 40 is formed on a side of the driving circuit board 20 facing away from the substrate 10, i.e., a material of the black pixel defining layer 40 is coated on a side of the driving circuit board 20 facing away from the substrate 10, and then the black pixel defining layer 40 is patterned.
The material of the black pixel defining layer 40 may be a positive photoresist material or a negative photoresist material, and the embodiment of the present invention is not particularly limited thereto, and the preparation process thereof will be described by using the material of the black pixel defining layer 40 as a negative photoresist material. When the material of the black pixel defining layer 40 is a negative photoresist material, it may be provided that a region overlapping the light transmitting region A1 of the mask plate for patterning the black pixel defining layer 40 has a smaller light transmittance and a region overlapping the pixel region A2 and the routing region A3 has a larger light transmittance to form the second opening 40a at the light transmitting region A1, the third portion 41 at the pixel region A2, and the fourth portion 42 at the routing region A3.
S340, forming a material layer of the first film layer on one side of the driving circuit layer, which is away from the substrate.
And S350, patterning the material layer of the first film layer by adopting a first mask plate so as to remove the material layer of the first film layer positioned in the light transmission area to form a first opening, and removing part of the material layer of the first film layer in the pixel area and/or the wiring area to form a first part and a second part respectively.
Illustratively, when the material layer of the first film layer is patterned by using the first mask, the first region overlaps the third portion, the second region overlaps the fourth portion, and the third region overlaps the second opening in a direction perpendicular to the plane of the substrate.
Specifically, since the black pixel defining layer 40 includes the second opening 40a located in the light transmitting region A1, the third portion 41 located in the pixel region A2, and the fourth portion 42 located in the routing region A3, the first region 01a and the third portion 41 of the first mask 01 may be correspondingly disposed, the second region 01b and the fourth portion 42 may be correspondingly disposed, the third region 01c and the second opening 40a may be correspondingly disposed, the first portion 31 formed by exposing the first film layer 30 of the first region 01a may be overlapped with the third portion 41, the second portion 32 formed by exposing the first film layer 30 of the second region 01b may be overlapped with the fourth portion 42, and the first opening 30a and the second opening 40a formed by exposing the first film layer 30 of the third region 01c may be correspondingly disposed, so that the first portion 31 may be protected from the third portion 41, the second portion 32 may be protected from the fourth portion 42, and both the first opening 30a and the second opening 40a may be used for light transmission.
Alternatively, with continued reference to fig. 17, the edge of the third portion 41 of the pixel area A2 closest to the light-transmitting area A1 is a third edge L3; the edge of the side, closest to the third area 01c, of the first area 01a is a fifth edge L5; in the overlapped first region 01a and third portion 41, the shortest distance between the fifth side L5 and third side L3 corresponding to the same light-transmitting region A1 is Δl; wherein DeltaL is more than or equal to 2.8 mu m and less than or equal to 3.5 mu m.
Specifically, in the overlapped first region 01a and third portion 41, the boundary of the first region 01a of the first mask 01 is set to exceed the boundary of the third portion 41, that is, the shortest distance Δl between the fifth side L5 and the third side L3 corresponding to the same light-transmitting region A1 is set to be 2.8 μm or less and Δl or less than or equal to 3.5 μm, on the one hand, on the premise that the first opening 30a can be sufficiently large, the opening process setting requirement of the first mask 01 can be met; on the other hand, after the first film layer 30 is formed, the spacing Δl1 between the first edge L1 and the third edge L3 near the same light-transmitting region A1 in the overlapped first portion 31 and third portion 41 can also satisfy 2.8 μm Δl1+.3.5 μm, so that the first film layer 30 near the light-transmitting region A1 side has a thicker thickness, and the portion of the first film layer 30 is prevented from breaking due to a larger exposure, so that the first film layer 30 can sufficiently cover the black pixel defining layer 40, and the black pixel defining layer 40 can be protected from being damaged or corroded in a subsequent process.
