CN116131101B - Quantum cascade laser and manufacturing method thereof - Google Patents

Quantum cascade laser and manufacturing method thereof Download PDF

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Publication number
CN116131101B
CN116131101B CN202310350414.6A CN202310350414A CN116131101B CN 116131101 B CN116131101 B CN 116131101B CN 202310350414 A CN202310350414 A CN 202310350414A CN 116131101 B CN116131101 B CN 116131101B
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photonic crystal
layer
quantum cascade
cascade laser
laser
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CN116131101A (en
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郑婉华
廖子源
王宇飞
傅廷
陈静瑄
戴迎秋
刘灵娟
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering

Abstract

The invention provides a quantum cascade laser and a manufacturing method thereof, which are applied to the technical field of semiconductor lasers and comprise the following steps: the light emitting area is used for emitting laser, the filtering area is used for carrying out beam shaping on the laser and outputting the shaped laser, the filtering area comprises a first photonic crystal and a second photonic crystal, the structures of the first photonic crystal and the second photonic crystal are the same, a phase shift area is arranged between the first photonic crystal and the second photonic crystal, and the light emitting area is large in area, and meanwhile, far-field divergence angle is reduced, the beam shape is optimized and emission power is improved.

Description

Quantum cascade laser and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a quantum cascade laser and a manufacturing method thereof.
Background
Laser is another significant invention of mankind after the 20 th century, following atomic energy, electronic computers and semiconductors. The semiconductor laser has the advantages of high power, long service life, low cost, easy integration, high electro-optical conversion efficiency and the like, is widely applied to a plurality of fields in military and civil use, and plays an important role in the laser industry. A quantum cascade laser (Quantum Cascade Laser, QCL) is an excellent mid-infrared light source. The QCL lasing wavelength is not limited by the band gap width of the material, and the lasing wavelength can be controlled by adjusting the thickness combination of the multiple quantum wells in the active region, so that free design cutting is realized.
Compared with an edge emission device, the surface emission quantum cascade laser has better single-mode characteristic, longer service life and small divergence angle, and is beneficial to two-dimensional area array integration. However, due to the specificity of the lasing mode of the quantum cascade laser, the quantum cascade laser cannot be directly manufactured into a vertical cavity surface emitting structure, and therefore, a distributed feedback grating or a photonic crystal is generally adopted to realize vertical emission. In order to develop higher performance arrays, quantum cascade lasers with single mode surface emission and low output divergence angles are needed.
Disclosure of Invention
The invention mainly aims to provide a quantum cascade laser and a manufacturing method thereof, which can reduce far-field divergence angle, optimize beam shape and improve emission power while realizing large-area surface emission.
To achieve the above object, a first aspect of an embodiment of the present invention provides a quantum cascade laser, including:
a light emitting region for emitting laser light;
the filtering area is used for carrying out beam shaping on the laser and outputting the shaped laser, the filtering area comprises a first photonic crystal and a second photonic crystal, the structures of the first photonic crystal and the second photonic crystal are the same, and a phase shift area is arranged between the first photonic crystal and the second photonic crystal.
In an embodiment of the present invention, the width of the phase shift region is 1/2 period, and the period is an arrangement period between dielectric pillars in the first photonic crystal and the second photonic crystal.
In one embodiment of the present invention, each of the first photonic crystal and the second photonic crystal includes a plurality of dielectric pillars arranged in a predetermined lattice type manner.
In one embodiment of the present invention, the predetermined lattice type is a regular polygon.
In an embodiment of the invention, the laser further comprises a P-surface metal electrode layer, an insulating layer and a P-surface cladding layer which are arranged from bottom to top;
the P cladding layer is etched to form a photonic crystal layer, and the photonic crystal layer comprises the filtering region.
In an embodiment of the present invention, the light emitting region includes a P-side confinement layer, an active layer, an N-side confinement layer, an N-side substrate layer, and an N-side metal electrode layer sequentially disposed on the P-side cladding layer.
In an embodiment of the present invention, an electrode window is opened on a corresponding position of the phase shift region and at least a portion of a photonic crystal dielectric pillar, where the photonic crystal is the first photonic crystal and/or the second photonic crystal.
In an embodiment of the invention, the width of the quantum cascade laser is a preset width, and the preset width enables the quantum cascade laser to reach a laterally continuous spectrum bound state.
A second aspect of the embodiment of the present invention provides a method for manufacturing a quantum cascade laser, including:
sequentially growing an N-side metal electrode layer, an N-side substrate layer, an N-side limiting layer, an active region, a P-side limiting layer, a P-side cladding layer, a P-side contact layer, an insulating layer and a P-side metal electrode layer from bottom to top, wherein the P-side cladding layer is etched into a photonic crystal layer, the photonic crystal layer comprises a first photonic crystal and a second photonic crystal, and a phase shift region is arranged between the first photonic crystal and the second photonic crystal;
etching part of the N-side metal electrode layer, the N-side substrate layer, the N-side limiting layer, the active region and the P-side limiting layer until part of the photonic crystal layer is exposed;
