CN116107156B - Mask etching equipment, method and system and computer readable storage medium - Google Patents
Mask etching equipment, method and system and computer readable storage medium Download PDFInfo
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- CN116107156B CN116107156B CN202310379779.1A CN202310379779A CN116107156B CN 116107156 B CN116107156 B CN 116107156B CN 202310379779 A CN202310379779 A CN 202310379779A CN 116107156 B CN116107156 B CN 116107156B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application discloses a mask etching device, a method, a system and a computer readable storage medium, wherein the mask etching device comprises a vacuum device, and the vacuum device comprises at least one channel hole; the vacuumizing device is arranged in the channel hole, and two sides of the vacuumizing device are respectively positioned at the inner side and the outer side of the vacuumizing device; the developing and etching device is arranged in the other channel hole of the vacuum device, wherein the vacuumizing device is used for extracting air in the vacuum device, and the developing and etching device is used for developing and etching an object to be etched, which is placed in the vacuum device. The sidewall angle of the etched mask chromium layer is reduced.
Description
Technical Field
The present disclosure relates to the field of manufacturing technology, and in particular, to a mask etching apparatus, a method, a system, and a computer readable storage medium.
Background
Wet etching is a technique in which etching materials are immersed in an etching solution to be etched. In short, the concept of chemical solution corrosion in the middle chemistry class is a pure chemical etching method, which has excellent selectivity, and the current film can be stopped after etching without damaging the film of other materials below. At present, the wet etching method is used for carrying out development and etching operations on the mask plate in an open environment with normal pressure, but the pressure on the surface of the mask plate in the development reaction process and the etching reaction process in the open environment with normal pressure is high, so that the side wall angle of a chromium layer of the mask plate after etching is large, and the etching effect is poor.
Disclosure of Invention
The main objective of the present application is to provide a mask etching apparatus, method, system and computer readable storage medium, which aims to solve the technical problem of how to reduce the sidewall angle of the chromium layer of the etched mask.
To achieve the above object, the present application provides a mask etching apparatus comprising:
a vacuum device comprising at least one passage hole;
the vacuumizing device is arranged in the channel hole, and two sides of the vacuumizing device are respectively positioned at the inner side and the outer side of the vacuumizing device;
the developing and etching device is arranged at the other channel hole of the vacuum device;
the vacuum device is used for extracting air in the vacuum device, and the developing and etching device is used for developing and etching an object to be etched, which is placed in the vacuum device.
Optionally, the developing and etching device comprises a developing device and an etching device, the other channel hole comprises a first channel hole and a second channel hole, the developing device is arranged on the vacuum device through the first channel hole, and the etching device is arranged on the vacuum device through the second channel hole.
Optionally, the mask etching apparatus further includes a developing temporary storage device, the developing temporary storage device is disposed on the outer side of the vacuum device, and a developer drain outlet is formed in the developing temporary storage device, the vacuum device further includes a developer temporary outlet, and the developer temporary outlet is communicated with the vacuum device and the developing temporary storage device, wherein the developer temporary outlet and the channel hole are not located at the same position.
Optionally, the mask etching apparatus further includes an etching temporary storage device, the etching temporary storage device is disposed on the outer side of the vacuum device, and an etching liquid drain outlet is formed in the etching temporary storage device, the vacuum device further includes an etching liquid temporary outlet, and the etching liquid temporary outlet is communicated with the vacuum device and the etching temporary storage device, wherein the etching liquid temporary outlet and the channel hole are not located at the same position.
Optionally, the mask etching apparatus further comprises at least one sensor disposed within the vacuum device to detect a pressure within the vacuum device.
Optionally, the mask etching apparatus further includes:
the supporting device is arranged in the vacuum device;
the rotating device is arranged in the vacuum device and connected with the supporting device to drive the supporting device to rotate.
In addition, to achieve the above object, the present application further provides a mask etching method, using the mask etching apparatus as described above, the mask etching method comprising:
receiving an etching start instruction input by a user, and acquiring a pressure value in the vacuum device;
and if the pressure value is larger than a preset pressure value, controlling the vacuumizing device to suck air in the vacuum device, stopping sucking the air in the vacuum device until the pressure value in the vacuum device is smaller than or equal to the preset pressure value, and controlling the developing and etching device to develop and etch the target object to be etched.