Optionally, with continued reference to fig. 17, the driving circuit layer 20 further includes a light hole 20a located in the light-transmitting area A1; the third portion 41 comprises a first sub-portion 411 and a second sub-portion 412 connected; the second sub-portion 412 is located between the first sub-portion 411 and the light hole 20a; at least a portion of the distance between the second sub-portion 412 and the substrate 10 is smaller than the distance between the first sub-portion 411 and the substrate 10; when the first mask 01 is used to pattern the material layer of the first film layer 30, the first region 01a covers at least the first sub-portion 411 in a direction perpendicular to the plane of the substrate 10. In this way, after exposure and development by the first region 01a, the first portion 31 covering at least the first sub-portion 411 can be formed.
Optionally, with continued reference to fig. 17, when the first reticle 01 is used to pattern the material layer of the first film layer 30, the first region 01a also covers the second sub-portion 412 in a direction perpendicular to the plane of the substrate 10.
Specifically, since the light transmittance of the first region 01a is smaller than that of the third region 01c, the first portion 31 can protect the first sub-portion 411 and the second sub-portion 412 at the same time by allowing the first region 01a to cover the first sub-portion 411 and the second sub-portion 412 at the same time so that the material of the first film layer at the first sub-portion 411 and the second sub-portion 412 is not completely removed, thereby forming the first portion 31 that covers the first sub-portion 411 and the second sub-portion 412 at the same time.
Optionally, fig. 18 is a schematic structural diagram of a preparation process of a first film layer according to another embodiment of the present invention, as shown in fig. 17, where the first mask 01 further includes a fourth region 01d; the fourth zone 01d is located between the first zone 01a and the third zone 01 c; when the first mask 01 is used to pattern the material layer of the first film layer 30, the fourth region 01d covers the second sub-portion 412 in a direction perpendicular to the plane of the substrate 10; wherein the light transmittance of the fourth region 01d is smaller than that of the first region 01 a.
Specifically, when the third portion 41 includes the first sub-portion 411 located at a side of the driving circuit layer 20 away from the substrate 10 and the second sub-portion 412 located at a side wall of the light hole 20a of the driving circuit layer 20, the first region 01a may be disposed to cover the first sub-portion 411, the fourth region 01d may be disposed to cover the second sub-portion 412, and the light transmittance of the fourth region 01d may be set to be smaller than that of the first region 01a, so that the thickness of the formed first film layer 30 covering the second sub-portion 412 is thicker, so that the first film layer 30 may be effectively prevented from breaking during the coating process.
Based on the same principle, a fourth region 01d may be disposed between the second region 01b and the third region 01c as well, such that the light transmittance of the fourth region 01d is smaller than that of the second region 01b, thereby enabling the formed second portion 32 to effectively cover the fourth portion 42 to protect the fourth portion 42.
It is understood that the light transmittance of the fourth region 01d is smaller than the light transmittance of the first region 01a and the light transmittance of the second region 01b, and at this time, the light transmittance of the fourth region 01d may be set to 0%, and the light transmittance of the first region 01a and the light transmittance of the second region 01b are both greater than 0%, which may be set as needed, and the embodiment of the present invention is not particularly limited.
Optionally, fig. 19 is a schematic structural diagram illustrating a preparation process of a first film layer according to an embodiment of the present invention, and as shown in fig. 19, the black pixel defining layer 40 further includes a first pixel opening 40b; the first mask 01 further comprises a fifth region 01e; the first region 01a surrounds the fifth region 01e; when the first mask 01 is used to pattern the material layer of the first film layer 30, the fifth region 01e overlaps the first pixel opening 40b in a direction perpendicular to the plane of the substrate 10; the light transmittance of the fifth region 01e is greater than the light transmittance of the first region 01a and the light transmittance of the second region 01 b.
Specifically, in order to enable the thin film transistor T in the driving circuit layer 20 to output a driving signal to the light emitting element, the black pixel defining layer 40 located in the pixel region A2 may further include a first pixel opening 40b, so that the first pixel opening 40b can expose a connection structure (e.g., a connection electrode) of the thin film transistor T and the light emitting element. On this basis, when the first film layer 30 is patterned, the fifth region 01e may be disposed to overlap the first pixel opening 40b, so that the first film layer 30 may be formed to have the second pixel opening 30b located in the pixel region A2, and the second pixel opening 30b may be disposed to overlap the first pixel opening 40b, thereby facilitating the subsequent disposition of the light emitting element.
