CN116107169A - Wafer gluing device and wafer gluing method - Google Patents
Wafer gluing device and wafer gluing method Download PDFInfo
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- CN116107169A CN116107169A CN202211650985.3A CN202211650985A CN116107169A CN 116107169 A CN116107169 A CN 116107169A CN 202211650985 A CN202211650985 A CN 202211650985A CN 116107169 A CN116107169 A CN 116107169A
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- wafer
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- rim
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Abstract
The invention provides a wafer gluing device and a wafer gluing method, wherein a ring piece is arranged on the outer side of a wafer, so that photoresist molecules at the edge of the wafer are attracted by wafer atoms near the edge of the wafer, and are also attracted by the ring piece in the opposite direction, so that part of photoresist on the edge of the wafer is guided to the ring piece, thereby reducing the condition that the photoresist forms a rim on the edge of the wafer, greatly reducing the size of the rim formed on the edge of the wafer by the photoresist, facilitating the removal of the rim, ensuring that the using amount of a photoresist removing solvent used for removing the rim later is more accurately controllable and stable, greatly reducing the influence on the photoresist in an effective area of the wafer, greatly improving the stability and controllability of the rim removing quality of the photoresist, and finally improving the yield of wafer gluing. The scheme is simple, easy to implement, compatible with the existing wafer gluing process and low in improvement cost.
Description
Technical Field
The present invention relates to the field of chip manufacturing technologies, and in particular, to a wafer gluing device and a wafer gluing method.
Background
The main nodes of the chip manufacturing process flow are a mask plate, photoresist and a photoetching machine. Among them, photoresist plays a very important role as a carrier and medium for pattern conversion. The photoresist has two applications, the first is to coat the mask on the mask plate as the photoresist of the mask plate. The second is on the wafer where the chips are prepared as wafer photoresist.
Wherein the photoresist is coated for a wafer. Wafer photoresist is coated in various ways, such as spraying, pulling, flowing, rolling, centrifuging, etc., and most commonly spin-coating by a coating apparatus (i.e., spin-coating method), particularly, during rotation of the wafer, the coated photoresist is caused to flow to the edge and back of the wafer by the combined action of centrifugal force, gravity, surface tension, etc. In this coating process, the photoresist forms a bulge, called a bead, on the edge and back of the edge of the wafer, which exists above and below the edge of the wafer, is prone to delamination, affects the pattern of the working area on the wafer, and causes contamination that must be removed.
Therefore, how to perform photoresist coating on a wafer and remove the rim of the photoresist coated on the wafer has been one of the hot spot problems of concern to those skilled in the art.
Disclosure of Invention
The invention aims to provide a wafer gluing device and a wafer gluing method, which can greatly reduce the size of a rim of photoresist coated on a wafer and improve the yield of wafer gluing.
In order to achieve the above object, the present invention provides a wafer glue spreading device, comprising:
the rotary machine is used for bearing the wafer to be glued and driving the wafer to rotate in the process of coating the photoresist;
the rotation control system is connected with the rotary machine table and used for controlling the rotation of the rotary machine table;
the ring piece is concentrically arranged outside the edge of the wafer, and a safety gap is reserved between the ring piece and the edge of the wafer;
and the gluing system is arranged at the corresponding position around the rotary machine table and is used for coating photoresist on the surface of the wafer.
Optionally, the wafer glue spreading device further comprises a clamp, which is used for clamping and fixing the ring piece and adjusting concentricity of the ring piece and the wafer.
Optionally, the wafer glue spreading device further comprises a photoresist rim removing system for removing a rim formed on the wafer edge by photoresist.
Optionally, the photoresist rim removal system includes a nozzle for spraying a photoresist stripping solvent onto the edge of the wafer.
Based on the same inventive concept, the invention also provides a wafer gluing method, which comprises the following steps:
fixing a wafer to be glued on a spin coating machine, and concentrically mounting a ring piece outside the edge of the wafer, wherein a safety gap is reserved between the ring piece and the edge of the wafer;
and by controlling the rotation of the spin coating machine, photoresist is spin coated on the wafer, and the photoresist on the edge of the wafer continuously diverges to the edge of the ring piece beyond the safety gap under the combined action of the attractive force of the ring piece and other related acting forces until the rim size of the photoresist on the edge of the wafer is reduced to the required degree.