Optionally, the step of controlling the developing and etching device to develop and etch the target to be etched includes:
and controlling the developing device to develop the target object to be etched, and controlling the etching device to etch the developed target object after the development of the target object is completed.
In addition, to achieve the above object, there is also provided a mask etching system including a control system and a mask etching apparatus communicatively connected to the control system, the mask etching apparatus being configured as the mask etching apparatus as described above, the control system comprising: the device comprises a memory, a processor and a mask etching program which is stored in the memory and can run on the processor, wherein the mask etching program realizes the steps of the mask etching method when being executed by the processor.
In addition, to achieve the above object, the present application also provides a computer-readable storage medium having stored thereon a mask etching program which, when executed by a processor, implements the steps of the mask etching method as described above.
In the technical scheme of the application, through setting up a vacuum device in mask plate etching equipment and connecting evacuating device and development etching device respectively at the different access holes on the vacuum device to through evacuating device extraction air in the vacuum device, after making the pressure value in the vacuum device reach the pressure value of settlement, development etching device just develops and etches the operation to the target thing of sculpture such as mask etc. in the vacuum device, avoided developing and etching the mask in the open environment of ordinary pressure, the pressure that the mask surface received in the reaction process is directly correlated with ordinary pressure atmospheric pressure, generally great and unable change, the phenomenon emergence that the lateral wall angle of the mask chromium layer after leading to etching is big, this application is through evacuating device extraction air in the vacuum device, make the pressure in the vacuum device be less than ordinary pressure atmospheric pressure, development etching device develops and etches the operation to the mask under the environment of ordinary pressure atmospheric pressure, the pressure that the mask surface received reduces, thereby the lateral wall angle of mask chromium layer after etching has been reduced.
Drawings
The implementation, functional features and advantages of the present application will be further described with reference to the accompanying drawings in conjunction with the embodiments.
FIG. 1 is an illustrative schematic of an etching process;
FIG. 2 is a schematic diagram of an embodiment of a reticle etching apparatus of the present application;
FIG. 3 is a schematic diagram of the connection of the reticle etching apparatus of the present application to a control system;
FIG. 4 is a schematic flow chart of a first embodiment of a mask etching method of the present application;
fig. 5 is a schematic flow chart of a mask etching method of the present application.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Reference numerals illustrate:
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is correspondingly changed.
Furthermore, the descriptions of "first," "second," and the like, herein are for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be regarded as not exist and not within the protection scope of the present application.
Wet etching is a technique of immersing etching materials in an etching solution to perform etching, and is widely applied to manufacturing processes of integrated circuit processes, such as manufacturing of TFT (Thin Film Transistor ) array substrates, and generally, before the steps of developing and etching operations performed on automatic developing and etching equipment, exposure operations are performed on raw materials, and after the exposure is completed, developing and etching operations are performed on the exposed raw materials under an open atmosphere at normal pressure to complete etching of the raw materials. The mask plate is a mold formed by combining a metal layer film or a photoresist layer film with information such as patterns, characters and the like recorded on the surface and a glass carrier plate made of high-purity fused quartz or other materials, and is widely applied to industries such as ICs (Integrated Circuit, integrated circuits), FPDs (Flat Panel Display, flat panel displays), PCBs (Printed Circuit Boards ), MEMS (Micro Electro Mechanical Systems, micro-electro-mechanical systems) optical devices and the like, and can be formed by a photoresist layer, a Cr layer and a quartz glass layer.
The material may be exposed to light, developed, etched, and then released from the mold in a photolithography machine to form a desired line in the material. For example, referring to fig. 1, before starting the fabrication of an integrated circuit process, first, checking whether a raw material for fabricating the circuit has a defect, and placing the raw material on a carrier of a lithography machine after confirming that the raw material has no defect, wherein the raw material is a mask plate, and the mask plate comprises a photoresist 1 and a Cr layer 2; the quartz glass 3 is exposed on the photoetching machine, the chemical property of the photoresist (namely, the optical group) after exposure is changed to form an exposure area 4, then the developing and etching operation is carried out on the automatic developing and etching equipment, and finally the demoulding is carried out to form the needed circuit on the raw material.