etching is carried out on the part of the P cladding layer to form the first photonic crystal and the second photonic crystal, and a phase shift region is arranged between the first photonic crystal and the second photonic crystal.
In an embodiment of the present invention, the width of the phase shift region is 1/2 period, and the period is an arrangement period between dielectric pillars in the first photonic crystal and the second photonic crystal.
As can be seen from the above embodiments of the present invention, the quantum cascade laser and the method for manufacturing the same provided by the present invention can realize a laser light source with low divergence angle and high brightness. The invention does not need secondary epitaxy, reduces the manufacturing cost of the device and improves the reliability; structural symmetry break is introduced, the photonic crystal shape, lattice structure, array phase shift and the like are optimized, beam shaping is realized, and the beam quality and brightness are improved; setting the distribution of the mesh electrodes with the P surface facing downwards, optimizing current injection, improving current uniformity and improving beam quality and output power; and introducing a lateral continuous spectrum binding state (BIC), so that lateral polarization mode coupling anti-cross counteracts single-side mode loss caused by ridge etching with a certain aspect ratio, and the polarization performance is optimized.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are necessary for the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention and that other drawings may be obtained from them without inventive effort for a person skilled in the art.
Fig. 1 is a schematic top view of a quantum cascade laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a photonic crystal layer according to an embodiment of the present invention;
fig. 3 is a schematic bottom view of a quantum cascade laser according to an embodiment of the present invention;
fig. 4 is a flow chart of a method for fabricating a quantum cascade laser according to an embodiment of the invention;
FIG. 5 is a band diagram of a first photonic crystal in a photonic crystal according to the present invention according to an embodiment of the present invention;
FIG. 6 is a diagram showing an electric field mode distribution of band-edge modes Γ2-2 in a single period according to an embodiment of the present invention;
FIG. 7 is a schematic diagram showing a distribution of near-field electric field components Ez of a photonic crystal surface-emitting quantum cascade laser structure after phase-shifting is introduced according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a photonic crystal surface-emitting quantum cascade laser structure incorporating a lateral BIC structure according to an embodiment of the present invention;
FIG. 9 is a graph showing the lateral leakage intensity as a function of ridge width after introducing a lateral BIC structure into a quantum cascade laser structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, features and advantages of the present invention more comprehensible, the technical solutions in the embodiments of the present invention will be clearly described in conjunction with the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, a number means one or more, a number means two or more, and greater than, less than, exceeding, etc. are understood to not include the present number, and above, below, within, etc. are understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
Referring to fig. 1 to 3, fig. 1 is a schematic top view of a quantum cascade laser according to an embodiment of the present invention, fig. 2 is a schematic view of a photonic crystal layer according to an embodiment of the present invention, and fig. 3 is a schematic bottom view of a quantum cascade laser according to an embodiment of the present invention.
As shown in fig. 1, the quantum cascade laser includes a light emitting region 10 and a filtering region 20, the light emitting region 10 is used for emitting laser light, the filtering region 20 is used for beam shaping the laser light and outputting the shaped laser light, the filtering region 20 includes a first photonic crystal and a second photonic crystal, the first photonic crystal and the second photonic crystal have the same structure, and a phase shift region is provided between the first photonic crystal and the second photonic crystal.
Optionally, the photonic crystal material is a semiconductor material, such as a II-VI system, III-V system, or the like.
Optionally, the working wavelength of the quantum cascade laser is not limited to the mid-far infrared band of the quantum cascade material, and can also cover the visible light to near infrared band according to different materials.
Optionally, the pumping mode of the photonic crystal surface-emitting quantum cascade laser structure is electric injection.
In an embodiment of the present invention, as shown in fig. 2, the laser further includes a P-side metal electrode layer 8, an insulating layer 7 and a P-cladding layer 6 disposed from bottom to top, where the P-cladding layer 6 is etched to form a photonic crystal layer, and the photonic crystal layer includes the filtering region 20.
In one embodiment of the present invention, as shown in fig. 2, the light emitting region 10 includes a P-side confinement layer 5, an active layer 4, an N-side confinement layer 3, an N-side substrate layer 2, and an N-side metal electrode layer 1 sequentially disposed on the P-side cladding layer 6.
In one embodiment of the present invention, the width of the phase shift region is 1/2 period, and the period is an arrangement period between the dielectric pillars in the first photonic crystal and the second photonic crystal.
In one embodiment of the present invention, as shown in fig. 1 to 3, the first photonic crystal and the second photonic crystal each include a plurality of dielectric pillars arranged in a predetermined lattice type manner. It can be understood that the first photonic crystal and the second photonic crystal form dielectric columns arranged according to a certain lattice type in an etching mode, and substances such as silicon nitride and the like can be filled between the dielectric columns to form a plane.
In one embodiment of the present invention, the predetermined lattice type is a regular polygon. Such as tetragonal lattice, triangular lattice, cellular lattice, etc.
The complete photonic crystal has the characteristics of surface emission by utilizing a band edge mode and has the advantages of low divergence angle and high brightness. For the case of only one array element, the mode of high quality factor usually presents a doughnut-shaped spot, which arrangement is advantageous for enhancing the power extraction at f 2-2, resulting in a single-lobed far-field spot, due to the phase shift introduced between the first photonic crystal and the second photonic crystal.
In the above embodiment, the filtering region includes the first photonic crystal and the second photonic crystal, that is, the photonic crystal layer has two photonic crystal arrays, and the first photonic crystal and the second photonic crystal have identical structures, the array units introduce structural symmetry breaks, pi phase shift is introduced into the photonic crystal, the far field divergence angle is smaller, and the far field light spot is in a single lobe rather than a doughnut shape, compared with the case of only one array unit.
As shown in fig. 3, an electrode window is opened on a portion of the photonic crystal dielectric pillar and at least at a position corresponding to the phase shift region, where the photonic crystal is the first photonic crystal and/or the second photonic crystal. The electrode window forms a net-shaped distribution with the P face downwards, so that current injection can be optimized, and current uniformity, beam quality and output power can be improved.
In an embodiment of the present invention, the width of the quantum cascade laser is a preset width, and the preset width enables the quantum cascade laser to reach a laterally continuous spectrum bound state. The coupling and the anti-cross of the lateral polarization mode are used for counteracting the single-side mode loss caused by ridge etching with a certain height-width ratio, and the polarization performance is optimized.
Referring to fig. 4, fig. 4 is a flow chart illustrating a method for fabricating a quantum cascade laser according to an embodiment of the invention.
As shown in FIG. 4, the method for fabricating the quantum cascade laser includes steps S410-S430. The quantum cascade laser manufactured by fig. 4 is shown in fig. 1 to 3.
S410, an N-face metal electrode layer, an N-face substrate layer, an N-face limiting layer, an active region, a P-face limiting layer, a P-face cladding layer, a P-face contact layer, an insulating layer and a P-face metal electrode layer are sequentially grown from bottom to top, the P-face cladding layer is etched into a photonic crystal layer, the photonic crystal layer comprises a first photonic crystal and a second photonic crystal, and a phase shift region is arranged between the first photonic crystal and the second photonic crystal.
S420, etching part of the N-side metal electrode layer, the N-side substrate layer, the N-side limiting layer, the active region and the P-side limiting layer until part of the photonic crystal layer is exposed.
In one embodiment of the present invention, the width of the phase shift region is 1/2 period, and the period is an arrangement period between the dielectric pillars in the first photonic crystal and the second photonic crystal.
In an embodiment of the present invention, the method shown in fig. 4 further includes: and opening an electrode window on a corresponding position of the phase shift region and at least one part of the photonic crystal dielectric column, wherein the photonic crystal is the first photonic crystal and/or the second photonic crystal.
In an embodiment of the present invention, the method shown in fig. 4 further includes: the width of the quantum cascade laser is configured to be a preset width, and the preset width enables the quantum cascade laser to reach a lateral continuous spectrum binding state.
The invention provides a quantum cascade laser design with a specific example.
Examples
As shown in fig. 5, the band structure of the first photonic crystal is shown, and the present embodiment adopts Γ2-2 band-edge mode. The band edge mode becomes flat near the second order gamma point, the group velocity approaches 0, and a large-area standing wave resonance can be formed in the photonic crystal region. And the mode has a circular single-lobe far-field light spot, which is an ideal mode for many laser applications requiring high beam quality.
As shown in fig. 6, an electric field mode profile of a single periodic band-edge mode Γ2-2 of the photonic crystal structure calculated using COMSOL. The horizontal and vertical coordinates represent the spatial position and the gray scale represents the relative magnitude of the electric field.
As shown in fig. 7, the distribution of the near field electric field component Ez of the photonic crystal structure calculated using COMSOL is shown. The horizontal and vertical coordinates represent the spatial position and the gray scale represents the relative magnitude of the electric field. After the phase shift is introduced, the quality factor of the band-edge mode gamma 2-2 is increased, and the lasing is easier.
Examples
As shown in fig. 8, in order to set the ridge width and introduce a lateral BIC structure, the lateral polarization mode coupling is reversely crossed to counteract the single-side mode loss caused by ridge etching with a certain aspect ratio, so as to optimize the polarization performance.
As shown in fig. 9, a graph of the lateral leakage intensity as a function of ridge width calculated using COMSOL and a z-direction electric field component distribution graph of the leakage intensity extreme point are shown. The lateral leakage intensity oscillates with increasing ridge width, reaching a minimum value close to 0 at some specific width. Lateral leakage at the extreme points is substantially reduced compared to non-extreme points.
It should be noted that, for the sake of simplicity of description, the foregoing method embodiments are all expressed as a series of combinations of actions, but it should be understood by those skilled in the art that the present invention is not limited by the order of actions described, as some steps may be performed in other order or simultaneously in accordance with the present invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are all preferred embodiments, and that the acts and modules referred to are not necessarily all required for the present invention.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to the related descriptions of other embodiments.
The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present invention, and are not meant to limit the invention thereto, but to limit the invention thereto.

Claims (8)

1. A quantum cascade laser, comprising:
a light emitting region for emitting laser light;
the filtering area is used for carrying out beam shaping on the laser and outputting the shaped laser, and comprises a first photonic crystal and a second photonic crystal, wherein the first photonic crystal and the second photonic crystal have the same structure, and a phase shift area is arranged between the first photonic crystal and the second photonic crystal;
the width of the phase shifting region is 1/2 period, and the period is the arrangement period between the dielectric columns in the first photonic crystal and the second photonic crystal.
2. The quantum cascade laser of claim 1, wherein the first photonic crystal and the second photonic crystal each comprise a plurality of dielectric posts arranged in a predetermined lattice type manner.
3. The quantum cascade laser of claim 2, wherein the predetermined lattice type is a regular polygon.
4. The quantum cascade laser of claim 1, further comprising a P-side metal electrode layer, an insulating layer, and a P-cladding layer disposed from bottom to top;
the P cladding layer is etched to form a photonic crystal layer, and the photonic crystal layer comprises the filtering region.
5. The quantum cascade laser of claim 4, wherein the light emitting region comprises a P-side confinement layer, an active layer, an N-side confinement layer, an N-side substrate layer, and an N-side metal electrode layer disposed in that order on the P-side cladding layer.
6. The quantum cascade laser of claim 1, wherein an electrode window is opened on a photonic crystal dielectric pillar at least a portion of which corresponds to the phase shift region, the photonic crystal being the first photonic crystal and/or the second photonic crystal.
7. The quantum cascade laser of claim 4, wherein a width of the quantum cascade laser is a preset width that enables the quantum cascade laser to reach a laterally continuous spectrum bound state.
8. A method of fabricating a quantum cascade laser, comprising:
sequentially growing an N-side metal electrode layer, an N-side substrate layer, an N-side limiting layer, an active region, a P-side limiting layer, a P-side cladding layer, a P-side contact layer, an insulating layer and a P-side metal electrode layer from bottom to top, wherein the P-side cladding layer is etched into a photonic crystal layer, the photonic crystal layer comprises a first photonic crystal and a second photonic crystal, and a phase shift region is arranged between the first photonic crystal and the second photonic crystal;
etching part of the N-side metal electrode layer, the N-side substrate layer, the N-side limiting layer, the active region and the P-side limiting layer until part of the photonic crystal layer is exposed; the width of the phase shifting region is 1/2 period, and the period is the arrangement period between the dielectric columns in the first photonic crystal and the second photonic crystal.
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US8284814B2 (en) * 2007-08-31 2012-10-09 Japan Science And Technology Agency Photonic crystal laser
CN101588016A (en) * 2008-05-23 2009-11-25 中国科学院半导体研究所 Photonic crystal thin plate type surface emitting annular beam laser
CN103996972A (en) * 2014-06-11 2014-08-20 中国科学院半导体研究所 Photonic crystal edge emitting laser device capable of modulating wave length and divergence angle at the same time
US10490979B2 (en) * 2017-12-27 2019-11-26 Kabushiki Kaisha Toshiba Substrate including photonic crystal and method for manufacturing the same, and surface emitting quantum cascade laser
TW202119719A (en) * 2019-11-13 2021-05-16 光環科技股份有限公司 Surface emitting laser with hybrid grating structure

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