It is understood that the light transmittance of the fifth region 01e is greater than the light transmittance of the first region 01a and the light transmittance of the second region 01b, that is, the light transmittance of the fifth region 01e may be 100%, and the light transmittance of the first region 01a and the light transmittance of the second region 01b may be less than 100%, which may be designed according to need, and the embodiment of the present invention is not particularly limited.
Alternatively, with continued reference to fig. 19, when the material layer of the first film layer 30 is patterned using the first reticle 01, the first region 01a overlaps a portion of the first pixel opening 40b in a direction perpendicular to the plane of the substrate 10.
Specifically, the first region 01a overlaps a portion of the first pixel opening 40b, and the first film layer 30 may be formed on the sidewall of the black pixel defining layer 40 adjacent to the first pixel opening 40b, so that the first film layer 30 may completely cover the black pixel defining layer 40, and thus the first film layer 30 may effectively protect the black pixel defining layer 40.
Optionally, fig. 20 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention, and fig. 21 is a schematic structural diagram of a manufacturing process of a display panel according to an embodiment of the present invention, where, as shown in fig. 20, the method for manufacturing a display panel includes:
S411, providing a substrate base plate.
S412, forming a thin film transistor on one side of the substrate.
And S413, forming a connection electrode on one side of the thin film transistor, which is away from the substrate.
As shown in fig. 21, at least a part of the connection electrode 60 is electrically connected to the thin film transistor T through a via hole.
Specifically, when forming the driving circuit layer on one side of the substrate 10, the thin film transistor T may be formed on one side of the substrate 10, then a planarization layer may be formed on one side of the thin film transistor T facing away from the substrate, and a through hole penetrating the planarization layer may be provided; a connection electrode layer is formed on a side of the planarization layer facing away from the substrate base plate 10, and the connection electrode layer is patterned to form a connection electrode 60 such that the connection electrode 60 is electrically connected to the thin film transistor T through a via hole penetrating the planarization layer.
And S414, forming a black pixel definition layer at least on one side of the driving circuit layer away from the substrate.
The black pixel definition layer comprises a second opening located in the light transmission area, a third portion located in the pixel area, a fourth portion located in the wiring area and a first pixel opening, and the connecting electrode is located at least in the first pixel opening.
S415, forming a first film layer on one side of the driving circuit layer, which is away from the substrate.
S416, forming a sacrificial layer on one side of the first film layer, which faces away from the substrate.
S417, patterning the sacrificial layer to form a mask opening in the sacrificial layer.
Wherein the width of the mask opening gradually decreases in a direction from the substrate base plate to the sacrificial layer; the mask opening overlaps the first pixel opening in a direction perpendicular to a plane in which the substrate base plate lies.
Specifically, as shown in fig. 21, the sacrificial layer 90 may be etched by an etching solution to achieve patterning of the sacrificial layer 90, or the sacrificial layer 90 may be patterned by photolithography to form a mask opening overlapping the first pixel opening 40 b. In the direction from the substrate 10 to the sacrificial layer 90, the width of the mask opening gradually decreases, so that the eutectic layer formed on the connection electrode 60 and the eutectic layer 70 on the sacrificial layer 90 are independent and disconnected from each other when the eutectic layer is subsequently formed, thereby facilitating the stripping of the subsequent sacrificial layer 90.
And S418, forming a eutectic layer on one side of the connecting electrode, which is away from the substrate, by taking the sacrificial layer as a mask.
The eutectic layer 70 may be made of an inorganic material, and the eutectic layer 70 may be formed on a side of the connection electrode 60 facing away from the substrate by deposition or the like. Since the width of the mask opening gradually decreases in the direction from the substrate 10 toward the sacrificial layer 90, when the eutectic layer is deposited, a step is formed between the eutectic layer 70 on the side of the sacrificial layer 90 facing away from the substrate and the eutectic layer 70 on the side of the connection electrode 60 facing away from the substrate, and a break occurs, so that the eutectic layers 70 of the two parts are independent of each other and are not connected to each other.