The existing automatic developing and etching equipment generally adopts wet etching to perform developing and etching operations under normal pressure open environment, and the absolute pressure P1 suffered by the bottom of a container used for developing and etching in the open environment is related to the pressure P1' in the open environment and the height of liquid acting on the bottom of the container, and the main relations are as follows: p1=p1' +pgh, wherein: ρ is the density of the reaction solution (e.g., developer for development and etchant for etching, etc.)Degree, g is the weight constant, h is the height of the liquid at the bottom of the vessel. Absolute pressure P to which the reticle surface is subjected Mask for mask =ρgh+P Atmospheric air Wherein: p (P) Mask for mask P is the absolute pressure to which the reticle surface is subjected Atmospheric air The atmosphere pressure in the open environment is positive correlation between the absolute pressure on the surface of the mask plate and the atmospheric pressure, and is generally larger, the pressure of the developing solution acting on the surface of the mask plate on the exposed photoresist is larger, the pressure of the etching solution acting on the surface of the mask plate on the exposed Cr layer is also larger, the reaction speed of the etching solution on the side wall of the Cr layer is faster, the angle of the side wall of the chromium layer of the mask plate after etching is larger, and the wet etching effect is poor.
Based on the above phenomena, the present application first provides a mask etching apparatus, the structure of which is shown in fig. 2, and in one embodiment, the mask etching apparatus includes a vacuum device 9, where the vacuum device 9 includes at least one channel hole; the vacuumizing device 16 is arranged in the channel hole, and two sides of the vacuumizing device 16 are respectively positioned at the inner side and the outer side of the vacuum device 9; a developing and etching device provided in the other passage hole of the vacuum device 9; the vacuum pumping device 16 is used for pumping air in the vacuum device 9, and the developing and etching device is used for developing and etching an object to be etched, which is placed in the vacuum device.
In this embodiment, the vacuum device is arranged in the mask etching apparatus, and the vacuumizing device for vacuumizing the vacuum device and the developing and etching device for developing and etching the object to be etched placed in the vacuum device are arranged, so that the air in the vacuum device is vacuumized, the pressure in the vacuum device is smaller than the atmospheric pressure, the developing and etching device develops and etches the object such as a mask plate in the vacuum device with the pressure smaller than the atmospheric pressure, the pressure on the surface of the mask plate in the reaction process of developing and etching is reduced, and the sidewall angle of the chromium layer of the mask plate after etching is further reduced.
Preferably, still referring to fig. 2, the developing and etching device includes a developing device 7 and an etching device 8, the other passage hole includes a first passage hole through which the developing device 7 is disposed on the vacuum device 9, and a second passage hole through which the etching device 8 is disposed on the vacuum device 9.
As will be appreciated by those skilled in the art, the vacuum device 9 is a closed environment device, which is placed in a closed environment, in which the absolute pressure P experienced by the bottom of the container is related to the height of the liquid acting on the bottom of the container, and the main relationship is as follows: p=p '+pgh, the pressure P1' in the closed vessel is consistent with the atmospheric pressure P 'during the development etching operation not yet started, and when the development etching process is started, the pressure P' in the closed vessel is made smaller than the atmospheric pressure P1', i.e., p=p' +pgh is continuously reduced, i.e., the pressure acting on the bottom of the vessel is also reduced. At this time, the absolute pressure Pmask=ρgh+Pseal is applied to the surface of the mask, by reducing the pressure in the sealed container, the pressure of Pseal is smaller than the pressure of Patmosphere, and the pressure acting on the surface of the mask is reduced at this moment, so that along with the reduction of the pressure of the surface of the mask, the pressure of the developing solution acting on the surface of the mask on the exposed photoresist is reduced, the pressure of the etching solution acting on the surface of the mask on the exposed Cr layer is reduced, and the reaction speed of the etching solution on the side wall of the Cr layer is reduced, thereby improving the side wall angle. Meanwhile, as the absolute pressure on the surface of the mask plate is reduced, the impact of the solution on the photoresist and the side wall of the Cr layer is also reduced, the sharpness of the etched Cr layer is improved, the side wall angle of the Cr layer is reduced, and the pattern precision of the mask plate can be improved due to the reduction of the side wall angle of the etched Cr layer.
