CN116117139A - Aluminum scandium alloy target material and preparation method and application thereof - Google Patents
Aluminum scandium alloy target material and preparation method and application thereof Download PDFInfo
- Publication number
- CN116117139A CN116117139A CN202310169272.3A CN202310169272A CN116117139A CN 116117139 A CN116117139 A CN 116117139A CN 202310169272 A CN202310169272 A CN 202310169272A CN 116117139 A CN116117139 A CN 116117139A
- Authority
- CN
- China
- Prior art keywords
- aluminum
- scandium alloy
- alloy target
- scandium
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000542 Sc alloy Inorganic materials 0.000 title claims abstract description 102
- LUKDNTKUBVKBMZ-UHFFFAOYSA-N aluminum scandium Chemical compound [Al].[Sc] LUKDNTKUBVKBMZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000013077 target material Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 24
- 238000009718 spray deposition Methods 0.000 claims abstract description 21
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 17
- 238000003754 machining Methods 0.000 claims abstract description 14
- 238000000280 densification Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims description 22
- 239000000155 melt Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000003723 Smelting Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 11
- 238000001540 jet deposition Methods 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 239000000498 cooling water Substances 0.000 claims description 10
- 238000000462 isostatic pressing Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 229910000695 Aluminium-scandium alloy Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005266 casting Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 5
- 238000004663 powder metallurgy Methods 0.000 abstract description 3
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 230000009286 beneficial effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 229910000553 6063 aluminium alloy Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001513 hot isostatic pressing Methods 0.000 description 3
- 238000005339 levitation Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007712 rapid solidification Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an aluminum scandium alloy target, a preparation method and application thereof, and relates to the technical field of aluminum alloy target processing, comprising the following steps: and (3) performing spray deposition on the aluminum-scandium alloy ingot to obtain an aluminum-scandium alloy target blank, and performing densification treatment and machining to obtain the aluminum-scandium alloy target. The invention solves the problems of the prior art that Al is used for producing the aluminum-scandium alloy target material with high scandium content in a casting mode 3 The Sc particles are large, unevenly distributed, have more cracks and hole defects, and simultaneouslyThe problems of complex process, high oxygen content and high price in the production of the powder metallurgy method are avoided, and the Al of the aluminum scandium alloy target material is achieved 3 The Sc particles are fine, the oxygen content is low, the components are uniform, and the technical effect of no cracks is achieved.
Description
Technical Field
The invention relates to the technical field of aluminum alloy target processing, in particular to an aluminum scandium alloy target and a preparation method and application thereof.
Background
The aluminum scandium alloy target (AlSc) is used in the 3C industry and can be used as a film material of a chip, so that the piezoelectric performance of an electronic element, such as a micro-electromechanical element (MEMS) and the like, can be remarkably improved.
The aluminum scandium alloy target with scandium content of 8-45 at% Sc (atomic ratio) has application, the piezoelectric property of the aluminum scandium alloy target is increased along with the increase of scandium content, and the manufacturing difficulty is increased. The common manufacturing method of the aluminum scandium alloy target material comprises smelting, casting and machining, and the process is simple, however, when the scandium content is more than 15at percent Sc, the casting manufacturing mode generally causes phenomena of cracks, holes, uneven components and the like of cast ingots, so that the high-quality target material cannot be produced, and the common improvement modes comprise powder metallurgy, compression molding and sintering, but the problems of long process and high cost exist, and meanwhile, the problem of high oxygen content can be caused by long-time contact of powder with air in the preparation and compression molding processes.
In view of this, the present invention has been made.
Disclosure of Invention
The invention aims to provide a preparation method of an aluminum scandium alloy target material, which has simple process and easy operation, and can prepare and obtain Al 3 Sc particles are tiny, oxygen content is low, components are uniform, and the aluminum scandium alloy target material has no cracks.
Another object of the present invention is to provide an aluminum scandium alloy target material having Al 3 Sc has the advantages of fine particles, low oxygen content, uniform composition and no cracks.
