CN116111302A - Terahertz-sense-oriented integrated on-chip non-magnetic simultaneous same-frequency duplexer - Google Patents
Terahertz-sense-oriented integrated on-chip non-magnetic simultaneous same-frequency duplexer Download PDFInfo
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- CN116111302A CN116111302A CN202310216624.6A CN202310216624A CN116111302A CN 116111302 A CN116111302 A CN 116111302A CN 202310216624 A CN202310216624 A CN 202310216624A CN 116111302 A CN116111302 A CN 116111302A
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- 238000002955 isolation Methods 0.000 description 9
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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Abstract
The invention discloses a terahertz-inductance-oriented integrated non-magnetic simultaneous same-frequency duplexer, which comprises a medium substrate, a microstrip ladder impedance filter, a varactor diode, a terahertz signal input/output port, a modulation signal input port, a grounding port and a Y-shaped microstrip transmission line connection. The invention solves the problem that the non-magnetic synchronous same-frequency duplexer of the lumped parameter circuit is not adaptive under the high-frequency condition through the design of the distributed parameter circuit. The main structure of the invention is composed of a microstrip circuit, the port for connecting the external modulation signal and the grounded port comprise lumped element filters, and the whole structure is simple and is easy to process and integrate.
Description
Technical Field
The invention relates to the technical field of millimeter wave communication, in particular to a terahertz-passsense-oriented integrated non-magnetic simultaneous same-frequency duplexer.
Background
As one of the key technologies of 6G, a sense-of-general integrated network will deploy a large number of intelligent nodes, but dynamic deployment will lead to a complex wireless environment, causing mutual interference of signals. The transmission/reception interference between antennas is an intrinsic factor limiting the performance of the integrated sense of general, and is also a main factor limiting the improvement of the performance of the integrated sense of general. The in-band full duplex technology is a potential method for solving the problem of antenna receiving and transmitting interference, can realize the simultaneous receiving and transmitting of electromagnetic waves at the same frequency, and has the technical core of restraining self-interference. In the fields of optics and microwaves, the same-frequency diplexer needs ferrite and other materials to apply permanent magnetic bias to obtain the effect of nonreciprocal transmission, has large volume and is not integrated, is not compatible with the technology of commercial integrated circuits, and is not beneficial to the miniaturized design of a terahertz general sense integrated system. Therefore, research on an on-chip nonmagnetic simultaneous co-frequency duplexer is of great importance.
In recent years, foreign scientific research teams successfully adopt a space-time modulation technology to realize the nonreciprocal effect without external magnetic bias, and the direction is indicated for designing the non-magnetic simultaneous same-frequency duplexer of the terahertz wave band on the chip. The general implementation method comprises the following steps: a low-frequency time-varying modulation signal is discretely loaded on a certain medium, and the frequency, amplitude and initial phase of the modulation signal are controlled to realize the nonreciprocal propagation of electromagnetic waves. Taking a circulator as an example, the time modulation is embodied as three paths of equal phase difference modulation signals, and the space modulation is embodied as a symmetrical resonant structure. When modulation is not added, the whole structure is in a superposition degeneracy state of the clockwise circulator and the anticlockwise circulator, when modulation is given, one state can be reflected in the phase increment direction of the applied modulation signal, the effect similar to ferrite is achieved, the time inversion symmetry is broken, and the function of the circulator is realized. The existing on-chip nonmagnetic nonreciprocal device is mainly oriented to 5G design, such as an on-chip nonmagnetic isolator designed in 2020 by Cang Guwei and the like, and the working frequency of the on-chip nonmagnetic nonreciprocal device is about 2.6 GHz. In the lower frequency band, the design of the radio frequency device has more experience as a reference, in addition, because the electric length is larger, the processing test of the device is more convenient, and in the sub-millimeter wave and terahertz frequency band, the difficulty in the design and processing technology caused by the higher frequency also leads to the fact that the on-chip non-magnetic co-frequency duplexer of the terahertz wave band has not been reported yet.
Disclosure of Invention
The invention aims to provide a non-magnetic simultaneous same-frequency duplexer for terahertz through sense integration, aiming at the defects of the prior art.
The invention aims at realizing the following technical scheme:
a terahertz-induced integrated non-magnetic simultaneous same-frequency duplexer comprises a dielectric substrate, a microstrip ladder impedance filter, a varactor, a terahertz signal input/output port, a modulation signal input port, a grounding port and a Y-shaped microstrip transmission line connection, wherein the microstrip ladder impedance filter is connected with the dielectric substrate; the microstrip ladder impedance filters are in three groups, namely a first microstrip ladder impedance filter, a second microstrip ladder impedance filter and a third microstrip ladder impedance filter; the three groups of varactors are respectively a first varactor, a second varactor and a third varactor; the terahertz signal input and output ports are respectively a first terahertz signal input and output port, a second terahertz signal input and output port and a third terahertz signal input and output port; the center of the top of the medium substrate is a connection point of a microstrip transmission line and is connected with the microstrip transmission line in a Y shape; the first microstrip ladder impedance filter, the second microstrip ladder impedance filter and the third microstrip ladder impedance filter are respectively externally connected with a first terahertz signal input/output port, a second terahertz signal input/output port and a third terahertz signal input/output port; the first varactor diode, the second varactor diode and the third varactor diode are connected with a grounding port through a microstrip branch on one side facing the center of the structure, and are connected with a modulation signal input port through a microstrip branch on one side facing the outside of the structure.
Further, the dielectric substrate is a quartz substrate with a thickness of 50 μm.
Further, the first microstrip ladder impedance filter, the second microstrip ladder impedance filter and the third microstrip ladder impedance filter are ladder impedance filters and have the same structure, and each microstrip filter is formed by connecting three sections of microstrip lines with different electrical lengths and different impedances in series.
Further, the length of the first section of microstrip line is 0.24mm, the width is 0.05mm, the length of the second section of microstrip line is 0.5mm, the width is 0.91mm, and the length of the third section of microstrip line is 0.2mm, and the width is 0.1mm.
Further, the varactor diode is a single-tube flip-chip GaAs diode with the tube core diameter of 1 mu m.
Further, the total of 3 groups of modulation signal input ports are respectively a first modulation signal input port, a second modulation signal input port and a third modulation signal input port.
Further, the first modulation signal input port, the second modulation signal input port and the third modulation signal input port introduce regulating signals through a low-pass filter; the first grounding port, the second grounding port and the third grounding port are grounded through the low-pass filter.
Further, the low-pass filter is formed by lumped elements and comprises two inductors, wherein the two inductors are l1=0.3nh, l2=0.3nh and the capacitor is c=0.2pf.
Further, the total of the grounding ports is 3 groups, namely a first grounding port, a second grounding port and a third grounding port.
Further, the Y-shaped microstrip transmission line is connected with three ring structures, and included angles of the three ring structures are 120 degrees, so that the Y-shaped microstrip transmission line is congruent in structure.
The invention has the following effects:
(1) The invention solves the problem that the non-magnetic synchronous same-frequency duplexer of the lumped parameter circuit is not adaptive under the high-frequency condition through the design of the distributed parameter circuit.
(2) The main structure of the invention is composed of a microstrip circuit, the port for connecting the external modulation signal and the grounded port comprise lumped element filters, and the whole structure is simple and is easy to process and integrate.
(3) The invention does not need to be externally added with magnetic bias or magnetic materials, has small structure, convenient processing and high isolation, works in the millimeter wave terahertz frequency band, and is convenient for integration with other on-chip terahertz devices.
Drawings
Fig. 1 is a schematic structural diagram of a terahertz-oriented integrated non-magnetic simultaneous same-frequency duplexer.
Fig. 2 is a schematic diagram of a low-pass filter according to the present invention.
Fig. 3 is a schematic diagram of a simulation curve of return loss, insertion loss and isolation of a terahertz sense-of-general-integrated non-magnetic co-frequency duplexer with an arbitrary terahertz signal input/output port as an input port according to an embodiment.
The marks in the figure: 1. a first terahertz signal input/output port; 2. a second terahertz signal input/output port; 3. a third terahertz signal input/output port; 4. a first microstrip ladder impedance filter; 5. a second microstrip ladder impedance filter; 6. a third microstrip ladder impedance filter; 7. a first modulated signal input port; 8. a second modulated signal input port; 9. a third modulated signal input port; 10. a first varactor; 11. a second varactor; 12. a third varactor; 13. a first ground port; 14. a second ground port; 15. a third ground port; 16. y-shaped microstrip transmission lines are connected.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings and examples.
As shown in fig. 1, the non-magnetic simultaneous same-frequency duplexer for terahertz through-sense integration provided in this embodiment includes a dielectric substrate, a microstrip ladder impedance filter, a varactor, a terahertz signal input/output port, a modulation signal input port, a ground port, and a Y-shaped microstrip transmission line connection. The microstrip ladder impedance filters are in three groups, namely a first microstrip ladder impedance filter 4, a second microstrip ladder impedance filter 5 and a third microstrip ladder impedance filter 6; the varactors comprise three groups, namely a first varactor 10, a second varactor 11 and a third varactor 12; the terahertz signal input and output ports are respectively a first terahertz signal input and output port 1, a second terahertz signal input and output port 2 and a third terahertz signal input and output port 3; the modulated signal input ports are 3 groups, namely a first modulated signal input port 7, a second modulated signal input port 8 and a third modulated signal input port 9; the three groups of grounding ports are respectively a first grounding port 13, a second grounding port 14 and a third grounding port 15.
The center of the top of the medium substrate is a connection point of a microstrip transmission line, which is a Y-shaped microstrip transmission line connection 16, and is connected with three circulator substructures, the included angles of the three substructures are 120 degrees, and the structure is congruent.
The first microstrip ladder impedance filter 4, the second microstrip ladder impedance filter 5 and the third microstrip ladder impedance filter 6 are completely identical in structure and respectively composed of three sections of microstrip lines in series, wherein the length of the first section of microstrip line is 0.24mm, the width of the first section of microstrip line is 0.05mm, the length of the second section of microstrip line is 0.5mm, the width of the second section of microstrip line is 0.91mm, the length of the third section of microstrip line is 0.2mm, and the width of the third section of microstrip line is 0.1mm.
The first microstrip ladder impedance filter 4, the second microstrip ladder impedance filter 5 and the third microstrip ladder impedance filter 6 are respectively externally connected with the first terahertz signal input/output port 1, the second terahertz signal input/output port 2 and the third terahertz signal input/output port 3, and the port impedance is 50Ω.
The first varactor 11, the second varactor 12 and the third varactor 13 have the same structure, one side facing the center of the structure is connected with a grounding port through a microstrip branch with the length of 0.775mm and the width of 0.125mm, and one side facing the outside of the structure is connected with a modulation signal input port through a microstrip branch with the length of 0.775mm and the width of 0.125 mm.
The first, second and third modulation signal input ports 7, 8, 9 introduce the regulation signal through a low pass filter as shown in fig. 2.
The first ground port 13, the second ground port 14, and the third ground port 15 are grounded through a low pass filter as shown in fig. 2.
The low-pass filter is composed of lumped elements, and the structure of the low-pass filter is shown in fig. 2, wherein two inductors are l1=0.3nh, l2=0.3nh, and the capacitor is c=0.2pf.
The dielectric substrate is a quartz substrate with the thickness of 50 mu m, the microstrip metal structure on the substrate is composed of gold with the thickness of 2 mu m, and the varactor is a single-tube flip-chip GaAs diode with the tube core diameter of 1 mu m.
The implementation method of the non-magnetic simultaneous same-frequency duplexer for terahertz through sensing integration provided by the embodiment comprises the following steps: three paths of sine modulation signals with the amplitude of 2.6V and the initial phase of anticlockwise (according to figure 1) are loaded on the first modulation signal input port 7, the second modulation signal input port 8 and the third modulation signal input port 9, the sine modulation signals with the frequency of 5.25GHz and the reverse bias voltage of 2.6V are sequentially increased, and the time inversion symmetry of the system is broken through the functions of the first varactor 11, the second varactor 12 and the third varactor 13, so that the nonreciprocal effect is realized.
When the circulator is deployed by taking the first terahertz signal input/output port 1 as an input port, the second terahertz signal input/output port 2 as a transmission port and the third terahertz signal input/output port 3 as an isolation port, the return loss, insertion loss and isolation simulation curves of the circulator are shown in fig. 3. When the working frequency is 140GHz, the return loss is 15.097dB, the insertion loss is 10.577dB, and the isolation is 15.011dB. Because the whole circulator structure has C3 symmetry, when the second terahertz signal input/output port 2 is used as an input port, the third terahertz signal input/output port 3 is used as a transmission port, the first terahertz signal input/output port 1 is used as an isolation port to deploy the circulator, and the third terahertz signal input/output port 3 is used as an input port, the first terahertz signal input/output port 1 is used as a transmission port, and the second terahertz signal input/output port 2 is used as an isolation port to deploy the circulator, the return loss, insertion loss and isolation simulation curves of the circulator are also shown in fig. 3.
In addition, the invention does not need to be externally added with magnetic bias or magnetic materials, has small structure, convenient processing and high isolation, works in the millimeter wave terahertz frequency band, and is convenient to integrate with other on-chip terahertz devices.
The foregoing is merely a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any modification and substitution based on the technical scheme and the inventive concept provided by the present invention should be covered in the scope of the present invention.
Claims (10)
1. Terahertz is led to and is felt non-magnetism co-frequency duplexer of integration towards, its characterized in that: the device comprises a medium substrate, a microstrip ladder impedance filter, a varactor diode, a terahertz signal input/output port, a modulation signal input port, a grounding port and a Y-shaped microstrip transmission line connection; the microstrip ladder impedance filters are in three groups, namely a first microstrip ladder impedance filter, a second microstrip ladder impedance filter and a third microstrip ladder impedance filter; the three groups of varactors are respectively a first varactor, a second varactor and a third varactor; the terahertz signal input and output ports are respectively a first terahertz signal input and output port, a second terahertz signal input and output port and a third terahertz signal input and output port; the center of the top of the medium substrate is a connection point of a microstrip transmission line and is connected with the microstrip transmission line in a Y shape; the first microstrip ladder impedance filter, the second microstrip ladder impedance filter and the third microstrip ladder impedance filter are respectively externally connected with a first terahertz signal input/output port, a second terahertz signal input/output port and a third terahertz signal input/output port; the first varactor diode, the second varactor diode and the third varactor diode are connected with a grounding port through a microstrip branch on one side facing the center of the structure, and are connected with a modulation signal input port through a microstrip branch on one side facing the outside of the structure.
2. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as claimed in claim 1, wherein: the dielectric substrate is a quartz substrate with the thickness of 50 mu m.
3. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as claimed in claim 1, wherein: the first microstrip ladder impedance filter, the second microstrip ladder impedance filter and the third microstrip ladder impedance filter are ladder impedance filters and have the same structure and are respectively formed by connecting three sections of microstrip lines with different electrical lengths and different impedances in series.
4. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as set forth in claim 3, wherein: the length of the first section of microstrip line is 0.24mm, the width is 0.05mm, the length of the second section of microstrip line is 0.5mm, the width is 0.91mm, the length of the third section of microstrip line is 0.2mm, and the width is 0.1mm.
5. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as claimed in claim 1, wherein: the varactor diode is a single-tube flip-chip GaAs diode with the tube core diameter of 1 mu m.
6. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as claimed in claim 1, wherein: the modulating signal input ports are 3 groups, namely a first modulating signal input port, a second modulating signal input port and a third modulating signal input port.
7. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as set forth in claim 6, wherein: the first modulation signal input port, the second modulation signal input port and the third modulation signal input port introduce regulating signals through a low-pass filter; the first grounding port, the second grounding port and the third grounding port are grounded through the low-pass filter.
8. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as set forth in claim 7, wherein: the low-pass filter is composed of lumped elements and comprises two inductors, wherein the two inductors are respectively l1=0.3nh, l2=0.3nh, and the capacitor is C=0.2pf.
9. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as claimed in claim 1, wherein: the grounding ports are 3 groups, namely a first grounding port, a second grounding port and a third grounding port.
10. The terahertz-induced integrated non-magnetic simultaneous co-frequency duplexer as claimed in claim 1, wherein: the Y-shaped microstrip transmission line is connected with three ring-shaped substructures, and the included angles of the three substructures are 120 degrees, so that the structure is congruent.
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| CN202310216624.6A CN116111302A (en) | 2023-03-03 | 2023-03-03 | Terahertz-sense-oriented integrated on-chip non-magnetic simultaneous same-frequency duplexer |
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| CN202310216624.6A CN116111302A (en) | 2023-03-03 | 2023-03-03 | Terahertz-sense-oriented integrated on-chip non-magnetic simultaneous same-frequency duplexer |
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