Optionally, the step of spin coating the photoresist on the wafer by rotation of the spin coater includes:
controlling the spin coater to rotate at a low speed for a first designated time to coat and spread photoresist on a surface within the edge of the wafer;
and controlling the spin coating machine to gradually increase the rotating speed, so that the spread photoresist is uniformly coated on the whole surface of the wafer, and the photoresist on the edge of the wafer passes through the safety gap and continuously diverges towards the edge of the circular ring piece until the rim size of the photoresist on the edge of the wafer is reduced to the required degree.
Optionally, after reducing the rim size of the photoresist on the upper edge of the wafer to a required level, the method further comprises:
controlling the spin coating machine to rotate at a high speed for a second designated time, so that the surface of the photoresist is approximately solidified;
stopping the rotation of the spin coating machine, and removing the circular ring sheet.
Optionally, after removing the ring piece, the method further comprises:
controlling the spin coating machine to rotate again, and simultaneously removing the rim of the photoresist on the edge of the wafer by adopting a corresponding solvent;
stopping the rotation of the spin coating machine, and taking down the wafer.
Optionally, the material of the ring piece is the same as that of the wafer.
Optionally, the ring plate and the wafer have the same crystallographic orientation such that photoresist on the wafer edge is subject to opposite attractive forces from both the wafer and the ring plate.
Compared with the prior art, the technical scheme of the invention has at least one of the following beneficial effects:
1. the wafer is provided with the ring piece at the outer side, so that photoresist molecules at the edge of the wafer are attracted by wafer atoms near the edge of the wafer, the reverse direction attraction of the ring piece is increased, and a part of photoresist at the edge of the wafer is guided to the ring piece, thereby reducing the condition that the photoresist forms a rim on the edge of the wafer, greatly reducing the size of the rim formed by the photoresist on the edge of the wafer, and facilitating the removal of the rim.
2. The wafer ring and the wafer have the same crystallographic orientation, so that the photoresist near the edge of the wafer is basically consistent with the opposite attractive force of the wafer and the wafer ring, therefore, for the photoresist positioned at the edge of the wafer, besides being unbalanced by a small range of tiny attractive force at a safety gap, the rest places can reach balance, thereby greatly reducing the size of photoresist rims, ensuring that the using amount of photoresist removing solvent used for removing the rims later is more accurately controllable and kept stable, obviously reducing the influence of photoresist storage time and uncovering times on the using amount of photoresist removing solvent, greatly reducing the influence of photoresist removing solvent on the photoresist in an effective area of the wafer, greatly improving the stability and controllability of photoresist rim removing quality, and finally improving the yield of wafer photoresist coating.
3. The scheme is simple, easy to implement, compatible with the existing wafer gluing process and low in improvement cost.
Drawings
Those of ordinary skill in the art will appreciate that the figures are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention. Wherein:
fig. 1 is a schematic structural diagram of a conventional wafer glue device.
Fig. 2 is a schematic structural diagram of a wafer glue device according to an embodiment of the invention.
Fig. 3 is a flow chart of a wafer glue coating method according to an embodiment of the invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the invention. It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on, connected to, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" …, "directly connected to" another element or layer, there are no intervening elements or layers present. Although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention. Spatially relative terms, such as "under … …," "under," "lower," "over … …," "above," "upper," "top," "bottom," "front," "back," and the like, may be used herein for convenience of description to describe one element or feature as illustrated in the figures as connected to another element or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" … …, "under," "on the bottom surface," "on the back surface" would then be oriented "on" or "top" or "forward" other elements or features. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Referring to fig. 1, in order to remove the rim 30b formed on the edge of the wafer 20 by the photoresist 30, it is common practice to spray a certain amount of photoresist removing solvent (not shown), such as Ethylene Glycol Monomethyl Ether Acetate (EGMEA) or Acetone (ACE), from the edge of the wafer 20 (for example, from the bottom surface of the wafer edge) by using the nozzle 12a of the photoresist rim removing system 12 while the wafer 20 is rotated by the spindle 10a of the rotating machine 10, and a part of the photoresist removing solvent on the surface of the wafer 20 is thrown to the edge of the wafer 20 by centrifugal force, so as to dissolve and remove the rim 30b.
In the prior art, the use amount of the stripping solvent is controlled to ensure that: on the one hand, the rim 30b on the bottom and top surfaces of the edge of the wafer 20 can be removed, and on the other hand, the photoresist 30a in the effective area on the top surface of the wafer 20 cannot be damaged.
There is a difficulty in that the size of the rim 30b formed on the edge of the wafer 20 by the photoresist varies with the photoresist concentration according to the time of placing the photoresist and the number of times the device cover is opened. Thus, the amount of photoresist stripping solvent required varies, and the process stability is deteriorated, which affects the performance of the photoresist 30a in the effective area on the top surface of the wafer 20, and affects the yield.
Therefore, in order to reduce such an influence, it is necessary to reduce the rim 30b size of the photoresist as much as possible.
We analyze that the generation of photoresist rims 30b is due to the combined action of centrifugal force, surface tension, gravity, etc., and that the photoresist rims are always present on the upper and lower surfaces of the wafer edge regardless of whether the wafer diameter is increased or decreased, the root cause of which is analyzed by two different diameters Φ 1 And phi is 2 Is phi 2 >Φ 1 For example, relative to having a larger diameter Φ 2 For wafers having a smaller diameter phi 1 Has a missing portion at the wafer edge, which is a portion having a larger diameter phi 2 And have a smaller diameter phi 1 That is, with a larger diameter phi 2 Is smaller in diameter phi than a wafer having a smaller diameter phi 1 Is a ring region, thereby having a larger diameter phi 2 It is this annular region that acts to force a larger diameter Φ 2 Is not in diameter phi 1 Where occurs, but further extends to phi 2 Is located at the edge of (c). Conversely, with a smaller diameter Φ 1 Is of the diameter phi 1 The edge ring appears at the position just because the ring area is deleted, namely the ring area is correspondingly deleted for the phi 1 Attraction of molecules at the photoresist surface.
Based on the technical scheme, the wafer ring is additionally arranged on the outer side of the wafer to complement the missing part of the wafer with the relatively larger diameter at the edge of the wafer, so that for the photoresist positioned at the edge of the wafer, besides small-range tiny attractive force unbalance at the safety gap between the wafer ring and the wafer, the balance of the rest places can be achieved, thereby greatly reducing the size of the rim formed by the photoresist, ensuring that the quantity of the photoresist removing solvent sprayed in the subsequent rim removing process is kept basically stable, greatly improving the stability and controllability of the photoresist rim removing quality, and finally improving the wafer gluing yield.
The technical scheme provided by the invention is further described in detail below with reference to the attached drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
Referring to fig. 2, an embodiment of the present invention provides a wafer glue coating apparatus, which includes a rotary machine 10, a rotation control system 11, a photoresist edge ring removing system 12, a glue coating system 13, and a ring piece 14.
The rotary machine 10 is used for carrying a wafer 20 to be glued, and driving the wafer 20 to rotate in the process of coating photoresist 30. Alternatively, the wafer 20 to be glued is fixed on the spindle 10a of the rotary machine 10 and can rotate under the drive of the spindle of the rotary machine 10.
The rotation control system 11 is connected to the rotary machine 10 and is used for controlling the rotary machine 10 to rotate. Optionally, the rotation control system 11 is configured to: controlling the rotary machine 10 to rotate at a low speed for a first designated time when the wafer starts to be coated, so as to coat and spread the photoresist 30 onto the surface inside the edge of the wafer 20; and then, controlling the spin coater 10 to gradually increase the rotation speed, so that the spread photoresist 30 is uniformly coated on the whole surface of the wafer 20, and the photoresist 30b on the edge of the wafer 20 is continuously diffused towards the edge of the wafer 14 across the safety gap (the line width is g) between the wafer 20 and the wafer 14 until the size of the edge ring 30b of the photoresist 30 on the edge of the wafer 20 is reduced to the required degree. Further, the rotation control system 11 is further configured to: after the size of the rim 30b of the photoresist on the upper edge of the wafer 30 is reduced to a required degree, the spin coater 10 is controlled to rotate at a high speed for a second designated time, so that the surface of the photoresist 30 is near to be solidified; thereafter, the rotation of the spin coater station 10 is stopped.
The photoresist coating system 13 is used for coating a certain amount of photoresist on a corresponding photoresist coating portion of the wafer 20 (for example, on the center of the wafer 20) in the process of rotating the wafer 20 by the rotating machine 10, and by means of the low rotation speed of the wafer 20, the photoresist 30 is spread on the surface of the wafer 20 and is not thrown to the edge of the wafer 20 at one time.
The ring piece 14 is concentrically mounted outside the edge of the wafer 20, and a safety gap (line width g) is left between the ring piece and the edge of the wafer 20. Preferably, the thickness of the ring segment 14 is substantially the same as the thickness of the wafer 20.
The wafer glue spreading device of this embodiment further includes a clamp (not shown) for clamping and fixing the ring piece 14, and adjusting concentricity of the ring piece 14 and the wafer 20, so that a safety gap is ensured between the ring piece 14 and the wafer 20 under the condition of wafer rotation, and thus problems such as friction and hard collision do not occur. Further, the clamp may adjust the height of the top surface of the ring segment 14 such that the top surface of the ring segment 14 and the top surface of the wafer 20 remain substantially flush.
The photoresist bead removal system 12 is used to remove a bead 30b of photoresist 30 formed on the edge of the wafer 20. Alternatively, the photoresist bead removal system 12 may include a nozzle 12a for spraying a photoresist stripping solvent onto the edge of the wafer 20. The photoresist bead removal system 12 may spray a specified amount of photoresist stripping solvent from the bottom surface of the edge of the wafer 20 as the wafer rotates, and the photoresist stripping solvent is used in an amount just sufficient to cause the bead on the top surface and the bead on the bottom surface of the edge of the wafer to disappear without damaging the photoresist 30a in the active area of the wafer 20.
It should be understood that, compared with the existing wafer glue spreading device, the wafer glue spreading device of this embodiment only adds the ring piece 14 and the clamp for clamping the ring piece 14, and the thickness, material, width and other parameters of the ring piece 14 can be reasonably selected, so that the ring piece 14 is mainly ensured to be capable of generating corresponding attraction to the photoresist molecules on the edge of the wafer 20, and the attraction can be beneficial to reducing the size reduction of the rim formed on the edge of the wafer 20, which is not particularly limited in the invention.
Preferably, the ring plate 14 and the wafer 20 are not only made of the same material and have the same thickness, but also have the same crystallographic orientation, and at the same time, the inner diameter of the ring plate 14 is slightly larger than the outer diameter of the wafer 20, and the line width g of the safety gap between the wafer 20 and the ring plate 14 is as small as possible on the basis that the wafer 20 can be guaranteed not to contact and rub with the ring plate 14 when rotating, so that silicon atoms of the wafer 20 and the ring plate 14 can generate opposite attractive force to photoresist molecules on the edge of the wafer 20 in the same way, and thus, for photoresist positioned on the edge of the wafer 20, the photoresist can easily pass through the safety gap between the wafer 20 and the ring plate 14, spread on the ring plate 14, and balance can be achieved in all other places except for small-range tiny unbalanced attractive force at the safety gap between the wafer 20 and the ring plate 14, so that the uniformity of photoresist on the effective area and the edge area of the wafer 20 can be improved to the greatest extent.
Of course, in other embodiments of the present invention, when wafer 20 is of other materials (e.g., gallium arsenide, etc.) and crystallographic orientation, ring segment 14 may be adaptively replaced with a ring segment of the same material and crystallographic orientation as wafer 20.
It will be appreciated that the wafer glue applicator of the present invention may be, in one application, a glue applicator that is specific to a particular type of wafer (material, dimensions and crystallographic orientation are uniform), where there are multiple ring segments, the same type, i.e., the dimensions (e.g., inner diameter), material, crystallographic orientation, etc. of the ring segments are the same, and the purpose of providing multiple ring segments is to replace one ring segment when another ring segment is rejected. In another application, the wafer glue applicator of the present invention may be configured to be used with glue applicators provided for different types of wafers, and at least one of the material, the size, and the crystallographic orientation of the wafers may be different. The purpose of arranging a plurality of circular ring pieces of the same model is that when one circular ring piece of the model is scrapped, the circular ring piece of the same model can be replaced by another circular ring piece of the same model. The purpose of the ring piece setting of different models is the rubber coating demand of adaptation different models' wafer.
An embodiment of the present invention further provides a wafer glue spreading method, which may be implemented by using the wafer glue spreading device of the present invention, or may be implemented by further adding a corresponding ring piece to the existing wafer glue spreading device. Referring to fig. 2 and 3, the wafer glue coating method of the present embodiment includes the following steps:
s1, fixing a wafer 20 to be glued on a spin coating machine 10, wherein the wafer 20 is coaxial with and fixedly connected with a main shaft 10a of the spin coating machine 10, and therefore the rotation of the main shaft 10a of the spin coating machine 10 can drive the wafer 20 to rotate.
S2, fixedly mounting a ring piece 14 on the outer side of the edge of the wafer 20 in a concentric manner, and adjusting concentricity of the ring piece 14 and the wafer 20 so that a safety gap with a line width g is reserved between the ring piece 14 and the edge of the wafer 20, and further, hard collision between the ring piece and the wafer to be coated with photoresist can not occur in the subsequent wafer rotating process.
S3, starting the rotation control system 11, wherein the rotation control system 11 controls the spin coater 10 to rotate at a low speed and keep for a first designated time, so that the photoresist coating system 13 can coat a certain amount of photoresist 30 on a corresponding photoresist coating position on the wafer 20, and the photoresist 30 can be spread and coated on the surface of the wafer 20 by the low-speed rotation of the spin coater 10 without being thrown to the edge of the wafer 20 at one time, namely, the coated photoresist 30 is spread and coated on the surface inside the edge of the wafer 20.
S4, the rotation control system 11 controls the rotation speed of the spin coater 10 to gradually increase to a specified rotation speed, so that the spread photoresist 30 is uniformly coated on the whole surface of the wafer 20, at this time, the photoresist 30 is spread to the edge of the wafer 20, and a photoresist film layer with a certain thickness is formed on the surface of the wafer 20. After the photoresist 30 reaches the edge of the wafer 20, as a ring piece 14 is added to the outer edge of the wafer, the photoresist surface molecules which are originally unidirectionally attracted by atoms at the edge of the wafer 20 are further attracted by the force in the other direction generated by the same atoms of the ring piece 14, so that under the combined action of surface tension, gravity, centrifugal force and the attractive force of the wafer 20 and the ring piece 14, the photoresist 30 passes through the safety gap between the edge of the wafer 20 and the ring piece 14 and continuously diverges towards the periphery of the ring piece 14, the stress of the edge ring 30b of the photoresist on the edge of the wafer 20 is more balanced, and the size is greatly reduced. This process may be performed until the size of the rim 30b of the photoresist 30 on the edge of the wafer 20 is reduced to a desired level.
S5, the rotary control system 11 controls the rotary coating machine 10 to rotate at a high speed and keep the second designated time, so that the surface of the photoresist 30 is close to solidification, namely the photoresist 30 is shaped.
S6, the rotation control system 11 stops the rotation of the spin coating machine 10, and removes the ring piece 14.
S7, the rotary control system 11 controls the rotary coating machine 10 to rotate again according to the fixed rotating speed, the photoresist stripper ring system 12 sprays a specified amount of photoresist stripping solvent on the back surface of the edge of the wafer 20, and the photoresist stripping solvent is used in an amount just enough to enable the edge ring on the bottom surface and the edge ring on the top surface of the edge of the wafer 20 to disappear, but the photoresist 30a in the effective area of the wafer 20 is not damaged. The size of the rim 30b of the photoresist 30 is greatly reduced due to the effect of the previous annular sheet, so that the amount of the photoresist removing solvent used for removing the rim 30b in the step is reduced and more accurate and controllable compared with the prior art, and then the influence of the photoresist removing solvent on the photoresist 30a on the effective area of the wafer 20 is reduced, and the yield is improved.
S8, the rotation control system 11 stops the rotation of the spin coating machine 10, removes the wafer 20 with the rim 30b removed, and can then verify the quality of the photoresist 30a remaining on the wafer through a related test.
In summary, according to the wafer glue spreading device and the wafer glue spreading method of the present invention, the ring piece is disposed at the outer side of the wafer, so that the photoresist molecules at the edge of the wafer are attracted by the wafer atoms near the edge of the wafer, and the opposite direction of the ring piece is increased, so that a part of the photoresist on the edge of the wafer is guided to the ring piece, thereby reducing the condition that the photoresist forms a rim on the edge of the wafer, greatly reducing the size of the rim formed on the edge of the wafer by the photoresist, and facilitating the removal of the rim. The wafer ring sheet and the wafer have the same crystallographic orientation, so that the photoresist near the edge of the wafer is basically consistent with the opposite attractive force of the wafer and the wafer ring sheet, therefore, for the photoresist positioned at the edge of the wafer, besides being unbalanced by a small range of tiny attractive force at a safety gap, the rest places can reach balance, thereby greatly reducing the size of photoresist rims, ensuring that the using amount of photoresist removing solvent used for removing the rims later is more accurately controllable and kept stable, obviously reducing the influence of photoresist storage time and uncovering times on the using amount of photoresist removing solvent, greatly reducing the influence of photoresist removing solvent on the photoresist in an effective area of the wafer, greatly improving the stability and controllability of the rim removing quality of the photoresist, and finally improving the yield of wafer photoresist. The scheme is simple, easy to implement, compatible with the existing wafer gluing process and low in improvement cost.