S419, stripping the sacrificial layer after forming the eutectic layer.
Specifically, after the eutectic layer 70 is formed, the sacrificial layer 90 is peeled off, leaving only the eutectic layer 70 on the connection electrode 60, so that the light emitting element 80 is bonded to the connection electrode 60 through the eutectic layer 70 in a subsequent process. Wherein, the sacrificial layer 90 may be etched by an etching solution to realize the peeling of the sacrificial layer 90.
It will be appreciated that, since the first film layer 30 is formed on the side of the black pixel defining layer 40 facing away from the substrate 10 before the sacrificial layer 90 is formed, when the sacrificial layer 90 is stripped by using the etching solution, the etching solution does not contact the black pixel defining layer 40, so that the black pixel defining layer 40 is not discolored, that is, the first film layer 30 is formed on the side of the black pixel defining layer 40 facing away from the substrate 10 before the sacrificial layer 90 is formed, so that the first film layer 30 can protect the black pixel defining layer 40, and the negative effect of the black pixel defining layer 40 is ensured.
S420, providing the light-emitting element, and bonding the light-emitting element with the connecting electrode through the eutectic layer.
Specifically, the light emitting element 80 may be transferred to the side of the driving circuit layer 20 facing away from the substrate by mass transfer, so that the light emitting element 80 is bound to the connection electrode 60 through the eutectic layer 70. Meanwhile, since the surface heights of the sides of the display panel, which are away from the substrate 10, are relatively uniform, when the light emitting elements 80 are transferred to the sides of the driving circuit layer 20, which are away from the substrate, the falling heights of the light emitting elements 80 are uniform, and a relatively precise control over the mass transfer of the light emitting elements 80 can be realized, so that the bonding effect of the eutectic layers of the light emitting elements 80 is good.
According to the embodiment of the invention, after the preparation of the black pixel definition layer is completed, the first film layer is formed on the side, away from the substrate, of the black pixel definition layer, after the first film layer is patterned, the sacrificial layer is formed on the side, away from the substrate, of the first film layer, so that the first film layer can protect the black pixel definition layer from being corroded or damaged when the sacrificial layer is peeled off, the surface height of the first film layer, away from the substrate, of each region is consistent, the falling height of each light-emitting element 80 is consistent when the light-emitting elements are transferred onto the display panel, relatively accurate control over mass transfer of each light-emitting element can be realized, and the bonding effect of the eutectic layer of each light-emitting element is good.
Based on the same inventive concept, the embodiments of the present invention also provide a display device, where the display device includes the display panel provided by any embodiment of the present invention, so that the display device provided by any embodiment of the present invention includes technical features of the display panel provided by any embodiment of the present invention, so that beneficial effects of the display panel provided by any embodiment of the present invention can be achieved, and the same points can be referred to the description of the display panel provided by any embodiment of the present invention, and are not repeated herein.
Fig. 22 is a schematic structural diagram of a display device according to an embodiment of the present invention, and the display device 00 may be any electronic product with a display function, including but not limited to the following categories: vehicle-mounted display, VR display, television, notebook computer, desktop display, tablet computer, digital camera, mobile phone, smart bracelet, smart glasses, vehicle-mounted display, medical equipment, industrial control equipment, touch interaction terminal, etc.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (24)
1. A display panel, comprising:
the pixel area is positioned at one side of the light transmission area along a first direction, the wiring area is positioned at one side of the light transmission area along a second direction, and the first direction and the second direction are intersected; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction;
a substrate base;
the driving circuit layer is positioned on one side of the substrate base plate; the driving circuit layer comprises a thin film transistor, and the thin film transistor is positioned in the pixel area;
the first film layer is at least partially positioned on one side of the driving circuit layer, which is away from the substrate base plate; the first film layer comprises a first opening positioned in the light transmission area, a first part positioned in the pixel area and a second part positioned in the wiring area; the thickness of the first part is H1 along the direction vertical to the plane of the substrate base plate; the height difference between the surface of the first part on the side away from the substrate and the surface of the second part on the side away from the substrate is delta H; wherein, the ratio of the I delta H I to the H1 is less than or equal to 5 percent.
