CN116094292A - D-type gallium nitride switch driving circuit and switching power supply circuit - Google Patents

D-type gallium nitride switch driving circuit and switching power supply circuit Download PDF

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Publication number
CN116094292A
CN116094292A CN202310160546.2A CN202310160546A CN116094292A CN 116094292 A CN116094292 A CN 116094292A CN 202310160546 A CN202310160546 A CN 202310160546A CN 116094292 A CN116094292 A CN 116094292A
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China
Prior art keywords
switch
gallium nitride
control module
coupled
type gallium
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CN202310160546.2A
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Chinese (zh)
Inventor
肖海斌
郭春明
张程龙
覃敏贵
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Huayuan Zhixin Semiconductor Shenzhen Co ltd
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Huayuan Zhixin Semiconductor Shenzhen Co ltd
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Priority to CN202310160546.2A priority Critical patent/CN116094292A/en
Publication of CN116094292A publication Critical patent/CN116094292A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)

Abstract

The invention provides a D-type gallium nitride switch driving circuit and a switching power supply circuit, wherein the drain electrode of a D-type gallium nitride switch is connected with a first voltage, the source electrode of the D-type gallium nitride switch is respectively coupled to a first end of a switch module and a first end of a first capacitor, the grid electrode of the D-type gallium nitride switch is coupled to a first end of a first control module, a second end of the first control module is coupled to a second end of the first capacitor, and a second control module is coupled to a control end of the switch module, the second end of the first capacitor and a third end of the switch module are grounded, so that the second control module outputs a control signal to control the on and off of the switch module, the on and off of the D-type gallium nitride switch is controlled, meanwhile, the on speed of the D-type gallium nitride switch is independently regulated by the first control module, the voltage stress of a subsequent circuit can be reduced by the lower on speed, and the EMI characteristics are improved.

Description

D-type gallium nitride switch driving circuit and switching power supply circuit
Technical Field
The invention relates to the field of power supplies, in particular to a D-type gallium nitride switch driving circuit and a switch power supply circuit.
Background
In recent years, gallium nitride switching transistors are widely used in the field of switching power supply topologies, particularly in the field of high-power supplies, AC/DC switching power supplies, and the like.
A switching power supply topology circuit commonly used at present, comprising: buck circuits, boost circuits, buck-Boost circuits, forward circuits, flyback circuits, half-bridge power circuits, and the like are widely used in devices and systems that require voltage conversion.
The primary gallium nitride power tube of the existing switching power supply topology circuit generally adopts an E-type gallium nitride switching tube, a driving circuit is mature, switching speed is adjustable, and the switching power tube is more suitable for soft switching conditions under high-frequency conditions; when the hard switch is limited by topology or control strategy, the D-type gallium nitride switching tube is more advantageous in the aspect of on-state loss, but the D-type gallium nitride switching tube is a normally open device, a normally closed switch needs to be connected in series, the on-off of the D-type gallium nitride switching tube is controlled by controlling the on-off of the normally closed switch, the on-off speed of the D-type gallium nitride switching tube is high and difficult to control, and the voltage stress of a subsequent circuit is overhigh. In this case, the switching speed of the D-type gallium nitride switching transistor may be adjusted by adjusting the switching speed of the normally-closed switch or adjusting the capacitance value of the capacitor connected between the gate and the source of the D-type gallium nitride switching transistor, but this has a limited influence on the switching speed of the D-type gallium nitride switching transistor, but has a large influence on the switching-off speed thereof, and has a large influence on the efficiency.
Therefore, how to control the turn-on speed of the D-type gan switch tube without affecting the turn-off speed thereof to reduce the voltage stress of the subsequent circuit and improve the EMI characteristics has become a technical problem to be solved in the industry.
Disclosure of Invention
The invention provides a D-type gallium nitride switch driving circuit and a switching power supply circuit, which are used for solving the technical problems of reducing the voltage stress of a subsequent circuit and improving the EMI (electro magnetic interference) characteristic by controlling the opening speed of a D-type gallium nitride switch tube under the condition that the closing speed of the D-type gallium nitride switch tube is not influenced.
According to a first aspect of the present invention, there is provided a D-type gallium nitride switch driving circuit comprising: the device comprises a D-type gallium nitride switch, a first control module, a second control module, a first capacitor and a switch module; wherein:
the drain electrode of the D-type gallium nitride switch is connected with a first voltage, the source electrode of the D-type gallium nitride switch is respectively coupled to the first end of the switch module and the first end of the first capacitor, the grid electrode of the D-type gallium nitride switch is coupled to the first end of the first control module, the second end of the first control module is coupled to the second end of the first capacitor, the second control module is coupled to the control end of the switch module, and the second end of the first capacitor and the third end of the switch module are grounded;
the second control module is used for outputting a control signal to control the on-off of the switch module so as to control the on-off of the D-type gallium nitride switch;
the first control module is used for adjusting the opening speed of the D-type gallium nitride switch.