It should be understood by those skilled in the art that the developing device 7 and the etching device 8 should include necessary output mechanisms, such as one or more nozzles, etc., and that the developing device 7 may be disposed in the vacuum device through the first passage hole in such a manner that the output mechanism of the developing device is disposed in the vacuum device, and that the output mechanism of the developing device is disposed in the vacuum device in addition to the other portion of the output mechanism, that is, the output mechanism of the developing device is disposed in the vacuum device in addition to the other portion of the output mechanism, and that the output mechanism of the developing device is disposed in the vacuum device in addition to the other portion of the vacuum device.
In addition, the developing device may be further connected to a developing solution supply device for supplying a developing solution for the developing reaction process, the etching device may be further connected to an etching solution supply device for supplying an etching solution for the etching reaction process, wherein the developing solution supply device may be a developing solution storage tank such as a liquid pump, the etching solution supply device may be an etching solution storage tank such as a liquid pump, and the etching solution in the etching reaction process may be a liquid, a gas-liquid mixture, or the like, and the carrier gas and the etching solution may be mixed to obtain a gas-liquid mixture, wherein the carrier gas may be an inert protective gas. More specifically, the inert shielding gas is a gas that is not easy to react with the etching liquid or the target object under the etching environment, for example, nitrogen, inert gas, etc.
Preferentially, referring to fig. 2, the mask etching apparatus further includes a developing temporary storage device 12, the developing temporary storage device 12 is disposed outside the vacuum device 9, and a developer drain 15 is provided on the developing temporary storage device 12, the vacuum device 9 further includes a developer temporary discharge port 10, and the developer temporary discharge port 10 communicates with the vacuum device 9 and the developing temporary storage device 12, where the developer temporary discharge port 10 and the channel hole are not in the same position.
Preferentially, referring to fig. 2, the mask etching apparatus further includes an etching temporary storage device 13, the etching temporary storage device 13 is disposed outside the vacuum device 9, and an etching liquid drain 14 is provided on the etching temporary storage device 13, the vacuum device 9 further includes an etching liquid temporary discharge port 11, and the etching liquid temporary discharge port 11 communicates with the vacuum device 9 and the etching temporary storage device 13, where the etching liquid temporary discharge port 11 and the channel hole are not located at the same position.
It should be noted that, with reference to fig. 2, the development temporary storage device and the etching temporary storage device are preferably disposed at different positions outside the vacuum apparatus, the development temporary storage device is preferably disposed at the right outside of the vacuum apparatus, the etching temporary storage device is disposed at the left outside of the vacuum apparatus, the natural developer temporary discharge port and the etchant temporary discharge port are also preferably disposed at different positions of the vacuum apparatus, the developer temporary discharge port is preferably disposed at the right side of the vacuum apparatus, and the etchant temporary discharge port is disposed at the left side of the vacuum apparatus. Further, during the development reaction, the temporary developer discharge opening 10 is opened, the developer drain opening 15, the temporary etchant discharge opening 11 and the etchant drain opening 14 are closed, after the development reaction, the temporary developer discharge opening 10 is closed, the temporary etchant discharge opening 11 is opened to start the etching reaction, after the etching reaction, the temporary etchant discharge opening 11 is closed, and the developer drain opening 15 and the etchant drain opening 14 are opened to discharge the developer waste liquid generated during the development reaction and the etching waste liquid generated during the etching reaction.
Preferably, referring to fig. 2, the mask layout etching apparatus further comprises at least one sensor 17, said sensor 17 being arranged in said vacuum device 9 to detect the pressure in said vacuum device 9.
Further, the sensor 17 may be a pressure sensor, and is configured to detect a pressure in the vacuum apparatus 9, so as to control the vacuum-pumping apparatus 16 to accurately pump air in the vacuum apparatus, so that a pressure value in the vacuum apparatus 9 reaches a set pressure value, and the developing and etching apparatus is controlled by the pressure sensor to make the vacuum apparatus reach a negative pressure to a certain extent, and when the negative pressure reaches the set negative pressure range, the vacuum-pumping apparatus 16 is controlled to stop pumping, and subsequent processes such as developing and etching begin to be performed.
