CN116113244A - Laminated battery structure and preparation process thereof - Google Patents
Laminated battery structure and preparation process thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a novel 2T laminated solar cell composed of perovskite and crystalline silicon cells and a preparation process thereof, wherein the laminated cell structure comprises a top cell unit, a bottom cell unit and an intermediate layer positioned between the top cell unit and the bottom cell unit; the top battery unit comprises a second transparent electrode, a second transmission layer, a two-dimensional perovskite light absorption layer, a first transmission layer, a first transparent electrode layer and an optical coupling layer which are sequentially laminated in the direction from far to near the middle layer. The invention can obtain good perovskite battery performance by adopting the nano silicon tunneling junction structure. The laminated battery structure has high photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a two-end laminated cell structure consisting of a PERC bottom cell and a perovskite top cell and a preparation method thereof.
Background
The solar cell is a semiconductor device for directly converting solar light energy into electric energy, and has wide development prospect under the condition of current energy shortage by utilizing renewable resources such as light energy.
At present, the mass production efficiency of batteries such as PERC batteries, heterojunction batteries and topcon batteries in the industry is continuously improved, the conversion efficiency limit is gradually approached, and the stacked solar battery is a means for further greatly improving the conversion efficiency of the battery. The laminated solar cell integrates cells with different photovoltaic responses by various means, and has more application prospect in a laminated solar cell structure with two-end (2T) laminated cells. In various laminated batteries, the cost of the batteries such as GIGS, silicon films and the like is high, and the batteries cannot be directly compatible with the structure of industrial mass production batteries. Although heterojunction cells and perovskite cells are reported to form stacked solar cells, the cell structure with the largest industry standard is a PERC cell, and 2T cells formed by PERC cells and perovskite cells are rarely reported. In addition, because of the process characteristics of perovskite cell preparation, in most reported stacked cells, perovskite cell preparation is based on a planar structure of the bottom cell. The planar structure greatly improves the reflectivity of the battery, so that the conversion efficiency of the bottom battery is drastically reduced, and the photoelectric conversion performance of the battery cannot be fully exerted.
Therefore, there is a need for a stacked solar cell that is low in cost, has high conversion efficiency, and can be mass-produced.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a novel 2T laminated solar cell composed of perovskite and a crystalline silicon cell and a preparation process thereof.
In one aspect, the present invention provides a stacked cell structure comprising a top cell, a bottom cell, and an intermediate layer between the top cell and the bottom cell; the intermediate layer is constructed as a tunneling junction consisting of a p+/n+ double-layer crystalline silicon film;
the top battery unit comprises a second transparent electrode, a second transmission layer, a two-dimensional perovskite light absorption layer, a first transmission layer, a first transparent electrode layer and an optical coupling layer which are sequentially stacked in the direction from far to near the middle layer;
the material of the two-dimensional perovskite light absorbing layer is RP type (RNH) with different components 3 ) 2 A n-1 B n X 3n+1 Wherein n=1, 2,3,4, …; or DJ type A' (MA) m-1 Pb m I 3m+1 Wherein m=1, 2,3,4, …;
the optical coupling layer is made of high refractive index medium anti-reflection layer material, the refractive index is more than or equal to 2, and MoO can be adopted 3 、V 2 O 5 、TeO 2 、Al 2 O 3 、LiF、MgF 2 、SiO 2 Any one of the materials has a thickness of 20-25 nm;
the bottom battery unit is a PERC solar battery.
As a further improvement of the embodiment of the present invention, the top battery cell further includes a passivation protection film layer disposed on a side of the optical coupling layer facing away from the first transparent electrode layer.
As a further improvement of the embodiment of the invention, the high refractive index medium anti-reflection layer material adopted by the optical coupling layer is MoO 3 、V 2 O 5 、TeO 2 、Al 2 O 3 、LiF、MgF 2 、SiO 2 The thickness of any one of the materials is 20-25 nm.
As a further improvement of the embodiment of the present invention, the bottom battery cell includes a passivation contact layer, a silicon oxide layer, a single crystal silicon substrate layer, a rear passivation film layer, a rear conductive protective layer, and a rear electrode, which are sequentially stacked in a direction from close to far from the intermediate layer.