Optionally, the first control module is further configured to adjust a turn-off speed of the D-type gallium nitride switch.
Optionally, the first control module includes an on speed control module and an off speed control module connected in parallel, where:
the opening speed control module is used for adjusting the opening speed of the D-type gallium nitride switch;
and the turn-off speed control module is used for adjusting the turn-off speed of the D-type gallium nitride switch.
Optionally, the opening speed control module includes a first resistor; wherein:
the grid electrode of the D-type gallium nitride switch is coupled to the first end of the first resistor, and the second end of the first resistor is also coupled to the second end of the first capacitor;
the first resistor is used for adjusting the opening speed of the D-type gallium nitride switch.
Optionally, the turn-off speed control module includes a first diode and a second resistor;
the first end of the second resistor is coupled to the grid electrode of the D-type gallium nitride switch, and the second end of the second resistor is coupled to the anode of the first diode; a cathode of the first diode is coupled to a second end of the first resistor;
the second resistor is used for adjusting the turn-off speed of the D-type gallium nitride switch.
Optionally, the circuit further comprises a clamping zener diode;
the anode of the clamping voltage stabilizing diode is coupled to the first end of the first resistor, and the cathode of the clamping voltage stabilizing diode is coupled to the source electrode of the D-type gallium nitride switch.
Optionally, the switch module is a first NMOS switch tube;
the drain electrode of the first NMOS switch tube is coupled to the source electrode of the D-type gallium nitride switch, the grid electrode of the first NMOS switch tube is coupled to the second control module, and the source electrode of the first NMOS switch tube is grounded.
Optionally, the device further comprises a sampling module, wherein the sampling module comprises a current detection resistor and a second NMOS switch tube;
the first end of the second control module is respectively coupled to the grid electrode of the second NMOS switch tube and the grid electrode of the first NMOS switch tube, the second end of the second control module is coupled to the drain electrode of the second NMOS switch tube, the third end of the second control module is coupled to the first end of the current detection resistor, the fourth end of the second control module is coupled to the drain electrode of the first NMOS switch tube, and the fifth end of the second control module is grounded; the second end of the current detection resistor and the source electrode of the second NMOS switch tube are respectively grounded;
the first end of the second control module is used for outputting the control signal to control the on and off of the first NMOS switching tube and the second NMOS switching tube, and the second end and the fourth end of the second control module are used for outputting the same voltage so that the second NMOS switching tube and the first NMOS switching tube form a current mirror; and the second control module is further configured to mirror the current flowing through the second NMOS switch tube to the current detection resistor, so that the current remaining on the current detection resistor is equal to the current flowing through the second NMOS switch tube.
Optionally, the width-to-length ratio of the first NMOS switch tube is greater than the width-to-length ratio of the second NMOS switch tube.
Optionally, the input end of the second control module receives an input signal; the second control module outputs a corresponding control signal according to the input signal, wherein:
if the input signal is high level, the control signal is an adaptive high level signal;
if the input signal is low level, the control signal is an adaptive low level signal.
Optionally, the device further comprises an output capacitor;
the first end of the output capacitor is coupled to the sixth end of the second control module, and the second end of the output capacitor is grounded.
Optionally, the system further comprises a high-voltage starting module; the high-voltage starting module comprises a second diode, a constant current source, an LDO module and an input capacitor;
the source electrode of the D-type gallium nitride switch is coupled to the anode of the second diode, the cathode of the second diode is coupled to the first end of the constant current source, the second end of the constant current source is coupled to the first end of the LDO module, the third end of the constant current source is coupled to the seventh end of the second control module, the second ends of the LDO module are respectively coupled to the eighth end of the second control module and the first end of the input capacitor, and the second end of the input capacitor is grounded; wherein,,
the seventh end of the second control module is used for controlling the opening and closing of the constant current source;
the input capacitor is used for supplying power to the second control module.
According to a second aspect of the present invention, there is provided a switching power supply circuit comprising the D-type gallium nitride switching drive circuit, the RCD snubber circuit, and the primary winding provided by any one of the first aspects of the present invention;
the first end of the primary winding is coupled to the first end of the RCD absorber circuit, and the second end of the primary winding is coupled to the second end of the RCD absorber circuit and the drain of the D-type gallium nitride switch, respectively.
Optionally, the RCD snubber circuit includes a second capacitor, a third resistor, and a third diode;
the first end of the primary winding is coupled to the first end of the second capacitor and the first end of the third resistor, respectively, the second end of the second capacitor is coupled to the second end of the third resistor, the second end of the third resistor is coupled to the cathode of the third diode, and the anode of the third diode is coupled to the second end of the primary winding.
Optionally, the power supply also comprises a power supply side capacitor; the first end of the primary winding is coupled to the first end of the power supply side capacitor, and the second end of the power supply side capacitor is grounded.
Optionally, a secondary winding is also included.
In the D-type gallium nitride switch driving circuit and the switching power supply circuit provided by the invention, the drain electrode of the D-type gallium nitride switch is connected with the first voltage, the source electrode of the D-type gallium nitride switch is respectively coupled to the first end of the switch module and the first end of the first capacitor, the grid electrode of the D-type gallium nitride switch is coupled to the first end of the first control module, the second end of the first control module is coupled to the second end of the first capacitor, and the second control module is coupled to the control end of the switch module, and the second end of the first capacitor and the third end of the switch module are grounded, so that the second control module outputs control signals to control the on and off of the switch module, further control the on and off of the D-type gallium nitride switch, the off speed of the D-type gallium nitride switch is not influenced, the efficiency is ensured, and meanwhile, the on speed of the D-type gallium nitride switch is regulated by the first control module, the voltage stress of a subsequent circuit is reduced, and the EMI characteristic is improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic diagram of a D-GaN switch driving circuit according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a D-GaN switch driving circuit according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a D-GaN switch driving circuit according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a switching power supply circuit configuration in another embodiment of the present invention;
FIG. 5 is a schematic waveform diagram of the switching power supply circuit shown in FIG. 4;
FIG. 6 is a schematic diagram of a prior art switching power supply circuit configuration;
FIG. 7 is a schematic waveform diagram of the switching power supply circuit shown in FIG. 6;
reference numerals illustrate:
10-a first control module;
20-a second control module;
101-an opening speed control module;
102-a shutdown speed control module;
vd-first voltage;
N-GAN-D type gallium nitride switch;
cgs—second parasitic capacitance;
main Fet-switch module;
a Sense Fet-second NMOS switching transistor;
d1-a first diode;
d2—a second diode;
d3-a third diode;
d4 fourth diode;
r1-a first resistor;
r2-a second resistor;
r3-a third resistor;
c1-a first capacitance;
c2-a second capacitance;
DZ 1-clamp zener diode;
cvcco-output capacitance;
cvcci-input capacitance;
istart-constant current source.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims and in the above drawings, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The technical scheme of the invention is described in detail below by specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
In view of the problems in the prior art, it is difficult to control the turn-on speed of the D-type gallium nitride switching transistor while ensuring the efficiency. The invention provides a D-type gallium nitride switch driving circuit and a switching power supply circuit, wherein the drain electrode of a D-type gallium nitride switch is connected with a first voltage, the source electrode of the D-type gallium nitride switch is respectively coupled to a first end of a switch module and a first end of a first capacitor, the grid electrode of the D-type gallium nitride switch is coupled to a first end of a first control module, a second end of the first control module is coupled to a second end of the first capacitor, and a second control module is coupled to a control end of the switch module, the second end of the first capacitor and a third end of the switch module are grounded, so that the second control module outputs a control signal to control the on and off of the switch module, the on and off of the D-type gallium nitride switch is controlled, meanwhile, the on speed of the D-type gallium nitride switch is independently regulated by the first control module, the voltage stress of a subsequent circuit can be reduced by the lower on speed, and the EMI characteristics are improved.
Referring to fig. 1, an embodiment of the present invention provides a D-type gallium nitride switch driving circuit, including: the device comprises a D-GAN switch, a first control module 10, a second control module 20, a first capacitor C1 and a switch module SW; wherein:
the drain electrode of the D-GAN switch D-GAN is connected to the first voltage Vd, the source electrode of the D-GAN switch D-GAN is respectively coupled to the first end of the switch module SW and the first end of the first capacitor C1, the gate electrode thereof is coupled to the first end of the first control module 10, the second end of the first control module 10 is coupled to the second end of the first capacitor C1, the second control module 20 is coupled to the control end of the switch module SW, and the second end of the first capacitor C1 and the third end of the switch module SW are grounded;
the second control module 20 is configured to output a control signal to control on and off of the switch module SW to control on and off of the D-GAN switch D-GAN, because the D-GAN switch D-GAN is a normally-on device, but in particular in an actual power application, the terminal device generally requires the device to be in a normally-off mode, so that when the control of the switch fails, the device can be ensured to be still in a turned-off state to ensure system security; as can be seen from the circuit structure shown in fig. 1, when the gate voltage of the D-GAN switch D-GAN is 0 and the gate-source voltage is less than the pinch-off threshold, the D-GAN switch operates in the forward blocking mode; when the switch module SW is turned on, the gate-source voltage of the D-type GaN switch D-GAN is zero, a 2DEG channel is already arranged between the drain and the source, and the D-type GaN switch D-GAN is turned on, so that the on-off of the switch module SW can be controlled by controlling the on-off of the D-type GaN switch D-GAN.
The first control module 10 is configured to adjust an opening speed of the D-GAN switch. If the D-GAN switch D-GAN is turned on too fast, the current flowing through the switch module SW will overshoot in a very short time, which is easy to damage the switch module SW, and may cause problems of EMI exceeding or even destructive oscillation. The invention can realize the adjustment of the opening speed of the D-type gallium nitride switch D-GAN through the first control module 10, thereby effectively protecting the switch module SW and solving the problem of EMI.
The first parasitic capacitance Cds exists between the drain and source electrodes of the D-GAN switch D-GAN, and the first capacitance C1 is used for forming a voltage division with the first parasitic capacitance Cds (not shown in the figure) so as to reduce the voltage of the first end of the switch module SW when the D-GAN switch D-GAN is turned off.
As a preferred embodiment, referring to fig. 1, the D-GAN switch D-GAN driving circuit further includes a clamp zener diode DZ1;
the anode of the clamping zener diode DZ1 is coupled to the first end of the first resistor, and the cathode of the clamping zener diode DZ1 is coupled to the source electrode of the D-GaN switch D-GAN.
For the GAN power tube, the faster turn-off speed may improve the circuit efficiency, in one embodiment, to balance the EMI characteristics and the circuit efficiency, the first control module 10 is further configured to adjust the turn-off speed of the D-GAN switch, please refer to fig. 2, where the first control module 10 includes an on speed control module 101 and an off speed control module 102 connected in parallel, and the on speed control module 102 is as follows:
the opening speed control module 101 is used for adjusting the opening speed of the D-GAN;
the turn-off speed control module 102 is configured to adjust a turn-off speed of the D-GAN switch D-GAN.
In one example, as shown in fig. 2, the turn-on speed control module 101 includes a first resistor R1; wherein:
the grid electrode of the D-gallium nitride switch D-GAN is coupled to the first end of the first resistor R1, and the second end of the first resistor R1 is also coupled to the second end of the first capacitor C1;
the first resistor R1 is used for adjusting the turn-on speed of the D-GAN switch D-GAN, specifically referring to fig. 2, because there is a second parasitic capacitance Cgs between the gate and the source of the D-GAN switch D-GAN, the voltage on the second parasitic capacitance Cgs (i.e., the gate-source voltage Vgs of the D-GAN switch D-GAN) is discharged through the first control module 10, in the example shown in fig. 2, the second parasitic capacitance Cgs and the first resistor R1 form a discharge circuit when the D-GAN switch D-GAN is turned on, increasing the resistance of the first resistor R1 can reduce the turn-on speed of the D-GAN switch D-GAN, and a lower turn-on speed can reduce the voltage stress of the subsequent circuit, improve the EMI, and improve the system reliability.
In this case, referring to fig. 2, in one example, the turn-off speed control module 102 includes a first diode D1 and a second resistor R2;
the first end of the second resistor R2 is coupled to the grid electrode of the D-type gallium nitride switch D-GAN, and the second end of the second resistor R2 is coupled to the anode of the first diode D1; the cathode of the first diode D1 is coupled to the second end of the first resistor R1;
the second resistor R2 is configured to adjust the turn-off speed of the D-GAN switch D-GAN, specifically, when the switch module SW is turned off, the source voltage of the D-GAN starts to rise, the voltage on the second parasitic capacitor Cgs starts to charge through the first control module 10, and when the gate-source voltage of the D-GAN is lower than the threshold of the pinch-off voltage, the D-GAN starts to turn off, in the example shown in fig. 2, the second parasitic capacitor Cgs, the second resistor R2 and the first diode D1 form a charging circuit when turned off, and by reducing the resistance of the second resistor R2, the turn-off speed of the D-GAN switch D-GAN can be accelerated, thereby improving the system efficiency. Wherein, the resistance value of the second resistor R2 is far smaller than the resistance value of R1.
As a preferred embodiment, the resistance value of the second resistor R2 is set to 0, so that the turn-off speed of the D-GAN switch D-GAN is the fastest.
For example, the switch module SW may be a MOS switch tube, and the second control module 20 is connected to the gate of the MOS tube and sends a control signal to control the on/off of the MOS tube. Of course, the invention is not limited thereto, and in other examples, the switching module SW may also select a transistor or other normally-closed switching device.
In one embodiment, referring to fig. 3, the switch module SW is a first NMOS switch transistor Main Fet;
the drain electrode of the first NMOS switch transistor Main is coupled to the source electrode of the D-GaN switch D-GAN, the grid electrode of the first NMOS switch transistor Main is coupled to the second control module 20, and the source electrode of the first NMOS switch transistor Main is grounded.
For sampling the current flowing through the D-GAN switch, in one embodiment, referring to fig. 3, the D-GAN switch D-GAN driving circuit further includes a sampling module 30, where the sampling module 30 includes a current detection resistor Rsense and a second NMOS switching transistor Sense Fet;
the first end of the second control module 20 is coupled to the gate of the second NMOS switching tube Sense Fet and the gate of the first NMOS switching tube Main Fet respectively, the second end thereof is coupled to the drain of the second NMOS switching tube Sense Fet, the third end thereof is coupled to the first end of the current detection resistor Rsense, the fourth end thereof is coupled to the drain of the first NMOS switching tube Main Fet, and the fifth end thereof is grounded; the second end of the current detection resistor Rsense and the source electrode of the second NMOS switching tube Sense Fet are respectively grounded;
the first end of the second control module 20 is configured to output the control signal, control the on and off of the first NMOS switching tube Main Fet and the second NMOS switching tube Sense Fet, and the second end and the fourth end thereof are configured to output the same voltage, so that the second NMOS switching tube Sense Fet and the first NMOS switching tube Main Fet form a current mirror; and the second control module 20 is further configured to mirror the current flowing through the second NMOS switching transistor Sense Fet to the current detection resistor Rsense, so that the current remaining on the current detection resistor Rsense is equal to the current flowing through the second NMOS switching transistor Sense Fet.
As a preferred embodiment, the width-to-length ratio of the first NMOS switching transistor Main Fet is greater than the width-to-length ratio of the second NMOS switching transistor Sense Fet.
Because the current flowing through the first NMOS switch tube Main Fet is almost equal to the current flowing through the D-type gallium nitride switch D-GAN, the current flowing through the D-type gallium nitride switch D-GAN can be obtained by sampling the current of the first NMOS switch tube Main Fet. Because the Vgs voltage and Vds voltage of the first NMOS switch tube Main Fet are equal to the Vgs voltage and Vds voltage of the second NMOS switch tube Sense Fet respectively, the Ids current ratios of the first NMOS switch tube Main Fet and the second NMOS switch tube Sense Fet will be in a proportional relationship with the width-to-length ratio thereof, so that the current flowing in the first NMOS switch tube Main Fet can be known by sampling the current flowing in the second NMOS switch tube Sense Fet, thereby obtaining the current of the D-GAN switch D-GAN, and because the second control module 20 mirrors the current flowing in the second NMOS switch tube Sense Fet to the current detection resistor Rsense, the current remaining in the current detection resistor Rsense is equal to the current flowing in the second NMOS switch tube Sense Fet; after the circuit design is fixed, the resistance value of the current detection resistor Rsense is known, so that the current flowing in the second NMOS switching tube Sense Fet can be obtained by measuring the voltage at two ends of the current detection resistor Rsense, and the current of the first NMOS switching tube Main Fet can be obtained.
Given a flow through the first NMCurrent I of OS switching tube Main Fet 1 A current I flowing through the second NMOS switch transistor Sense Fet 2 The resistance value of the current detection resistor Rsense, the voltage Vcs at two ends of the current detection resistor Rsense has the following relationship:
Vcs＝I 2 ·Rsense＝K·I 1 ·Rsense
the width-to-length ratio of the second NMOS switch transistor Sense Fet to the first NMOS switch transistor Main Fet is generally K, which is a few thousandths, so that the loss on the current detection resistor Rsense is low.
As a further preferred embodiment, the first NMOS switching transistor Main Fet and the second NMOS switching transistor Sense Fet are integrated on the same substrate, and the process of the MOS switching transistors is the same. In this case, to facilitate measurement of the voltage of the current sense resistor Rsense, the current sense resistor Rsense is an off-chip resistor.
As a preferred embodiment, the second control module 20 performs level processing of the corresponding signal according to an external signal, so that the level of the control signal output by the second control module 20 is adapted to the level that can be received by a subsequent circuit, please refer to fig. 3, and the input end of the second control module 20 receives the input signal PWM; the second control module 20 outputs a corresponding control signal according to the input signal PWM, wherein:
if the input signal PWM is high level, the control signal is an adaptive high level signal;
if the input signal PWM is low level, the control signal is an adapted low level signal.
In this case, in one embodiment, the D-GAN switch D-GAN driving circuit further includes an output capacitor Cvcco;
a first terminal of the output capacitor Cvcco is coupled to the sixth terminal of the second control module 20, and a second terminal of the output capacitor Cvcco is grounded.
As a preferred embodiment, the D-GAN driving circuit further includes a high voltage start module; the high-voltage starting module comprises a second diode D2, a constant current source Istart, an LDO module and an input capacitor Cvcci;
the source of the D-GAN switch D-GAN is coupled to the anode of the second diode D2, the cathode of the second diode D2 is coupled to the first end of the constant current source Istart, the second end of the constant current source Istart is coupled to the first end of the LDO module, the third end of the constant current source Istart is coupled to the seventh end of the second control module 20, and the second end of the LDO module is respectively coupled to the eighth end of the second control module 20 and the first end of the input capacitor Cvcci, and the second end of the input capacitor Cvcci is grounded; wherein,,
the seventh end of the second control module 20 is configured to control the constant current source Istart to be turned on or off;
the input capacitance Cvcci is used to power the second control module 20.
When the circuit is started, the first NMOS switch tube Main Fet is in an off state, the gate voltage of the D-GAN switch D-GAN is zero, the source voltage of the D-GAN switch D-GAN is increased gradually, when the Vgs voltage of the D-GAN switch D-GAN is the pinch-off voltage Vth thereof, the D-GAN switch D-GAN is turned off, at this time, the gate voltage of the D-GAN switch D-GAN is 0, the source voltage thereof is Vth, at this time, the constant current source Istart takes power from the source of the D-GAN, the LDO module charges the input capacitor Cvcci, and when the voltage of the input capacitor Cvcci is the starting voltage of the second control module 20, the second control module 20 enters a working state, and outputs a corresponding turn-off control signal to turn off the Istart, thereby completing self-power-taking start. The voltage on the input capacitor Cvcci may also be a voltage source for other peripheral circuits.
In addition, the embodiment of the invention also provides a switching power supply circuit, please refer to fig. 4, which includes the above-mentioned D-type gallium nitride switch driving circuit, the RCD snubber circuit 40 and the primary winding Np;
the first terminal of the primary winding Np is coupled to the first terminal of the RCD snubber circuit 40, and the second terminal thereof is coupled to the second terminal of the RCD snubber circuit 40 and the drain of the D-GAN switch D-GAN, respectively.
In one example, referring to fig. 4, the RCD snubber circuit 40 includes a second capacitor C2, a third resistor R3, and a third diode D3;
the first end of the primary winding Np is coupled to the first end of the second capacitor C2 and the first end of the third resistor R3, respectively, the second end of the second capacitor C2 is coupled to the second end of the third resistor R3, the second end of the third resistor R3 is coupled to the cathode of the third diode D3, and the anode of the third diode D3 is coupled to the second end of the primary winding Np.
As an embodiment, referring to fig. 4, the switching power supply circuit further includes a secondary winding Ns.
As a preferred embodiment, referring to fig. 4, the switching power supply circuit further includes a power supply side capacitor Cin; the first end of the primary winding Np is coupled to the first end of the power supply side capacitor Cin, and the second end of the power supply side capacitor Cin is grounded.
Referring to fig. 4, the secondary winding Ns of the switching power supply circuit further includes, for example, a rectifying diode D4, a third capacitor C3, and a fourth resistor R4.
The circuit configuration of the primary winding Np side and the secondary winding Ns side is the same as that of the conventional circuit, and will not be described herein.
The operation effects of the D-type gallium nitride switch driving circuit of the present invention and the conventional D-type gallium nitride switch driving circuit in the switching power supply circuit are now compared with the waveforms shown in fig. 5 and 7, wherein the waveform shown in fig. 5 is the operation effect of the switching power supply circuit shown in fig. 4, and the waveform shown in fig. 7 is the operation effect of the conventional D-type gallium nitride switch driving circuit shown in fig. 6, and specifically described as follows:
PWM, which may be understood as a control signal of the output of the second control module 20;
Vd-GAN, which can be understood as the drain voltage of the D-GAN switch D-GAN;
vd-mos, which can be understood as the drain voltage of the first NMOS switching tube Main Fet;
ids, which can be understood as the current flowing through the first NMOS switching transistor Main Fet;
vcs, which can be understood as the voltage at the first end of the current sense resistor Rsense;
vd2, which can be understood as the voltage of the secondary winding Ns-side rectifying diode D4;
the current flowing through the first NMOS switching transistor Main Fet is similar to the voltage at the first end of the current detection resistor Rsense in waveform, and is illustrated as the same waveform in fig. 5 and 7.
Referring to fig. 6, in the conventional D-type gan switch driving circuit, the switching speed of the D-type gan switch can be further adjusted by adjusting the resistance of the resistor Rg and/or the capacitance of the capacitor C1 connected between the gate and the source of the D-type gan switch, but the effect of this method on the switching speed of the D-type gan switch is limited, but the effect on the switching speed of the D-type gan switch is greater, and the effect on the efficiency is greater. Referring to fig. 7, the drain voltage waveform of the first NMOS switch tube Main Fet, the current waveform flowing through the first NMOS switch tube Main Fet, the voltage waveform of the current detection resistor Rsense, and the voltage waveform of the secondary winding Ns-side rectifying diode D4 are shown in the specification, and at the moment when the D-GAN switch D-GAN is turned on, the drain voltage of the D-GAN switch D-GAN is reduced, but the current stress received by the first NMOS switch tube Main Fet, the voltage stress received by the current detection resistor Rsense, and the voltage stress received by the secondary winding Ns-side rectifying diode D4 are higher, and a higher voltage spike is detected at the secondary winding Ns-side rectifying diode D4, and the current and the voltage overshoot all cause an overdriving, which affects the safety and reliability of the system;
in the D-type gallium nitride switch driving circuit provided by the invention, the first resistor R1 can reduce the on speed of the D-type gallium nitride switch D-GAN, and meanwhile, the off speed of the D-type gallium nitride switch D-GAN is not influenced, so that the efficiency is ensured. Referring to fig. 5, the drain voltage waveform of the first NMOS switch tube Main Fet, the current waveform flowing through the first NMOS switch tube Main Fet, the voltage waveform of the current detection resistor Rsense, and the voltage waveform of the secondary winding Ns-side rectifying diode D4 are shown, and at the moment when the D-GAN switch D-GAN is turned on, the drain voltage of the D-GAN switch D and the drain voltage of the first NMOS switch tube Main Fet are reduced, the current stress received by the first NMOS switch tube Main Fet, the voltage stress received by the current detection resistor Rsense, and the voltage stress received by the secondary winding Ns-side rectifying diode D4 are lower, and the lower voltage spike can be detected at the secondary winding Ns-side rectifying diode D4, which effectively prevents the current and the voltage from overshooting, and improves the safety and reliability of the system.
In summary, in the D-type gan switch driving circuit and the switching power supply circuit provided by the invention, the drain electrode of the D-type gan switch is connected to the first voltage, the source electrode of the D-type gan switch is respectively coupled to the first end of the switching module and the first end of the first capacitor, the gate electrode of the D-type gan switch is coupled to the first end of the first control module, the second end of the first control module is coupled to the second end of the first capacitor, and the second control module is coupled to the control end of the switching module, the second end of the first capacitor and the third end of the switching module are grounded, so that the second control module outputs a control signal to control the on and off of the switching module, thereby controlling the on and off of the D-type gan switch, and simultaneously, the on speed of the D-type gan switch is independently adjusted by the first control module, so that the lower on speed can reduce the voltage stress of the subsequent circuit and improve the EMI characteristics.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (16)

1. A D-type gallium nitride switch driving circuit, comprising: the device comprises a D-type gallium nitride switch, a first control module, a second control module, a first capacitor and a switch module; wherein:
the drain electrode of the D-type gallium nitride switch is connected with a first voltage, the source electrode of the D-type gallium nitride switch is respectively coupled to the first end of the switch module and the first end of the first capacitor, the grid electrode of the D-type gallium nitride switch is coupled to the first end of the first control module, the second end of the first control module is coupled to the second end of the first capacitor, the second control module is coupled to the control end of the switch module, and the second end of the first capacitor and the third end of the switch module are grounded;
the second control module is used for outputting a control signal to control the on-off of the switch module so as to control the on-off of the D-type gallium nitride switch;
the first control module is used for adjusting the opening speed of the D-type gallium nitride switch.
2. The D-type gallium nitride switch driving circuit according to claim 1, wherein the first control module is further configured to adjust an off-speed of the D-type gallium nitride switch.
3. The D-type gallium nitride switch driving circuit according to claim 2, wherein the first control module comprises an on-speed control module and an off-speed control module connected in parallel, wherein:
the opening speed control module is used for adjusting the opening speed of the D-type gallium nitride switch;
and the turn-off speed control module is used for adjusting the turn-off speed of the D-type gallium nitride switch.
4. A D-type gallium nitride switch driver circuit according to claim 3, wherein the turn-on speed control module includes a first resistor; wherein:
the grid electrode of the D-type gallium nitride switch is coupled to the first end of the first resistor, and the second end of the first resistor is also coupled to the second end of the first capacitor;
the first resistor is used for adjusting the opening speed of the D-type gallium nitride switch.
5. The D-type gallium nitride switch driving circuit according to claim 4, wherein the turn-off speed control module comprises a first diode and a second resistor;
the first end of the second resistor is coupled to the grid electrode of the D-type gallium nitride switch, and the second end of the second resistor is coupled to the anode of the first diode; a cathode of the first diode is coupled to a second end of the first resistor;
the second resistor is used for adjusting the turn-off speed of the D-type gallium nitride switch.
6. The D-type gallium nitride switch driver circuit according to claim 4, further comprising a clamp zener diode;
the anode of the clamping voltage stabilizing diode is coupled to the first end of the first resistor, and the cathode of the clamping voltage stabilizing diode is coupled to the source electrode of the D-type gallium nitride switch.
7. The D-type gallium nitride switch driving circuit according to claim 1, wherein the switch module is a first NMOS switch tube;
the drain electrode of the first NMOS switch tube is coupled to the source electrode of the D-type gallium nitride switch, the grid electrode of the first NMOS switch tube is coupled to the second control module, and the source electrode of the first NMOS switch tube is grounded.
8. The D-type gallium nitride switch driving circuit according to claim 7, further comprising a sampling module including a current detection resistor and a second NMOS switch tube;
the first end of the second control module is respectively coupled to the grid electrode of the second NMOS switch tube and the grid electrode of the first NMOS switch tube, the second end of the second control module is coupled to the drain electrode of the second NMOS switch tube, the third end of the second control module is coupled to the first end of the current detection resistor, the fourth end of the second control module is coupled to the drain electrode of the first NMOS switch tube, and the fifth end of the second control module is grounded; the second end of the current detection resistor and the source electrode of the second NMOS switch tube are respectively grounded;
the first end of the second control module is used for outputting the control signal to control the on and off of the first NMOS switching tube and the second NMOS switching tube, and the second end and the fourth end of the second control module are used for outputting the same voltage so that the second NMOS switching tube and the first NMOS switching tube form a current mirror; and the second control module is further configured to mirror the current flowing through the second NMOS switch tube to the current detection resistor, so that the current remaining on the current detection resistor is equal to the current flowing through the second NMOS switch tube.
9. The D-type gallium nitride switch driving circuit according to claim 8, wherein the aspect ratio of the first NMOS switch transistor is greater than the aspect ratio of the second NMOS switch transistor.
10. The D-type gallium nitride switch driver circuit according to claim 8, wherein the input of the second control module receives an input signal; the second control module outputs a corresponding control signal according to the input signal, wherein:
if the input signal is high level, the control signal is an adaptive high level signal;
if the input signal is low level, the control signal is an adaptive low level signal.
11. The D-type gallium nitride switch driver circuit according to claim 8, further comprising an output capacitor;
the first end of the output capacitor is coupled to the sixth end of the second control module, and the second end of the output capacitor is grounded.
12. The D-type gallium nitride switch driver circuit of claim 8, further comprising a high voltage start-up module; the high-voltage starting module comprises a second diode, a constant current source, an LDO module and an input capacitor;
the source electrode of the D-type gallium nitride switch is coupled to the anode of the second diode, the cathode of the second diode is coupled to the first end of the constant current source, the second end of the constant current source is coupled to the first end of the LDO module, the third end of the constant current source is coupled to the seventh end of the second control module, the second ends of the LDO module are respectively coupled to the eighth end of the second control module and the first end of the input capacitor, and the second end of the input capacitor is grounded; wherein,,
the seventh end of the second control module is used for controlling the opening and closing of the constant current source;
the input capacitor is used for supplying power to the second control module.
13. A switching power supply circuit comprising the D-type gallium nitride switching drive circuit of any one of claims 1 to 12, an RCD snubber circuit, and a primary winding;
the first end of the primary winding is coupled to the first end of the RCD absorber circuit, and the second end of the primary winding is coupled to the second end of the RCD absorber circuit and the drain of the D-type gallium nitride switch, respectively.
14. The switching power supply circuit of claim 13 wherein said RCD sink circuit comprises a second capacitor, a third resistor, and a third diode;
the first end of the primary winding is coupled to the first end of the second capacitor and the first end of the third resistor, respectively, the second end of the second capacitor is coupled to the second end of the third resistor, the second end of the third resistor is coupled to the cathode of the third diode, and the anode of the third diode is coupled to the second end of the primary winding.
15. The switching power supply circuit according to claim 13, further comprising a power supply side capacitor; the first end of the primary winding is coupled to the first end of the power supply side capacitor, and the second end of the power supply side capacitor is grounded.
16. The switching power supply circuit of claim 13 further comprising a secondary winding.
CN202310160546.2A 2023-02-24 2023-02-24 D-type gallium nitride switch driving circuit and switching power supply circuit Pending CN116094292A (en)

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CN202310160546.2A CN116094292A (en) 2023-02-24 2023-02-24 D-type gallium nitride switch driving circuit and switching power supply circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310160546.2A CN116094292A (en) 2023-02-24 2023-02-24 D-type gallium nitride switch driving circuit and switching power supply circuit

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CN116094292A true CN116094292A (en) 2023-05-09

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