Preferably, referring to fig. 2, the mask layout etching apparatus further includes: a support device 5 disposed in the vacuum device 9; the rotating device 6 is arranged in the vacuum device 9 and connected with the supporting device 5 to drive the supporting device 5 to rotate.
The supporting device 5 is used for bearing the target in the etching process, and the rotating device 6 is used for driving the supporting device 5 to rotate so as to drive the target to rotate. In the embodiment of the present invention, the rotating device 6 may drive the supporting device 5 at a low speed by using a rotating motor to drive the target object to rotate at a constant speed or at a uniform speed, so that the portions to be etched on the target object can be moved below the gas-liquid spraying device for development and etching, so that the development and etching degree is uniform, and simultaneously, the etching solution on the target object can be thrown out in time, thereby preventing overetching.
Preferably, referring to fig. 2, the mask layout etching apparatus may further include an air inlet 18; the air inlet 18 is connected to the vacuum device 9 for supplying air to the vacuum device 9.
After development and etching are completed, the air inlet 18 may be opened, so that air enters the vacuum device through the air inlet 18, and the pressure of the vacuum device is restored to the atmospheric pressure at normal pressure.
In addition, the mask etching equipment can be further provided with a cleaning device connected with the vacuum device, and an output mechanism of the cleaning device is arranged in the vacuum device and used for spraying cleaning liquid to the surface to be etched of the target object in set time, wherein the cleaning liquid is purified water, distilled water or other liquid with a cleaning function. The set time refers to the time when the etching is completed, or the etching operation is stopped, or other time when the target object needs to be cleaned. In a specific embodiment, after the etching process is finished, the cleaning device is immediately opened, and pure water is sprayed to a target object by the cleaning device to clean the target object, so that accurate etching time is ensured; the pure water spraying pressure can be adjusted between 0.01 and 0.1 MPa, and the rotating speed of the rotating device can be adjusted between 1 and 10r/min during pure water spraying, so that the cleaning is ensured to be rapid and uniform. In another scenario, a temperature control mechanism may also be provided for controlling the temperature of the developer and the etchant.
In some embodiments of the present application, the mask etching apparatus may further be provided with a distance adjusting mechanism for adjusting a distance between the nozzles of the developing device and the etching device and the target object. Specifically, the distance adjusting mechanism may be a lifting mechanism provided on the supporting device, or a lifting mechanism provided on the developing device and the etching device. The distance between the nozzle and the substrate is adjusted, so that the optimal utilization of the reaction liquid can be realized, and the spray uniformity can be improved to the greatest extent. The adjustment of the spray distance can be determined by mounting a pressure detector on the test mask, for example: and installing a plurality of pressure sensors at random positions on the mask plate, continuously changing spraying distance during spraying, and selecting the spraying distance when the monitoring values of the plurality of pressure sensors are closest to each other as the optimal distance under the spraying condition.
In addition, referring to fig. 3, the mask etching apparatus in this embodiment may be communicatively connected to a control system, in which a vacuum environment is provided for a developing and etching device for developing and etching reactions, and a vacuum device, a vacuum-pumping device, a sensor, a developing device, an etching device developer temporary storage device, an etching solution temporary storage device, a rotating device, an air inlet, and the like in the mask etching apparatus may be respectively communicatively connected to the control system. Before the development etching operation, the development etching device is controlled by the control system to enable the vacuum system to achieve negative pressure to a certain extent under the control of the sensor, and when the negative pressure reaches a set negative pressure range, the control system controls the vacuumizing device to stop vacuumizing the vacuum device. The subsequent steps such as development and etching are started.
In the developing operation process, the control system controls the temporary discharging opening of the developing solution to be in an open state, the developing solution in the reaction process is temporarily stored through the temporary developing solution storage device, the developing process is finished, and the control system controls the temporary discharging opening of the developing solution to be in a closed state; similarly, in the etching operation process, the control system controls the temporary etching liquid discharge opening to be in an open state, etching liquid in the reaction process is temporarily stored through the etching temporary storage device, the etching process is finished, and the control system controls the temporary etching liquid discharge opening to be in a closed state; and after the whole process is finished, the airtight vacuum device returns to normal pressure through the air inlet, and the waste developing solution and the etching solution are respectively discharged through the waste discharge pipeline.
