CN101588016A - Photonic crystal thin plate type surface emitting annular beam laser - Google Patents
Photonic crystal thin plate type surface emitting annular beam laser Download PDFInfo
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- CN101588016A CN101588016A CNA2008101124684A CN200810112468A CN101588016A CN 101588016 A CN101588016 A CN 101588016A CN A2008101124684 A CNA2008101124684 A CN A2008101124684A CN 200810112468 A CN200810112468 A CN 200810112468A CN 101588016 A CN101588016 A CN 101588016A
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Abstract
The invention discloses a photonic crystal thin plate type surface emitting annular beam laser. An active area of the laser comprises a photonic crystal structure and phase shift defects; and a photonic crystal structural unit in the active area is a round hole or an elliptical hole, and a lattice structure is stretched in certain degree, and is added with a phase shift defect with proper width. By utilizing the invention, the surface emitting laser with good polarization characteristics and prospected beams can be designed; and because of imperfect asymmetry when the photonic crystal structural unit is the elliptical hole, the optical-field distribution is changed, and further output light has good polarization characteristics.
Description
Technical field
The present invention relates to the semiconductor photoelectronic device technical field, relate in particular to a kind of photonic crystal thin plate type surface emitting annular beam laser.
Background technology
Photonic crystal since its notion is suggested, has been subjected to people's attention always.Its exclusive " photon band gap " (PBG) makes it that special status be arranged in the application of laser, and it can suppress spontaneous radiation and produce the probability that frequency is in the photon in the band gap.After adding certain defective in the photonic crystal, the very narrow defect state of frequency range might appear in the band gap, spontaneous radiation produces the probability that frequency is in the photon of defect state and is not suppressed like this, and near the also probability of oriented this frequency translation of spontaneous radiation this frequency, this spontaneous radiation that is equivalent to defect state has been enhanced.By design to photonic crystal, the sharp radio frequency rate of laser can be set in the defect state frequency, can improve the spontaneous radiation factor of laser so greatly.
Along with the variation of the deep and application demand of studying, photon crystal laser is launched from the limit, develops into surface launching.There is several different methods can realize surface launching, as the edge-emitting laser array, VCSEL, band edge surface launching photon crystal laser etc.Wherein band edge surface launching photon crystal laser is to utilize the slow light effect of photon at the symmetric points band edge, produces standing wave in whole photonic crystal region, has satisfied the Bragg diffraction conditions simultaneously, also can launch diffraction light perpendicular to the photonic crystal in-plane.Under the restriction of Bragg condition, the character of this vertical direction diffraction light is identical everywhere in the standing wave zone of photonic crystal.So just can obtain the large tracts of land surface-emission laser.
In actual applications, the light of high polarization often has bigger range of application than the light of no polarization characteristic.The surface-emission laser that is obtained by band edge surface launching photon crystal laser generally is not single polarization, expect polarised light, and the simplest method adds polarizer exactly, and the utilance to light source is lower like this.Reasonable method is the symmetry that changes photonic crystal elements, makes the near field of light of generation itself just have high polarization characteristic.Lattice stretches also can change the symmetry of photonic crystal.
In recent years, the control of laser beam type also is subjected to people's attention, according to document: " E.Miyai; K.Sakai; T.Okano, W.Kunishi, D.Ohnishi and S.Noda; " Lasersproducing tailored beams; " Nature, vol.441, pp.946,2006. " wherein to adding the phase shift defective in the two-dimensional photon crystal structure, bundle type in far field is affected as a result.
Can determine thus,, can make the polarization characteristic of output beam and bundle type reach desired value the photon crystal structure of laser active area and the suitable design of phase shift defective.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of photonic crystal thin plate type surface emitting annular beam laser structure, to design the surface-emitting laser with good polarization characteristic and expection bundle type.
(2) technical scheme
For achieving the above object, the invention provides a kind of photonic crystal thin plate type surface emitting annular beam laser, this laser active area comprises photon crystal structure and phase shift defective, and the photon crystal structure unit in the active area is circular hole or elliptical aperture, lattice structure is stretched to a certain extent, and adds the phase shift defective of proper width.
In the such scheme, described photon crystal structure is two-dimentional tetragonal lattice structure.
In the such scheme, this laser is a band edge surface launching stretching photonic crystal phase shifted laser, adopts symmetric points band edge frequency, utilizes slow light effect to make light satisfy Prague Bragg diffraction conditions, thereby obtains surface-emission laser.
In the such scheme, described photon crystal structure unit is circular hole or elliptical aperture.
In the such scheme, it is to carry out lattice along a certain direction of lattice to stretch that described lattice stretches, and lattice symmetry is changed in this direction.
In the such scheme, the phase shift defective of described proper width is in the defective of inserting a certain width along transverse or short-axis direction, i.e. non-porous structure, and making between the field distribution in the photonic crystal on defective both sides has certain phase difference.
In the such scheme, the material of described laser active area is the GaAs/AlGaAs material, or is the InP/InGaAsP material.
In the such scheme, the output wavelength of this laser active area is at infrared band, wave-length coverage at 0.7 micron to 1.7 micrometer ranges.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, photonic crystal thin plate type surface emitting annular beam laser provided by the invention, the non-ideal symmetrical when being elliptical aperture owing to the photon crystal structure unit changes optical field distribution, thereby makes output light that good polarization characteristic be arranged.
2, photonic crystal thin plate type surface emitting annular beam laser provided by the invention, because lattice is stretched in certain direction, promptly under the constant situation of cell orifice structure, in the distance that is stretched between the direction increase Kong Yukong, lattice symmetry is changed, thereby reach the purpose of modulating mode light field.
3, photonic crystal thin plate type surface emitting annular beam laser provided by the invention owing to add the phase shift defective, makes between the optical field distribution of defective areas at both sides to have phase difference, thereby the output beam type is regulated and control.
Description of drawings
Fig. 1 is the structural representation of photonic crystal thin plate type surface emitting annular beam laser provided by the invention, comprises vertical view, end view, non-special visual angle view.
Fig. 2 is the design philosophy schematic diagram of photonic crystal thin plate type surface emitting annular beam laser provided by the invention, comprises three kinds of designs and resultant effect scheme.
When Fig. 3 is circular hole (left side) and elliptical aperture (right side) for the photon crystal structure unit of active area among the present invention, the contrast of active area internal electric field intensity distributions (a) and direction of an electric field distribution (b).
Fig. 4 is for no phase shift defective (left side) in the photon crystal structure of active area among the present invention with when phase shift defective (right side) is arranged, and active area is the contrast of 0.6 times of wavelength place plane electric field strength distribution outward.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structural representation of photonic crystal thin plate type surface emitting annular beam laser provided by the invention, comprises vertical view, end view, non-special visual angle view.This active area comprises photon crystal structure and phase shift defective; Wherein, the photon crystal structure unit in the described active area is circular hole or elliptical aperture, and lattice structure is stretched to a certain extent, and adds the phase shift defective of proper width.
In the active area materials layer, etch as shown in Figure 2, the cycle is that A, duty ratio are that r/A, the degree of depth are the circular hole that has the phase shift defective or the elliptical aperture tetragonal lattice structure of active layer thickness.Wherein oval ratio (minor axis is than major axis) is 0.7, and the width of phase shift defective is 0.5A.
Above-mentioned photon crystal structure is two-dimentional tetragonal lattice structure.
Above-mentioned laser is a band edge surface launching stretching photonic crystal phase shifted laser, adopt symmetric points band edge frequency, utilize slow light effect to make light satisfy Prague (Bragg) diffraction conditions, thereby obtain surface-emission laser and adopt symmetric points band edge frequency, utilize slow light effect to make light satisfy the Bragg diffraction conditions, thereby obtain surface-emission laser.
The material of above-mentioned laser active area is the GaAs/AlGaAs material, or is the InP/InGaAsP material.
The output wavelength of above-mentioned laser active area is at infrared band, wave-length coverage at 0.7 micron to 1.7 micrometer ranges.
As shown in Figure 2, Fig. 2 is the design philosophy schematic diagram of photonic crystal thin plate type surface emitting annular beam laser provided by the invention, comprises elliptical aperture scheme, lattice stretching scheme, phase shift defective scheme and resultant effect scheme.By adopting the method for one or more scheme combinations, change the symmetry of photon crystal structure, its photon band is controlled, improve the polarizability of light beam, separate the dipole modes of degeneracy, change far-field pattern.
As shown in Figure 3, when being circular hole (left side) and elliptical aperture (right side) for the photon crystal structure unit of active area among the present invention, the distribute contrast of (b) of active area internal electric field intensity distributions (a) and direction of an electric field.This result is calculated by plane wave expansion method.When the photon crystal structure unit was circular hole, electric field strength became spot distribution, and direction of an electric field mostly is annular spread, and polarizability is relatively poor.When the photon crystal structure unit was elliptical aperture, electric field strength distributed into strips, and direction of an electric field is near single direction, and polarizability is fine.
As shown in Figure 4, no phase shift defective (left side) and when cross phase shift defective (right side) is arranged in the photon crystal structure for active area among the present invention, the outer 0.6 times of contrast that wavelength place plane electric field strength distributes of active area.This result by the Finite Difference-Time Domain separating method calculate to.The electric-field intensity distribution of selecting plane, 0.6 times of wavelength place is in order to remove the influence of evanescent field.When no phase shift defective, electric-field intensity distribution is a hot spot.When cross phase shift defective was arranged, electric-field intensity distribution was an annulus.Utilize this near-field pattern to calculate corresponding far-field pattern, compare with experimental result again, can make further modification design.
Above-described result of calculation; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is that the present invention is to concrete CALCULATION OF PARAMETERS result; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1, a kind of photonic crystal thin plate type surface emitting annular beam laser, it is characterized in that, this laser active area comprises photon crystal structure and phase shift defective, and the photon crystal structure unit in the active area is circular hole or elliptical aperture, lattice structure is stretched to a certain extent, and adds the phase shift defective of proper width.
2, photonic crystal thin plate type surface emitting annular beam laser according to claim 1 is characterized in that, described photon crystal structure is two-dimentional tetragonal lattice structure.
3, photonic crystal thin plate type surface emitting annular beam laser according to claim 1, it is characterized in that, this laser is a band edge surface launching stretching photonic crystal phase shifted laser, adopt symmetric points band edge frequency, utilize slow light effect to make light satisfy Prague Bragg diffraction conditions, thereby obtain surface-emission laser.
4, photonic crystal thin plate type surface emitting annular beam laser according to claim 1 is characterized in that, described photon crystal structure unit is circular hole or elliptical aperture.
5, photonic crystal thin plate type surface emitting annular beam laser according to claim 1 is characterized in that, it is to carry out lattice along a certain direction of lattice to stretch that described lattice stretches, and lattice symmetry is changed in this direction.
6, photonic crystal thin plate type surface emitting annular beam laser according to claim 1, it is characterized in that, the phase shift defective of described proper width is in the defective along a transverse or a certain width of short-axis direction insertion, be non-porous structure, making between the field distribution in the photonic crystal on defective both sides has certain phase difference.
7, photonic crystal thin plate type surface emitting annular beam laser according to claim 1 is characterized in that, the material of described laser active area is the GaAs/AlGaAs material, or is the InP/InGaAsP material.
8, photonic crystal thin plate type surface emitting annular beam laser according to claim 1 is characterized in that, the output wavelength of this laser active area is at infrared band, wave-length coverage at 0.7 micron to 1.7 micrometer ranges.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2008101124684A CN101588016A (en) | 2008-05-23 | 2008-05-23 | Photonic crystal thin plate type surface emitting annular beam laser |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950925A (en) * | 2010-09-08 | 2011-01-19 | 中国科学院半导体研究所 | Photonic crystal slow light effect-based optical amplifier with polarization-independent characteristic |
| CN106450766A (en) * | 2016-12-08 | 2017-02-22 | 中国科学院光电技术研究所 | Multifunctional flexible dynamic polarization modulation device |
| CN116131101A (en) * | 2023-04-04 | 2023-05-16 | 中国科学院半导体研究所 | Quantum cascade laser and manufacturing method thereof |
| WO2024114803A1 (en) * | 2022-12-02 | 2024-06-06 | 微源光子(深圳)科技有限公司 | Photonic crystal laser and preparation method therefor |
-
2008
- 2008-05-23 CN CNA2008101124684A patent/CN101588016A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950925A (en) * | 2010-09-08 | 2011-01-19 | 中国科学院半导体研究所 | Photonic crystal slow light effect-based optical amplifier with polarization-independent characteristic |
| CN101950925B (en) * | 2010-09-08 | 2012-04-25 | 中国科学院半导体研究所 | Photonic crystal slow light effect-based optical amplifier with polarization-independent characteristic |
| CN106450766A (en) * | 2016-12-08 | 2017-02-22 | 中国科学院光电技术研究所 | Multifunctional flexible dynamic polarization modulation device |
| CN106450766B (en) * | 2016-12-08 | 2019-08-02 | 中国科学院光电技术研究所 | Multifunctional flexible dynamic polarization modulation device |
| WO2024114803A1 (en) * | 2022-12-02 | 2024-06-06 | 微源光子(深圳)科技有限公司 | Photonic crystal laser and preparation method therefor |
| CN116131101A (en) * | 2023-04-04 | 2023-05-16 | 中国科学院半导体研究所 | Quantum cascade laser and manufacturing method thereof |
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Application publication date: 20091125 |