As a further improvement of the embodiment of the present invention, the first transport layer is an electron transport layer and the second transport layer is a hole transport layer, or the first transport layer is a hole transport layer and the second transport layer is an electron transport layer;
the hole transport layer is a nickel oxide layer; the electron transport layer is a zinc oxide layer or a lithium fluoride layer.
As a further improvement of the embodiment of the invention, the passivation contact layer of the bottom battery unit is an n-layer silicon film passivation contact layer and is constructed into a suede structure;
the passivation contact layer is formed with an inner contact electrode on a surface facing the intermediate layer.
In another aspect, the invention discloses a process for preparing a laminated battery structure, comprising the steps of:
s1, providing a PERC solar cell; the method specifically comprises the following steps: the front and back sides of the monocrystalline silicon piece are textured by adopting alkaline solution, and a textured structure with the side length of 1-10 mu m of the pyramid base is prepared; performing phosphorus diffusion on the front side of the monocrystalline silicon wafer to form an n layer, and forming a front side pn junction emission region; etching and polishing the back surface of the monocrystalline silicon piece by using acid or alkali solution to remove the back surface diffusion layer and the side surface conductive channels; thermally oxidizing the monocrystalline silicon piece in an oxidation furnace to form silicon oxide layers on the front surface and the back surface; oxidizing and annealing the back surface, and depositing an alumina passivation layer on the back surface; depositing a TCO conductive protective layer on the back surface after annealing; preparing a back electrode;
s2, forming an intermediate layer on the PERC solar cell; the intermediate layer is constructed as a tunneling junction consisting of a p+/n+ double-layer crystalline silicon film;
s3, forming a top battery cell with a two-dimensional perovskite light absorption layer on the middle layer;
the top battery unit comprises a second transparent electrode, a second transmission layer, a two-dimensional perovskite light absorption layer, a first transmission layer, a first transparent electrode layer and an optical coupling layer which are sequentially stacked in the direction from far to near the middle layer.
As a further improvement of the embodiment of the invention, the formation of the intermediate layer on the PERC solar cell is particularly formed by deposition, including PVD physical vapor deposition, or RPD reactive plasma deposition,
as a further improvement of the embodiment of the invention, the front and the back of the middle layer are textured to prepare a pyramid-shaped textured structure; the method specifically comprises the following steps of: depositing aluminum oxide and silicon nitride on the back; back laser grooving, and partially ablating the aluminum oxide and silicon nitride layers; printing back aluminum paste and silver paste, and sintering; cleaning the front surface; oxidizing the front surface, and forming a thin oxide layer with the thickness of 1-10nm on the front surface; and depositing a front passivation contact layer, and forming an n-layer doped amorphous/polycrystalline silicon on the silicon oxide layer.
As a further improvement of the embodiment of the present invention, the method for preparing the two-dimensional perovskite light absorbing layer is as follows: predetermined amount of phenethyl ammonium bromide, CH 3 NH 3 I and PbI 2 Dissolving in N, N-dimethylformamide solvent under the preset temperature condition, heating and stirring to obtain a two-dimensional RP type perovskite precursor solution;
spin-coating the two-dimensional RP type perovskite precursor solution on the surface of the second transmission layer at a rotating speed of 3000-3500 rpm, and then annealing at 100 ℃ for 20min to obtain the two-dimensional perovskite light-absorbing layer.
As a further improvement of the embodiment of the present invention, the method for preparing the two-dimensional perovskite light absorbing layer may further be:
butanediamine hydroiodidate and CH in a molar ratio of 1:4:5 3 NH 3 I and PbI 2 Dissolving in N, N-dimethylformamide, heating and stirring to obtain DJ-phase two-dimensional perovskite precursor solution;
spin-coating the DJ phase two-dimensional perovskite precursor solution on the surface of the second transmission layer at a rotating speed of 5000-5500 rpm, and then annealing at 100 ℃ for 10min to obtain the two-dimensional perovskite light-absorbing layer.
As a further improvement of the embodiment of the present invention, the anti-reflection layer is one or more of silicon oxide, silicon nitride, silicon oxynitride, and magnesium fluoride.
As a further improvement of the embodiment of the present invention, the front passivation film layer includes an alumina layer and a silica layer which are stacked.
As a further improvement of the embodiment of the present invention, the conductive protective layer is configured asA transparent conductive TCO protective layer, the TCO is selected from ZnO, in 2 O 3 、Ga 2 O 3 、TiO 2 、ZrO 2 One or more mixtures thereof.
The invention has the following beneficial effects:
1. the surface of the midsole battery adopts an alkali texturing pyramid suede structure, so that the defects that the perovskite layer is unevenly deposited and the overall electrical performance is poor due to the fact that if the contact surface is the suede in the preparation process of the perovskite battery are overcome, and the optical performance of the battery can be greatly improved;
2. the bottom battery adopts the PERC battery, can be seamlessly upgraded with industry, and realizes low-cost mass production of the battery with the laminated structure;
3. according to the invention, when the perovskite battery and the crystalline silicon solar battery form the 2T laminated solar battery, the tunneling junction is used as the link layer of the two batteries, so that the technical defects that special deposition equipment is needed or the perovskite battery prepared on the TCO is very uneven and poor in performance in the prior art are overcome.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic view of a laminated battery structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a two-dimensional perovskite light absorbing layer of a stacked cell according to an embodiment of the invention;
the examples in the figures are shown as: 1-top battery cell; 11-a first transport layer; 12-a two-dimensional perovskite light absorbing layer; 13-a second transport layer; 14-an antireflection layer; 15-a transparent conductive layer; 151-a first transparent electrode layer; 152-a second transparent electrode layer; 16-passivation protective film layer; 17-an optical coupling layer; a 2-bottom battery cell; 21-passivating the contact layer; a 22-silicon oxide layer; a 23-monocrystalline silicon substrate layer; 24-a back passivation film layer; 25-a backside conductive protective layer; 26 backside electrode.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The embodiment of the invention provides a laminated battery structure, which is shown in fig. 1, and comprises a top battery unit 1, a bottom battery unit 2 and an intermediate layer 3 positioned between the top battery unit 1 and the bottom battery unit 2; the middle layer 3 is constructed as a tunneling junction formed by p+/n+ double-layer crystalline silicon films, and specifically comprises a p+ crystalline silicon film layer 31 and an n+ double-layer crystalline silicon film 32;
in particular, as shown in fig. 2, the top battery cell 1 includes a second transparent electrode 152, a second transmission layer 13, a two-dimensional perovskite light absorbing layer 12, a first transmission layer 11, a first transparent electrode layer 151, and an optical coupling layer 17, which are stacked in this order in a direction from far to near the intermediate layer 3; the first transport layer 11 is an electron transport layer and the second transport layer 13 is a hole transport layer, or the first transport layer 11 is a hole transport layer and the second transport layer 13 is an electron transport layer.
The material of the two-dimensional perovskite light absorbing layer 12 is of RP type (RNH) with different compositions 3 ) 2 A n-1 B n X 3n+1 Wherein n=1, 2,3,4, …; or DJ type A' (MA) m-1 Pb m I 3m+1 Wherein m=1, 2,3,4, …;
the bottom cell 2 is a PERC solar cell.
Wherein the optical coupling layer adopts high refractive index medium anti-reflection layer material, the refractive index is more than or equal to 2, moO can be adopted 3 、V 2 O 5 、TeO 2 、Al 2 O 3 、LiF、MgF 2 、SiO 2 Any one of the materials has a thickness of 20-25 nm;
the bottom cell is a PERC solar cell.
Wherein the high refractive index medium anti-reflection layer material adopted by the optical coupling layer is MoO 3 、V 2 O 5 、TeO 2 、Al 2 O 3 、LiF、MgF 2 、SiO 2 The thickness of any one of the materials is 20-25 nm.
In the embodiment of the invention, the bottom battery unit comprises a passivation contact layer, a silicon oxide layer, a monocrystalline silicon substrate layer, a back passivation film layer, a back conductive protective layer and a back electrode which are sequentially stacked in the direction from approaching to separating from the middle layer.
The hole transport layer 13 is a nickel oxide layer; the electron transport layer 11 is a zinc oxide layer or a lithium fluoride layer.
In the embodiment of the invention, the passivation contact layer of the bottom battery unit is an n-layer silicon film passivation contact layer and is constructed into a suede structure;
the passivation contact layer is formed with an inner contact electrode on a surface facing the intermediate layer.
In the embodiment of the present invention, as shown in fig. 1, the top battery unit 1 further includes an antireflection layer 14, a transparent conductive layer 15, and a passivation protection film layer 16 sequentially stacked in a direction from a distance to a near to the electron transport layer. The front electrode 26 may be one or more of gold, silver, copper, and aluminum; the anti-reflection layer 14 may be one or more of silicon oxide, silicon nitride, silicon oxynitride, mgF; the transparent conductive layer 15 may be one or more of zinc oxide, tin oxide, molybdenum oxide, and indium oxide; passivation layer 16 is a C60 material; the electron transport layer 11 is a LiF layer; the hole transport layer 13 is Sprio. The passivation layer 16 is arranged on the side of the optical coupling layer facing away from the first transparent electrode layer.
Further, the bottom battery cell 2 includes a passivation contact layer 21, a silicon oxide layer 22, a single crystal silicon substrate layer 23, a back passivation film layer 24, a back conductive protective layer 25, and a back electrode 26, which are stacked in this order in a direction from close to far from the intermediate layer 3.
The hole transport layer 13 is a nickel oxide layer; the electron transport layer 11 is a lithium fluoride layer, and a zinc oxide layer may be selected. The passivation contact layer 21 of the bottom battery unit 2 is an n-layer silicon thin film passivation contact layer and is constructed in a textured structure. The passivation contact layer 21 is formed with an inner contact electrode on a surface facing the intermediate layer 3.
The back passivation film layer 24 comprises an n-layer silicon film passivation contact layer and a silicon oxide layer, and a p++ local back surface field layer is arranged on the lower surface of the n-layer monocrystalline silicon substrate layer. The back conductive protective layer 25 is an aluminum oxide or silicon nitride layer; the back electrode 26 may be one or more of gold, silver, copper, aluminum.
Example 2
The embodiment of the invention provides a preparation process of the laminated battery structure, which comprises the following steps:
s1, providing a PERC solar cell; the method specifically comprises the following steps: the front and back sides of the monocrystalline silicon piece are textured by adopting alkaline solution, and a textured structure with the side length of 1-10 mu m of the pyramid base is prepared; performing phosphorus diffusion on the front side of the monocrystalline silicon wafer to form an n layer, and forming a front side pn junction emission region; etching and polishing the back surface of the monocrystalline silicon piece by using acid or alkali solution to remove the back surface diffusion layer and the side surface conductive channels; thermally oxidizing the monocrystalline silicon piece in an oxidation furnace to form silicon oxide layers on the front surface and the back surface; oxidizing and annealing the back surface, and depositing an alumina passivation layer on the back surface; depositing a TCO conductive protective layer on the back surface after annealing; preparing a back electrode;
s2, forming an intermediate layer on the PERC solar cell; the intermediate layer is constructed as a tunneling junction consisting of a p+/n+ double-layer crystalline silicon film;
s3, forming a top battery cell with a two-dimensional perovskite light absorption layer on the middle layer;
the top battery unit comprises a second transparent electrode, a second transmission layer, a two-dimensional perovskite light absorption layer, a first transmission layer, a first transparent electrode layer and an optical coupling layer which are sequentially laminated in the direction from far to near the middle layer.
In the embodiment of the invention, the intermediate layer formed on the PERC solar cell is formed by adopting a deposition mode, including PVD physical vapor deposition or RPD active plasma deposition; preparing a pyramid-shaped suede structure by making the front and the back of the middle layer into velvet; the method specifically comprises the following steps of: depositing aluminum oxide and silicon nitride on the back; back laser grooving, and partially ablating the aluminum oxide and silicon nitride layers; printing back aluminum paste and silver paste, and sintering; cleaning the front surface; oxidizing the front surface, and forming a thin oxide layer with the thickness of 1-10nm on the front surface; and depositing a front passivation contact layer, and forming an n-layer doped amorphous/polycrystalline silicon on the silicon oxide layer.
The method for preparing the two-dimensional perovskite light absorption layer comprises the following steps: predetermined amount of phenethyl ammonium bromide, CH 3 NH 3 I and PbI 2 Dissolving in N, N-dimethylformamide solvent under the preset temperature condition, heating and stirring to obtain a two-dimensional RP type perovskite precursor solution; spin-coating a two-dimensional RP type perovskite precursor solution on the surface of the second transmission layer at a rotating speed of 3000-3500 rpm, and then annealing at 100 ℃ for 20min to obtain a two-dimensional perovskite light absorption layer.
In other alternative embodiments, the method for preparing a two-dimensional perovskite light absorbing layer may further be: butanediamine hydroiodidate and CH in a molar ratio of 1:4:5 3 NH 3 I and PbI 2 Dissolving in N, N-dimethylformamide, heating and stirring to obtain DJ-phase two-dimensional perovskite precursor solution; spin-coating the DJ phase two-dimensional perovskite precursor solution on the surface of the second transmission layer at a rotating speed of 5000-5500 rpm, and then annealing at 100 ℃ for 10min to obtain the two-dimensional perovskite light-absorbing layer.
The method specifically comprises the following steps after back etching and polishing:
depositing aluminum oxide and silicon nitride on the back; back laser grooving, and partially ablating the aluminum oxide and silicon nitride layers; printing back aluminum paste and silver paste, and sintering;
cleaning the front surface; oxidizing the front surface, and forming a thin oxide layer with the thickness of 1-10nm on the front surface; and depositing a front passivation contact layer, and forming an n-layer doped amorphous/polycrystalline silicon on the silicon oxide layer.
In the embodiment of the present invention, optionally, the anti-reflection layer is one or more of silicon oxide, silicon nitride, silicon oxynitride, and magnesium fluoride; the front passivation film layer comprises an alumina layer and a silica layer which are stacked.
The invention has the following beneficial effects:
1. the surface of the midsole battery adopts an alkali texturing pyramid suede structure, so that the defects that the perovskite layer is unevenly deposited and the overall electrical performance is poor due to the fact that if the contact surface is the suede in the preparation process of the perovskite battery are overcome, and the optical performance of the battery can be greatly improved;
2. the bottom battery adopts the PERC battery, can be seamlessly upgraded with industry, and realizes low-cost mass production of the battery with the laminated structure;
3. according to the invention, when the perovskite battery and the crystalline silicon solar battery form the 2T laminated solar battery, the tunneling junction is used as the link layer of the two batteries, so that the technical defects that special deposition equipment is needed or the perovskite battery prepared on the TCO is very uneven and poor in performance in the prior art are overcome.
Any combination of the above optional solutions may be adopted to form an optional embodiment of the present invention, which is not described herein.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. A laminated cell structure comprising a top cell, a bottom cell, and an intermediate layer between the top cell and the bottom cell; the intermediate layer is constructed as a tunneling junction consisting of a p+/n+ double-layer crystalline silicon film;
the top battery unit comprises a second transparent electrode, a second transmission layer, a two-dimensional perovskite light absorption layer, a first transmission layer, a first transparent electrode layer and an optical coupling layer which are sequentially stacked in the direction from far to near the middle layer;
the material of the two-dimensional perovskite light absorbing layer is RP type (RNH) with different components 3 ) 2 A n-1 B n X 3n+1 WhereinN=1, 2,3,4, …; or DJ type A' (MA) m-1 Pb m I 3m+1 Wherein m=1, 2,3,4, …;
the optical coupling layer is made of high refractive index medium anti-reflection layer material, the refractive index is more than or equal to 2, and MoO can be adopted 3 、V 2 O 5 、TeO 2 、Al 2 O 3 、LiF、MgF 2 、SiO 2 Any one of the materials has a thickness of 20-25 nm;
the bottom battery unit is a PERC solar battery.
2. The laminated cell structure of claim 1, wherein the top cell further comprises a passivation film layer disposed on a side of the optical coupling layer facing away from the first transparent electrode layer.
3. The laminated cell structure of claim 1, wherein the high refractive index dielectric anti-reflection layer material used for the optical coupling layer is MoO 3 、V 2 O 5 、TeO 2 、Al 2 O 3 、LiF、MgF 2 、SiO 2 The thickness of any one of the materials is 20-25 nm.
4. The laminated cell structure according to claim 1, wherein the bottom cell unit includes a passivation contact layer, a silicon oxide layer, a single crystal silicon substrate layer, a back passivation film layer, a back conductive protective layer, and a back electrode, which are laminated in this order in a direction from approaching to separating from the intermediate layer.
5. The laminate cell structure of claim 1, wherein the first transport layer is an electron transport layer and the second transport layer is a hole transport layer, or wherein the first transport layer is a hole transport layer and the second transport layer is an electron transport layer;
the hole transport layer is a nickel oxide layer; the electron transport layer is a zinc oxide layer or a lithium fluoride layer.
6. The laminated cell structure of claim 1, wherein the passivation contact layer of the bottom cell is an n-layer silicon thin film passivation contact layer configured as a textured structure;
the passivation contact layer is formed with an inner contact electrode on a surface facing the intermediate layer.
7. A process for preparing a laminated battery structure, comprising the steps of:
s1, providing a PERC solar cell; the method specifically comprises the following steps: the front and back sides of the monocrystalline silicon piece are textured by adopting alkaline solution, and a textured structure with the side length of 1-10 mu m of the pyramid base is prepared; performing phosphorus diffusion on the front side of the monocrystalline silicon wafer to form an n layer, and forming a front side pn junction emission region; etching and polishing the back surface of the monocrystalline silicon piece by using acid or alkali solution to remove the back surface diffusion layer and the side surface conductive channels; thermally oxidizing the monocrystalline silicon piece in an oxidation furnace to form silicon oxide layers on the front surface and the back surface; oxidizing and annealing the back surface, and depositing an alumina passivation layer on the back surface; depositing a TCO conductive protective layer on the back surface after annealing; preparing a back electrode;
s2, forming an intermediate layer on the PERC solar cell; the intermediate layer is constructed as a tunneling junction consisting of a p+/n+ double-layer crystalline silicon film;
s3, forming a top battery cell with a two-dimensional perovskite light absorption layer on the middle layer;
the top battery unit comprises a second transparent electrode, a second transmission layer, a two-dimensional perovskite light absorption layer, a first transmission layer, a first transparent electrode layer and an optical coupling layer which are sequentially stacked in the direction from far to near the middle layer.
8. The process for fabricating a stacked cell structure according to claim 1, wherein forming an intermediate layer on the PERC solar cell is specifically performed by deposition, including PVD physical vapor deposition, or RPD reactive plasma deposition.
9. The process for manufacturing a laminated cell structure according to claim 1, wherein the front and back surfaces of the intermediate layer are textured to manufacture a pyramid-shaped textured structure; the method specifically comprises the following steps of: depositing aluminum oxide and silicon nitride on the back; back laser grooving, and partially ablating the aluminum oxide and silicon nitride layers; printing back aluminum paste and silver paste, and sintering; cleaning the front surface; oxidizing the front surface, and forming a thin oxide layer with the thickness of 1-10nm on the front surface; and depositing a front passivation contact layer, and forming an n-layer doped amorphous/polycrystalline silicon on the silicon oxide layer.
10. The process for preparing a laminated cell structure according to claim 1, wherein the method for preparing the two-dimensional perovskite light absorbing layer comprises the following steps: predetermined amount of phenethyl ammonium bromide, CH 3 NH 3 I and PbI 2 Dissolving in N, N-dimethylformamide solvent under the preset temperature condition, heating and stirring to obtain a two-dimensional RP type perovskite precursor solution;
spin-coating the two-dimensional RP type perovskite precursor solution on the surface of the second transmission layer at a rotating speed of 3000-3500 rpm, and then annealing at 100 ℃ for 20min to obtain the two-dimensional perovskite light-absorbing layer.
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