Referring to fig. 4, the present application further provides a mask etching method, in which the mask etching apparatus provided in any one of the embodiments of the present application is used to etch a target object, as a first embodiment of the mask etching method of the present application, the mask etching method includes the following steps:
step S10, receiving an etching start instruction input by a user, and acquiring a pressure value in the vacuum device;
firstly, the mask etching equipment provided by any one embodiment of the application can be in communication connection with a control system, data communication can be carried out between the control system and the mask etching equipment, and the control system can control the mask etching equipment in a command mode. It should be noted that, the mask etching device or the control system may also provide an interactive interface for interacting with the user, where the interactive interface may provide a corresponding button to form a corresponding instruction, and after the corresponding instruction reaches the control system, the control system receives the instruction input by the user, and then controls the mask etching device to perform a corresponding operation, so as to implement a corresponding function. For example, the interactive interface may provide an etching button, and the implemented function is to complete development and etching of the target object to be etched, when the user clicks the button, the control system will receive an etching start instruction, and after receiving the etching start instruction, the control system may acquire, through a sensor in the mask etching apparatus, a pressure value in a vacuum device in the mask etching apparatus, that is, the sensor may be in communication connection with the control system, and upload the detected pressure value to the control system.
It should be noted that, in this example, the main process of development and etching is placed in a closed vacuum device capable of implementing evacuation, in the process that the development etching operation has not yet started, the pressure P1 'in the closed vacuum device is consistent with the atmospheric pressure P', and when the development etching process is started, the pressure P 'in the vacuum device is made to be smaller than the atmospheric pressure P1', i.e., p=p '+pgh is continuously reduced by reducing the pressure P' in the vacuum device, where ρ is the density of the reaction solution, g is the gravity constant, h is the height of the liquid at the bottom of the container, i.e., this example can provide a negative pressure environment in the vacuum device.
And step S20, if the pressure value is larger than a preset pressure value, controlling the vacuumizing device to suck air in the vacuum device, stopping sucking air in the vacuum device until the pressure value in the vacuum device is smaller than or equal to the preset pressure value, and controlling the developing and etching device to develop and etch the target object to be etched.
After an etching start instruction input by a user is received, a pressure value in a vacuum device in the mask etching equipment can be obtained through a sensor in the vacuum device, if the pressure value in the vacuum device is larger than a preset pressure value, the vacuum device can be controlled to extract air in the vacuum device until the pressure value in the vacuum device is smaller than or equal to the preset pressure value, then the air in the vacuum device is stopped, and the subsequent processes such as development and etching are started.
It should be noted that, the preset pressure value may be a negative pressure range set in advance by a user based on an actual situation, the pressure value in the vacuum device may be compared with an upper limit value of the negative pressure range, if the pressure value in the vacuum device is greater than the upper limit value of the negative pressure range, that is, it is determined that the pressure value is greater than the preset pressure value, the pressure value in the vacuum device is not in the preset negative pressure range, otherwise, it is determined that the pressure value is less than or equal to the preset pressure value, the pressure value in the vacuum device is in the preset negative pressure range, if the pressure value in the vacuum device is in the preset negative pressure range, the control system may control the developing and etching device in the vacuum device to develop and etch the target object to be etched, where the target object to be etched may be a mask after exposure, and the mask may sequentially include, a photoresist layer, a Cr layer and a quartz glass layer from top to bottom, and the chemical property of the photoresist (i.e., a photo set) of the mask after exposure is changed, so as to form an exposure area, so as to prepare for the subsequent developing and etching operation.
In addition, to assist understanding of the wet process flow in this embodiment, the following description is given by way of example.
Referring to fig. 5, firstly, if a user inputs an etching start instruction at a corresponding interactive interface, a control system receives the etching start instruction input by the user, acquires a pressure value in a vacuum device through a sensor, judges whether the acquired pressure value in the vacuum device is larger than a preset pressure value, if not, controls a developing device to develop a target to be etched, controls an etching device to etch the developed target after the development is completed, and can open an air inlet connected with the vacuum device after the etching is completed, so that a developing solution drain and an etching solution drain are opened after the vacuum device reaches normal pressure, and flow is ended after developing waste liquid and etching waste liquid are discharged; if so, controlling the vacuumizing device to suck air in the vacuumizing device until the pressure value in the vacuumizing device obtained by the sensor is smaller than or equal to a preset pressure value, stopping vacuumizing the vacuumizing device, and continuously executing the step of controlling the developing device to develop the target to be etched.