The foregoing description is only illustrative of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention in any way, and any changes and modifications made by those skilled in the art in light of the foregoing disclosure will be deemed to fall within the scope and spirit of the present invention.
Claims (10)
1. The wafer gluing device is characterized by comprising:
the rotary machine is used for bearing the wafer to be glued and driving the wafer to rotate in the process of coating the photoresist;
the rotation control system is connected with the rotary machine table and used for controlling the rotation of the rotary machine table;
the ring piece is concentrically arranged outside the edge of the wafer, and a safety gap is reserved between the ring piece and the edge of the wafer;
and the gluing system is arranged at the corresponding position around the rotary machine table and is used for coating photoresist on the surface of the wafer.
2. The wafer glue applicator of claim 1, further comprising a clamp for clamping and securing the ring plate and adjusting concentricity of the ring plate and the wafer.
3. Wafer gumming device as claimed in claim 1 or 2, further comprising a photoresist bead removal system for removing a bead of photoresist formed on the wafer edge.
4. A wafer gumming device as set forth in claim 3, wherein said photoresist bead removal system includes a nozzle for spraying a photoresist stripper solution onto an edge of said wafer.
5. A wafer glue application method, comprising:
fixing a wafer to be glued on a spin coating machine, and concentrically mounting a ring piece outside the edge of the wafer, wherein a safety gap is reserved between the ring piece and the edge of the wafer;
and by controlling the rotation of the spin coating machine, photoresist is spin coated on the wafer, and the photoresist on the edge of the wafer continuously diverges to the edge of the ring piece beyond the safety gap under the combined action of the attractive force of the ring piece and other related acting forces until the rim size of the photoresist on the edge of the wafer is reduced to the required degree.
6. The wafer photoresist coating method according to claim 5, wherein the step of spin coating photoresist on the wafer by rotation of the spin coating machine comprises:
controlling the spin coater to rotate at a low speed for a first designated time, and coating and spreading photoresist on the surface of the wafer within the edge;
and controlling the spin coating machine to gradually increase the rotating speed, so that the spread photoresist is uniformly coated on the whole surface of the wafer, and the photoresist on the edge of the wafer passes through the safety gap and continuously diverges towards the edge of the circular ring piece until the rim size of the photoresist on the edge of the wafer is reduced to the required degree.
7. The wafer gumming method of claim 6, further comprising, after reducing a rim size of the photoresist at the upper edge of the wafer to a desired level:
controlling the spin coating machine to rotate at a high speed for a second designated time, so that the surface of the photoresist is approximately solidified;
stopping the rotation of the spin coating machine, and removing the circular ring sheet.
8. The wafer glue application method of claim 7, further comprising, after removing the ring piece:
controlling the spin coating machine to rotate again, and simultaneously removing the rim of the photoresist on the edge of the wafer by adopting a corresponding solvent;
stopping the rotation of the spin coating machine, and taking down the wafer.
9. Wafer glue spreading method according to any of the claims 5-8, wherein the ring piece is of the same material as the wafer.
10. Wafer gumming method as set forth in claim 9, wherein said ring piece has the same crystallographic orientation as said wafer such that photoresist on the edge of said wafer is subject to attractive forces from both said wafer and said ring piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211650985.3A CN116107169A (en) | 2022-12-21 | 2022-12-21 | Wafer gluing device and wafer gluing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211650985.3A CN116107169A (en) | 2022-12-21 | 2022-12-21 | Wafer gluing device and wafer gluing method |
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| CN116107169A true CN116107169A (en) | 2023-05-12 |
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| CN202211650985.3A Pending CN116107169A (en) | 2022-12-21 | 2022-12-21 | Wafer gluing device and wafer gluing method |
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- 2022-12-21 CN CN202211650985.3A patent/CN116107169A/en active Pending
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