The invention further aims to provide application of the aluminum scandium alloy target, which is favorable for improving the performance of the micro-electromechanical element and has outstanding application effect.
In order to achieve the above object of the present invention, the following technical solutions are specifically adopted:
in a first aspect, a method for preparing an aluminum scandium alloy target material includes the following steps:
and (3) performing spray deposition on the aluminum-scandium alloy ingot to obtain an aluminum-scandium alloy target blank, and performing densification treatment and machining to obtain the aluminum-scandium alloy target.
Further, the spray deposition method comprises the following steps:
melting an aluminum scandium alloy ingot in a jet deposition furnace to obtain a melt, then injecting the melt into a leakage ladle, then jet depositing the melt on a collecting disc, and cooling the melt to obtain the aluminum scandium alloy target blank;
preferably, the vacuum degree of the jet deposition furnace is 3×10 -2 ～3×10 -3 Between MPa;
preferably, the temperature of the melt is 1000-1500 ℃;
preferably, the temperature of the leakage package is 800-1000 ℃.
Further, the diameter of the jet deposited flow guide pipe is 2-5 mm;
preferably, the atomizing gas for spray deposition comprises Ar and N 2 At least one of (a) and (b);
preferably, the pressure of the atomizing gas is 0.5-2 MPa;
preferably, the deposition distance of the spray deposition is 100-400 mm.
Further, the rotation speed of the collecting disc is 50-100 rpm;
preferably, the descent speed of the collecting tray is 10-500 mm/min;
preferably, the collecting tray comprises a collecting tray with a cooling function;
preferably, the cooling mode comprises cooling by using cooling water;
preferably, the water pressure of the cooling water is 1-2 MPa.
Further, the preparation method of the aluminum scandium alloy ingot comprises the following steps:
mixing and smelting metal aluminum and metal scandium to obtain an aluminum scandium alloy ingot;
preferably, the smelting comprises vacuum smelting;
preferably, the vacuum degree of smelting is 3×10 -2 ～3×10 -3 Between MPa;
preferably, the smelting temperature is 1000-1500 ℃ and the smelting time is 0.5-1 h.
Further, the densification process comprises an isostatic pressing process;
preferably, the temperature of the isostatic pressing treatment is 500-700 ℃;
preferably, the pressure of the isostatic pressing treatment is 100-300 MPa, and the time of the isostatic pressing treatment is 3-5 h.
Further, the machining includes wire cutting;
preferably, the machining further comprises the steps of flaw detection and welding.
In a second aspect, an aluminum scandium alloy target material prepared by any one of the preparation methods described above.
Furthermore, scandium content of the aluminum scandium alloy target material is more than 15 at%;
preferably, the oxygen content of the aluminum scandium alloy target material is 100-600 ppm;
preferably, al in the aluminum scandium alloy target material 3 The Sc particles have a size of 25 to 80. Mu.m.
In a third aspect, the use of an aluminum scandium alloy target according to any of the preceding claims in the preparation of a microelectromechanical component.
Compared with the prior art, the invention has at least the following beneficial effects:
the preparation method of the aluminum scandium alloy target material provided by the invention adopts the spray deposition technology, can be quickly solidified and welded layer by layer after the aluminum scandium alloy is deposited, is particularly suitable for the production of the aluminum scandium target material of high scandium alloy (20-45 at%Sc), and the obtained alloy target material has Al 3 The characteristics of fine Sc particles, low oxygen content, uniform components, no cracks and the like, and solves the problems of Al in the prior art when producing the aluminum-scandium alloy target material with high scandium content 3 The Sc particles are large, the distribution is uneven, the defects of cracks and holes are many, the process is complex, the oxygen content is high, and the cost is high; the preparation method provided by the invention has the advantages of simple process and easiness in operation, and is suitable for industrial production.
The aluminum scandium alloy target provided by the invention has Al 3 Sc has the advantages of fine particles, low oxygen content, uniform composition and no cracks.