In this embodiment, the vacuum device is used to pump air in the vacuum device, so that the pressure in the vacuum device of the closed container is reduced, compared with the pressure of the atmosphere, the pressure acting on the surface of the mask is reduced, so that as the pressure on the surface of the mask is reduced, the pressure of the developing solution acting on the surface of the mask on the exposed photoresist is reduced, the pressure of the etching solution acting on the surface of the mask on the exposed Cr layer is reduced, and the reaction speed of the etching solution on the side wall of the Cr layer is reduced, thereby realizing the improvement of the side wall angle. The sidewall angle is the sharpness of the chromium layer measured after etching using AFM (Atomic Force Microscope ) or CD-SEM (length measuring scanning electron microscope). Meanwhile, as the absolute pressure on the surface of the mask plate is reduced, the impact of the solution on the photoresist and the side wall of the Cr layer is also reduced, the sharpness of the etched Cr layer is improved, the side wall angle of the Cr layer is reduced, and the pattern precision of the mask plate can be improved due to the reduction of the side wall angle of the etched Cr layer.
In an embodiment, the step of controlling the developing and etching device to develop and etch the target to be etched includes:
and a step a of controlling the developing device to develop the target object to be etched, and controlling the etching device to etch the developed target object after the development of the target object is completed.
In this example, after the pressure in the vacuum device in the mask etching apparatus reaches the set negative pressure range, the subsequent processes such as development and etching begin to be performed, so that the development device and the etching device can be controlled to sequentially develop and etch the etched target object, and then the etching of the target object is completed.
In addition, in the developing operation process, the control system controls the temporary discharging opening of the developing solution to be in an open state, the developing solution in the reaction process is temporarily stored through the temporary storing device of the developing solution, the developing process is finished, and the control system controls the temporary discharging opening of the developing solution to be in a closed state; similarly, in the etching operation process, the control system controls the temporary etching liquid discharge opening to be in an open state, etching liquid in the reaction process is temporarily stored through the etching temporary storage device, the etching process is finished, and the control system controls the temporary etching liquid discharge opening to be in a closed state; and after the whole process is finished, the sealing device returns to normal pressure through the air inlet, and the waste developing solution and the etching solution are respectively discharged through the waste discharge pipeline.
In addition, the rotating device can be driven to rotate at a low speed by controlling the rotating motor, so that etching liquid on the target object can be thrown out in time, and excessive etching is prevented.
In addition, if the mask etching device comprises a cleaning device, a user can set the control system according to actual needs to control the cleaning device to spray cleaning liquid to the target object on the supporting device at set time, wherein the cleaning liquid is purified water, distilled water or other liquid with cleaning effect. The set time refers to the time when the etching is completed, or the etching operation is stopped, or other time when the target is required to be cleaned. In one embodiment, after the etching process is completed, the cleaning device is immediately opened, and purified water is sprayed to the target object by the cleaning device to clean the target object, so that accurate etching time is ensured; and the pure water spray pressure and the rotation speed of the rotating device during pure water spray can be adjusted according to actual conditions, so that the cleaning is fast and uniform.
In addition, the application also provides a mask etching system, the mask etching system comprises a control system and a mask etching device, the mask etching device is in communication connection with the control system, the mask etching device is configured as the mask etching device in any embodiment of the application, and the control system comprises: the device comprises a memory, a processor and a mask etching program which is stored in the memory and can run on the processor, wherein the mask etching program realizes the steps of the mask etching method when being executed by the processor.
In addition, the application further provides a computer readable storage medium, wherein the storage medium stores a mask etching program, and the mask etching program realizes the steps of the mask etching method when being executed by a processor.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The foregoing embodiment numbers of the present application are merely for describing, and do not represent advantages or disadvantages of the embodiments.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) as described above, including several instructions for causing a terminal device (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method described in the embodiments of the present application.
The foregoing description is only of the preferred embodiments of the present application, and is not intended to limit the scope of the claims, and all equivalent structures or equivalent processes using the descriptions and drawings of the present application, or direct or indirect application in other related technical fields are included in the scope of the claims of the present application.
Claims (9)
1. A mask etching apparatus, characterized in that the mask etching apparatus comprises:
a vacuum device comprising at least one passage hole;
the vacuumizing device is arranged in the channel hole, and two sides of the vacuumizing device are respectively positioned at the inner side and the outer side of the vacuumizing device;
the developing and etching device is arranged at the other channel hole of the vacuum device;
the vacuum device is used for extracting air in the vacuum device so that the pressure in the vacuum device is smaller than the atmospheric pressure, and the developing and etching device develops and etches a target object to be etched in the vacuum device smaller than the atmospheric pressure;
the developing and etching device comprises a developing device and an etching device, the other passage hole comprises a first passage hole and a second passage hole, the developing device is arranged on the vacuum device through the first passage hole, the etching device is arranged on the vacuum device through the second passage hole, the developing device is connected with a developing solution providing device for providing developing solution for a developing reaction process, and the etching device is connected with an etching solution providing device for providing etching solution for the etching reaction process.
2. The mask etching apparatus according to claim 1, further comprising a development temporary storage device, the development temporary storage device being disposed outside the vacuum device, and a development liquid drain being provided on the development temporary storage device, the vacuum device further comprising a development liquid temporary discharge port, the development liquid temporary discharge port communicating the vacuum device and the development temporary storage device, wherein the development liquid temporary discharge port and the passage hole are not in the same position.
3. The mask etching apparatus according to claim 1, further comprising an etching temporary storage device, the etching temporary storage device being disposed outside the vacuum device, and an etching liquid drain being provided on the etching temporary storage device, the vacuum device further comprising an etching liquid temporary discharge port, the etching liquid temporary discharge port communicating the vacuum device and the etching temporary storage device, wherein the etching liquid temporary discharge port and the passage hole are not in the same position.
4. The mask etching apparatus of claim 1, further comprising at least one sensor disposed within the vacuum device to detect a pressure within the vacuum device.
5. The mask etching apparatus according to claim 1, wherein the mask etching apparatus further comprises:
the supporting device is arranged in the vacuum device;
the rotating device is arranged in the vacuum device and connected with the supporting device to drive the supporting device to rotate.
6. A mask etching method, characterized in that the mask etching method is applied to the mask etching apparatus according to any one of claims 1 to 5, the mask etching method comprising:
receiving an etching start instruction input by a user, and acquiring a pressure value in the vacuum device;
and if the pressure value is larger than a preset pressure value, controlling the vacuumizing device to suck air in the vacuum device, stopping sucking the air in the vacuum device until the pressure value in the vacuum device is smaller than or equal to the preset pressure value, and controlling the developing and etching device to develop and etch the target object to be etched.
7. The mask etching method according to claim 6, wherein the step of controlling the developing and etching device to develop and etch the target to be etched includes:
and controlling a developing device in the developing and etching device to develop the target object to be etched, and controlling an etching device in the developing and etching device to etch the developed target object after the development of the target object is completed.
8. A mask etching system comprising a control system in communication with a mask etching apparatus configured as the mask etching apparatus of any one of claims 1-5, the control system comprising: memory, a processor and a mask etching program stored on the memory and executable on the processor, which when executed by the processor, implements the steps of the mask etching method according to any one of claims 6 to 7.
9. A computer-readable storage medium, characterized in that the storage medium has stored thereon a mask etching program which, when executed by a processor, implements the steps of the mask etching method according to any one of claims 6 to 7.
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| CN202310379779.1A CN116107156B (en) | 2023-04-11 | 2023-04-11 | Mask etching equipment, method and system and computer readable storage medium |
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| CN202310379779.1A CN116107156B (en) | 2023-04-11 | 2023-04-11 | Mask etching equipment, method and system and computer readable storage medium |
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| CN116107156B true CN116107156B (en) | 2023-06-23 |
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| CN116107156A (en) | 2023-05-12 |
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