2. The display panel of claim 1, further comprising:
A black pixel defining layer located between the first film layer and the driving circuit layer; the black pixel definition layer comprises a second opening positioned in the light transmission area, a third part positioned in the pixel area and a fourth part positioned in the wiring area;
the first portion overlaps the third portion, the second portion overlaps the fourth portion, and the first opening overlaps the second opening in a direction perpendicular to a plane in which the substrate base plate is located.
3. The display panel of claim 2, wherein the driving circuit layer further comprises a light hole in the light-transmitting region;
the third part comprises a first sub-part and a second sub-part which are connected; the second sub-part is positioned between the first sub-part and the light hole;
at least a portion of the second sub-portion is less than the distance between the first sub-portion and the substrate.
4. A display panel as claimed in claim 3, characterized in that the orthographic projection of the third portion in the plane of the substrate lies within the orthographic projection of the first portion in the plane of the substrate.
5. The display panel according to claim 2, wherein an edge of the first portion closest to the light-transmitting region is a first edge; the edge of the third part closest to one side of the light transmission area is a third side;
in the overlapped first part and third part, the distance between the first edge and the third edge which are close to the same light transmission area is delta L1; wherein, delta L1 is less than or equal to 2.8 mu m and less than or equal to 3.5 mu m.
6. The display panel of claim 2, wherein the black pixel definition layer further comprises a first pixel opening in the pixel region; the first film layer comprises a second pixel opening positioned in the pixel area; the first pixel opening and the second pixel opening overlap in a direction perpendicular to a plane in which the substrate base plate is located;
the display panel further includes:
a connection electrode at least located in the first pixel opening; at least part of the connecting electrode is electrically connected with the thin film transistor through a via hole;
the eutectic layer is positioned at one side of the connecting electrode, which is away from the substrate base plate;
and a light-emitting element electrically connected to the connection electrode through the eutectic layer.
7. The display panel according to claim 6, wherein an edge of the first portion closest to the side of the second pixel opening is a second side, and an edge of the third portion closest to the side of the first pixel opening is a fourth side;
in the first and third portions overlapping, a distance between the second side and the fourth side corresponding to the first and second pixel openings overlapping each other is Δl2; wherein, delta L2 is less than or equal to 2.8 mu m and less than or equal to 3.5 mu m.
8. The display panel according to claim 1, wherein the driving circuit layer includes at least one first inorganic layer and at least one organic layer; the first inorganic layer is positioned on one side of the organic layer close to the substrate base plate;
the first inorganic layer comprises a third opening at least in the light-transmitting region; the organic layer comprises a fourth opening at least positioned in the light-transmitting area;
and the orthographic projection of the third opening on the plane of the substrate is positioned in the orthographic projection of the fourth opening on the plane of the substrate.
9. The display panel of claim 1, wherein the routing area comprises a first routing area and a second routing area located on opposite sides of the light-transmitting area; the width of the first wiring area in the second direction is different from the width of the second wiring area in the second direction; the thickness of the second part positioned in the first wiring area is T2 along the direction vertical to the plane of the substrate base plate; the maximum height difference between the side surface of the second part, which is located in the first wiring area and faces away from the substrate base plate, and the side surface of the second part, which is located in the second wiring area and faces away from the substrate base plate, is delta H1; wherein, the ratio of I delta H1I/T2 is less than or equal to 5 percent.
10. The display panel according to claim 1, wherein the thickness T0 of the first film layer is in a range of 0 μm <, along a direction perpendicular to the plane of the substrate
T0≤0.5μm。
11. A method of manufacturing a display panel, the display panel comprising: the pixel area is positioned at one side of the light transmission area along a first direction, the wiring area is positioned at one side of the light transmission area along a second direction, and the first direction and the second direction are intersected; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction;
The preparation method of the display panel comprises the following steps:
providing a substrate;
forming a driving circuit layer on one side of the substrate base plate; the driving circuit layer comprises a thin film transistor; the thin film transistor is positioned in the pixel area;
forming a first film layer on one side of the driving circuit layer, which is away from the substrate base plate; the first film layer comprises a first opening positioned in the light transmission area, a first part positioned in the pixel area and a second part positioned in the wiring area; the thickness of the first part is H1 along the direction vertical to the plane of the substrate base plate; the height difference between the surface of the first part on the side away from the substrate and the surface of the second part on the side away from the substrate is delta H; wherein |delta H|/H1 is less than or equal to 5 percent.