The application of the aluminum scandium alloy target material provided by the invention is beneficial to improving the performance of the micro-electromechanical element and has outstanding application effect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of the preparation of the aluminum scandium alloy target material according to embodiment 1 of the present invention;
fig. 2 is a schematic diagram of spray deposition of an aluminum scandium alloy target according to embodiment 1 of the present invention.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
According to a first aspect of the invention, there is provided a method for preparing an aluminium scandium alloy target, comprising the steps of:
and (3) performing spray deposition on the aluminum-scandium alloy ingot to obtain an aluminum-scandium alloy target blank, and performing densification treatment and machining to obtain the aluminum-scandium alloy target.
The preparation method of the aluminum scandium alloy target material provided by the invention adopts the spray deposition technology, can be quickly solidified and welded layer by layer after the aluminum scandium alloy is deposited, is particularly suitable for the production of the aluminum scandium target material of high scandium alloy (20-45 at%Sc), and the obtained alloy target material has Al 3 The characteristics of fine Sc particles, low oxygen content, uniform components, no cracks and the like, and solves the problems of Al in the prior art when producing the aluminum-scandium alloy target material with high scandium content 3 The Sc particles are large, the distribution is uneven, the defects of cracks and holes are many, the process is complex, the oxygen content is high, and the cost is high; the preparation method provided by the invention has the advantages of simple process and easiness in operation, and is suitable for industrial production.
In a preferred embodiment, the method of spray deposition of the present invention comprises the steps of:
and melting the aluminum scandium alloy ingot in a jet deposition furnace to obtain a melt, injecting the melt into a leakage ladle, then jet depositing the melt on a collecting tray, and cooling to obtain an aluminum scandium alloy target blank.
In a preferred embodiment, the temperature of the melt may be 1000 to 1500 ℃, typical but non-limiting temperatures being, for example, 1000 ℃, 1100 ℃, 1200 ℃, 1300 ℃, 1400 ℃, 1500 ℃; the temperature of the drain bag may be 800-1000 ℃, with typical but non-limiting temperatures being, for example, 800 ℃, 820 ℃, 840 ℃, 860 ℃, 880 ℃, 900 ℃, 920 ℃, 940 ℃, 960 ℃, 980 ℃, 1000 ℃.
The preferable melt temperature and the ladle temperature in the invention are more beneficial to ensuring the fluidity of the melt and simultaneously ensuring that the melt cannot generate Al 3 The Sc precipitation problem is more beneficial to improving the preparation effect of the aluminum scandium alloy target.
In a preferred embodiment, the diameter of the jet deposited flow guide pipe may be 2 to 5mm, for example, 2mm, 3mm, 4mm, 5mm, but not limited thereto, which is more advantageous in improving the conveying effect of the raw material.
In a preferred embodiment, the vacuum level of the spray deposition furnace may be 3X 10 -2 ～3×10 -3 And the influence of oxygen is more favorably removed between MPa, so that the aluminum scandium alloy target material with low oxygen content is obtained.
In the invention, the spray deposition process is carried out under high vacuum and protective atmosphere, so that the oxygen content of the aluminum-scandium alloy target material can be ensured to be lower than 100-600 ppm, and the high efficiency is realized, which is incomparable with powder mode molding.
In the invention, the spray deposition process can be regarded as layer-by-layer solidification, and has the advantages of uniform heat distribution and metal shrinkage, so that the product has no cracks, and the preparation of the alloy with high scandium content in a casting mode is obviously not achieved.
In a preferred embodiment, the atomizing gas (protective atmosphere) of the spray deposition includes, but is not limited to, ar and N 2 The atomizing gas is to ensure high purity and low oxygen content, so that oxidation of the molten metal can be avoided.
In a preferred embodiment, the pressure of the atomizing gas may be from 0.5 to 2MPa, with typical but non-limiting pressures being, for example, 0.5MPa, 1MPa, 1.5MPa, 2MPa.
The pressure of the atomization gas is between 0.5 and 2MPa, which is one of the key factors for controlling the synchronous deposition speed and cooling speed, when the pressure of the atomization gas is too high, molten metal is not solidified, when the pressure of the atomization gas is too low, faults and holes can appear on the metal, and the efficiency is low; the atomized gas pressure of the invention can ensure the rapid solidification of metal and Al only between 0.5 and 2MPa 3 Sc particles do not grow long and are uniformly distributed.
In a preferred embodiment, the deposition distance of the spray deposition may be 100 to 400mm, with typical but non-limiting distances being, for example, 100mm, 150mm, 200mm, 250mm, 300mm, 350mm, 400mm.
In a preferred embodiment, the collection disc may be rotated at a speed of 50 to 100 revolutions per minute, typical but non-limiting, such as 50 revolutions per minute, 60 revolutions per minute, 70 revolutions per minute, 80 revolutions per minute, 90 revolutions per minute, 100 revolutions per minute.
The preferable deposition distance and the rotation speed of the collecting disc can ensure that the metal is uniformly deposited on the collecting disc, and the preparation effect of the aluminum scandium alloy target material is improved.
In a preferred embodiment, the descent speed of the collection tray may be between 10 and 500 mm/min, typical but non-limiting descent speeds being for example 10 mm/min, 50 mm/min, 100 mm/min, 150 mm/min, 200 mm/min, 250 mm/min, 300 mm/min, 350 mm/min, 400 mm/min, 450 mm/min, 500 mm/min.
In a preferred embodiment, the collecting tray comprises a collecting tray with a cooling function, wherein the cooling mode comprises, but is not limited to, cooling by using cooling water, which is beneficial to rapid cooling of spray deposition and beneficial to improving the preparation effect of the aluminum scandium alloy target blank.
In a preferred embodiment, the water pressure of the cooling water may be 1-2 MPa, typical but non-limiting water pressures being, for example, 1MPa, 1.2MPa, 1.3MPa, 1.4MPa, 1.5MPa, 1.6MPa, 1.7MPa, 1.8MPa, 1.9MPa, 2MPa.
The technological parameters including the descending speed of the collecting disc, the water pressure of the cooling water and the like are all means for adjusting the metal deposition speed in a matched mode, and the technological parameters can be matched in a matched mode, so that a high-quality alloy target blank is obtained after the deposition is finished, and the quality of an aluminum scandium alloy target is improved.
In a preferred embodiment, the method of preparing an aluminum scandium alloy ingot comprises the steps of:
and (3) mixing and smelting metal aluminum and metal scandium to obtain an aluminum scandium alloy ingot.
In a preferred embodiment, the smelting temperature may be in the range of 1000 to 1500 ℃, typical but non-limiting temperatures being, for example, 1000 ℃, 1100 ℃, 1200 ℃, 1300 ℃, 1400 ℃, 1500 ℃.
The invention can adopt a suspension furnace for smelting, and can avoid crucible pollution caused by high-temperature long-time alloying.
In the present invention, since rare earth scandium has a high activity and is easily oxidized, the melting method is preferably vacuum melting, and the oxygen content of the aluminum scandium alloy ingot can be reduced.
In a preferred embodiment, the vacuum level of the smelting may be 3X 10 -2 ～3×10 -3 The high vacuum degree between MPa can effectively reduce the oxygen content of the aluminum scandium alloy ingot, otherwise, the oxygen content is too high, and the aluminum scandium alloy ingot cannot be removed in the subsequent process.
In a preferred embodiment, the smelting may be from 0.5 to 1h, with typical but non-limiting times being, for example, 0.5h, 0.6h, 0.7h, 0.8h, 0.9h, 1h.
In the invention, the components after smelting and alloying are uniform, and the alloy is cast into a water-cooled copper mold to be rapidly cooled, which is beneficial to ensuring Al in the alloy 3 Fine and uniform distribution of Sc precipitation particles is achieved, and high-quality alloy ingots are obtained.
In a preferred embodiment, densification processes, including but not limited to isostatic pressing, inevitably involve fine defects in the alloy target blank obtained by spray deposition of the present invention, and thus requires isostatic pressing to achieve densification to ensure high quality of the alloy target.
In a preferred embodiment, the isostatic pressure treatment may be at a temperature of 500-700 ℃, typical but non-limiting temperatures being, for example, 500 ℃, 550 ℃, 600 ℃, 650 ℃, 700 ℃; the isostatic pressure treatment may be at a pressure of 100 to 300MPa, typical but non-limiting pressures being for example 100MPa, 150MPa, 200MPa, 250MPa, 300MPa; the isostatic treatment time may be 3 to 5 hours, typical but non-limiting times being for example 3 hours, 3.5 hours, 4 hours, 4.5 hours, 5 hours.
The technological parameters of isostatic pressing treatment are more beneficial to improving the densification treatment effect of alloy target blanks so as to ensure the high quality of alloy targets.
In a preferred embodiment, the invention further comprises the following steps after densification:
performing wire cutting machining, machining and flaw detection on the densified alloy target blank according to preset required size and finish, so as to obtain a machined target;
the processed target is welded on a backboard of a base material through vacuum diffusion welding, so that an aluminum scandium alloy target material is obtained.
In a preferred embodiment, the substrate includes, but is not limited to, 6063 aluminum.
According to a second aspect of the invention, an aluminum scandium alloy target material prepared by any one of the preparation methods is provided.
In a preferred embodiment, the scandium content of the aluminum scandium alloy target according to the present invention is 15at% or more, preferably 20 to 45at% sc.
In a preferred embodiment, the oxygen content of the aluminum scandium alloy target according to the present invention is 100 to 600ppm.
In a preferred embodiment, al in the aluminum scandium alloy target according to the present invention 3 The Sc particles have a size of 25 to ultra-high80μm。
From the above, the aluminum scandium alloy target provided by the invention has Al 3 Sc has the advantages of fine particles, low oxygen content, uniform composition and no cracks.
According to a third aspect of the present invention, there is provided the use of an aluminium scandium alloy target according to any of the preceding claims in the preparation of a microelectromechanical component.
The application of the aluminum scandium alloy target material provided by the invention is beneficial to improving the performance of the micro-electromechanical element and has outstanding application effect.
The invention is further illustrated by the following examples. The materials in the examples were prepared according to the existing methods or were directly commercially available unless otherwise specified.
Example 1
The preparation method of the aluminum scandium alloy target material, shown in fig. 1, comprises the following steps:
s1: the composition requirements are as follows: aluminum scandium alloy target
20at％Sc；
Preparing high-purity metal aluminum and scandium according to the component requirement, placing into a vacuum magnetic levitation melting furnace, vacuumizing, heating and melting, and vacuum degree is 5×10 -2 Preserving heat for 0.5h at 1300 ℃ under the pressure of MPa, and then casting into a water-cooling copper mold to obtain an aluminum scandium alloy ingot;
s2: jet deposition, see fig. 2: the aluminum scandium alloy ingot is put into a vacuum jet deposition furnace body, vacuumized, heated and melted, and the vacuum degree is 3 multiplied by 10 -2 The melt metal temperature is 1300 ℃ under MPa, the melt metal is injected into a leakage ladle, the leakage ladle is heated to 800 ℃ under the condition of the temperature, and the diameter of a honeycomb duct is equal to
Atomizing with Ar (pressure 0.5 MPa), depositing on a collector with cooling (v 1 rotation speed 50 r/min, v2 falling speed 10 mm/min, cooling with cooling water, water pressure 1.5 MPa) for 150mm, to obtain aluminum scandium alloy target blank (wherein, al 3 Sc particle size 45 μm, oxygen content 450 ppm);
s3: placing the aluminum scandium alloy target blank into a hot isostatic pressing furnace, and carrying out densification treatment for 5 hours at 700 ℃ and 200MPa to obtain a densified target blank;
s4: the densified target blank is subjected to linear cutting, machining and flaw detection according to the preset size requirement and the finish, and a machined target is obtained;
s5: and the processed target is welded on a backboard of 6063 aluminum material serving as a base material through vacuum diffusion welding, so that an aluminum scandium alloy target material is obtained.
Example 2
The preparation method of the aluminum scandium alloy target material comprises the following steps:
s1: the composition requirements are as follows: aluminum scandium alloy target
30at％Sc；
Preparing high-purity metal aluminum and scandium according to the component requirement, placing into a vacuum magnetic levitation melting furnace, vacuumizing, heating and melting, and vacuum degree is 3×10 -3 Preserving heat for 1h at 1500 ℃ under the pressure of MPa, and then casting into a water-cooling copper mold to obtain an aluminum scandium alloy ingot;
s2: jet deposition: the aluminum scandium alloy ingot is put into a vacuum jet deposition furnace body, vacuumized, heated and melted, and the vacuum degree is 3 multiplied by 10 -3 The melt metal temperature is 1500 ℃ under MPa, the melt metal is injected into a leakage ladle, the leakage ladle is heated to 1000 ℃ and the diameter of a honeycomb duct is equal to
Ar is adopted for atomization (the pressure is 1.2 MPa), the deposition distance is 200mm, the aluminum scandium alloy target blank is obtained after deposition on a collector with cooling (the rotation speed of v1 is 75 r/min, the descending speed of v2 is 50 mm/min, the cooling water cooling is carried out, the water pressure is 2 MPa), wherein Al is contained in the aluminum scandium alloy target blank 3 Sc particle size 65 μm, oxygen content 550 ppm);
s3: placing the aluminum scandium alloy target blank into a hot isostatic pressing furnace, and carrying out densification treatment for 3 hours at 660 ℃ and 100MPa to obtain a densified target blank;
s4: the densified target blank is subjected to linear cutting, machining and flaw detection according to the preset size requirement and the finish, and a machined target is obtained;
s5: and the processed target is welded on a backboard of 6063 aluminum material serving as a base material through vacuum diffusion welding, so that an aluminum scandium alloy target material is obtained.
Example 3
The preparation method of the aluminum scandium alloy target material comprises the following steps:
s1: the composition requirements are as follows: aluminum scandium alloy target
15at％Sc；
Preparing high-purity metal aluminum and scandium according to the component requirement, placing into a vacuum magnetic levitation melting furnace, vacuumizing, heating and melting, and vacuum degree is 3×10 -3 Preserving heat for 1.5h at the temperature of 1200 ℃ under the pressure of MPa, and then casting into a water-cooling copper mold to obtain an aluminum scandium alloy ingot;
s2: jet deposition: the aluminum scandium alloy ingot is put into a vacuum jet deposition furnace body, vacuumized, heated and melted, and the vacuum degree is 3 multiplied by 10 -2 The melt metal temperature is 1200 ℃ under MPa, the melt metal is injected into a leakage ladle, the leakage ladle is heated to 900 ℃ under the condition of the temperature of the leakage ladle, and the diameter of a honeycomb duct is equal to
Atomizing with Ar (pressure 1.5 MPa), depositing on a collector with cooling (v 1 rotation speed 60 r/min, v2 descending speed 15 mm/min, cooling water, water pressure 1.2 MPa) for 350mm, and obtaining aluminum scandium alloy target blank (wherein Al 3 Sc particle size 25 μm, oxygen content 150 ppm);
s3: placing the aluminum scandium alloy target blank into a hot isostatic pressing furnace, and carrying out densification treatment for 4 hours at 660 ℃ and 150MPa to obtain a densified target blank;
s4: the densified target blank is subjected to linear cutting, machining and flaw detection according to the preset size requirement and the finish, and a machined target is obtained;
s5: and the processed target is welded on a backboard of 6063 aluminum material serving as a base material through vacuum diffusion welding, so that an aluminum scandium alloy target material is obtained.
The preparation method solves the technical problems of large Al3Sc particles, uneven distribution, and many cracks and hole defects in the prior art when the aluminum scandium alloy target with high scandium content is produced in a casting mode, simultaneously avoids the problems of complex process, high oxygen content and high price in the production of a powder metallurgy method, and achieves the technical effects of small Al3Sc particles, low oxygen content, uniform components and no cracks of the aluminum scandium alloy target.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. The preparation method of the aluminum scandium alloy target is characterized by comprising the following steps of:
and (3) performing spray deposition on the aluminum-scandium alloy ingot to obtain an aluminum-scandium alloy target blank, and performing densification treatment and machining to obtain the aluminum-scandium alloy target.
2. The method of manufacturing according to claim 1, wherein the method of spray deposition comprises the steps of:
melting an aluminum scandium alloy ingot in a jet deposition furnace to obtain a melt, then injecting the melt into a leakage ladle, then jet depositing the melt on a collecting disc, and cooling the melt to obtain the aluminum scandium alloy target blank;
preferably, the vacuum degree of the jet deposition furnace is 3×10 -2 ～3×10 -3 Between MPa;
preferably, the temperature of the melt is 1000-1500 ℃;
preferably, the temperature of the leakage package is 800-1000 ℃.
3. The method according to claim 2, wherein the diameter of the jet deposited draft tube is 2-5 mm;
preferably, the atomizing gas for spray deposition comprises Ar and N 2 At least one of (a) and (b);
preferably, the pressure of the atomizing gas is 0.5-2 MPa;
preferably, the deposition distance of the spray deposition is 100-400 mm.
4. The preparation method according to claim 2, wherein the rotation speed of the collecting tray is 50 to 100 rotations per minute;
preferably, the descent speed of the collecting tray is 10-500 mm/min;
preferably, the collecting tray comprises a collecting tray with a cooling function;
preferably, the cooling mode comprises cooling by using cooling water;
preferably, the water pressure of the cooling water is 1-2 MPa.
5. The method of producing according to claim 1, characterized in that the method of producing aluminum scandium alloy ingot comprises the steps of:
mixing and smelting metal aluminum and metal scandium to obtain an aluminum scandium alloy ingot;
preferably, the smelting comprises vacuum smelting;
preferably, the vacuum degree of smelting is 3×10 -2 ～3×10 -3 Between MPa;
preferably, the smelting temperature is 1000-1500 ℃ and the smelting time is 0.5-1 h.
6. The production method according to any one of claims 1 to 5, wherein the densification treatment comprises an isostatic press treatment;
preferably, the temperature of the isostatic pressing treatment is 500-700 ℃;
preferably, the pressure of the isostatic pressing treatment is 100-300 MPa, and the time of the isostatic pressing treatment is 3-5 h.
7. The method of any one of claims 1-5, wherein the machining comprises wire cutting;
preferably, the machining further comprises the steps of flaw detection and welding.
8. An aluminum scandium alloy target material prepared by the preparation method according to any one of claims 1 to 7.
9. The aluminum-scandium alloy target according to claim 8, wherein the scandium content of the aluminum-scandium alloy target is 15at% or more;
preferably, the oxygen content of the aluminum scandium alloy target material is 100-600 ppm;
preferably, al in the aluminum scandium alloy target material 3 The Sc particles have a size of 25 to 80. Mu.m.
10. Use of an aluminium scandium alloy target according to claim 8 or 9 in the preparation of a microelectromechanical component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310169272.3A CN116117139A (en) | 2023-02-27 | 2023-02-27 | Aluminum scandium alloy target material and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310169272.3A CN116117139A (en) | 2023-02-27 | 2023-02-27 | Aluminum scandium alloy target material and preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116117139A true CN116117139A (en) | 2023-05-16 |
Family
ID=86308209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310169272.3A Pending CN116117139A (en) | 2023-02-27 | 2023-02-27 | Aluminum scandium alloy target material and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116117139A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1439239A1 (en) * | 2003-01-15 | 2004-07-21 | United Technologies Corporation | An aluminium based alloy |
| US20100282428A1 (en) * | 2009-05-06 | 2010-11-11 | United Technologies Corporation | Spray deposition of l12 aluminum alloys |
| CN105986134A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon aluminum alloy electronic packaging material |
| CN109652670A (en) * | 2019-02-26 | 2019-04-19 | 中南大学 | A kind of preparation method of Spray-formed Aluminum Alloy |
| CN111926297A (en) * | 2020-09-22 | 2020-11-13 | 爱发科电子材料（苏州）有限公司 | Manufacturing method of aluminum and aluminum alloy target blank |
| CN113802074A (en) * | 2021-08-04 | 2021-12-17 | 苏州奥拓博科新材料科技有限公司 | Hot isostatic pressing densification method suitable for spray deposition of high-strength aluminum alloy |
| CN114774865A (en) * | 2022-04-15 | 2022-07-22 | 宁波江丰电子材料股份有限公司 | Aluminum-scandium alloy target material and preparation method thereof |
-
2023
- 2023-02-27 CN CN202310169272.3A patent/CN116117139A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1439239A1 (en) * | 2003-01-15 | 2004-07-21 | United Technologies Corporation | An aluminium based alloy |
| US20100282428A1 (en) * | 2009-05-06 | 2010-11-11 | United Technologies Corporation | Spray deposition of l12 aluminum alloys |
| CN105986134A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon aluminum alloy electronic packaging material |
| CN109652670A (en) * | 2019-02-26 | 2019-04-19 | 中南大学 | A kind of preparation method of Spray-formed Aluminum Alloy |
| CN111926297A (en) * | 2020-09-22 | 2020-11-13 | 爱发科电子材料（苏州）有限公司 | Manufacturing method of aluminum and aluminum alloy target blank |
| CN113802074A (en) * | 2021-08-04 | 2021-12-17 | 苏州奥拓博科新材料科技有限公司 | Hot isostatic pressing densification method suitable for spray deposition of high-strength aluminum alloy |
| CN114774865A (en) * | 2022-04-15 | 2022-07-22 | 宁波江丰电子材料股份有限公司 | Aluminum-scandium alloy target material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI546401B (en) | Cu-Ga alloy sputtering target and its manufacturing method | |
| RU2333086C2 (en) | Refractory metal and its alloy purified with laser treatment and melting | |
| CN110983262B (en) | Preparation method of aluminum-scandium alloy target material | |
| CN108796314B (en) | Preparation method of aluminum-silicon alloy for electronic packaging | |
| CN111647858B (en) | Preparation method of aluminum-scandium alloy target material | |
| CN104131211A (en) | Preparation method of jet-molded multi-gradient high-speed steel | |
| CN111560585A (en) | Preparation method of aluminum scandium target material | |
| TWI617680B (en) | Cu-Ga alloy sputtering target and manufacturing method thereof | |
| US20230024291A1 (en) | Method for producing molybdenum alloy targets | |
| CN114293159A (en) | Preparation method of nickel-based alloy target material | |
| CN110218981A (en) | A kind of copper gallium target and preparation method thereof | |
| JP5750393B2 (en) | Cu-Ga alloy sputtering target and method for producing the same | |
| CN116117139A (en) | Aluminum scandium alloy target material and preparation method and application thereof | |
| TWI387497B (en) | Manufacturing method of nickel alloy target | |
| CN1256181A (en) | Multilayer spraying deposition method and equipment for preparation of large deposited blank | |
| CN114433859B (en) | High-quality electrode for titanium alloy powder, and preparation and application thereof | |
| TW201350598A (en) | Method of manufacturing iron-cobalt alloy target | |
| CN114603147B (en) | Preparation method of low-oxygen-content zirconium oxygen-free copper alloy powder for powder metallurgy | |
| CN112296606B (en) | Preparation method of vacuum centrifugal TiAl intermetallic compound plate | |
| CN104775043A (en) | GH742y alloy turbine disk blank preparation method | |
| CN114645240B (en) | Preparation method of metal nickel-aluminum composite strip for electronic industry | |
| CN110614353A (en) | Method for reducing machining allowance of inner cavity of centrifugal cast tube | |
| CN114686717B (en) | Preparation method of high-entropy alloy | |
| CN117483796A (en) | Diphase high-entropy alloy based on 3D printing and preparation method thereof | |
| CN115625346A (en) | Self-removing method for 3D printing rare earth modified high-strength aluminum alloy constraint structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |