CN116107008A - Integrated polarization detection grating structure in infrared detection chip - Google Patents
Integrated polarization detection grating structure in infrared detection chip Download PDFInfo
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- CN116107008A CN116107008A CN202211685532.4A CN202211685532A CN116107008A CN 116107008 A CN116107008 A CN 116107008A CN 202211685532 A CN202211685532 A CN 202211685532A CN 116107008 A CN116107008 A CN 116107008A
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- 238000001514 detection method Methods 0.000 title claims abstract description 40
- 230000010287 polarization Effects 0.000 title claims abstract description 39
- 238000010521 absorption reaction Methods 0.000 claims abstract description 20
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
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Abstract
The invention discloses an integrated polarization detection grating structure in an infrared detection chip, which comprises an absorption layer, wherein a plurality of pixels are arranged on the absorption layer, each pixel is covered with a linear polarization grating unit, each linear polarization grating unit comprises a main grating block and a plurality of auxiliary grating blocks, the auxiliary grating blocks surround the periphery of the main grating block, each auxiliary grating block is provided with a plurality of linear gratings which are uniformly and parallelly arranged, different auxiliary grating blocks in the same linear polarization grating unit are provided with linear gratings with different angles, the main grating block is provided with a plurality of annular gratings which are uniformly and alternately arranged, and all the annular gratings on the main grating block are concentrically arranged. The integrated polarization detection grating structure in the infrared detection chip improves the effective absorption area of the absorption layer and the optical response rate and polarization sensitivity of the infrared detection chip.
Description
Technical Field
The invention belongs to the technical field of grating structures, and particularly relates to an integrated polarization detection grating structure in an infrared detection chip.
Background
Infrared detectors have been widely used, and in recent years, higher requirements are put on the detection and identification capabilities of the infrared detectors, so that innovation and development of the infrared detectors are urgently required. Along with the rapid progress of the microelectronic process, the integration of chips with multiple functions on the infrared detector becomes possible, and a foundation is provided for innovation of the infrared detector. In the existing quantum well infrared detection chip (qwi p) manufacturing technology, two-dimensional grating is the mainstream technology applied by most manufacturers, two-dimensional grating coupling is the most widely used coupling mode at present, and gratings are periodically repeated in two perpendicular directions on the surface of a detector. However, due to the inherent characteristic of two-dimensional grating coupling, the grating has selectivity to detection wavelength, so that the performance of broadband detection and multi-color detection of the infrared detector is restricted. The inventor discloses a linear polarization grating structure applied to an infrared detection chip in the patent with the application number of CN201821426985.4, and particularly discloses a grating structure of a linear grating with different angles of different grating blocks in the same linear polarization grating unit. However, the structure has a certain limitation in light absorption, for example, when the incident light has a certain angle, only one grating block in each linear polarization grating unit can fully play a role, and the rest grating blocks have small roles. Only 25% of the whole absorption layer can absorb light, most of the absorption layer cannot play a role, and the optical response rate and polarization sensitivity of the absorption layer are limited. Therefore, in order to further improve the optical response rate and polarization sensitivity of the infrared detection chip, further improvements on the grating structure are necessary.
Disclosure of Invention
In order to solve the technical problems, the invention adopts the following technical scheme: the integrated polarization detection grating structure in the infrared detection chip comprises an absorption layer, a plurality of pixels are arranged on the absorption layer, each pixel is covered with a linear polarization grating unit, each linear polarization grating unit comprises a main grating block and a plurality of auxiliary grating blocks, the auxiliary grating blocks surround the periphery of the main grating block, each auxiliary grating block is provided with a plurality of linear gratings which are uniformly and parallelly arranged, different auxiliary grating blocks in the same linear polarization grating unit are provided with linear gratings with different angles, the main grating block is provided with a plurality of annular gratings which are uniformly arranged at intervals, and all the annular gratings on the main grating block are concentrically arranged.
As the optimization of the technical scheme, the infrared detection chip is a II-type superlattice infrared detection chip.
As the optimization of the technical scheme, each linear polarization grating unit comprises four sub grating blocks with the same size, the sub grating blocks are equal to the main grating blocks in size, each main grating block comprises four vertical edges which are sequentially connected, and the four sub grating blocks are respectively connected with one vertical edge of each main grating block.
As the optimization of the technical scheme, each linear polarization grating unit comprises a first auxiliary grating block, a second auxiliary grating block, a third auxiliary grating block and a fourth auxiliary grating block, wherein the first auxiliary grating block, the second auxiliary grating block, the third auxiliary grating block and the fourth auxiliary grating block are respectively positioned at the upper side, the lower side, the left side and the right side of the main grating block, an included angle of 45 degrees is formed between the linear grating on the second auxiliary grating block and the linear grating on the first auxiliary grating block, an included angle of 45 degrees is formed between the linear grating on the third auxiliary grating block and the linear grating on the second auxiliary grating block, an included angle of 45 degrees is formed between the linear grating on the fourth auxiliary grating block and the linear grating on the third auxiliary grating block, and an included angle of 90 degrees is formed between the linear grating on the first auxiliary grating block and the linear grating on the third auxiliary grating block.
As a preferable aspect of the above-described aspect, two sub-grating blocks are shared by adjacent linear polarization grating units.
The beneficial effects of the invention are as follows: the integrated polarization detection grating structure in the infrared detection chip improves the effective absorption area of the absorption layer and the optical response rate and polarization sensitivity of the infrared detection chip.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
As shown in fig. 1, an integrated polarization detection grating structure in an infrared detection chip comprises an absorption layer, a plurality of pixels are arranged on the absorption layer, each pixel is covered with a linear polarization grating unit, each linear polarization grating unit comprises a main grating block 1 and a plurality of auxiliary grating blocks, the auxiliary grating blocks surround the periphery of the main grating block 1, each auxiliary grating block is provided with a plurality of linear gratings 3 which are uniformly and parallelly arranged, different auxiliary grating blocks in the same linear polarization grating unit are provided with linear gratings 3 with different angles, a plurality of annular gratings 4 which are uniformly arranged at intervals are arranged on the main grating block 1, and all the annular gratings 4 on the main grating block 1 are concentrically arranged. The annular grating 4 on the main grating block 1 can absorb light at any angle, and the linear grating 3 designed for absorbing light at a specific angle on the auxiliary grating block is assisted, so that the overall optical response rate and polarization sensitivity of the device are improved.
Further, the infrared detection chip is a II-type superlattice infrared detection chip.
Further, each linear polarization grating unit comprises four sub grating blocks with the same size, the sub grating blocks are equal to the main grating block 1 in size, the main grating block 1 comprises four vertical sides 5 which are sequentially connected, and the four sub grating blocks are respectively connected with one vertical side 5 of the main grating block 1.
Further, each linear polarization grating unit includes a first sub grating block 6, a second sub grating block 7, a third sub grating block 8, and a fourth sub grating block 9, where the first sub grating block 6, the second sub grating block 7, the third sub grating block 8, and the fourth sub grating block 9 are located at the upper side, the lower side, the left side, and the right side of the main grating block 1, respectively, an included angle of 45 degrees is formed between the linear grating 3 on the second sub grating block 7 and the linear grating 3 on the first sub grating block 6, an included angle of 45 degrees is formed between the linear grating 3 on the third sub grating block 8 and the linear grating 3 on the second sub grating block 7, an included angle of 45 degrees is formed between the linear grating 3 on the fourth sub grating block 9 and the linear grating 3 on the third sub grating block 8, an included angle of 90 degrees is formed between the linear grating 3 on the first sub grating block 6 and the linear grating 3 on the third sub grating block 8, and an included angle of 90 degrees is formed between the linear grating 3 on the second sub grating block 7 and the linear grating 3 on the fourth sub grating block 9. The four sub-grating blocks are respectively aimed at incident light with a specific angle, so that the absorption capacity of the absorption layer on the light with the specific angle is improved.
Further, two sub-grating blocks are shared by adjacent linear polarization grating units. Therefore, the light effective rate of the absorption area can be improved after the absorption area is subjected to illumination in any direction, the effective area of the absorption area can be improved, and the overall sensitivity can be improved.
It should be noted that other technical features such as the structure of the infrared detection chip related to the present invention application should be considered as the prior art, and the specific structure, the working principle, and the control manner and the spatial arrangement of the technical features may be selected conventionally in the art, which should not be considered as the point of the invention of the present invention patent, and the present invention is not further specifically developed and detailed.
While the preferred embodiments of the present invention have been described in detail, it should be appreciated that numerous modifications and variations may be made in accordance with the principles of the present invention by those skilled in the art without undue burden, and thus, all technical solutions which may be obtained by logic analysis, reasoning or limited experimentation based on the principles of the present invention as defined by the claims are within the scope of protection as defined by the present invention.
Claims (5)
1. The integrated polarization detection grating structure in the infrared detection chip is characterized in that the infrared detection chip comprises an absorption layer, a plurality of pixels are arranged on the absorption layer, each pixel is covered with a linear polarization grating unit, each linear polarization grating unit comprises a main grating block and a plurality of auxiliary grating blocks, the auxiliary grating blocks surround the periphery of the main grating block, each auxiliary grating block is provided with a plurality of linear gratings which are uniformly and parallelly arranged, different auxiliary grating blocks in the same linear polarization grating unit are provided with linear gratings with different angles, the main grating block is provided with a plurality of annular gratings which are uniformly arranged at intervals, and all the annular gratings on the main grating block are concentrically arranged.
2. The integrated polarization-detecting grating structure in an infrared detection chip of claim 1, wherein the infrared detection chip is a type II superlattice infrared detection chip.
3. The integrated polarization-detecting grating structure in an infrared detection chip as recited in claim 2, wherein each of said linear polarization grating units comprises four sub-grating blocks of equal size, said sub-grating blocks being equal in size to the main grating block, said main grating block comprising four vertical sides connected in sequence, said four sub-grating blocks being connected to one vertical side of the main grating block, respectively.
4. The integrated polarization detection grating structure in the infrared detection chip according to claim 3, wherein each linear polarization grating unit comprises a first sub-grating block, a second sub-grating block, a third sub-grating block and a fourth sub-grating block, the first sub-grating block, the second sub-grating block, the third sub-grating block and the fourth sub-grating block are respectively located at the upper side, the lower side, the left side and the right side of the main grating block, an included angle of 45 degrees is formed between the linear grating on the second sub-grating block and the linear grating on the first sub-grating block, an included angle of 45 degrees is formed between the linear grating on the third sub-grating block and the linear grating on the second sub-grating block, an included angle of 45 degrees is formed between the linear grating on the fourth sub-grating block and the linear grating on the third sub-grating block, and an included angle of 90 degrees is formed between the linear grating on the first sub-grating block and the linear grating on the fourth sub-grating block.
5. The integrated polarization-detecting grating structure in an infrared detection chip as recited in claim 4, wherein adjacent ones of said linear polarization grating units share two sub-grating blocks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211685532.4A CN116107008A (en) | 2022-12-27 | 2022-12-27 | Integrated polarization detection grating structure in infrared detection chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211685532.4A CN116107008A (en) | 2022-12-27 | 2022-12-27 | Integrated polarization detection grating structure in infrared detection chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116107008A true CN116107008A (en) | 2023-05-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211685532.4A Pending CN116107008A (en) | 2022-12-27 | 2022-12-27 | Integrated polarization detection grating structure in infrared detection chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116107008A (en) |
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2022
- 2022-12-27 CN CN202211685532.4A patent/CN116107008A/en active Pending
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