12. The method of claim 11, wherein forming a first film layer on a side of the driving circuit layer facing away from the substrate comprises:
forming a material layer of a first film layer on one side of the driving circuit layer, which is away from the substrate;
patterning the material layer of the first film layer by using a first mask plate to remove the material layer of the first film layer located in the light transmission area to form a first opening, and removing the pixel area and/or part of the wiring area to form the first part and the second part respectively.
13. The method of claim 12, wherein the first reticle comprises a first region, a second region, and a third region; the first region corresponds to the pixel region, the second region corresponds to the wiring region, and the third region corresponds to the light-transmitting region;
the light transmittance of the third region is greater than the light transmittance of the first region and the light transmittance of the second region;
the width of the pixel area in the first direction is larger than that of the wiring area in the second direction, and the light transmittance of at least part of the first area is larger than that of the second area; or, the width of the pixel area in the first direction is smaller than the width of the wiring area in the second direction, and at least part of the light transmittance of the first area is smaller than the light transmittance of the second area.
14. The method of claim 13, wherein the routing area includes a first routing area and a second routing area on opposite sides of the light-transmitting area;
and along the second direction, the width of the first wiring area is larger than that of the second wiring area, and the light transmittance of at least part of the second area corresponding to the first wiring area is larger than that of the second area corresponding to the second wiring area.
15. The method of manufacturing a display panel according to claim 13, further comprising, before forming the first film layer on a side of the driving circuit layer facing away from the substrate base plate:
forming a black pixel definition layer at least on one side of the driving circuit layer away from the substrate base plate; the black pixel definition layer comprises a second opening positioned in the light transmission area, a third part positioned in the pixel area and a fourth part positioned in the wiring area;
when the first mask plate is used for patterning the material layer of the first film layer, the first region overlaps the third part, the second region overlaps the fourth part and the third region overlaps the second opening in a direction perpendicular to the plane of the substrate.
16. The method according to claim 15, wherein an edge of the third portion of the pixel region closest to the light-transmitting region is a third edge; the edge of one side of the first region closest to the third region is a fifth edge;
in the overlapped first region and third portion, the shortest distance between the fifth edge and the third edge corresponding to the same light-transmitting region is Δl; wherein DeltaL is more than or equal to 2.8 mu m and less than or equal to 3.5 mu m.
17. The method of claim 15, wherein the driving circuit layer further comprises a light hole in the light-transmitting region; the third part comprises a first sub-part and a second sub-part which are connected; the second sub-part is positioned between the first sub-part and the light hole; at least a portion of the second sub-portion is less than the distance between the first sub-portion and the substrate;
when the first mask plate is used for patterning the material layer of the first film layer, the first region at least covers the first sub-part in the direction perpendicular to the plane of the substrate.
18. The method of claim 17, wherein the first region further covers the second sub-portion in a direction perpendicular to a plane of the substrate when patterning the material layer of the first film using the first mask.
19. The method of claim 17, wherein the first reticle further comprises a fourth region; the fourth zone is located between the first zone and the third zone;
When a first mask is used for patterning the material layer of the first film layer, the fourth area covers the second sub-part in the direction perpendicular to the plane of the substrate;
wherein the light transmittance of the fourth region is less than the light transmittance of the first region.
20. The method of claim 16, wherein the black pixel defining layer further comprises a first pixel opening;
the first mask plate further comprises a fifth region; the first zone surrounds the fifth zone;
when the first mask is used for patterning the material layer of the first film, the fifth area overlaps the first pixel opening in the direction perpendicular to the plane of the substrate;
the light transmittance of the fifth region is greater than the light transmittance of the first region and the light transmittance of the second region.
21. The method of claim 20, wherein the first region overlaps a portion of the first pixel opening in a direction perpendicular to a plane of the substrate when the material layer of the first film layer is patterned using the first reticle.
22. The method of manufacturing a display panel according to claim 20, wherein forming a driving circuit layer on the substrate side comprises:
forming a thin film transistor on one side of the substrate base plate;
forming a connection electrode on one side of the thin film transistor, which is away from the substrate; at least part of the connecting electrode is electrically connected with the thin film transistor through a via hole.
23. The method of claim 22, wherein the connection electrode is located at least in the first pixel opening after the black pixel defining layer is formed;
after forming the first film layer on one side of the driving circuit layer away from the substrate, the method further comprises:
forming a sacrificial layer on one side of the first film layer, which is away from the substrate base plate;
patterning the sacrificial layer to form a mask opening in the sacrificial layer; the width of the mask opening gradually decreases in a direction from the substrate base plate to the sacrificial layer; the mask opening overlaps the first pixel opening in a direction perpendicular to a plane in which the substrate base plate is located;
forming a eutectic layer on one side of the connecting electrode, which is away from the substrate base plate, by taking the sacrificial layer as a mask;
Stripping the sacrificial layer after forming the eutectic layer;
providing a light emitting element and bonding the light emitting element to the connection electrode through the eutectic layer.
24. A display device, comprising: the display panel of any one of claims 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211736587.3A CN116133471A (en) | 2022-12-30 | 2022-12-30 | Display panel, preparation method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211736587.3A CN116133471A (en) | 2022-12-30 | 2022-12-30 | Display panel, preparation method thereof and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116133471A true CN116133471A (en) | 2023-05-16 |
Family
ID=86307463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211736587.3A Pending CN116133471A (en) | 2022-12-30 | 2022-12-30 | Display panel, preparation method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116133471A (en) |
-
2022
- 2022-12-30 CN CN202211736587.3A patent/CN116133471A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11127763B2 (en) | Display panel and manufacturing method thereof and display device | |
| CN109671726B (en) | Array substrate, manufacturing method thereof, display panel and display device | |
| WO2019174297A1 (en) | Array substrate, manufacturing method therefor, and display apparatus | |
| KR100394069B1 (en) | Identification making portion in liquid crystal display panel and fabricating method thereof | |
| WO2016107039A1 (en) | Array substrate, manufacturing method therefor, and display device | |
| US10381382B2 (en) | Array substrate, method for manufacturing the same and display device | |
| KR100922272B1 (en) | Method for manufacturing liquid crystal display panel and liquid crystal display panel | |
| US20190056818A1 (en) | Touch substrate, method for manufacturing the same, and touch display device | |
| WO2017077995A1 (en) | Display substrate, display device and method for manufacturing display substrate | |
| CN112331703B (en) | Display panel and display device | |
| CN104635416A (en) | Manufacturing method of mask plate and array substrate | |
| JP5306256B2 (en) | Method for manufacturing electric solid device substrate and electric solid device | |
| CN113013211A (en) | Display substrate, preparation method thereof and display device | |
| US10871843B2 (en) | Bonding area structure, method of manufacturing the same, panel and touch display device | |
| US10739930B2 (en) | Mask plate, display substrate, method for manufacturing display substrate, and display device | |
| US11094789B2 (en) | Thin film transistor and method for manufacturing the same, array substrate, and display device | |
| WO2022205852A1 (en) | Display panel and display device | |
| CN114975477A (en) | Display panel, method for manufacturing display panel, and display device | |
| CN109213372B (en) | Touch panel, preparation method thereof and touch device | |
| US11327401B2 (en) | Display substrate, method for preparing the same, and display device | |
| US10859877B2 (en) | Display panel, manufacturing method therof, and display device | |
| CN116133471A (en) | Display panel, preparation method thereof and display device | |
| US11817463B2 (en) | Driving backplane and method for manufacturing the same, and display device | |
| EP3696600A1 (en) | Array substrate and manufacturing method therefor and display device | |
| CN107621897B (en) | Touch panel and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |