CN110854145A - Pixel structure, image sensor and terminal - Google Patents
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Abstract
The embodiment of the application discloses a pixel structure, an image sensor and a terminal, wherein the pixel structure comprises at least two sub-pixel structures, each sub-pixel structure comprises a first polarization photoelectric conversion unit and a second polarization photoelectric conversion unit which are stacked, the first polarization photoelectric conversion unit at a shallow position (namely, a position close to an optical filter) absorbs polarized light signals of a first specific waveband by utilizing the corresponding relation between the wavelength and the penetration depth, and the second polarization photoelectric conversion unit at a deep position (namely, a position far away from the optical filter) absorbs polarized light signals of a second specific waveband. Therefore, the single pixel structure can absorb the polarized light signals of two specific wave bands, and the utilization rate of the polarized light signals is improved; the polarized photoelectric conversion unit is ensured to have higher quantum efficiency by adjusting the size of the photosensitive area, and the absorption rate of polarized light signals is improved.
Description
Technical Field
The present application relates to image technologies, and in particular, to a pixel structure, an image sensor, and a terminal.
Background
FIG. 1 is a schematic diagram of a pixel array of a conventional polarized image sensor; as shown in fig. 1, the conventional polarized image sensor includes a Photodiode (PD) array at a bottom layer, a polarizer array at a middle layer, and a microlens array at a top layer. The photodiode array structure in each pixel structure has a polarizer with different polarization directions, for example, four different angles of 0 °, 45 °, 90 °, 135 °, and each 4 pixels is used as a calculation unit. Fig. 2 is a schematic diagram of a conventional pixel structure, and as shown in fig. 2, the pixel structure includes: the pixel structure comprises a micro lens, a polaroid and a PD, wherein incident light passes through the micro lens and enters the inside of the pixel structure, light with a specific polarization direction passes through the polaroid and is absorbed by the PD, and the PD converts an absorbed optical signal into an electric signal for subsequent image processing. The existing polarized image sensor is generally black and white, cannot be used for color polarized imaging, and each pixel can only obtain polarized light of one color, and the absorptivity of light energy is not high.
Disclosure of Invention
In order to solve the foregoing technical problem, embodiments of the present application desirably provide a pixel structure, an image sensor, and a terminal, which can implement that a single pixel structure absorbs polarized light signals of two specific bands, and improve the utilization rate of the polarized light signals.
The technical scheme of the application is realized as follows:
in a first aspect, a pixel structure is provided, which includes: at least two sub-pixel structures, the sub-pixel structures comprising: the device comprises an optical filter, at least two polarization photoelectric conversion units and a readout circuit;
the at least two polarization photoelectric conversion units comprise a first polarization photoelectric conversion unit and a second polarization photoelectric conversion unit, and the optical filter, the first polarization photoelectric conversion unit and the second polarization photoelectric conversion unit are sequentially stacked along the direction of incident light of the sub-pixel structure;
the optical filter is used for filtering the incident light to obtain optical signals of a specific waveband which can be absorbed by the at least two polarization photoelectric conversion units;
the first-class polarization photoelectric conversion unit is used for absorbing a polarized light signal of a first specific waveband and converting the absorbed light signal into an electric signal;
the second-type polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific waveband and converting the absorbed light signal into an electric signal; the polarization photoelectric conversion units in the same sub-pixel structure are used for absorbing polarization light signals in the same polarization direction, and the polarization photoelectric conversion units in different sub-pixel structures are used for absorbing polarization light signals in different polarization directions;
the readout circuit is connected with the at least two polarization photoelectric conversion units and is used for reading out the electric signals of the at least two polarization photoelectric conversion units.
In a second aspect, there is provided an image sensor comprising a pixel structure of any of the above.
In a third aspect, a terminal is provided, which includes the above image sensor.
By adopting the technical scheme, a novel pixel structure is obtained, the pixel structure comprises at least two sub-pixel structures, the sub-pixel structures comprise a first type of polarization photoelectric conversion unit and a second type of polarization photoelectric conversion unit which are stacked, the first type of polarization photoelectric conversion unit at a shallow position (namely, a position close to an optical filter) absorbs polarized light signals of a first specific waveband by utilizing the corresponding relation between the wavelength and the penetration depth, and the second type of polarization photoelectric conversion unit at a deeper position (namely, a position far away from the optical filter) absorbs polarized light signals of a second specific waveband. Therefore, the single pixel structure can absorb the polarized light signals of two specific wave bands, and the utilization rate of the polarized light signals is improved; the polarized photoelectric conversion unit is ensured to have higher quantum efficiency by adjusting the size of the photosensitive area, and the absorption rate of polarized light signals is improved.
Drawings
FIG. 1 is a schematic diagram of a pixel array of a conventional polarized image sensor;
FIG. 2 is a diagram of a conventional pixel structure;
FIG. 3 is a schematic diagram illustrating a sub-pixel structure according to an embodiment of the present disclosure;
fig. 4 is a schematic view of a first distribution array of first-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application;
fig. 5 is a schematic view of a first distribution array of second-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application;
fig. 6 is a schematic view of a second distribution array of the first-type polarization photoelectric conversion units of the pixel structure in the embodiment of the present application;
fig. 7 is a schematic view of a second distribution array of second-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application;
fig. 8 is a schematic diagram of a third distribution array of the first-type polarization photoelectric conversion units of the pixel structure in the embodiment of the present application;
fig. 9 is a schematic diagram of a third distribution array of second-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application;
FIG. 10 is a schematic longitudinal cross-sectional view of a sub-pixel structure in an embodiment of the present application;
FIG. 11 is a schematic diagram illustrating a structure of a readout circuit according to an embodiment of the present application;
FIG. 12 is a schematic diagram of a first component structure of an image sensor in an embodiment of the present application;
FIG. 13 is a diagram illustrating a second structure of an image sensor according to an embodiment of the present disclosure;
FIG. 14 is a schematic diagram of a third component structure of an image sensor in an embodiment of the present application;
fig. 15 is a schematic structural diagram of a terminal in an embodiment of the present application.
Detailed Description
So that the manner in which the features and elements of the present embodiments can be understood in detail, a more particular description of the embodiments, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings.
In practical application, the pixel structure is used as an important component of an image sensor, and can perform photoelectric conversion on received natural light, so as to obtain an electric signal, however, when the pixel size of the pixel structure is about 600nm, the polarization photoelectric conversion unit has higher quantum efficiency, and as the pixel size is reduced, the area of a photosensitive region of the polarization photoelectric conversion unit is also reduced, so that the quantum efficiency of the polarization photoelectric conversion unit is reduced, and the imaging effect of the image sensor is affected.
Here, quantum efficiency is a measure of the efficiency of converting photons of a certain frequency/wavelength of a certain color channel into electrons, in a conventional pixel structure, as the size of a pixel is continuously reduced, the area of a photosensitive region of a polarization photoelectric conversion unit is also reduced, so that the maximum signal charge amount that can be accommodated in a charge collection potential well of the polarization photoelectric conversion unit, that is, the full well capacity (referred to as well capacity for short), is suppressed, the well capacity is suppressed, and indexes such as the dynamic range, the signal-to-noise ratio, the sensitivity and the like of a small-sized pixel are deteriorated, and these indexes directly affect the imaging quality of the small-sized pixel.
In order to ensure the quantum efficiency of a polarization photoelectric conversion unit in an image sensor, the embodiment of the application provides a pixel structure in the image sensor. The pixel structure comprises at least two sub-pixel structures, and fig. 3 is a schematic view of a composition structure of the sub-pixel structure in the embodiment of the present application; as shown in fig. 3, the sub-pixel structure includes: an optical filter 301, at least two polarization photoelectric conversion units, and a readout circuit 303;
the at least two polarization photoelectric conversion units include a first polarization photoelectric conversion unit 302a and a second polarization photoelectric conversion unit 302b, and the optical filter, the first polarization photoelectric conversion unit 302a, and the second polarization photoelectric conversion unit 302b are sequentially stacked along the direction of incident light of the sub-pixel structure 30;
the optical filter 301 is configured to filter the incident light to obtain an optical signal of a specific wavelength band that can be absorbed by the at least one polarization photoelectric conversion unit;
the first polarization photoelectric conversion unit 302a is configured to absorb a polarized optical signal of a first specific wavelength band and convert the absorbed optical signal into an electrical signal;
the second-type polarization photoelectric conversion unit 302b is configured to absorb a polarized optical signal of a second specific wavelength band, and convert the absorbed optical signal into an electrical signal; the polarization photoelectric conversion units in the same sub-pixel structure are used for absorbing polarization light signals in the same polarization direction, and the polarization photoelectric conversion units in different sub-pixel structures are used for absorbing polarization light signals in different polarization directions;
the readout circuit 303 is connected to the at least one polarization photoelectric conversion unit, and is configured to read out an electrical signal of the at least one polarization photoelectric conversion unit.
The incident light penetrates through the light inlet and enters the sub-pixel structure, and sequentially passes through the first type polarization photoelectric conversion unit and the second type polarization photoelectric conversion unit along an incident light path, the first type polarization photoelectric conversion unit converts the optical signal of the first specific waveband into an electric signal, and the second type polarization photoelectric conversion unit converts the optical signal of the second specific waveband into an electric signal; the readout circuit reads out the electric signal of the polarization photoelectric conversion unit for color perception.
In practical applications, at least two polarization photoelectric conversion units in one sub-pixel structure share one readout circuit for reading out electrical signals of at least two polarization photoelectric conversion units, or one polarization photoelectric conversion unit corresponds to one readout circuit for reading out electrical signals of corresponding polarization photoelectric conversion units respectively.
In some embodiments, the first type of polarization photoelectric conversion unit is configured to absorb a first specific wavelength band of polarized light signals according to a resonance wavelength of the photosensitive region; the second type of polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific wave band according to the resonance wavelength of the photosensitive area; the resonance wavelength is the wavelength when the light-sensitive area of the first type of polarization photoelectric conversion unit or the second type of polarization photoelectric conversion unit generates resonance absorption; different sizes of photosensitive areas correspond to different resonance wavelengths.
Here, when the side length of the square light entrance in the sub-pixel structure is smaller than the shortest wavelength of the specific wavelength band, in order to prevent the specific wavelength band from being diffracted, the first-type polarization photoelectric conversion unit and the second-type polarization photoelectric conversion unit absorb the specific wavelength band according to the resonance wavelength of the light sensing region thereof.
In practical applications, the light-sensing area may be an upper surface of the polarization photoelectric conversion unit, and the resonance wavelength of the polarization photoelectric conversion unit is related to the refractive index and the size of the light-sensing area of the polarization photoelectric conversion unit, so that the resonance wavelength of the polarization photoelectric conversion unit can be adjusted by adjusting the refractive index of the light-sensing area and/or the size of the light-sensing area.
In practical application, when the side length of the square of the pixel light inlet is less than the shortest wavelength of a specific waveband, different resonance wavelengths can be obtained only by adjusting the size of the photosensitive area of the polarization photoelectric conversion unit, so that light of the specific waveband is absorbed by the polarization photoelectric conversion unit in a resonance absorption mode, and the polarization photoelectric conversion unit still has higher quantum efficiency in a smaller photosensitive area.
In order to make the first type of polarization photoelectric conversion unit still have high quantum efficiency under a small photosensitive area, the specific waveband is within the waveband range of the resonance wavelength. In the embodiment of the present application, the resonance wavelength is adjusted by adjusting the size of the photosensitive region of the polarization photoelectric conversion unit, so that the first specific wavelength band is within the wavelength band range of the resonance wavelength of the photosensitive region of the first type of polarization photoelectric conversion unit, and the second specific wavelength band is within the wavelength band range of the resonance wavelength of the photosensitive region of the second type of polarization photoelectric conversion unit. Therefore, the obtained polarization photoelectric conversion unit with the smaller size can realize resonance absorption on optical signals of a specific waveband, so that the polarization photoelectric conversion unit still has higher quantum efficiency under a smaller photosensitive area. By increasing the number of the first-class polarization photoelectric conversion units and arranging the arrangement modes of the polarization photoelectric conversion units, the absorptivity of the sub-pixel structure to optical signals in a specific wave band can be further improved.
In some embodiments, the polarization photoelectric conversion unit is shaped as a straight prism; the light sensing area of the polarization photoelectric conversion unit is a polygonal upper bottom surface of a straight prism. For example, the polygonal bottom surface is a regular quadrangle, a regular hexagon, a regular octagon, or the like. The upper surface of the right prism is a photosensitive area which can be a regular polygon or an irregular polygon.
Illustratively, the photosensitive region is rectangular, and the polarization direction of the polarized light signal absorbed by the polarization photoelectric conversion unit is the same as the long side direction of the rectangular bottom surface of the straight prism.
In some embodiments, when the length of the rectangular bottom surface of the first polarization photoelectric conversion unit is a first length, the first polarization photoelectric conversion unit is used for absorbing a polarized light signal of a first specific waveband; when the length of the rectangular bottom surface of the second type of polarization photoelectric conversion unit is a second length, the second type of polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific wave band; wherein the first length is less than the second length and is not equal. The first specific wavelength band does not coincide with the second specific wavelength band, so that mutual crosstalk in absorption of light is avoided.
Illustratively, the first specific wavelength band is a blue light wavelength band, and the second specific wavelength band is a red light wavelength band; the first specific waveband is a blue light waveband, and the second specific waveband is a green light waveband; or, the first specific wave band is a green light wave band, and the second specific wave band is a red light wave band.
In practical applications, the optical filter allows the optical signals of the first specific wavelength band and the optical signals of the second specific wavelength band to pass through, but does not allow the optical signals of other wavelength bands to pass through. For example, the filter may be a purple green sheet, which only allows red light and blue light to pass through; the filter can be a yellow filter, and only red and green are allowed to pass through; the filter may be a cyan filter, allowing only blue and green to pass through.
In some embodiments, the width of the rectangular bottom surface of the first type of polarization photoelectric conversion unit is a first width, and the width of the rectangular bottom surface of the second type of polarization photoelectric conversion unit is a second width; wherein the first width and the second width are equal.
In some embodiments, the height of the first type of polarization photoelectric conversion unit is a first height, and the height of the second type of polarization photoelectric conversion unit is a second height; wherein the first height and the second height are not equal.
Specifically, the polarization photoelectric conversion unit may be a polarization Photodiode (PD), the PD has a shape of a rectangular prism, a bottom surface of the rectangular prism is rectangular, and a photosensitive area of the PD is rectangular. For example, the size of the light-sensing region of the polarization photoelectric conversion unit that absorbs blue light is 70nm × 50nm, the diameter of the light-sensing region of the polarization photoelectric conversion unit that absorbs green light is 90nm × 50nm, and the diameter of the light-sensing region of the polarization photoelectric conversion unit that absorbs red light is 110nm × 50 nm.
Specifically, after incident light passes through the optical filter, a polarized light signal of blue light is firstly absorbed by M cuboid first-class polarized photodiodes distributed in an equidistant array, the height of the first-class polarized photodiodes is 80nm-500nm, the higher the height is, the higher the absorptivity is, the more than 98% of the absorptivity can be achieved at 1um, but the absorption of the polarized light signal of red light is greatly influenced by the first height, and the absorptivities of the two are balanced. Due to resonance absorption of the cuboid polarization photodiode, more than 95% of blue light can be absorbed and converted into an electric signal to be stored in the first PD, the signal of a blue light channel is read out, and the red light is hardly absorbed. When the red light reaches the second layer PD, the red light is absorbed by the M cuboid second-type polarized photodiodes distributed in the equally spaced array on the second layer.
That is, the long side length of the rectangular bottom surface of the polarization photoelectric conversion unit is used to limit the wavelength of the absorbed optical signal, and the long side direction is used to limit the polarization direction of the absorbed optical signal. Therefore, in the embodiment of the application, a polarizing plate is not required to be arranged above the photoelectric conversion unit, and the arrangement direction of the photoelectric conversion unit is arranged, so that polarized light signals with the polarization direction being the arrangement direction can be absorbed, and the hardware configuration of the pixel structure is simplified.
In some embodiments, the at least two polarization photoelectric conversion units include M first-type polarization photoelectric conversion units and M second-type polarization photoelectric conversion units; wherein M is a positive integer; the M first-type polarization photoelectric conversion units are distributed on a first cross section, and the M second-type polarization photoelectric conversion units are distributed on a second cross section; wherein the first cross section and the second cross section are perpendicular to an incident light direction of the sub-pixel structure.
In some embodiments, when M takes 1, the sub-pixel unit includes one first-type polarization photoelectric conversion unit and one second-type polarization photoelectric conversion unit, the two polarization photoelectric conversion units are stacked, and the first-type polarization photoelectric conversion unit is located above the second-type polarization photoelectric conversion unit.
In some embodiments, when M is an integer greater than 1, the top ends of the M first-type polarization photoelectric conversion units are close to the optical filter; the bottom ends of the M first-type polarization photoelectric conversion units are connected and close to the top ends of the M second-type polarization photoelectric conversion units; and the bottom ends of the second-type polarization photoelectric conversion units are connected.
In practical applications, at least two sub-pixel structures may be included in the pixel structure for absorbing optical signals with different polarization directions. For example, 2, 4, 8, 16 or more sub-pixel structures may be included to absorb more polarized light signals.
The pixel structures shown in fig. 4 and 5 include sub-pixel structures that absorb two different polarized light signals, with polarization directions of 45 ° and 135 °, respectively. Fig. 4 is a schematic view of a first distribution array of first-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application; the pixel structure is cut along a first section of the pixel structure to obtain a distribution array of the first-class polarization photoelectric conversion units, the left-side sub-pixel structure comprises 4 first-class polarization photoelectric conversion units with an arrangement direction of 45 degrees, and the right-side sub-pixel structure comprises 4 first-class polarization photoelectric conversion units with an arrangement direction of 135 degrees.
Fig. 5 is a schematic view of a first distribution array of second-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application; the pixel structure is cut along a second section of the pixel structure to obtain a distribution array of second-type polarization photoelectric conversion units, the left-side sub-pixel structure comprises 4 second-type polarization photoelectric conversion units with an arrangement direction of 45 degrees, and the right-side sub-pixel structure comprises 4 second-type polarization photoelectric conversion units with an arrangement direction of 135 degrees.
The pixel structures shown in fig. 6 and 7 include sub-pixel structures that absorb three different polarized light signals, with polarization directions of 0 °, 60 °, and 120 °, respectively. Fig. 6 is a schematic view of a second distribution array of the first-type polarization photoelectric conversion units of the pixel structure in the embodiment of the present application; the pixel structure is cut along a first section of the pixel structure to obtain a distribution array of first-class polarized photoelectric conversion units, the left-side sub-pixel structure comprises 4 first-class polarized photoelectric conversion units with the arrangement direction of 0 degree, the middle sub-pixel structure comprises 4 first-class polarized photoelectric conversion units with the arrangement direction of 60 degrees, and the right-side sub-pixel structure comprises 4 first-class polarized photoelectric conversion units with the arrangement direction of 120 degrees.
Fig. 7 is a schematic view of a second distribution array of second-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application; the pixel structure is cut along a second section of the pixel structure to obtain a distribution array of second-type polarized photoelectric conversion units, the left-side sub-pixel structure comprises 4 second-type polarized photoelectric conversion units with the arrangement direction of 0 degree, the middle sub-pixel structure comprises 4 second-type polarized photoelectric conversion units with the arrangement direction of 60 degrees, and the right-side sub-pixel structure comprises 4 second-type polarized photoelectric conversion units with the arrangement direction of 120 degrees.
The pixel structures shown in fig. 8 and 9 include sub-pixel structures that absorb polarized light signals of 4 different polarization directions, which are 0 °, 45 °, 90 °, and 135 °, respectively. Fig. 8 is a schematic diagram of a third distribution array of the first-type polarization photoelectric conversion units of the pixel structure in the embodiment of the present application; the pixel structure is cut along a first section of the pixel structure to obtain a distribution array of first-class polarized photoelectric conversion units, a sub-pixel structure at the upper left corner comprises 4 first-class polarized photoelectric conversion units with an arrangement direction of 0 degree, a sub-pixel structure at the upper right corner comprises 4 first-class polarized photoelectric conversion units with an arrangement direction of 45 degrees, a sub-pixel structure at the lower right corner comprises 4 first-class polarized photoelectric conversion units with an arrangement direction of 90 degrees, and a sub-pixel structure at the lower left corner comprises 4 first-class polarized photoelectric conversion units with an arrangement direction of 135 degrees.
Fig. 9 is a schematic diagram of a third distribution array of second-type polarization photoelectric conversion units of a pixel structure in an embodiment of the present application; the pixel structure is cut along a second section of the pixel structure to obtain a distribution array of second-type polarized photoelectric conversion units, the sub-pixel structure at the upper left corner comprises 4 second-type polarized photoelectric conversion units with the arrangement direction of 0 degree, the sub-pixel structure at the upper right corner comprises 4 second-type polarized photoelectric conversion units with the arrangement direction of 45 degrees, the sub-pixel structure at the lower right corner comprises 4 second-type polarized photoelectric conversion units with the arrangement direction of 90 degrees, and the sub-pixel structure at the lower left corner comprises 4 second-type polarized photoelectric conversion units with the arrangement direction of 135 degrees.
In practical application, the distribution array positions of the first-type polarization photoelectric conversion units and the distribution array positions of the second-type polarization photoelectric conversion units are distributed in an up-down aligned manner or in a staggered manner, and the first-type polarization photoelectric conversion units shown in fig. 4 to 9 are located right above the second-type polarization photoelectric conversion units, and the distribution array positions of the first-type polarization photoelectric conversion units and the second-type polarization photoelectric conversion units are aligned.
In practical applications, besides the pixel structures in fig. 8 and 9 including the sub-pixel structures that absorb polarized light signals with 4 different polarization directions, the pixel structures may further include sub-pixel structures that absorb polarized light signals with 9, 16, or more polarization directions to obtain polarized light signals with more polarization directions.
For example, a polarized light signal with 9 polarization directions is absorbed, and the polarization directions are 0 °, 20 °, 40 °, 60 °, 80 °, 100 °, 120 °, 140 °, and 160 °, respectively.
The polarization direction of the polarized light signals with 16 polarization directions is respectively 0 degrees, 10 degrees, 20 degrees, 30 degrees, 40 degrees, 50 degrees, 60 degrees, 70 degrees, 80 degrees, 90 degrees, 100 degrees, 110 degrees, 120 degrees, 130 degrees, 140 degrees, 150 degrees, 160 degrees and 170 degrees.
Fig. 10 is a schematic longitudinal cross-sectional view of a sub-pixel structure in an embodiment of the present application, in which an optical filter 301 in the sub-pixel structure allows light of a first specific wavelength band and light of a second specific wavelength band to pass through, and after incident light passes through the optical filter 301, optical signals of the first specific wavelength band are first absorbed by M first polarization photoelectric conversion units 302a close to the optical filter 301, and optical signals of the second specific wavelength band are then absorbed by M second polarization photoelectric conversion units 302b at a deeper position, and only a cross-section of 4 first polarization photoelectric conversion units 302a and 3 second polarization photoelectric conversion units 302b are shown in fig. 8. The first-type polarization photoelectric conversion unit 302a and the second-type polarization photoelectric conversion unit 302b share the readout circuit 303.
Fig. 11 is a schematic diagram of a composition structure of a readout circuit in an embodiment of the present application, in which an optical filter 301 in a sub-pixel structure allows light of a first specific wavelength band and light of a second specific wavelength band to pass through, and does not allow light of other wavelengths to pass through, after incident light passes through the optical filter 301, an optical signal of the first specific wavelength band is first absorbed by M first-type polarization photoelectric conversion units 302a in shallow positions, and an optical signal of the second specific wavelength band is then absorbed by M second-type polarization photoelectric conversion units 302b in deep positions, and only a cross-section of 4 first-type polarization photoelectric conversion units 302a and 3 second-type polarization photoelectric conversion units 302b are shown in fig. 10. The first-type polarization photoelectric conversion unit 302a and the second-type polarization photoelectric conversion unit 302b share a readout circuit 303 including two Transfer Gates (TG) TG1 and TG2, a Floating Diffusion (FD), a Source-follower Transistor (SF), a Row Selection Transistor (RST), and a selection Transistor (SEL). The work flow of the reading circuit comprises the following steps: 1. exposing; an electron-hole pair generated by irradiating the PN junction with light is separated due to the existence of an electric field in the PN junction, the electron moves to an n region, and the hole moves to an energy accumulation region of a p region; 2. resetting; loading reverse voltage to the PN junction, or activating RST to reset the PN junction, and resetting the read-out region (n + region) to high level; 3. reading out a reset level; after the reset is completed, reading out a reset level; 4. charge transfer, activating the transfer gate TG, transferring charge from the n region completely to the n + region for readout; 5. the signal level of the n + region is read out.
By adopting the technical scheme, a novel pixel structure is obtained, the pixel structure comprises at least two sub-pixel structures, the sub-pixel structures comprise a first type polarization photoelectric conversion unit and a second type polarization photoelectric conversion unit which are stacked, the first type polarization photoelectric conversion unit at a shallow position absorbs polarized light signals of a first specific waveband by utilizing the corresponding relation between the wavelength and the penetration depth, and the second type polarization photoelectric conversion unit at a deep position absorbs polarized light signals of a second specific waveband. Therefore, the single pixel structure can absorb the polarized light signals of two specific wave bands, and the utilization rate of the polarized light signals is improved; the polarized photoelectric conversion unit is ensured to have higher quantum efficiency by adjusting the size of the photosensitive area, and the absorption rate of polarized light signals is improved.
Fig. 12 is a schematic diagram of a first composition structure of an image sensor in an embodiment of the present application, and as shown in fig. 12, an image sensor 120 includes a pixel structure 1201 according to one or more embodiments, where a plurality of pixel structures form an entire pixel column according to a specific arrangement.
Specifically, the pixel structure 1201 includes: a subpixel structure comprising: at least two sub-pixel structures, the sub-pixel structures comprising: the device comprises an optical filter, at least two polarization photoelectric conversion units and a readout circuit;
the at least two polarization photoelectric conversion units comprise a first polarization photoelectric conversion unit and a second polarization photoelectric conversion unit, and the optical filter, the first polarization photoelectric conversion unit and the second polarization photoelectric conversion unit are sequentially stacked along the direction of incident light of the sub-pixel structure;
the optical filter is used for filtering incident light to obtain optical signals of a specific waveband, which can be absorbed by the at least two polarization photoelectric conversion units;
the first-class polarization photoelectric conversion unit is used for absorbing a polarized light signal of a first specific waveband and converting the absorbed light signal into an electric signal;
the second-type polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific waveband and converting the absorbed light signal into an electric signal; the polarization photoelectric conversion units in the same sub-pixel structure are used for absorbing polarization light signals in the same polarization direction, and the polarization photoelectric conversion units in different sub-pixel structures are used for absorbing polarization light signals in different polarization directions;
the readout circuit is connected with the at least two polarization photoelectric conversion units and is used for reading out the electric signals of the at least two polarization photoelectric conversion units.
In some embodiments, the first type of polarization photoelectric conversion unit is configured to absorb a first specific wavelength band of polarized light signals according to a resonance wavelength of the photosensitive region; the second type of polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific wave band according to the resonance wavelength of the photosensitive area; the resonance wavelength is the wavelength when the light-sensitive area of the first type of polarization photoelectric conversion unit or the second type of polarization photoelectric conversion unit generates resonance absorption; different sizes of photosensitive areas correspond to different resonance wavelengths.
In some embodiments, the polarization photoelectric conversion unit is shaped as a straight prism; the light sensing area of the polarization photoelectric conversion unit is an upper polygonal bottom surface of the straight prism.
In some embodiments, the polygonal bottom surface of the right prism is rectangular, and the polarization direction of the polarized light signal absorbed by the polarization photoelectric conversion unit is the same as the long side direction of the rectangular bottom surface of the right prism.
In some embodiments, when the length of the rectangular bottom surface of the first polarization photoelectric conversion unit is a first length, the first polarization photoelectric conversion unit is used for absorbing a polarized light signal of a first specific waveband; when the length of the rectangular bottom surface of the second type of polarization photoelectric conversion unit is a second length, the second type of polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific wave band; wherein the first length is less than the second length.
In some embodiments, the width of the rectangular bottom surface of the first type of polarization photoelectric conversion unit is a first width, and the width of the rectangular bottom surface of the second type of polarization photoelectric conversion unit is a second width; wherein the first width and the second width are equal.
In some embodiments, the at least two polarization photoelectric conversion units include M first-type polarization photoelectric conversion units and M second-type polarization photoelectric conversion units; wherein M is a positive integer; the M first-type polarization photoelectric conversion units are distributed on a first cross section, and the M second-type polarization photoelectric conversion units are distributed on a second cross section; wherein the first cross section and the second cross section are perpendicular to an incident light direction of the sub-pixel structure.
In some embodiments, the top ends of the M first-type polarization photoelectric conversion units are close to the optical filter; the bottom ends of the M first-type polarization photoelectric conversion units are connected and close to the top ends of the M second-type polarization photoelectric conversion units; and the bottom ends of the second-type polarization photoelectric conversion units are connected.
In some embodiments, the first type of polarization photoelectric conversion units are distributed on the first cross section in an equally spaced array; the second type of polarization photoelectric conversion units are distributed on the second cross section in an equidistant array mode.
When only one pixel structure is included, the image sensor is composed of an array distribution form in which P rows and Q columns are formed by N pixel structures, where N is P × Q.
When at least two pixel structures are included, the light signals of a specific wavelength band that can be absorbed by the different pixel structures are not completely the same, for example, a first pixel structure is used for absorbing red light and blue light, and a second pixel structure is used for absorbing red light and green light. When two pixel structures are included, the two pixel structures can be distributed at intervals to form an array distribution form of P rows and Q columns, and the number of the two pixel structures is equal.
In practical applications, the pixel structure in the image sensor is composed of one or more than two pixel structures. The different pixel structures are used for absorbing optical signals of different specific wave bands, and the optical filter only allows optical signals of a first specific wave band and optical signals of a second specific wave band to pass through, but not allows optical signals of other wavelengths to pass through. For example, the filter may be a violet filter, which only allows red light and blue light to pass through; the filter can be a yellow filter, and only red and green are allowed to pass through; the filter may be a cyan filter, allowing only blue and green to pass through.
FIG. 13 is a schematic diagram of a second component structure of an image sensor according to an embodiment of the present disclosure, in which the image sensor includes two pixel structures, P and Y, where P represents a pixel structure that absorbs red light and blue light, and a filter is Purple (Purple); y represents the pixel structure that absorbs red and green light, and the filter is Yellow (Yellow).
FIG. 14 is a schematic diagram of a third component of an image sensor according to an embodiment of the present disclosure, where the image sensor includes three pixel structures, respectively represented by P, Y and C, where P represents a pixel structure that absorbs red light and blue light, and the filter is Purple (Purple); y represents a pixel structure that absorbs red and green light, and the filter is Yellow (Yellow); c represents a pixel structure that absorbs blue and green light, and the filter is Cyan (Cyan).
In the embodiment of the present application, a sub-wavelength ultra-small pixel structure of a pixel structure is applied to a sub-wavelength Complementary Metal Oxide Semiconductor image sensor (CIS).
By adopting the technical scheme, a novel pixel structure is obtained, the pixel structure comprises at least two sub-pixel structures, the sub-pixel structures comprise a first type polarization photoelectric conversion unit and a second type polarization photoelectric conversion unit which are stacked, the first type polarization photoelectric conversion unit at a shallow position absorbs polarized light signals of a first specific waveband by utilizing the corresponding relation between the wavelength and the penetration depth, and the second type polarization photoelectric conversion unit at a deep position absorbs polarized light signals of a second specific waveband. Therefore, the single pixel structure can absorb the polarized light signals of two specific wave bands, and the utilization rate of the polarized light signals is improved; the polarized photoelectric conversion unit is ensured to have higher quantum efficiency by adjusting the size of the photosensitive area, and the absorption rate of polarized light signals is improved. By adopting the technical scheme, a novel pixel structure is obtained, the pixel structure comprises at least two sub-pixel structures, the sub-pixel structures comprise a first type of polarization photoelectric conversion unit and a second type of polarization photoelectric conversion unit which are stacked, the first type of polarization photoelectric conversion unit at a shallow position (namely, a position close to an optical filter) absorbs polarized light signals of a first specific waveband by utilizing the corresponding relation between the wavelength and the penetration depth, and the second type of polarization photoelectric conversion unit at a deeper position (namely, a position far away from the optical filter) absorbs polarized light signals of a second specific waveband. Therefore, the single pixel structure can absorb the polarized light signals of two specific wave bands, and the utilization rate of the polarized light signals is improved; the polarized photoelectric conversion unit is ensured to have higher quantum efficiency by adjusting the size of the photosensitive area, and the absorption rate of polarized light signals is improved.
Fig. 15 is a schematic structural diagram of a terminal in an embodiment of the present application, and as shown in fig. 15, the terminal 150 includes an image sensor 1501 as described in the above embodiment.
The technical solutions described in the embodiments of the present application can be arbitrarily combined without conflict.
In the several embodiments provided in the present application, it should be understood that the disclosed method and intelligent device may be implemented in other ways. The above-described device embodiments are merely illustrative, for example, the division of the unit is only a logical functional division, and there may be other division ways in actual implementation, such as: multiple units or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. In addition, the coupling, direct coupling or communication connection between the components shown or discussed may be through some interfaces, and the indirect coupling or communication connection between the devices or units may be electrical, mechanical or other forms.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed on a plurality of network units; some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, all functional units in the embodiments of the present application may be integrated into one second processing unit, or each unit may be separately regarded as one unit, or two or more units may be integrated into one unit; the integrated unit can be realized in a form of hardware, or in a form of hardware plus a software functional unit.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application.
Claims (11)
1. A pixel structure, comprising: at least two sub-pixel structures, the sub-pixel structures comprising: the device comprises an optical filter, at least two polarization photoelectric conversion units and a readout circuit;
the at least two polarization photoelectric conversion units comprise a first polarization photoelectric conversion unit and a second polarization photoelectric conversion unit, and the optical filter, the first polarization photoelectric conversion unit and the second polarization photoelectric conversion unit are sequentially stacked along the direction of incident light of the sub-pixel structure;
the optical filter is used for filtering the incident light to obtain optical signals of a specific waveband which can be absorbed by the at least two polarization photoelectric conversion units;
the first-class polarization photoelectric conversion unit is used for absorbing a polarized light signal of a first specific waveband and converting the absorbed light signal into an electric signal;
the second-type polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific waveband and converting the absorbed light signal into an electric signal; the polarization photoelectric conversion units in the same sub-pixel structure are used for absorbing polarization light signals in the same polarization direction, and the polarization photoelectric conversion units in different sub-pixel structures are used for absorbing polarization light signals in different polarization directions;
the readout circuit is connected with the at least two polarization photoelectric conversion units and is used for reading out the electric signals of the at least two polarization photoelectric conversion units.
2. The pixel structure of claim 1, wherein the first-type polarized photoelectric conversion unit is configured to absorb a polarized light signal of a first specific wavelength band according to a resonance wavelength of the photosensitive region;
the second type of polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific wave band according to the resonance wavelength of the photosensitive area;
the resonance wavelength is the wavelength when the light-sensitive area of the first type of polarization photoelectric conversion unit or the second type of polarization photoelectric conversion unit generates resonance absorption; the different sizes of photosensitive areas correspond to different bands of resonant wavelengths.
3. The pixel structure according to claim 1 or 2, wherein the polarization photoelectric conversion unit is shaped as a straight prism; the light sensing area of the polarization photoelectric conversion unit is a polygonal upper bottom surface of a straight prism.
4. The pixel structure according to claim 3, wherein the polygonal bottom surface of the right prism is rectangular, and the polarization direction of the polarized light signal absorbed by the polarization photoelectric conversion unit is the same as the long side direction of the rectangular bottom surface of the right prism.
5. The pixel structure of claim 4, wherein the rectangular bottom surface of the first-type polarization photoelectric conversion unit is configured to absorb a polarized light signal of a first specific wavelength band when the length of the rectangular bottom surface is a first length;
when the length of the rectangular bottom surface of the second type of polarization photoelectric conversion unit is a second length, the second type of polarization photoelectric conversion unit is used for absorbing a polarized light signal of a second specific wave band; wherein the first length is less than the second length.
6. The pixel structure according to claim 3, wherein the height of the right prism is within a predetermined height range; wherein the preset height range is a height range which ensures that the light absorptivity of the polarization photoelectric conversion unit is greater than an absorptivity threshold.
7. The pixel structure according to claim 1, wherein the at least two polarization photoelectric conversion units include M first-type polarization photoelectric conversion units and M second-type polarization photoelectric conversion units; wherein M is a positive integer;
the M first-type polarization photoelectric conversion units are distributed on a first cross section, and the M second-type polarization photoelectric conversion units are distributed on a second cross section; wherein the first cross-section and the second cross-section are perpendicular to the direction of the incident light.
8. The pixel structure according to claim 7, wherein top ends of the M first-type polarization photoelectric conversion units are close to the optical filter;
the bottom ends of the M first-type polarization photoelectric conversion units are connected and close to the top ends of the M second-type polarization photoelectric conversion units;
and the bottom ends of the second-type polarization photoelectric conversion units are connected.
9. The pixel structure according to claim 7, wherein the first-type polarization photoelectric conversion units are distributed in an equally-spaced array on the first cross section; the second type of polarization photoelectric conversion units are distributed on the second cross section in an equidistant array mode.
10. An image sensor, characterized in that the image sensor comprises a pixel structure according to any one of the preceding claims 1 to 9.
11. A terminal, characterized in that it comprises an image sensor as claimed in claim 9.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113286067A (en) * | 2021-05-25 | 2021-08-20 | Oppo广东移动通信有限公司 | Image sensor, image pickup apparatus, electronic device, and imaging method |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345248A (en) * | 2007-07-09 | 2009-01-14 | 博立码杰通讯(深圳)有限公司 | Multi-optical spectrum light-sensitive device and preparation thereof |
| CN102637714A (en) * | 2012-04-27 | 2012-08-15 | 上海中科高等研究院 | CMOS (Complementary Metal-Oxide-Semiconductor) image sensor |
| CN105898118A (en) * | 2015-02-16 | 2016-08-24 | 三星电子株式会社 | Image sensor and imaging apparatus including the same |
| TW201711176A (en) * | 2015-08-12 | 2017-03-16 | Sony Interactive Entertainment Inc | Imaging element, image sensor, imaging device and information processing device |
| CN107017312A (en) * | 2015-09-17 | 2017-08-04 | 三星电子株式会社 | Photoelectric device and the electronic installation including the photoelectric device |
| CN107039473A (en) * | 2015-11-30 | 2017-08-11 | 三星电子株式会社 | Imaging sensor and the electronic installation including it |
| CN109581548A (en) * | 2019-01-04 | 2019-04-05 | 南方科技大学 | Linearly polarized light conversion element, preparation method and linearly polarized light conversion system |
| CN110049261A (en) * | 2019-04-23 | 2019-07-23 | Oppo广东移动通信有限公司 | A kind of dot structure, imaging sensor and terminal |
| CN110087005A (en) * | 2019-04-23 | 2019-08-02 | Oppo广东移动通信有限公司 | A kind of Color Polarization formula CIS and image processing method, storage medium |
| CN110085611A (en) * | 2019-04-23 | 2019-08-02 | Oppo广东移动通信有限公司 | Pixel unit, imaging sensor and image processing method and storage medium |
| CN110164895A (en) * | 2019-05-31 | 2019-08-23 | Oppo广东移动通信有限公司 | Complementary metal oxide image sensor, image processing method and storage medium |
-
2019
- 2019-11-01 CN CN201911061270.2A patent/CN110854145A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345248A (en) * | 2007-07-09 | 2009-01-14 | 博立码杰通讯(深圳)有限公司 | Multi-optical spectrum light-sensitive device and preparation thereof |
| CN102637714A (en) * | 2012-04-27 | 2012-08-15 | 上海中科高等研究院 | CMOS (Complementary Metal-Oxide-Semiconductor) image sensor |
| CN105898118A (en) * | 2015-02-16 | 2016-08-24 | 三星电子株式会社 | Image sensor and imaging apparatus including the same |
| TW201711176A (en) * | 2015-08-12 | 2017-03-16 | Sony Interactive Entertainment Inc | Imaging element, image sensor, imaging device and information processing device |
| CN107017312A (en) * | 2015-09-17 | 2017-08-04 | 三星电子株式会社 | Photoelectric device and the electronic installation including the photoelectric device |
| CN107039473A (en) * | 2015-11-30 | 2017-08-11 | 三星电子株式会社 | Imaging sensor and the electronic installation including it |
| CN109581548A (en) * | 2019-01-04 | 2019-04-05 | 南方科技大学 | Linearly polarized light conversion element, preparation method and linearly polarized light conversion system |
| CN110049261A (en) * | 2019-04-23 | 2019-07-23 | Oppo广东移动通信有限公司 | A kind of dot structure, imaging sensor and terminal |
| CN110087005A (en) * | 2019-04-23 | 2019-08-02 | Oppo广东移动通信有限公司 | A kind of Color Polarization formula CIS and image processing method, storage medium |
| CN110085611A (en) * | 2019-04-23 | 2019-08-02 | Oppo广东移动通信有限公司 | Pixel unit, imaging sensor and image processing method and storage medium |
| CN110164895A (en) * | 2019-05-31 | 2019-08-23 | Oppo广东移动通信有限公司 | Complementary metal oxide image sensor, image processing method and storage medium |
Non-Patent Citations (1)
| Title |
|---|
| 刘书声: "《现代光学手册》", 30 June 1993 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113286067A (en) * | 2021-05-25 | 2021-08-20 | Oppo广东移动通信有限公司 | Image sensor, image pickup apparatus, electronic device, and imaging method |
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